---
_id: '34056'
abstract:
- lang: eng
  text: '<jats:p> A process sequence enabling the large-area fabrication of nanopillar-patterned
    semiconductor templates for selective-area heteroepitaxy is developed. Herein,
    the nanopillar tops surrounded by a SiN<jats:sub>x</jats:sub> mask film serve
    as nanoscale growth areas. The molecular beam epitaxial growth of InAs on such
    patterned GaAs[Formula: see text]A templates is investigated by means of electron
    microscopy. It is found that defect-free nanoscale InAs islands grow selectively
    on the nanopillar tops at a substrate temperature of 425 °C. High-angle annular
    dark-field scanning transmission electron microscopy imaging reveals that for
    a growth temperature of 400 °C, the InAs islands show a tendency to form wurtzite
    phase arms extending along the lateral [Formula: see text] directions from the
    central zinc blende region of the islands. This is ascribed to a temporary self-catalyzed
    vapor–liquid–solid growth on [Formula: see text] B facets, which leads to a kinetically
    induced preference for the nucleation of the wurtzite phase driven by the local,
    instantaneous V/III ratio, and to a concomitant reduction of surface energy of
    the nanoscale diameter arms. </jats:p>'
article_number: '185701'
author:
- first_name: Thomas
  full_name: Riedl, Thomas
  id: '36950'
  last_name: Riedl
- first_name: Vinay S.
  full_name: Kunnathully, Vinay S.
  last_name: Kunnathully
- first_name: Akshay Kumar
  full_name: Verma, Akshay Kumar
  id: '72998'
  last_name: Verma
- first_name: Timo
  full_name: Langer, Timo
  last_name: Langer
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Björn
  full_name: Büker, Björn
  last_name: Büker
- first_name: Andreas
  full_name: Hütten, Andreas
  last_name: Hütten
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
citation:
  ama: Riedl T, Kunnathully VS, Verma AK, et al. Selective area heteroepitaxy of InAs
    nanostructures on nanopillar-patterned GaAs(111)A. <i>Journal of Applied Physics</i>.
    2022;132(18). doi:<a href="https://doi.org/10.1063/5.0121559">10.1063/5.0121559</a>
  apa: Riedl, T., Kunnathully, V. S., Verma, A. K., Langer, T., Reuter, D., Büker,
    B., Hütten, A., &#38; Lindner, J. (2022). Selective area heteroepitaxy of InAs
    nanostructures on nanopillar-patterned GaAs(111)A. <i>Journal of Applied Physics</i>,
    <i>132</i>(18), Article 185701. <a href="https://doi.org/10.1063/5.0121559">https://doi.org/10.1063/5.0121559</a>
  bibtex: '@article{Riedl_Kunnathully_Verma_Langer_Reuter_Büker_Hütten_Lindner_2022,
    title={Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned
    GaAs(111)A}, volume={132}, DOI={<a href="https://doi.org/10.1063/5.0121559">10.1063/5.0121559</a>},
    number={18185701}, journal={Journal of Applied Physics}, publisher={AIP Publishing},
    author={Riedl, Thomas and Kunnathully, Vinay S. and Verma, Akshay Kumar and Langer,
    Timo and Reuter, Dirk and Büker, Björn and Hütten, Andreas and Lindner, Jörg},
    year={2022} }'
  chicago: Riedl, Thomas, Vinay S. Kunnathully, Akshay Kumar Verma, Timo Langer, Dirk
    Reuter, Björn Büker, Andreas Hütten, and Jörg Lindner. “Selective Area Heteroepitaxy
    of InAs Nanostructures on Nanopillar-Patterned GaAs(111)A.” <i>Journal of Applied
    Physics</i> 132, no. 18 (2022). <a href="https://doi.org/10.1063/5.0121559">https://doi.org/10.1063/5.0121559</a>.
  ieee: 'T. Riedl <i>et al.</i>, “Selective area heteroepitaxy of InAs nanostructures
    on nanopillar-patterned GaAs(111)A,” <i>Journal of Applied Physics</i>, vol. 132,
    no. 18, Art. no. 185701, 2022, doi: <a href="https://doi.org/10.1063/5.0121559">10.1063/5.0121559</a>.'
  mla: Riedl, Thomas, et al. “Selective Area Heteroepitaxy of InAs Nanostructures
    on Nanopillar-Patterned GaAs(111)A.” <i>Journal of Applied Physics</i>, vol. 132,
    no. 18, 185701, AIP Publishing, 2022, doi:<a href="https://doi.org/10.1063/5.0121559">10.1063/5.0121559</a>.
  short: T. Riedl, V.S. Kunnathully, A.K. Verma, T. Langer, D. Reuter, B. Büker, A.
    Hütten, J. Lindner, Journal of Applied Physics 132 (2022).
date_created: 2022-11-10T14:19:21Z
date_updated: 2023-01-10T12:08:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0121559
intvolume: '       132'
issue: '18'
keyword:
- General Physics and Astronomy
language:
- iso: eng
publication: Journal of Applied Physics
publication_identifier:
  issn:
  - 0021-8979
  - 1089-7550
publication_status: published
publisher: AIP Publishing
status: public
title: Selective area heteroepitaxy of InAs nanostructures on nanopillar-patterned
  GaAs(111)A
type: journal_article
user_id: '77496'
volume: 132
year: '2022'
...