---
_id: '9740'
abstract:
- lang: eng
text: Die Integration von Selbstoptimierung in mechatronische Systeme beinhaltet
sowohl Risiken als auch Potenziale für die Verlässlichkeit. Die Risiken entstehen
durch die Selbstoptimierung in den komplexen Systemen, da das Systemverhalten
nur begrenzt im Voraus vorhersehbar ist. Daher wurde innerhalb des Sonderforschungsbereichs
614 ''Selbstoptimierende Systeme des Maschinenbaus" ein mehrstufiges Verlässlichkeitskonzept
entworfen, welches das Ziel Verlässlichkeit stärker im Zielsystem verankert. In
diesem Beitrag wird zum einen das erarbeitete Verlässlichkeitskonzept und zum
anderen die Anwendung dieses Konzepts innerhalb des aktiven Spurführungsmoduls
eines schienengebundenen Fahrzeugs vorgestellt. Um Programmierfehler auszuschließen
wurde das Verlässlichkeitskonzept modelliert und über Model Checking verifiziert.
Anhand von Simulationsergebnissen wird gezeigt, wie durch das mehrstufige Verlässlichkeitskonzept
auf einen Ausfall eines Wirbelstromsensors des aktiven Spurführungsmoduls reagiert
werden kann.
author:
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Jens
full_name: Geisler, Jens
last_name: Geisler
- first_name: Martin
full_name: Hirsch, Martin
last_name: Hirsch
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
citation:
ama: 'Sondermann-Wölke C, Geisler J, Hirsch M, Hemsel T. Verlässlichkeit im aktiven
selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs. In:
Gausemeier J, Rammig FJ, Trächtler A, eds. Entwurf Mechatronischer Systeme.
Vol 250. HNI-Verlagsschriftenreihe. Paderborn; 2009:231-242.'
apa: Sondermann-Wölke, C., Geisler, J., Hirsch, M., & Hemsel, T. (2009). Verlässlichkeit
im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs.
In J. Gausemeier, F. J. Rammig, & A. Trächtler (Eds.), Entwurf mechatronischer
Systeme (Vol. 250, pp. 231–242). Paderborn.
bibtex: '@inproceedings{Sondermann-Wölke_Geisler_Hirsch_Hemsel_2009, place={Paderborn},
series={HNI-Verlagsschriftenreihe}, title={Verlässlichkeit im aktiven selbstoptimierenden
Spurführungsmodul eines schienengebundenen Fahrzeugs}, volume={250}, booktitle={Entwurf
mechatronischer Systeme}, author={Sondermann-Wölke, Christoph and Geisler, Jens
and Hirsch, Martin and Hemsel, Tobias}, editor={Gausemeier, Jürgen and Rammig,
Franz Josef and Trächtler, AnsgerEditors}, year={2009}, pages={231–242}, collection={HNI-Verlagsschriftenreihe}
}'
chicago: Sondermann-Wölke, Christoph, Jens Geisler, Martin Hirsch, and Tobias Hemsel.
“Verlässlichkeit Im Aktiven Selbstoptimierenden Spurführungsmodul Eines Schienengebundenen
Fahrzeugs.” In Entwurf Mechatronischer Systeme, edited by Jürgen Gausemeier,
Franz Josef Rammig, and Ansger Trächtler, 250:231–42. HNI-Verlagsschriftenreihe.
Paderborn, 2009.
ieee: C. Sondermann-Wölke, J. Geisler, M. Hirsch, and T. Hemsel, “Verlässlichkeit
im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs,”
in Entwurf mechatronischer Systeme, 2009, vol. 250, pp. 231–242.
mla: Sondermann-Wölke, Christoph, et al. “Verlässlichkeit Im Aktiven Selbstoptimierenden
Spurführungsmodul Eines Schienengebundenen Fahrzeugs.” Entwurf Mechatronischer
Systeme, edited by Jürgen Gausemeier et al., vol. 250, 2009, pp. 231–42.
short: 'C. Sondermann-Wölke, J. Geisler, M. Hirsch, T. Hemsel, in: J. Gausemeier,
F.J. Rammig, A. Trächtler (Eds.), Entwurf Mechatronischer Systeme, Paderborn,
2009, pp. 231–242.'
date_created: 2019-05-13T09:17:07Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
editor:
- first_name: Jürgen
full_name: Gausemeier, Jürgen
last_name: Gausemeier
- first_name: Franz Josef
full_name: Rammig, Franz Josef
last_name: Rammig
- first_name: Ansger
full_name: Trächtler, Ansger
last_name: Trächtler
intvolume: ' 250'
keyword:
- Verlässigkeit
language:
- iso: eng
page: 231 - 242
place: Paderborn
publication: Entwurf mechatronischer Systeme
series_title: HNI-Verlagsschriftenreihe
status: public
title: Verlässlichkeit im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen
Fahrzeugs
type: conference
user_id: '55222'
volume: 250
year: '2009'
...
---
_id: '9741'
author:
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Tobias
full_name: Hesse, Tobias
last_name: Hesse
- first_name: Thomas
full_name: Sattel, Thomas
last_name: Sattel
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
citation:
ama: 'Sondermann-Wölke C, Hesse T, Sattel T, Hemsel T. Menschliche Unzuverlässigkeit
als Grundlage für den Entwurf von Kollisionsvermeidungssystemen. In: 24. Tagung
Technische Zuverlässigkeit (TTZ 2009) - Entwicklung Und Betrieb Zuverlässiger
Produkte, Leonberg. Vol 2065. VDI-Berichte. Düsseldorf; 2009:335-340.'
apa: Sondermann-Wölke, C., Hesse, T., Sattel, T., & Hemsel, T. (2009). Menschliche
Unzuverlässigkeit als Grundlage für den Entwurf von Kollisionsvermeidungssystemen.
In 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb
zuverlässiger Produkte, Leonberg (Vol. 2065, pp. 335–340). Düsseldorf.
bibtex: '@inproceedings{Sondermann-Wölke_Hesse_Sattel_Hemsel_2009, place={Düsseldorf},
series={VDI-Berichte}, title={Menschliche Unzuverlässigkeit als Grundlage für
den Entwurf von Kollisionsvermeidungssystemen.}, volume={2065}, booktitle={24.
Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb zuverlässiger
Produkte, Leonberg}, author={Sondermann-Wölke, Christoph and Hesse, Tobias and
Sattel, Thomas and Hemsel, Tobias}, year={2009}, pages={335–340}, collection={VDI-Berichte}
}'
chicago: Sondermann-Wölke, Christoph, Tobias Hesse, Thomas Sattel, and Tobias Hemsel.
“Menschliche Unzuverlässigkeit Als Grundlage Für Den Entwurf von Kollisionsvermeidungssystemen.”
In 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung Und Betrieb
Zuverlässiger Produkte, Leonberg, 2065:335–40. VDI-Berichte. Düsseldorf, 2009.
ieee: C. Sondermann-Wölke, T. Hesse, T. Sattel, and T. Hemsel, “Menschliche Unzuverlässigkeit
als Grundlage für den Entwurf von Kollisionsvermeidungssystemen.,” in 24. Tagung
Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb zuverlässiger
Produkte, Leonberg, 2009, vol. 2065, pp. 335–340.
mla: Sondermann-Wölke, Christoph, et al. “Menschliche Unzuverlässigkeit Als Grundlage
Für Den Entwurf von Kollisionsvermeidungssystemen.” 24. Tagung Technische Zuverlässigkeit
(TTZ 2009) - Entwicklung Und Betrieb Zuverlässiger Produkte, Leonberg, vol.
2065, 2009, pp. 335–40.
short: 'C. Sondermann-Wölke, T. Hesse, T. Sattel, T. Hemsel, in: 24. Tagung Technische
Zuverlässigkeit (TTZ 2009) - Entwicklung Und Betrieb Zuverlässiger Produkte, Leonberg,
Düsseldorf, 2009, pp. 335–340.'
date_created: 2019-05-13T09:27:29Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
intvolume: ' 2065'
language:
- iso: eng
page: 335 - 340
place: Düsseldorf
publication: 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb
zuverlässiger Produkte, Leonberg
series_title: VDI-Berichte
status: public
title: Menschliche Unzuverlässigkeit als Grundlage für den Entwurf von Kollisionsvermeidungssystemen.
type: conference
user_id: '55222'
volume: 2065
year: '2009'
...
---
_id: '9742'
abstract:
- lang: eng
text: New mechatronic systems, called self-optimizing systems, are able to adapt
their behavior according to environmental, user and system specific influences.
Self-optimizing systems are complex and due to their non-deterministic behavior
comprise hidden risks, which cannot be foreseen in the design phase of the system.
Therefore, this paper presents modifications of the current condition monitoring
policy, to be able to cope with this new kind of systems. Beside avoiding critical
situations evoked by self-optimization, the proposed concept uses self-optimization
to increase the dependability of the system. In this case, the concept is applied
to the active guidance module of an innovative rail-bound vehicle.
author:
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Walter
full_name: Sextro, Walter
id: '21220'
last_name: Sextro
citation:
ama: 'Sondermann-Wölke C, Sextro W. Towards the Integration of Condition Monitoring
in Self-Optimizing Function Modules. In: Future Computing, Service Computation,
Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation
World: ; 2009:15-20. doi:10.1109/ComputationWorld.2009.47'
apa: Sondermann-Wölke, C., & Sextro, W. (2009). Towards the Integration of Condition
Monitoring in Self-Optimizing Function Modules. In Future Computing, Service
Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09.
Computation World: (pp. 15–20). https://doi.org/10.1109/ComputationWorld.2009.47
bibtex: '@inproceedings{Sondermann-Wölke_Sextro_2009, title={Towards the Integration
of Condition Monitoring in Self-Optimizing Function Modules}, DOI={10.1109/ComputationWorld.2009.47},
booktitle={Future Computing, Service Computation, Cognitive, Adaptive, Content,
Patterns, 2009. COMPUTATIONWORLD ’09. Computation World:}, author={Sondermann-Wölke,
Christoph and Sextro, Walter}, year={2009}, pages={15–20} }'
chicago: Sondermann-Wölke, Christoph, and Walter Sextro. “Towards the Integration
of Condition Monitoring in Self-Optimizing Function Modules.” In Future Computing,
Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD
’09. Computation World:, 15–20, 2009. https://doi.org/10.1109/ComputationWorld.2009.47.
ieee: C. Sondermann-Wölke and W. Sextro, “Towards the Integration of Condition Monitoring
in Self-Optimizing Function Modules,” in Future Computing, Service Computation,
Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation
World:, 2009, pp. 15–20.
mla: Sondermann-Wölke, Christoph, and Walter Sextro. “Towards the Integration of
Condition Monitoring in Self-Optimizing Function Modules.” Future Computing,
Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD
’09. Computation World:, 2009, pp. 15–20, doi:10.1109/ComputationWorld.2009.47.
short: 'C. Sondermann-Wölke, W. Sextro, in: Future Computing, Service Computation,
Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation
World:, 2009, pp. 15–20.'
date_created: 2019-05-13T09:31:52Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
doi: 10.1109/ComputationWorld.2009.47
keyword:
- condition monitoring
- mechatronic systems
- rail bound vehicle
- rail guidance module
- self-optimization
- self-optimizing function modules
- condition monitoring
- mechatronics
- railway rolling stock
- self-adjusting systems
language:
- iso: eng
page: 15 -20
publication: 'Future Computing, Service Computation, Cognitive, Adaptive, Content,
Patterns, 2009. COMPUTATIONWORLD ''09. Computation World:'
status: public
title: Towards the Integration of Condition Monitoring in Self-Optimizing Function
Modules
type: conference
user_id: '55222'
year: '2009'
...
---
_id: '4152'
abstract:
- lang: eng
text: A novel technique to form periodically nanostructured Si surface morphologies
based on nanosphere lithography (NSL) and He ion implantation induced swelling
is studied in detail. It is shown that by implantation of keV He ions through
the nanometric openings of NSL masks regular arrays of hillocks and rings can
be created on silicon surfaces. The shape and size of these surface features can
be easily controlled by adjusting the ion dose and energy as well as the mask
size. Feature heights of more than 100 nm can be obtained, while feature distances
are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to
be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy
measurements of the surface morphology are supplemented by cross-sectional transmission
electron microscopy, revealing the inner structure of hillocks to consist of a
central cavity surrounded by a hierarchical arrangement of smaller voids. The
surface morphologies developed here have the potential to be useful for fixing
and separating nano-objects on a silicon surface.
article_number: 1181-DD10-02
article_type: original
author:
- first_name: Frederic J.C.
full_name: Fischer, Frederic J.C.
last_name: Fischer
- first_name: Michael
full_name: Weinl, Michael
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Bernd
full_name: Stritzker, Bernd
last_name: Stritzker
citation:
ama: Fischer FJC, Weinl M, Lindner J, Stritzker B. Nanoscale Surface Patterning
of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.
MRS Proceedings. 2009;1181. doi:10.1557/proc-1181-dd10-02
apa: Fischer, F. J. C., Weinl, M., Lindner, J., & Stritzker, B. (2009). Nanoscale
Surface Patterning of Silicon Using Local Swelling Induced by He Implantation
through NSL-Masks. MRS Proceedings, 1181. https://doi.org/10.1557/proc-1181-dd10-02
bibtex: '@article{Fischer_Weinl_Lindner_Stritzker_2009, title={Nanoscale Surface
Patterning of Silicon Using Local Swelling Induced by He Implantation through
NSL-Masks}, volume={1181}, DOI={10.1557/proc-1181-dd10-02},
number={1181-DD10-02}, journal={MRS Proceedings}, publisher={Cambridge University
Press (CUP)}, author={Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg
and Stritzker, Bernd}, year={2009} }'
chicago: Fischer, Frederic J.C., Michael Weinl, Jörg Lindner, and Bernd Stritzker.
“Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation
through NSL-Masks.” MRS Proceedings 1181 (2009). https://doi.org/10.1557/proc-1181-dd10-02.
ieee: F. J. C. Fischer, M. Weinl, J. Lindner, and B. Stritzker, “Nanoscale Surface
Patterning of Silicon Using Local Swelling Induced by He Implantation through
NSL-Masks,” MRS Proceedings, vol. 1181, 2009.
mla: Fischer, Frederic J. C., et al. “Nanoscale Surface Patterning of Silicon Using
Local Swelling Induced by He Implantation through NSL-Masks.” MRS Proceedings,
vol. 1181, 1181-DD10-02, Cambridge University Press (CUP), 2009, doi:10.1557/proc-1181-dd10-02.
short: F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181
(2009).
conference:
end_date: 2009-04-17
location: San Franicsco (USA)
name: MRS Spring Meeting 2009
start_date: 2009-04-13
date_created: 2018-08-27T13:21:44Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '15'
- _id: '286'
doi: 10.1557/proc-1181-dd10-02
intvolume: ' 1181'
language:
- iso: eng
publication: MRS Proceedings
publication_identifier:
issn:
- 1946-4274
publication_status: published
publisher: Cambridge University Press (CUP)
status: public
title: Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He
Implantation through NSL-Masks
type: journal_article
user_id: '55706'
volume: 1181
year: '2009'
...
---
_id: '4180'
abstract:
- lang: eng
text: We show that an optically driven carrier spin undergoes indirect dephasing
even in the absence of spin-reservoir coupling and illustrate it for phonon-induced
decoherence during optical spin rotation in a single quantum dot.
article_number: NMA1
author:
- first_name: Anna
full_name: Grodecka, Anna
last_name: Grodecka
- first_name: Pawel
full_name: Machnikowski, Pawel
last_name: Machnikowski
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: 'Grodecka A, Machnikowski P, Förstner J. Indirect Dephasing Channel for Optically
Controlled Spin in a Single Quantum Dot. In: Advances in Optical Sciences Congress.
OSA Technical Digest (CD) (Optical Society of America, 2009); 2009. doi:10.1364/nlo.2009.nma1'
apa: Grodecka, A., Machnikowski, P., & Förstner, J. (2009). Indirect Dephasing
Channel for Optically Controlled Spin in a Single Quantum Dot. In Advances
in Optical Sciences Congress. OSA Technical Digest (CD) (Optical Society of
America, 2009). https://doi.org/10.1364/nlo.2009.nma1
bibtex: '@inproceedings{Grodecka_Machnikowski_Förstner_2009, title={Indirect Dephasing
Channel for Optically Controlled Spin in a Single Quantum Dot}, DOI={10.1364/nlo.2009.nma1},
number={NMA1}, booktitle={Advances in Optical Sciences Congress}, publisher={OSA
Technical Digest (CD) (Optical Society of America, 2009)}, author={Grodecka, Anna
and Machnikowski, Pawel and Förstner, Jens}, year={2009} }'
chicago: Grodecka, Anna, Pawel Machnikowski, and Jens Förstner. “Indirect Dephasing
Channel for Optically Controlled Spin in a Single Quantum Dot.” In Advances
in Optical Sciences Congress. OSA Technical Digest (CD) (Optical Society of
America, 2009), 2009. https://doi.org/10.1364/nlo.2009.nma1.
ieee: A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect Dephasing Channel
for Optically Controlled Spin in a Single Quantum Dot,” in Advances in Optical
Sciences Congress, 2009.
mla: Grodecka, Anna, et al. “Indirect Dephasing Channel for Optically Controlled
Spin in a Single Quantum Dot.” Advances in Optical Sciences Congress, NMA1,
OSA Technical Digest (CD) (Optical Society of America, 2009), 2009, doi:10.1364/nlo.2009.nma1.
short: 'A. Grodecka, P. Machnikowski, J. Förstner, in: Advances in Optical Sciences
Congress, OSA Technical Digest (CD) (Optical Society of America, 2009), 2009.'
date_created: 2018-08-28T09:22:42Z
date_updated: 2022-01-06T07:00:30Z
doi: 10.1364/nlo.2009.nma1
keyword:
- tet_topic_qd
language:
- iso: eng
publication: Advances in Optical Sciences Congress
publication_identifier:
isbn:
- '9781557528735'
publication_status: published
publisher: OSA Technical Digest (CD) (Optical Society of America, 2009)
status: public
title: Indirect Dephasing Channel for Optically Controlled Spin in a Single Quantum
Dot
type: conference
user_id: '55706'
year: '2009'
...
---
_id: '4182'
abstract:
- lang: eng
text: "We demonstrate that an optically driven spin of a carrier in a quantum dot
undergoes indirect dephasing via\r\nconditional optically induced charge evolution
even in the absence of any direct interaction between the spin\r\nand its environment.
A generic model for the indirect dephasing with a three-component system with
spin,\r\ncharge, and reservoir is proposed. This indirect decoherence channel
is studied for the optical spin manipulation\r\nin a quantum dot with a microscopic
description of the charge-phonon interaction taking into account its\r\nnon-Markovian
nature."
article_number: '042331'
article_type: original
author:
- first_name: A.
full_name: Grodecka, A.
last_name: Grodecka
- first_name: P.
full_name: Machnikowski, P.
last_name: Machnikowski
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Grodecka A, Machnikowski P, Förstner J. Indirect spin dephasing via charge-state
decoherence in optical control schemes in quantum dots. Physical Review A.
2009;79(4). doi:10.1103/physreva.79.042331
apa: Grodecka, A., Machnikowski, P., & Förstner, J. (2009). Indirect spin dephasing
via charge-state decoherence in optical control schemes in quantum dots. Physical
Review A, 79(4). https://doi.org/10.1103/physreva.79.042331
bibtex: '@article{Grodecka_Machnikowski_Förstner_2009, title={Indirect spin dephasing
via charge-state decoherence in optical control schemes in quantum dots}, volume={79},
DOI={10.1103/physreva.79.042331},
number={4042331}, journal={Physical Review A}, publisher={American Physical Society
(APS)}, author={Grodecka, A. and Machnikowski, P. and Förstner, Jens}, year={2009}
}'
chicago: Grodecka, A., P. Machnikowski, and Jens Förstner. “Indirect Spin Dephasing
via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” Physical
Review A 79, no. 4 (2009). https://doi.org/10.1103/physreva.79.042331.
ieee: A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect spin dephasing via
charge-state decoherence in optical control schemes in quantum dots,” Physical
Review A, vol. 79, no. 4, 2009.
mla: Grodecka, A., et al. “Indirect Spin Dephasing via Charge-State Decoherence
in Optical Control Schemes in Quantum Dots.” Physical Review A, vol. 79,
no. 4, 042331, American Physical Society (APS), 2009, doi:10.1103/physreva.79.042331.
short: A. Grodecka, P. Machnikowski, J. Förstner, Physical Review A 79 (2009).
date_created: 2018-08-28T09:32:32Z
date_updated: 2022-01-06T07:00:31Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1103/physreva.79.042331
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T09:33:22Z
date_updated: 2018-09-04T19:36:35Z
file_id: '4183'
file_name: 2009 Grodecka,Machnikowski,Förstner_Indirect spin dephasing via charge-state
decoherence in optical control schemes in quantum dots.pdf
file_size: 192120
relation: main_file
file_date_updated: 2018-09-04T19:36:35Z
has_accepted_license: '1'
intvolume: ' 79'
issue: '4'
keyword:
- tet_topic_qd
language:
- iso: eng
oa: '1'
publication: Physical Review A
publication_identifier:
issn:
- 1050-2947
- 1094-1622
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Indirect spin dephasing via charge-state decoherence in optical control schemes
in quantum dots
type: journal_article
urn: '41826'
user_id: '158'
volume: 79
year: '2009'
...
---
_id: '4192'
abstract:
- lang: eng
text: "Buried ion beam synthesized 3C-SiC layers were revealed to the surface of
silicon wafers to provide lattice matched substrates for GaN thin film epitaxy.
Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six-
or four-fold crystal symmetry, respectively, were formed. GaN thin film growth
was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing
to the energy and momentum transfer of the ions – allows to deposit epitaxial
thin films at particularly low growth temperatures where both the stable hexagonal
and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction
(XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate
fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe
grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga
rich growth conditions seem to stabilize the formation of the cubic polytype.
It is obvious from XTEM studies that the high density of crystal defects in the
SiC layer is not transferred onto the growing GaN films and that the crystalline
quality of GaN films improves with increasing film thickness. The influence of
surface roughness and wettability, interfacial cavities and the nucleation of
twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN
thin films is discussed."
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: J.W.
full_name: Gerlach, J.W.
last_name: Gerlach
- first_name: B.
full_name: Murphy, B.
last_name: Murphy
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization
of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of
Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048
apa: Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., & Stritzker, B.
(2009). Structural characterization of cubic and hexagonal GaN thin films grown
by IBA–MBE on SiC/Si. Journal of Crystal Growth, 312(6), 762–769.
https://doi.org/10.1016/j.jcrysgro.2009.12.048
bibtex: '@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si},
volume={312}, DOI={10.1016/j.jcrysgro.2009.12.048},
number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen,
M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009},
pages={762–769} }'
chicago: 'Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker.
“Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE
on SiC/Si.” Journal of Crystal Growth 312, no. 6 (2009): 762–69. https://doi.org/10.1016/j.jcrysgro.2009.12.048.'
ieee: M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,”
Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009.
mla: Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN
Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth, vol.
312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:10.1016/j.jcrysgro.2009.12.048.
short: M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of
Crystal Growth 312 (2009) 762–769.
date_created: 2018-08-28T11:50:05Z
date_updated: 2022-01-06T07:00:32Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2009.12.048
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:50:45Z
date_updated: 2018-08-28T11:50:45Z
file_id: '4193'
file_name: Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown
by IBA-MBE on SiC-Si.pdf
file_size: 828431
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:50:45Z
has_accepted_license: '1'
intvolume: ' 312'
issue: '6'
language:
- iso: eng
page: 762-769
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Structural characterization of cubic and hexagonal GaN thin films grown by
IBA–MBE on SiC/Si
type: journal_article
user_id: '55706'
volume: 312
year: '2009'
...
---
_id: '4196'
abstract:
- lang: eng
text: The growth of cubic group III-nitrides is a direct way to eliminate polarization
effects, which inherently limit the fabrication of normally-off heterojunction
field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated
of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular
beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of
3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural
properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD).
HFETs with normally off and normally-on characteristics were fabricated of cubic
AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed
to detect the electron channel at the c-AlGaN/GaN hetero interface.
article_type: original
author:
- first_name: Elena
full_name: Tschumak, Elena
last_name: Tschumak
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown
by MBE on Ar+implanted 3C-SiC (001). physica status solidi (c). 2009;7(1):104-107.
doi:10.1002/pssc.200982615
apa: Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M.,
& As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted
3C-SiC (001). Physica Status Solidi (C), 7(1), 104–107. https://doi.org/10.1002/pssc.200982615
bibtex: '@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar
cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7},
DOI={10.1002/pssc.200982615},
number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak,
Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe,
M. and As, Donald}, year={2009}, pages={104–107} }'
chicago: 'Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M.
Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C) 7, no. 1 (2009): 104–7. https://doi.org/10.1002/pssc.200982615.'
ieee: E. Tschumak et al., “Non-polar cubic AlGaN/GaN HFETs grown by MBE on
Ar+implanted 3C-SiC (001),” physica status solidi (c), vol. 7, no. 1, pp.
104–107, 2009.
mla: Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C), vol. 7, no. 1, Wiley, 2009, pp.
104–07, doi:10.1002/pssc.200982615.
short: E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As,
Physica Status Solidi (C) 7 (2009) 104–107.
date_created: 2018-08-28T12:15:20Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1002/pssc.200982615
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:16:11Z
date_updated: 2018-08-28T12:16:11Z
file_id: '4197'
file_name: Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf
file_size: 213837
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:16:11Z
has_accepted_license: '1'
intvolume: ' 7'
issue: '1'
language:
- iso: eng
page: 104-107
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
- 1610-1642
publication_status: published
publisher: Wiley
status: public
title: Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)
type: journal_article
user_id: '55706'
volume: 7
year: '2009'
...
---
_id: '4198'
abstract:
- lang: eng
text: Three-dimensional (3D) photonic crystal exhibit direction-selective transmission
with respect to the center frequency of the stop gap. As a model system, the stop
gap of a 3D fcc inverted-opal photonic crystal is studied in the microwave regime
in detail using 3D polyamide models. The difference in the direction-selective
transmittance between crystals grown in two different high symmetry directions
is experimentally shown and compared to numerical simulations.
article_type: original
author:
- first_name: J.
full_name: Üpping, J.
last_name: Üpping
- first_name: P.T.
full_name: Miclea, P.T.
last_name: Miclea
- first_name: R.B.
full_name: Wehrspohn, R.B.
last_name: Wehrspohn
- first_name: T.
full_name: Baumgarten, T.
last_name: Baumgarten
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
citation:
ama: Üpping J, Miclea PT, Wehrspohn RB, Baumgarten T, Greulich-Weber S. Direction-selective
optical transmission of 3D fcc photonic crystals in the microwave regime. Photonics
and Nanostructures - Fundamentals and Applications. 2009;8(2):102-106. doi:10.1016/j.photonics.2009.11.002
apa: Üpping, J., Miclea, P. T., Wehrspohn, R. B., Baumgarten, T., & Greulich-Weber,
S. (2009). Direction-selective optical transmission of 3D fcc photonic crystals
in the microwave regime. Photonics and Nanostructures - Fundamentals and Applications,
8(2), 102–106. https://doi.org/10.1016/j.photonics.2009.11.002
bibtex: '@article{Üpping_Miclea_Wehrspohn_Baumgarten_Greulich-Weber_2009, title={Direction-selective
optical transmission of 3D fcc photonic crystals in the microwave regime}, volume={8},
DOI={10.1016/j.photonics.2009.11.002},
number={2}, journal={Photonics and Nanostructures - Fundamentals and Applications},
publisher={Elsevier BV}, author={Üpping, J. and Miclea, P.T. and Wehrspohn, R.B.
and Baumgarten, T. and Greulich-Weber, Siegmund}, year={2009}, pages={102–106}
}'
chicago: 'Üpping, J., P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, and Siegmund Greulich-Weber.
“Direction-Selective Optical Transmission of 3D Fcc Photonic Crystals in the Microwave
Regime.” Photonics and Nanostructures - Fundamentals and Applications 8,
no. 2 (2009): 102–6. https://doi.org/10.1016/j.photonics.2009.11.002.'
ieee: J. Üpping, P. T. Miclea, R. B. Wehrspohn, T. Baumgarten, and S. Greulich-Weber,
“Direction-selective optical transmission of 3D fcc photonic crystals in the microwave
regime,” Photonics and Nanostructures - Fundamentals and Applications,
vol. 8, no. 2, pp. 102–106, 2009.
mla: Üpping, J., et al. “Direction-Selective Optical Transmission of 3D Fcc Photonic
Crystals in the Microwave Regime.” Photonics and Nanostructures - Fundamentals
and Applications, vol. 8, no. 2, Elsevier BV, 2009, pp. 102–06, doi:10.1016/j.photonics.2009.11.002.
short: J. Üpping, P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, S. Greulich-Weber,
Photonics and Nanostructures - Fundamentals and Applications 8 (2009) 102–106.
date_created: 2018-08-28T12:19:16Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.photonics.2009.11.002
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:19:51Z
date_updated: 2018-08-28T12:19:51Z
file_id: '4199'
file_name: Direction-selective optical transmission of 3D fcc photonic crystals
in the microwave regime.pdf
file_size: 310534
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:19:51Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '2'
language:
- iso: eng
page: 102-106
publication: Photonics and Nanostructures - Fundamentals and Applications
publication_identifier:
issn:
- 1569-4410
publication_status: published
publisher: Elsevier BV
status: public
title: Direction-selective optical transmission of 3D fcc photonic crystals in the
microwave regime
type: journal_article
user_id: '55706'
volume: 8
year: '2009'
...
---
_id: '4219'
abstract:
- lang: eng
text: 'The solar cell concept presented here is based on 3C-SiC nano- or microwires
and conju¬gated polymers. Therefore the silicon carbide wires are fabricated by
a sol-gel route including a car-bothermal reduction step, allowing growth with
predetermined uniform diameters between 0.1 and 2μm and lengths up to several
centimetres. The design of our photovoltaic device is therein based on a p-i-n
structure, well known e.g. from silicon photovoltaics, involving an intrinsic
semiconduc¬tor as the central photoactive layer, sandwiched between two complementary
doped wide-bandgap semiconductors giving the driving force for charge separation.
In our case the 3C-SiC microwires act as the electron acceptor and simultaneously
as carrier material for all involved components of the photovoltaic element. '
article_type: original
author:
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
- first_name: M.
full_name: Zöller, M.
last_name: Zöller
- first_name: B.
full_name: Friedel, B.
last_name: Friedel
citation:
ama: Greulich-Weber S, Zöller M, Friedel B. Textile Solar Cells Based on SiC Microwires.
Materials Science Forum. 2009;615-617:239-242. doi:10.4028/www.scientific.net/msf.615-617.239
apa: Greulich-Weber, S., Zöller, M., & Friedel, B. (2009). Textile Solar Cells
Based on SiC Microwires. Materials Science Forum, 615–617,
239–242. https://doi.org/10.4028/www.scientific.net/msf.615-617.239
bibtex: '@article{Greulich-Weber_Zöller_Friedel_2009, title={Textile Solar Cells
Based on SiC Microwires}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.239},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber,
Siegmund and Zöller, M. and Friedel, B.}, year={2009}, pages={239–242} }'
chicago: 'Greulich-Weber, Siegmund, M. Zöller, and B. Friedel. “Textile Solar Cells
Based on SiC Microwires.” Materials Science Forum 615–617 (2009): 239–42.
https://doi.org/10.4028/www.scientific.net/msf.615-617.239.'
ieee: S. Greulich-Weber, M. Zöller, and B. Friedel, “Textile Solar Cells Based on
SiC Microwires,” Materials Science Forum, vol. 615–617, pp. 239–242, 2009.
mla: Greulich-Weber, Siegmund, et al. “Textile Solar Cells Based on SiC Microwires.”
Materials Science Forum, vol. 615–617, Trans Tech Publications, 2009, pp.
239–42, doi:10.4028/www.scientific.net/msf.615-617.239.
short: S. Greulich-Weber, M. Zöller, B. Friedel, Materials Science Forum 615–617
(2009) 239–242.
date_created: 2018-08-28T13:00:44Z
date_updated: 2022-01-06T07:00:38Z
department:
- _id: '15'
doi: 10.4028/www.scientific.net/msf.615-617.239
language:
- iso: eng
page: 239-242
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: Textile Solar Cells Based on SiC Microwires
type: journal_article
user_id: '55706'
volume: 615-617
year: '2009'
...