[{"date_created":"2019-02-08T09:39:43Z","status":"public","department":[{"_id":"211"}],"publication":"SKOPE","author":[{"full_name":"Ertl, H.","first_name":"H.","last_name":"Ertl"},{"id":"15280","last_name":"Kremer","full_name":"Kremer, H.-Hugo","first_name":"H.-Hugo"}],"title":"Innovation and Reform in College-based VET Contexts: An outline of research in England and Germany","user_id":"74378","citation":{"apa":"Ertl, H., & Kremer, H.-H. (2009). Innovation and Reform in College-based VET Contexts: An outline of research in England and Germany. SKOPE, (87).","ama":"Ertl H, Kremer H-H. Innovation and Reform in College-based VET Contexts: An outline of research in England and Germany. SKOPE. 2009;(87).","chicago":"Ertl, H., and H.-Hugo Kremer. “Innovation and Reform in College-Based VET Contexts: An Outline of Research in England and Germany.” SKOPE, no. 87 (2009).","mla":"Ertl, H., and H. Hugo Kremer. “Innovation and Reform in College-Based VET Contexts: An Outline of Research in England and Germany.” SKOPE, no. 87, 2009.","bibtex":"@article{Ertl_Kremer_2009, title={Innovation and Reform in College-based VET Contexts: An outline of research in England and Germany}, number={87}, journal={SKOPE}, author={Ertl, H. and Kremer, H.-Hugo}, year={2009} }","short":"H. Ertl, H.-H. Kremer, SKOPE (2009).","ieee":"H. Ertl and H.-H. Kremer, “Innovation and Reform in College-based VET Contexts: An outline of research in England and Germany,” SKOPE, no. 87, 2009."},"year":"2009","type":"journal_article","language":[{"iso":"eng"}],"main_file_link":[{"url":"http://www.skope.ox.ac.uk/wp-content/uploads/2014/04/SKOPEWP87.pdf"}],"issue":"87","date_updated":"2022-01-06T07:03:40Z","_id":"7605"},{"user_id":"16148","title":"Cornerstones of a renewable energy law for emerging markets in South America","extern":"1","date_created":"2019-03-05T13:38:09Z","status":"public","volume":37,"publication":"Energy Policy","department":[{"_id":"53"}],"author":[{"last_name":"Kissel","first_name":"J.","full_name":"Kissel, J."},{"last_name":"Hanitsch","first_name":"Rolf","full_name":"Hanitsch, Rolf"},{"id":"28836","last_name":"Krauter","full_name":"Krauter, Stefan","orcid":"0000-0002-3594-260X","first_name":"Stefan"}],"issue":"9/September 2009","_id":"8349","intvolume":" 37","date_updated":"2022-01-06T07:03:53Z","language":[{"iso":"eng"}],"page":"3621-3626","year":"2009","type":"journal_article","citation":{"bibtex":"@article{Kissel_Hanitsch_Krauter_2009, title={Cornerstones of a renewable energy law for emerging markets in South America}, volume={37}, number={9/September 2009}, journal={Energy Policy}, author={Kissel, J. and Hanitsch, Rolf and Krauter, Stefan}, year={2009}, pages={3621–3626} }","mla":"Kissel, J., et al. “Cornerstones of a Renewable Energy Law for Emerging Markets in South America.” Energy Policy, vol. 37, no. 9/September 2009, 2009, pp. 3621–26.","ama":"Kissel J, Hanitsch R, Krauter S. Cornerstones of a renewable energy law for emerging markets in South America. Energy Policy. 2009;37(9/September 2009):3621-3626.","apa":"Kissel, J., Hanitsch, R., & Krauter, S. (2009). Cornerstones of a renewable energy law for emerging markets in South America. Energy Policy, 37(9/September 2009), 3621–3626.","chicago":"Kissel, J., Rolf Hanitsch, and Stefan Krauter. “Cornerstones of a Renewable Energy Law for Emerging Markets in South America.” Energy Policy 37, no. 9/September 2009 (2009): 3621–26.","ieee":"J. Kissel, R. Hanitsch, and S. Krauter, “Cornerstones of a renewable energy law for emerging markets in South America,” Energy Policy, vol. 37, no. 9/September 2009, pp. 3621–3626, 2009.","short":"J. Kissel, R. Hanitsch, S. Krauter, Energy Policy 37 (2009) 3621–3626."}},{"date_created":"2019-03-05T13:40:46Z","status":"public","department":[{"_id":"53"}],"publication":"Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg (Deutschland), 21.–25. September 2009, S. 2846–2849","author":[{"last_name":"Preiss","first_name":"A.","full_name":"Preiss, A."},{"first_name":"Stefan","orcid":"0000-0002-3594-260X","full_name":"Krauter, Stefan","last_name":"Krauter","id":"28836"}],"user_id":"16148","title":"Yield prediction and comparison of a-Si modules","extern":"1","language":[{"iso":"eng"}],"year":"2009","citation":{"ieee":"A. Preiss and S. Krauter, “Yield prediction and comparison of a-Si modules,” in Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg (Deutschland), 21.–25. September 2009, S. 2846–2849, 2009.","short":"A. Preiss, S. Krauter, in: Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg (Deutschland), 21.–25. September 2009, S. 2846–2849, 2009.","bibtex":"@inproceedings{Preiss_Krauter_2009, title={Yield prediction and comparison of a-Si modules}, booktitle={Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg (Deutschland), 21.–25. September 2009, S. 2846–2849}, author={Preiss, A. and Krauter, Stefan}, year={2009} }","mla":"Preiss, A., and Stefan Krauter. “Yield Prediction and Comparison of A-Si Modules.” Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg (Deutschland), 21.–25. September 2009, S. 2846–2849, 2009.","ama":"Preiss A, Krauter S. Yield prediction and comparison of a-Si modules. In: Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg (Deutschland), 21.–25. September 2009, S. 2846–2849. ; 2009.","apa":"Preiss, A., & Krauter, S. (2009). Yield prediction and comparison of a-Si modules. In Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg (Deutschland), 21.–25. September 2009, S. 2846–2849.","chicago":"Preiss, A., and Stefan Krauter. “Yield Prediction and Comparison of A-Si Modules.” In Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg (Deutschland), 21.–25. September 2009, S. 2846–2849, 2009."},"type":"conference","conference":{"name":"24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg (Deutschland), 21.–25. September 2009"},"date_updated":"2022-01-06T07:03:53Z","_id":"8350"},{"publisher":"ACM","author":[{"last_name":"Mlynarski","full_name":"Mlynarski, Michael","first_name":"Michael"},{"full_name":"Güldali, Baris","first_name":"Baris","last_name":"Güldali"},{"first_name":"Melanie","full_name":"Späth, Melanie","last_name":"Späth"},{"first_name":"Gregor","full_name":"Engels, Gregor","last_name":"Engels","id":"107"}],"department":[{"_id":"66"}],"publication":"MoDeVVa '09: Proceedings of the 6th International Workshop on Model-Driven Engineering, Verification and Validation","status":"public","date_created":"2019-03-06T16:20:26Z","place":"New York, NY, USA","title":"From Design Models to Test Models by Means of Test Ideas","user_id":"52534","type":"conference","year":"2009","citation":{"mla":"Mlynarski, Michael, et al. “From Design Models to Test Models by Means of Test Ideas.” MoDeVVa ’09: Proceedings of the 6th International Workshop on Model-Driven Engineering, Verification and Validation, ACM, 2009, pp. 1–10, doi:http://doi.acm.org/10.1145/1656485.1656492.","bibtex":"@inproceedings{Mlynarski_Güldali_Späth_Engels_2009, place={New York, NY, USA}, title={From Design Models to Test Models by Means of Test Ideas}, DOI={http://doi.acm.org/10.1145/1656485.1656492}, booktitle={MoDeVVa ’09: Proceedings of the 6th International Workshop on Model-Driven Engineering, Verification and Validation}, publisher={ACM}, author={Mlynarski, Michael and Güldali, Baris and Späth, Melanie and Engels, Gregor}, year={2009}, pages={1–10} }","chicago":"Mlynarski, Michael, Baris Güldali, Melanie Späth, and Gregor Engels. “From Design Models to Test Models by Means of Test Ideas.” In MoDeVVa ’09: Proceedings of the 6th International Workshop on Model-Driven Engineering, Verification and Validation, 1–10. New York, NY, USA: ACM, 2009. http://doi.acm.org/10.1145/1656485.1656492.","apa":"Mlynarski, M., Güldali, B., Späth, M., & Engels, G. (2009). From Design Models to Test Models by Means of Test Ideas. In MoDeVVa ’09: Proceedings of the 6th International Workshop on Model-Driven Engineering, Verification and Validation (pp. 1–10). New York, NY, USA: ACM. http://doi.acm.org/10.1145/1656485.1656492","ama":"Mlynarski M, Güldali B, Späth M, Engels G. From Design Models to Test Models by Means of Test Ideas. In: MoDeVVa ’09: Proceedings of the 6th International Workshop on Model-Driven Engineering, Verification and Validation. New York, NY, USA: ACM; 2009:1-10. doi:http://doi.acm.org/10.1145/1656485.1656492","ieee":"M. Mlynarski, B. Güldali, M. Späth, and G. Engels, “From Design Models to Test Models by Means of Test Ideas,” in MoDeVVa ’09: Proceedings of the 6th International Workshop on Model-Driven Engineering, Verification and Validation, 2009, pp. 1–10.","short":"M. Mlynarski, B. Güldali, M. Späth, G. Engels, in: MoDeVVa ’09: Proceedings of the 6th International Workshop on Model-Driven Engineering, Verification and Validation, ACM, New York, NY, USA, 2009, pp. 1–10."},"page":"1-10","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:55Z","_id":"8431","doi":"http://doi.acm.org/10.1145/1656485.1656492"},{"_id":"8432","date_updated":"2022-01-06T07:03:55Z","language":[{"iso":"eng"}],"type":"conference","citation":{"short":"G. Engels, in: First European Workshop on Behaviour Modelling in Model Driven Architecture (BM-MDA), ACM Press (New York, NY, USA), New York, NY, USA, 2009, p. 5.","ieee":"G. Engels, “Automatic Generation of Behavioral Code - too ambitious or even unwanted?,” in First European Workshop on Behaviour Modelling in Model Driven Architecture (BM-MDA), 2009, p. 5.","chicago":"Engels, Gregor. “Automatic Generation of Behavioral Code - Too Ambitious or Even Unwanted?” In First European Workshop on Behaviour Modelling in Model Driven Architecture (BM-MDA), 5. New York, NY, USA: ACM Press (New York, NY, USA), 2009.","ama":"Engels G. Automatic Generation of Behavioral Code - too ambitious or even unwanted? In: First European Workshop on Behaviour Modelling in Model Driven Architecture (BM-MDA). New York, NY, USA: ACM Press (New York, NY, USA); 2009:5.","apa":"Engels, G. (2009). Automatic Generation of Behavioral Code - too ambitious or even unwanted? In First European Workshop on Behaviour Modelling in Model Driven Architecture (BM-MDA) (p. 5). New York, NY, USA: ACM Press (New York, NY, USA).","mla":"Engels, Gregor. “Automatic Generation of Behavioral Code - Too Ambitious or Even Unwanted?” First European Workshop on Behaviour Modelling in Model Driven Architecture (BM-MDA), ACM Press (New York, NY, USA), 2009, p. 5.","bibtex":"@inproceedings{Engels_2009, place={New York, NY, USA}, title={Automatic Generation of Behavioral Code - too ambitious or even unwanted?}, booktitle={First European Workshop on Behaviour Modelling in Model Driven Architecture (BM-MDA)}, publisher={ACM Press (New York, NY, USA)}, author={Engels, Gregor}, year={2009}, pages={5} }"},"year":"2009","page":"5","place":"New York, NY, USA","user_id":"52534","title":"Automatic Generation of Behavioral Code - too ambitious or even unwanted?","author":[{"id":"107","last_name":"Engels","full_name":"Engels, Gregor","first_name":"Gregor"}],"publisher":"ACM Press (New York, NY, USA)","department":[{"_id":"66"}],"publication":"First European Workshop on Behaviour Modelling in Model Driven Architecture (BM-MDA)","status":"public","date_created":"2019-03-06T16:20:27Z"},{"language":[{"iso":"eng"}],"page":"15-21","citation":{"bibtex":"@inproceedings{Salger_Engels_Hofmann_2009, title={Inspection Effectiveness for Different Quality Attributes of Software Requirement Specifications - An Industrial Case Study}, booktitle={Proceedings of the ICSE Workshop on Software Quality (WoSQ 2009)}, author={Salger, Frank and Engels, Gregor and Hofmann, Alexander}, year={2009}, pages={15–21} }","mla":"Salger, Frank, et al. “Inspection Effectiveness for Different Quality Attributes of Software Requirement Specifications - An Industrial Case Study.” Proceedings of the ICSE Workshop on Software Quality (WoSQ 2009), 2009, pp. 15–21.","chicago":"Salger, Frank, Gregor Engels, and Alexander Hofmann. “Inspection Effectiveness for Different Quality Attributes of Software Requirement Specifications - An Industrial Case Study.” In Proceedings of the ICSE Workshop on Software Quality (WoSQ 2009), 15–21, 2009.","ama":"Salger F, Engels G, Hofmann A. Inspection Effectiveness for Different Quality Attributes of Software Requirement Specifications - An Industrial Case Study. In: Proceedings of the ICSE Workshop on Software Quality (WoSQ 2009). ; 2009:15-21.","apa":"Salger, F., Engels, G., & Hofmann, A. (2009). Inspection Effectiveness for Different Quality Attributes of Software Requirement Specifications - An Industrial Case Study. In Proceedings of the ICSE Workshop on Software Quality (WoSQ 2009) (pp. 15–21).","ieee":"F. Salger, G. Engels, and A. Hofmann, “Inspection Effectiveness for Different Quality Attributes of Software Requirement Specifications - An Industrial Case Study,” in Proceedings of the ICSE Workshop on Software Quality (WoSQ 2009), 2009, pp. 15–21.","short":"F. Salger, G. Engels, A. Hofmann, in: Proceedings of the ICSE Workshop on Software Quality (WoSQ 2009), 2009, pp. 15–21."},"type":"conference","year":"2009","_id":"8433","date_updated":"2022-01-06T07:03:55Z","department":[{"_id":"66"}],"publication":"Proceedings of the ICSE Workshop on Software Quality (WoSQ 2009)","author":[{"last_name":"Salger","first_name":"Frank","full_name":"Salger, Frank"},{"full_name":"Engels, Gregor","first_name":"Gregor","id":"107","last_name":"Engels"},{"last_name":"Hofmann","full_name":"Hofmann, Alexander","first_name":"Alexander"}],"date_created":"2019-03-06T16:20:28Z","status":"public","user_id":"52534","title":"Inspection Effectiveness for Different Quality Attributes of Software Requirement Specifications - An Industrial Case Study"},{"abstract":[{"lang":"eng","text":"The software specification acts as a bridge between customers, architects, software developers and testers. If information gets lost or distorted when building this bridge, the wrong system will be built or the system will not be built in time and budget–or both! Standards and recommendations give advice on how to structure specifications or check software-engineering artefacts with reviews or inspections. But these constructive and analytical approaches are not well integrated with each other. Moreover, they are often too generic to efficiently support the specification of particular system types. In this paper, we present the integrated “specification framework” of Capgemini sd&m. It consists of our specification method for business information systems (BIS) and its concerted analytical counterpart, the “specification quality gate”. Since this framework is tailored to the specification of large BIS, it allows a quick ramp-up phase for software engineering projects without the need for extensive tailoring or extension."}],"title":"An Integrated Quality Assurance Framework for Specifying Business Information Systems","user_id":"52534","publication":"Proceedings of the Forum at the CAiSE 2009 Conference, Amsterdam (The Netherlands)","department":[{"_id":"66"}],"author":[{"last_name":"Salger","first_name":"Frank","full_name":"Salger, Frank"},{"first_name":"Stefan","full_name":"Sauer, Stefan","last_name":"Sauer","id":"447"},{"id":"107","last_name":"Engels","full_name":"Engels, Gregor","first_name":"Gregor"}],"publisher":"CEUR","volume":453,"date_created":"2019-03-06T16:20:30Z","status":"public","_id":"8434","intvolume":" 453","date_updated":"2022-01-06T07:03:55Z","page":"25-30","citation":{"short":"F. Salger, S. Sauer, G. Engels, in: Proceedings of the Forum at the CAiSE 2009 Conference, Amsterdam (The Netherlands), CEUR, 2009, pp. 25–30.","ieee":"F. Salger, S. Sauer, and G. Engels, “An Integrated Quality Assurance Framework for Specifying Business Information Systems,” in Proceedings of the Forum at the CAiSE 2009 Conference, Amsterdam (The Netherlands), 2009, vol. 453, pp. 25–30.","chicago":"Salger, Frank, Stefan Sauer, and Gregor Engels. “An Integrated Quality Assurance Framework for Specifying Business Information Systems.” In Proceedings of the Forum at the CAiSE 2009 Conference, Amsterdam (The Netherlands), 453:25–30. CEUR, 2009.","apa":"Salger, F., Sauer, S., & Engels, G. (2009). An Integrated Quality Assurance Framework for Specifying Business Information Systems. In Proceedings of the Forum at the CAiSE 2009 Conference, Amsterdam (The Netherlands) (Vol. 453, pp. 25–30). CEUR.","ama":"Salger F, Sauer S, Engels G. An Integrated Quality Assurance Framework for Specifying Business Information Systems. In: Proceedings of the Forum at the CAiSE 2009 Conference, Amsterdam (The Netherlands). Vol 453. CEUR; 2009:25-30.","mla":"Salger, Frank, et al. “An Integrated Quality Assurance Framework for Specifying Business Information Systems.” Proceedings of the Forum at the CAiSE 2009 Conference, Amsterdam (The Netherlands), vol. 453, CEUR, 2009, pp. 25–30.","bibtex":"@inproceedings{Salger_Sauer_Engels_2009, title={An Integrated Quality Assurance Framework for Specifying Business Information Systems}, volume={453}, booktitle={Proceedings of the Forum at the CAiSE 2009 Conference, Amsterdam (The Netherlands)}, publisher={CEUR}, author={Salger, Frank and Sauer, Stefan and Engels, Gregor}, year={2009}, pages={25–30} }"},"type":"conference","year":"2009","language":[{"iso":"eng"}]},{"intvolume":" 25","_id":"8435","date_updated":"2022-01-06T07:03:55Z","language":[{"iso":"eng"}],"type":"conference","citation":{"chicago":"Soltenborn, Christian, and Gregor Engels. “Towards Generalizing Visual Process Pattern.” In Proceedings of the 1st International Workshop on Visual Formalisms for Patterns (VFfP 2009), Corvallis, OR (USA), Vol. 25. Electronic Communications of the EASST. European Association of Software Science and Technology, 2009.","ama":"Soltenborn C, Engels G. Towards Generalizing Visual Process Pattern. In: Proceedings of the 1st International Workshop on Visual Formalisms for Patterns (VFfP 2009), Corvallis, OR (USA). Vol 25. Electronic Communications of the EASST. European Association of Software Science and Technology; 2009.","apa":"Soltenborn, C., & Engels, G. (2009). Towards Generalizing Visual Process Pattern. In Proceedings of the 1st International Workshop on Visual Formalisms for Patterns (VFfP 2009), Corvallis, OR (USA) (Vol. 25). European Association of Software Science and Technology.","bibtex":"@inproceedings{Soltenborn_Engels_2009, series={Electronic Communications of the EASST}, title={Towards Generalizing Visual Process Pattern}, volume={25}, booktitle={Proceedings of the 1st International Workshop on Visual Formalisms for Patterns (VFfP 2009), Corvallis, OR (USA)}, publisher={European Association of Software Science and Technology}, author={Soltenborn, Christian and Engels, Gregor}, year={2009}, collection={Electronic Communications of the EASST} }","mla":"Soltenborn, Christian, and Gregor Engels. “Towards Generalizing Visual Process Pattern.” Proceedings of the 1st International Workshop on Visual Formalisms for Patterns (VFfP 2009), Corvallis, OR (USA), vol. 25, European Association of Software Science and Technology, 2009.","short":"C. Soltenborn, G. Engels, in: Proceedings of the 1st International Workshop on Visual Formalisms for Patterns (VFfP 2009), Corvallis, OR (USA), European Association of Software Science and Technology, 2009.","ieee":"C. Soltenborn and G. Engels, “Towards Generalizing Visual Process Pattern,” in Proceedings of the 1st International Workshop on Visual Formalisms for Patterns (VFfP 2009), Corvallis, OR (USA), 2009, vol. 25."},"year":"2009","series_title":"Electronic Communications of the EASST","user_id":"14955","title":"Towards Generalizing Visual Process Pattern","abstract":[{"text":"Visual Process Pattern (VPP) is a visual language to describe constraints on the behavior of UML Activities. They have been developed for the sake of formulating and verifying requirements on business process models (with Activities being one possible description language). In the VPP approach, a visual pattern is translated into an LTL formula, which can then be verified against a transition system describing the behavior of the Activity under consideration. In this paper, we aim at generalizing VPP. We show how to formulate patterns more generally, using either concrete or abstract syntax of the behavioral model under consideration. Additionally, we describe how these more general patterns can be verified against a model’s behavior.","lang":"eng"}],"date_created":"2019-03-06T16:20:31Z","status":"public","volume":25,"publication":"Proceedings of the 1st International Workshop on Visual Formalisms for Patterns (VFfP 2009), Corvallis, OR (USA)","department":[{"_id":"66"}],"author":[{"orcid":"0000-0002-0342-8227","full_name":"Soltenborn, Christian","first_name":"Christian","id":"1737","last_name":"Soltenborn"},{"full_name":"Engels, Gregor","first_name":"Gregor","id":"107","last_name":"Engels"}],"publisher":"European Association of Software Science and Technology"},{"publication":"Proceedings of Produktlinien im Kontext (PIK09)","department":[{"_id":"66"}],"author":[{"full_name":"von der Maßen, Thomas","first_name":"Thomas","last_name":"von der Maßen"},{"last_name":"Wübbeke","full_name":"Wübbeke, Andreas","first_name":"Andreas"}],"date_created":"2019-03-06T16:20:32Z","status":"public","user_id":"52534","title":"Lösungsorientierte Software Produktlinienentwicklung in heterogenen Systemlandschaften","series_title":"Hildesheimer Informatikberichte","language":[{"iso":"eng"}],"page":"15-23","year":"2009","type":"conference","citation":{"ieee":"T. von der Maßen and A. Wübbeke, “Lösungsorientierte Software Produktlinienentwicklung in heterogenen Systemlandschaften,” in Proceedings of Produktlinien im Kontext (PIK09), 2009, pp. 15–23.","short":"T. von der Maßen, A. Wübbeke, in: Proceedings of Produktlinien Im Kontext (PIK09), 2009, pp. 15–23.","bibtex":"@inproceedings{von der Maßen_Wübbeke_2009, series={Hildesheimer Informatikberichte}, title={Lösungsorientierte Software Produktlinienentwicklung in heterogenen Systemlandschaften}, booktitle={Proceedings of Produktlinien im Kontext (PIK09)}, author={von der Maßen, Thomas and Wübbeke, Andreas}, year={2009}, pages={15–23}, collection={Hildesheimer Informatikberichte} }","mla":"von der Maßen, Thomas, and Andreas Wübbeke. “Lösungsorientierte Software Produktlinienentwicklung in Heterogenen Systemlandschaften.” Proceedings of Produktlinien Im Kontext (PIK09), 2009, pp. 15–23.","ama":"von der Maßen T, Wübbeke A. Lösungsorientierte Software Produktlinienentwicklung in heterogenen Systemlandschaften. In: Proceedings of Produktlinien Im Kontext (PIK09). Hildesheimer Informatikberichte. ; 2009:15-23.","apa":"von der Maßen, T., & Wübbeke, A. (2009). Lösungsorientierte Software Produktlinienentwicklung in heterogenen Systemlandschaften. In Proceedings of Produktlinien im Kontext (PIK09) (pp. 15–23).","chicago":"Maßen, Thomas von der, and Andreas Wübbeke. “Lösungsorientierte Software Produktlinienentwicklung in Heterogenen Systemlandschaften.” In Proceedings of Produktlinien Im Kontext (PIK09), 15–23. Hildesheimer Informatikberichte, 2009."},"date_updated":"2022-01-06T07:03:55Z","_id":"8436"},{"user_id":"42514","title":"Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system","publication":"Physical Review B","department":[{"_id":"15"},{"_id":"230"}],"author":[{"last_name":"Wilde","first_name":"M. A.","full_name":"Wilde, M. A."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Heyn, Ch.","first_name":"Ch.","last_name":"Heyn"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"last_name":"Grundler","full_name":"Grundler, D.","first_name":"D."}],"date_created":"2019-03-26T07:58:30Z","status":"public","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","_id":"8578","date_updated":"2022-01-06T07:03:57Z","doi":"10.1103/physrevb.79.125330","language":[{"iso":"eng"}],"citation":{"ieee":"M. A. Wilde, D. Reuter, C. Heyn, A. D. Wieck, and D. Grundler, “Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system,” Physical Review B, 2009.","short":"M.A. Wilde, D. Reuter, C. Heyn, A.D. Wieck, D. Grundler, Physical Review B (2009).","mla":"Wilde, M. A., et al. “Inversion-Asymmetry-Induced Spin Splitting Observed in the Quantum Oscillatory Magnetization of a Two-Dimensional Electron System.” Physical Review B, 2009, doi:10.1103/physrevb.79.125330.","bibtex":"@article{Wilde_Reuter_Heyn_Wieck_Grundler_2009, title={Inversion-asymmetry-induced spin splitting observed in the quantum oscillatory magnetization of a two-dimensional electron system}, DOI={10.1103/physrevb.79.125330}, journal={Physical Review B}, author={Wilde, M. A. and Reuter, Dirk and Heyn, Ch. and Wieck, A. D. and Grundler, D.}, year={2009} }","chicago":"Wilde, M. A., Dirk Reuter, Ch. Heyn, A. D. Wieck, and D. Grundler. “Inversion-Asymmetry-Induced Spin Splitting Observed in the Quantum Oscillatory Magnetization of a Two-Dimensional Electron System.” Physical Review B, 2009. https://doi.org/10.1103/physrevb.79.125330.","apa":"Wilde, M. A., Reuter, D., Heyn, C., Wieck, A. D., & Grundler, D. (2009). 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Diese werden aus Konfigurationen von Systemelementen mit einer inh{\\\"a}renten Teilintelligenz bestehen. Das Verhalten des Gesamtsystems wird durch die Kommunikation und Kooperation der intelligenten Systemelemente geprägt sein. Selbstoptimierung ermöglicht handlungsfähige Systeme mit inhärenter \"Intelligenz\", die in der Lage sind, selbständig und flexibel auf veränderte Betriebsbedingungen zu reagieren. Die Vision des SFB 614 ist eine neue Schule des Entwurfs von intelligenten mechatronischen Systemen. Diese neue Schule beruht auf einem Instrumentarium bestehend aus Vorgehensmodellen, Entwurfsmethoden und -werkzeugen und Praktiken. Das Instrumentarium entsteht im Wechselspiel mit der Entwicklung von anspruchsvollen Demonstratoren, die als repräsentativ für künftige Erzeugnisse des Maschinenbaus und verwandter Branchen wie der Automobilindustrie und der Medizintechnik gelten können. Vor diesem Hintergrund zeichnet sich die Herausforderung ab, derartige Systeme zuverlässig zu gestalten. Wir haben statt Zuverlässigkeit den Begriff Verlässlichkeit gewählt, weil er die Aspekte Verfügbarkeit, Zuverlässigkeit, Sicherheit und Vertraulichkeit umfasst und somit unser Anliegen auf den Weg zu den Erzeugnissen von morgen treffend zum Ausdruck bringt. Das vorliegende Buch ist das Ergebnis der projektübergreifenden interdisziplinären Zusammenarbeit in dem Arbeitskreis \"Sicherheit und Stabilität\" des SFB 614. Es gibt eine gut aufbereitete Einführung in den umfassenden Themenkomplex Verlässlichkeit und zeigt anhand von anspruchsvollen Beispielen der fortgeschrittenen Mechatronik, wie komplexe, stark durch Informations- und Kommunikationstechnik geprägte technische Systeme verlässlich gestaltet werden können. Dabei wird deutlich, dass das Wirkparadigma der Selbstoptimierung nicht nur größere Anstrengungen erfordert, um Verlässlichkeit zu erreichen, sondern auch neue Möglichkeiten für mehr Verlässlichkeit eröffnet.","lang":"eng"}],"user_id":"55222","title":"Verlässlichkeit selbstoptimierender Systeme -- Potenziale nutzen und Risiken vermeiden","series_title":"HNI-Verlagsschriftenreihe","language":[{"iso":"eng"}],"citation":{"ieee":"A. Dell’Aere et al., Verlässlichkeit selbstoptimierender Systeme -- Potenziale nutzen und Risiken vermeiden, vol. 235. Paderborn: Heinz Nixdorf Institut, Universität Paderborn, 2009.","short":"A. Dell’Aere, M. Hirsch, B. Klöpper, M. Koester, A. Krup, M. Krüger, T. Müller, S. Oberthür, S. Pook, C. Priesterjahn, C. Romaus, A. Schmidt, C. Sondermann-Wölke, M. Tichy, H. Vöcking, D. 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Vol. 235, Heinz Nixdorf Institut, Universität Paderborn, 2009.","bibtex":"@book{Dell’Aere_Hirsch_Klöpper_Koester_Krup_Krüger_Müller_Oberthür_Pook_Priesterjahn_et al._2009, place={Paderborn}, series={HNI-Verlagsschriftenreihe}, title={Verlässlichkeit selbstoptimierender Systeme -- Potenziale nutzen und Risiken vermeiden}, volume={235}, publisher={Heinz Nixdorf Institut, Universität Paderborn}, author={Dell’Aere, Alessandro and Hirsch, Martin and Klöpper, Benjamin and Koester, Markus and Krup, Alexander and Krüger, Martin and Müller, Thomas and Oberthür, Simon and Pook, Sebastian and Priesterjahn, Claudia and et al.}, year={2009}, collection={HNI-Verlagsschriftenreihe} }","chicago":"Dell’Aere, Alessandro, Martin Hirsch, Benjamin Klöpper, Markus Koester, Alexander Krup, Martin Krüger, Thomas Müller, et al. Verlässlichkeit Selbstoptimierender Systeme -- Potenziale Nutzen Und Risiken Vermeiden. Vol. 235. HNI-Verlagsschriftenreihe. 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Paderborn: Heinz Nixdorf Institut, Universität Paderborn."},"type":"book","year":"2009","_id":"9579","date_updated":"2022-01-06T07:04:16Z","intvolume":" 235"},{"author":[{"id":"66268","last_name":"Kakvi","full_name":"Kakvi, Saqib","first_name":"Saqib"}],"publication":"Lecture Notes in Computer Science","department":[{"_id":"558"}],"status":"public","date_created":"2019-05-06T09:54:39Z","publication_identifier":{"isbn":["9783642040511","9783642040528"],"issn":["0302-9743","1611-3349"]},"publication_status":"published","place":"Berlin, Heidelberg","extern":"1","user_id":"66268","title":"Reinforcement Learning for Blackjack","language":[{"iso":"eng"}],"type":"book_chapter","year":"2009","citation":{"bibtex":"@inbook{Kakvi_2009, place={Berlin, Heidelberg}, title={Reinforcement Learning for Blackjack}, DOI={10.1007/978-3-642-04052-8_43}, booktitle={Lecture Notes in Computer Science}, author={Kakvi, Saqib}, year={2009} }","mla":"Kakvi, Saqib. “Reinforcement Learning for Blackjack.” Lecture Notes in Computer Science, 2009, doi:10.1007/978-3-642-04052-8_43.","chicago":"Kakvi, Saqib. “Reinforcement Learning for Blackjack.” In Lecture Notes in Computer Science. 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Metzler Verlag","date_created":"2019-05-13T07:35:06Z","status":"public","volume":8,"intvolume":" 8","_id":"9727","page":"409-410","type":"encyclopedia_article","year":"2009","citation":{"short":"C. Flotmann, in: H.L. Arnold (Ed.), Kindlers Literaturlexikon, 3rd ed., J.B. Metzler Verlag, Stuttgart, 2009, pp. 409–410.","ieee":"C. Flotmann, “Lionel Johnson,” in Kindlers Literaturlexikon, 3rd ed., vol. 8, H. L. Arnold, Ed. Stuttgart: J.B. Metzler Verlag, 2009, pp. 409–410.","chicago":"Flotmann, Christina. “Lionel Johnson.” In Kindlers Literaturlexikon, edited by Heinz Ludwig Arnold, 3rd ed., 8:409–10. Stuttgart: J.B. Metzler Verlag, 2009.","ama":"Flotmann C. Lionel Johnson. In: Arnold HL, ed. Kindlers Literaturlexikon. Vol 8. 3rd ed. Stuttgart: J.B. Metzler Verlag; 2009:409-410.","apa":"Flotmann, C. (2009). Lionel Johnson. In H. L. Arnold (Ed.), Kindlers Literaturlexikon (3rd ed., Vol. 8, pp. 409–410). Stuttgart: J.B. Metzler Verlag.","mla":"Flotmann, Christina. “Lionel Johnson.” Kindlers Literaturlexikon, edited by Heinz Ludwig Arnold, 3rd ed., vol. 8, J.B. Metzler Verlag, 2009, pp. 409–10.","bibtex":"@inbook{Flotmann_2009, place={Stuttgart}, edition={3}, title={Lionel Johnson}, volume={8}, booktitle={Kindlers Literaturlexikon}, publisher={J.B. Metzler Verlag}, author={Flotmann, Christina}, editor={Arnold, Heinz LudwigEditor}, year={2009}, pages={409–410} }"},"place":"Stuttgart","title":"Lionel Johnson","edition":"3","department":[{"_id":"36"},{"_id":"1"},{"_id":"380"}],"publication_status":"published","editor":[{"last_name":"Arnold","first_name":"Heinz Ludwig","full_name":"Arnold, Heinz Ludwig"}],"date_updated":"2022-01-06T07:04:19Z","language":[{"iso":"ger"}]},{"title":"Modellbasierte Entwicklung piezoelektrischer Trägheitsmotoren","place":"Paderborn","editor":[{"last_name":"Gausemeier","first_name":"Jürgen","full_name":"Gausemeier, Jürgen"},{"full_name":"Rammig, Franz","first_name":"Franz","last_name":"Rammig"},{"last_name":" Schäfer","first_name":" Wilhelm","full_name":" Schäfer, Wilhelm"},{"full_name":"Trächtler, Ansgar","first_name":"Ansgar","last_name":"Trächtler"}],"publication_identifier":{"issn":["1948-5719"]},"department":[{"_id":"151"}],"date_updated":"2022-01-06T07:04:19Z","language":[{"iso":"eng"}],"series_title":"HNI-Verlagsschriftenreihe","user_id":"55222","abstract":[{"text":"Die Entwicklung piezoelektrischer Tr{\\\"a}gheitsmotoren basiert derzeit auf Erfahrungswissen und Prototypenbau. Es existiert kein allgemeines Modell und keine Methodik f{\\\"u}r die systematische Entwicklung dieser Motoren. In diesem Beitrag stellen wir einen Ansatz zur Entwicklung einer solchen Methodik und den von uns aufgebauten Versuchsmotor vor. Der Motor ist modular aufgebaut; er besteht im Wesentlichen aus einer piezoelektrischen Antriebseinheit, einem Antriebsstab und dem zu bewegenden Schlitten. Eine wesentliche Aufgabe bei der modellbasierten Entwicklung von Tr{\\\"a}gheitsmotoren ist die hinreichende Beschreibung des dynamischen Verhaltens der Antriebseinheit. Um ein geeignetes Modell zu finden, bzw. um nachzuweisen, dass einfache parametrische Modelle gen{\\\"u}gen, wird die Antriebseinheit des Motors detailliert untersucht. Es zeigt sich, dass der derzeitige Aufbau eine Reihe von Nachteilen aufweist, die durch eine teilweise Neukonstruktion der Antriebseinheit beseitigt oder zumindest entsch{\\\"a}rft werden k{\\\"o}nnen.","lang":"eng"}],"status":"public","date_created":"2019-05-13T08:59:32Z","volume":250,"publisher":"Heinz Nixdorf Institut, Universität Paderborn","author":[{"last_name":"Hunstig","first_name":"Matthias","full_name":"Hunstig, Matthias"},{"id":"210","last_name":"Hemsel","full_name":"Hemsel, Tobias","first_name":"Tobias"}],"keyword":["Piezoelektrischer Tr{\\"],"publication":"6. Paderborner Workshop Entwurf mechatronischer Systeme","_id":"9735","intvolume":" 250","citation":{"bibtex":"@inproceedings{Hunstig_Hemsel_2009, place={Paderborn}, series={HNI-Verlagsschriftenreihe}, title={Modellbasierte Entwicklung piezoelektrischer Trägheitsmotoren}, volume={250}, booktitle={6. Paderborner Workshop Entwurf mechatronischer Systeme}, publisher={Heinz Nixdorf Institut, Universität Paderborn}, author={Hunstig, Matthias and Hemsel, Tobias}, editor={Gausemeier, Jürgen and Rammig, Franz and Schäfer, Wilhelm and Trächtler, AnsgarEditors}, year={2009}, pages={85–96}, collection={HNI-Verlagsschriftenreihe} }","mla":"Hunstig, Matthias, and Tobias Hemsel. “Modellbasierte Entwicklung Piezoelektrischer Trägheitsmotoren.” 6. Paderborner Workshop Entwurf Mechatronischer Systeme, edited by Jürgen Gausemeier et al., vol. 250, Heinz Nixdorf Institut, Universität Paderborn, 2009, pp. 85–96.","apa":"Hunstig, M., & Hemsel, T. (2009). Modellbasierte Entwicklung piezoelektrischer Trägheitsmotoren. In J. Gausemeier, F. Rammig, Wilhelm Schäfer, & A. Trächtler (Eds.), 6. Paderborner Workshop Entwurf mechatronischer Systeme (Vol. 250, pp. 85–96). Paderborn: Heinz Nixdorf Institut, Universität Paderborn.","ama":"Hunstig M, Hemsel T. Modellbasierte Entwicklung piezoelektrischer Trägheitsmotoren. In: Gausemeier J, Rammig F, Schäfer Wilhelm, Trächtler A, eds. 6. Paderborner Workshop Entwurf Mechatronischer Systeme. Vol 250. HNI-Verlagsschriftenreihe. Paderborn: Heinz Nixdorf Institut, Universität Paderborn; 2009:85-96.","chicago":"Hunstig, Matthias, and Tobias Hemsel. “Modellbasierte Entwicklung Piezoelektrischer Trägheitsmotoren.” In 6. Paderborner Workshop Entwurf Mechatronischer Systeme, edited by Jürgen Gausemeier, Franz Rammig, Wilhelm Schäfer, and Ansgar Trächtler, 250:85–96. HNI-Verlagsschriftenreihe. Paderborn: Heinz Nixdorf Institut, Universität Paderborn, 2009.","ieee":"M. Hunstig and T. Hemsel, “Modellbasierte Entwicklung piezoelektrischer Trägheitsmotoren,” in 6. Paderborner Workshop Entwurf mechatronischer Systeme, 2009, vol. 250, pp. 85–96.","short":"M. Hunstig, T. Hemsel, in: J. Gausemeier, F. Rammig, Wilhelm Schäfer, A. Trächtler (Eds.), 6. Paderborner Workshop Entwurf Mechatronischer Systeme, Heinz Nixdorf Institut, Universität Paderborn, Paderborn, 2009, pp. 85–96."},"year":"2009","type":"conference","page":"85-96"},{"page":"104 -111","citation":{"ama":"Klöpper B, Sondermann-Wölke C, Romaus C, Vöcking H. Probabilistic planning integrated in a multi-level dependability concept for mechatronic systems. In: Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE Symposium On. ; 2009:104-111. doi:10.1109/CICA.2009.4982790","apa":"Klöpper, B., Sondermann-Wölke, C., Romaus, C., & Vöcking, H. (2009). Probabilistic planning integrated in a multi-level dependability concept for mechatronic systems. In Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE Symposium on (pp. 104–111). https://doi.org/10.1109/CICA.2009.4982790","chicago":"Klöpper, Benjamin, Christoph Sondermann-Wölke, Christoph Romaus, and Henner Vöcking. “Probabilistic Planning Integrated in a Multi-Level Dependability Concept for Mechatronic Systems.” In Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE Symposium On, 104–11, 2009. https://doi.org/10.1109/CICA.2009.4982790.","bibtex":"@inproceedings{Klöpper_Sondermann-Wölke_Romaus_Vöcking_2009, title={Probabilistic planning integrated in a multi-level dependability concept for mechatronic systems}, DOI={10.1109/CICA.2009.4982790}, booktitle={Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE Symposium on}, author={Klöpper, Benjamin and Sondermann-Wölke, Christoph and Romaus, Christoph and Vöcking, Henner}, year={2009}, pages={104–111} }","mla":"Klöpper, Benjamin, et al. “Probabilistic Planning Integrated in a Multi-Level Dependability Concept for Mechatronic Systems.” Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE Symposium On, 2009, pp. 104–11, doi:10.1109/CICA.2009.4982790.","short":"B. Klöpper, C. Sondermann-Wölke, C. Romaus, H. Vöcking, in: Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE Symposium On, 2009, pp. 104–111.","ieee":"B. Klöpper, C. Sondermann-Wölke, C. Romaus, and H. Vöcking, “Probabilistic planning integrated in a multi-level dependability concept for mechatronic systems,” in Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE Symposium on, 2009, pp. 104–111."},"year":"2009","type":"conference","language":[{"iso":"eng"}],"doi":"10.1109/CICA.2009.4982790","_id":"9736","date_updated":"2022-01-06T07:04:19Z","date_created":"2019-05-13T09:03:57Z","status":"public","keyword":["multilevel dependability concept","probabilistic planning","self-optimizing mechatronic systems","systems reliability","mechatronics","planning (artificial intelligence)","self-adjusting systems"],"department":[{"_id":"151"}],"publication":"Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE Symposium on","author":[{"last_name":"Klöpper","full_name":"Klöpper, Benjamin","first_name":"Benjamin"},{"full_name":"Sondermann-Wölke, Christoph","first_name":"Christoph","last_name":"Sondermann-Wölke"},{"last_name":"Romaus","full_name":"Romaus, Christoph","first_name":"Christoph"},{"last_name":"Vöcking","full_name":"Vöcking, Henner","first_name":"Henner"}],"quality_controlled":"1","title":"Probabilistic planning integrated in a multi-level dependability concept for mechatronic systems","user_id":"55222","abstract":[{"text":"Self-optimizing mechatronic systems are a new class of technical systems. On the one hand, new challenges regarding dependability arise from their additional complexity and adaptivity. On the other hand, their abilities enable new concepts and methods to improve the dependability of mechatronic systems. This paper introduces a multi-level dependability concept for self-optimizing mechatronic systems and shows how planning can be used to improve the availability and reliability of systems in the operating stages.","lang":"eng"}]},{"date_updated":"2022-01-06T07:04:19Z","_id":"9738","intvolume":" 1","type":"journal_article","citation":{"chicago":"Sattel, Thomas, Tobias Hesse, Christoph Sondermann-Wölke, and Thorsten Hüfner. “Potenzialfeldmethoden Zur Fahrzeugführung Für Fahrerassistenzsysteme Zum Automatisierten Fahren.” Memo - Mechatronik Mobil 1 (2009): 30–40.","apa":"Sattel, T., Hesse, T., Sondermann-Wölke, C., & Hüfner, T. (2009). Potenzialfeldmethoden zur Fahrzeugführung für Fahrerassistenzsysteme zum automatisierten Fahren. Memo - Mechatronik Mobil, 1, 30–40.","ama":"Sattel T, Hesse T, Sondermann-Wölke C, Hüfner T. Potenzialfeldmethoden zur Fahrzeugführung für Fahrerassistenzsysteme zum automatisierten Fahren. memo - mechatronik mobil. 2009;1:30-40.","mla":"Sattel, Thomas, et al. “Potenzialfeldmethoden Zur Fahrzeugführung Für Fahrerassistenzsysteme Zum Automatisierten Fahren.” Memo - Mechatronik Mobil, vol. 1, 2009, pp. 30–40.","bibtex":"@article{Sattel_Hesse_Sondermann-Wölke_Hüfner_2009, title={Potenzialfeldmethoden zur Fahrzeugführung für Fahrerassistenzsysteme zum automatisierten Fahren}, volume={1}, journal={memo - mechatronik mobil}, author={Sattel, Thomas and Hesse, Tobias and Sondermann-Wölke, Christoph and Hüfner, Thorsten}, year={2009}, pages={30–40} }","short":"T. Sattel, T. Hesse, C. Sondermann-Wölke, T. Hüfner, Memo - Mechatronik Mobil 1 (2009) 30–40.","ieee":"T. Sattel, T. Hesse, C. Sondermann-Wölke, and T. Hüfner, “Potenzialfeldmethoden zur Fahrzeugführung für Fahrerassistenzsysteme zum automatisierten Fahren,” memo - mechatronik mobil, vol. 1, pp. 30–40, 2009."},"year":"2009","page":"30-40","language":[{"iso":"eng"}],"title":"Potenzialfeldmethoden zur Fahrzeugführung für Fahrerassistenzsysteme zum automatisierten Fahren","user_id":"55222","volume":1,"status":"public","date_created":"2019-05-13T09:12:26Z","author":[{"last_name":"Sattel","full_name":"Sattel, Thomas","first_name":"Thomas"},{"first_name":"Tobias","full_name":"Hesse, Tobias","last_name":"Hesse"},{"last_name":"Sondermann-Wölke","first_name":"Christoph","full_name":"Sondermann-Wölke, Christoph"},{"last_name":"Hüfner","full_name":"Hüfner, Thorsten","first_name":"Thorsten"}],"department":[{"_id":"151"}],"publication":"memo - mechatronik mobil"},{"intvolume":" 250","_id":"9740","page":"231 - 242","type":"conference","citation":{"bibtex":"@inproceedings{Sondermann-Wölke_Geisler_Hirsch_Hemsel_2009, place={Paderborn}, series={HNI-Verlagsschriftenreihe}, title={Verlässlichkeit im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs}, volume={250}, booktitle={Entwurf mechatronischer Systeme}, author={Sondermann-Wölke, Christoph and Geisler, Jens and Hirsch, Martin and Hemsel, Tobias}, editor={Gausemeier, Jürgen and Rammig, Franz Josef and Trächtler, AnsgerEditors}, year={2009}, pages={231–242}, collection={HNI-Verlagsschriftenreihe} }","mla":"Sondermann-Wölke, Christoph, et al. “Verlässlichkeit Im Aktiven Selbstoptimierenden Spurführungsmodul Eines Schienengebundenen Fahrzeugs.” Entwurf Mechatronischer Systeme, edited by Jürgen Gausemeier et al., vol. 250, 2009, pp. 231–42.","ama":"Sondermann-Wölke C, Geisler J, Hirsch M, Hemsel T. Verlässlichkeit im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs. In: Gausemeier J, Rammig FJ, Trächtler A, eds. Entwurf Mechatronischer Systeme. Vol 250. HNI-Verlagsschriftenreihe. Paderborn; 2009:231-242.","apa":"Sondermann-Wölke, C., Geisler, J., Hirsch, M., & Hemsel, T. (2009). Verlässlichkeit im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs. In J. Gausemeier, F. J. Rammig, & A. Trächtler (Eds.), Entwurf mechatronischer Systeme (Vol. 250, pp. 231–242). Paderborn.","chicago":"Sondermann-Wölke, Christoph, Jens Geisler, Martin Hirsch, and Tobias Hemsel. “Verlässlichkeit Im Aktiven Selbstoptimierenden Spurführungsmodul Eines Schienengebundenen Fahrzeugs.” In Entwurf Mechatronischer Systeme, edited by Jürgen Gausemeier, Franz Josef Rammig, and Ansger Trächtler, 250:231–42. HNI-Verlagsschriftenreihe. Paderborn, 2009.","ieee":"C. Sondermann-Wölke, J. Geisler, M. Hirsch, and T. Hemsel, “Verlässlichkeit im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs,” in Entwurf mechatronischer Systeme, 2009, vol. 250, pp. 231–242.","short":"C. Sondermann-Wölke, J. Geisler, M. Hirsch, T. Hemsel, in: J. Gausemeier, F.J. Rammig, A. Trächtler (Eds.), Entwurf Mechatronischer Systeme, Paderborn, 2009, pp. 231–242."},"year":"2009","user_id":"55222","abstract":[{"text":"Die Integration von Selbstoptimierung in mechatronische Systeme beinhaltet sowohl Risiken als auch Potenziale für die Verlässlichkeit. Die Risiken entstehen durch die Selbstoptimierung in den komplexen Systemen, da das Systemverhalten nur begrenzt im Voraus vorhersehbar ist. Daher wurde innerhalb des Sonderforschungsbereichs 614 ''Selbstoptimierende Systeme des Maschinenbaus\" ein mehrstufiges Verlässlichkeitskonzept entworfen, welches das Ziel Verlässlichkeit stärker im Zielsystem verankert. In diesem Beitrag wird zum einen das erarbeitete Verlässlichkeitskonzept und zum anderen die Anwendung dieses Konzepts innerhalb des aktiven Spurführungsmoduls eines schienengebundenen Fahrzeugs vorgestellt. Um Programmierfehler auszuschließen wurde das Verlässlichkeitskonzept modelliert und über Model Checking verifiziert. Anhand von Simulationsergebnissen wird gezeigt, wie durch das mehrstufige Verlässlichkeitskonzept auf einen Ausfall eines Wirbelstromsensors des aktiven Spurführungsmoduls reagiert werden kann.","lang":"eng"}],"date_created":"2019-05-13T09:17:07Z","status":"public","volume":250,"keyword":["Verlässigkeit"],"publication":"Entwurf mechatronischer Systeme","author":[{"first_name":"Christoph","full_name":"Sondermann-Wölke, Christoph","last_name":"Sondermann-Wölke"},{"first_name":"Jens","full_name":"Geisler, Jens","last_name":"Geisler"},{"first_name":"Martin","full_name":"Hirsch, Martin","last_name":"Hirsch"},{"first_name":"Tobias","full_name":"Hemsel, Tobias","last_name":"Hemsel","id":"210"}],"date_updated":"2022-01-06T07:04:19Z","language":[{"iso":"eng"}],"series_title":"HNI-Verlagsschriftenreihe","title":"Verlässlichkeit im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs","place":"Paderborn","editor":[{"last_name":"Gausemeier","first_name":"Jürgen","full_name":"Gausemeier, Jürgen"},{"full_name":"Rammig, Franz Josef","first_name":"Franz Josef","last_name":"Rammig"},{"first_name":"Ansger","full_name":"Trächtler, Ansger","last_name":"Trächtler"}],"department":[{"_id":"151"}]},{"date_updated":"2022-01-06T07:04:19Z","_id":"9741","intvolume":" 2065","language":[{"iso":"eng"}],"citation":{"mla":"Sondermann-Wölke, Christoph, et al. “Menschliche Unzuverlässigkeit Als Grundlage Für Den Entwurf von Kollisionsvermeidungssystemen.” 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung Und Betrieb Zuverlässiger Produkte, Leonberg, vol. 2065, 2009, pp. 335–40.","bibtex":"@inproceedings{Sondermann-Wölke_Hesse_Sattel_Hemsel_2009, place={Düsseldorf}, series={VDI-Berichte}, title={Menschliche Unzuverlässigkeit als Grundlage für den Entwurf von Kollisionsvermeidungssystemen.}, volume={2065}, booktitle={24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb zuverlässiger Produkte, Leonberg}, author={Sondermann-Wölke, Christoph and Hesse, Tobias and Sattel, Thomas and Hemsel, Tobias}, year={2009}, pages={335–340}, collection={VDI-Berichte} }","apa":"Sondermann-Wölke, C., Hesse, T., Sattel, T., & Hemsel, T. (2009). Menschliche Unzuverlässigkeit als Grundlage für den Entwurf von Kollisionsvermeidungssystemen. In 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb zuverlässiger Produkte, Leonberg (Vol. 2065, pp. 335–340). Düsseldorf.","ama":"Sondermann-Wölke C, Hesse T, Sattel T, Hemsel T. Menschliche Unzuverlässigkeit als Grundlage für den Entwurf von Kollisionsvermeidungssystemen. In: 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung Und Betrieb Zuverlässiger Produkte, Leonberg. Vol 2065. VDI-Berichte. Düsseldorf; 2009:335-340.","chicago":"Sondermann-Wölke, Christoph, Tobias Hesse, Thomas Sattel, and Tobias Hemsel. “Menschliche Unzuverlässigkeit Als Grundlage Für Den Entwurf von Kollisionsvermeidungssystemen.” In 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung Und Betrieb Zuverlässiger Produkte, Leonberg, 2065:335–40. VDI-Berichte. Düsseldorf, 2009.","ieee":"C. Sondermann-Wölke, T. Hesse, T. Sattel, and T. Hemsel, “Menschliche Unzuverlässigkeit als Grundlage für den Entwurf von Kollisionsvermeidungssystemen.,” in 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb zuverlässiger Produkte, Leonberg, 2009, vol. 2065, pp. 335–340.","short":"C. Sondermann-Wölke, T. Hesse, T. Sattel, T. Hemsel, in: 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung Und Betrieb Zuverlässiger Produkte, Leonberg, Düsseldorf, 2009, pp. 335–340."},"type":"conference","year":"2009","page":"335 - 340","series_title":"VDI-Berichte","user_id":"55222","title":"Menschliche Unzuverlässigkeit als Grundlage für den Entwurf von Kollisionsvermeidungssystemen.","place":"Düsseldorf","status":"public","date_created":"2019-05-13T09:27:29Z","volume":2065,"author":[{"last_name":"Sondermann-Wölke","full_name":"Sondermann-Wölke, Christoph","first_name":"Christoph"},{"last_name":"Hesse","first_name":"Tobias","full_name":"Hesse, Tobias"},{"last_name":"Sattel","first_name":"Thomas","full_name":"Sattel, Thomas"},{"first_name":"Tobias","full_name":"Hemsel, Tobias","last_name":"Hemsel","id":"210"}],"department":[{"_id":"151"}],"publication":"24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb zuverlässiger Produkte, Leonberg"},{"abstract":[{"lang":"eng","text":"New mechatronic systems, called self-optimizing systems, are able to adapt their behavior according to environmental, user and system specific influences. Self-optimizing systems are complex and due to their non-deterministic behavior comprise hidden risks, which cannot be foreseen in the design phase of the system. Therefore, this paper presents modifications of the current condition monitoring policy, to be able to cope with this new kind of systems. Beside avoiding critical situations evoked by self-optimization, the proposed concept uses self-optimization to increase the dependability of the system. In this case, the concept is applied to the active guidance module of an innovative rail-bound vehicle."}],"title":"Towards the Integration of Condition Monitoring in Self-Optimizing Function Modules","user_id":"55222","author":[{"first_name":"Christoph","full_name":"Sondermann-Wölke, Christoph","last_name":"Sondermann-Wölke"},{"first_name":"Walter","full_name":"Sextro, Walter","last_name":"Sextro","id":"21220"}],"department":[{"_id":"151"}],"publication":"Future Computing, Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD '09. Computation World:","keyword":["condition monitoring","mechatronic systems","rail bound vehicle","rail guidance module","self-optimization","self-optimizing function modules","condition monitoring","mechatronics","railway rolling stock","self-adjusting systems"],"status":"public","date_created":"2019-05-13T09:31:52Z","date_updated":"2022-01-06T07:04:19Z","_id":"9742","doi":"10.1109/ComputationWorld.2009.47","year":"2009","citation":{"bibtex":"@inproceedings{Sondermann-Wölke_Sextro_2009, title={Towards the Integration of Condition Monitoring in Self-Optimizing Function Modules}, DOI={10.1109/ComputationWorld.2009.47}, booktitle={Future Computing, Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation World:}, author={Sondermann-Wölke, Christoph and Sextro, Walter}, year={2009}, pages={15–20} }","mla":"Sondermann-Wölke, Christoph, and Walter Sextro. “Towards the Integration of Condition Monitoring in Self-Optimizing Function Modules.” Future Computing, Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation World:, 2009, pp. 15–20, doi:10.1109/ComputationWorld.2009.47.","ama":"Sondermann-Wölke C, Sextro W. Towards the Integration of Condition Monitoring in Self-Optimizing Function Modules. In: Future Computing, Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation World: ; 2009:15-20. doi:10.1109/ComputationWorld.2009.47","apa":"Sondermann-Wölke, C., & Sextro, W. (2009). Towards the Integration of Condition Monitoring in Self-Optimizing Function Modules. In Future Computing, Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation World: (pp. 15–20). https://doi.org/10.1109/ComputationWorld.2009.47","chicago":"Sondermann-Wölke, Christoph, and Walter Sextro. “Towards the Integration of Condition Monitoring in Self-Optimizing Function Modules.” In Future Computing, Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation World:, 15–20, 2009. https://doi.org/10.1109/ComputationWorld.2009.47.","ieee":"C. Sondermann-Wölke and W. Sextro, “Towards the Integration of Condition Monitoring in Self-Optimizing Function Modules,” in Future Computing, Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation World:, 2009, pp. 15–20.","short":"C. Sondermann-Wölke, W. Sextro, in: Future Computing, Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation World:, 2009, pp. 15–20."},"type":"conference","page":"15 -20","language":[{"iso":"eng"}]},{"title":"Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks","department":[{"_id":"15"},{"_id":"286"}],"publication_identifier":{"issn":["1946-4274"]},"publication_status":"published","date_updated":"2022-01-06T07:00:26Z","doi":"10.1557/proc-1181-dd10-02","language":[{"iso":"eng"}],"article_type":"original","abstract":[{"text":"A novel technique to form periodically nanostructured Si surface morphologies based on nanosphere lithography (NSL) and He ion implantation induced swelling is studied in detail. It is shown that by implantation of keV He ions through the nanometric openings of NSL masks regular arrays of hillocks and rings can be created on silicon surfaces. The shape and size of these surface features can be easily controlled by adjusting the ion dose and energy as well as the mask size. Feature heights of more than 100 nm can be obtained, while feature distances are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy measurements of the surface morphology are supplemented by cross-sectional transmission electron microscopy, revealing the inner structure of hillocks to consist of a central cavity surrounded by a hierarchical arrangement of smaller voids. The surface morphologies developed here have the potential to be useful for fixing and separating nano-objects on a silicon surface.","lang":"eng"}],"user_id":"55706","publisher":"Cambridge University Press (CUP)","author":[{"full_name":"Fischer, Frederic J.C.","first_name":"Frederic J.C.","last_name":"Fischer"},{"last_name":"Weinl","full_name":"Weinl, Michael","first_name":"Michael"},{"full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797","last_name":"Lindner"},{"full_name":"Stritzker, Bernd","first_name":"Bernd","last_name":"Stritzker"}],"publication":"MRS Proceedings","volume":1181,"status":"public","date_created":"2018-08-27T13:21:44Z","intvolume":" 1181","_id":"4152","conference":{"start_date":"2009-04-13","name":"MRS Spring Meeting 2009","location":"San Franicsco (USA)","end_date":"2009-04-17"},"article_number":"1181-DD10-02","citation":{"ieee":"F. J. C. Fischer, M. Weinl, J. Lindner, and B. Stritzker, “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks,” MRS Proceedings, vol. 1181, 2009.","short":"F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181 (2009).","mla":"Fischer, Frederic J. C., et al. “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.” MRS Proceedings, vol. 1181, 1181-DD10-02, Cambridge University Press (CUP), 2009, doi:10.1557/proc-1181-dd10-02.","bibtex":"@article{Fischer_Weinl_Lindner_Stritzker_2009, title={Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks}, volume={1181}, DOI={10.1557/proc-1181-dd10-02}, number={1181-DD10-02}, journal={MRS Proceedings}, publisher={Cambridge University Press (CUP)}, author={Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg and Stritzker, Bernd}, year={2009} }","chicago":"Fischer, Frederic J.C., Michael Weinl, Jörg Lindner, and Bernd Stritzker. “Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.” MRS Proceedings 1181 (2009). https://doi.org/10.1557/proc-1181-dd10-02.","apa":"Fischer, F. J. C., Weinl, M., Lindner, J., & Stritzker, B. (2009). Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks. MRS Proceedings, 1181. https://doi.org/10.1557/proc-1181-dd10-02","ama":"Fischer FJC, Weinl M, Lindner J, Stritzker B. Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks. MRS Proceedings. 2009;1181. doi:10.1557/proc-1181-dd10-02"},"type":"journal_article","year":"2009"},{"abstract":[{"text":"We show that an optically driven carrier spin undergoes indirect dephasing even in the absence of spin-reservoir coupling and illustrate it for phonon-induced decoherence during optical spin rotation in a single quantum dot.","lang":"eng"}],"title":"Indirect Dephasing Channel for Optically Controlled Spin in a Single Quantum Dot","user_id":"55706","author":[{"last_name":"Grodecka","first_name":"Anna","full_name":"Grodecka, Anna"},{"first_name":"Pawel","full_name":"Machnikowski, Pawel","last_name":"Machnikowski"},{"full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","first_name":"Jens","id":"158","last_name":"Förstner"}],"publisher":"OSA Technical Digest (CD) (Optical Society of America, 2009)","publication":"Advances in Optical Sciences Congress","keyword":["tet_topic_qd"],"publication_identifier":{"isbn":["9781557528735"]},"publication_status":"published","status":"public","date_created":"2018-08-28T09:22:42Z","date_updated":"2022-01-06T07:00:30Z","_id":"4180","article_number":"NMA1","doi":"10.1364/nlo.2009.nma1","type":"conference","citation":{"short":"A. Grodecka, P. Machnikowski, J. Förstner, in: Advances in Optical Sciences Congress, OSA Technical Digest (CD) (Optical Society of America, 2009), 2009.","ieee":"A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect Dephasing Channel for Optically Controlled Spin in a Single Quantum Dot,” in Advances in Optical Sciences Congress, 2009.","ama":"Grodecka A, Machnikowski P, Förstner J. Indirect Dephasing Channel for Optically Controlled Spin in a Single Quantum Dot. In: Advances in Optical Sciences Congress. OSA Technical Digest (CD) (Optical Society of America, 2009); 2009. doi:10.1364/nlo.2009.nma1","apa":"Grodecka, A., Machnikowski, P., & Förstner, J. (2009). Indirect Dephasing Channel for Optically Controlled Spin in a Single Quantum Dot. In Advances in Optical Sciences Congress. OSA Technical Digest (CD) (Optical Society of America, 2009). https://doi.org/10.1364/nlo.2009.nma1","chicago":"Grodecka, Anna, Pawel Machnikowski, and Jens Förstner. “Indirect Dephasing Channel for Optically Controlled Spin in a Single Quantum Dot.” In Advances in Optical Sciences Congress. OSA Technical Digest (CD) (Optical Society of America, 2009), 2009. https://doi.org/10.1364/nlo.2009.nma1.","mla":"Grodecka, Anna, et al. “Indirect Dephasing Channel for Optically Controlled Spin in a Single Quantum Dot.” Advances in Optical Sciences Congress, NMA1, OSA Technical Digest (CD) (Optical Society of America, 2009), 2009, doi:10.1364/nlo.2009.nma1.","bibtex":"@inproceedings{Grodecka_Machnikowski_Förstner_2009, title={Indirect Dephasing Channel for Optically Controlled Spin in a Single Quantum Dot}, DOI={10.1364/nlo.2009.nma1}, number={NMA1}, booktitle={Advances in Optical Sciences Congress}, publisher={OSA Technical Digest (CD) (Optical Society of America, 2009)}, author={Grodecka, Anna and Machnikowski, Pawel and Förstner, Jens}, year={2009} }"},"year":"2009","language":[{"iso":"eng"}]},{"volume":79,"has_accepted_license":"1","status":"public","date_created":"2018-08-28T09:32:32Z","author":[{"last_name":"Grodecka","full_name":"Grodecka, A.","first_name":"A."},{"first_name":"P.","full_name":"Machnikowski, P.","last_name":"Machnikowski"},{"first_name":"Jens","full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","id":"158"}],"publisher":"American Physical Society (APS)","keyword":["tet_topic_qd"],"file_date_updated":"2018-09-04T19:36:35Z","publication":"Physical Review A","file":[{"relation":"main_file","date_updated":"2018-09-04T19:36:35Z","content_type":"application/pdf","file_id":"4183","creator":"hclaudia","file_size":192120,"access_level":"open_access","file_name":"2009 Grodecka,Machnikowski,Förstner_Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots.pdf","date_created":"2018-08-28T09:33:22Z"}],"ddc":["530"],"user_id":"158","article_type":"original","abstract":[{"lang":"eng","text":"We demonstrate that an optically driven spin of a carrier in a quantum dot undergoes indirect dephasing via\r\nconditional optically induced charge evolution even in the absence of any direct interaction between the spin\r\nand its environment. A generic model for the indirect dephasing with a three-component system with spin,\r\ncharge, and reservoir is proposed. This indirect decoherence channel is studied for the optical spin manipulation\r\nin a quantum dot with a microscopic description of the charge-phonon interaction taking into account its\r\nnon-Markovian nature."}],"type":"journal_article","year":"2009","citation":{"ieee":"A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots,” Physical Review A, vol. 79, no. 4, 2009.","short":"A. Grodecka, P. Machnikowski, J. Förstner, Physical Review A 79 (2009).","mla":"Grodecka, A., et al. “Indirect Spin Dephasing via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” Physical Review A, vol. 79, no. 4, 042331, American Physical Society (APS), 2009, doi:10.1103/physreva.79.042331.","bibtex":"@article{Grodecka_Machnikowski_Förstner_2009, title={Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots}, volume={79}, DOI={10.1103/physreva.79.042331}, number={4042331}, journal={Physical Review A}, publisher={American Physical Society (APS)}, author={Grodecka, A. and Machnikowski, P. and Förstner, Jens}, year={2009} }","chicago":"Grodecka, A., P. Machnikowski, and Jens Förstner. “Indirect Spin Dephasing via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” Physical Review A 79, no. 4 (2009). https://doi.org/10.1103/physreva.79.042331.","apa":"Grodecka, A., Machnikowski, P., & Förstner, J. (2009). Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots. Physical Review A, 79(4). https://doi.org/10.1103/physreva.79.042331","ama":"Grodecka A, Machnikowski P, Förstner J. Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots. Physical Review A. 2009;79(4). doi:10.1103/physreva.79.042331"},"article_number":"042331","issue":"4","_id":"4182","intvolume":" 79","urn":"41826","publication_status":"published","publication_identifier":{"issn":["1050-2947","1094-1622"]},"department":[{"_id":"15"}],"title":"Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots","language":[{"iso":"eng"}],"doi":"10.1103/physreva.79.042331","oa":"1","date_updated":"2022-01-06T07:00:31Z"},{"title":"Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si","publication_identifier":{"issn":["0022-0248"]},"publication_status":"published","department":[{"_id":"15"}],"doi":"10.1016/j.jcrysgro.2009.12.048","date_updated":"2022-01-06T07:00:32Z","language":[{"iso":"eng"}],"ddc":["530"],"user_id":"55706","article_type":"original","abstract":[{"text":"Buried ion beam synthesized 3C-SiC layers were revealed to the surface of silicon wafers to provide lattice matched substrates for GaN thin film epitaxy. Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six- or four-fold crystal symmetry, respectively, were formed. GaN thin film growth was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing to the energy and momentum transfer of the ions – allows to deposit epitaxial thin films at particularly low growth temperatures where both the stable hexagonal and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga rich growth conditions seem to stabilize the formation of the cubic polytype. It is obvious from XTEM studies that the high density of crystal defects in the SiC layer is not transferred onto the growing GaN films and that the crystalline quality of GaN films improves with increasing film thickness. The influence of surface roughness and wettability, interfacial cavities and the nucleation of twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN thin films is discussed.","lang":"eng"}],"volume":312,"has_accepted_license":"1","status":"public","date_created":"2018-08-28T11:50:05Z","publisher":"Elsevier BV","author":[{"last_name":"Häberlen","full_name":"Häberlen, M.","first_name":"M."},{"first_name":"J.W.","full_name":"Gerlach, J.W.","last_name":"Gerlach"},{"last_name":"Murphy","full_name":"Murphy, B.","first_name":"B."},{"id":"20797","last_name":"Lindner","full_name":"Lindner, Jörg","first_name":"Jörg"},{"last_name":"Stritzker","first_name":"B.","full_name":"Stritzker, B."}],"file_date_updated":"2018-08-28T11:50:45Z","publication":"Journal of Crystal Growth","file":[{"access_level":"closed","file_name":"Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA-MBE on SiC-Si.pdf","date_created":"2018-08-28T11:50:45Z","content_type":"application/pdf","date_updated":"2018-08-28T11:50:45Z","success":1,"relation":"main_file","file_size":828431,"creator":"hclaudia","file_id":"4193"}],"issue":"6","_id":"4192","intvolume":" 312","year":"2009","type":"journal_article","citation":{"chicago":"Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth 312, no. 6 (2009): 762–69. https://doi.org/10.1016/j.jcrysgro.2009.12.048.","ama":"Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048","apa":"Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., & Stritzker, B. (2009). Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of Crystal Growth, 312(6), 762–769. https://doi.org/10.1016/j.jcrysgro.2009.12.048","bibtex":"@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si}, volume={312}, DOI={10.1016/j.jcrysgro.2009.12.048}, number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009}, pages={762–769} }","mla":"Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth, vol. 312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:10.1016/j.jcrysgro.2009.12.048.","short":"M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of Crystal Growth 312 (2009) 762–769.","ieee":"M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,” Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009."},"page":"762-769"},{"article_type":"original","abstract":[{"lang":"eng","text":"The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off heterojunction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD). HFETs with normally off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero interface."}],"user_id":"55706","ddc":["530"],"file":[{"relation":"main_file","success":1,"content_type":"application/pdf","date_updated":"2018-08-28T12:16:11Z","creator":"hclaudia","file_id":"4197","file_size":213837,"access_level":"closed","date_created":"2018-08-28T12:16:11Z","file_name":"Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf"}],"publisher":"Wiley","author":[{"first_name":"Elena","full_name":"Tschumak, Elena","last_name":"Tschumak"},{"id":"20797","last_name":"Lindner","full_name":"Lindner, Jörg","first_name":"Jörg"},{"last_name":"Bürger","first_name":"M.","full_name":"Bürger, M."},{"last_name":"Lischka","full_name":"Lischka, K.","first_name":"K."},{"last_name":"Nagasawa","first_name":"H.","full_name":"Nagasawa, H."},{"last_name":"Abe","full_name":"Abe, M.","first_name":"M."},{"first_name":"Donald","full_name":"As, Donald","last_name":"As"}],"file_date_updated":"2018-08-28T12:16:11Z","publication":"physica status solidi (c)","has_accepted_license":"1","status":"public","date_created":"2018-08-28T12:15:20Z","volume":7,"intvolume":" 7","_id":"4196","issue":"1","year":"2009","type":"journal_article","citation":{"apa":"Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., & As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). Physica Status Solidi (C), 7(1), 104–107. https://doi.org/10.1002/pssc.200982615","ama":"Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). physica status solidi (c). 2009;7(1):104-107. doi:10.1002/pssc.200982615","chicago":"Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” Physica Status Solidi (C) 7, no. 1 (2009): 104–7. https://doi.org/10.1002/pssc.200982615.","mla":"Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” Physica Status Solidi (C), vol. 7, no. 1, Wiley, 2009, pp. 104–07, doi:10.1002/pssc.200982615.","bibtex":"@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7}, DOI={10.1002/pssc.200982615}, number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak, Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2009}, pages={104–107} }","short":"E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As, Physica Status Solidi (C) 7 (2009) 104–107.","ieee":"E. Tschumak et al., “Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001),” physica status solidi (c), vol. 7, no. 1, pp. 104–107, 2009."},"page":"104-107","title":"Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)","department":[{"_id":"15"},{"_id":"286"}],"publication_status":"published","publication_identifier":{"issn":["1862-6351","1610-1642"]},"date_updated":"2022-01-06T07:00:33Z","doi":"10.1002/pssc.200982615","language":[{"iso":"eng"}]},{"publication_identifier":{"issn":["1569-4410"]},"publication_status":"published","department":[{"_id":"15"}],"title":"Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime","language":[{"iso":"eng"}],"doi":"10.1016/j.photonics.2009.11.002","date_updated":"2022-01-06T07:00:33Z","has_accepted_license":"1","status":"public","date_created":"2018-08-28T12:19:16Z","volume":8,"file":[{"relation":"main_file","success":1,"content_type":"application/pdf","date_updated":"2018-08-28T12:19:51Z","creator":"hclaudia","file_id":"4199","file_size":310534,"access_level":"closed","date_created":"2018-08-28T12:19:51Z","file_name":"Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime.pdf"}],"publisher":"Elsevier BV","author":[{"last_name":"Üpping","first_name":"J.","full_name":"Üpping, J."},{"last_name":"Miclea","full_name":"Miclea, P.T.","first_name":"P.T."},{"last_name":"Wehrspohn","first_name":"R.B.","full_name":"Wehrspohn, R.B."},{"first_name":"T.","full_name":"Baumgarten, T.","last_name":"Baumgarten"},{"full_name":"Greulich-Weber, Siegmund","first_name":"Siegmund","last_name":"Greulich-Weber"}],"publication":"Photonics and Nanostructures - Fundamentals and Applications","file_date_updated":"2018-08-28T12:19:51Z","user_id":"55706","ddc":["530"],"article_type":"original","abstract":[{"lang":"eng","text":"Three-dimensional (3D) photonic crystal exhibit direction-selective transmission with respect to the center frequency of the stop gap. As a model system, the stop gap of a 3D fcc inverted-opal photonic crystal is studied in the microwave regime in detail using 3D polyamide models. The difference in the direction-selective transmittance between crystals grown in two different high symmetry directions is experimentally shown and compared to numerical simulations."}],"year":"2009","citation":{"ama":"Üpping J, Miclea PT, Wehrspohn RB, Baumgarten T, Greulich-Weber S. Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime. Photonics and Nanostructures - Fundamentals and Applications. 2009;8(2):102-106. doi:10.1016/j.photonics.2009.11.002","apa":"Üpping, J., Miclea, P. T., Wehrspohn, R. B., Baumgarten, T., & Greulich-Weber, S. (2009). Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime. Photonics and Nanostructures - Fundamentals and Applications, 8(2), 102–106. https://doi.org/10.1016/j.photonics.2009.11.002","chicago":"Üpping, J., P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, and Siegmund Greulich-Weber. “Direction-Selective Optical Transmission of 3D Fcc Photonic Crystals in the Microwave Regime.” Photonics and Nanostructures - Fundamentals and Applications 8, no. 2 (2009): 102–6. https://doi.org/10.1016/j.photonics.2009.11.002.","mla":"Üpping, J., et al. “Direction-Selective Optical Transmission of 3D Fcc Photonic Crystals in the Microwave Regime.” Photonics and Nanostructures - Fundamentals and Applications, vol. 8, no. 2, Elsevier BV, 2009, pp. 102–06, doi:10.1016/j.photonics.2009.11.002.","bibtex":"@article{Üpping_Miclea_Wehrspohn_Baumgarten_Greulich-Weber_2009, title={Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime}, volume={8}, DOI={10.1016/j.photonics.2009.11.002}, number={2}, journal={Photonics and Nanostructures - Fundamentals and Applications}, publisher={Elsevier BV}, author={Üpping, J. and Miclea, P.T. and Wehrspohn, R.B. and Baumgarten, T. and Greulich-Weber, Siegmund}, year={2009}, pages={102–106} }","short":"J. Üpping, P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, S. Greulich-Weber, Photonics and Nanostructures - Fundamentals and Applications 8 (2009) 102–106.","ieee":"J. Üpping, P. T. Miclea, R. B. Wehrspohn, T. Baumgarten, and S. Greulich-Weber, “Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime,” Photonics and Nanostructures - Fundamentals and Applications, vol. 8, no. 2, pp. 102–106, 2009."},"type":"journal_article","page":"102-106","issue":"2","_id":"4198","intvolume":" 8"},{"_id":"4219","type":"journal_article","year":"2009","citation":{"short":"S. Greulich-Weber, M. Zöller, B. Friedel, Materials Science Forum 615–617 (2009) 239–242.","ieee":"S. Greulich-Weber, M. Zöller, and B. Friedel, “Textile Solar Cells Based on SiC Microwires,” Materials Science Forum, vol. 615–617, pp. 239–242, 2009.","chicago":"Greulich-Weber, Siegmund, M. Zöller, and B. Friedel. “Textile Solar Cells Based on SiC Microwires.” Materials Science Forum 615–617 (2009): 239–42. https://doi.org/10.4028/www.scientific.net/msf.615-617.239.","ama":"Greulich-Weber S, Zöller M, Friedel B. Textile Solar Cells Based on SiC Microwires. Materials Science Forum. 2009;615-617:239-242. doi:10.4028/www.scientific.net/msf.615-617.239","apa":"Greulich-Weber, S., Zöller, M., & Friedel, B. (2009). Textile Solar Cells Based on SiC Microwires. Materials Science Forum, 615–617, 239–242. https://doi.org/10.4028/www.scientific.net/msf.615-617.239","bibtex":"@article{Greulich-Weber_Zöller_Friedel_2009, title={Textile Solar Cells Based on SiC Microwires}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.239}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber, Siegmund and Zöller, M. and Friedel, B.}, year={2009}, pages={239–242} }","mla":"Greulich-Weber, Siegmund, et al. “Textile Solar Cells Based on SiC Microwires.” Materials Science Forum, vol. 615–617, Trans Tech Publications, 2009, pp. 239–42, doi:10.4028/www.scientific.net/msf.615-617.239."},"page":"239-242","user_id":"55706","article_type":"original","abstract":[{"lang":"eng","text":"The solar cell concept presented here is based on 3C-SiC nano- or microwires and conju¬gated polymers. Therefore the silicon carbide wires are fabricated by a sol-gel route including a car-bothermal reduction step, allowing growth with predetermined uniform diameters between 0.1 and 2μm and lengths up to several centimetres. The design of our photovoltaic device is therein based on a p-i-n structure, well known e.g. from silicon photovoltaics, involving an intrinsic semiconduc¬tor as the central photoactive layer, sandwiched between two complementary doped wide-bandgap semiconductors giving the driving force for charge separation. In our case the 3C-SiC microwires act as the electron acceptor and simultaneously as carrier material for all involved components of the photovoltaic element. "}],"status":"public","date_created":"2018-08-28T13:00:44Z","volume":"615-617","author":[{"full_name":"Greulich-Weber, Siegmund","first_name":"Siegmund","last_name":"Greulich-Weber"},{"full_name":"Zöller, M.","first_name":"M.","last_name":"Zöller"},{"last_name":"Friedel","first_name":"B.","full_name":"Friedel, B."}],"publisher":"Trans Tech Publications","publication":"Materials Science Forum","doi":"10.4028/www.scientific.net/msf.615-617.239","date_updated":"2022-01-06T07:00:38Z","language":[{"iso":"eng"}],"title":"Textile Solar Cells Based on SiC Microwires","publication_status":"published","publication_identifier":{"issn":["1662-9752"]},"department":[{"_id":"15"}]},{"language":[{"iso":"eng"}],"doi":"10.4028/www.scientific.net/msf.615-617.637","date_updated":"2022-01-06T07:00:38Z","publication_identifier":{"issn":["1662-9752"]},"publication_status":"published","department":[{"_id":"15"}],"title":"Bottom-Up Routes to Porous Silicon Carbide","page":"637-640","year":"2009","type":"journal_article","citation":{"short":"S. Greulich-Weber, B. Friedel, Materials Science Forum 615–617 (2009) 637–640.","ieee":"S. Greulich-Weber and B. Friedel, “Bottom-Up Routes to Porous Silicon Carbide,” Materials Science Forum, vol. 615–617, pp. 637–640, 2009.","chicago":"Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous Silicon Carbide.” Materials Science Forum 615–617 (2009): 637–40. https://doi.org/10.4028/www.scientific.net/msf.615-617.637.","ama":"Greulich-Weber S, Friedel B. Bottom-Up Routes to Porous Silicon Carbide. Materials Science Forum. 2009;615-617:637-640. doi:10.4028/www.scientific.net/msf.615-617.637","apa":"Greulich-Weber, S., & Friedel, B. (2009). Bottom-Up Routes to Porous Silicon Carbide. Materials Science Forum, 615–617, 637–640. https://doi.org/10.4028/www.scientific.net/msf.615-617.637","mla":"Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous Silicon Carbide.” Materials Science Forum, vol. 615–617, Trans Tech Publications, 2009, pp. 637–40, doi:10.4028/www.scientific.net/msf.615-617.637.","bibtex":"@article{Greulich-Weber_Friedel_2009, title={Bottom-Up Routes to Porous Silicon Carbide}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.637}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber, Siegmund and Friedel, B.}, year={2009}, pages={637–640} }"},"_id":"4220","volume":"615-617","date_created":"2018-08-28T13:02:05Z","status":"public","publication":"Materials Science Forum","author":[{"last_name":"Greulich-Weber","full_name":"Greulich-Weber, Siegmund","first_name":"Siegmund"},{"first_name":"B.","full_name":"Friedel, B.","last_name":"Friedel"}],"publisher":"Trans Tech Publications","user_id":"55706","abstract":[{"lang":"eng","text":"We report on constructive methods providing a large range of high purity porous SiC products. All methods are based on modified sol-gel processes combined with carbothermal re¬duction. We obtain monodisperse regular pores of well defined diameters by using carbon sphere templates which are removed after SiC infiltration. A different way is a sol-gel based conversion of graphite bodies into SiC, which transfers the porosity from the graphite matrix into the final SiC product. Thus a large variety of porosity features are available, originating either from natural poro¬sity of graphite or from priorly created nano-/ microstructures in the carbonaceous base material. Whereas all our pristine porous sol-gel derived silicon carbide products are semi-insulating, doping is possible, during the growth to modifiy the electrical and optical properties. "}],"article_type":"original"},{"status":"public","has_accepted_license":"1","date_created":"2018-08-28T13:04:23Z","volume":267,"file":[{"file_name":"Regular Silicon Surface Patterns by Local Swelling Induced by He Implantation through Nanosphere Lithography Masks.pdf","date_created":"2018-08-28T13:05:32Z","access_level":"closed","file_id":"4222","creator":"hclaudia","file_size":467219,"success":1,"relation":"main_file","content_type":"application/pdf","date_updated":"2018-08-28T13:05:32Z"}],"author":[{"full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797","last_name":"Lindner"},{"first_name":"C.","full_name":"Seider, C.","last_name":"Seider"},{"first_name":"F.","full_name":"Fischer, F.","last_name":"Fischer"},{"first_name":"M.","full_name":"Weinl, M.","last_name":"Weinl"},{"last_name":"Stritzker","first_name":"B.","full_name":"Stritzker, B."}],"publisher":"Elsevier BV","publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","file_date_updated":"2018-08-28T13:05:32Z","user_id":"55706","ddc":["530"],"article_type":"original","abstract":[{"text":"Nanopatterning of silicon surfaces by means of He+ ion implantation through self-organized colloidal\r\nmasks is reported for the first time. Nanosphere lithography (NSL) masks with mask openings of 46–\r\n230 nm width were deposited on Si(100) wafers. He+ ions were implanted through these masks in order\r\nto induce a local cavity formation and Si surface swelling. The surface morphology and the subsurface\r\nstructure were studied using atomic force microscopy (AFM) and cross-sectional transmission electron\r\nmicroscopy (XTEM), respectively, as a function of mask and implantation parameters. It is demonstrated\r\nthat regular arrays of both individual hillocks and trough-like circular rings can be generated.","lang":"eng"}],"extern":"1","year":"2009","citation":{"bibtex":"@article{Lindner_Seider_Fischer_Weinl_Stritzker_2009, title={Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks}, volume={267}, DOI={10.1016/j.nimb.2009.01.052}, number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lindner, Jörg and Seider, C. and Fischer, F. and Weinl, M. and Stritzker, B.}, year={2009}, pages={1394–1397} }","mla":"Lindner, Jörg, et al. “Regular Surface Patterns by Local Swelling Induced by He Implantation into Silicon through Nanosphere Lithography Masks.” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1394–97, doi:10.1016/j.nimb.2009.01.052.","chicago":"Lindner, Jörg, C. Seider, F. Fischer, M. Weinl, and B. Stritzker. “Regular Surface Patterns by Local Swelling Induced by He Implantation into Silicon through Nanosphere Lithography Masks.” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267, no. 8–9 (2009): 1394–97. https://doi.org/10.1016/j.nimb.2009.01.052.","ama":"Lindner J, Seider C, Fischer F, Weinl M, Stritzker B. Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2009;267(8-9):1394-1397. doi:10.1016/j.nimb.2009.01.052","apa":"Lindner, J., Seider, C., Fischer, F., Weinl, M., & Stritzker, B. (2009). Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267(8–9), 1394–1397. https://doi.org/10.1016/j.nimb.2009.01.052","ieee":"J. Lindner, C. Seider, F. Fischer, M. Weinl, and B. Stritzker, “Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks,” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 267, no. 8–9, pp. 1394–1397, 2009.","short":"J. Lindner, C. Seider, F. Fischer, M. Weinl, B. Stritzker, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267 (2009) 1394–1397."},"type":"journal_article","page":"1394-1397","issue":"8-9","_id":"4221","intvolume":" 267","publication_identifier":{"issn":["0168-583X"]},"publication_status":"published","title":"Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks","language":[{"iso":"eng"}],"doi":"10.1016/j.nimb.2009.01.052","date_updated":"2022-01-06T07:00:38Z"},{"title":"Radiation suppressed oxide growth in the system Ni–Ti–O","publication_status":"published","publication_identifier":{"issn":["0168-583X"]},"date_updated":"2022-01-06T07:00:39Z","doi":"10.1016/j.nimb.2009.01.068","language":[{"iso":"eng"}],"article_type":"original","abstract":[{"lang":"eng","text":"The formation of a thick protective oxide layer on NiTi by plasma immersion ion implantation (PIII) for\r\nmedical devices is an established technology on the laboratory scale. It is shown here that by pre-implantation\r\nwith either 180 keV Ni or low fluence of 190 MeV Au ions, a radiation suppressed growth of the\r\noxide layer of up to 40% is observed. At higher Au fluence and higher PIII temperatures, this changes into\r\nan enhancement of 25–40%. Different amorphisation mechanisms or disorder formation is proposed as\r\nthe underlying effect."}],"extern":"1","user_id":"55706","ddc":["530"],"file":[{"relation":"main_file","success":1,"content_type":"application/pdf","date_updated":"2018-08-28T13:07:49Z","creator":"hclaudia","file_id":"4224","file_size":342798,"access_level":"closed","date_created":"2018-08-28T13:07:49Z","file_name":"Radiation Suppressed Diffusion in the System Ni-Ti-O.pdf"}],"author":[{"last_name":"Lutz","full_name":"Lutz, J.","first_name":"J."},{"last_name":"Gerlach","first_name":"J.W.","full_name":"Gerlach, J.W."},{"last_name":"Lindner","id":"20797","first_name":"Jörg","full_name":"Lindner, Jörg"},{"full_name":"Assmann, W.","first_name":"W.","last_name":"Assmann"},{"first_name":"S.","full_name":"Mändl, S.","last_name":"Mändl"}],"publisher":"Elsevier BV","file_date_updated":"2018-08-28T13:07:49Z","publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","status":"public","has_accepted_license":"1","date_created":"2018-08-28T13:07:17Z","volume":267,"intvolume":" 267","_id":"4223","issue":"8-9","citation":{"short":"J. Lutz, J.W. Gerlach, J. Lindner, W. Assmann, S. Mändl, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267 (2009) 1634–1637.","ieee":"J. Lutz, J. W. Gerlach, J. Lindner, W. Assmann, and S. Mändl, “Radiation suppressed oxide growth in the system Ni–Ti–O,” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 267, no. 8–9, pp. 1634–1637, 2009.","chicago":"Lutz, J., J.W. Gerlach, Jörg Lindner, W. Assmann, and S. Mändl. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267, no. 8–9 (2009): 1634–37. https://doi.org/10.1016/j.nimb.2009.01.068.","apa":"Lutz, J., Gerlach, J. W., Lindner, J., Assmann, W., & Mändl, S. (2009). Radiation suppressed oxide growth in the system Ni–Ti–O. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267(8–9), 1634–1637. https://doi.org/10.1016/j.nimb.2009.01.068","ama":"Lutz J, Gerlach JW, Lindner J, Assmann W, Mändl S. Radiation suppressed oxide growth in the system Ni–Ti–O. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2009;267(8-9):1634-1637. doi:10.1016/j.nimb.2009.01.068","mla":"Lutz, J., et al. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1634–37, doi:10.1016/j.nimb.2009.01.068.","bibtex":"@article{Lutz_Gerlach_Lindner_Assmann_Mändl_2009, title={Radiation suppressed oxide growth in the system Ni–Ti–O}, volume={267}, DOI={10.1016/j.nimb.2009.01.068}, number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lutz, J. and Gerlach, J.W. and Lindner, Jörg and Assmann, W. and Mändl, S.}, year={2009}, pages={1634–1637} }"},"year":"2009","type":"journal_article","page":"1634-1637"},{"department":[{"_id":"15"}],"publication_identifier":{"issn":["1662-9752"]},"publication_status":"published","title":"Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:00:39Z","doi":"10.4028/www.scientific.net/msf.615-617.343","publication":"Materials Science Forum","publisher":"Trans Tech Publications","author":[{"full_name":"Savchenko, D.V.","first_name":"D.V.","last_name":"Savchenko"},{"last_name":"Pöppl","full_name":"Pöppl, Andreas","first_name":"Andreas"},{"last_name":"Kalabukhova","first_name":"Ekaterina N.","full_name":"Kalabukhova, Ekaterina N."},{"full_name":"Greulich-Weber, Siegmund","first_name":"Siegmund","last_name":"Greulich-Weber"},{"last_name":"Rauls","first_name":"Eva","full_name":"Rauls, Eva"},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt"},{"first_name":"Uwe","full_name":"Gerstmann, Uwe","last_name":"Gerstmann"}],"date_created":"2018-08-28T13:09:27Z","status":"public","volume":"615-617","abstract":[{"text":"EPR and ESE in nitrogen doped 4H- and 6H-SiC show besides the well known triplet lines of 14N on quasi-cubic (Nc,k) and hexagonal (Nc,h) sites additional lines (Nx) of comparatively low intensity providing half the hf splitting of Nc,k. Frequently re-interpreted as spin-forbidden lines, arising from Nc,k pairs and triads or resulting from hopping conductivity, only recently the theoretical calculation of the corresponding g-tensors lead to a tentative model of distant NC donor pairs on inequivalent lattice sites which are coupled to S = 1 assuming a fine-structure splitting too small to be observed in the EPR and ESE experiments. In this work, we present ESE nutation measurements confirming S = 1 for the Nx center. Analysing the nutation frequencies in comparison with that of the Nc,k (S = 1/2) spectrum as well as the line width of ESE and EPR spectra we obtain a rough estimate between 5×104 cm-1 and 50×104 cm-1 for the fine-structure splitting demonstrating efficient spin-coupling between nitrogen donors in 4H-SiC.","lang":"eng"}],"article_type":"original","user_id":"55706","page":"343-346","citation":{"short":"D.V. Savchenko, A. Pöppl, E.N. Kalabukhova, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 615–617 (2009) 343–346.","ieee":"D. V. Savchenko et al., “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC,” Materials Science Forum, vol. 615–617, pp. 343–346, 2009.","chicago":"Savchenko, D.V., Andreas Pöppl, Ekaterina N. Kalabukhova, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC.” Materials Science Forum 615–617 (2009): 343–46. https://doi.org/10.4028/www.scientific.net/msf.615-617.343.","apa":"Savchenko, D. V., Pöppl, A., Kalabukhova, E. N., Greulich-Weber, S., Rauls, E., Schmidt, W. G., & Gerstmann, U. (2009). Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC. Materials Science Forum, 615–617, 343–346. https://doi.org/10.4028/www.scientific.net/msf.615-617.343","ama":"Savchenko DV, Pöppl A, Kalabukhova EN, et al. Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC. Materials Science Forum. 2009;615-617:343-346. doi:10.4028/www.scientific.net/msf.615-617.343","bibtex":"@article{Savchenko_Pöppl_Kalabukhova_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.343}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Savchenko, D.V. and Pöppl, Andreas and Kalabukhova, Ekaterina N. and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2009}, pages={343–346} }","mla":"Savchenko, D. V., et al. “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC.” Materials Science Forum, vol. 615–617, Trans Tech Publications, 2009, pp. 343–46, doi:10.4028/www.scientific.net/msf.615-617.343."},"type":"journal_article","year":"2009","_id":"4225"},{"date_updated":"2022-01-06T07:00:39Z","doi":"10.1016/j.physb.2009.08.123","language":[{"iso":"eng"}],"title":"Vacancy clusters created via room temperature irradiation in 6H-SiC","department":[{"_id":"15"}],"publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"_id":"4226","intvolume":" 404","issue":"23-24","citation":{"bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={10.1016/j.physb.2009.08.123}, number={23–24}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, W.G. and Gerstmann, U.}, year={2009}, pages={4742–4744} }","mla":"Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” Physica B: Condensed Matter, vol. 404, no. 23–24, Elsevier BV, 2009, pp. 4742–44, doi:10.1016/j.physb.2009.08.123.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Vacancy clusters created via room temperature irradiation in 6H-SiC. Physica B: Condensed Matter. 2009;404(23-24):4742-4744. doi:10.1016/j.physb.2009.08.123","apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., & Gerstmann, U. (2009). Vacancy clusters created via room temperature irradiation in 6H-SiC. Physica B: Condensed Matter, 404(23–24), 4742–4744. https://doi.org/10.1016/j.physb.2009.08.123","chicago":"Scholle, A., S. Greulich-Weber, E. Rauls, W.G. Schmidt, and U. Gerstmann. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” Physica B: Condensed Matter 404, no. 23–24 (2009): 4742–44. https://doi.org/10.1016/j.physb.2009.08.123.","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Vacancy clusters created via room temperature irradiation in 6H-SiC,” Physica B: Condensed Matter, vol. 404, no. 23–24, pp. 4742–4744, 2009.","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Physica B: Condensed Matter 404 (2009) 4742–4744."},"type":"journal_article","year":"2009","page":"4742-4744","article_type":"original","abstract":[{"text":"In non-annealed 6H-SiC samples that were electron irradiated at low temperature, a new EPR signal due to a\r\nS =1 defect center with exceptionally large zero-field splitting (D= +652\u000210\u00034cm\u00031,E=\u00038\u000210\u00034cm\u00031) has been observed under illumination. A positive sign of D demonstrates that the spin–orbit contribution to the zero-field splitting exceeds by far that of the spin–spin interaction. A principal axis of the fine-structure tilted by 59 1 against the crystal\r\nc -axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin–orbit coupling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.","lang":"eng"}],"user_id":"55706","ddc":["530"],"file":[{"file_size":223477,"file_id":"4227","creator":"hclaudia","date_updated":"2018-08-28T13:12:36Z","content_type":"application/pdf","success":1,"relation":"main_file","date_created":"2018-08-28T13:12:36Z","file_name":"Vacancy clusters created via room temperature irradiation in 6H-SiC.pdf","access_level":"closed"}],"author":[{"last_name":"Scholle","full_name":"Scholle, A.","first_name":"A."},{"last_name":"Greulich-Weber","full_name":"Greulich-Weber, S.","first_name":"S."},{"full_name":"Rauls, E.","first_name":"E.","last_name":"Rauls"},{"full_name":"Schmidt, W.G.","first_name":"W.G.","last_name":"Schmidt"},{"full_name":"Gerstmann, U.","first_name":"U.","last_name":"Gerstmann"}],"publisher":"Elsevier BV","publication":"Physica B: Condensed Matter","file_date_updated":"2018-08-28T13:12:36Z","status":"public","has_accepted_license":"1","date_created":"2018-08-28T13:11:31Z","volume":404},{"user_id":"55706","abstract":[{"text":"The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an AlN nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ~3.5 V at 20 mA from a 500 μm x 500 μm device.","lang":"eng"}],"volume":7231,"date_created":"2018-08-28T13:15:19Z","status":"public","publication":"Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII","publisher":"SPIE","author":[{"last_name":"Zhu","full_name":"Zhu, D.","first_name":"D."},{"last_name":"McAleese","full_name":"McAleese, C.","first_name":"C."},{"full_name":"McLaughlin, K. K.","first_name":"K. K.","last_name":"McLaughlin"},{"full_name":"Häberlen, M.","first_name":"M.","last_name":"Häberlen"},{"full_name":"Salcianu, C. O.","first_name":"C. O.","last_name":"Salcianu"},{"last_name":"Thrush","first_name":"E. J.","full_name":"Thrush, E. J."},{"last_name":"Kappers","full_name":"Kappers, M. J.","first_name":"M. J."},{"last_name":"Phillips","full_name":"Phillips, W. A.","first_name":"W. A."},{"last_name":"Lane","first_name":"P.","full_name":"Lane, P."},{"last_name":"Wallis","first_name":"D. J.","full_name":"Wallis, D. J."},{"last_name":"Martin","first_name":"T.","full_name":"Martin, T."},{"first_name":"M.","full_name":"Astles, M.","last_name":"Astles"},{"first_name":"S.","full_name":"Thomas, S.","last_name":"Thomas"},{"first_name":"A.","full_name":"Pakes, A.","last_name":"Pakes"},{"first_name":"M.","full_name":"Heuken, M.","last_name":"Heuken"},{"last_name":"Humphreys","full_name":"Humphreys, C. J.","first_name":"C. J."}],"article_number":"723118","conference":{"name":"SPIE OPTO: Integrated Optoelectronic Devices, 2009","location":"San Jose, California (USA)"},"intvolume":" 7231","_id":"4228","year":"2009","citation":{"ama":"Zhu D, McAleese C, McLaughlin KK, et al. GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE. In: Streubel KP, Jeon H, Tu L-W, eds. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII. Vol 7231. SPIE; 2009. doi:10.1117/12.814919","apa":"Zhu, D., McAleese, C., McLaughlin, K. K., Häberlen, M., Salcianu, C. O., Thrush, E. J., … Humphreys, C. J. (2009). GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE. In K. P. Streubel, H. Jeon, & L.-W. Tu (Eds.), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII (Vol. 7231). San Jose, California (USA): SPIE. https://doi.org/10.1117/12.814919","chicago":"Zhu, D., C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E. J. 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