@techreport{42745, author = {{Fuchs, Christian}}, publisher = {{Vienna University of Technology}}, title = {{{Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper}}}, year = {{2002}}, } @techreport{42743, author = {{Fuchs, Christian}}, publisher = {{Vienna University of Technology}}, title = {{{Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper}}}, year = {{2002}}, } @inproceedings{42455, author = {{Fuchs, Christian}}, booktitle = {{Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research}}, editor = {{Trappl, Robert}}, pages = {{225--230}}, publisher = {{Austrian Society for Cybernetic Studies}}, title = {{{Social Information and Self-Organisation}}}, year = {{2002}}, } @article{25998, abstract = {{The formation of mesoscopically ordered silica/surfactant composites under acidic synthesis conditions is studied by time-resolved in-situ small-angle X-ray scattering (SAXS) using synchrotron radiation. Benzene is used a an additive which acts as a weak swelling agent although most of the benzene molecules are found to reside near the surfactant/silicate interface region rather than in the micelle cores. With increasing relative amounts of benzene, the curvature of the micellar aggregates decreases, which finally leads to a transition from (hexagonally) rodlike to lamellar; a mechanism for this change in curvature is suggested.}}, author = {{Tiemann, Michael and Goletto, Valérie and Blum, Raphaël and Babonneau, Florence and Amenitsch, Heinz and Lindén, Mika}}, issn = {{0743-7463}}, journal = {{Langmuir}}, pages = {{10053--10057}}, title = {{{In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions}}}, doi = {{10.1021/la026473w}}, year = {{2002}}, } @article{26001, abstract = {{Mesoporous aluminophosphates with a strict ratio of Al∶P = 1∶1 have been synthesised from a single-source molecular precursor.}}, author = {{Tiemann, Michael and Fröba, Michael}}, issn = {{1359-7345}}, journal = {{Chemical Communications}}, pages = {{406--407}}, title = {{{Mesoporous aluminophosphates from a single-source precursor}}}, doi = {{10.1039/b110662g}}, year = {{2002}}, } @article{26000, abstract = {{Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water...}}, author = {{Backlund, Sune and Friman, Rauno and Karlsson, Stefan and Tiemann, Michael}}, journal = {{Tenside Surfactants Detergents}}, number = {{5}}, pages = {{136--140}}, title = {{{Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water}}}, volume = {{39}}, year = {{2002}}, } @article{39920, author = {{Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{633--636}}, publisher = {{Elsevier BV}}, title = {{{Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}}}, doi = {{10.1016/0167-9317(91)90299-s}}, volume = {{15}}, year = {{2002}}, } @article{39915, author = {{Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{211--214}}, publisher = {{Elsevier BV}}, title = {{{Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}}}, doi = {{10.1016/0167-9317(92)90425-q}}, volume = {{19}}, year = {{2002}}, } @article{39916, author = {{Adams, S. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{191--194}}, publisher = {{Elsevier BV}}, title = {{{CMOS compatible micromachining by dry silicon-etching techniques}}}, doi = {{10.1016/0167-9317(92)90420-v}}, volume = {{19}}, year = {{2002}}, } @article{39348, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}}, issn = {{0018-9383}}, journal = {{IEEE Transactions on Electron Devices}}, keywords = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}}, number = {{1}}, pages = {{299--306}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Matching analysis of deposition defined 50-nm MOSFET's}}}, doi = {{10.1109/16.658845}}, volume = {{45}}, year = {{2002}}, } @inproceedings{39923, author = {{Goser, K. and Hilleringmann, Ulrich and Rueckert, U.}}, booktitle = {{[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications}}, publisher = {{IEEE Comput. Soc. Press}}, title = {{{Applications and implementations of neural networks in microelectronics-overview and status}}}, doi = {{10.1109/cmpeur.1991.257442}}, year = {{2002}}, } @article{39889, author = {{Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{413--417}}, publisher = {{Elsevier BV}}, title = {{{12 kV low current cascaded light triggered switch on one silicon chip}}}, doi = {{10.1016/s0167-9317(99)00122-7}}, volume = {{46}}, year = {{2002}}, } @article{39891, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}}, issn = {{0018-9383}}, journal = {{IEEE Transactions on Electron Devices}}, keywords = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}}, number = {{1}}, pages = {{299--306}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Matching analysis of deposition defined 50-nm MOSFET's}}}, doi = {{10.1109/16.658845}}, volume = {{45}}, year = {{2002}}, } @article{39886, author = {{Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}}, issn = {{0038-1101}}, journal = {{Solid-State Electronics}}, keywords = {{Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials}}, number = {{7}}, pages = {{1245--1250}}, publisher = {{Elsevier BV}}, title = {{{Mesoscopic transport phenomena in ultrashort channel MOSFETs}}}, doi = {{10.1016/s0038-1101(99)00060-x}}, volume = {{43}}, year = {{2002}}, } @article{39876, author = {{Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}}, issn = {{0925-9635}}, journal = {{Diamond and Related Materials}}, keywords = {{Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials}}, number = {{3-7}}, pages = {{511--514}}, publisher = {{Elsevier BV}}, title = {{{Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}}}, doi = {{10.1016/s0925-9635(01)00373-9}}, volume = {{10}}, year = {{2002}}, } @article{39877, author = {{Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{569--572}}, publisher = {{Elsevier BV}}, title = {{{A structure definition technique for 25 nm lines of silicon and related materials}}}, doi = {{10.1016/s0167-9317(00)00380-4}}, volume = {{53}}, year = {{2002}}, } @article{39874, author = {{Otterbach, R. and Hilleringmann, Ulrich}}, issn = {{0925-9635}}, journal = {{Diamond and Related Materials}}, keywords = {{Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials}}, number = {{3-6}}, pages = {{841--844}}, publisher = {{Elsevier BV}}, title = {{{Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}}}, doi = {{10.1016/s0925-9635(01)00703-8}}, volume = {{11}}, year = {{2002}}, } @inbook{39875, abstract = {{Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen.}}, author = {{Hilleringmann, Ulrich}}, booktitle = {{Silizium-Halbleitertechnologie}}, isbn = {{978-3-322-94119-0}}, pages = {{131–151}}, publisher = {{Vieweg+Teubner Verlag}}, title = {{{Metallisierung und Kontakte}}}, doi = {{10.1007/978-3-322-94119-0_8}}, year = {{2002}}, } @article{43297, abstract = {{A microscopic many-body theory describing the optical and electronic properties of semiconductors and semiconductor nanostructures is briefly reviewed. At the semiclassical level, the optical response is computed using Maxwell's equations together with the semiconductor Bloch equations which describe the dynamics of the diagonal and the off-diagonal terms of the reduced single-particle density matrix. These equations include the coupling between the semiconductor and the optical field as well as Coulomb many-body interactions among the optically excited carriers. Under quasi-equilibrium conditions, luminescence spectra can be obtained from absorption spectra on the basis of the Kubo–Martin–Schwinger relation for conditions usually limited to the regime of optical gain (lasers). More generally, light emission has to be computed at a fully quantum mechanical level leading to semiconductor luminescence equations.}}, author = {{Meier, Torsten and Koch, S.W. and Hoyer, W. and Kira, M.}}, journal = {{Physica E: Low-Dimensional Systems and Nanostructures}}, number = {{1-2}}, pages = {{45--52}}, publisher = {{North-Holland}}, title = {{{Theory of the optical properties of semiconductor nanostructures}}}, doi = {{10.1016/S1386-9477(02)00358-2}}, volume = {{14}}, year = {{2002}}, } @article{43296, abstract = {{A three-beam configuration is used to investigate the spectrally resolved wave-mixing signal of a ZnSe single quantum well. The spectrum recorded in direction 2 k2–k1 shows coherent oscillations induced by a delayed third pulse with direction k3. Intensity and polarization-dependent measurements indicate that the signal is generated by a combination of four- and six-wave mixing. The origin of the oscillations can be explained qualitatively by a two-level model. The polarization-dependent experimental results require the treatment of many-body correlations and are well explained by microscopic calculations including four-particle correlations up to fifth order in the fields.}}, author = {{Meier, Torsten and Wagner, H.P. and Tranitz, H.-P. and Reichelt, Matthias and Koch, S.W.}}, journal = {{physica status solidi (a)}}, number = {{3}}, pages = {{843--847}}, publisher = {{WILEY‐VCH Verlag Berlin GmbH}}, title = {{{Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations}}}, doi = {{10.1002/1521-396X(200204)190:3<843::AID-PSSA843>3.0.CO;2-B}}, volume = {{190}}, year = {{2002}}, }