@article{39916, author = {{Adams, S. and Hilleringmann, Ulrich and Goser, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{191--194}}, publisher = {{Elsevier BV}}, title = {{{CMOS compatible micromachining by dry silicon-etching techniques}}}, doi = {{10.1016/0167-9317(92)90420-v}}, volume = {{19}}, year = {{2002}}, } @article{39348, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}}, issn = {{0018-9383}}, journal = {{IEEE Transactions on Electron Devices}}, keywords = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}}, number = {{1}}, pages = {{299--306}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Matching analysis of deposition defined 50-nm MOSFET's}}}, doi = {{10.1109/16.658845}}, volume = {{45}}, year = {{2002}}, } @inproceedings{39923, author = {{Goser, K. and Hilleringmann, Ulrich and Rueckert, U.}}, booktitle = {{[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications}}, publisher = {{IEEE Comput. Soc. Press}}, title = {{{Applications and implementations of neural networks in microelectronics-overview and status}}}, doi = {{10.1109/cmpeur.1991.257442}}, year = {{2002}}, } @article{39889, author = {{Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{413--417}}, publisher = {{Elsevier BV}}, title = {{{12 kV low current cascaded light triggered switch on one silicon chip}}}, doi = {{10.1016/s0167-9317(99)00122-7}}, volume = {{46}}, year = {{2002}}, } @article{39891, author = {{Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}}, issn = {{0018-9383}}, journal = {{IEEE Transactions on Electron Devices}}, keywords = {{Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials}}, number = {{1}}, pages = {{299--306}}, publisher = {{Institute of Electrical and Electronics Engineers (IEEE)}}, title = {{{Matching analysis of deposition defined 50-nm MOSFET's}}}, doi = {{10.1109/16.658845}}, volume = {{45}}, year = {{2002}}, } @article{39886, author = {{Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}}, issn = {{0038-1101}}, journal = {{Solid-State Electronics}}, keywords = {{Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials}}, number = {{7}}, pages = {{1245--1250}}, publisher = {{Elsevier BV}}, title = {{{Mesoscopic transport phenomena in ultrashort channel MOSFETs}}}, doi = {{10.1016/s0038-1101(99)00060-x}}, volume = {{43}}, year = {{2002}}, } @article{39876, author = {{Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}}, issn = {{0925-9635}}, journal = {{Diamond and Related Materials}}, keywords = {{Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials}}, number = {{3-7}}, pages = {{511--514}}, publisher = {{Elsevier BV}}, title = {{{Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}}}, doi = {{10.1016/s0925-9635(01)00373-9}}, volume = {{10}}, year = {{2002}}, } @article{39877, author = {{Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}}, issn = {{0167-9317}}, journal = {{Microelectronic Engineering}}, keywords = {{Electrical and Electronic Engineering, Surfaces, Coatings and Films, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials}}, number = {{1-4}}, pages = {{569--572}}, publisher = {{Elsevier BV}}, title = {{{A structure definition technique for 25 nm lines of silicon and related materials}}}, doi = {{10.1016/s0167-9317(00)00380-4}}, volume = {{53}}, year = {{2002}}, } @article{39874, author = {{Otterbach, R. and Hilleringmann, Ulrich}}, issn = {{0925-9635}}, journal = {{Diamond and Related Materials}}, keywords = {{Electrical and Electronic Engineering, Materials Chemistry, Mechanical Engineering, General Chemistry, Electronic, Optical and Magnetic Materials}}, number = {{3-6}}, pages = {{841--844}}, publisher = {{Elsevier BV}}, title = {{{Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}}}, doi = {{10.1016/s0925-9635(01)00703-8}}, volume = {{11}}, year = {{2002}}, } @inbook{39875, abstract = {{Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen.}}, author = {{Hilleringmann, Ulrich}}, booktitle = {{Silizium-Halbleitertechnologie}}, isbn = {{978-3-322-94119-0}}, pages = {{131–151}}, publisher = {{Vieweg+Teubner Verlag}}, title = {{{Metallisierung und Kontakte}}}, doi = {{10.1007/978-3-322-94119-0_8}}, year = {{2002}}, } @article{43297, abstract = {{A microscopic many-body theory describing the optical and electronic properties of semiconductors and semiconductor nanostructures is briefly reviewed. At the semiclassical level, the optical response is computed using Maxwell's equations together with the semiconductor Bloch equations which describe the dynamics of the diagonal and the off-diagonal terms of the reduced single-particle density matrix. These equations include the coupling between the semiconductor and the optical field as well as Coulomb many-body interactions among the optically excited carriers. Under quasi-equilibrium conditions, luminescence spectra can be obtained from absorption spectra on the basis of the Kubo–Martin–Schwinger relation for conditions usually limited to the regime of optical gain (lasers). More generally, light emission has to be computed at a fully quantum mechanical level leading to semiconductor luminescence equations.}}, author = {{Meier, Torsten and Koch, S.W. and Hoyer, W. and Kira, M.}}, journal = {{Physica E: Low-Dimensional Systems and Nanostructures}}, number = {{1-2}}, pages = {{45--52}}, publisher = {{North-Holland}}, title = {{{Theory of the optical properties of semiconductor nanostructures}}}, doi = {{10.1016/S1386-9477(02)00358-2}}, volume = {{14}}, year = {{2002}}, } @article{43296, abstract = {{A three-beam configuration is used to investigate the spectrally resolved wave-mixing signal of a ZnSe single quantum well. The spectrum recorded in direction 2 k2–k1 shows coherent oscillations induced by a delayed third pulse with direction k3. Intensity and polarization-dependent measurements indicate that the signal is generated by a combination of four- and six-wave mixing. The origin of the oscillations can be explained qualitatively by a two-level model. The polarization-dependent experimental results require the treatment of many-body correlations and are well explained by microscopic calculations including four-particle correlations up to fifth order in the fields.}}, author = {{Meier, Torsten and Wagner, H.P. and Tranitz, H.-P. and Reichelt, Matthias and Koch, S.W.}}, journal = {{physica status solidi (a)}}, number = {{3}}, pages = {{843--847}}, publisher = {{WILEY‐VCH Verlag Berlin GmbH}}, title = {{{Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations}}}, doi = {{10.1002/1521-396X(200204)190:3<843::AID-PSSA843>3.0.CO;2-B}}, volume = {{190}}, year = {{2002}}, } @article{43300, abstract = {{The influence of coupling, correlation, and disorder on exciton and biexciton signatures is investigated using coherent excitation spectroscopy. Different biexciton-induced transitions of a single biexciton state are spectrally resolved. One of the transitions is found to be particularly sensitive to disorder. Mixed biexciton resonances, resulting from attractively interacting heavy and light hole exciton states, are identified. The observations are analyzed on the basis of microscopic model calculations.}}, author = {{Meier, Torsten and Finger, E. and Kraft, S.P. and Hofmann, M. and Koch, S.W. and Stolz, W. and Rühle, W.W.}}, journal = {{physica status solidi (b)}}, number = {{1}}, pages = {{424--434}}, publisher = {{WILEY‐VCH Verlag}}, title = {{{Coulomb correlations and biexciton signatures in coherent excitation spectroscopy of semiconductor quantum wells}}}, doi = {{10.1002/1521-3951(200211)234:1<424::AID-PSSB424>3.0.CO;2-V}}, volume = {{234}}, year = {{2002}}, } @inbook{43298, author = {{Meier, Torsten and Reichelt, Matthias and Schlichenmaier, C. and Siggelkow, S. and Thomas, P. and Koch, S.W. and Weiser, S. and Sieh, C.}}, booktitle = {{Germany NIC Series Vol. 9}}, editor = {{Rollnik, Horst and Wolf, Dietrich}}, isbn = {{3-00-009055-X}}, pages = {{ 315--324}}, publisher = {{John von Neumann Institute for Computing}}, title = {{{Many-Body Correlation Effects in Photoexcited Semiconductor Heterostructures}}}, year = {{2002}}, } @inbook{43601, author = {{Schroeter-Wittke, Harald}}, booktitle = {{Glaube gefragt. Ein Credo-Prjekt}}, editor = {{Fermor, Gotthard and Schmidt-Rost, Reinhard}}, pages = {{106--154}}, title = {{{Das Credo der Komponisten. Ein Feature}}}, year = {{2002}}, } @book{43599, editor = {{Prößdorf, Detlev and Schroeter-Wittke, Harald}}, isbn = {{3-87062-512-0}}, pages = {{240}}, publisher = {{CMZ-Verlag}}, title = {{{Rehinische Karnevalstheologie. PROT's Sitzungen und jecke Predigten}}}, year = {{2002}}, } @inproceedings{44191, author = {{Müller, Inez}}, booktitle = {{Erinnerte und erfundene Wirklichkeit}}, location = {{Universität Göteborg}}, pages = {{14}}, publisher = {{iudicium Verlag}}, title = {{{Die Kategorien Zeit und Raum im Roman "Stille Zeile Sechs" von Monika Maron}}}, year = {{2002}}, } @article{43299, abstract = {{A density-matrix theory for absorption changes in semiconductors induced by electron or hole occupations is outlined. Bound and unbound trions are included via four-point correlation functions representing electron–hole pair transitions in the presence of carrier populations. The spectra calculated for semiconductor nanorings show bleaching of the exciton resonance and induced absorption at energies corresponding to transitions to bound and unbound trion states. Without a magnetic field, induced absorption below the exciton line due to bound negatively (positively) charged trions appears when the two electrons (holes) of the trion are in different bands. A magnetic field introduces characteristic modifications of the spectra that can be attributed to the Aharonov–Bohm effect. It may lead to the formation of additional bound magneto-trion states.}}, author = {{Meier, Torsten and Thomas, P. and Koch, S.W. and Maschke, K.}}, journal = {{physica status solidi (b)}}, number = {{1}}, pages = {{283--293}}, publisher = {{WILEY‐VCH Verlag}}, title = {{{Signatures of trions in the optical spectra of doped semiconductor nanorings in a magnetic field}}}, doi = {{10.1002/1521-3951(200211)234:1<283::AID-PSSB283>3.0.CO;2-J}}, volume = {{234}}, year = {{2002}}, } @article{43301, author = {{Meier, Torsten and Koch, S.W.}}, journal = {{Physik Journal}}, number = {{12}}, pages = {{41--48}}, publisher = {{WILEY-VCH}}, title = {{{Optodynamik}}}, volume = {{1}}, year = {{2002}}, } @inproceedings{44535, author = {{Burban, Igor and Drozd, Yu.}}, booktitle = {{ Ukrainian mathematical congress 2001. Algebraic structures and their applications. Proceedings of the third international algebraic conference held in framework of the Ukrainian mathematical congress}}, location = {{Kiev, Ukraine}}, pages = {{201--211}}, publisher = {{Instytut Matematyky NAN Ukrainy}}, title = {{{Derived categories and matrix problems}}}, year = {{2002}}, }