[{"_id":"8737","user_id":"20798","department":[{"_id":"15"},{"_id":"230"}],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Physica E: Low-dimensional Systems and Nanostructures","status":"public","date_updated":"2022-01-06T07:04:00Z","author":[{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"first_name":"Cedrik","full_name":"Meier, Cedrik","id":"20798","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier"},{"full_name":"Seekamp, A","last_name":"Seekamp","first_name":"A"},{"full_name":"Wieck, A.D","last_name":"Wieck","first_name":"A.D"}],"date_created":"2019-03-28T15:14:19Z","volume":13,"title":"Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping","doi":"10.1016/s1386-9477(02)00239-4","publication_status":"published","publication_identifier":{"issn":["1386-9477"]},"year":"2002","citation":{"bibtex":"@article{Reuter_Meier_Seekamp_Wieck_2002, title={Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping}, volume={13}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Meier, Cedrik and Seekamp, A and Wieck, A.D}, year={2002}, pages={938–941} }","mla":"Reuter, Dirk, et al. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 13, 2002, pp. 938–41, doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>.","short":"D. Reuter, C. Meier, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 13 (2002) 938–941.","apa":"Reuter, D., Meier, C., Seekamp, A., &#38; Wieck, A. . (2002). Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>13</i>, 938–941. <a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">https://doi.org/10.1016/s1386-9477(02)00239-4</a>","chicago":"Reuter, Dirk, Cedrik Meier, A Seekamp, and A.D Wieck. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 13 (2002): 938–41. <a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">https://doi.org/10.1016/s1386-9477(02)00239-4</a>.","ieee":"D. Reuter, C. Meier, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 13, pp. 938–941, 2002.","ama":"Reuter D, Meier C, Seekamp A, Wieck A. Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002;13:938-941. doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>"},"page":"938-941","intvolume":"        13"},{"publication_status":"published","publication_identifier":{"issn":["0921-5107"]},"year":"2002","citation":{"ama":"Reuter D, Schafmeister P, Koch J, Schmidt K, Wieck A. Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). <i>Materials Science and Engineering: B</i>. 2002:230-233. doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">10.1016/s0921-5107(01)00871-6</a>","chicago":"Reuter, Dirk, P Schafmeister, J Koch, K Schmidt, and A.D Wieck. “Growth of InAs Quantum Dots on Focussed Ion Beam Implanted GaAs(100).” <i>Materials Science and Engineering: B</i>, 2002, 230–33. <a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">https://doi.org/10.1016/s0921-5107(01)00871-6</a>.","ieee":"D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, and A. . Wieck, “Growth of InAs quantum dots on focussed ion beam implanted GaAs(100),” <i>Materials Science and Engineering: B</i>, pp. 230–233, 2002.","mla":"Reuter, Dirk, et al. “Growth of InAs Quantum Dots on Focussed Ion Beam Implanted GaAs(100).” <i>Materials Science and Engineering: B</i>, 2002, pp. 230–33, doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">10.1016/s0921-5107(01)00871-6</a>.","bibtex":"@article{Reuter_Schafmeister_Koch_Schmidt_Wieck_2002, title={Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)}, DOI={<a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">10.1016/s0921-5107(01)00871-6</a>}, journal={Materials Science and Engineering: B}, author={Reuter, Dirk and Schafmeister, P and Koch, J and Schmidt, K and Wieck, A.D}, year={2002}, pages={230–233} }","short":"D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, A.. Wieck, Materials Science and Engineering: B (2002) 230–233.","apa":"Reuter, D., Schafmeister, P., Koch, J., Schmidt, K., &#38; Wieck, A. . (2002). Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). <i>Materials Science and Engineering: B</i>, 230–233. <a href=\"https://doi.org/10.1016/s0921-5107(01)00871-6\">https://doi.org/10.1016/s0921-5107(01)00871-6</a>"},"page":"230-233","date_updated":"2022-01-06T07:04:00Z","date_created":"2019-03-28T15:15:00Z","author":[{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Schafmeister","full_name":"Schafmeister, P","first_name":"P"},{"last_name":"Koch","full_name":"Koch, J","first_name":"J"},{"last_name":"Schmidt","full_name":"Schmidt, K","first_name":"K"},{"first_name":"A.D","last_name":"Wieck","full_name":"Wieck, A.D"}],"title":"Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)","doi":"10.1016/s0921-5107(01)00871-6","type":"journal_article","publication":"Materials Science and Engineering: B","status":"public","_id":"8738","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"language":[{"iso":"eng"}]},{"status":"public","publication":"Applied Physics Letters","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"8740","page":"1041-1043","citation":{"chicago":"Schaapman, M. R., P. C. M. Christianen, J. C. Maan, Dirk Reuter, and A. D. Wieck. “A Multipurpose Torsional Magnetometer with Optical Detection.” <i>Applied Physics Letters</i>, 2002, 1041–43. <a href=\"https://doi.org/10.1063/1.1498152\">https://doi.org/10.1063/1.1498152</a>.","ieee":"M. R. Schaapman, P. C. M. Christianen, J. C. Maan, D. Reuter, and A. D. Wieck, “A multipurpose torsional magnetometer with optical detection,” <i>Applied Physics Letters</i>, pp. 1041–1043, 2002.","ama":"Schaapman MR, Christianen PCM, Maan JC, Reuter D, Wieck AD. A multipurpose torsional magnetometer with optical detection. <i>Applied Physics Letters</i>. 2002:1041-1043. doi:<a href=\"https://doi.org/10.1063/1.1498152\">10.1063/1.1498152</a>","short":"M.R. Schaapman, P.C.M. Christianen, J.C. Maan, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 1041–1043.","bibtex":"@article{Schaapman_Christianen_Maan_Reuter_Wieck_2002, title={A multipurpose torsional magnetometer with optical detection}, DOI={<a href=\"https://doi.org/10.1063/1.1498152\">10.1063/1.1498152</a>}, journal={Applied Physics Letters}, author={Schaapman, M. R. and Christianen, P. C. M. and Maan, J. C. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={1041–1043} }","mla":"Schaapman, M. R., et al. “A Multipurpose Torsional Magnetometer with Optical Detection.” <i>Applied Physics Letters</i>, 2002, pp. 1041–43, doi:<a href=\"https://doi.org/10.1063/1.1498152\">10.1063/1.1498152</a>.","apa":"Schaapman, M. R., Christianen, P. C. M., Maan, J. C., Reuter, D., &#38; Wieck, A. D. (2002). A multipurpose torsional magnetometer with optical detection. <i>Applied Physics Letters</i>, 1041–1043. <a href=\"https://doi.org/10.1063/1.1498152\">https://doi.org/10.1063/1.1498152</a>"},"year":"2002","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","doi":"10.1063/1.1498152","title":"A multipurpose torsional magnetometer with optical detection","date_created":"2019-03-28T15:17:30Z","author":[{"first_name":"M. R.","last_name":"Schaapman","full_name":"Schaapman, M. R."},{"first_name":"P. C. M.","last_name":"Christianen","full_name":"Christianen, P. C. M."},{"first_name":"J. C.","last_name":"Maan","full_name":"Maan, J. C."},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"date_updated":"2022-01-06T07:04:00Z"},{"citation":{"ama":"Schmidt KH, Bock C, Kunze U, et al. Electronic structure of InAs self-assembled quantum dots. <i>Materials Science and Engineering: B</i>. 2002:238-242. doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">10.1016/s0921-5107(01)00873-x</a>","ieee":"K. H. Schmidt <i>et al.</i>, “Electronic structure of InAs self-assembled quantum dots,” <i>Materials Science and Engineering: B</i>, pp. 238–242, 2002.","chicago":"Schmidt, K.H., C. Bock, U. Kunze, V.V. Khorenko, S. Malzer, G.H. Döhler, M. Versen, Dirk Reuter, and A.D. Wieck. “Electronic Structure of InAs Self-Assembled Quantum Dots.” <i>Materials Science and Engineering: B</i>, 2002, 238–42. <a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">https://doi.org/10.1016/s0921-5107(01)00873-x</a>.","short":"K.H. Schmidt, C. Bock, U. Kunze, V.V. Khorenko, S. Malzer, G.H. Döhler, M. Versen, D. Reuter, A.D. Wieck, Materials Science and Engineering: B (2002) 238–242.","bibtex":"@article{Schmidt_Bock_Kunze_Khorenko_Malzer_Döhler_Versen_Reuter_Wieck_2002, title={Electronic structure of InAs self-assembled quantum dots}, DOI={<a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">10.1016/s0921-5107(01)00873-x</a>}, journal={Materials Science and Engineering: B}, author={Schmidt, K.H. and Bock, C. and Kunze, U. and Khorenko, V.V. and Malzer, S. and Döhler, G.H. and Versen, M. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={238–242} }","mla":"Schmidt, K. H., et al. “Electronic Structure of InAs Self-Assembled Quantum Dots.” <i>Materials Science and Engineering: B</i>, 2002, pp. 238–42, doi:<a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">10.1016/s0921-5107(01)00873-x</a>.","apa":"Schmidt, K. H., Bock, C., Kunze, U., Khorenko, V. V., Malzer, S., Döhler, G. H., … Wieck, A. D. (2002). Electronic structure of InAs self-assembled quantum dots. <i>Materials Science and Engineering: B</i>, 238–242. <a href=\"https://doi.org/10.1016/s0921-5107(01)00873-x\">https://doi.org/10.1016/s0921-5107(01)00873-x</a>"},"page":"238-242","year":"2002","publication_status":"published","publication_identifier":{"issn":["0921-5107"]},"doi":"10.1016/s0921-5107(01)00873-x","title":"Electronic structure of InAs self-assembled quantum dots","date_created":"2019-03-28T15:18:09Z","author":[{"first_name":"K.H.","full_name":"Schmidt, K.H.","last_name":"Schmidt"},{"last_name":"Bock","full_name":"Bock, C.","first_name":"C."},{"full_name":"Kunze, U.","last_name":"Kunze","first_name":"U."},{"first_name":"V.V.","last_name":"Khorenko","full_name":"Khorenko, V.V."},{"first_name":"S.","last_name":"Malzer","full_name":"Malzer, S."},{"first_name":"G.H.","last_name":"Döhler","full_name":"Döhler, G.H."},{"full_name":"Versen, M.","last_name":"Versen","first_name":"M."},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."}],"date_updated":"2022-01-06T07:04:00Z","status":"public","type":"journal_article","publication":"Materials Science and Engineering: B","language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8741"},{"status":"public","type":"journal_article","publication":"Physica E: Low-dimensional Systems and Nanostructures","language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8742","citation":{"apa":"Schulze-Wischeler, F., Zeitler, U., Hohls, F., Haug, R. J., Reuter, D., &#38; Wieck, A. D. (2002). Phonon excitation of a two-dimensional electron system around ν=1. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 474–477. <a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">https://doi.org/10.1016/s1386-9477(01)00342-3</a>","short":"F. Schulze-Wischeler, U. Zeitler, F. Hohls, R.J. Haug, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2002) 474–477.","bibtex":"@article{Schulze-Wischeler_Zeitler_Hohls_Haug_Reuter_Wieck_2002, title={Phonon excitation of a two-dimensional electron system around ν=1}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">10.1016/s1386-9477(01)00342-3</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schulze-Wischeler, F. and Zeitler, U. and Hohls, F. and Haug, R.J. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={474–477} }","mla":"Schulze-Wischeler, F., et al. “Phonon Excitation of a Two-Dimensional Electron System around Ν=1.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 474–77, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">10.1016/s1386-9477(01)00342-3</a>.","chicago":"Schulze-Wischeler, F., U. Zeitler, F. Hohls, R.J. Haug, Dirk Reuter, and A.D. Wieck. “Phonon Excitation of a Two-Dimensional Electron System around Ν=1.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 474–77. <a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">https://doi.org/10.1016/s1386-9477(01)00342-3</a>.","ieee":"F. Schulze-Wischeler, U. Zeitler, F. Hohls, R. J. Haug, D. Reuter, and A. D. Wieck, “Phonon excitation of a two-dimensional electron system around ν=1,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 474–477, 2002.","ama":"Schulze-Wischeler F, Zeitler U, Hohls F, Haug RJ, Reuter D, Wieck AD. Phonon excitation of a two-dimensional electron system around ν=1. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:474-477. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">10.1016/s1386-9477(01)00342-3</a>"},"page":"474-477","year":"2002","publication_status":"published","publication_identifier":{"issn":["1386-9477"]},"doi":"10.1016/s1386-9477(01)00342-3","title":"Phonon excitation of a two-dimensional electron system around ν=1","author":[{"first_name":"F.","full_name":"Schulze-Wischeler, F.","last_name":"Schulze-Wischeler"},{"first_name":"U.","full_name":"Zeitler, U.","last_name":"Zeitler"},{"last_name":"Hohls","full_name":"Hohls, F.","first_name":"F."},{"first_name":"R.J.","last_name":"Haug","full_name":"Haug, R.J."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A.D.","first_name":"A.D."}],"date_created":"2019-03-28T15:18:43Z","date_updated":"2022-01-06T07:04:00Z"},{"doi":"10.1016/s1386-9477(01)00506-9","title":"Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam","author":[{"last_name":"Vitzethum","full_name":"Vitzethum, M.","first_name":"M."},{"first_name":"R.","full_name":"Schmidt, R.","last_name":"Schmidt"},{"first_name":"P.","last_name":"Kiesel","full_name":"Kiesel, P."},{"last_name":"Schafmeister","full_name":"Schafmeister, P.","first_name":"P."},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"first_name":"A.D.","full_name":"Wieck, A.D.","last_name":"Wieck"},{"full_name":"Döhler, G.H.","last_name":"Döhler","first_name":"G.H."}],"date_created":"2019-03-28T15:19:16Z","date_updated":"2022-01-06T07:04:00Z","page":"143-146","citation":{"chicago":"Vitzethum, M., R. Schmidt, P. Kiesel, P. Schafmeister, Dirk Reuter, A.D. Wieck, and G.H. Döhler. “Quantum Dot Micro-LEDs for the Study of Few-Dot Electroluminescence, Fabricated by Focussed Ion Beam.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 143–46. <a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">https://doi.org/10.1016/s1386-9477(01)00506-9</a>.","ieee":"M. Vitzethum <i>et al.</i>, “Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 143–146, 2002.","ama":"Vitzethum M, Schmidt R, Kiesel P, et al. Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:143-146. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">10.1016/s1386-9477(01)00506-9</a>","mla":"Vitzethum, M., et al. “Quantum Dot Micro-LEDs for the Study of Few-Dot Electroluminescence, Fabricated by Focussed Ion Beam.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 143–46, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">10.1016/s1386-9477(01)00506-9</a>.","bibtex":"@article{Vitzethum_Schmidt_Kiesel_Schafmeister_Reuter_Wieck_Döhler_2002, title={Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">10.1016/s1386-9477(01)00506-9</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Vitzethum, M. and Schmidt, R. and Kiesel, P. and Schafmeister, P. and Reuter, Dirk and Wieck, A.D. and Döhler, G.H.}, year={2002}, pages={143–146} }","short":"M. Vitzethum, R. Schmidt, P. Kiesel, P. Schafmeister, D. Reuter, A.D. Wieck, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2002) 143–146.","apa":"Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Reuter, D., Wieck, A. D., &#38; Döhler, G. H. (2002). Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 143–146. <a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">https://doi.org/10.1016/s1386-9477(01)00506-9</a>"},"year":"2002","publication_identifier":{"issn":["1386-9477"]},"publication_status":"published","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"8743","status":"public","publication":"Physica E: Low-dimensional Systems and Nanostructures","type":"journal_article"},{"publication_identifier":{"issn":["1386-9477"]},"publication_status":"published","page":"570-573","citation":{"ieee":"M. Vitzethum <i>et al.</i>, “A novel photoconductive detector for single photon detection,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 570–573, 2002.","chicago":"Vitzethum, M., R. Schmidt, P. Kiesel, P. Schafmeister, J. Koch, Dirk Reuter, A.D. Wieck, and G.H. Döhler. “A Novel Photoconductive Detector for Single Photon Detection.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 570–73. <a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">https://doi.org/10.1016/s1386-9477(01)00475-1</a>.","ama":"Vitzethum M, Schmidt R, Kiesel P, et al. A novel photoconductive detector for single photon detection. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:570-573. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">10.1016/s1386-9477(01)00475-1</a>","mla":"Vitzethum, M., et al. “A Novel Photoconductive Detector for Single Photon Detection.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 570–73, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">10.1016/s1386-9477(01)00475-1</a>.","bibtex":"@article{Vitzethum_Schmidt_Kiesel_Schafmeister_Koch_Reuter_Wieck_Döhler_2002, title={A novel photoconductive detector for single photon detection}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">10.1016/s1386-9477(01)00475-1</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Vitzethum, M. and Schmidt, R. and Kiesel, P. and Schafmeister, P. and Koch, J. and Reuter, Dirk and Wieck, A.D. and Döhler, G.H.}, year={2002}, pages={570–573} }","short":"M. Vitzethum, R. Schmidt, P. Kiesel, P. Schafmeister, J. Koch, D. Reuter, A.D. Wieck, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2002) 570–573.","apa":"Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Koch, J., Reuter, D., … Döhler, G. H. (2002). A novel photoconductive detector for single photon detection. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 570–573. <a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">https://doi.org/10.1016/s1386-9477(01)00475-1</a>"},"year":"2002","date_created":"2019-03-28T15:19:48Z","author":[{"first_name":"M.","full_name":"Vitzethum, M.","last_name":"Vitzethum"},{"full_name":"Schmidt, R.","last_name":"Schmidt","first_name":"R."},{"first_name":"P.","last_name":"Kiesel","full_name":"Kiesel, P."},{"full_name":"Schafmeister, P.","last_name":"Schafmeister","first_name":"P."},{"full_name":"Koch, J.","last_name":"Koch","first_name":"J."},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."},{"first_name":"G.H.","last_name":"Döhler","full_name":"Döhler, G.H."}],"date_updated":"2022-01-06T07:04:00Z","doi":"10.1016/s1386-9477(01)00475-1","title":"A novel photoconductive detector for single photon detection","publication":"Physica E: Low-dimensional Systems and Nanostructures","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"8744","language":[{"iso":"eng"}]},{"page":"669-673","citation":{"mla":"Versen, M., et al. “Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential.” <i>Physica Status Solidi (B)</i>, 2002, pp. 669–73, doi:<a href=\"https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h\">10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>.","short":"M. Versen, K.H. Schmidt, C. Bock, D. Reuter, A.D. Wieck, U. Kunze, Physica Status Solidi (B) (2002) 669–673.","bibtex":"@article{Versen_Schmidt_Bock_Reuter_Wieck_Kunze_2002, title={Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential}, DOI={<a href=\"https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h\">10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>}, journal={physica status solidi (b)}, author={Versen, M. and Schmidt, K.H. and Bock, C. and Reuter, Dirk and Wieck, A.D. and Kunze, U.}, year={2002}, pages={669–673} }","apa":"Versen, M., Schmidt, K. H., Bock, C., Reuter, D., Wieck, A. D., &#38; Kunze, U. (2002). Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential. <i>Physica Status Solidi (B)</i>, 669–673. <a href=\"https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h\">https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>","ama":"Versen M, Schmidt KH, Bock C, Reuter D, Wieck AD, Kunze U. Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential. <i>physica status solidi (b)</i>. 2002:669-673. doi:<a href=\"https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h\">10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>","ieee":"M. Versen, K. H. Schmidt, C. Bock, D. Reuter, A. D. Wieck, and U. Kunze, “Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential,” <i>physica status solidi (b)</i>, pp. 669–673, 2002.","chicago":"Versen, M., K.H. Schmidt, C. Bock, Dirk Reuter, A.D. Wieck, and U. Kunze. “Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential.” <i>Physica Status Solidi (B)</i>, 2002, 669–73. <a href=\"https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h\">https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>."},"year":"2002","publication_identifier":{"issn":["0370-1972","1521-3951"]},"publication_status":"published","doi":"10.1002/(sici)1521-3951(200104)224:3<669::aid-pssb669>3.3.co;2-h","title":"Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential","date_created":"2019-03-29T11:22:52Z","author":[{"first_name":"M.","last_name":"Versen","full_name":"Versen, M."},{"first_name":"K.H.","last_name":"Schmidt","full_name":"Schmidt, K.H."},{"last_name":"Bock","full_name":"Bock, C.","first_name":"C."},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A.D.","first_name":"A.D."},{"full_name":"Kunze, U.","last_name":"Kunze","first_name":"U."}],"date_updated":"2022-01-06T07:04:00Z","status":"public","publication":"physica status solidi (b)","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"8745"},{"citation":{"ama":"Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. <i>Applied Physics Letters</i>. 2002:377-379. doi:<a href=\"https://doi.org/10.1063/1.1386618\">10.1063/1.1386618</a>","ieee":"D. Reuter, C. Meier, M. A. S. Álvarez, and A. D. Wieck, “Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices,” <i>Applied Physics Letters</i>, pp. 377–379, 2002.","chicago":"Reuter, Dirk, C. Meier, M. A. Serrano Álvarez, and A. D. Wieck. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.” <i>Applied Physics Letters</i>, 2002, 377–79. <a href=\"https://doi.org/10.1063/1.1386618\">https://doi.org/10.1063/1.1386618</a>.","apa":"Reuter, D., Meier, C., Álvarez, M. A. S., &#38; Wieck, A. D. (2002). Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. <i>Applied Physics Letters</i>, 377–379. <a href=\"https://doi.org/10.1063/1.1386618\">https://doi.org/10.1063/1.1386618</a>","mla":"Reuter, Dirk, et al. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.” <i>Applied Physics Letters</i>, 2002, pp. 377–79, doi:<a href=\"https://doi.org/10.1063/1.1386618\">10.1063/1.1386618</a>.","bibtex":"@article{Reuter_Meier_Álvarez_Wieck_2002, title={Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices}, DOI={<a href=\"https://doi.org/10.1063/1.1386618\">10.1063/1.1386618</a>}, journal={Applied Physics Letters}, author={Reuter, Dirk and Meier, C. and Álvarez, M. A. Serrano and Wieck, A. D.}, year={2002}, pages={377–379} }","short":"D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters (2002) 377–379."},"page":"377-379","year":"2002","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.1386618","title":"Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices","date_created":"2019-03-29T11:23:32Z","author":[{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Meier, C.","last_name":"Meier","first_name":"C."},{"first_name":"M. A. Serrano","full_name":"Álvarez, M. A. Serrano","last_name":"Álvarez"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"date_updated":"2022-01-06T07:04:00Z","status":"public","type":"journal_article","publication":"Applied Physics Letters","language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8746"},{"type":"journal_article","publication":"Semiconductor Science and Technology","status":"public","_id":"8747","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0268-1242","1361-6641"]},"year":"2002","citation":{"apa":"Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>, 603–607. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>","mla":"Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, pp. 603–07, doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>.","short":"D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.","bibtex":"@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }","ama":"Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>. 2002:603-607. doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>","ieee":"D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.","chicago":"Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>."},"page":"603-607","date_updated":"2022-01-06T07:04:00Z","author":[{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"full_name":"Kähler, D","last_name":"Kähler","first_name":"D"},{"first_name":"U","full_name":"Kunze, U","last_name":"Kunze"},{"full_name":"Wieck, A D","last_name":"Wieck","first_name":"A D"}],"date_created":"2019-03-29T11:24:11Z","title":"Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography","doi":"10.1088/0268-1242/16/7/314"},{"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"8763","language":[{"iso":"eng"}],"publication":"Journal of Applied Physics","type":"journal_article","status":"public","author":[{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"first_name":"M.","full_name":"Versen, M.","last_name":"Versen"},{"last_name":"Schneider","full_name":"Schneider, M. D.","first_name":"M. D."},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"date_created":"2019-04-01T07:33:21Z","date_updated":"2022-01-06T07:04:00Z","doi":"10.1063/1.373660","title":"Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities","publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","page":"321-325","citation":{"ama":"Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. <i>Journal of Applied Physics</i>. 2002:321-325. doi:<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>","ieee":"D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities,” <i>Journal of Applied Physics</i>, pp. 321–325, 2002.","chicago":"Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” <i>Journal of Applied Physics</i>, 2002, 321–25. <a href=\"https://doi.org/10.1063/1.373660\">https://doi.org/10.1063/1.373660</a>.","mla":"Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron Densities.” <i>Journal of Applied Physics</i>, 2002, pp. 321–25, doi:<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>.","bibtex":"@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities}, DOI={<a href=\"https://doi.org/10.1063/1.373660\">10.1063/1.373660</a>}, journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }","short":"D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics (2002) 321–325.","apa":"Reuter, D., Versen, M., Schneider, M. D., &#38; Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities. <i>Journal of Applied Physics</i>, 321–325. <a href=\"https://doi.org/10.1063/1.373660\">https://doi.org/10.1063/1.373660</a>"},"year":"2002"},{"author":[{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"last_name":"Kähler","full_name":"Kähler, D","first_name":"D"},{"last_name":"Kunze","full_name":"Kunze, U","first_name":"U"},{"first_name":"A D","full_name":"Wieck, A D","last_name":"Wieck"}],"date_created":"2019-04-01T07:56:38Z","date_updated":"2022-01-06T07:04:00Z","doi":"10.1088/0268-1242/16/7/314","title":"Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography","publication_status":"published","publication_identifier":{"issn":["0268-1242","1361-6641"]},"citation":{"ieee":"D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.","chicago":"Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>.","ama":"Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>. 2002:603-607. doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>","apa":"Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor Science and Technology</i>, 603–607. <a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">https://doi.org/10.1088/0268-1242/16/7/314</a>","mla":"Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>, 2002, pp. 603–07, doi:<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>.","bibtex":"@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/16/7/314\">10.1088/0268-1242/16/7/314</a>}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }","short":"D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607."},"page":"603-607","year":"2002","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8768","language":[{"iso":"eng"}],"type":"journal_article","publication":"Semiconductor Science and Technology","status":"public"},{"publication_status":"published","publication_identifier":{"issn":["0031-9007","1079-7114"]},"citation":{"apa":"Gershenson, M. E., Khavin, Y. B., Reuter, D., Schafmeister, P., &#38; Wieck, A. D. (2002). Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length. <i>Physical Review Letters</i>, 1718–1721. <a href=\"https://doi.org/10.1103/physrevlett.85.1718\">https://doi.org/10.1103/physrevlett.85.1718</a>","bibtex":"@article{Gershenson_Khavin_Reuter_Schafmeister_Wieck_2002, title={Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length}, DOI={<a href=\"https://doi.org/10.1103/physrevlett.85.1718\">10.1103/physrevlett.85.1718</a>}, journal={Physical Review Letters}, author={Gershenson, M. E. and Khavin, Yu. B. and Reuter, Dirk and Schafmeister, P. and Wieck, A. D.}, year={2002}, pages={1718–1721} }","mla":"Gershenson, M. E., et al. “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length.” <i>Physical Review Letters</i>, 2002, pp. 1718–21, doi:<a href=\"https://doi.org/10.1103/physrevlett.85.1718\">10.1103/physrevlett.85.1718</a>.","short":"M.E. Gershenson, Y.B. Khavin, D. Reuter, P. Schafmeister, A.D. Wieck, Physical Review Letters (2002) 1718–1721.","ieee":"M. E. Gershenson, Y. B. Khavin, D. Reuter, P. Schafmeister, and A. D. Wieck, “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length,” <i>Physical Review Letters</i>, pp. 1718–1721, 2002.","chicago":"Gershenson, M. E., Yu. B. Khavin, Dirk Reuter, P. Schafmeister, and A. D. Wieck. “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length.” <i>Physical Review Letters</i>, 2002, 1718–21. <a href=\"https://doi.org/10.1103/physrevlett.85.1718\">https://doi.org/10.1103/physrevlett.85.1718</a>.","ama":"Gershenson ME, Khavin YB, Reuter D, Schafmeister P, Wieck AD. Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length. <i>Physical Review Letters</i>. 2002:1718-1721. doi:<a href=\"https://doi.org/10.1103/physrevlett.85.1718\">10.1103/physrevlett.85.1718</a>"},"page":"1718-1721","year":"2002","author":[{"full_name":"Gershenson, M. E.","last_name":"Gershenson","first_name":"M. E."},{"full_name":"Khavin, Yu. B.","last_name":"Khavin","first_name":"Yu. B."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"P.","full_name":"Schafmeister, P.","last_name":"Schafmeister"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"}],"date_created":"2019-04-01T08:07:13Z","date_updated":"2022-01-06T07:04:00Z","doi":"10.1103/physrevlett.85.1718","title":"Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length","type":"journal_article","publication":"Physical Review Letters","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8771","language":[{"iso":"eng"}]},{"status":"public","publication":"Ultramicroscopy","type":"journal_article","language":[{"iso":"eng"}],"_id":"8772","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","year":"2002","page":"159-163","citation":{"ieee":"M. Versen, B. Klehn, U. Kunze, D. Reuter, and A. . Wieck, “Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope,” <i>Ultramicroscopy</i>, pp. 159–163, 2002.","chicago":"Versen, M, B Klehn, U Kunze, Dirk Reuter, and A.D Wieck. “Nanoscale Devices Fabricated by Direct Machining of GaAs with an Atomic Force Microscope.” <i>Ultramicroscopy</i>, 2002, 159–63. <a href=\"https://doi.org/10.1016/s0304-3991(99)00127-8\">https://doi.org/10.1016/s0304-3991(99)00127-8</a>.","ama":"Versen M, Klehn B, Kunze U, Reuter D, Wieck A. Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope. <i>Ultramicroscopy</i>. 2002:159-163. doi:<a href=\"https://doi.org/10.1016/s0304-3991(99)00127-8\">10.1016/s0304-3991(99)00127-8</a>","mla":"Versen, M., et al. “Nanoscale Devices Fabricated by Direct Machining of GaAs with an Atomic Force Microscope.” <i>Ultramicroscopy</i>, 2002, pp. 159–63, doi:<a href=\"https://doi.org/10.1016/s0304-3991(99)00127-8\">10.1016/s0304-3991(99)00127-8</a>.","short":"M. Versen, B. Klehn, U. Kunze, D. Reuter, A.. Wieck, Ultramicroscopy (2002) 159–163.","bibtex":"@article{Versen_Klehn_Kunze_Reuter_Wieck_2002, title={Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope}, DOI={<a href=\"https://doi.org/10.1016/s0304-3991(99)00127-8\">10.1016/s0304-3991(99)00127-8</a>}, journal={Ultramicroscopy}, author={Versen, M and Klehn, B and Kunze, U and Reuter, Dirk and Wieck, A.D}, year={2002}, pages={159–163} }","apa":"Versen, M., Klehn, B., Kunze, U., Reuter, D., &#38; Wieck, A. . (2002). Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope. <i>Ultramicroscopy</i>, 159–163. <a href=\"https://doi.org/10.1016/s0304-3991(99)00127-8\">https://doi.org/10.1016/s0304-3991(99)00127-8</a>"},"publication_identifier":{"issn":["0304-3991"]},"publication_status":"published","title":"Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope","doi":"10.1016/s0304-3991(99)00127-8","date_updated":"2022-01-06T07:04:00Z","author":[{"first_name":"M","full_name":"Versen, M","last_name":"Versen"},{"first_name":"B","full_name":"Klehn, B","last_name":"Klehn"},{"first_name":"U","full_name":"Kunze, U","last_name":"Kunze"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A.D","first_name":"A.D"}],"date_created":"2019-04-01T08:09:48Z"},{"date_created":"2019-04-01T08:12:28Z","author":[{"first_name":"S","full_name":"Skaberna, S","last_name":"Skaberna"},{"last_name":"Versen","full_name":"Versen, M","first_name":"M"},{"full_name":"Klehn, B","last_name":"Klehn","first_name":"B"},{"last_name":"Kunze","full_name":"Kunze, U","first_name":"U"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"first_name":"A","last_name":"D. Wieck","full_name":"D. Wieck, A"}],"date_updated":"2022-01-06T07:04:00Z","doi":"10.1016/s0304-3991(99)00126-6","title":"Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching","publication_status":"published","publication_identifier":{"issn":["0304-3991"]},"citation":{"ieee":"S. Skaberna, M. Versen, B. Klehn, U. Kunze, D. Reuter, and A. D. Wieck, “Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching,” <i>Ultramicroscopy</i>, pp. 153–157, 2002.","chicago":"Skaberna, S, M Versen, B Klehn, U Kunze, Dirk Reuter, and A D. Wieck. “Fabrication of a Quantum Point Contact by the Dynamic Plowing Technique and Wet-Chemical Etching.” <i>Ultramicroscopy</i>, 2002, 153–57. <a href=\"https://doi.org/10.1016/s0304-3991(99)00126-6\">https://doi.org/10.1016/s0304-3991(99)00126-6</a>.","ama":"Skaberna S, Versen M, Klehn B, Kunze U, Reuter D, D. Wieck A. Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching. <i>Ultramicroscopy</i>. 2002:153-157. doi:<a href=\"https://doi.org/10.1016/s0304-3991(99)00126-6\">10.1016/s0304-3991(99)00126-6</a>","bibtex":"@article{Skaberna_Versen_Klehn_Kunze_Reuter_D. Wieck_2002, title={Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching}, DOI={<a href=\"https://doi.org/10.1016/s0304-3991(99)00126-6\">10.1016/s0304-3991(99)00126-6</a>}, journal={Ultramicroscopy}, author={Skaberna, S and Versen, M and Klehn, B and Kunze, U and Reuter, Dirk and D. Wieck, A}, year={2002}, pages={153–157} }","short":"S. Skaberna, M. Versen, B. Klehn, U. Kunze, D. Reuter, A. D. Wieck, Ultramicroscopy (2002) 153–157.","mla":"Skaberna, S., et al. “Fabrication of a Quantum Point Contact by the Dynamic Plowing Technique and Wet-Chemical Etching.” <i>Ultramicroscopy</i>, 2002, pp. 153–57, doi:<a href=\"https://doi.org/10.1016/s0304-3991(99)00126-6\">10.1016/s0304-3991(99)00126-6</a>.","apa":"Skaberna, S., Versen, M., Klehn, B., Kunze, U., Reuter, D., &#38; D. Wieck, A. (2002). Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching. <i>Ultramicroscopy</i>, 153–157. <a href=\"https://doi.org/10.1016/s0304-3991(99)00126-6\">https://doi.org/10.1016/s0304-3991(99)00126-6</a>"},"page":"153-157","year":"2002","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8773","language":[{"iso":"eng"}],"type":"journal_article","publication":"Ultramicroscopy","status":"public"},{"language":[{"iso":"eng"}],"_id":"8774","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"Physica E: Low-dimensional Systems and Nanostructures","type":"journal_article","title":"In-plane and perpendicular tunneling through InAs quantum dots","doi":"10.1016/s1386-9477(99)00354-9","date_updated":"2022-01-06T07:04:00Z","author":[{"first_name":"K.H","full_name":"Schmidt, K.H","last_name":"Schmidt"},{"first_name":"M","full_name":"Versen, M","last_name":"Versen"},{"first_name":"C","last_name":"Bock","full_name":"Bock, C"},{"first_name":"U","full_name":"Kunze, U","last_name":"Kunze"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A.D","last_name":"Wieck","first_name":"A.D"}],"date_created":"2019-04-01T08:13:43Z","year":"2002","page":"425-429","citation":{"ama":"Schmidt K., Versen M, Bock C, Kunze U, Reuter D, Wieck A. In-plane and perpendicular tunneling through InAs quantum dots. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:425-429. doi:<a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">10.1016/s1386-9477(99)00354-9</a>","chicago":"Schmidt, K.H, M Versen, C Bock, U Kunze, Dirk Reuter, and A.D Wieck. “In-Plane and Perpendicular Tunneling through InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 425–29. <a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">https://doi.org/10.1016/s1386-9477(99)00354-9</a>.","ieee":"K. . Schmidt, M. Versen, C. Bock, U. Kunze, D. Reuter, and A. . Wieck, “In-plane and perpendicular tunneling through InAs quantum dots,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 425–429, 2002.","short":"K.. Schmidt, M. Versen, C. Bock, U. Kunze, D. Reuter, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2002) 425–429.","mla":"Schmidt, K. .., et al. “In-Plane and Perpendicular Tunneling through InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 425–29, doi:<a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">10.1016/s1386-9477(99)00354-9</a>.","bibtex":"@article{Schmidt_Versen_Bock_Kunze_Reuter_Wieck_2002, title={In-plane and perpendicular tunneling through InAs quantum dots}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">10.1016/s1386-9477(99)00354-9</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schmidt, K.H and Versen, M and Bock, C and Kunze, U and Reuter, Dirk and Wieck, A.D}, year={2002}, pages={425–429} }","apa":"Schmidt, K. ., Versen, M., Bock, C., Kunze, U., Reuter, D., &#38; Wieck, A. . (2002). In-plane and perpendicular tunneling through InAs quantum dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 425–429. <a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">https://doi.org/10.1016/s1386-9477(99)00354-9</a>"},"publication_identifier":{"issn":["1386-9477"]},"publication_status":"published"},{"status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"8776","page":"15879-15887","citation":{"chicago":"Schmidt, K. H., M. Versen, U. Kunze, Dirk Reuter, and A. D. Wieck. “Electron Transport through a Single InAs Quantum Dot.” <i>Physical Review B</i>, 2002, 15879–87. <a href=\"https://doi.org/10.1103/physrevb.62.15879\">https://doi.org/10.1103/physrevb.62.15879</a>.","ieee":"K. H. Schmidt, M. Versen, U. Kunze, D. Reuter, and A. D. Wieck, “Electron transport through a single InAs quantum dot,” <i>Physical Review B</i>, pp. 15879–15887, 2002.","ama":"Schmidt KH, Versen M, Kunze U, Reuter D, Wieck AD. Electron transport through a single InAs quantum dot. <i>Physical Review B</i>. 2002:15879-15887. doi:<a href=\"https://doi.org/10.1103/physrevb.62.15879\">10.1103/physrevb.62.15879</a>","short":"K.H. Schmidt, M. Versen, U. Kunze, D. Reuter, A.D. Wieck, Physical Review B (2002) 15879–15887.","bibtex":"@article{Schmidt_Versen_Kunze_Reuter_Wieck_2002, title={Electron transport through a single InAs quantum dot}, DOI={<a href=\"https://doi.org/10.1103/physrevb.62.15879\">10.1103/physrevb.62.15879</a>}, journal={Physical Review B}, author={Schmidt, K. H. and Versen, M. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={15879–15887} }","mla":"Schmidt, K. H., et al. “Electron Transport through a Single InAs Quantum Dot.” <i>Physical Review B</i>, 2002, pp. 15879–87, doi:<a href=\"https://doi.org/10.1103/physrevb.62.15879\">10.1103/physrevb.62.15879</a>.","apa":"Schmidt, K. H., Versen, M., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2002). Electron transport through a single InAs quantum dot. <i>Physical Review B</i>, 15879–15887. <a href=\"https://doi.org/10.1103/physrevb.62.15879\">https://doi.org/10.1103/physrevb.62.15879</a>"},"year":"2002","publication_identifier":{"issn":["0163-1829","1095-3795"]},"publication_status":"published","doi":"10.1103/physrevb.62.15879","title":"Electron transport through a single InAs quantum dot","date_created":"2019-04-01T08:15:38Z","author":[{"first_name":"K. H.","full_name":"Schmidt, K. H.","last_name":"Schmidt"},{"last_name":"Versen","full_name":"Versen, M.","first_name":"M."},{"first_name":"U.","last_name":"Kunze","full_name":"Kunze, U."},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"date_updated":"2022-01-06T07:04:00Z"},{"status":"public","type":"journal_article","publication":"Physica B: Condensed Matter","language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8778","citation":{"apa":"Heidtkamp, C., Lassen, S., Schneider, M., Reuter, D., Versen, M., &#38; Wieck, A. D. (2002). Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems. <i>Physica B: Condensed Matter</i>, 1726–1727. <a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">https://doi.org/10.1016/s0921-4526(99)02890-2</a>","bibtex":"@article{Heidtkamp_Lassen_Schneider_Reuter_Versen_Wieck_2002, title={Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems}, DOI={<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>}, journal={Physica B: Condensed Matter}, author={Heidtkamp, Christian and Lassen, Sabine and Schneider, Marcus and Reuter, Dirk and Versen, Martin and Wieck, Andreas D.}, year={2002}, pages={1726–1727} }","short":"C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, A.D. Wieck, Physica B: Condensed Matter (2002) 1726–1727.","mla":"Heidtkamp, Christian, et al. “Dependence of the Longitudinal Resistance on Edge Potential and Electron Density in Quantum Hall Systems.” <i>Physica B: Condensed Matter</i>, 2002, pp. 1726–27, doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>.","ieee":"C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, and A. D. Wieck, “Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems,” <i>Physica B: Condensed Matter</i>, pp. 1726–1727, 2002.","chicago":"Heidtkamp, Christian, Sabine Lassen, Marcus Schneider, Dirk Reuter, Martin Versen, and Andreas D. Wieck. “Dependence of the Longitudinal Resistance on Edge Potential and Electron Density in Quantum Hall Systems.” <i>Physica B: Condensed Matter</i>, 2002, 1726–27. <a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">https://doi.org/10.1016/s0921-4526(99)02890-2</a>.","ama":"Heidtkamp C, Lassen S, Schneider M, Reuter D, Versen M, Wieck AD. Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems. <i>Physica B: Condensed Matter</i>. 2002:1726-1727. doi:<a href=\"https://doi.org/10.1016/s0921-4526(99)02890-2\">10.1016/s0921-4526(99)02890-2</a>"},"page":"1726-1727","year":"2002","publication_status":"published","publication_identifier":{"issn":["0921-4526"]},"doi":"10.1016/s0921-4526(99)02890-2","title":"Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems","author":[{"last_name":"Heidtkamp","full_name":"Heidtkamp, Christian","first_name":"Christian"},{"full_name":"Lassen, Sabine","last_name":"Lassen","first_name":"Sabine"},{"last_name":"Schneider","full_name":"Schneider, Marcus","first_name":"Marcus"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"Martin","full_name":"Versen, Martin","last_name":"Versen"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."}],"date_created":"2019-04-01T08:18:28Z","date_updated":"2022-01-06T07:04:00Z"},{"status":"public","type":"journal_article","publication":"Review of Scientific Instruments","language":[{"iso":"eng"}],"_id":"8779","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"year":"2002","citation":{"apa":"Reuter, D., Wieck, A. D., &#38; Fischer, A. (2002). A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy. <i>Review of Scientific Instruments</i>, 3435–3438. <a href=\"https://doi.org/10.1063/1.1149933\">https://doi.org/10.1063/1.1149933</a>","short":"D. Reuter, A.D. Wieck, A. Fischer, Review of Scientific Instruments (2002) 3435–3438.","bibtex":"@article{Reuter_Wieck_Fischer_2002, title={A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy}, DOI={<a href=\"https://doi.org/10.1063/1.1149933\">10.1063/1.1149933</a>}, journal={Review of Scientific Instruments}, author={Reuter, Dirk and Wieck, A. D. and Fischer, A.}, year={2002}, pages={3435–3438} }","mla":"Reuter, Dirk, et al. “A Compact Electron Beam Evaporator for Carbon Doping in Solid Source Molecular Beam Epitaxy.” <i>Review of Scientific Instruments</i>, 2002, pp. 3435–38, doi:<a href=\"https://doi.org/10.1063/1.1149933\">10.1063/1.1149933</a>.","ieee":"D. Reuter, A. D. Wieck, and A. Fischer, “A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy,” <i>Review of Scientific Instruments</i>, pp. 3435–3438, 2002.","chicago":"Reuter, Dirk, A. D. Wieck, and A. Fischer. “A Compact Electron Beam Evaporator for Carbon Doping in Solid Source Molecular Beam Epitaxy.” <i>Review of Scientific Instruments</i>, 2002, 3435–38. <a href=\"https://doi.org/10.1063/1.1149933\">https://doi.org/10.1063/1.1149933</a>.","ama":"Reuter D, Wieck AD, Fischer A. A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy. <i>Review of Scientific Instruments</i>. 2002:3435-3438. doi:<a href=\"https://doi.org/10.1063/1.1149933\">10.1063/1.1149933</a>"},"page":"3435-3438","publication_status":"published","publication_identifier":{"issn":["0034-6748","1089-7623"]},"title":"A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy","doi":"10.1063/1.1149933","date_updated":"2022-01-06T07:04:00Z","author":[{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"first_name":"A.","full_name":"Fischer, A.","last_name":"Fischer"}],"date_created":"2019-04-01T08:27:04Z"},{"type":"journal_article","publication":"Review of Scientific Instruments","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"8780","language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["0034-6748","1089-7623"]},"citation":{"ama":"Reuter D, Wieck AD, Fischer A. A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy. <i>Review of Scientific Instruments</i>. 2002:3435-3438. doi:<a href=\"https://doi.org/10.1063/1.1149933\">10.1063/1.1149933</a>","chicago":"Reuter, Dirk, A. D. Wieck, and A. Fischer. “A Compact Electron Beam Evaporator for Carbon Doping in Solid Source Molecular Beam Epitaxy.” <i>Review of Scientific Instruments</i>, 2002, 3435–38. <a href=\"https://doi.org/10.1063/1.1149933\">https://doi.org/10.1063/1.1149933</a>.","ieee":"D. Reuter, A. D. Wieck, and A. Fischer, “A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy,” <i>Review of Scientific Instruments</i>, pp. 3435–3438, 2002.","apa":"Reuter, D., Wieck, A. D., &#38; Fischer, A. (2002). A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy. <i>Review of Scientific Instruments</i>, 3435–3438. <a href=\"https://doi.org/10.1063/1.1149933\">https://doi.org/10.1063/1.1149933</a>","bibtex":"@article{Reuter_Wieck_Fischer_2002, title={A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy}, DOI={<a href=\"https://doi.org/10.1063/1.1149933\">10.1063/1.1149933</a>}, journal={Review of Scientific Instruments}, author={Reuter, Dirk and Wieck, A. D. and Fischer, A.}, year={2002}, pages={3435–3438} }","short":"D. Reuter, A.D. Wieck, A. Fischer, Review of Scientific Instruments (2002) 3435–3438.","mla":"Reuter, Dirk, et al. “A Compact Electron Beam Evaporator for Carbon Doping in Solid Source Molecular Beam Epitaxy.” <i>Review of Scientific Instruments</i>, 2002, pp. 3435–38, doi:<a href=\"https://doi.org/10.1063/1.1149933\">10.1063/1.1149933</a>."},"page":"3435-3438","year":"2002","date_created":"2019-04-01T08:28:09Z","author":[{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"A.","last_name":"Fischer","full_name":"Fischer, A."}],"date_updated":"2022-01-06T07:04:00Z","doi":"10.1063/1.1149933","title":"A compact electron beam evaporator for carbon doping in solid source molecular beam epitaxy"}]