[{"year":"2002","citation":{"ama":"Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE Transactions on Electron Devices</i>. 2002;42(5):841-846. doi:<a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>","ieee":"U. Hilleringmann and K. Goser, “Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip,” <i>IEEE Transactions on Electron Devices</i>, vol. 42, no. 5, pp. 841–846, 2002, doi: <a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>.","chicago":"Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE Transactions on Electron Devices</i> 42, no. 5 (2002): 841–46. <a href=\"https://doi.org/10.1109/16.381978\">https://doi.org/10.1109/16.381978</a>.","mla":"Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE Transactions on Electron Devices</i>, vol. 42, no. 5, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 841–46, doi:<a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>.","bibtex":"@article{Hilleringmann_Goser_2002, title={Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip}, volume={42}, DOI={<a href=\"https://doi.org/10.1109/16.381978\">10.1109/16.381978</a>}, number={5}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={841–846} }","short":"U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices 42 (2002) 841–846.","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE Transactions on Electron Devices</i>, <i>42</i>(5), 841–846. <a href=\"https://doi.org/10.1109/16.381978\">https://doi.org/10.1109/16.381978</a>"},"page":"841-846","intvolume":"        42","publication_status":"published","publication_identifier":{"issn":["0018-9383"]},"issue":"5","title":"Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip","doi":"10.1109/16.381978","date_updated":"2023-03-21T09:51:52Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","author":[{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"date_created":"2023-01-25T09:22:34Z","volume":42,"status":"public","type":"journal_article","publication":"IEEE Transactions on Electron Devices","keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39904","user_id":"20179","department":[{"_id":"59"}]},{"doi":"10.1016/0167-9317(93)90092-j","volume":21,"author":[{"last_name":"Schönstein","full_name":"Schönstein, I.","first_name":"I."},{"last_name":"Müller","full_name":"Müller, J.","first_name":"J."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"date_updated":"2023-03-21T09:50:03Z","intvolume":"        21","page":"363-366","citation":{"ieee":"I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization of submicron NMOS devices due to visible light emission,” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, pp. 363–366, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","chicago":"Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i> 21, no. 1–4 (2002): 363–66. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>.","ama":"Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>. 2002;21(1-4):363-366. doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>","apa":"Schönstein, I., Müller, J., Hilleringmann, U., &#38; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>, <i>21</i>(1–4), 363–366. <a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">https://doi.org/10.1016/0167-9317(93)90092-j</a>","mla":"Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, Elsevier BV, 2002, pp. 363–66, doi:<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>.","bibtex":"@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization of submicron NMOS devices due to visible light emission}, volume={21}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(93)90092-j\">10.1016/0167-9317(93)90092-j</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={363–366} }","short":"I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering 21 (2002) 363–366."},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","department":[{"_id":"59"}],"user_id":"20179","_id":"39912","status":"public","type":"journal_article","title":"Characterization of submicron NMOS devices due to visible light emission","date_created":"2023-01-25T09:26:21Z","publisher":"Elsevier BV","year":"2002","issue":"1-4","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"publication":"Microelectronic Engineering"},{"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication":"Microelectronic Engineering","publisher":"Elsevier BV","date_created":"2023-01-25T09:27:23Z","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","issue":"1-4","year":"2002","_id":"39914","department":[{"_id":"59"}],"user_id":"20179","type":"journal_article","status":"public","date_updated":"2023-03-21T09:49:25Z","volume":19,"author":[{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"doi":"10.1016/0167-9317(92)90425-q","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","page":"211-214","intvolume":"        19","citation":{"chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>"}},{"year":"2002","citation":{"ieee":"E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","chicago":"Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i> 29, no. 8 (2002): 1006–10. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>.","ama":"Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010. doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>","apa":"Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>, <i>29</i>(8), 1006–1010. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>","short":"E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.","mla":"Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","bibtex":"@article{Brass_Hilleringmann_Schumacher_2002, title={System integration of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }"},"intvolume":"        29","page":"1006-1010","publication_status":"published","publication_identifier":{"issn":["0018-9200"]},"issue":"8","title":"System integration of optical devices and analog CMOS amplifiers","doi":"10.1109/4.297714","date_updated":"2023-03-21T09:51:19Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_created":"2023-01-25T09:23:36Z","author":[{"first_name":"E.","full_name":"Brass, E.","last_name":"Brass"},{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."}],"volume":29,"status":"public","type":"journal_article","publication":"IEEE Journal of Solid-State Circuits","keyword":["Electrical and Electronic Engineering"],"language":[{"iso":"eng"}],"_id":"39906","user_id":"20179","department":[{"_id":"59"}]},{"language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39907","status":"public","type":"journal_article","publication":"IEEE Journal of Solid-State Circuits","doi":"10.1109/4.297714","title":"System integration of optical devices and analog CMOS amplifiers","date_created":"2023-01-25T09:24:15Z","author":[{"last_name":"Brass","full_name":"Brass, E.","first_name":"E."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"last_name":"Schumacher","full_name":"Schumacher, K.","first_name":"K."}],"volume":29,"date_updated":"2023-03-21T09:51:33Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","citation":{"apa":"Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>, <i>29</i>(8), 1006–1010. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>","short":"E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits 29 (2002) 1006–1010.","mla":"Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","bibtex":"@article{Brass_Hilleringmann_Schumacher_2002, title={System integration of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }","ama":"Brass E, Hilleringmann U, Schumacher K. System integration of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010. doi:<a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>","ieee":"E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href=\"https://doi.org/10.1109/4.297714\">10.1109/4.297714</a>.","chicago":"Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State Circuits</i> 29, no. 8 (2002): 1006–10. <a href=\"https://doi.org/10.1109/4.297714\">https://doi.org/10.1109/4.297714</a>."},"page":"1006-1010","intvolume":"        29","year":"2002","issue":"8","publication_status":"published","publication_identifier":{"issn":["0018-9200"]}},{"status":"public","type":"journal_article","publication":"Microelectronic Engineering","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39899","citation":{"mla":"Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique}, volume={30}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={431–434} }","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30 (2002) 431–434.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,” <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">https://doi.org/10.1016/0167-9317(95)00280-4</a>.","ama":"Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic Engineering</i>. 2002;30(1-4):431-434. doi:<a href=\"https://doi.org/10.1016/0167-9317(95)00280-4\">10.1016/0167-9317(95)00280-4</a>"},"page":"431-434","intvolume":"        30","year":"2002","issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"doi":"10.1016/0167-9317(95)00280-4","title":"Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique","date_created":"2023-01-25T09:20:20Z","author":[{"first_name":"J.T.","full_name":"Horstmann, J.T.","last_name":"Horstmann"},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"volume":30,"publisher":"Elsevier BV","date_updated":"2023-03-21T09:53:55Z"},{"publication_identifier":{"issn":["0272-1732"]},"publication_status":"published","intvolume":"         9","page":"28-44","citation":{"chicago":"Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002): 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>.","ieee":"K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44, 2002, doi: <a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","ama":"Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>","mla":"Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","short":"K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44.","bibtex":"@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }","apa":"Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>"},"date_updated":"2023-03-21T09:57:17Z","volume":9,"author":[{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"full_name":"Rueckert, U.","last_name":"Rueckert","first_name":"U."},{"first_name":"K.","full_name":"Schumacher, K.","last_name":"Schumacher"}],"doi":"10.1109/40.42985","type":"journal_article","status":"public","_id":"39925","department":[{"_id":"59"}],"user_id":"20179","issue":"6","year":"2002","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_created":"2023-01-25T09:33:18Z","title":"VLSI technologies for artificial neural networks","publication":"IEEE Micro","keyword":["Electrical and Electronic Engineering","Hardware and Architecture","Software"],"language":[{"iso":"eng"}]},{"citation":{"apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 53 (2002) 525–528.","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={525–528} }","mla":"Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","ama":"Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic Engineering</i>. 2002;53(1-4):525-528. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">10.1016/s0167-9317(00)00370-1</a>.","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation Technique for Smart Power Switching Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href=\"https://doi.org/10.1016/s0167-9317(00)00370-1\">https://doi.org/10.1016/s0167-9317(00)00370-1</a>."},"page":"525-528","intvolume":"        53","year":"2002","issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"doi":"10.1016/s0167-9317(00)00370-1","title":"A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV","author":[{"first_name":"V.","full_name":"Mankowski, V.","last_name":"Mankowski"},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"full_name":"Schumacher, K.","last_name":"Schumacher","first_name":"K."}],"date_created":"2023-01-25T09:10:13Z","volume":53,"date_updated":"2023-03-21T10:00:06Z","publisher":"Elsevier BV","status":"public","type":"journal_article","publication":"Microelectronic Engineering","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39882"},{"issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"citation":{"mla":"Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>.","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53 (2002) 213–216.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={213–216} }","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>","ama":"Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>Microelectronic Engineering</i>. 2002;53(1-4):213-216. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">https://doi.org/10.1016/s0167-9317(00)00299-9</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00299-9\">10.1016/s0167-9317(00)00299-9</a>."},"intvolume":"        53","page":"213-216","year":"2002","author":[{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."},{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"date_created":"2023-01-25T09:08:36Z","volume":53,"publisher":"Elsevier BV","date_updated":"2023-03-21T10:02:46Z","doi":"10.1016/s0167-9317(00)00299-9","title":"1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","type":"journal_article","publication":"Microelectronic Engineering","status":"public","user_id":"20179","department":[{"_id":"59"}],"_id":"39879","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"]},{"publication_status":"published","year":"2002","citation":{"apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. <a href=\"https://doi.org/10.1109/iecon.2000.972560\">https://doi.org/10.1109/iecon.2000.972560</a>","short":"J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.","bibtex":"@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, DOI={<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>}, booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002} }","mla":"Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>, IEEE, 2002, doi:<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>.","ama":"Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE; 2002. doi:<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” In <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE, 2002. <a href=\"https://doi.org/10.1109/iecon.2000.972560\">https://doi.org/10.1109/iecon.2000.972560</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” 2002, doi: <a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>."},"publisher":"IEEE","date_updated":"2023-03-21T10:02:30Z","author":[{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"last_name":"Goser","full_name":"Goser, K.","first_name":"K."}],"date_created":"2023-01-25T09:09:18Z","title":"Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","doi":"10.1109/iecon.2000.972560","publication":"2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)","type":"conference","status":"public","_id":"39880","department":[{"_id":"59"}],"user_id":"20179","language":[{"iso":"eng"}]},{"department":[{"_id":"59"}],"user_id":"20179","_id":"39881","language":[{"iso":"eng"}],"publication":"2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)","type":"conference","status":"public","author":[{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"date_created":"2023-01-25T09:09:53Z","date_updated":"2023-03-21T10:02:17Z","publisher":"IEEE","doi":"10.1109/iecon.2000.972560","title":"Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique","publication_status":"published","citation":{"short":"J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.","bibtex":"@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique}, DOI={<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>}, booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002} }","mla":"Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>, IEEE, 2002, doi:<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. <a href=\"https://doi.org/10.1109/iecon.2000.972560\">https://doi.org/10.1109/iecon.2000.972560</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.” In <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE, 2002. <a href=\"https://doi.org/10.1109/iecon.2000.972560\">https://doi.org/10.1109/iecon.2000.972560</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,” 2002, doi: <a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>.","ama":"Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. In: <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE; 2002. doi:<a href=\"https://doi.org/10.1109/iecon.2000.972560\">10.1109/iecon.2000.972560</a>"},"year":"2002"},{"status":"public","type":"journal_article","publication":"Microelectronic Engineering","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39919","citation":{"ama":"Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>. 2002;15(1-4):289-292. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>","chicago":"Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>.","ieee":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","mla":"Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>.","bibtex":"@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">10.1016/0167-9317(91)90231-2</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K.}, year={2002}, pages={289–292} }","short":"U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering 15 (2002) 289–292.","apa":"Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href=\"https://doi.org/10.1016/0167-9317(91)90231-2\">https://doi.org/10.1016/0167-9317(91)90231-2</a>"},"page":"289-292","intvolume":"        15","year":"2002","issue":"1-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"doi":"10.1016/0167-9317(91)90231-2","title":"A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits","date_created":"2023-01-25T09:29:32Z","author":[{"last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"first_name":"K.","last_name":"Knospe","full_name":"Knospe, K."},{"first_name":"C.","full_name":"Heite, C.","last_name":"Heite"},{"first_name":"K.","full_name":"Schumacher, K.","last_name":"Schumacher"},{"first_name":"K.","full_name":"Goser, K.","last_name":"Goser"}],"volume":15,"date_updated":"2023-03-22T10:29:08Z","publisher":"Elsevier BV"},{"status":"public","type":"journal_article","publication":"IEEE Micro","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Hardware and Architecture","Software"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39926","citation":{"chicago":"Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002): 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>.","ieee":"K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44, 2002, doi: <a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","ama":"Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>","mla":"Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 28–44, doi:<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>.","bibtex":"@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies for artificial neural networks}, volume={9}, DOI={<a href=\"https://doi.org/10.1109/40.42985\">10.1109/40.42985</a>}, number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K.}, year={2002}, pages={28–44} }","short":"K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002) 28–44.","apa":"Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44. <a href=\"https://doi.org/10.1109/40.42985\">https://doi.org/10.1109/40.42985</a>"},"intvolume":"         9","page":"28-44","year":"2002","issue":"6","publication_status":"published","publication_identifier":{"issn":["0272-1732"]},"doi":"10.1109/40.42985","title":"VLSI technologies for artificial neural networks","author":[{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."},{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"},{"last_name":"Rueckert","full_name":"Rueckert, U.","first_name":"U."},{"first_name":"K.","last_name":"Schumacher","full_name":"Schumacher, K."}],"date_created":"2023-01-25T09:33:50Z","volume":9,"date_updated":"2023-03-22T10:36:45Z","publisher":"Institute of Electrical and Electronics Engineers (IEEE)"},{"doi":"10.1109/iecon.1998.724097","title":"Nuclear radiation detectors on various type diamonds","author":[{"last_name":"Blum","full_name":"Blum, F.","first_name":"F."},{"first_name":"A.","full_name":"Denisenko, A.","last_name":"Denisenko"},{"last_name":"Job","full_name":"Job, R.","first_name":"R."},{"first_name":"D.","full_name":"Borchert, D.","last_name":"Borchert"},{"first_name":"W.","full_name":"Weber, W.","last_name":"Weber"},{"full_name":"Borany, J.V.","last_name":"Borany","first_name":"J.V."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"W.R.","full_name":"Fahrner, W.R.","last_name":"Fahrner"}],"date_created":"2023-01-25T09:15:11Z","publisher":"IEEE","date_updated":"2023-03-22T10:38:37Z","citation":{"ama":"Blum F, Denisenko A, Job R, et al. Nuclear radiation detectors on various type diamonds. In: <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE; 2002. doi:<a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>","ieee":"F. Blum <i>et al.</i>, “Nuclear radiation detectors on various type diamonds,” 2002, doi: <a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>.","chicago":"Blum, F., A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, Ulrich Hilleringmann, and W.R. Fahrner. “Nuclear Radiation Detectors on Various Type Diamonds.” In <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE, 2002. <a href=\"https://doi.org/10.1109/iecon.1998.724097\">https://doi.org/10.1109/iecon.1998.724097</a>.","apa":"Blum, F., Denisenko, A., Job, R., Borchert, D., Weber, W., Borany, J. V., Hilleringmann, U., &#38; Fahrner, W. R. (2002). Nuclear radiation detectors on various type diamonds. <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. <a href=\"https://doi.org/10.1109/iecon.1998.724097\">https://doi.org/10.1109/iecon.1998.724097</a>","bibtex":"@inproceedings{Blum_Denisenko_Job_Borchert_Weber_Borany_Hilleringmann_Fahrner_2002, title={Nuclear radiation detectors on various type diamonds}, DOI={<a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>}, booktitle={IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)}, publisher={IEEE}, author={Blum, F. and Denisenko, A. and Job, R. and Borchert, D. and Weber, W. and Borany, J.V. and Hilleringmann, Ulrich and Fahrner, W.R.}, year={2002} }","mla":"Blum, F., et al. “Nuclear Radiation Detectors on Various Type Diamonds.” <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>, IEEE, 2002, doi:<a href=\"https://doi.org/10.1109/iecon.1998.724097\">10.1109/iecon.1998.724097</a>.","short":"F. Blum, A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, U. Hilleringmann, W.R. Fahrner, in: IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200), IEEE, 2002."},"year":"2002","publication_status":"published","language":[{"iso":"eng"}],"user_id":"20179","department":[{"_id":"59"}],"_id":"39892","status":"public","type":"conference","publication":"IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200)"},{"issue":"16","publication_status":"published","citation":{"ieee":"T. Meier <i>et al.</i>, “Interacting electrons in a one-dimensional random array of scatterers: A quantum dynamics and Monte Carlo study,” <i>Physical Review B</i>, vol. 65, no. 16, Art. no. 165124, 2002, doi: <a href=\"https://doi.org/10.1103/PhysRevB.65.165124\">10.1103/PhysRevB.65.165124</a>.","chicago":"Meier, Torsten, V. Filinov, P. Thomas, I. Varga, M. Bonitz, V. Fortov, and S.W. Koch. “Interacting Electrons in a One-Dimensional Random Array of Scatterers: A Quantum Dynamics and Monte Carlo Study.” <i>Physical Review B</i> 65, no. 16 (2002). <a href=\"https://doi.org/10.1103/PhysRevB.65.165124\">https://doi.org/10.1103/PhysRevB.65.165124</a>.","ama":"Meier T, Filinov V, Thomas P, et al. Interacting electrons in a one-dimensional random array of scatterers: A quantum dynamics and Monte Carlo study. <i>Physical Review B</i>. 2002;65(16). doi:<a href=\"https://doi.org/10.1103/PhysRevB.65.165124\">10.1103/PhysRevB.65.165124</a>","apa":"Meier, T., Filinov, V., Thomas, P., Varga, I., Bonitz, M., Fortov, V., &#38; Koch, S. W. (2002). Interacting electrons in a one-dimensional random array of scatterers: A quantum dynamics and Monte Carlo study. <i>Physical Review B</i>, <i>65</i>(16), Article 165124. <a href=\"https://doi.org/10.1103/PhysRevB.65.165124\">https://doi.org/10.1103/PhysRevB.65.165124</a>","mla":"Meier, Torsten, et al. “Interacting Electrons in a One-Dimensional Random Array of Scatterers: A Quantum Dynamics and Monte Carlo Study.” <i>Physical Review B</i>, vol. 65, no. 16, 165124, American Physical Society, 2002, doi:<a href=\"https://doi.org/10.1103/PhysRevB.65.165124\">10.1103/PhysRevB.65.165124</a>.","bibtex":"@article{Meier_Filinov_Thomas_Varga_Bonitz_Fortov_Koch_2002, title={Interacting electrons in a one-dimensional random array of scatterers: A quantum dynamics and Monte Carlo study}, volume={65}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.65.165124\">10.1103/PhysRevB.65.165124</a>}, number={16165124}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Filinov, V. and Thomas, P. and Varga, I. and Bonitz, M. and Fortov, V. and Koch, S.W.}, year={2002} }","short":"T. Meier, V. Filinov, P. Thomas, I. Varga, M. Bonitz, V. Fortov, S.W. Koch, Physical Review B 65 (2002)."},"intvolume":"        65","year":"2002","date_created":"2023-04-02T13:23:14Z","author":[{"first_name":"Torsten","id":"344","full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"last_name":"Filinov","full_name":"Filinov, V.","first_name":"V."},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"},{"last_name":"Varga","full_name":"Varga, I.","first_name":"I."},{"last_name":"Bonitz","full_name":"Bonitz, M.","first_name":"M."},{"full_name":"Fortov, V.","last_name":"Fortov","first_name":"V."},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."}],"volume":65,"publisher":"American Physical Society","date_updated":"2023-04-02T13:23:17Z","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.65.165124"}],"doi":"10.1103/PhysRevB.65.165124","title":"Interacting electrons in a one-dimensional random array of scatterers: A quantum dynamics and Monte Carlo study","type":"journal_article","publication":"Physical Review B","status":"public","abstract":[{"text":"The quantum dynamics of an ensemble of interacting electrons in an array of random scatterers is treated using a numerical approach for the calculation of average values of quantum operators and time correlation functions in the Wigner representation. The Fourier transform of the product of matrix elements of the dynamic propagators obeys an integral Wigner-Liouville-type equation. Initial conditions for this equation are given by the Fourier transform of the Wiener path-integral representation of the matrix elements of the propagators at the chosen initial times. This approach combines both molecular dynamics and Monte Carlo methods and computes numerical traces and spectra of the relevant dynamical quantities such as momentum-momentum correlation functions and spatial dispersions. Considering, as an application, a system with fixed scatterers, the results clearly demonstrate that the many-particle interaction between the electrons leads to an enhancement of the conductivity and spatial dispersion compared to the noninteracting case.","lang":"eng"}],"user_id":"49063","department":[{"_id":"293"}],"_id":"43294","extern":"1","language":[{"iso":"eng"}],"article_number":"165124"},{"citation":{"bibtex":"@article{Meier_Wachter_Maute_Kalt_Galbraith_Sieh_Koch_2002, title={Excitation induced shift and broadening of the exciton resonance}, volume={314}, DOI={<a href=\"https://doi.org/10.1016/S0921-4526(01)01400-4\">10.1016/S0921-4526(01)01400-4</a>}, number={1–4}, journal={Physica B: Condensed Matter}, publisher={North-Holland}, author={Meier, Torsten and Wachter, S. and Maute, M. and Kalt, H. and Galbraith, I. and Sieh, C. and Koch, S.W.}, year={2002}, pages={309–313} }","mla":"Meier, Torsten, et al. “Excitation Induced Shift and Broadening of the Exciton Resonance.” <i>Physica B: Condensed Matter</i>, vol. 314, no. 1–4, North-Holland, 2002, pp. 309–13, doi:<a href=\"https://doi.org/10.1016/S0921-4526(01)01400-4\">10.1016/S0921-4526(01)01400-4</a>.","short":"T. Meier, S. Wachter, M. Maute, H. Kalt, I. Galbraith, C. Sieh, S.W. Koch, Physica B: Condensed Matter 314 (2002) 309–313.","apa":"Meier, T., Wachter, S., Maute, M., Kalt, H., Galbraith, I., Sieh, C., &#38; Koch, S. W. (2002). Excitation induced shift and broadening of the exciton resonance. <i>Physica B: Condensed Matter</i>, <i>314</i>(1–4), 309–313. <a href=\"https://doi.org/10.1016/S0921-4526(01)01400-4\">https://doi.org/10.1016/S0921-4526(01)01400-4</a>","ieee":"T. Meier <i>et al.</i>, “Excitation induced shift and broadening of the exciton resonance,” <i>Physica B: Condensed Matter</i>, vol. 314, no. 1–4, pp. 309–313, 2002, doi: <a href=\"https://doi.org/10.1016/S0921-4526(01)01400-4\">10.1016/S0921-4526(01)01400-4</a>.","chicago":"Meier, Torsten, S. Wachter, M. Maute, H. Kalt, I. Galbraith, C. Sieh, and S.W. Koch. “Excitation Induced Shift and Broadening of the Exciton Resonance.” <i>Physica B: Condensed Matter</i> 314, no. 1–4 (2002): 309–13. <a href=\"https://doi.org/10.1016/S0921-4526(01)01400-4\">https://doi.org/10.1016/S0921-4526(01)01400-4</a>.","ama":"Meier T, Wachter S, Maute M, et al. Excitation induced shift and broadening of the exciton resonance. <i>Physica B: Condensed Matter</i>. 2002;314(1-4):309-313. doi:<a href=\"https://doi.org/10.1016/S0921-4526(01)01400-4\">10.1016/S0921-4526(01)01400-4</a>"},"intvolume":"       314","page":"309-313","publication_status":"published","main_file_link":[{"url":"https://www.sciencedirect.com/science/article/abs/pii/S0921452601014004"}],"doi":"10.1016/S0921-4526(01)01400-4","date_updated":"2023-04-02T13:26:10Z","author":[{"first_name":"Torsten","full_name":"Meier, Torsten","id":"344","orcid":"0000-0001-8864-2072","last_name":"Meier"},{"last_name":"Wachter","full_name":"Wachter, S.","first_name":"S."},{"full_name":"Maute, M.","last_name":"Maute","first_name":"M."},{"last_name":"Kalt","full_name":"Kalt, H.","first_name":"H."},{"full_name":"Galbraith, I.","last_name":"Galbraith","first_name":"I."},{"full_name":"Sieh, C.","last_name":"Sieh","first_name":"C."},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"}],"volume":314,"status":"public","type":"journal_article","extern":"1","_id":"43295","user_id":"49063","department":[{"_id":"293"}],"year":"2002","issue":"1-4","title":"Excitation induced shift and broadening of the exciton resonance","publisher":"North-Holland","date_created":"2023-04-02T13:26:07Z","abstract":[{"lang":"eng","text":"The influence of coherent photoexcited excitons on the absorption spectra and the Four Wave Mixing response of ZnSe/ZnMgSSe quantum wells is investigated for various polarization configurations. For purely resonant excitation at the heavy-hole-exciton a blue shift and an increasing homogeneous line width of the exciton absorption peak is found. The clear and stable blue shift shows a linear dependence on excitation fluence both in experiment and theory with different slopes for the different pump and probe polarization configurations. The equivalence of pump and probe, and Four Wave Mixing results is shown experimentally."}],"publication":"Physica B: Condensed Matter","language":[{"iso":"eng"}]},{"volume":15,"date_created":"2023-04-02T13:17:25Z","author":[{"full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"}],"publisher":"IOP Publishing","oa":"1","date_updated":"2023-04-02T13:17:29Z","doi":"10.1088/2058-7058/15/2/36","main_file_link":[{"open_access":"1","url":"https://iopscience.iop.org/article/10.1088/2058-7058/15/2/36/pdf"}],"title":"Particles get all dressed up","issue":"2","publication_status":"published","page":"24-25","intvolume":"        15","citation":{"bibtex":"@article{Meier_Koch_2002, title={Particles get all dressed up}, volume={15}, DOI={<a href=\"https://doi.org/10.1088/2058-7058/15/2/36\">10.1088/2058-7058/15/2/36</a>}, number={2}, journal={Physics World}, publisher={IOP Publishing}, author={Meier, Torsten and Koch, S.W.}, year={2002}, pages={24–25} }","mla":"Meier, Torsten, and S. W. Koch. “Particles Get All Dressed Up.” <i>Physics World</i>, vol. 15, no. 2, IOP Publishing, 2002, pp. 24–25, doi:<a href=\"https://doi.org/10.1088/2058-7058/15/2/36\">10.1088/2058-7058/15/2/36</a>.","short":"T. Meier, S.W. Koch, Physics World 15 (2002) 24–25.","apa":"Meier, T., &#38; Koch, S. W. (2002). Particles get all dressed up. <i>Physics World</i>, <i>15</i>(2), 24–25. <a href=\"https://doi.org/10.1088/2058-7058/15/2/36\">https://doi.org/10.1088/2058-7058/15/2/36</a>","ieee":"T. Meier and S. W. Koch, “Particles get all dressed up,” <i>Physics World</i>, vol. 15, no. 2, pp. 24–25, 2002, doi: <a href=\"https://doi.org/10.1088/2058-7058/15/2/36\">10.1088/2058-7058/15/2/36</a>.","chicago":"Meier, Torsten, and S.W. Koch. “Particles Get All Dressed Up.” <i>Physics World</i> 15, no. 2 (2002): 24–25. <a href=\"https://doi.org/10.1088/2058-7058/15/2/36\">https://doi.org/10.1088/2058-7058/15/2/36</a>.","ama":"Meier T, Koch SW. Particles get all dressed up. <i>Physics World</i>. 2002;15(2):24-25. doi:<a href=\"https://doi.org/10.1088/2058-7058/15/2/36\">10.1088/2058-7058/15/2/36</a>"},"year":"2002","department":[{"_id":"293"}],"user_id":"49063","_id":"43292","language":[{"iso":"eng"}],"extern":"1","publication":"Physics World","type":"journal_article","status":"public","abstract":[{"lang":"eng","text":"Physicists have realized during the last two decades that the physical properties of many condensed-matter systems are often best described in terms of lumps of charge, known as quasiparticles, rather than by electrons and ions. In a crystal under equlibrium conditions, for example, the mutual repulsion of the electrons leads to a cloud of positive charge surrounding each individual electron. This \"dressing\" of electrons leads to charge screening. In other words, a test charge placed far from an electron will feel the influence of a new entity with a smaller charge, rather than the charge on the \"bare\" electron."}]},{"language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"On the basis of a tight-binding model for a strongly disordered semiconductor with correlated conduction- and valence-band disorder a coherent dynamical intraband effect is analyzed. For systems that are excited by two specially designed ultrashort light-pulse sequences delayed by \r\nτ\r\n relatively to each other echolike phenomena are predicted to occur. In addition to the interband photon echo which shows up at exactly t=2τ relative to the first pulse, the system responds with two spontaneous intraband current pulses preceding and following the appearance of the photon echo. The temporal splitting depends on the electron-hole mass ratio. Calculating the population relaxation rate due to Coulomb scattering, it is concluded that the predicted new dynamical effect should be experimentally observable in an interacting and strongly disordered system, such as the Quantum Coulomb Glass."}],"publication":"Physical Review B","title":"Optically induced coherent intraband dynamics in disordered semiconductors","date_created":"2023-04-02T13:14:09Z","publisher":"American Physical Society","year":"2002","issue":"8","extern":"1","article_number":"085306","department":[{"_id":"293"}],"user_id":"49063","_id":"43291","status":"public","type":"journal_article","doi":"10.1103/PhysRevB.65.085306","main_file_link":[{"url":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.65.085306"}],"volume":65,"author":[{"full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"last_name":"Schlichenmaier","full_name":"Schlichenmaier, C.","first_name":"C."},{"first_name":"I.","full_name":"Varga, I.","last_name":"Varga"},{"last_name":"Thomas","full_name":"Thomas, P.","first_name":"P."},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"}],"date_updated":"2023-04-02T14:19:13Z","intvolume":"        65","citation":{"apa":"Meier, T., Schlichenmaier, C., Varga, I., Thomas, P., &#38; Koch, S. W. (2002). Optically induced coherent intraband dynamics in disordered semiconductors. <i>Physical Review B</i>, <i>65</i>(8), Article 085306. <a href=\"https://doi.org/10.1103/PhysRevB.65.085306\">https://doi.org/10.1103/PhysRevB.65.085306</a>","bibtex":"@article{Meier_Schlichenmaier_Varga_Thomas_Koch_2002, title={Optically induced coherent intraband dynamics in disordered semiconductors}, volume={65}, DOI={<a href=\"https://doi.org/10.1103/PhysRevB.65.085306\">10.1103/PhysRevB.65.085306</a>}, number={8085306}, journal={Physical Review B}, publisher={American Physical Society}, author={Meier, Torsten and Schlichenmaier, C. and Varga, I. and Thomas, P. and Koch, S.W.}, year={2002} }","mla":"Meier, Torsten, et al. “Optically Induced Coherent Intraband Dynamics in Disordered Semiconductors.” <i>Physical Review B</i>, vol. 65, no. 8, 085306, American Physical Society, 2002, doi:<a href=\"https://doi.org/10.1103/PhysRevB.65.085306\">10.1103/PhysRevB.65.085306</a>.","short":"T. Meier, C. Schlichenmaier, I. Varga, P. Thomas, S.W. Koch, Physical Review B 65 (2002).","ama":"Meier T, Schlichenmaier C, Varga I, Thomas P, Koch SW. Optically induced coherent intraband dynamics in disordered semiconductors. <i>Physical Review B</i>. 2002;65(8). doi:<a href=\"https://doi.org/10.1103/PhysRevB.65.085306\">10.1103/PhysRevB.65.085306</a>","chicago":"Meier, Torsten, C. Schlichenmaier, I. Varga, P. Thomas, and S.W. Koch. “Optically Induced Coherent Intraband Dynamics in Disordered Semiconductors.” <i>Physical Review B</i> 65, no. 8 (2002). <a href=\"https://doi.org/10.1103/PhysRevB.65.085306\">https://doi.org/10.1103/PhysRevB.65.085306</a>.","ieee":"T. Meier, C. Schlichenmaier, I. Varga, P. Thomas, and S. W. Koch, “Optically induced coherent intraband dynamics in disordered semiconductors,” <i>Physical Review B</i>, vol. 65, no. 8, Art. no. 085306, 2002, doi: <a href=\"https://doi.org/10.1103/PhysRevB.65.085306\">10.1103/PhysRevB.65.085306</a>."},"publication_status":"published"},{"language":[{"iso":"eng"}],"_id":"43607","user_id":"480","status":"public","type":"journal_article","publication":"Zeitschrift für Pädagogik und Theologie","title":"Crossover - Grenzverkehr. Ein Sampler zum Sound der Engel. Dem Andenken eines Engels - In memoriam Henning Schröer","date_updated":"2023-04-15T00:11:57Z","author":[{"id":"480","full_name":"Schroeter-Wittke, Harald","last_name":"Schroeter-Wittke","first_name":"Harald"},{"full_name":"Fermor, Gotthard","last_name":"Fermor","first_name":"Gotthard"}],"date_created":"2023-04-15T00:11:40Z","volume":54,"year":"2002","citation":{"ama":"Schroeter-Wittke H, Fermor G. Crossover - Grenzverkehr. Ein Sampler zum Sound der Engel. Dem Andenken eines Engels - In memoriam Henning Schröer. <i>Zeitschrift für Pädagogik und Theologie</i>. 2002;54:283-288.","ieee":"H. Schroeter-Wittke and G. Fermor, “Crossover - Grenzverkehr. Ein Sampler zum Sound der Engel. Dem Andenken eines Engels - In memoriam Henning Schröer,” <i>Zeitschrift für Pädagogik und Theologie</i>, vol. 54, pp. 283–288, 2002.","chicago":"Schroeter-Wittke, Harald, and Gotthard Fermor. “Crossover - Grenzverkehr. Ein Sampler Zum Sound Der Engel. Dem Andenken Eines Engels - In Memoriam Henning Schröer.” <i>Zeitschrift Für Pädagogik Und Theologie</i> 54 (2002): 283–88.","apa":"Schroeter-Wittke, H., &#38; Fermor, G. (2002). Crossover - Grenzverkehr. Ein Sampler zum Sound der Engel. Dem Andenken eines Engels - In memoriam Henning Schröer. <i>Zeitschrift Für Pädagogik Und Theologie</i>, <i>54</i>, 283–288.","mla":"Schroeter-Wittke, Harald, and Gotthard Fermor. “Crossover - Grenzverkehr. Ein Sampler Zum Sound Der Engel. Dem Andenken Eines Engels - In Memoriam Henning Schröer.” <i>Zeitschrift Für Pädagogik Und Theologie</i>, vol. 54, 2002, pp. 283–88.","bibtex":"@article{Schroeter-Wittke_Fermor_2002, title={Crossover - Grenzverkehr. Ein Sampler zum Sound der Engel. Dem Andenken eines Engels - In memoriam Henning Schröer}, volume={54}, journal={Zeitschrift für Pädagogik und Theologie}, author={Schroeter-Wittke, Harald and Fermor, Gotthard}, year={2002}, pages={283–288} }","short":"H. Schroeter-Wittke, G. Fermor, Zeitschrift Für Pädagogik Und Theologie 54 (2002) 283–288."},"intvolume":"        54","page":"283-288"},{"status":"public","editor":[{"first_name":"Eberhard","full_name":"Hauschildt, Eberhard","last_name":"Hauschildt"},{"full_name":"Schwab, Ulrich","last_name":"Schwab","first_name":"Ulrich"}],"type":"book_chapter","publication":"Praktische Theologie für das 21. Jahrhundert","language":[{"iso":"eng"}],"user_id":"480","_id":"43602","citation":{"bibtex":"@inbook{Schroeter-Wittke_2002, title={Praktische Theologie als Performance. Ein religionspädagogisches Programmheft mit 7 Programmpunkten}, booktitle={Praktische Theologie für das 21. Jahrhundert}, author={Schroeter-Wittke, Harald}, editor={Hauschildt, Eberhard and Schwab, Ulrich}, year={2002}, pages={143–159} }","short":"H. Schroeter-Wittke, in: E. Hauschildt, U. Schwab (Eds.), Praktische Theologie Für Das 21. Jahrhundert, 2002, pp. 143–159.","mla":"Schroeter-Wittke, Harald. “Praktische Theologie Als Performance. Ein Religionspädagogisches Programmheft Mit 7 Programmpunkten.” <i>Praktische Theologie Für Das 21. Jahrhundert</i>, edited by Eberhard Hauschildt and Ulrich Schwab, 2002, pp. 143–59.","apa":"Schroeter-Wittke, H. (2002). Praktische Theologie als Performance. Ein religionspädagogisches Programmheft mit 7 Programmpunkten. In E. Hauschildt &#38; U. Schwab (Eds.), <i>Praktische Theologie für das 21. Jahrhundert</i> (pp. 143–159).","ama":"Schroeter-Wittke H. Praktische Theologie als Performance. Ein religionspädagogisches Programmheft mit 7 Programmpunkten. In: Hauschildt E, Schwab U, eds. <i>Praktische Theologie Für Das 21. Jahrhundert</i>. ; 2002:143-159.","chicago":"Schroeter-Wittke, Harald. “Praktische Theologie Als Performance. Ein Religionspädagogisches Programmheft Mit 7 Programmpunkten.” In <i>Praktische Theologie Für Das 21. Jahrhundert</i>, edited by Eberhard Hauschildt and Ulrich Schwab, 143–59, 2002.","ieee":"H. Schroeter-Wittke, “Praktische Theologie als Performance. Ein religionspädagogisches Programmheft mit 7 Programmpunkten,” in <i>Praktische Theologie für das 21. Jahrhundert</i>, E. Hauschildt and U. Schwab, Eds. 2002, pp. 143–159."},"page":"143-159","year":"2002","title":"Praktische Theologie als Performance. Ein religionspädagogisches Programmheft mit 7 Programmpunkten","author":[{"last_name":"Schroeter-Wittke","full_name":"Schroeter-Wittke, Harald","id":"480","first_name":"Harald"}],"date_created":"2023-04-15T00:07:23Z","date_updated":"2023-04-15T00:07:36Z"}]