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Fuchs, <i>Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna: Vienna University of Technology, 2002.","ama":"Fuchs C. <i>Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna University of Technology; 2002.","bibtex":"@book{Fuchs_2002, place={Vienna}, title={Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper}, publisher={Vienna University of Technology}, author={Fuchs, Christian}, year={2002} }","mla":"Fuchs, Christian. <i>Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna University of Technology, 2002."},"type":"report","department":[{"_id":"136"}],"place":"Vienna","date_created":"2023-03-06T04:03:03Z"},{"date_created":"2023-02-24T04:06:02Z","place":"Vienna","type":"conference","department":[{"_id":"136"}],"publication":"Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research","citation":{"chicago":"Fuchs, Christian. “Social Information and Self-Organisation.” In <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research</i>, edited by Robert Trappl, 225–30. Vienna: Austrian Society for Cybernetic Studies, 2002.","short":"C. Fuchs, in: R. Trappl (Ed.), Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research, Austrian Society for Cybernetic Studies, Vienna, 2002, pp. 225–230.","apa":"Fuchs, C. (2002). Social Information and Self-Organisation. In R. Trappl (Ed.), <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research</i> (pp. 225–230). Austrian Society for Cybernetic Studies.","ieee":"C. Fuchs, “Social Information and Self-Organisation,” in <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research</i>, 2002, pp. 225–230.","ama":"Fuchs C. Social Information and Self-Organisation. In: Trappl R, ed. <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research</i>. Austrian Society for Cybernetic Studies; 2002:225-230.","bibtex":"@inproceedings{Fuchs_2002, place={Vienna}, title={Social Information and Self-Organisation}, booktitle={Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research}, publisher={Austrian Society for Cybernetic Studies}, author={Fuchs, Christian}, editor={Trappl, Robert}, year={2002}, pages={225–230} }","mla":"Fuchs, Christian. “Social Information and Self-Organisation.” <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research</i>, edited by Robert Trappl, Austrian Society for Cybernetic Studies, 2002, pp. 225–30."},"extern":"1","page":"225-230","publisher":"Austrian Society for Cybernetic Studies","_id":"42455","language":[{"iso":"eng"}],"user_id":"49063","editor":[{"full_name":"Trappl, Robert","last_name":"Trappl","first_name":"Robert"}],"status":"public","title":"Social Information and Self-Organisation","year":"2002","author":[{"full_name":"Fuchs, Christian","first_name":"Christian","orcid":"0000-0003-0589-4579","last_name":"Fuchs","id":"21863"}],"date_updated":"2023-03-08T07:09:41Z"},{"citation":{"ama":"Tiemann M, Goletto V, Blum R, Babonneau F, Amenitsch H, Lindén M. In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions. <i>Langmuir</i>. Published online 2002:10053-10057. doi:<a href=\"https://doi.org/10.1021/la026473w\">10.1021/la026473w</a>","bibtex":"@article{Tiemann_Goletto_Blum_Babonneau_Amenitsch_Lindén_2002, title={In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions}, DOI={<a href=\"https://doi.org/10.1021/la026473w\">10.1021/la026473w</a>}, journal={Langmuir}, author={Tiemann, Michael and Goletto, Valérie and Blum, Raphaël and Babonneau, Florence and Amenitsch, Heinz and Lindén, Mika}, year={2002}, pages={10053–10057} }","mla":"Tiemann, Michael, et al. “In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions.” <i>Langmuir</i>, 2002, pp. 10053–57, doi:<a href=\"https://doi.org/10.1021/la026473w\">10.1021/la026473w</a>.","chicago":"Tiemann, Michael, Valérie Goletto, Raphaël Blum, Florence Babonneau, Heinz Amenitsch, and Mika Lindén. “In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions.” <i>Langmuir</i>, 2002, 10053–57. <a href=\"https://doi.org/10.1021/la026473w\">https://doi.org/10.1021/la026473w</a>.","short":"M. Tiemann, V. Goletto, R. Blum, F. Babonneau, H. Amenitsch, M. Lindén, Langmuir (2002) 10053–10057.","apa":"Tiemann, M., Goletto, V., Blum, R., Babonneau, F., Amenitsch, H., &#38; Lindén, M. (2002). In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions. <i>Langmuir</i>, 10053–10057. <a href=\"https://doi.org/10.1021/la026473w\">https://doi.org/10.1021/la026473w</a>","ieee":"M. Tiemann, V. Goletto, R. Blum, F. Babonneau, H. Amenitsch, and M. Lindén, “In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions,” <i>Langmuir</i>, pp. 10053–10057, 2002, doi: <a href=\"https://doi.org/10.1021/la026473w\">10.1021/la026473w</a>."},"quality_controlled":"1","_id":"25998","page":"10053-10057","user_id":"23547","status":"public","date_created":"2021-10-09T09:50:51Z","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"type":"journal_article","publication":"Langmuir","abstract":[{"lang":"eng","text":"The formation of mesoscopically ordered silica/surfactant composites under acidic synthesis conditions is studied by time-resolved in-situ small-angle X-ray scattering (SAXS) using synchrotron radiation. Benzene is used a an additive which acts as a weak swelling agent although most of the benzene molecules are found to reside near the surfactant/silicate interface region rather than in the micelle cores. With increasing relative amounts of benzene, the curvature of the micellar aggregates decreases, which finally leads to a transition from (hexagonally) rodlike to lamellar; a mechanism for this change in curvature is suggested."}],"extern":"1","language":[{"iso":"eng"}],"doi":"10.1021/la026473w","publication_identifier":{"issn":["0743-7463","1520-5827"]},"author":[{"orcid":"0000-0003-1711-2722","last_name":"Tiemann","first_name":"Michael","full_name":"Tiemann, Michael","id":"23547"},{"full_name":"Goletto, Valérie","last_name":"Goletto","first_name":"Valérie"},{"full_name":"Blum, Raphaël","last_name":"Blum","first_name":"Raphaël"},{"first_name":"Florence","last_name":"Babonneau","full_name":"Babonneau, Florence"},{"last_name":"Amenitsch","first_name":"Heinz","full_name":"Amenitsch, Heinz"},{"last_name":"Lindén","first_name":"Mika","full_name":"Lindén, Mika"}],"title":"In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions","year":"2002","article_type":"original","date_updated":"2023-03-09T09:02:25Z","publication_status":"published"},{"page":"406-407","_id":"26001","user_id":"23547","status":"public","citation":{"apa":"Tiemann, M., &#38; Fröba, M. 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Mesoporous aluminophosphates from a single-source precursor. <i>Chemical Communications</i>. Published online 2002:406-407. doi:<a href=\"https://doi.org/10.1039/b110662g\">10.1039/b110662g</a>","bibtex":"@article{Tiemann_Fröba_2002, title={Mesoporous aluminophosphates from a single-source precursor}, DOI={<a href=\"https://doi.org/10.1039/b110662g\">10.1039/b110662g</a>}, journal={Chemical Communications}, author={Tiemann, Michael and Fröba, Michael}, year={2002}, pages={406–407} }"},"quality_controlled":"1","language":[{"iso":"eng"}],"doi":"10.1039/b110662g","title":"Mesoporous aluminophosphates from a single-source precursor","year":"2002","author":[{"first_name":"Michael","orcid":"0000-0003-1711-2722","last_name":"Tiemann","full_name":"Tiemann, Michael","id":"23547"},{"full_name":"Fröba, Michael","last_name":"Fröba","first_name":"Michael"}],"publication_identifier":{"issn":["1359-7345","1364-548X"]},"publication_status":"published","date_updated":"2023-03-09T09:03:25Z","article_type":"original","date_created":"2021-10-09T10:04:05Z","type":"journal_article","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"publication":"Chemical Communications","extern":"1","abstract":[{"text":"Mesoporous aluminophosphates with a strict ratio of Al∶P = 1∶1 have been synthesised from a single-source molecular precursor.","lang":"eng"}]},{"date_updated":"2023-03-09T09:05:27Z","intvolume":"        39","article_type":"original","title":"Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water","year":"2002","author":[{"full_name":"Backlund, Sune","first_name":"Sune","last_name":"Backlund"},{"full_name":"Friman, Rauno","first_name":"Rauno","last_name":"Friman"},{"full_name":"Karlsson, Stefan","last_name":"Karlsson","first_name":"Stefan"},{"full_name":"Tiemann, Michael","last_name":"Tiemann","orcid":"0000-0003-1711-2722","first_name":"Michael","id":"23547"}],"language":[{"iso":"eng"}],"abstract":[{"text":"Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water...","lang":"eng"}],"extern":"1","issue":"5","publication":"Tenside Surfactants Detergents","type":"journal_article","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"date_created":"2021-10-09T10:03:07Z","status":"public","user_id":"23547","volume":39,"page":"136-140","_id":"26000","quality_controlled":"1","citation":{"bibtex":"@article{Backlund_Friman_Karlsson_Tiemann_2002, title={Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water}, volume={39}, number={5}, journal={Tenside Surfactants Detergents}, author={Backlund, Sune and Friman, Rauno and Karlsson, Stefan and Tiemann, Michael}, year={2002}, pages={136–140} }","ama":"Backlund S, Friman R, Karlsson S, Tiemann M. 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Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water. <i>Tenside Surfactants Detergents</i>, <i>39</i>(5), 136–140."}},{"citation":{"bibtex":"@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }","ama":"Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>. 2002;15(1-4):633-636. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>","mla":"Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","chicago":"Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>.","short":"A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.","ieee":"A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","apa":"Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>"},"status":"public","_id":"39920","publisher":"Elsevier BV","page":"633-636","volume":15,"user_id":"20179","publication":"Microelectronic Engineering","issue":"1-4","date_created":"2023-01-25T09:29:53Z","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","publication_identifier":{"issn":["0167-9317"]},"author":[{"last_name":"Soennecken","first_name":"A.","full_name":"Soennecken, A."},{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"title":"Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica","year":"2002","intvolume":"        15","publication_status":"published","date_updated":"2023-03-21T09:47:17Z","language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(91)90299-s"},{"status":"public","user_id":"20179","volume":19,"page":"211-214","_id":"39915","publisher":"Elsevier BV","citation":{"mla":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","bibtex":"@article{Hilleringmann_Goser_2002, title={Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }","ama":"Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>. 2002;19(1-4):211-214. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>","ieee":"U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">10.1016/0167-9317(92)90425-q</a>.","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>","chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214."},"date_updated":"2023-03-21T09:49:09Z","publication_status":"published","intvolume":"        19","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","year":"2002","publication_identifier":{"issn":["0167-9317"]},"author":[{"last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"doi":"10.1016/0167-9317(92)90425-q","language":[{"iso":"eng"}],"issue":"1-4","publication":"Microelectronic Engineering","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"date_created":"2023-01-25T09:27:51Z"},{"citation":{"ieee":"S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 191–194, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","apa":"Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 191–194. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>","chicago":"Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 191–94. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>.","short":"S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.","mla":"Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","bibtex":"@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }","ama":"Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>"},"status":"public","_id":"39916","publisher":"Elsevier BV","page":"191-194","volume":19,"user_id":"20179","publication":"Microelectronic Engineering","issue":"1-4","date_created":"2023-01-25T09:28:16Z","department":[{"_id":"59"}],"type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"author":[{"last_name":"Adams","first_name":"S.","full_name":"Adams, S."},{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"publication_identifier":{"issn":["0167-9317"]},"year":"2002","title":"CMOS compatible micromachining by dry silicon-etching techniques","intvolume":"        19","date_updated":"2023-03-21T09:48:55Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(92)90420-v"},{"publication":"IEEE Transactions on Electron Devices","issue":"1","type":"journal_article","keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"date_created":"2023-01-24T09:23:56Z","date_updated":"2023-03-21T09:45:40Z","publication_status":"published","intvolume":"        45","year":"2002","title":"Matching analysis of deposition defined 50-nm MOSFET's","author":[{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."},{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"},{"first_name":"K.F.","last_name":"Goser","full_name":"Goser, K.F."}],"publication_identifier":{"issn":["0018-9383"]},"doi":"10.1109/16.658845","language":[{"iso":"eng"}],"citation":{"apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>","short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }"},"status":"public","user_id":"20179","volume":45,"page":"299-306","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","_id":"39348"}]