[{"date_created":"2023-03-06T04:04:45Z","place":"Vienna","department":[{"_id":"136"}],"type":"report","citation":{"bibtex":"@book{Fuchs_2002, place={Vienna}, title={Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper}, publisher={Vienna University of Technology}, author={Fuchs, Christian}, year={2002} }","ama":"Fuchs C. <i>Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna University of Technology; 2002.","mla":"Fuchs, Christian. <i>Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna University of Technology, 2002.","short":"C. Fuchs, Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper, Vienna University of Technology, Vienna, 2002.","chicago":"Fuchs, Christian. <i>Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna: Vienna University of Technology, 2002.","ieee":"C. Fuchs, <i>Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna: Vienna University of Technology, 2002.","apa":"Fuchs, C. (2002). <i>Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna University of Technology."},"extern":"1","language":[{"iso":"eng"}],"_id":"42745","publisher":"Vienna University of Technology","user_id":"49063","author":[{"id":"21863","first_name":"Christian","orcid":"0000-0003-0589-4579","last_name":"Fuchs","full_name":"Fuchs, Christian"}],"status":"public","title":"Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper","year":"2002","date_updated":"2023-03-08T06:41:27Z"},{"date_created":"2023-03-06T04:03:03Z","place":"Vienna","department":[{"_id":"136"}],"type":"report","citation":{"ama":"Fuchs C. <i>Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna University of Technology; 2002.","bibtex":"@book{Fuchs_2002, place={Vienna}, title={Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper}, publisher={Vienna University of Technology}, author={Fuchs, Christian}, year={2002} }","mla":"Fuchs, Christian. <i>Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna University of Technology, 2002.","short":"C. Fuchs, Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper, Vienna University of Technology, Vienna, 2002.","chicago":"Fuchs, Christian. <i>Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna: Vienna University of Technology, 2002.","apa":"Fuchs, C. (2002). <i>Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna University of Technology.","ieee":"C. Fuchs, <i>Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna: Vienna University of Technology, 2002."},"extern":"1","language":[{"iso":"eng"}],"_id":"42743","publisher":"Vienna University of Technology","user_id":"49063","author":[{"id":"21863","last_name":"Fuchs","orcid":"0000-0003-0589-4579","first_name":"Christian","full_name":"Fuchs, Christian"}],"status":"public","title":"Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper","year":"2002","date_updated":"2023-03-08T06:43:06Z"},{"type":"conference","department":[{"_id":"136"}],"date_created":"2023-02-24T04:06:02Z","place":"Vienna","extern":"1","publication":"Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research","citation":{"ieee":"C. Fuchs, “Social Information and Self-Organisation,” in <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research</i>, 2002, pp. 225–230.","apa":"Fuchs, C. (2002). Social Information and Self-Organisation. In R. Trappl (Ed.), <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research</i> (pp. 225–230). Austrian Society for Cybernetic Studies.","chicago":"Fuchs, Christian. “Social Information and Self-Organisation.” In <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research</i>, edited by Robert Trappl, 225–30. Vienna: Austrian Society for Cybernetic Studies, 2002.","short":"C. Fuchs, in: R. Trappl (Ed.), Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research, Austrian Society for Cybernetic Studies, Vienna, 2002, pp. 225–230.","mla":"Fuchs, Christian. “Social Information and Self-Organisation.” <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research</i>, edited by Robert Trappl, Austrian Society for Cybernetic Studies, 2002, pp. 225–30.","bibtex":"@inproceedings{Fuchs_2002, place={Vienna}, title={Social Information and Self-Organisation}, booktitle={Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research}, publisher={Austrian Society for Cybernetic Studies}, author={Fuchs, Christian}, editor={Trappl, Robert}, year={2002}, pages={225–230} }","ama":"Fuchs C. Social Information and Self-Organisation. In: Trappl R, ed. <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems Research</i>. Austrian Society for Cybernetic Studies; 2002:225-230."},"user_id":"49063","editor":[{"full_name":"Trappl, Robert","first_name":"Robert","last_name":"Trappl"}],"page":"225-230","publisher":"Austrian Society for Cybernetic Studies","_id":"42455","language":[{"iso":"eng"}],"date_updated":"2023-03-08T07:09:41Z","year":"2002","title":"Social Information and Self-Organisation","status":"public","author":[{"id":"21863","full_name":"Fuchs, Christian","last_name":"Fuchs","orcid":"0000-0003-0589-4579","first_name":"Christian"}]},{"department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"type":"journal_article","date_created":"2021-10-09T09:50:51Z","abstract":[{"text":"The formation of mesoscopically ordered silica/surfactant composites under acidic synthesis conditions is studied by time-resolved in-situ small-angle X-ray scattering (SAXS) using synchrotron radiation. Benzene is used a an additive which acts as a weak swelling agent although most of the benzene molecules are found to reside near the surfactant/silicate interface region rather than in the micelle cores. With increasing relative amounts of benzene, the curvature of the micellar aggregates decreases, which finally leads to a transition from (hexagonally) rodlike to lamellar; a mechanism for this change in curvature is suggested.","lang":"eng"}],"extern":"1","publication":"Langmuir","doi":"10.1021/la026473w","language":[{"iso":"eng"}],"article_type":"original","date_updated":"2023-03-09T09:02:25Z","publication_status":"published","publication_identifier":{"issn":["0743-7463","1520-5827"]},"author":[{"orcid":"0000-0003-1711-2722","last_name":"Tiemann","first_name":"Michael","full_name":"Tiemann, Michael","id":"23547"},{"full_name":"Goletto, Valérie","first_name":"Valérie","last_name":"Goletto"},{"full_name":"Blum, Raphaël","first_name":"Raphaël","last_name":"Blum"},{"full_name":"Babonneau, Florence","last_name":"Babonneau","first_name":"Florence"},{"full_name":"Amenitsch, Heinz","first_name":"Heinz","last_name":"Amenitsch"},{"first_name":"Mika","last_name":"Lindén","full_name":"Lindén, Mika"}],"year":"2002","title":"In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions","quality_controlled":"1","citation":{"ieee":"M. Tiemann, V. Goletto, R. Blum, F. Babonneau, H. Amenitsch, and M. Lindén, “In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions,” <i>Langmuir</i>, pp. 10053–10057, 2002, doi: <a href=\"https://doi.org/10.1021/la026473w\">10.1021/la026473w</a>.","apa":"Tiemann, M., Goletto, V., Blum, R., Babonneau, F., Amenitsch, H., &#38; Lindén, M. (2002). In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions. <i>Langmuir</i>, 10053–10057. <a href=\"https://doi.org/10.1021/la026473w\">https://doi.org/10.1021/la026473w</a>","short":"M. Tiemann, V. Goletto, R. Blum, F. Babonneau, H. Amenitsch, M. Lindén, Langmuir (2002) 10053–10057.","chicago":"Tiemann, Michael, Valérie Goletto, Raphaël Blum, Florence Babonneau, Heinz Amenitsch, and Mika Lindén. “In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions.” <i>Langmuir</i>, 2002, 10053–57. <a href=\"https://doi.org/10.1021/la026473w\">https://doi.org/10.1021/la026473w</a>.","mla":"Tiemann, Michael, et al. “In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions.” <i>Langmuir</i>, 2002, pp. 10053–57, doi:<a href=\"https://doi.org/10.1021/la026473w\">10.1021/la026473w</a>.","bibtex":"@article{Tiemann_Goletto_Blum_Babonneau_Amenitsch_Lindén_2002, title={In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions}, DOI={<a href=\"https://doi.org/10.1021/la026473w\">10.1021/la026473w</a>}, journal={Langmuir}, author={Tiemann, Michael and Goletto, Valérie and Blum, Raphaël and Babonneau, Florence and Amenitsch, Heinz and Lindén, Mika}, year={2002}, pages={10053–10057} }","ama":"Tiemann M, Goletto V, Blum R, Babonneau F, Amenitsch H, Lindén M. In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene under Acidic Conditions. <i>Langmuir</i>. Published online 2002:10053-10057. doi:<a href=\"https://doi.org/10.1021/la026473w\">10.1021/la026473w</a>"},"user_id":"23547","_id":"25998","page":"10053-10057","status":"public"},{"date_updated":"2023-03-09T09:03:25Z","publication_status":"published","article_type":"original","year":"2002","title":"Mesoporous aluminophosphates from a single-source precursor","publication_identifier":{"issn":["1359-7345","1364-548X"]},"author":[{"id":"23547","first_name":"Michael","orcid":"0000-0003-1711-2722","last_name":"Tiemann","full_name":"Tiemann, Michael"},{"full_name":"Fröba, Michael","first_name":"Michael","last_name":"Fröba"}],"doi":"10.1039/b110662g","language":[{"iso":"eng"}],"abstract":[{"text":"Mesoporous aluminophosphates with a strict ratio of Al∶P = 1∶1 have been synthesised from a single-source molecular precursor.","lang":"eng"}],"extern":"1","publication":"Chemical Communications","type":"journal_article","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"date_created":"2021-10-09T10:04:05Z","status":"public","user_id":"23547","page":"406-407","_id":"26001","quality_controlled":"1","citation":{"chicago":"Tiemann, Michael, and Michael Fröba. “Mesoporous Aluminophosphates from a Single-Source Precursor.” <i>Chemical Communications</i>, 2002, 406–7. <a href=\"https://doi.org/10.1039/b110662g\">https://doi.org/10.1039/b110662g</a>.","short":"M. Tiemann, M. Fröba, Chemical Communications (2002) 406–407.","apa":"Tiemann, M., &#38; Fröba, M. (2002). Mesoporous aluminophosphates from a single-source precursor. <i>Chemical Communications</i>, 406–407. <a href=\"https://doi.org/10.1039/b110662g\">https://doi.org/10.1039/b110662g</a>","ieee":"M. Tiemann and M. Fröba, “Mesoporous aluminophosphates from a single-source precursor,” <i>Chemical Communications</i>, pp. 406–407, 2002, doi: <a href=\"https://doi.org/10.1039/b110662g\">10.1039/b110662g</a>.","ama":"Tiemann M, Fröba M. Mesoporous aluminophosphates from a single-source precursor. <i>Chemical Communications</i>. Published online 2002:406-407. doi:<a href=\"https://doi.org/10.1039/b110662g\">10.1039/b110662g</a>","bibtex":"@article{Tiemann_Fröba_2002, title={Mesoporous aluminophosphates from a single-source precursor}, DOI={<a href=\"https://doi.org/10.1039/b110662g\">10.1039/b110662g</a>}, journal={Chemical Communications}, author={Tiemann, Michael and Fröba, Michael}, year={2002}, pages={406–407} }","mla":"Tiemann, Michael, and Michael Fröba. “Mesoporous Aluminophosphates from a Single-Source Precursor.” <i>Chemical Communications</i>, 2002, pp. 406–07, doi:<a href=\"https://doi.org/10.1039/b110662g\">10.1039/b110662g</a>."}},{"quality_controlled":"1","citation":{"ama":"Backlund S, Friman R, Karlsson S, Tiemann M. Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water. <i>Tenside Surfactants Detergents</i>. 2002;39(5):136-140.","bibtex":"@article{Backlund_Friman_Karlsson_Tiemann_2002, title={Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water}, volume={39}, number={5}, journal={Tenside Surfactants Detergents}, author={Backlund, Sune and Friman, Rauno and Karlsson, Stefan and Tiemann, Michael}, year={2002}, pages={136–140} }","mla":"Backlund, Sune, et al. “Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water.” <i>Tenside Surfactants Detergents</i>, vol. 39, no. 5, 2002, pp. 136–40.","short":"S. Backlund, R. Friman, S. Karlsson, M. Tiemann, Tenside Surfactants Detergents 39 (2002) 136–140.","chicago":"Backlund, Sune, Rauno Friman, Stefan Karlsson, and Michael Tiemann. “Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water.” <i>Tenside Surfactants Detergents</i> 39, no. 5 (2002): 136–40.","apa":"Backlund, S., Friman, R., Karlsson, S., &#38; Tiemann, M. (2002). Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water. <i>Tenside Surfactants Detergents</i>, <i>39</i>(5), 136–140.","ieee":"S. Backlund, R. Friman, S. Karlsson, and M. Tiemann, “Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water,” <i>Tenside Surfactants Detergents</i>, vol. 39, no. 5, pp. 136–140, 2002."},"user_id":"23547","volume":39,"page":"136-140","_id":"26000","status":"public","type":"journal_article","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"date_created":"2021-10-09T10:03:07Z","extern":"1","abstract":[{"lang":"eng","text":"Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water..."}],"issue":"5","publication":"Tenside Surfactants Detergents","language":[{"iso":"eng"}],"date_updated":"2023-03-09T09:05:27Z","article_type":"original","intvolume":"        39","title":"Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water","year":"2002","author":[{"last_name":"Backlund","first_name":"Sune","full_name":"Backlund, Sune"},{"full_name":"Friman, Rauno","last_name":"Friman","first_name":"Rauno"},{"first_name":"Stefan","last_name":"Karlsson","full_name":"Karlsson, Stefan"},{"id":"23547","last_name":"Tiemann","orcid":"0000-0003-1711-2722","first_name":"Michael","full_name":"Tiemann, Michael"}]},{"status":"public","page":"633-636","_id":"39920","publisher":"Elsevier BV","user_id":"20179","volume":15,"citation":{"short":"A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15 (2002) 633–636.","chicago":"Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>.","ieee":"A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>.","apa":"Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">https://doi.org/10.1016/0167-9317(91)90299-s</a>","bibtex":"@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica}, volume={15}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={633–636} }","ama":"Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic Engineering</i>. 2002;15(1-4):633-636. doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>","mla":"Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href=\"https://doi.org/10.1016/0167-9317(91)90299-s\">10.1016/0167-9317(91)90299-s</a>."},"title":"Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica","year":"2002","publication_identifier":{"issn":["0167-9317"]},"author":[{"last_name":"Soennecken","first_name":"A.","full_name":"Soennecken, A."},{"full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann","id":"20179"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"publication_status":"published","date_updated":"2023-03-21T09:47:17Z","intvolume":"        15","language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(91)90299-s","issue":"1-4","publication":"Microelectronic Engineering","date_created":"2023-01-25T09:29:53Z","type":"journal_article","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}]},{"language":[{"iso":"eng"}],"doi":"10.1016/0167-9317(92)90425-q","year":"2002","title":"Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon","publication_identifier":{"issn":["0167-9317"]},"author":[{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."}],"publication_status":"published","date_updated":"2023-03-21T09:49:09Z","intvolume":"        19","date_created":"2023-01-25T09:27:51Z","keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"issue":"1-4","publication":"Microelectronic Engineering","page":"211-214","_id":"39915","publisher":"Elsevier BV","user_id":"20179","volume":19,"status":"public","citation":{"chicago":"Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 211–14. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>.","short":"U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.","apa":"Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 211–214. <a href=\"https://doi.org/10.1016/0167-9317(92)90425-q\">https://doi.org/10.1016/0167-9317(92)90425-q</a>","ieee":"U. Hilleringmann and K. 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Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>."},"volume":53,"user_id":"20179","publisher":"Elsevier BV","_id":"39877","page":"569-572","status":"public","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","date_created":"2023-01-25T09:08:13Z","issue":"1-4","publication":"Microelectronic Engineering","doi":"10.1016/s0167-9317(00)00380-4","language":[{"iso":"eng"}],"intvolume":"        53","publication_status":"published","date_updated":"2023-03-21T10:03:00Z","author":[{"last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179"},{"first_name":"T.","last_name":"Vieregge","full_name":"Vieregge, T."},{"full_name":"Horstmann, J.T.","first_name":"J.T.","last_name":"Horstmann"}],"publication_identifier":{"issn":["0167-9317"]},"title":"A structure definition technique for 25 nm lines of silicon and related materials","year":"2002"},{"citation":{"ama":"Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>","bibtex":"@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}, volume={11}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>}, number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844} }","mla":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","short":"R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.","chicago":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11, no. 3–6 (2002): 841–44. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.","apa":"Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6), 841–844. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>","ieee":"R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, pp. 841–844, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>."},"status":"public","user_id":"20179","volume":11,"page":"841-844","_id":"39874","publisher":"Elsevier BV","publication":"Diamond and Related Materials","issue":"3-6","keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"59"}],"date_created":"2023-01-25T09:05:52Z","publication_status":"published","date_updated":"2023-03-21T10:03:48Z","intvolume":"        11","title":"Reactive ion etching of CVD-diamond for piezoresistive pressure sensors","year":"2002","author":[{"full_name":"Otterbach, R.","last_name":"Otterbach","first_name":"R."},{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"}],"publication_identifier":{"issn":["0925-9635"]},"doi":"10.1016/s0925-9635(01)00703-8","language":[{"iso":"eng"}]},{"date_updated":"2023-03-21T10:03:35Z","author":[{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"}],"publication_identifier":{"isbn":["978-3-322-94119-0"]},"year":"2002","status":"public","title":"Metallisierung und Kontakte","user_id":"20179","doi":"10.1007/978-3-322-94119-0_8","language":[{"iso":"eng"}],"_id":"39875","publisher":"Vieweg+Teubner Verlag","page":"131–151","abstract":[{"lang":"eng","text":"Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen."}],"citation":{"bibtex":"@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und Kontakte}, DOI={<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>}, booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag}, author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }","ama":"Hilleringmann U. Metallisierung und Kontakte. In: <i>Silizium-Halbleitertechnologie</i>. Vieweg+Teubner Verlag; 2002:131–151. doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>","mla":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>, Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>.","short":"U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2002, pp. 131–151.","chicago":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” In <i>Silizium-Halbleitertechnologie</i>, 131–151. Wiesbaden: Vieweg+Teubner Verlag, 2002. <a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">https://doi.org/10.1007/978-3-322-94119-0_8</a>.","ieee":"U. Hilleringmann, “Metallisierung und Kontakte,” in <i>Silizium-Halbleitertechnologie</i>, Wiesbaden: Vieweg+Teubner Verlag, 2002, pp. 131–151.","apa":"Hilleringmann, U. (2002). Metallisierung und Kontakte. In <i>Silizium-Halbleitertechnologie</i> (pp. 131–151). Vieweg+Teubner Verlag. <a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">https://doi.org/10.1007/978-3-322-94119-0_8</a>"},"publication":"Silizium-Halbleitertechnologie","department":[{"_id":"59"}],"type":"book_chapter","date_created":"2023-01-25T09:06:58Z","place":"Wiesbaden"},{"extern":"1","abstract":[{"lang":"eng","text":"A microscopic many-body theory describing the optical and electronic properties of semiconductors and semiconductor nanostructures is briefly reviewed. At the semiclassical level, the optical response is computed using Maxwell's equations together with the semiconductor Bloch equations which describe the dynamics of the diagonal and the off-diagonal terms of the reduced single-particle density matrix. These equations include the coupling between the semiconductor and the optical field as well as Coulomb many-body interactions among the optically excited carriers. Under quasi-equilibrium conditions, luminescence spectra can be obtained from absorption spectra on the basis of the Kubo–Martin–Schwinger relation for conditions usually limited to the regime of optical gain (lasers). More generally, light emission has to be computed at a fully quantum mechanical level leading to semiconductor luminescence equations."}],"publication":"Physica E: Low-Dimensional Systems and Nanostructures","issue":"1-2","type":"journal_article","department":[{"_id":"293"}],"date_created":"2023-04-02T13:31:23Z","publication_status":"published","date_updated":"2023-04-02T13:31:25Z","intvolume":"        14","title":"Theory of the optical properties of semiconductor nanostructures","year":"2002","author":[{"full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten","id":"344"},{"full_name":"Koch, S.W.","first_name":"S.W.","last_name":"Koch"},{"last_name":"Hoyer","first_name":"W.","full_name":"Hoyer, W."},{"full_name":"Kira, M.","last_name":"Kira","first_name":"M."}],"doi":"10.1016/S1386-9477(02)00358-2","main_file_link":[{"url":"https://www.sciencedirect.com/science/article/abs/pii/S1386947702003582","open_access":"1"}],"language":[{"iso":"eng"}],"citation":{"ama":"Meier T, Koch SW, Hoyer W, Kira M. Theory of the optical properties of semiconductor nanostructures. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>. 2002;14(1-2):45-52. doi:<a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">10.1016/S1386-9477(02)00358-2</a>","bibtex":"@article{Meier_Koch_Hoyer_Kira_2002, title={Theory of the optical properties of semiconductor nanostructures}, volume={14}, DOI={<a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">10.1016/S1386-9477(02)00358-2</a>}, number={1–2}, journal={Physica E: Low-Dimensional Systems and Nanostructures}, publisher={North-Holland}, author={Meier, Torsten and Koch, S.W. and Hoyer, W. and Kira, M.}, year={2002}, pages={45–52} }","mla":"Meier, Torsten, et al. “Theory of the Optical Properties of Semiconductor Nanostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 14, no. 1–2, North-Holland, 2002, pp. 45–52, doi:<a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">10.1016/S1386-9477(02)00358-2</a>.","short":"T. Meier, S.W. Koch, W. Hoyer, M. Kira, Physica E: Low-Dimensional Systems and Nanostructures 14 (2002) 45–52.","chicago":"Meier, Torsten, S.W. Koch, W. Hoyer, and M. Kira. “Theory of the Optical Properties of Semiconductor Nanostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 14, no. 1–2 (2002): 45–52. <a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">https://doi.org/10.1016/S1386-9477(02)00358-2</a>.","apa":"Meier, T., Koch, S. W., Hoyer, W., &#38; Kira, M. (2002). Theory of the optical properties of semiconductor nanostructures. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>14</i>(1–2), 45–52. <a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">https://doi.org/10.1016/S1386-9477(02)00358-2</a>","ieee":"T. Meier, S. W. Koch, W. Hoyer, and M. Kira, “Theory of the optical properties of semiconductor nanostructures,” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 14, no. 1–2, pp. 45–52, 2002, doi: <a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">10.1016/S1386-9477(02)00358-2</a>."},"oa":"1","status":"public","user_id":"49063","volume":14,"page":"45-52","publisher":"North-Holland","_id":"43297"},{"doi":"10.1002/1521-396X(200204)190:3<843::AID-PSSA843>3.0.CO;2-B","language":[{"iso":"eng"}],"main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/abs/10.1002/1521-396X(200204)190:3%3C843::AID-PSSA843%3E3.0.CO;2-B"}],"intvolume":"       190","publication_status":"published","date_updated":"2023-04-02T13:28:58Z","author":[{"id":"344","first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten"},{"full_name":"Wagner, H.P.","first_name":"H.P.","last_name":"Wagner"},{"first_name":"H.-P.","last_name":"Tranitz","full_name":"Tranitz, H.-P."},{"last_name":"Reichelt","first_name":"Matthias","full_name":"Reichelt, Matthias","id":"138"},{"full_name":"Koch, S.W.","first_name":"S.W.","last_name":"Koch"}],"title":"Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations","year":"2002","department":[{"_id":"293"}],"type":"journal_article","date_created":"2023-04-02T13:28:56Z","extern":"1","abstract":[{"lang":"eng","text":"A three-beam configuration is used to investigate the spectrally resolved wave-mixing signal of a ZnSe single quantum well. The spectrum recorded in direction 2 k2–k1 shows coherent oscillations induced by a delayed third pulse with direction k3. Intensity and polarization-dependent measurements indicate that the signal is generated by a combination of four- and six-wave mixing. The origin of the oscillations can be explained qualitatively by a two-level model. The polarization-dependent experimental results require the treatment of many-body correlations and are well explained by microscopic calculations including four-particle correlations up to fifth order in the fields."}],"issue":"3","publication":"physica status solidi (a)","volume":190,"user_id":"49063","_id":"43296","publisher":"WILEY‐VCH Verlag Berlin GmbH","page":"843-847","status":"public","citation":{"bibtex":"@article{Meier_Wagner_Tranitz_Reichelt_Koch_2002, title={Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations}, volume={190}, DOI={<a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>}, number={3}, journal={physica status solidi (a)}, publisher={WILEY‐VCH Verlag Berlin GmbH}, author={Meier, Torsten and Wagner, H.P. and Tranitz, H.-P. and Reichelt, Matthias and Koch, S.W.}, year={2002}, pages={843–847} }","ama":"Meier T, Wagner HP, Tranitz H-P, Reichelt M, Koch SW. Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations. <i>physica status solidi (a)</i>. 2002;190(3):843-847. doi:<a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>","mla":"Meier, Torsten, et al. “Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations.” <i>Physica Status Solidi (a)</i>, vol. 190, no. 3, WILEY‐VCH Verlag Berlin GmbH, 2002, pp. 843–47, doi:<a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.","chicago":"Meier, Torsten, H.P. Wagner, H.-P. Tranitz, Matthias Reichelt, and S.W. Koch. “Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations.” <i>Physica Status Solidi (a)</i> 190, no. 3 (2002): 843–47. <a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.","short":"T. Meier, H.P. Wagner, H.-P. Tranitz, M. Reichelt, S.W. Koch, Physica Status Solidi (a) 190 (2002) 843–847.","ieee":"T. Meier, H. P. Wagner, H.-P. Tranitz, M. Reichelt, and S. W. Koch, “Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations,” <i>physica status solidi (a)</i>, vol. 190, no. 3, pp. 843–847, 2002, doi: <a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.","apa":"Meier, T., Wagner, H. P., Tranitz, H.-P., Reichelt, M., &#38; Koch, S. W. (2002). Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations. <i>Physica Status Solidi (a)</i>, <i>190</i>(3), 843–847. <a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>"}}]