[{"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"39916","department":[{"_id":"59"}],"user_id":"20179","status":"public","publication":"Microelectronic Engineering","type":"journal_article","title":"CMOS compatible micromachining by dry silicon-etching techniques","doi":"10.1016/0167-9317(92)90420-v","publisher":"Elsevier BV","date_updated":"2023-03-21T09:48:55Z","volume":19,"date_created":"2023-01-25T09:28:16Z","author":[{"full_name":"Adams, S.","last_name":"Adams","first_name":"S."},{"last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179","first_name":"Ulrich"},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"year":"2002","page":"191-194","intvolume":"        19","citation":{"bibtex":"@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining by dry silicon-etching techniques}, volume={19}, DOI={<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194} }","short":"S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 191–194.","mla":"Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94, doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>.","apa":"Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4), 191–194. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>","ama":"Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>","chicago":"Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no. 1–4 (2002): 191–94. <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">https://doi.org/10.1016/0167-9317(92)90420-v</a>.","ieee":"S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, pp. 191–194, 2002, doi: <a href=\"https://doi.org/10.1016/0167-9317(92)90420-v\">10.1016/0167-9317(92)90420-v</a>."},"publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","issue":"1-4"},{"_id":"39348","user_id":"20179","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"type":"journal_article","publication":"IEEE Transactions on Electron Devices","status":"public","publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:45:40Z","author":[{"first_name":"J.T.","last_name":"Horstmann","full_name":"Horstmann, J.T."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"full_name":"Goser, K.F.","last_name":"Goser","first_name":"K.F."}],"date_created":"2023-01-24T09:23:56Z","volume":45,"title":"Matching analysis of deposition defined 50-nm MOSFET's","doi":"10.1109/16.658845","publication_status":"published","publication_identifier":{"issn":["0018-9383"]},"issue":"1","year":"2002","citation":{"short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>","ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>."},"page":"299-306","intvolume":"        45"},{"publication":"[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications","type":"conference","status":"public","department":[{"_id":"59"}],"user_id":"20179","_id":"39923","language":[{"iso":"eng"}],"publication_status":"published","citation":{"chicago":"Goser, K., Ulrich Hilleringmann, and U. Rueckert. “Applications and Implementations of Neural Networks in Microelectronics-Overview and Status.” In <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput. Soc. Press, 2002. <a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">https://doi.org/10.1109/cmpeur.1991.257442</a>.","ieee":"K. Goser, U. Hilleringmann, and U. Rueckert, “Applications and implementations of neural networks in microelectronics-overview and status,” 2002, doi: <a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>.","ama":"Goser K, Hilleringmann U, Rueckert U. Applications and implementations of neural networks in microelectronics-overview and status. In: <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput. Soc. Press; 2002. doi:<a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>","bibtex":"@inproceedings{Goser_Hilleringmann_Rueckert_2002, title={Applications and implementations of neural networks in microelectronics-overview and status}, DOI={<a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>}, booktitle={[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications}, publisher={IEEE Comput. Soc. Press}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.}, year={2002} }","mla":"Goser, K., et al. “Applications and Implementations of Neural Networks in Microelectronics-Overview and Status.” <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>, IEEE Comput. Soc. Press, 2002, doi:<a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">10.1109/cmpeur.1991.257442</a>.","short":"K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press, 2002.","apa":"Goser, K., Hilleringmann, U., &#38; Rueckert, U. (2002). Applications and implementations of neural networks in microelectronics-overview and status. <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications</i>. <a href=\"https://doi.org/10.1109/cmpeur.1991.257442\">https://doi.org/10.1109/cmpeur.1991.257442</a>"},"year":"2002","author":[{"first_name":"K.","last_name":"Goser","full_name":"Goser, K."},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"last_name":"Rueckert","full_name":"Rueckert, U.","first_name":"U."}],"date_created":"2023-01-25T09:31:42Z","date_updated":"2023-03-21T09:46:40Z","publisher":"IEEE Comput. Soc. Press","doi":"10.1109/cmpeur.1991.257442","title":"Applications and implementations of neural networks in microelectronics-overview and status"},{"user_id":"20179","department":[{"_id":"59"}],"_id":"39889","type":"journal_article","status":"public","author":[{"last_name":"Mankowski","full_name":"Mankowski, V.","first_name":"V."},{"first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann"},{"last_name":"Schumacher","full_name":"Schumacher, K.","first_name":"K."}],"volume":46,"date_updated":"2023-03-21T09:58:35Z","doi":"10.1016/s0167-9317(99)00122-7","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"citation":{"ama":"Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417. doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>","chicago":"Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i> 46, no. 1–4 (2002): 413–17. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.","ieee":"V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>.","apa":"Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>, <i>46</i>(1–4), 413–417. <a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">https://doi.org/10.1016/s0167-9317(99)00122-7</a>","short":"V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering 46 (2002) 413–417.","bibtex":"@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002}, pages={413–417} }","mla":"Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier BV, 2002, pp. 413–17, doi:<a href=\"https://doi.org/10.1016/s0167-9317(99)00122-7\">10.1016/s0167-9317(99)00122-7</a>."},"page":"413-417","intvolume":"        46","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"publication":"Microelectronic Engineering","date_created":"2023-01-25T09:13:17Z","publisher":"Elsevier BV","title":"12 kV low current cascaded light triggered switch on one silicon chip","issue":"1-4","year":"2002"},{"user_id":"20179","department":[{"_id":"59"}],"_id":"39891","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Electronic","Optical and Magnetic Materials"],"type":"journal_article","publication":"IEEE Transactions on Electron Devices","status":"public","date_created":"2023-01-25T09:14:43Z","author":[{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"},{"full_name":"Goser, K.F.","last_name":"Goser","first_name":"K.F."}],"volume":45,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","date_updated":"2023-03-21T09:58:01Z","doi":"10.1109/16.658845","title":"Matching analysis of deposition defined 50-nm MOSFET's","issue":"1","publication_status":"published","publication_identifier":{"issn":["0018-9383"]},"citation":{"ama":"Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306. doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>","chicago":"Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i> 45, no. 1 (2002): 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>.","ieee":"J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, pp. 299–306, 2002, doi: <a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","mla":"Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>.","short":"J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron Devices 45 (2002) 299–306.","bibtex":"@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href=\"https://doi.org/10.1109/16.658845\">10.1109/16.658845</a>}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }","apa":"Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>, <i>45</i>(1), 299–306. <a href=\"https://doi.org/10.1109/16.658845\">https://doi.org/10.1109/16.658845</a>"},"intvolume":"        45","page":"299-306","year":"2002"},{"language":[{"iso":"eng"}],"keyword":["Materials Chemistry","Electrical and Electronic Engineering","Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"59"}],"user_id":"20179","_id":"39886","status":"public","publication":"Solid-State Electronics","type":"journal_article","doi":"10.1016/s0038-1101(99)00060-x","title":"Mesoscopic transport phenomena in ultrashort channel MOSFETs","volume":43,"date_created":"2023-01-25T09:11:50Z","author":[{"first_name":"G","last_name":"Wirth","full_name":"Wirth, G"},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"first_name":"J.T","last_name":"Horstmann","full_name":"Horstmann, J.T"},{"last_name":"Goser","full_name":"Goser, K","first_name":"K"}],"publisher":"Elsevier BV","date_updated":"2023-03-21T09:59:22Z","intvolume":"        43","page":"1245-1250","citation":{"ieee":"G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol. 43, no. 7, pp. 1245–1250, 2002, doi: <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","chicago":"Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i> 43, no. 7 (2002): 1245–50. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.","ama":"Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250. doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>","apa":"Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>, <i>43</i>(7), 1245–1250. <a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">https://doi.org/10.1016/s0038-1101(99)00060-x</a>","bibtex":"@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>}, number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth, G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250} }","mla":"Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50, doi:<a href=\"https://doi.org/10.1016/s0038-1101(99)00060-x\">10.1016/s0038-1101(99)00060-x</a>.","short":"G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics 43 (2002) 1245–1250."},"year":"2002","issue":"7","publication_identifier":{"issn":["0038-1101"]},"publication_status":"published"},{"publisher":"Elsevier BV","date_updated":"2023-03-21T10:03:16Z","author":[{"last_name":"Otterbach","full_name":"Otterbach, R.","first_name":"R."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"},{"first_name":"T.J.","last_name":"Horstmann","full_name":"Horstmann, T.J."},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"date_created":"2023-01-25T09:07:37Z","volume":10,"title":"Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications","doi":"10.1016/s0925-9635(01)00373-9","publication_status":"published","publication_identifier":{"issn":["0925-9635"]},"issue":"3-7","year":"2002","citation":{"chicago":"Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">https://doi.org/10.1016/s0925-9635(01)00373-9</a>.","ieee":"R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,” <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>.","ama":"Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>","mla":"Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>.","short":"R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514.","bibtex":"@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications}, volume={10}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">10.1016/s0925-9635(01)00373-9</a>}, number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser, K.}, year={2002}, pages={511–514} }","apa":"Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002). Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514. <a href=\"https://doi.org/10.1016/s0925-9635(01)00373-9\">https://doi.org/10.1016/s0925-9635(01)00373-9</a>"},"intvolume":"        10","page":"511-514","_id":"39876","user_id":"20179","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Diamond and Related Materials","status":"public"},{"publisher":"Elsevier BV","date_updated":"2023-03-21T10:03:00Z","date_created":"2023-01-25T09:08:13Z","author":[{"first_name":"Ulrich","last_name":"Hilleringmann","id":"20179","full_name":"Hilleringmann, Ulrich"},{"first_name":"T.","last_name":"Vieregge","full_name":"Vieregge, T."},{"last_name":"Horstmann","full_name":"Horstmann, J.T.","first_name":"J.T."}],"volume":53,"title":"A structure definition technique for 25 nm lines of silicon and related materials","doi":"10.1016/s0167-9317(00)00380-4","publication_status":"published","publication_identifier":{"issn":["0167-9317"]},"issue":"1-4","year":"2002","citation":{"ama":"Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>. 2002;53(1-4):569-572. doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>","ieee":"U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition technique for 25 nm lines of silicon and related materials,” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","chicago":"Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 569–72. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.","short":"U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.","bibtex":"@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>}, number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002}, pages={569–572} }","mla":"Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53, no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">10.1016/s0167-9317(00)00380-4</a>.","apa":"Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 569–572. <a href=\"https://doi.org/10.1016/s0167-9317(00)00380-4\">https://doi.org/10.1016/s0167-9317(00)00380-4</a>"},"intvolume":"        53","page":"569-572","_id":"39877","user_id":"20179","department":[{"_id":"59"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Microelectronic Engineering","status":"public"},{"_id":"39874","user_id":"20179","department":[{"_id":"59"}],"status":"public","type":"journal_article","doi":"10.1016/s0925-9635(01)00703-8","date_updated":"2023-03-21T10:03:48Z","author":[{"first_name":"R.","full_name":"Otterbach, R.","last_name":"Otterbach"},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"}],"volume":11,"citation":{"bibtex":"@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond for piezoresistive pressure sensors}, volume={11}, DOI={<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>}, number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV}, author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844} }","mla":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","short":"R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.","apa":"Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6), 841–844. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>","ieee":"R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11, no. 3–6, pp. 841–844, 2002, doi: <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>.","chicago":"Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11, no. 3–6 (2002): 841–44. <a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.","ama":"Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844. doi:<a href=\"https://doi.org/10.1016/s0925-9635(01)00703-8\">10.1016/s0925-9635(01)00703-8</a>"},"page":"841-844","intvolume":"        11","publication_status":"published","publication_identifier":{"issn":["0925-9635"]},"keyword":["Electrical and Electronic Engineering","Materials Chemistry","Mechanical Engineering","General Chemistry","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"publication":"Diamond and Related Materials","title":"Reactive ion etching of CVD-diamond for piezoresistive pressure sensors","publisher":"Elsevier BV","date_created":"2023-01-25T09:05:52Z","year":"2002","issue":"3-6"},{"date_created":"2023-01-25T09:06:58Z","author":[{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"}],"date_updated":"2023-03-21T10:03:35Z","publisher":"Vieweg+Teubner Verlag","doi":"10.1007/978-3-322-94119-0_8","title":"Metallisierung und Kontakte","publication_identifier":{"isbn":["978-3-322-94119-0"]},"citation":{"apa":"Hilleringmann, U. (2002). Metallisierung und Kontakte. In <i>Silizium-Halbleitertechnologie</i> (pp. 131–151). Vieweg+Teubner Verlag. <a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">https://doi.org/10.1007/978-3-322-94119-0_8</a>","short":"U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2002, pp. 131–151.","bibtex":"@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und Kontakte}, DOI={<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>}, booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag}, author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }","mla":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>, Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>.","chicago":"Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” In <i>Silizium-Halbleitertechnologie</i>, 131–151. Wiesbaden: Vieweg+Teubner Verlag, 2002. <a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">https://doi.org/10.1007/978-3-322-94119-0_8</a>.","ieee":"U. Hilleringmann, “Metallisierung und Kontakte,” in <i>Silizium-Halbleitertechnologie</i>, Wiesbaden: Vieweg+Teubner Verlag, 2002, pp. 131–151.","ama":"Hilleringmann U. Metallisierung und Kontakte. In: <i>Silizium-Halbleitertechnologie</i>. Vieweg+Teubner Verlag; 2002:131–151. doi:<a href=\"https://doi.org/10.1007/978-3-322-94119-0_8\">10.1007/978-3-322-94119-0_8</a>"},"page":"131–151","place":"Wiesbaden","year":"2002","user_id":"20179","department":[{"_id":"59"}],"_id":"39875","language":[{"iso":"eng"}],"type":"book_chapter","publication":"Silizium-Halbleitertechnologie","status":"public","abstract":[{"lang":"eng","text":"Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen."}]},{"year":"2002","issue":"1-2","title":"Theory of the optical properties of semiconductor nanostructures","publisher":"North-Holland","date_created":"2023-04-02T13:31:23Z","abstract":[{"text":"A microscopic many-body theory describing the optical and electronic properties of semiconductors and semiconductor nanostructures is briefly reviewed. At the semiclassical level, the optical response is computed using Maxwell's equations together with the semiconductor Bloch equations which describe the dynamics of the diagonal and the off-diagonal terms of the reduced single-particle density matrix. These equations include the coupling between the semiconductor and the optical field as well as Coulomb many-body interactions among the optically excited carriers. Under quasi-equilibrium conditions, luminescence spectra can be obtained from absorption spectra on the basis of the Kubo–Martin–Schwinger relation for conditions usually limited to the regime of optical gain (lasers). More generally, light emission has to be computed at a fully quantum mechanical level leading to semiconductor luminescence equations.","lang":"eng"}],"publication":"Physica E: Low-Dimensional Systems and Nanostructures","language":[{"iso":"eng"}],"intvolume":"        14","page":"45-52","citation":{"mla":"Meier, Torsten, et al. “Theory of the Optical Properties of Semiconductor Nanostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 14, no. 1–2, North-Holland, 2002, pp. 45–52, doi:<a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">10.1016/S1386-9477(02)00358-2</a>.","bibtex":"@article{Meier_Koch_Hoyer_Kira_2002, title={Theory of the optical properties of semiconductor nanostructures}, volume={14}, DOI={<a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">10.1016/S1386-9477(02)00358-2</a>}, number={1–2}, journal={Physica E: Low-Dimensional Systems and Nanostructures}, publisher={North-Holland}, author={Meier, Torsten and Koch, S.W. and Hoyer, W. and Kira, M.}, year={2002}, pages={45–52} }","short":"T. Meier, S.W. Koch, W. Hoyer, M. Kira, Physica E: Low-Dimensional Systems and Nanostructures 14 (2002) 45–52.","apa":"Meier, T., Koch, S. W., Hoyer, W., &#38; Kira, M. (2002). Theory of the optical properties of semiconductor nanostructures. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>14</i>(1–2), 45–52. <a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">https://doi.org/10.1016/S1386-9477(02)00358-2</a>","ama":"Meier T, Koch SW, Hoyer W, Kira M. Theory of the optical properties of semiconductor nanostructures. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>. 2002;14(1-2):45-52. doi:<a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">10.1016/S1386-9477(02)00358-2</a>","ieee":"T. Meier, S. W. Koch, W. Hoyer, and M. Kira, “Theory of the optical properties of semiconductor nanostructures,” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 14, no. 1–2, pp. 45–52, 2002, doi: <a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">10.1016/S1386-9477(02)00358-2</a>.","chicago":"Meier, Torsten, S.W. Koch, W. Hoyer, and M. Kira. “Theory of the Optical Properties of Semiconductor Nanostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 14, no. 1–2 (2002): 45–52. <a href=\"https://doi.org/10.1016/S1386-9477(02)00358-2\">https://doi.org/10.1016/S1386-9477(02)00358-2</a>."},"publication_status":"published","doi":"10.1016/S1386-9477(02)00358-2","main_file_link":[{"open_access":"1","url":"https://www.sciencedirect.com/science/article/abs/pii/S1386947702003582"}],"oa":"1","date_updated":"2023-04-02T13:31:25Z","volume":14,"author":[{"first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344","full_name":"Meier, Torsten"},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"},{"last_name":"Hoyer","full_name":"Hoyer, W.","first_name":"W."},{"full_name":"Kira, M.","last_name":"Kira","first_name":"M."}],"status":"public","type":"journal_article","extern":"1","_id":"43297","department":[{"_id":"293"}],"user_id":"49063"},{"user_id":"49063","department":[{"_id":"293"}],"_id":"43296","extern":"1","type":"journal_article","status":"public","author":[{"orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"last_name":"Wagner","full_name":"Wagner, H.P.","first_name":"H.P."},{"first_name":"H.-P.","full_name":"Tranitz, H.-P.","last_name":"Tranitz"},{"first_name":"Matthias","id":"138","full_name":"Reichelt, Matthias","last_name":"Reichelt"},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"}],"volume":190,"date_updated":"2023-04-02T13:28:58Z","main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/abs/10.1002/1521-396X(200204)190:3%3C843::AID-PSSA843%3E3.0.CO;2-B"}],"doi":"10.1002/1521-396X(200204)190:3<843::AID-PSSA843>3.0.CO;2-B","publication_status":"published","citation":{"short":"T. Meier, H.P. Wagner, H.-P. Tranitz, M. Reichelt, S.W. Koch, Physica Status Solidi (a) 190 (2002) 843–847.","bibtex":"@article{Meier_Wagner_Tranitz_Reichelt_Koch_2002, title={Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations}, volume={190}, DOI={<a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>}, number={3}, journal={physica status solidi (a)}, publisher={WILEY‐VCH Verlag Berlin GmbH}, author={Meier, Torsten and Wagner, H.P. and Tranitz, H.-P. and Reichelt, Matthias and Koch, S.W.}, year={2002}, pages={843–847} }","mla":"Meier, Torsten, et al. “Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations.” <i>Physica Status Solidi (a)</i>, vol. 190, no. 3, WILEY‐VCH Verlag Berlin GmbH, 2002, pp. 843–47, doi:<a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.","apa":"Meier, T., Wagner, H. P., Tranitz, H.-P., Reichelt, M., &#38; Koch, S. W. (2002). Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations. <i>Physica Status Solidi (a)</i>, <i>190</i>(3), 843–847. <a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>","ieee":"T. Meier, H. P. Wagner, H.-P. Tranitz, M. Reichelt, and S. W. Koch, “Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations,” <i>physica status solidi (a)</i>, vol. 190, no. 3, pp. 843–847, 2002, doi: <a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.","chicago":"Meier, Torsten, H.P. Wagner, H.-P. Tranitz, Matthias Reichelt, and S.W. Koch. “Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations.” <i>Physica Status Solidi (a)</i> 190, no. 3 (2002): 843–47. <a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.","ama":"Meier T, Wagner HP, Tranitz H-P, Reichelt M, Koch SW. Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations. <i>physica status solidi (a)</i>. 2002;190(3):843-847. doi:<a href=\"https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B\">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>"},"page":"843-847","intvolume":"       190","language":[{"iso":"eng"}],"publication":"physica status solidi (a)","abstract":[{"lang":"eng","text":"A three-beam configuration is used to investigate the spectrally resolved wave-mixing signal of a ZnSe single quantum well. The spectrum recorded in direction 2 k2–k1 shows coherent oscillations induced by a delayed third pulse with direction k3. Intensity and polarization-dependent measurements indicate that the signal is generated by a combination of four- and six-wave mixing. The origin of the oscillations can be explained qualitatively by a two-level model. The polarization-dependent experimental results require the treatment of many-body correlations and are well explained by microscopic calculations including four-particle correlations up to fifth order in the fields."}],"date_created":"2023-04-02T13:28:56Z","publisher":"WILEY‐VCH Verlag Berlin GmbH","title":"Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations","issue":"3","year":"2002"},{"publication":"physica status solidi (b)","abstract":[{"text":"The influence of coupling, correlation, and disorder on exciton and biexciton signatures is investigated using coherent excitation spectroscopy. Different biexciton-induced transitions of a single biexciton state are spectrally resolved. One of the transitions is found to be particularly sensitive to disorder. Mixed biexciton resonances, resulting from attractively interacting heavy and light hole exciton states, are identified. The observations are analyzed on the basis of microscopic model calculations.","lang":"eng"}],"language":[{"iso":"eng"}],"issue":"1","year":"2002","publisher":"WILEY‐VCH Verlag","date_created":"2023-04-02T13:52:54Z","title":"Coulomb correlations and biexciton signatures in coherent excitation spectroscopy of semiconductor quantum wells","type":"journal_article","status":"public","_id":"43300","user_id":"49063","department":[{"_id":"293"}],"extern":"1","publication_status":"published","citation":{"ieee":"T. Meier <i>et al.</i>, “Coulomb correlations and biexciton signatures in coherent excitation spectroscopy of semiconductor quantum wells,” <i>physica status solidi (b)</i>, vol. 234, no. 1, pp. 424–434, 2002, doi: <a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V\">10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>.","chicago":"Meier, Torsten, E. Finger, S.P. Kraft, M. Hofmann, S.W. Koch, W. Stolz, and W.W. Rühle. “Coulomb Correlations and Biexciton Signatures in Coherent Excitation Spectroscopy of Semiconductor Quantum Wells.” <i>Physica Status Solidi (b)</i> 234, no. 1 (2002): 424–34. <a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V\">https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>.","ama":"Meier T, Finger E, Kraft SP, et al. Coulomb correlations and biexciton signatures in coherent excitation spectroscopy of semiconductor quantum wells. <i>physica status solidi (b)</i>. 2002;234(1):424-434. doi:<a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V\">10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>","bibtex":"@article{Meier_Finger_Kraft_Hofmann_Koch_Stolz_Rühle_2002, title={Coulomb correlations and biexciton signatures in coherent excitation spectroscopy of semiconductor quantum wells}, volume={234}, DOI={<a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V\">10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>}, number={1}, journal={physica status solidi (b)}, publisher={WILEY‐VCH Verlag}, author={Meier, Torsten and Finger, E. and Kraft, S.P. and Hofmann, M. and Koch, S.W. and Stolz, W. and Rühle, W.W.}, year={2002}, pages={424–434} }","mla":"Meier, Torsten, et al. “Coulomb Correlations and Biexciton Signatures in Coherent Excitation Spectroscopy of Semiconductor Quantum Wells.” <i>Physica Status Solidi (b)</i>, vol. 234, no. 1, WILEY‐VCH Verlag, 2002, pp. 424–34, doi:<a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V\">10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>.","short":"T. Meier, E. Finger, S.P. Kraft, M. Hofmann, S.W. Koch, W. Stolz, W.W. Rühle, Physica Status Solidi (b) 234 (2002) 424–434.","apa":"Meier, T., Finger, E., Kraft, S. P., Hofmann, M., Koch, S. W., Stolz, W., &#38; Rühle, W. W. (2002). Coulomb correlations and biexciton signatures in coherent excitation spectroscopy of semiconductor quantum wells. <i>Physica Status Solidi (b)</i>, <i>234</i>(1), 424–434. <a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V\">https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>"},"page":"424-434","intvolume":"       234","date_updated":"2023-04-02T13:52:57Z","author":[{"last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344","first_name":"Torsten"},{"last_name":"Finger","full_name":"Finger, E.","first_name":"E."},{"first_name":"S.P.","full_name":"Kraft, S.P.","last_name":"Kraft"},{"first_name":"M.","last_name":"Hofmann","full_name":"Hofmann, M."},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."},{"last_name":"Stolz","full_name":"Stolz, W.","first_name":"W."},{"first_name":"W.W.","full_name":"Rühle, W.W.","last_name":"Rühle"}],"volume":234,"main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/abs/10.1002/1521-3951(200211)234:1%3C424::AID-PSSB424%3E3.0.CO;2-V"}],"doi":"10.1002/1521-3951(200211)234:1<424::AID-PSSB424>3.0.CO;2-V"},{"publication":"Germany NIC Series Vol. 9","language":[{"iso":"eng"}],"year":"2002","title":"Many-Body Correlation Effects in Photoexcited Semiconductor Heterostructures","date_created":"2023-04-02T13:41:13Z","publisher":"John von Neumann Institute for Computing","status":"public","editor":[{"full_name":"Rollnik, Horst","last_name":"Rollnik","first_name":"Horst"},{"first_name":"Dietrich","last_name":"Wolf","full_name":"Wolf, Dietrich"}],"type":"book_chapter","extern":"1","user_id":"49063","series_title":"NIC Symposium 2001: Symposium 5.-6. December 2001, Forschungszentrum Jülich: Proceedings","department":[{"_id":"293"}],"_id":"43298","citation":{"apa":"Meier, T., Reichelt, M., Schlichenmaier, C., Siggelkow, S., Thomas, P., Koch, S. W., Weiser, S., &#38; Sieh, C. (2002). Many-Body Correlation Effects in Photoexcited Semiconductor Heterostructures. In H. Rollnik &#38; D. Wolf (Eds.), <i>Germany NIC Series Vol. 9</i> (pp. 315–324). John von Neumann Institute for Computing.","short":"T. Meier, M. Reichelt, C. Schlichenmaier, S. Siggelkow, P. Thomas, S.W. Koch, S. Weiser, C. Sieh, in: H. Rollnik, D. Wolf (Eds.), Germany NIC Series Vol. 9, John von Neumann Institute for Computing, Jülich, 2002, pp. 315–324.","bibtex":"@inbook{Meier_Reichelt_Schlichenmaier_Siggelkow_Thomas_Koch_Weiser_Sieh_2002, place={Jülich}, series={NIC Symposium 2001: Symposium 5.-6. December 2001, Forschungszentrum Jülich: Proceedings}, title={Many-Body Correlation Effects in Photoexcited Semiconductor Heterostructures}, booktitle={Germany NIC Series Vol. 9}, publisher={John von Neumann Institute for Computing}, author={Meier, Torsten and Reichelt, Matthias and Schlichenmaier, C. and Siggelkow, S. and Thomas, P. and Koch, S.W. and Weiser, S. and Sieh, C.}, editor={Rollnik, Horst and Wolf, Dietrich}, year={2002}, pages={315–324}, collection={NIC Symposium 2001: Symposium 5.-6. December 2001, Forschungszentrum Jülich: Proceedings} }","mla":"Meier, Torsten, et al. “Many-Body Correlation Effects in Photoexcited Semiconductor Heterostructures.” <i>Germany NIC Series Vol. 9</i>, edited by Horst Rollnik and Dietrich Wolf, John von Neumann Institute for Computing, 2002, pp. 315–24.","ama":"Meier T, Reichelt M, Schlichenmaier C, et al. Many-Body Correlation Effects in Photoexcited Semiconductor Heterostructures. In: Rollnik H, Wolf D, eds. <i>Germany NIC Series Vol. 9</i>. NIC Symposium 2001: Symposium 5.-6. December 2001, Forschungszentrum Jülich: Proceedings. John von Neumann Institute for Computing; 2002:315-324.","chicago":"Meier, Torsten, Matthias Reichelt, C. Schlichenmaier, S. Siggelkow, P. Thomas, S.W. Koch, S. Weiser, and C. Sieh. “Many-Body Correlation Effects in Photoexcited Semiconductor Heterostructures.” In <i>Germany NIC Series Vol. 9</i>, edited by Horst Rollnik and Dietrich Wolf, 315–24. NIC Symposium 2001: Symposium 5.-6. December 2001, Forschungszentrum Jülich: Proceedings. Jülich: John von Neumann Institute for Computing, 2002.","ieee":"T. Meier <i>et al.</i>, “Many-Body Correlation Effects in Photoexcited Semiconductor Heterostructures,” in <i>Germany NIC Series Vol. 9</i>, H. Rollnik and D. Wolf, Eds. Jülich: John von Neumann Institute for Computing, 2002, pp. 315–324."},"page":" 315-324","place":"Jülich","publication_status":"published","publication_identifier":{"isbn":["3-00-009055-X"]},"main_file_link":[{"open_access":"1","url":"https://core.ac.uk/download/pdf/35009919.pdf"}],"author":[{"first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"first_name":"Matthias","last_name":"Reichelt","full_name":"Reichelt, Matthias","id":"138"},{"first_name":"C.","last_name":"Schlichenmaier","full_name":"Schlichenmaier, C."},{"last_name":"Siggelkow","full_name":"Siggelkow, S.","first_name":"S."},{"last_name":"Thomas","full_name":"Thomas, P.","first_name":"P."},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."},{"first_name":"S.","last_name":"Weiser","full_name":"Weiser, S."},{"first_name":"C.","last_name":"Sieh","full_name":"Sieh, C."}],"date_updated":"2023-04-02T13:45:18Z","oa":"1"},{"citation":{"apa":"Schroeter-Wittke, H. (2002). Das Credo der Komponisten. Ein Feature. In G. Fermor &#38; R. Schmidt-Rost (Eds.), <i>Glaube gefragt. Ein Credo-Prjekt</i> (pp. 106–154).","mla":"Schroeter-Wittke, Harald. “Das Credo Der Komponisten. Ein Feature.” <i>Glaube Gefragt. Ein Credo-Prjekt</i>, edited by Gotthard Fermor and Reinhard Schmidt-Rost, 2002, pp. 106–54.","short":"H. Schroeter-Wittke, in: G. Fermor, R. Schmidt-Rost (Eds.), Glaube Gefragt. Ein Credo-Prjekt, 2002, pp. 106–154.","bibtex":"@inbook{Schroeter-Wittke_2002, title={Das Credo der Komponisten. Ein Feature}, booktitle={Glaube gefragt. Ein Credo-Prjekt}, author={Schroeter-Wittke, Harald}, editor={Fermor, Gotthard and Schmidt-Rost, Reinhard}, year={2002}, pages={106–154} }","ama":"Schroeter-Wittke H. Das Credo der Komponisten. Ein Feature. In: Fermor G, Schmidt-Rost R, eds. <i>Glaube Gefragt. Ein Credo-Prjekt</i>. ; 2002:106-154.","chicago":"Schroeter-Wittke, Harald. “Das Credo Der Komponisten. Ein Feature.” In <i>Glaube Gefragt. Ein Credo-Prjekt</i>, edited by Gotthard Fermor and Reinhard Schmidt-Rost, 106–54, 2002.","ieee":"H. Schroeter-Wittke, “Das Credo der Komponisten. Ein Feature,” in <i>Glaube gefragt. Ein Credo-Prjekt</i>, G. Fermor and R. Schmidt-Rost, Eds. 2002, pp. 106–154."},"page":"106-154","year":"2002","author":[{"first_name":"Harald","last_name":"Schroeter-Wittke","full_name":"Schroeter-Wittke, Harald","id":"480"}],"date_created":"2023-04-15T00:05:50Z","date_updated":"2023-04-15T00:05:56Z","title":"Das Credo der Komponisten. Ein Feature","type":"book_chapter","publication":"Glaube gefragt. Ein Credo-Prjekt","status":"public","editor":[{"first_name":"Gotthard","full_name":"Fermor, Gotthard","last_name":"Fermor"},{"last_name":"Schmidt-Rost","full_name":"Schmidt-Rost, Reinhard","first_name":"Reinhard"}],"user_id":"480","_id":"43601","language":[{"iso":"eng"}]},{"title":"Rehinische Karnevalstheologie. PROT's Sitzungen und jecke Predigten","date_updated":"2023-04-15T00:04:42Z","publisher":"CMZ-Verlag","date_created":"2023-04-15T00:04:16Z","year":"2002","place":"Rheinbach-Merzbach","citation":{"apa":"Prößdorf, D., &#38; Schroeter-Wittke, H. (Eds.). (2002). <i>Rehinische Karnevalstheologie. PROT’s Sitzungen und jecke Predigten</i>. CMZ-Verlag.","bibtex":"@book{Prößdorf_Schroeter-Wittke_2002, place={Rheinbach-Merzbach}, title={Rehinische Karnevalstheologie. PROT’s Sitzungen und jecke Predigten}, publisher={CMZ-Verlag}, year={2002} }","mla":"Prößdorf, Detlev, and Harald Schroeter-Wittke, editors. <i>Rehinische Karnevalstheologie. PROT’s Sitzungen Und Jecke Predigten</i>. CMZ-Verlag, 2002.","short":"D. Prößdorf, H. Schroeter-Wittke, eds., Rehinische Karnevalstheologie. PROT’s Sitzungen Und Jecke Predigten, CMZ-Verlag, Rheinbach-Merzbach, 2002.","ama":"Prößdorf D, Schroeter-Wittke H, eds. <i>Rehinische Karnevalstheologie. PROT’s Sitzungen Und Jecke Predigten</i>. CMZ-Verlag; 2002.","ieee":"D. Prößdorf and H. Schroeter-Wittke, Eds., <i>Rehinische Karnevalstheologie. PROT’s Sitzungen und jecke Predigten</i>. Rheinbach-Merzbach: CMZ-Verlag, 2002.","chicago":"Prößdorf, Detlev, and Harald Schroeter-Wittke, eds. <i>Rehinische Karnevalstheologie. PROT’s Sitzungen Und Jecke Predigten</i>. Rheinbach-Merzbach: CMZ-Verlag, 2002."},"page":"240","publication_identifier":{"isbn":["3-87062-512-0"]},"language":[{"iso":"eng"}],"_id":"43599","user_id":"480","editor":[{"last_name":"Prößdorf","full_name":"Prößdorf, Detlev","first_name":"Detlev"},{"first_name":"Harald","full_name":"Schroeter-Wittke, Harald","id":"480","last_name":"Schroeter-Wittke"}],"status":"public","type":"book_editor"},{"publication":"Erinnerte und erfundene Wirklichkeit","type":"conference","status":"public","_id":"44191","department":[{"_id":"5"}],"user_id":"26755","language":[{"iso":"ger"}],"extern":"1","publication_status":"published","place":"Göteborg","year":"2002","page":"14","citation":{"bibtex":"@inproceedings{Müller_2002, place={Göteborg}, title={Die Kategorien Zeit und Raum im Roman “Stille Zeile Sechs” von Monika Maron}, booktitle={Erinnerte und erfundene Wirklichkeit}, publisher={iudicium Verlag}, author={Müller, Inez}, year={2002}, pages={14} }","short":"I. Müller, in: Erinnerte und erfundene Wirklichkeit, iudicium Verlag, Göteborg, 2002, p. 14.","mla":"Müller, Inez. “Die Kategorien Zeit und Raum im Roman ‘Stille Zeile Sechs’ von Monika Maron.” <i>Erinnerte und erfundene Wirklichkeit</i>, iudicium Verlag, 2002, p. 14.","apa":"Müller, I. (2002). Die Kategorien Zeit und Raum im Roman “Stille Zeile Sechs” von Monika Maron. <i>Erinnerte und erfundene Wirklichkeit</i>, 14.","ama":"Müller I. Die Kategorien Zeit und Raum im Roman “Stille Zeile Sechs” von Monika Maron. In: <i>Erinnerte und erfundene Wirklichkeit</i>. iudicium Verlag; 2002:14.","chicago":"Müller, Inez. “Die Kategorien Zeit und Raum im Roman ‘Stille Zeile Sechs’ von Monika Maron.” In <i>Erinnerte und erfundene Wirklichkeit</i>, 14. Göteborg: iudicium Verlag, 2002.","ieee":"I. Müller, “Die Kategorien Zeit und Raum im Roman ‘Stille Zeile Sechs’ von Monika Maron,” in <i>Erinnerte und erfundene Wirklichkeit</i>, Universität Göteborg, 2002, p. 14."},"publisher":"iudicium Verlag","date_updated":"2023-04-26T09:38:50Z","date_created":"2023-04-26T09:38:39Z","author":[{"last_name":"Müller","id":"26755","full_name":"Müller, Inez","first_name":"Inez"}],"title":"Die Kategorien Zeit und Raum im Roman \"Stille Zeile Sechs\" von Monika Maron","conference":{"location":"Universität Göteborg"}},{"extern":"1","language":[{"iso":"eng"}],"department":[{"_id":"293"}],"user_id":"49063","_id":"43299","status":"public","abstract":[{"text":"A density-matrix theory for absorption changes in semiconductors induced by electron or hole occupations is outlined. Bound and unbound trions are included via four-point correlation functions representing electron–hole pair transitions in the presence of carrier populations. The spectra calculated for semiconductor nanorings show bleaching of the exciton resonance and induced absorption at energies corresponding to transitions to bound and unbound trion states. Without a magnetic field, induced absorption below the exciton line due to bound negatively (positively) charged trions appears when the two electrons (holes) of the trion are in different bands. A magnetic field introduces characteristic modifications of the spectra that can be attributed to the Aharonov–Bohm effect. It may lead to the formation of additional bound magneto-trion states.","lang":"eng"}],"publication":"physica status solidi (b)","type":"journal_article","doi":"10.1002/1521-3951(200211)234:1<283::AID-PSSB283>3.0.CO;2-J","main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/abs/10.1002/1521-3951(200211)234:1%3C283::AID-PSSB283%3E3.0.CO;2-J"}],"title":"Signatures of trions in the optical spectra of doped semiconductor nanorings in a magnetic field","volume":234,"date_created":"2023-04-02T13:50:19Z","author":[{"first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","full_name":"Meier, Torsten"},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"last_name":"Koch","full_name":"Koch, S.W.","first_name":"S.W."},{"first_name":"K.","last_name":"Maschke","full_name":"Maschke, K."}],"date_updated":"2023-05-01T13:28:24Z","publisher":"WILEY‐VCH Verlag","page":"283-293","intvolume":"       234","citation":{"apa":"Meier, T., Thomas, P., Koch, S. W., &#38; Maschke, K. (2002). Signatures of trions in the optical spectra of doped semiconductor nanorings in a magnetic field. <i>Physica Status Solidi (b)</i>, <i>234</i>(1), 283–293. <a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J\">https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>","short":"T. Meier, P. Thomas, S.W. Koch, K. Maschke, Physica Status Solidi (b) 234 (2002) 283–293.","mla":"Meier, Torsten, et al. “Signatures of Trions in the Optical Spectra of Doped Semiconductor Nanorings in a Magnetic Field.” <i>Physica Status Solidi (b)</i>, vol. 234, no. 1, WILEY‐VCH Verlag, 2002, pp. 283–93, doi:<a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J\">10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>.","bibtex":"@article{Meier_Thomas_Koch_Maschke_2002, title={Signatures of trions in the optical spectra of doped semiconductor nanorings in a magnetic field}, volume={234}, DOI={<a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J\">10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>}, number={1}, journal={physica status solidi (b)}, publisher={WILEY‐VCH Verlag}, author={Meier, Torsten and Thomas, P. and Koch, S.W. and Maschke, K.}, year={2002}, pages={283–293} }","ama":"Meier T, Thomas P, Koch SW, Maschke K. Signatures of trions in the optical spectra of doped semiconductor nanorings in a magnetic field. <i>physica status solidi (b)</i>. 2002;234(1):283-293. doi:<a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J\">10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>","ieee":"T. Meier, P. Thomas, S. W. Koch, and K. Maschke, “Signatures of trions in the optical spectra of doped semiconductor nanorings in a magnetic field,” <i>physica status solidi (b)</i>, vol. 234, no. 1, pp. 283–293, 2002, doi: <a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J\">10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>.","chicago":"Meier, Torsten, P. Thomas, S.W. Koch, and K. Maschke. “Signatures of Trions in the Optical Spectra of Doped Semiconductor Nanorings in a Magnetic Field.” <i>Physica Status Solidi (b)</i> 234, no. 1 (2002): 283–93. <a href=\"https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J\">https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>."},"year":"2002","issue":"1","publication_status":"published"},{"date_created":"2023-04-02T13:54:57Z","publisher":"WILEY-VCH","title":"Optodynamik","issue":"12","year":"2002","language":[{"iso":"eng"}],"publication":"Physik Journal","author":[{"full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."}],"volume":1,"oa":"1","date_updated":"2023-05-01T13:28:14Z","main_file_link":[{"open_access":"1","url":"https://www.pro-physik.de/restricted-files/116051"}],"publication_status":"published","citation":{"chicago":"Meier, Torsten, and S.W. Koch. “Optodynamik.” <i>Physik Journal</i> 1, no. 12 (2002): 41–48.","ieee":"T. Meier and S. W. Koch, “Optodynamik,” <i>Physik Journal</i>, vol. 1, no. 12, pp. 41–48, 2002.","ama":"Meier T, Koch SW. Optodynamik. <i>Physik Journal</i>. 2002;1(12):41-48.","apa":"Meier, T., &#38; Koch, S. W. (2002). Optodynamik. <i>Physik Journal</i>, <i>1</i>(12), 41–48.","mla":"Meier, Torsten, and S. W. Koch. “Optodynamik.” <i>Physik Journal</i>, vol. 1, no. 12, WILEY-VCH, 2002, pp. 41–48.","bibtex":"@article{Meier_Koch_2002, title={Optodynamik}, volume={1}, number={12}, journal={Physik Journal}, publisher={WILEY-VCH}, author={Meier, Torsten and Koch, S.W.}, year={2002}, pages={41–48} }","short":"T. Meier, S.W. Koch, Physik Journal 1 (2002) 41–48."},"page":"41-48","intvolume":"         1","user_id":"49063","department":[{"_id":"293"}],"_id":"43301","extern":"1","type":"journal_article","status":"public"},{"publisher":"Instytut Matematyky NAN Ukrainy","date_updated":"2023-05-07T01:37:56Z","date_created":"2023-05-07T00:46:02Z","author":[{"last_name":"Burban","full_name":"Burban, Igor","id":"72064","first_name":"Igor"},{"last_name":"Drozd","full_name":"Drozd, Yu.","first_name":"Yu."}],"title":"Derived categories and matrix problems","conference":{"start_date":"2001-07-28","name":"Proceedings of the third international algebraic conference held in framework of the Ukrainian mathematical congress","location":"Kiev, Ukraine","end_date":"2001-07-28"},"publication_status":"published","place":"Kyiv","year":"2002","page":"201-211","citation":{"chicago":"Burban, Igor, and Yu. Drozd. “Derived Categories and Matrix Problems.” In <i> Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications. Proceedings of the Third International Algebraic Conference Held in Framework of the Ukrainian Mathematical Congress</i>, 201–11. Kyiv: Instytut Matematyky NAN Ukrainy, 2002.","ieee":"I. Burban and Yu. Drozd, “Derived categories and matrix problems,” in <i> Ukrainian mathematical congress 2001. Algebraic structures and their applications. Proceedings of the third international algebraic conference held in framework of the Ukrainian mathematical congress</i>, Kiev, Ukraine, 2002, pp. 201–211.","ama":"Burban I, Drozd Yu. Derived categories and matrix problems. In: <i> Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications. Proceedings of the Third International Algebraic Conference Held in Framework of the Ukrainian Mathematical Congress</i>. Instytut Matematyky NAN Ukrainy; 2002:201-211.","apa":"Burban, I., &#38; Drozd, Yu. (2002). Derived categories and matrix problems. <i> Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications. Proceedings of the Third International Algebraic Conference Held in Framework of the Ukrainian Mathematical Congress</i>, 201–211.","short":"I. Burban, Yu. Drozd, in:  Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications. Proceedings of the Third International Algebraic Conference Held in Framework of the Ukrainian Mathematical Congress, Instytut Matematyky NAN Ukrainy, Kyiv, 2002, pp. 201–211.","bibtex":"@inproceedings{Burban_Drozd_2002, place={Kyiv}, title={Derived categories and matrix problems}, booktitle={ Ukrainian mathematical congress 2001. Algebraic structures and their applications. Proceedings of the third international algebraic conference held in framework of the Ukrainian mathematical congress}, publisher={Instytut Matematyky NAN Ukrainy}, author={Burban, Igor and Drozd, Yu.}, year={2002}, pages={201–211} }","mla":"Burban, Igor, and Yu. Drozd. “Derived Categories and Matrix Problems.” <i> Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications. Proceedings of the Third International Algebraic Conference Held in Framework of the Ukrainian Mathematical Congress</i>, Instytut Matematyky NAN Ukrainy, 2002, pp. 201–11."},"_id":"44535","department":[{"_id":"602"}],"user_id":"49063","language":[{"iso":"eng"}],"extern":"1","publication":" Ukrainian mathematical congress 2001. Algebraic structures and their applications. Proceedings of the third international algebraic conference held in framework of the Ukrainian mathematical congress","type":"conference","status":"public"}]