---
_id: '8737'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A
  full_name: Seekamp, A
  last_name: Seekamp
- first_name: A.D
  full_name: Wieck, A.D
  last_name: Wieck
citation:
  ama: 'Reuter D, Meier C, Seekamp A, Wieck A. Fabrication of two-dimensional in-plane
    gate transistors by focused ion beam doping. <i>Physica E: Low-dimensional Systems
    and Nanostructures</i>. 2002;13:938-941. doi:<a href="https://doi.org/10.1016/s1386-9477(02)00239-4">10.1016/s1386-9477(02)00239-4</a>'
  apa: 'Reuter, D., Meier, C., Seekamp, A., &#38; Wieck, A. . (2002). Fabrication
    of two-dimensional in-plane gate transistors by focused ion beam doping. <i>Physica
    E: Low-Dimensional Systems and Nanostructures</i>, <i>13</i>, 938–941. <a href="https://doi.org/10.1016/s1386-9477(02)00239-4">https://doi.org/10.1016/s1386-9477(02)00239-4</a>'
  bibtex: '@article{Reuter_Meier_Seekamp_Wieck_2002, title={Fabrication of two-dimensional
    in-plane gate transistors by focused ion beam doping}, volume={13}, DOI={<a href="https://doi.org/10.1016/s1386-9477(02)00239-4">10.1016/s1386-9477(02)00239-4</a>},
    journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter,
    Dirk and Meier, Cedrik and Seekamp, A and Wieck, A.D}, year={2002}, pages={938–941}
    }'
  chicago: 'Reuter, Dirk, Cedrik Meier, A Seekamp, and A.D Wieck. “Fabrication of
    Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” <i>Physica
    E: Low-Dimensional Systems and Nanostructures</i> 13 (2002): 938–41. <a href="https://doi.org/10.1016/s1386-9477(02)00239-4">https://doi.org/10.1016/s1386-9477(02)00239-4</a>.'
  ieee: 'D. Reuter, C. Meier, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional
    in-plane gate transistors by focused ion beam doping,” <i>Physica E: Low-dimensional
    Systems and Nanostructures</i>, vol. 13, pp. 938–941, 2002.'
  mla: 'Reuter, Dirk, et al. “Fabrication of Two-Dimensional in-Plane Gate Transistors
    by Focused Ion Beam Doping.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>,
    vol. 13, 2002, pp. 938–41, doi:<a href="https://doi.org/10.1016/s1386-9477(02)00239-4">10.1016/s1386-9477(02)00239-4</a>.'
  short: 'D. Reuter, C. Meier, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems
    and Nanostructures 13 (2002) 938–941.'
date_created: 2019-03-28T15:14:19Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s1386-9477(02)00239-4
intvolume: '        13'
language:
- iso: eng
page: 938-941
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
  issn:
  - 1386-9477
publication_status: published
status: public
title: Fabrication of two-dimensional in-plane gate transistors by focused ion beam
  doping
type: journal_article
user_id: '20798'
volume: 13
year: '2002'
...
---
_id: '8738'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: P
  full_name: Schafmeister, P
  last_name: Schafmeister
- first_name: J
  full_name: Koch, J
  last_name: Koch
- first_name: K
  full_name: Schmidt, K
  last_name: Schmidt
- first_name: A.D
  full_name: Wieck, A.D
  last_name: Wieck
citation:
  ama: 'Reuter D, Schafmeister P, Koch J, Schmidt K, Wieck A. Growth of InAs quantum
    dots on focussed ion beam implanted GaAs(100). <i>Materials Science and Engineering:
    B</i>. 2002:230-233. doi:<a href="https://doi.org/10.1016/s0921-5107(01)00871-6">10.1016/s0921-5107(01)00871-6</a>'
  apa: 'Reuter, D., Schafmeister, P., Koch, J., Schmidt, K., &#38; Wieck, A. . (2002).
    Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). <i>Materials
    Science and Engineering: B</i>, 230–233. <a href="https://doi.org/10.1016/s0921-5107(01)00871-6">https://doi.org/10.1016/s0921-5107(01)00871-6</a>'
  bibtex: '@article{Reuter_Schafmeister_Koch_Schmidt_Wieck_2002, title={Growth of
    InAs quantum dots on focussed ion beam implanted GaAs(100)}, DOI={<a href="https://doi.org/10.1016/s0921-5107(01)00871-6">10.1016/s0921-5107(01)00871-6</a>},
    journal={Materials Science and Engineering: B}, author={Reuter, Dirk and Schafmeister,
    P and Koch, J and Schmidt, K and Wieck, A.D}, year={2002}, pages={230–233} }'
  chicago: 'Reuter, Dirk, P Schafmeister, J Koch, K Schmidt, and A.D Wieck. “Growth
    of InAs Quantum Dots on Focussed Ion Beam Implanted GaAs(100).” <i>Materials Science
    and Engineering: B</i>, 2002, 230–33. <a href="https://doi.org/10.1016/s0921-5107(01)00871-6">https://doi.org/10.1016/s0921-5107(01)00871-6</a>.'
  ieee: 'D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, and A. . Wieck, “Growth
    of InAs quantum dots on focussed ion beam implanted GaAs(100),” <i>Materials Science
    and Engineering: B</i>, pp. 230–233, 2002.'
  mla: 'Reuter, Dirk, et al. “Growth of InAs Quantum Dots on Focussed Ion Beam Implanted
    GaAs(100).” <i>Materials Science and Engineering: B</i>, 2002, pp. 230–33, doi:<a
    href="https://doi.org/10.1016/s0921-5107(01)00871-6">10.1016/s0921-5107(01)00871-6</a>.'
  short: 'D. Reuter, P. Schafmeister, J. Koch, K. Schmidt, A.. Wieck, Materials Science
    and Engineering: B (2002) 230–233.'
date_created: 2019-03-28T15:15:00Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s0921-5107(01)00871-6
language:
- iso: eng
page: 230-233
publication: 'Materials Science and Engineering: B'
publication_identifier:
  issn:
  - 0921-5107
publication_status: published
status: public
title: Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8740'
author:
- first_name: M. R.
  full_name: Schaapman, M. R.
  last_name: Schaapman
- first_name: P. C. M.
  full_name: Christianen, P. C. M.
  last_name: Christianen
- first_name: J. C.
  full_name: Maan, J. C.
  last_name: Maan
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
citation:
  ama: Schaapman MR, Christianen PCM, Maan JC, Reuter D, Wieck AD. A multipurpose
    torsional magnetometer with optical detection. <i>Applied Physics Letters</i>.
    2002:1041-1043. doi:<a href="https://doi.org/10.1063/1.1498152">10.1063/1.1498152</a>
  apa: Schaapman, M. R., Christianen, P. C. M., Maan, J. C., Reuter, D., &#38; Wieck,
    A. D. (2002). A multipurpose torsional magnetometer with optical detection. <i>Applied
    Physics Letters</i>, 1041–1043. <a href="https://doi.org/10.1063/1.1498152">https://doi.org/10.1063/1.1498152</a>
  bibtex: '@article{Schaapman_Christianen_Maan_Reuter_Wieck_2002, title={A multipurpose
    torsional magnetometer with optical detection}, DOI={<a href="https://doi.org/10.1063/1.1498152">10.1063/1.1498152</a>},
    journal={Applied Physics Letters}, author={Schaapman, M. R. and Christianen, P.
    C. M. and Maan, J. C. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={1041–1043}
    }'
  chicago: Schaapman, M. R., P. C. M. Christianen, J. C. Maan, Dirk Reuter, and A.
    D. Wieck. “A Multipurpose Torsional Magnetometer with Optical Detection.” <i>Applied
    Physics Letters</i>, 2002, 1041–43. <a href="https://doi.org/10.1063/1.1498152">https://doi.org/10.1063/1.1498152</a>.
  ieee: M. R. Schaapman, P. C. M. Christianen, J. C. Maan, D. Reuter, and A. D. Wieck,
    “A multipurpose torsional magnetometer with optical detection,” <i>Applied Physics
    Letters</i>, pp. 1041–1043, 2002.
  mla: Schaapman, M. R., et al. “A Multipurpose Torsional Magnetometer with Optical
    Detection.” <i>Applied Physics Letters</i>, 2002, pp. 1041–43, doi:<a href="https://doi.org/10.1063/1.1498152">10.1063/1.1498152</a>.
  short: M.R. Schaapman, P.C.M. Christianen, J.C. Maan, D. Reuter, A.D. Wieck, Applied
    Physics Letters (2002) 1041–1043.
date_created: 2019-03-28T15:17:30Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1498152
language:
- iso: eng
page: 1041-1043
publication: Applied Physics Letters
publication_identifier:
  issn:
  - 0003-6951
  - 1077-3118
publication_status: published
status: public
title: A multipurpose torsional magnetometer with optical detection
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8741'
author:
- first_name: K.H.
  full_name: Schmidt, K.H.
  last_name: Schmidt
- first_name: C.
  full_name: Bock, C.
  last_name: Bock
- first_name: U.
  full_name: Kunze, U.
  last_name: Kunze
- first_name: V.V.
  full_name: Khorenko, V.V.
  last_name: Khorenko
- first_name: S.
  full_name: Malzer, S.
  last_name: Malzer
- first_name: G.H.
  full_name: Döhler, G.H.
  last_name: Döhler
- first_name: M.
  full_name: Versen, M.
  last_name: Versen
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.D.
  full_name: Wieck, A.D.
  last_name: Wieck
citation:
  ama: 'Schmidt KH, Bock C, Kunze U, et al. Electronic structure of InAs self-assembled
    quantum dots. <i>Materials Science and Engineering: B</i>. 2002:238-242. doi:<a
    href="https://doi.org/10.1016/s0921-5107(01)00873-x">10.1016/s0921-5107(01)00873-x</a>'
  apa: 'Schmidt, K. H., Bock, C., Kunze, U., Khorenko, V. V., Malzer, S., Döhler,
    G. H., … Wieck, A. D. (2002). Electronic structure of InAs self-assembled quantum
    dots. <i>Materials Science and Engineering: B</i>, 238–242. <a href="https://doi.org/10.1016/s0921-5107(01)00873-x">https://doi.org/10.1016/s0921-5107(01)00873-x</a>'
  bibtex: '@article{Schmidt_Bock_Kunze_Khorenko_Malzer_Döhler_Versen_Reuter_Wieck_2002,
    title={Electronic structure of InAs self-assembled quantum dots}, DOI={<a href="https://doi.org/10.1016/s0921-5107(01)00873-x">10.1016/s0921-5107(01)00873-x</a>},
    journal={Materials Science and Engineering: B}, author={Schmidt, K.H. and Bock,
    C. and Kunze, U. and Khorenko, V.V. and Malzer, S. and Döhler, G.H. and Versen,
    M. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={238–242} }'
  chicago: 'Schmidt, K.H., C. Bock, U. Kunze, V.V. Khorenko, S. Malzer, G.H. Döhler,
    M. Versen, Dirk Reuter, and A.D. Wieck. “Electronic Structure of InAs Self-Assembled
    Quantum Dots.” <i>Materials Science and Engineering: B</i>, 2002, 238–42. <a href="https://doi.org/10.1016/s0921-5107(01)00873-x">https://doi.org/10.1016/s0921-5107(01)00873-x</a>.'
  ieee: 'K. H. Schmidt <i>et al.</i>, “Electronic structure of InAs self-assembled
    quantum dots,” <i>Materials Science and Engineering: B</i>, pp. 238–242, 2002.'
  mla: 'Schmidt, K. H., et al. “Electronic Structure of InAs Self-Assembled Quantum
    Dots.” <i>Materials Science and Engineering: B</i>, 2002, pp. 238–42, doi:<a href="https://doi.org/10.1016/s0921-5107(01)00873-x">10.1016/s0921-5107(01)00873-x</a>.'
  short: 'K.H. Schmidt, C. Bock, U. Kunze, V.V. Khorenko, S. Malzer, G.H. Döhler,
    M. Versen, D. Reuter, A.D. Wieck, Materials Science and Engineering: B (2002)
    238–242.'
date_created: 2019-03-28T15:18:09Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s0921-5107(01)00873-x
language:
- iso: eng
page: 238-242
publication: 'Materials Science and Engineering: B'
publication_identifier:
  issn:
  - 0921-5107
publication_status: published
status: public
title: Electronic structure of InAs self-assembled quantum dots
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8742'
author:
- first_name: F.
  full_name: Schulze-Wischeler, F.
  last_name: Schulze-Wischeler
- first_name: U.
  full_name: Zeitler, U.
  last_name: Zeitler
- first_name: F.
  full_name: Hohls, F.
  last_name: Hohls
- first_name: R.J.
  full_name: Haug, R.J.
  last_name: Haug
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.D.
  full_name: Wieck, A.D.
  last_name: Wieck
citation:
  ama: 'Schulze-Wischeler F, Zeitler U, Hohls F, Haug RJ, Reuter D, Wieck AD. Phonon
    excitation of a two-dimensional electron system around ν=1. <i>Physica E: Low-dimensional
    Systems and Nanostructures</i>. 2002:474-477. doi:<a href="https://doi.org/10.1016/s1386-9477(01)00342-3">10.1016/s1386-9477(01)00342-3</a>'
  apa: 'Schulze-Wischeler, F., Zeitler, U., Hohls, F., Haug, R. J., Reuter, D., &#38;
    Wieck, A. D. (2002). Phonon excitation of a two-dimensional electron system around
    ν=1. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 474–477. <a
    href="https://doi.org/10.1016/s1386-9477(01)00342-3">https://doi.org/10.1016/s1386-9477(01)00342-3</a>'
  bibtex: '@article{Schulze-Wischeler_Zeitler_Hohls_Haug_Reuter_Wieck_2002, title={Phonon
    excitation of a two-dimensional electron system around ν=1}, DOI={<a href="https://doi.org/10.1016/s1386-9477(01)00342-3">10.1016/s1386-9477(01)00342-3</a>},
    journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schulze-Wischeler,
    F. and Zeitler, U. and Hohls, F. and Haug, R.J. and Reuter, Dirk and Wieck, A.D.},
    year={2002}, pages={474–477} }'
  chicago: 'Schulze-Wischeler, F., U. Zeitler, F. Hohls, R.J. Haug, Dirk Reuter, and
    A.D. Wieck. “Phonon Excitation of a Two-Dimensional Electron System around Ν=1.”
    <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 474–77. <a
    href="https://doi.org/10.1016/s1386-9477(01)00342-3">https://doi.org/10.1016/s1386-9477(01)00342-3</a>.'
  ieee: 'F. Schulze-Wischeler, U. Zeitler, F. Hohls, R. J. Haug, D. Reuter, and A.
    D. Wieck, “Phonon excitation of a two-dimensional electron system around ν=1,”
    <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 474–477, 2002.'
  mla: 'Schulze-Wischeler, F., et al. “Phonon Excitation of a Two-Dimensional Electron
    System around Ν=1.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>,
    2002, pp. 474–77, doi:<a href="https://doi.org/10.1016/s1386-9477(01)00342-3">10.1016/s1386-9477(01)00342-3</a>.'
  short: 'F. Schulze-Wischeler, U. Zeitler, F. Hohls, R.J. Haug, D. Reuter, A.D. Wieck,
    Physica E: Low-Dimensional Systems and Nanostructures (2002) 474–477.'
date_created: 2019-03-28T15:18:43Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s1386-9477(01)00342-3
language:
- iso: eng
page: 474-477
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
  issn:
  - 1386-9477
publication_status: published
status: public
title: Phonon excitation of a two-dimensional electron system around ν=1
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8743'
author:
- first_name: M.
  full_name: Vitzethum, M.
  last_name: Vitzethum
- first_name: R.
  full_name: Schmidt, R.
  last_name: Schmidt
- first_name: P.
  full_name: Kiesel, P.
  last_name: Kiesel
- first_name: P.
  full_name: Schafmeister, P.
  last_name: Schafmeister
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.D.
  full_name: Wieck, A.D.
  last_name: Wieck
- first_name: G.H.
  full_name: Döhler, G.H.
  last_name: Döhler
citation:
  ama: 'Vitzethum M, Schmidt R, Kiesel P, et al. Quantum dot micro-LEDs for the study
    of few-dot electroluminescence, fabricated by focussed ion beam. <i>Physica E:
    Low-dimensional Systems and Nanostructures</i>. 2002:143-146. doi:<a href="https://doi.org/10.1016/s1386-9477(01)00506-9">10.1016/s1386-9477(01)00506-9</a>'
  apa: 'Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Reuter, D., Wieck,
    A. D., &#38; Döhler, G. H. (2002). Quantum dot micro-LEDs for the study of few-dot
    electroluminescence, fabricated by focussed ion beam. <i>Physica E: Low-Dimensional
    Systems and Nanostructures</i>, 143–146. <a href="https://doi.org/10.1016/s1386-9477(01)00506-9">https://doi.org/10.1016/s1386-9477(01)00506-9</a>'
  bibtex: '@article{Vitzethum_Schmidt_Kiesel_Schafmeister_Reuter_Wieck_Döhler_2002,
    title={Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated
    by focussed ion beam}, DOI={<a href="https://doi.org/10.1016/s1386-9477(01)00506-9">10.1016/s1386-9477(01)00506-9</a>},
    journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Vitzethum,
    M. and Schmidt, R. and Kiesel, P. and Schafmeister, P. and Reuter, Dirk and Wieck,
    A.D. and Döhler, G.H.}, year={2002}, pages={143–146} }'
  chicago: 'Vitzethum, M., R. Schmidt, P. Kiesel, P. Schafmeister, Dirk Reuter, A.D.
    Wieck, and G.H. Döhler. “Quantum Dot Micro-LEDs for the Study of Few-Dot Electroluminescence,
    Fabricated by Focussed Ion Beam.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>,
    2002, 143–46. <a href="https://doi.org/10.1016/s1386-9477(01)00506-9">https://doi.org/10.1016/s1386-9477(01)00506-9</a>.'
  ieee: 'M. Vitzethum <i>et al.</i>, “Quantum dot micro-LEDs for the study of few-dot
    electroluminescence, fabricated by focussed ion beam,” <i>Physica E: Low-dimensional
    Systems and Nanostructures</i>, pp. 143–146, 2002.'
  mla: 'Vitzethum, M., et al. “Quantum Dot Micro-LEDs for the Study of Few-Dot Electroluminescence,
    Fabricated by Focussed Ion Beam.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>,
    2002, pp. 143–46, doi:<a href="https://doi.org/10.1016/s1386-9477(01)00506-9">10.1016/s1386-9477(01)00506-9</a>.'
  short: 'M. Vitzethum, R. Schmidt, P. Kiesel, P. Schafmeister, D. Reuter, A.D. Wieck,
    G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2002) 143–146.'
date_created: 2019-03-28T15:19:16Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s1386-9477(01)00506-9
language:
- iso: eng
page: 143-146
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
  issn:
  - 1386-9477
publication_status: published
status: public
title: Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated
  by focussed ion beam
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8744'
author:
- first_name: M.
  full_name: Vitzethum, M.
  last_name: Vitzethum
- first_name: R.
  full_name: Schmidt, R.
  last_name: Schmidt
- first_name: P.
  full_name: Kiesel, P.
  last_name: Kiesel
- first_name: P.
  full_name: Schafmeister, P.
  last_name: Schafmeister
- first_name: J.
  full_name: Koch, J.
  last_name: Koch
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.D.
  full_name: Wieck, A.D.
  last_name: Wieck
- first_name: G.H.
  full_name: Döhler, G.H.
  last_name: Döhler
citation:
  ama: 'Vitzethum M, Schmidt R, Kiesel P, et al. A novel photoconductive detector
    for single photon detection. <i>Physica E: Low-dimensional Systems and Nanostructures</i>.
    2002:570-573. doi:<a href="https://doi.org/10.1016/s1386-9477(01)00475-1">10.1016/s1386-9477(01)00475-1</a>'
  apa: 'Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Koch, J., Reuter,
    D., … Döhler, G. H. (2002). A novel photoconductive detector for single photon
    detection. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 570–573.
    <a href="https://doi.org/10.1016/s1386-9477(01)00475-1">https://doi.org/10.1016/s1386-9477(01)00475-1</a>'
  bibtex: '@article{Vitzethum_Schmidt_Kiesel_Schafmeister_Koch_Reuter_Wieck_Döhler_2002,
    title={A novel photoconductive detector for single photon detection}, DOI={<a
    href="https://doi.org/10.1016/s1386-9477(01)00475-1">10.1016/s1386-9477(01)00475-1</a>},
    journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Vitzethum,
    M. and Schmidt, R. and Kiesel, P. and Schafmeister, P. and Koch, J. and Reuter,
    Dirk and Wieck, A.D. and Döhler, G.H.}, year={2002}, pages={570–573} }'
  chicago: 'Vitzethum, M., R. Schmidt, P. Kiesel, P. Schafmeister, J. Koch, Dirk Reuter,
    A.D. Wieck, and G.H. Döhler. “A Novel Photoconductive Detector for Single Photon
    Detection.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002,
    570–73. <a href="https://doi.org/10.1016/s1386-9477(01)00475-1">https://doi.org/10.1016/s1386-9477(01)00475-1</a>.'
  ieee: 'M. Vitzethum <i>et al.</i>, “A novel photoconductive detector for single
    photon detection,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>,
    pp. 570–573, 2002.'
  mla: 'Vitzethum, M., et al. “A Novel Photoconductive Detector for Single Photon
    Detection.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002,
    pp. 570–73, doi:<a href="https://doi.org/10.1016/s1386-9477(01)00475-1">10.1016/s1386-9477(01)00475-1</a>.'
  short: 'M. Vitzethum, R. Schmidt, P. Kiesel, P. Schafmeister, J. Koch, D. Reuter,
    A.D. Wieck, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures
    (2002) 570–573.'
date_created: 2019-03-28T15:19:48Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s1386-9477(01)00475-1
language:
- iso: eng
page: 570-573
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
  issn:
  - 1386-9477
publication_status: published
status: public
title: A novel photoconductive detector for single photon detection
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8745'
author:
- first_name: M.
  full_name: Versen, M.
  last_name: Versen
- first_name: K.H.
  full_name: Schmidt, K.H.
  last_name: Schmidt
- first_name: C.
  full_name: Bock, C.
  last_name: Bock
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.D.
  full_name: Wieck, A.D.
  last_name: Wieck
- first_name: U.
  full_name: Kunze, U.
  last_name: Kunze
citation:
  ama: Versen M, Schmidt KH, Bock C, Reuter D, Wieck AD, Kunze U. Single-Electron
    Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential.
    <i>physica status solidi (b)</i>. 2002:669-673. doi:<a href="https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h">10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>
  apa: Versen, M., Schmidt, K. H., Bock, C., Reuter, D., Wieck, A. D., &#38; Kunze,
    U. (2002). Single-Electron Tunneling through Individual InAs Quantum Dots within
    a Saddle Point Potential. <i>Physica Status Solidi (B)</i>, 669–673. <a href="https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h">https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>
  bibtex: '@article{Versen_Schmidt_Bock_Reuter_Wieck_Kunze_2002, title={Single-Electron
    Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential},
    DOI={<a href="https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h">10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>},
    journal={physica status solidi (b)}, author={Versen, M. and Schmidt, K.H. and
    Bock, C. and Reuter, Dirk and Wieck, A.D. and Kunze, U.}, year={2002}, pages={669–673}
    }'
  chicago: Versen, M., K.H. Schmidt, C. Bock, Dirk Reuter, A.D. Wieck, and U. Kunze.
    “Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle
    Point Potential.” <i>Physica Status Solidi (B)</i>, 2002, 669–73. <a href="https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h">https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>.
  ieee: M. Versen, K. H. Schmidt, C. Bock, D. Reuter, A. D. Wieck, and U. Kunze, “Single-Electron
    Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential,”
    <i>physica status solidi (b)</i>, pp. 669–673, 2002.
  mla: Versen, M., et al. “Single-Electron Tunneling through Individual InAs Quantum
    Dots within a Saddle Point Potential.” <i>Physica Status Solidi (B)</i>, 2002,
    pp. 669–73, doi:<a href="https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h">10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h</a>.
  short: M. Versen, K.H. Schmidt, C. Bock, D. Reuter, A.D. Wieck, U. Kunze, Physica
    Status Solidi (B) (2002) 669–673.
date_created: 2019-03-29T11:22:52Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/(sici)1521-3951(200104)224:3<669::aid-pssb669>3.3.co;2-h
language:
- iso: eng
page: 669-673
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
status: public
title: Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle
  Point Potential
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8746'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: C.
  full_name: Meier, C.
  last_name: Meier
- first_name: M. A. Serrano
  full_name: Álvarez, M. A. Serrano
  last_name: Álvarez
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
citation:
  ama: Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively
    doped heterostructures by employing AlAs/GaAs superlattices. <i>Applied Physics
    Letters</i>. 2002:377-379. doi:<a href="https://doi.org/10.1063/1.1386618">10.1063/1.1386618</a>
  apa: Reuter, D., Meier, C., Álvarez, M. A. S., &#38; Wieck, A. D. (2002). Increased
    thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices.
    <i>Applied Physics Letters</i>, 377–379. <a href="https://doi.org/10.1063/1.1386618">https://doi.org/10.1063/1.1386618</a>
  bibtex: '@article{Reuter_Meier_Álvarez_Wieck_2002, title={Increased thermal budget
    for selectively doped heterostructures by employing AlAs/GaAs superlattices},
    DOI={<a href="https://doi.org/10.1063/1.1386618">10.1063/1.1386618</a>}, journal={Applied
    Physics Letters}, author={Reuter, Dirk and Meier, C. and Álvarez, M. A. Serrano
    and Wieck, A. D.}, year={2002}, pages={377–379} }'
  chicago: Reuter, Dirk, C. Meier, M. A. Serrano Álvarez, and A. D. Wieck. “Increased
    Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.”
    <i>Applied Physics Letters</i>, 2002, 377–79. <a href="https://doi.org/10.1063/1.1386618">https://doi.org/10.1063/1.1386618</a>.
  ieee: D. Reuter, C. Meier, M. A. S. Álvarez, and A. D. Wieck, “Increased thermal
    budget for selectively doped heterostructures by employing AlAs/GaAs superlattices,”
    <i>Applied Physics Letters</i>, pp. 377–379, 2002.
  mla: Reuter, Dirk, et al. “Increased Thermal Budget for Selectively Doped Heterostructures
    by Employing AlAs/GaAs Superlattices.” <i>Applied Physics Letters</i>, 2002, pp.
    377–79, doi:<a href="https://doi.org/10.1063/1.1386618">10.1063/1.1386618</a>.
  short: D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters
    (2002) 377–379.
date_created: 2019-03-29T11:23:32Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1386618
language:
- iso: eng
page: 377-379
publication: Applied Physics Letters
publication_identifier:
  issn:
  - 0003-6951
  - 1077-3118
publication_status: published
status: public
title: Increased thermal budget for selectively doped heterostructures by employing
  AlAs/GaAs superlattices
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8747'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: D
  full_name: Kähler, D
  last_name: Kähler
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
    AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor
    Science and Technology</i>. 2002:603-607. doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>
  apa: Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated
    selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
    <i>Semiconductor Science and Technology</i>, 603–607. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>
  bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
    DOI={<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>},
    journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
    D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
  chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
    Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
    <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>.
  ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
    <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.
  mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
    as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>,
    2002, pp. 603–07, doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>.
  short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
    (2002) 603–607.
date_created: 2019-03-29T11:24:11Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
  material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8763'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: M.
  full_name: Versen, M.
  last_name: Versen
- first_name: M. D.
  full_name: Schneider, M. D.
  last_name: Schneider
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
citation:
  ama: Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in
    selectively doped AlxGa1−xAs/GaAs heterostructures with high electron densities.
    <i>Journal of Applied Physics</i>. 2002:321-325. doi:<a href="https://doi.org/10.1063/1.373660">10.1063/1.373660</a>
  apa: Reuter, D., Versen, M., Schneider, M. D., &#38; Wieck, A. D. (2002). Increased
    mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with
    high electron densities. <i>Journal of Applied Physics</i>, 321–325. <a href="https://doi.org/10.1063/1.373660">https://doi.org/10.1063/1.373660</a>
  bibtex: '@article{Reuter_Versen_Schneider_Wieck_2002, title={Increased mobility
    anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron
    densities}, DOI={<a href="https://doi.org/10.1063/1.373660">10.1063/1.373660</a>},
    journal={Journal of Applied Physics}, author={Reuter, Dirk and Versen, M. and
    Schneider, M. D. and Wieck, A. D.}, year={2002}, pages={321–325} }'
  chicago: Reuter, Dirk, M. Versen, M. D. Schneider, and A. D. Wieck. “Increased Mobility
    Anisotropy in Selectively Doped AlxGa1−xAs/GaAs Heterostructures with High Electron
    Densities.” <i>Journal of Applied Physics</i>, 2002, 321–25. <a href="https://doi.org/10.1063/1.373660">https://doi.org/10.1063/1.373660</a>.
  ieee: D. Reuter, M. Versen, M. D. Schneider, and A. D. Wieck, “Increased mobility
    anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures with high electron
    densities,” <i>Journal of Applied Physics</i>, pp. 321–325, 2002.
  mla: Reuter, Dirk, et al. “Increased Mobility Anisotropy in Selectively Doped AlxGa1−xAs/GaAs
    Heterostructures with High Electron Densities.” <i>Journal of Applied Physics</i>,
    2002, pp. 321–25, doi:<a href="https://doi.org/10.1063/1.373660">10.1063/1.373660</a>.
  short: D. Reuter, M. Versen, M.D. Schneider, A.D. Wieck, Journal of Applied Physics
    (2002) 321–325.
date_created: 2019-04-01T07:33:21Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.373660
language:
- iso: eng
page: 321-325
publication: Journal of Applied Physics
publication_identifier:
  issn:
  - 0021-8979
  - 1089-7550
publication_status: published
status: public
title: Increased mobility anisotropy in selectively doped AlxGa1−xAs/GaAs heterostructures
  with high electron densities
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8768'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: D
  full_name: Kähler, D
  last_name: Kähler
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
    AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor
    Science and Technology</i>. 2002:603-607. doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>
  apa: Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated
    selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
    <i>Semiconductor Science and Technology</i>, 603–607. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>
  bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
    DOI={<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>},
    journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
    D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
  chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
    Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
    <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>.
  ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
    <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.
  mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
    as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>,
    2002, pp. 603–07, doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>.
  short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
    (2002) 603–607.
date_created: 2019-04-01T07:56:38Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
  material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8771'
author:
- first_name: M. E.
  full_name: Gershenson, M. E.
  last_name: Gershenson
- first_name: Yu. B.
  full_name: Khavin, Yu. B.
  last_name: Khavin
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: P.
  full_name: Schafmeister, P.
  last_name: Schafmeister
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
citation:
  ama: Gershenson ME, Khavin YB, Reuter D, Schafmeister P, Wieck AD. Hot-Electron
    Effects in Two-Dimensional Hopping with a Large Localization Length. <i>Physical
    Review Letters</i>. 2002:1718-1721. doi:<a href="https://doi.org/10.1103/physrevlett.85.1718">10.1103/physrevlett.85.1718</a>
  apa: Gershenson, M. E., Khavin, Y. B., Reuter, D., Schafmeister, P., &#38; Wieck,
    A. D. (2002). Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization
    Length. <i>Physical Review Letters</i>, 1718–1721. <a href="https://doi.org/10.1103/physrevlett.85.1718">https://doi.org/10.1103/physrevlett.85.1718</a>
  bibtex: '@article{Gershenson_Khavin_Reuter_Schafmeister_Wieck_2002, title={Hot-Electron
    Effects in Two-Dimensional Hopping with a Large Localization Length}, DOI={<a
    href="https://doi.org/10.1103/physrevlett.85.1718">10.1103/physrevlett.85.1718</a>},
    journal={Physical Review Letters}, author={Gershenson, M. E. and Khavin, Yu. B.
    and Reuter, Dirk and Schafmeister, P. and Wieck, A. D.}, year={2002}, pages={1718–1721}
    }'
  chicago: Gershenson, M. E., Yu. B. Khavin, Dirk Reuter, P. Schafmeister, and A.
    D. Wieck. “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization
    Length.” <i>Physical Review Letters</i>, 2002, 1718–21. <a href="https://doi.org/10.1103/physrevlett.85.1718">https://doi.org/10.1103/physrevlett.85.1718</a>.
  ieee: M. E. Gershenson, Y. B. Khavin, D. Reuter, P. Schafmeister, and A. D. Wieck,
    “Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length,”
    <i>Physical Review Letters</i>, pp. 1718–1721, 2002.
  mla: Gershenson, M. E., et al. “Hot-Electron Effects in Two-Dimensional Hopping
    with a Large Localization Length.” <i>Physical Review Letters</i>, 2002, pp. 1718–21,
    doi:<a href="https://doi.org/10.1103/physrevlett.85.1718">10.1103/physrevlett.85.1718</a>.
  short: M.E. Gershenson, Y.B. Khavin, D. Reuter, P. Schafmeister, A.D. Wieck, Physical
    Review Letters (2002) 1718–1721.
date_created: 2019-04-01T08:07:13Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevlett.85.1718
language:
- iso: eng
page: 1718-1721
publication: Physical Review Letters
publication_identifier:
  issn:
  - 0031-9007
  - 1079-7114
publication_status: published
status: public
title: Hot-Electron Effects in Two-Dimensional Hopping with a Large Localization Length
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8772'
author:
- first_name: M
  full_name: Versen, M
  last_name: Versen
- first_name: B
  full_name: Klehn, B
  last_name: Klehn
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.D
  full_name: Wieck, A.D
  last_name: Wieck
citation:
  ama: Versen M, Klehn B, Kunze U, Reuter D, Wieck A. Nanoscale devices fabricated
    by direct machining of GaAs with an atomic force microscope. <i>Ultramicroscopy</i>.
    2002:159-163. doi:<a href="https://doi.org/10.1016/s0304-3991(99)00127-8">10.1016/s0304-3991(99)00127-8</a>
  apa: Versen, M., Klehn, B., Kunze, U., Reuter, D., &#38; Wieck, A. . (2002). Nanoscale
    devices fabricated by direct machining of GaAs with an atomic force microscope.
    <i>Ultramicroscopy</i>, 159–163. <a href="https://doi.org/10.1016/s0304-3991(99)00127-8">https://doi.org/10.1016/s0304-3991(99)00127-8</a>
  bibtex: '@article{Versen_Klehn_Kunze_Reuter_Wieck_2002, title={Nanoscale devices
    fabricated by direct machining of GaAs with an atomic force microscope}, DOI={<a
    href="https://doi.org/10.1016/s0304-3991(99)00127-8">10.1016/s0304-3991(99)00127-8</a>},
    journal={Ultramicroscopy}, author={Versen, M and Klehn, B and Kunze, U and Reuter,
    Dirk and Wieck, A.D}, year={2002}, pages={159–163} }'
  chicago: Versen, M, B Klehn, U Kunze, Dirk Reuter, and A.D Wieck. “Nanoscale Devices
    Fabricated by Direct Machining of GaAs with an Atomic Force Microscope.” <i>Ultramicroscopy</i>,
    2002, 159–63. <a href="https://doi.org/10.1016/s0304-3991(99)00127-8">https://doi.org/10.1016/s0304-3991(99)00127-8</a>.
  ieee: M. Versen, B. Klehn, U. Kunze, D. Reuter, and A. . Wieck, “Nanoscale devices
    fabricated by direct machining of GaAs with an atomic force microscope,” <i>Ultramicroscopy</i>,
    pp. 159–163, 2002.
  mla: Versen, M., et al. “Nanoscale Devices Fabricated by Direct Machining of GaAs
    with an Atomic Force Microscope.” <i>Ultramicroscopy</i>, 2002, pp. 159–63, doi:<a
    href="https://doi.org/10.1016/s0304-3991(99)00127-8">10.1016/s0304-3991(99)00127-8</a>.
  short: M. Versen, B. Klehn, U. Kunze, D. Reuter, A.. Wieck, Ultramicroscopy (2002)
    159–163.
date_created: 2019-04-01T08:09:48Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s0304-3991(99)00127-8
language:
- iso: eng
page: 159-163
publication: Ultramicroscopy
publication_identifier:
  issn:
  - 0304-3991
publication_status: published
status: public
title: Nanoscale devices fabricated by direct machining of GaAs with an atomic force
  microscope
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8773'
author:
- first_name: S
  full_name: Skaberna, S
  last_name: Skaberna
- first_name: M
  full_name: Versen, M
  last_name: Versen
- first_name: B
  full_name: Klehn, B
  last_name: Klehn
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A
  full_name: D. Wieck, A
  last_name: D. Wieck
citation:
  ama: Skaberna S, Versen M, Klehn B, Kunze U, Reuter D, D. Wieck A. Fabrication of
    a quantum point contact by the dynamic plowing technique and wet-chemical etching.
    <i>Ultramicroscopy</i>. 2002:153-157. doi:<a href="https://doi.org/10.1016/s0304-3991(99)00126-6">10.1016/s0304-3991(99)00126-6</a>
  apa: Skaberna, S., Versen, M., Klehn, B., Kunze, U., Reuter, D., &#38; D. Wieck,
    A. (2002). Fabrication of a quantum point contact by the dynamic plowing technique
    and wet-chemical etching. <i>Ultramicroscopy</i>, 153–157. <a href="https://doi.org/10.1016/s0304-3991(99)00126-6">https://doi.org/10.1016/s0304-3991(99)00126-6</a>
  bibtex: '@article{Skaberna_Versen_Klehn_Kunze_Reuter_D. Wieck_2002, title={Fabrication
    of a quantum point contact by the dynamic plowing technique and wet-chemical etching},
    DOI={<a href="https://doi.org/10.1016/s0304-3991(99)00126-6">10.1016/s0304-3991(99)00126-6</a>},
    journal={Ultramicroscopy}, author={Skaberna, S and Versen, M and Klehn, B and
    Kunze, U and Reuter, Dirk and D. Wieck, A}, year={2002}, pages={153–157} }'
  chicago: Skaberna, S, M Versen, B Klehn, U Kunze, Dirk Reuter, and A D. Wieck. “Fabrication
    of a Quantum Point Contact by the Dynamic Plowing Technique and Wet-Chemical Etching.”
    <i>Ultramicroscopy</i>, 2002, 153–57. <a href="https://doi.org/10.1016/s0304-3991(99)00126-6">https://doi.org/10.1016/s0304-3991(99)00126-6</a>.
  ieee: S. Skaberna, M. Versen, B. Klehn, U. Kunze, D. Reuter, and A. D. Wieck, “Fabrication
    of a quantum point contact by the dynamic plowing technique and wet-chemical etching,”
    <i>Ultramicroscopy</i>, pp. 153–157, 2002.
  mla: Skaberna, S., et al. “Fabrication of a Quantum Point Contact by the Dynamic
    Plowing Technique and Wet-Chemical Etching.” <i>Ultramicroscopy</i>, 2002, pp.
    153–57, doi:<a href="https://doi.org/10.1016/s0304-3991(99)00126-6">10.1016/s0304-3991(99)00126-6</a>.
  short: S. Skaberna, M. Versen, B. Klehn, U. Kunze, D. Reuter, A. D. Wieck, Ultramicroscopy
    (2002) 153–157.
date_created: 2019-04-01T08:12:28Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s0304-3991(99)00126-6
language:
- iso: eng
page: 153-157
publication: Ultramicroscopy
publication_identifier:
  issn:
  - 0304-3991
publication_status: published
status: public
title: Fabrication of a quantum point contact by the dynamic plowing technique and
  wet-chemical etching
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8774'
author:
- first_name: K.H
  full_name: Schmidt, K.H
  last_name: Schmidt
- first_name: M
  full_name: Versen, M
  last_name: Versen
- first_name: C
  full_name: Bock, C
  last_name: Bock
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.D
  full_name: Wieck, A.D
  last_name: Wieck
citation:
  ama: 'Schmidt K., Versen M, Bock C, Kunze U, Reuter D, Wieck A. In-plane and perpendicular
    tunneling through InAs quantum dots. <i>Physica E: Low-dimensional Systems and
    Nanostructures</i>. 2002:425-429. doi:<a href="https://doi.org/10.1016/s1386-9477(99)00354-9">10.1016/s1386-9477(99)00354-9</a>'
  apa: 'Schmidt, K. ., Versen, M., Bock, C., Kunze, U., Reuter, D., &#38; Wieck, A.
    . (2002). In-plane and perpendicular tunneling through InAs quantum dots. <i>Physica
    E: Low-Dimensional Systems and Nanostructures</i>, 425–429. <a href="https://doi.org/10.1016/s1386-9477(99)00354-9">https://doi.org/10.1016/s1386-9477(99)00354-9</a>'
  bibtex: '@article{Schmidt_Versen_Bock_Kunze_Reuter_Wieck_2002, title={In-plane and
    perpendicular tunneling through InAs quantum dots}, DOI={<a href="https://doi.org/10.1016/s1386-9477(99)00354-9">10.1016/s1386-9477(99)00354-9</a>},
    journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schmidt,
    K.H and Versen, M and Bock, C and Kunze, U and Reuter, Dirk and Wieck, A.D}, year={2002},
    pages={425–429} }'
  chicago: 'Schmidt, K.H, M Versen, C Bock, U Kunze, Dirk Reuter, and A.D Wieck. “In-Plane
    and Perpendicular Tunneling through InAs Quantum Dots.” <i>Physica E: Low-Dimensional
    Systems and Nanostructures</i>, 2002, 425–29. <a href="https://doi.org/10.1016/s1386-9477(99)00354-9">https://doi.org/10.1016/s1386-9477(99)00354-9</a>.'
  ieee: 'K. . Schmidt, M. Versen, C. Bock, U. Kunze, D. Reuter, and A. . Wieck, “In-plane
    and perpendicular tunneling through InAs quantum dots,” <i>Physica E: Low-dimensional
    Systems and Nanostructures</i>, pp. 425–429, 2002.'
  mla: 'Schmidt, K. .., et al. “In-Plane and Perpendicular Tunneling through InAs
    Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002,
    pp. 425–29, doi:<a href="https://doi.org/10.1016/s1386-9477(99)00354-9">10.1016/s1386-9477(99)00354-9</a>.'
  short: 'K.. Schmidt, M. Versen, C. Bock, U. Kunze, D. Reuter, A.. Wieck, Physica
    E: Low-Dimensional Systems and Nanostructures (2002) 425–429.'
date_created: 2019-04-01T08:13:43Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s1386-9477(99)00354-9
language:
- iso: eng
page: 425-429
publication: 'Physica E: Low-dimensional Systems and Nanostructures'
publication_identifier:
  issn:
  - 1386-9477
publication_status: published
status: public
title: In-plane and perpendicular tunneling through InAs quantum dots
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8776'
author:
- first_name: K. H.
  full_name: Schmidt, K. H.
  last_name: Schmidt
- first_name: M.
  full_name: Versen, M.
  last_name: Versen
- first_name: U.
  full_name: Kunze, U.
  last_name: Kunze
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
citation:
  ama: Schmidt KH, Versen M, Kunze U, Reuter D, Wieck AD. Electron transport through
    a single InAs quantum dot. <i>Physical Review B</i>. 2002:15879-15887. doi:<a
    href="https://doi.org/10.1103/physrevb.62.15879">10.1103/physrevb.62.15879</a>
  apa: Schmidt, K. H., Versen, M., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2002).
    Electron transport through a single InAs quantum dot. <i>Physical Review B</i>,
    15879–15887. <a href="https://doi.org/10.1103/physrevb.62.15879">https://doi.org/10.1103/physrevb.62.15879</a>
  bibtex: '@article{Schmidt_Versen_Kunze_Reuter_Wieck_2002, title={Electron transport
    through a single InAs quantum dot}, DOI={<a href="https://doi.org/10.1103/physrevb.62.15879">10.1103/physrevb.62.15879</a>},
    journal={Physical Review B}, author={Schmidt, K. H. and Versen, M. and Kunze,
    U. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={15879–15887} }'
  chicago: Schmidt, K. H., M. Versen, U. Kunze, Dirk Reuter, and A. D. Wieck. “Electron
    Transport through a Single InAs Quantum Dot.” <i>Physical Review B</i>, 2002,
    15879–87. <a href="https://doi.org/10.1103/physrevb.62.15879">https://doi.org/10.1103/physrevb.62.15879</a>.
  ieee: K. H. Schmidt, M. Versen, U. Kunze, D. Reuter, and A. D. Wieck, “Electron
    transport through a single InAs quantum dot,” <i>Physical Review B</i>, pp. 15879–15887,
    2002.
  mla: Schmidt, K. H., et al. “Electron Transport through a Single InAs Quantum Dot.”
    <i>Physical Review B</i>, 2002, pp. 15879–87, doi:<a href="https://doi.org/10.1103/physrevb.62.15879">10.1103/physrevb.62.15879</a>.
  short: K.H. Schmidt, M. Versen, U. Kunze, D. Reuter, A.D. Wieck, Physical Review
    B (2002) 15879–15887.
date_created: 2019-04-01T08:15:38Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1103/physrevb.62.15879
language:
- iso: eng
page: 15879-15887
publication: Physical Review B
publication_identifier:
  issn:
  - 0163-1829
  - 1095-3795
publication_status: published
status: public
title: Electron transport through a single InAs quantum dot
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8778'
author:
- first_name: Christian
  full_name: Heidtkamp, Christian
  last_name: Heidtkamp
- first_name: Sabine
  full_name: Lassen, Sabine
  last_name: Lassen
- first_name: Marcus
  full_name: Schneider, Marcus
  last_name: Schneider
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Martin
  full_name: Versen, Martin
  last_name: Versen
- first_name: Andreas D.
  full_name: Wieck, Andreas D.
  last_name: Wieck
citation:
  ama: 'Heidtkamp C, Lassen S, Schneider M, Reuter D, Versen M, Wieck AD. Dependence
    of the longitudinal resistance on edge potential and electron density in quantum
    Hall systems. <i>Physica B: Condensed Matter</i>. 2002:1726-1727. doi:<a href="https://doi.org/10.1016/s0921-4526(99)02890-2">10.1016/s0921-4526(99)02890-2</a>'
  apa: 'Heidtkamp, C., Lassen, S., Schneider, M., Reuter, D., Versen, M., &#38; Wieck,
    A. D. (2002). Dependence of the longitudinal resistance on edge potential and
    electron density in quantum Hall systems. <i>Physica B: Condensed Matter</i>,
    1726–1727. <a href="https://doi.org/10.1016/s0921-4526(99)02890-2">https://doi.org/10.1016/s0921-4526(99)02890-2</a>'
  bibtex: '@article{Heidtkamp_Lassen_Schneider_Reuter_Versen_Wieck_2002, title={Dependence
    of the longitudinal resistance on edge potential and electron density in quantum
    Hall systems}, DOI={<a href="https://doi.org/10.1016/s0921-4526(99)02890-2">10.1016/s0921-4526(99)02890-2</a>},
    journal={Physica B: Condensed Matter}, author={Heidtkamp, Christian and Lassen,
    Sabine and Schneider, Marcus and Reuter, Dirk and Versen, Martin and Wieck, Andreas
    D.}, year={2002}, pages={1726–1727} }'
  chicago: 'Heidtkamp, Christian, Sabine Lassen, Marcus Schneider, Dirk Reuter, Martin
    Versen, and Andreas D. Wieck. “Dependence of the Longitudinal Resistance on Edge
    Potential and Electron Density in Quantum Hall Systems.” <i>Physica B: Condensed
    Matter</i>, 2002, 1726–27. <a href="https://doi.org/10.1016/s0921-4526(99)02890-2">https://doi.org/10.1016/s0921-4526(99)02890-2</a>.'
  ieee: 'C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, and A. D. Wieck,
    “Dependence of the longitudinal resistance on edge potential and electron density
    in quantum Hall systems,” <i>Physica B: Condensed Matter</i>, pp. 1726–1727, 2002.'
  mla: 'Heidtkamp, Christian, et al. “Dependence of the Longitudinal Resistance on
    Edge Potential and Electron Density in Quantum Hall Systems.” <i>Physica B: Condensed
    Matter</i>, 2002, pp. 1726–27, doi:<a href="https://doi.org/10.1016/s0921-4526(99)02890-2">10.1016/s0921-4526(99)02890-2</a>.'
  short: 'C. Heidtkamp, S. Lassen, M. Schneider, D. Reuter, M. Versen, A.D. Wieck,
    Physica B: Condensed Matter (2002) 1726–1727.'
date_created: 2019-04-01T08:18:28Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1016/s0921-4526(99)02890-2
language:
- iso: eng
page: 1726-1727
publication: 'Physica B: Condensed Matter'
publication_identifier:
  issn:
  - 0921-4526
publication_status: published
status: public
title: Dependence of the longitudinal resistance on edge potential and electron density
  in quantum Hall systems
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8779'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
- first_name: A.
  full_name: Fischer, A.
  last_name: Fischer
citation:
  ama: Reuter D, Wieck AD, Fischer A. A compact electron beam evaporator for carbon
    doping in solid source molecular beam epitaxy. <i>Review of Scientific Instruments</i>.
    2002:3435-3438. doi:<a href="https://doi.org/10.1063/1.1149933">10.1063/1.1149933</a>
  apa: Reuter, D., Wieck, A. D., &#38; Fischer, A. (2002). A compact electron beam
    evaporator for carbon doping in solid source molecular beam epitaxy. <i>Review
    of Scientific Instruments</i>, 3435–3438. <a href="https://doi.org/10.1063/1.1149933">https://doi.org/10.1063/1.1149933</a>
  bibtex: '@article{Reuter_Wieck_Fischer_2002, title={A compact electron beam evaporator
    for carbon doping in solid source molecular beam epitaxy}, DOI={<a href="https://doi.org/10.1063/1.1149933">10.1063/1.1149933</a>},
    journal={Review of Scientific Instruments}, author={Reuter, Dirk and Wieck, A.
    D. and Fischer, A.}, year={2002}, pages={3435–3438} }'
  chicago: Reuter, Dirk, A. D. Wieck, and A. Fischer. “A Compact Electron Beam Evaporator
    for Carbon Doping in Solid Source Molecular Beam Epitaxy.” <i>Review of Scientific
    Instruments</i>, 2002, 3435–38. <a href="https://doi.org/10.1063/1.1149933">https://doi.org/10.1063/1.1149933</a>.
  ieee: D. Reuter, A. D. Wieck, and A. Fischer, “A compact electron beam evaporator
    for carbon doping in solid source molecular beam epitaxy,” <i>Review of Scientific
    Instruments</i>, pp. 3435–3438, 2002.
  mla: Reuter, Dirk, et al. “A Compact Electron Beam Evaporator for Carbon Doping
    in Solid Source Molecular Beam Epitaxy.” <i>Review of Scientific Instruments</i>,
    2002, pp. 3435–38, doi:<a href="https://doi.org/10.1063/1.1149933">10.1063/1.1149933</a>.
  short: D. Reuter, A.D. Wieck, A. Fischer, Review of Scientific Instruments (2002)
    3435–3438.
date_created: 2019-04-01T08:27:04Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1149933
language:
- iso: eng
page: 3435-3438
publication: Review of Scientific Instruments
publication_identifier:
  issn:
  - 0034-6748
  - 1089-7623
publication_status: published
status: public
title: A compact electron beam evaporator for carbon doping in solid source molecular
  beam epitaxy
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8780'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
- first_name: A.
  full_name: Fischer, A.
  last_name: Fischer
citation:
  ama: Reuter D, Wieck AD, Fischer A. A compact electron beam evaporator for carbon
    doping in solid source molecular beam epitaxy. <i>Review of Scientific Instruments</i>.
    2002:3435-3438. doi:<a href="https://doi.org/10.1063/1.1149933">10.1063/1.1149933</a>
  apa: Reuter, D., Wieck, A. D., &#38; Fischer, A. (2002). A compact electron beam
    evaporator for carbon doping in solid source molecular beam epitaxy. <i>Review
    of Scientific Instruments</i>, 3435–3438. <a href="https://doi.org/10.1063/1.1149933">https://doi.org/10.1063/1.1149933</a>
  bibtex: '@article{Reuter_Wieck_Fischer_2002, title={A compact electron beam evaporator
    for carbon doping in solid source molecular beam epitaxy}, DOI={<a href="https://doi.org/10.1063/1.1149933">10.1063/1.1149933</a>},
    journal={Review of Scientific Instruments}, author={Reuter, Dirk and Wieck, A.
    D. and Fischer, A.}, year={2002}, pages={3435–3438} }'
  chicago: Reuter, Dirk, A. D. Wieck, and A. Fischer. “A Compact Electron Beam Evaporator
    for Carbon Doping in Solid Source Molecular Beam Epitaxy.” <i>Review of Scientific
    Instruments</i>, 2002, 3435–38. <a href="https://doi.org/10.1063/1.1149933">https://doi.org/10.1063/1.1149933</a>.
  ieee: D. Reuter, A. D. Wieck, and A. Fischer, “A compact electron beam evaporator
    for carbon doping in solid source molecular beam epitaxy,” <i>Review of Scientific
    Instruments</i>, pp. 3435–3438, 2002.
  mla: Reuter, Dirk, et al. “A Compact Electron Beam Evaporator for Carbon Doping
    in Solid Source Molecular Beam Epitaxy.” <i>Review of Scientific Instruments</i>,
    2002, pp. 3435–38, doi:<a href="https://doi.org/10.1063/1.1149933">10.1063/1.1149933</a>.
  short: D. Reuter, A.D. Wieck, A. Fischer, Review of Scientific Instruments (2002)
    3435–3438.
date_created: 2019-04-01T08:28:09Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1149933
language:
- iso: eng
page: 3435-3438
publication: Review of Scientific Instruments
publication_identifier:
  issn:
  - 0034-6748
  - 1089-7623
publication_status: published
status: public
title: A compact electron beam evaporator for carbon doping in solid source molecular
  beam epitaxy
type: journal_article
user_id: '42514'
year: '2002'
...