---
_id: '39904'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Hilleringmann U, Goser K. Optoelectronic system integration on silicon: waveguides,
    photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE Transactions on Electron
    Devices</i>. 2002;42(5):841-846. doi:<a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>'
  apa: 'Hilleringmann, U., &#38; Goser, K. (2002). Optoelectronic system integration
    on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. <i>IEEE
    Transactions on Electron Devices</i>, <i>42</i>(5), 841–846. <a href="https://doi.org/10.1109/16.381978">https://doi.org/10.1109/16.381978</a>'
  bibtex: '@article{Hilleringmann_Goser_2002, title={Optoelectronic system integration
    on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip}, volume={42},
    DOI={<a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>}, number={5},
    journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical
    and Electronics Engineers (IEEE)}, author={Hilleringmann, Ulrich and Goser, K.},
    year={2002}, pages={841–846} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration
    on Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE
    Transactions on Electron Devices</i> 42, no. 5 (2002): 841–46. <a href="https://doi.org/10.1109/16.381978">https://doi.org/10.1109/16.381978</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Optoelectronic system integration on silicon:
    waveguides, photodetectors, and VLSI CMOS circuits on one chip,” <i>IEEE Transactions
    on Electron Devices</i>, vol. 42, no. 5, pp. 841–846, 2002, doi: <a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>.'
  mla: 'Hilleringmann, Ulrich, and K. Goser. “Optoelectronic System Integration on
    Silicon: Waveguides, Photodetectors, and VLSI CMOS Circuits on One Chip.” <i>IEEE
    Transactions on Electron Devices</i>, vol. 42, no. 5, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 841–46, doi:<a href="https://doi.org/10.1109/16.381978">10.1109/16.381978</a>.'
  short: U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices 42 (2002)
    841–846.
date_created: 2023-01-25T09:22:34Z
date_updated: 2023-03-21T09:51:52Z
department:
- _id: '59'
doi: 10.1109/16.381978
intvolume: '        42'
issue: '5'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 841-846
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: 'Optoelectronic system integration on silicon: waveguides, photodetectors,
  and VLSI CMOS circuits on one chip'
type: journal_article
user_id: '20179'
volume: 42
year: '2002'
...
---
_id: '39912'
author:
- first_name: I.
  full_name: Schönstein, I.
  last_name: Schönstein
- first_name: J.
  full_name: Müller, J.
  last_name: Müller
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Schönstein I, Müller J, Hilleringmann U, Goser K. Characterization of submicron
    NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>.
    2002;21(1-4):363-366. doi:<a href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>
  apa: Schönstein, I., Müller, J., Hilleringmann, U., &#38; Goser, K. (2002). Characterization
    of submicron NMOS devices due to visible light emission. <i>Microelectronic Engineering</i>,
    <i>21</i>(1–4), 363–366. <a href="https://doi.org/10.1016/0167-9317(93)90092-j">https://doi.org/10.1016/0167-9317(93)90092-j</a>
  bibtex: '@article{Schönstein_Müller_Hilleringmann_Goser_2002, title={Characterization
    of submicron NMOS devices due to visible light emission}, volume={21}, DOI={<a
    href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K.},
    year={2002}, pages={363–366} }'
  chicago: 'Schönstein, I., J. Müller, Ulrich Hilleringmann, and K. Goser. “Characterization
    of Submicron NMOS Devices Due to Visible Light Emission.” <i>Microelectronic Engineering</i>
    21, no. 1–4 (2002): 363–66. <a href="https://doi.org/10.1016/0167-9317(93)90092-j">https://doi.org/10.1016/0167-9317(93)90092-j</a>.'
  ieee: 'I. Schönstein, J. Müller, U. Hilleringmann, and K. Goser, “Characterization
    of submicron NMOS devices due to visible light emission,” <i>Microelectronic Engineering</i>,
    vol. 21, no. 1–4, pp. 363–366, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>.'
  mla: Schönstein, I., et al. “Characterization of Submicron NMOS Devices Due to Visible
    Light Emission.” <i>Microelectronic Engineering</i>, vol. 21, no. 1–4, Elsevier
    BV, 2002, pp. 363–66, doi:<a href="https://doi.org/10.1016/0167-9317(93)90092-j">10.1016/0167-9317(93)90092-j</a>.
  short: I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering
    21 (2002) 363–366.
date_created: 2023-01-25T09:26:21Z
date_updated: 2023-03-21T09:50:03Z
department:
- _id: '59'
doi: 10.1016/0167-9317(93)90092-j
intvolume: '        21'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 363-366
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Characterization of submicron NMOS devices due to visible light emission
type: journal_article
user_id: '20179'
volume: 21
year: '2002'
...
---
_id: '39914'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
    photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>.
    2002;19(1-4):211-214. doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>
  apa: Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic
    Engineering</i>, <i>19</i>(1–4), 211–214. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>
  bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
    DOI={<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
    of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i> 19, no. 1–4 (2002): 211–14. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
    waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>,
    vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.'
  mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
    Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.
  short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:23Z
date_updated: 2023-03-21T09:49:25Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
  circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39906'
author:
- first_name: E.
  full_name: Brass, E.
  last_name: Brass
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Brass E, Hilleringmann U, Schumacher K. System integration of optical devices
    and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010.
    doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>
  apa: Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration
    of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State
    Circuits</i>, <i>29</i>(8), 1006–1010. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>
  bibtex: '@article{Brass_Hilleringmann_Schumacher_2002, title={System integration
    of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>},
    number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann,
    Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }'
  chicago: 'Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration
    of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State
    Circuits</i> 29, no. 8 (2002): 1006–10. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>.'
  ieee: 'E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical
    devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>,
    vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.'
  mla: Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.”
    <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.
  short: E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits
    29 (2002) 1006–1010.
date_created: 2023-01-25T09:23:36Z
date_updated: 2023-03-21T09:51:19Z
department:
- _id: '59'
doi: 10.1109/4.297714
intvolume: '        29'
issue: '8'
keyword:
- Electrical and Electronic Engineering
language:
- iso: eng
page: 1006-1010
publication: IEEE Journal of Solid-State Circuits
publication_identifier:
  issn:
  - 0018-9200
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: System integration of optical devices and analog CMOS amplifiers
type: journal_article
user_id: '20179'
volume: 29
year: '2002'
...
---
_id: '39907'
author:
- first_name: E.
  full_name: Brass, E.
  last_name: Brass
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Brass E, Hilleringmann U, Schumacher K. System integration of optical devices
    and analog CMOS amplifiers. <i>IEEE Journal of Solid-State Circuits</i>. 2002;29(8):1006-1010.
    doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>
  apa: Brass, E., Hilleringmann, U., &#38; Schumacher, K. (2002). System integration
    of optical devices and analog CMOS amplifiers. <i>IEEE Journal of Solid-State
    Circuits</i>, <i>29</i>(8), 1006–1010. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>
  bibtex: '@article{Brass_Hilleringmann_Schumacher_2002, title={System integration
    of optical devices and analog CMOS amplifiers}, volume={29}, DOI={<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>},
    number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Brass, E. and Hilleringmann,
    Ulrich and Schumacher, K.}, year={2002}, pages={1006–1010} }'
  chicago: 'Brass, E., Ulrich Hilleringmann, and K. Schumacher. “System Integration
    of Optical Devices and Analog CMOS Amplifiers.” <i>IEEE Journal of Solid-State
    Circuits</i> 29, no. 8 (2002): 1006–10. <a href="https://doi.org/10.1109/4.297714">https://doi.org/10.1109/4.297714</a>.'
  ieee: 'E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical
    devices and analog CMOS amplifiers,” <i>IEEE Journal of Solid-State Circuits</i>,
    vol. 29, no. 8, pp. 1006–1010, 2002, doi: <a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.'
  mla: Brass, E., et al. “System Integration of Optical Devices and Analog CMOS Amplifiers.”
    <i>IEEE Journal of Solid-State Circuits</i>, vol. 29, no. 8, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 1006–10, doi:<a href="https://doi.org/10.1109/4.297714">10.1109/4.297714</a>.
  short: E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits
    29 (2002) 1006–1010.
date_created: 2023-01-25T09:24:15Z
date_updated: 2023-03-21T09:51:33Z
department:
- _id: '59'
doi: 10.1109/4.297714
intvolume: '        29'
issue: '8'
keyword:
- Electrical and Electronic Engineering
language:
- iso: eng
page: 1006-1010
publication: IEEE Journal of Solid-State Circuits
publication_identifier:
  issn:
  - 0018-9200
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: System integration of optical devices and analog CMOS amplifiers
type: journal_article
user_id: '20179'
volume: 29
year: '2002'
...
---
_id: '39899'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser K. Characterisation of sub-100 nm-MOS-transistors
    processed by optical lithography and a sidewall-etchback technique. <i>Microelectronic
    Engineering</i>. 2002;30(1-4):431-434. doi:<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Characterisation
    of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback
    technique. <i>Microelectronic Engineering</i>, <i>30</i>(1–4), 431–434. <a href="https://doi.org/10.1016/0167-9317(95)00280-4">https://doi.org/10.1016/0167-9317(95)00280-4</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Characterisation of
    sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback
    technique}, volume={30}, DOI={<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={431–434} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Characterisation
    of Sub-100 Nm-MOS-Transistors Processed by Optical Lithography and a Sidewall-Etchback
    Technique.” <i>Microelectronic Engineering</i> 30, no. 1–4 (2002): 431–34. <a
    href="https://doi.org/10.1016/0167-9317(95)00280-4">https://doi.org/10.1016/0167-9317(95)00280-4</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100
    nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,”
    <i>Microelectronic Engineering</i>, vol. 30, no. 1–4, pp. 431–434, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>.'
  mla: Horstmann, J. T., et al. “Characterisation of Sub-100 Nm-MOS-Transistors Processed
    by Optical Lithography and a Sidewall-Etchback Technique.” <i>Microelectronic
    Engineering</i>, vol. 30, no. 1–4, Elsevier BV, 2002, pp. 431–34, doi:<a href="https://doi.org/10.1016/0167-9317(95)00280-4">10.1016/0167-9317(95)00280-4</a>.
  short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 30
    (2002) 431–434.
date_created: 2023-01-25T09:20:20Z
date_updated: 2023-03-21T09:53:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(95)00280-4
intvolume: '        30'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 431-434
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Characterisation of sub-100 nm-MOS-transistors processed by optical lithography
  and a sidewall-etchback technique
type: journal_article
user_id: '20179'
volume: 30
year: '2002'
...
---
_id: '39925'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial
    neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>
  apa: Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI
    technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44.
    <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>
  bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies
    for artificial neural networks}, volume={9}, DOI={<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>},
    number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics
    Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.
    and Schumacher, K.}, year={2002}, pages={28–44} }'
  chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI
    Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002):
    28–44. <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>.'
  ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies
    for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44,
    2002, doi: <a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.'
  mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE
    Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE),
    2002, pp. 28–44, doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.
  short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002)
    28–44.
date_created: 2023-01-25T09:33:18Z
date_updated: 2023-03-21T09:57:17Z
department:
- _id: '59'
doi: 10.1109/40.42985
intvolume: '         9'
issue: '6'
keyword:
- Electrical and Electronic Engineering
- Hardware and Architecture
- Software
language:
- iso: eng
page: 28-44
publication: IEEE Micro
publication_identifier:
  issn:
  - 0272-1732
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: VLSI technologies for artificial neural networks
type: journal_article
user_id: '20179'
volume: 9
year: '2002'
...
---
_id: '39882'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. A novel insulation technique for
    smart power switching devices and very high voltage ICs above 10 kV. <i>Microelectronic
    Engineering</i>. 2002;53(1-4):525-528. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). A novel insulation
    technique for smart power switching devices and very high voltage ICs above 10
    kV. <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 525–528. <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">https://doi.org/10.1016/s0167-9317(00)00370-1</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={A novel insulation
    technique for smart power switching devices and very high voltage ICs above 10
    kV}, volume={53}, DOI={<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={525–528} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “A Novel Insulation
    Technique for Smart Power Switching Devices and Very High Voltage ICs above 10
    KV.” <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 525–28. <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">https://doi.org/10.1016/s0167-9317(00)00370-1</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique
    for smart power switching devices and very high voltage ICs above 10 kV,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 525–528, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>.'
  mla: Mankowski, V., et al. “A Novel Insulation Technique for Smart Power Switching
    Devices and Very High Voltage ICs above 10 KV.” <i>Microelectronic Engineering</i>,
    vol. 53, no. 1–4, Elsevier BV, 2002, pp. 525–28, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00370-1">10.1016/s0167-9317(00)00370-1</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    53 (2002) 525–528.
date_created: 2023-01-25T09:10:13Z
date_updated: 2023-03-21T10:00:06Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00370-1
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 525-528
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A novel insulation technique for smart power switching devices and very high
  voltage ICs above 10 kV
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39879'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser K. 1/f-Noise of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique. <i>Microelectronic
    Engineering</i>. 2002;53(1-4):213-216. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). 1/f-Noise of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique.
    <i>Microelectronic Engineering</i>, <i>53</i>(1–4), 213–216. <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">https://doi.org/10.1016/s0167-9317(00)00299-9</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={1/f-Noise of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique},
    volume={53}, DOI={<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={213–216} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “1/f-Noise of Sub-100
    Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”
    <i>Microelectronic Engineering</i> 53, no. 1–4 (2002): 213–16. <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">https://doi.org/10.1016/s0167-9317(00)00299-9</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “1/f-Noise of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 213–216, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>.'
  mla: Horstmann, J. T., et al. “1/f-Noise of Sub-100 Nm-MOS-Transistors Fabricated
    by a Special Deposition and Etchback Technique.” <i>Microelectronic Engineering</i>,
    vol. 53, no. 1–4, Elsevier BV, 2002, pp. 213–16, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00299-9">10.1016/s0167-9317(00)00299-9</a>.
  short: J.T. Horstmann, U. Hilleringmann, K. Goser, Microelectronic Engineering 53
    (2002) 213–216.
date_created: 2023-01-25T09:08:36Z
date_updated: 2023-03-21T10:02:46Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00299-9
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 213-216
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition
  and etchback technique
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39880'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique. In: <i>2000 26th Annual
    Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International
    Conference on Industrial Electronics, Control and Instrumentation. 21st Century
    Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE; 2002.
    doi:<a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>'
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Noise analysis
    of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback
    technique. <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society.
    IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
    and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
    No.00CH37141)</i>. <a href="https://doi.org/10.1109/iecon.2000.972560">https://doi.org/10.1109/iecon.2000.972560</a>
  bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis
    of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback
    technique}, DOI={<a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>},
    booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society.
    IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
    and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
    No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich
    and Goser, K.}, year={2002} }'
  chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of
    Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”
    In <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society.
    IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
    and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
    No.00CH37141)</i>. IEEE, 2002. <a href="https://doi.org/10.1109/iecon.2000.972560">https://doi.org/10.1109/iecon.2000.972560</a>.
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique,”
    2002, doi: <a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>.'
  mla: Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated
    by a Special Deposition and Etchback Technique.” <i>2000 26th Annual Conference
    of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International
    Conference on Industrial Electronics, Control and Instrumentation. 21st Century
    Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>, IEEE, 2002,
    doi:<a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>.
  short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference
    of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International
    Conference on Industrial Electronics, Control and Instrumentation. 21st Century
    Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.'
date_created: 2023-01-25T09:09:18Z
date_updated: 2023-03-21T10:02:30Z
department:
- _id: '59'
doi: 10.1109/iecon.2000.972560
language:
- iso: eng
publication: 2000 26th Annual Conference of the IEEE Industrial Electronics Society.
  IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
  and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
  No.00CH37141)
publication_status: published
publisher: IEEE
status: public
title: Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition
  and etchback technique
type: conference
user_id: '20179'
year: '2002'
...
---
_id: '39881'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: 'Horstmann JT, Hilleringmann U, Goser K. Noise analysis of sub-100 nm-MOS-transistors
    fabricated by a special deposition and etchback technique. In: <i>2000 26th Annual
    Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International
    Conference on Industrial Electronics, Control and Instrumentation. 21st Century
    Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>. IEEE; 2002.
    doi:<a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>'
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. (2002). Noise analysis
    of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback
    technique. <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society.
    IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
    and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
    No.00CH37141)</i>. <a href="https://doi.org/10.1109/iecon.2000.972560">https://doi.org/10.1109/iecon.2000.972560</a>
  bibtex: '@inproceedings{Horstmann_Hilleringmann_Goser_2002, title={Noise analysis
    of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback
    technique}, DOI={<a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>},
    booktitle={2000 26th Annual Conference of the IEEE Industrial Electronics Society.
    IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
    and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
    No.00CH37141)}, publisher={IEEE}, author={Horstmann, J.T. and Hilleringmann, Ulrich
    and Goser, K.}, year={2002} }'
  chicago: Horstmann, J.T., Ulrich Hilleringmann, and K. Goser. “Noise Analysis of
    Sub-100 Nm-MOS-Transistors Fabricated by a Special Deposition and Etchback Technique.”
    In <i>2000 26th Annual Conference of the IEEE Industrial Electronics Society.
    IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
    and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
    No.00CH37141)</i>. IEEE, 2002. <a href="https://doi.org/10.1109/iecon.2000.972560">https://doi.org/10.1109/iecon.2000.972560</a>.
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100
    nm-MOS-transistors fabricated by a special deposition and etchback technique,”
    2002, doi: <a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>.'
  mla: Horstmann, J. T., et al. “Noise Analysis of Sub-100 Nm-MOS-Transistors Fabricated
    by a Special Deposition and Etchback Technique.” <i>2000 26th Annual Conference
    of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International
    Conference on Industrial Electronics, Control and Instrumentation. 21st Century
    Technologies and Industrial Opportunities (Cat. No.00CH37141)</i>, IEEE, 2002,
    doi:<a href="https://doi.org/10.1109/iecon.2000.972560">10.1109/iecon.2000.972560</a>.
  short: 'J.T. Horstmann, U. Hilleringmann, K. Goser, in: 2000 26th Annual Conference
    of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International
    Conference on Industrial Electronics, Control and Instrumentation. 21st Century
    Technologies and Industrial Opportunities (Cat. No.00CH37141), IEEE, 2002.'
date_created: 2023-01-25T09:09:53Z
date_updated: 2023-03-21T10:02:17Z
department:
- _id: '59'
doi: 10.1109/iecon.2000.972560
language:
- iso: eng
publication: 2000 26th Annual Conference of the IEEE Industrial Electronics Society.
  IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control
  and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat.
  No.00CH37141)
publication_status: published
publisher: IEEE
status: public
title: Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition
  and etchback technique
type: conference
user_id: '20179'
year: '2002'
...
---
_id: '39919'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Knospe, K.
  last_name: Knospe
- first_name: C.
  full_name: Heite, C.
  last_name: Heite
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Knospe K, Heite C, Schumacher K, Goser K. A silicon based
    technology for monolithic integration of waveguides and VLSI CMOS circuits. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):289-292. doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>
  apa: Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &#38; Goser, K. (2002).
    A silicon based technology for monolithic integration of waveguides and VLSI CMOS
    circuits. <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 289–292. <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>
  bibtex: '@article{Hilleringmann_Knospe_Heite_Schumacher_Goser_2002, title={A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K.
    and Goser, K.}, year={2002}, pages={289–292} }'
  chicago: 'Hilleringmann, Ulrich, K. Knospe, C. Heite, K. Schumacher, and K. Goser.
    “A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI
    CMOS Circuits.” <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 289–92.
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">https://doi.org/10.1016/0167-9317(91)90231-2</a>.'
  ieee: 'U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon
    based technology for monolithic integration of waveguides and VLSI CMOS circuits,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 289–292, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Silicon Based Technology for Monolithic Integration
    of Waveguides and VLSI CMOS Circuits.” <i>Microelectronic Engineering</i>, vol.
    15, no. 1–4, Elsevier BV, 2002, pp. 289–92, doi:<a href="https://doi.org/10.1016/0167-9317(91)90231-2">10.1016/0167-9317(91)90231-2</a>.
  short: U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic
    Engineering 15 (2002) 289–292.
date_created: 2023-01-25T09:29:32Z
date_updated: 2023-03-22T10:29:08Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90231-2
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 289-292
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A silicon based technology for monolithic integration of waveguides and VLSI
  CMOS circuits
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39926'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Goser K, Hilleringmann U, Rueckert U, Schumacher K. VLSI technologies for artificial
    neural networks. <i>IEEE Micro</i>. 2002;9(6):28-44. doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>
  apa: Goser, K., Hilleringmann, U., Rueckert, U., &#38; Schumacher, K. (2002). VLSI
    technologies for artificial neural networks. <i>IEEE Micro</i>, <i>9</i>(6), 28–44.
    <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>
  bibtex: '@article{Goser_Hilleringmann_Rueckert_Schumacher_2002, title={VLSI technologies
    for artificial neural networks}, volume={9}, DOI={<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>},
    number={6}, journal={IEEE Micro}, publisher={Institute of Electrical and Electronics
    Engineers (IEEE)}, author={Goser, K. and Hilleringmann, Ulrich and Rueckert, U.
    and Schumacher, K.}, year={2002}, pages={28–44} }'
  chicago: 'Goser, K., Ulrich Hilleringmann, U. Rueckert, and K. Schumacher. “VLSI
    Technologies for Artificial Neural Networks.” <i>IEEE Micro</i> 9, no. 6 (2002):
    28–44. <a href="https://doi.org/10.1109/40.42985">https://doi.org/10.1109/40.42985</a>.'
  ieee: 'K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies
    for artificial neural networks,” <i>IEEE Micro</i>, vol. 9, no. 6, pp. 28–44,
    2002, doi: <a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.'
  mla: Goser, K., et al. “VLSI Technologies for Artificial Neural Networks.” <i>IEEE
    Micro</i>, vol. 9, no. 6, Institute of Electrical and Electronics Engineers (IEEE),
    2002, pp. 28–44, doi:<a href="https://doi.org/10.1109/40.42985">10.1109/40.42985</a>.
  short: K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro 9 (2002)
    28–44.
date_created: 2023-01-25T09:33:50Z
date_updated: 2023-03-22T10:36:45Z
department:
- _id: '59'
doi: 10.1109/40.42985
intvolume: '         9'
issue: '6'
keyword:
- Electrical and Electronic Engineering
- Hardware and Architecture
- Software
language:
- iso: eng
page: 28-44
publication: IEEE Micro
publication_identifier:
  issn:
  - 0272-1732
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: VLSI technologies for artificial neural networks
type: journal_article
user_id: '20179'
volume: 9
year: '2002'
...
---
_id: '39892'
author:
- first_name: F.
  full_name: Blum, F.
  last_name: Blum
- first_name: A.
  full_name: Denisenko, A.
  last_name: Denisenko
- first_name: R.
  full_name: Job, R.
  last_name: Job
- first_name: D.
  full_name: Borchert, D.
  last_name: Borchert
- first_name: W.
  full_name: Weber, W.
  last_name: Weber
- first_name: J.V.
  full_name: Borany, J.V.
  last_name: Borany
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: W.R.
  full_name: Fahrner, W.R.
  last_name: Fahrner
citation:
  ama: 'Blum F, Denisenko A, Job R, et al. Nuclear radiation detectors on various
    type diamonds. In: <i>IECON ’98. Proceedings of the 24th Annual Conference of
    the IEEE Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE; 2002. doi:<a
    href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>'
  apa: Blum, F., Denisenko, A., Job, R., Borchert, D., Weber, W., Borany, J. V., Hilleringmann,
    U., &#38; Fahrner, W. R. (2002). Nuclear radiation detectors on various type diamonds.
    <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial
    Electronics Society (Cat. No.98CH36200)</i>. <a href="https://doi.org/10.1109/iecon.1998.724097">https://doi.org/10.1109/iecon.1998.724097</a>
  bibtex: '@inproceedings{Blum_Denisenko_Job_Borchert_Weber_Borany_Hilleringmann_Fahrner_2002,
    title={Nuclear radiation detectors on various type diamonds}, DOI={<a href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>},
    booktitle={IECON ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial
    Electronics Society (Cat. No.98CH36200)}, publisher={IEEE}, author={Blum, F. and
    Denisenko, A. and Job, R. and Borchert, D. and Weber, W. and Borany, J.V. and
    Hilleringmann, Ulrich and Fahrner, W.R.}, year={2002} }'
  chicago: Blum, F., A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, Ulrich
    Hilleringmann, and W.R. Fahrner. “Nuclear Radiation Detectors on Various Type
    Diamonds.” In <i>IECON ’98. Proceedings of the 24th Annual Conference of the IEEE
    Industrial Electronics Society (Cat. No.98CH36200)</i>. IEEE, 2002. <a href="https://doi.org/10.1109/iecon.1998.724097">https://doi.org/10.1109/iecon.1998.724097</a>.
  ieee: 'F. Blum <i>et al.</i>, “Nuclear radiation detectors on various type diamonds,”
    2002, doi: <a href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>.'
  mla: Blum, F., et al. “Nuclear Radiation Detectors on Various Type Diamonds.” <i>IECON
    ’98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics
    Society (Cat. No.98CH36200)</i>, IEEE, 2002, doi:<a href="https://doi.org/10.1109/iecon.1998.724097">10.1109/iecon.1998.724097</a>.
  short: 'F. Blum, A. Denisenko, R. Job, D. Borchert, W. Weber, J.V. Borany, U. Hilleringmann,
    W.R. Fahrner, in: IECON ’98. Proceedings of the 24th Annual Conference of the
    IEEE Industrial Electronics Society (Cat. No.98CH36200), IEEE, 2002.'
date_created: 2023-01-25T09:15:11Z
date_updated: 2023-03-22T10:38:37Z
department:
- _id: '59'
doi: 10.1109/iecon.1998.724097
language:
- iso: eng
publication: IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial
  Electronics Society (Cat. No.98CH36200)
publication_status: published
publisher: IEEE
status: public
title: Nuclear radiation detectors on various type diamonds
type: conference
user_id: '20179'
year: '2002'
...
---
_id: '43294'
abstract:
- lang: eng
  text: The quantum dynamics of an ensemble of interacting electrons in an array of
    random scatterers is treated using a numerical approach for the calculation of
    average values of quantum operators and time correlation functions in the Wigner
    representation. The Fourier transform of the product of matrix elements of the
    dynamic propagators obeys an integral Wigner-Liouville-type equation. Initial
    conditions for this equation are given by the Fourier transform of the Wiener
    path-integral representation of the matrix elements of the propagators at the
    chosen initial times. This approach combines both molecular dynamics and Monte
    Carlo methods and computes numerical traces and spectra of the relevant dynamical
    quantities such as momentum-momentum correlation functions and spatial dispersions.
    Considering, as an application, a system with fixed scatterers, the results clearly
    demonstrate that the many-particle interaction between the electrons leads to
    an enhancement of the conductivity and spatial dispersion compared to the noninteracting
    case.
article_number: '165124'
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: V.
  full_name: Filinov, V.
  last_name: Filinov
- first_name: P.
  full_name: Thomas, P.
  last_name: Thomas
- first_name: I.
  full_name: Varga, I.
  last_name: Varga
- first_name: M.
  full_name: Bonitz, M.
  last_name: Bonitz
- first_name: V.
  full_name: Fortov, V.
  last_name: Fortov
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
citation:
  ama: 'Meier T, Filinov V, Thomas P, et al. Interacting electrons in a one-dimensional
    random array of scatterers: A quantum dynamics and Monte Carlo study. <i>Physical
    Review B</i>. 2002;65(16). doi:<a href="https://doi.org/10.1103/PhysRevB.65.165124">10.1103/PhysRevB.65.165124</a>'
  apa: 'Meier, T., Filinov, V., Thomas, P., Varga, I., Bonitz, M., Fortov, V., &#38;
    Koch, S. W. (2002). Interacting electrons in a one-dimensional random array of
    scatterers: A quantum dynamics and Monte Carlo study. <i>Physical Review B</i>,
    <i>65</i>(16), Article 165124. <a href="https://doi.org/10.1103/PhysRevB.65.165124">https://doi.org/10.1103/PhysRevB.65.165124</a>'
  bibtex: '@article{Meier_Filinov_Thomas_Varga_Bonitz_Fortov_Koch_2002, title={Interacting
    electrons in a one-dimensional random array of scatterers: A quantum dynamics
    and Monte Carlo study}, volume={65}, DOI={<a href="https://doi.org/10.1103/PhysRevB.65.165124">10.1103/PhysRevB.65.165124</a>},
    number={16165124}, journal={Physical Review B}, publisher={American Physical Society},
    author={Meier, Torsten and Filinov, V. and Thomas, P. and Varga, I. and Bonitz,
    M. and Fortov, V. and Koch, S.W.}, year={2002} }'
  chicago: 'Meier, Torsten, V. Filinov, P. Thomas, I. Varga, M. Bonitz, V. Fortov,
    and S.W. Koch. “Interacting Electrons in a One-Dimensional Random Array of Scatterers:
    A Quantum Dynamics and Monte Carlo Study.” <i>Physical Review B</i> 65, no. 16
    (2002). <a href="https://doi.org/10.1103/PhysRevB.65.165124">https://doi.org/10.1103/PhysRevB.65.165124</a>.'
  ieee: 'T. Meier <i>et al.</i>, “Interacting electrons in a one-dimensional random
    array of scatterers: A quantum dynamics and Monte Carlo study,” <i>Physical Review
    B</i>, vol. 65, no. 16, Art. no. 165124, 2002, doi: <a href="https://doi.org/10.1103/PhysRevB.65.165124">10.1103/PhysRevB.65.165124</a>.'
  mla: 'Meier, Torsten, et al. “Interacting Electrons in a One-Dimensional Random
    Array of Scatterers: A Quantum Dynamics and Monte Carlo Study.” <i>Physical Review
    B</i>, vol. 65, no. 16, 165124, American Physical Society, 2002, doi:<a href="https://doi.org/10.1103/PhysRevB.65.165124">10.1103/PhysRevB.65.165124</a>.'
  short: T. Meier, V. Filinov, P. Thomas, I. Varga, M. Bonitz, V. Fortov, S.W. Koch,
    Physical Review B 65 (2002).
date_created: 2023-04-02T13:23:14Z
date_updated: 2023-04-02T13:23:17Z
department:
- _id: '293'
doi: 10.1103/PhysRevB.65.165124
extern: '1'
intvolume: '        65'
issue: '16'
language:
- iso: eng
main_file_link:
- url: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.65.165124
publication: Physical Review B
publication_status: published
publisher: American Physical Society
status: public
title: 'Interacting electrons in a one-dimensional random array of scatterers: A quantum
  dynamics and Monte Carlo study'
type: journal_article
user_id: '49063'
volume: 65
year: '2002'
...
---
_id: '43295'
abstract:
- lang: eng
  text: The influence of coherent photoexcited excitons on the absorption spectra
    and the Four Wave Mixing response of ZnSe/ZnMgSSe quantum wells is investigated
    for various polarization configurations. For purely resonant excitation at the
    heavy-hole-exciton a blue shift and an increasing homogeneous line width of the
    exciton absorption peak is found. The clear and stable blue shift shows a linear
    dependence on excitation fluence both in experiment and theory with different
    slopes for the different pump and probe polarization configurations. The equivalence
    of pump and probe, and Four Wave Mixing results is shown experimentally.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: S.
  full_name: Wachter, S.
  last_name: Wachter
- first_name: M.
  full_name: Maute, M.
  last_name: Maute
- first_name: H.
  full_name: Kalt, H.
  last_name: Kalt
- first_name: I.
  full_name: Galbraith, I.
  last_name: Galbraith
- first_name: C.
  full_name: Sieh, C.
  last_name: Sieh
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
citation:
  ama: 'Meier T, Wachter S, Maute M, et al. Excitation induced shift and broadening
    of the exciton resonance. <i>Physica B: Condensed Matter</i>. 2002;314(1-4):309-313.
    doi:<a href="https://doi.org/10.1016/S0921-4526(01)01400-4">10.1016/S0921-4526(01)01400-4</a>'
  apa: 'Meier, T., Wachter, S., Maute, M., Kalt, H., Galbraith, I., Sieh, C., &#38;
    Koch, S. W. (2002). Excitation induced shift and broadening of the exciton resonance.
    <i>Physica B: Condensed Matter</i>, <i>314</i>(1–4), 309–313. <a href="https://doi.org/10.1016/S0921-4526(01)01400-4">https://doi.org/10.1016/S0921-4526(01)01400-4</a>'
  bibtex: '@article{Meier_Wachter_Maute_Kalt_Galbraith_Sieh_Koch_2002, title={Excitation
    induced shift and broadening of the exciton resonance}, volume={314}, DOI={<a
    href="https://doi.org/10.1016/S0921-4526(01)01400-4">10.1016/S0921-4526(01)01400-4</a>},
    number={1–4}, journal={Physica B: Condensed Matter}, publisher={North-Holland},
    author={Meier, Torsten and Wachter, S. and Maute, M. and Kalt, H. and Galbraith,
    I. and Sieh, C. and Koch, S.W.}, year={2002}, pages={309–313} }'
  chicago: 'Meier, Torsten, S. Wachter, M. Maute, H. Kalt, I. Galbraith, C. Sieh,
    and S.W. Koch. “Excitation Induced Shift and Broadening of the Exciton Resonance.”
    <i>Physica B: Condensed Matter</i> 314, no. 1–4 (2002): 309–13. <a href="https://doi.org/10.1016/S0921-4526(01)01400-4">https://doi.org/10.1016/S0921-4526(01)01400-4</a>.'
  ieee: 'T. Meier <i>et al.</i>, “Excitation induced shift and broadening of the exciton
    resonance,” <i>Physica B: Condensed Matter</i>, vol. 314, no. 1–4, pp. 309–313,
    2002, doi: <a href="https://doi.org/10.1016/S0921-4526(01)01400-4">10.1016/S0921-4526(01)01400-4</a>.'
  mla: 'Meier, Torsten, et al. “Excitation Induced Shift and Broadening of the Exciton
    Resonance.” <i>Physica B: Condensed Matter</i>, vol. 314, no. 1–4, North-Holland,
    2002, pp. 309–13, doi:<a href="https://doi.org/10.1016/S0921-4526(01)01400-4">10.1016/S0921-4526(01)01400-4</a>.'
  short: 'T. Meier, S. Wachter, M. Maute, H. Kalt, I. Galbraith, C. Sieh, S.W. Koch,
    Physica B: Condensed Matter 314 (2002) 309–313.'
date_created: 2023-04-02T13:26:07Z
date_updated: 2023-04-02T13:26:10Z
department:
- _id: '293'
doi: 10.1016/S0921-4526(01)01400-4
extern: '1'
intvolume: '       314'
issue: 1-4
language:
- iso: eng
main_file_link:
- url: https://www.sciencedirect.com/science/article/abs/pii/S0921452601014004
page: 309-313
publication: 'Physica B: Condensed Matter'
publication_status: published
publisher: North-Holland
status: public
title: Excitation induced shift and broadening of the exciton resonance
type: journal_article
user_id: '49063'
volume: 314
year: '2002'
...
---
_id: '43292'
abstract:
- lang: eng
  text: Physicists have realized during the last two decades that the physical properties
    of many condensed-matter systems are often best described in terms of lumps of
    charge, known as quasiparticles, rather than by electrons and ions. In a crystal
    under equlibrium conditions, for example, the mutual repulsion of the electrons
    leads to a cloud of positive charge surrounding each individual electron. This
    "dressing" of electrons leads to charge screening. In other words, a test charge
    placed far from an electron will feel the influence of a new entity with a smaller
    charge, rather than the charge on the "bare" electron.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
citation:
  ama: Meier T, Koch SW. Particles get all dressed up. <i>Physics World</i>. 2002;15(2):24-25.
    doi:<a href="https://doi.org/10.1088/2058-7058/15/2/36">10.1088/2058-7058/15/2/36</a>
  apa: Meier, T., &#38; Koch, S. W. (2002). Particles get all dressed up. <i>Physics
    World</i>, <i>15</i>(2), 24–25. <a href="https://doi.org/10.1088/2058-7058/15/2/36">https://doi.org/10.1088/2058-7058/15/2/36</a>
  bibtex: '@article{Meier_Koch_2002, title={Particles get all dressed up}, volume={15},
    DOI={<a href="https://doi.org/10.1088/2058-7058/15/2/36">10.1088/2058-7058/15/2/36</a>},
    number={2}, journal={Physics World}, publisher={IOP Publishing}, author={Meier,
    Torsten and Koch, S.W.}, year={2002}, pages={24–25} }'
  chicago: 'Meier, Torsten, and S.W. Koch. “Particles Get All Dressed Up.” <i>Physics
    World</i> 15, no. 2 (2002): 24–25. <a href="https://doi.org/10.1088/2058-7058/15/2/36">https://doi.org/10.1088/2058-7058/15/2/36</a>.'
  ieee: 'T. Meier and S. W. Koch, “Particles get all dressed up,” <i>Physics World</i>,
    vol. 15, no. 2, pp. 24–25, 2002, doi: <a href="https://doi.org/10.1088/2058-7058/15/2/36">10.1088/2058-7058/15/2/36</a>.'
  mla: Meier, Torsten, and S. W. Koch. “Particles Get All Dressed Up.” <i>Physics
    World</i>, vol. 15, no. 2, IOP Publishing, 2002, pp. 24–25, doi:<a href="https://doi.org/10.1088/2058-7058/15/2/36">10.1088/2058-7058/15/2/36</a>.
  short: T. Meier, S.W. Koch, Physics World 15 (2002) 24–25.
date_created: 2023-04-02T13:17:25Z
date_updated: 2023-04-02T13:17:29Z
department:
- _id: '293'
doi: 10.1088/2058-7058/15/2/36
extern: '1'
intvolume: '        15'
issue: '2'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://iopscience.iop.org/article/10.1088/2058-7058/15/2/36/pdf
oa: '1'
page: 24-25
publication: Physics World
publication_status: published
publisher: IOP Publishing
status: public
title: Particles get all dressed up
type: journal_article
user_id: '49063'
volume: 15
year: '2002'
...
---
_id: '43291'
abstract:
- lang: eng
  text: "On the basis of a tight-binding model for a strongly disordered semiconductor
    with correlated conduction- and valence-band disorder a coherent dynamical intraband
    effect is analyzed. For systems that are excited by two specially designed ultrashort
    light-pulse sequences delayed by \r\nτ\r\n relatively to each other echolike phenomena
    are predicted to occur. In addition to the interband photon echo which shows up
    at exactly t=2τ relative to the first pulse, the system responds with two spontaneous
    intraband current pulses preceding and following the appearance of the photon
    echo. The temporal splitting depends on the electron-hole mass ratio. Calculating
    the population relaxation rate due to Coulomb scattering, it is concluded that
    the predicted new dynamical effect should be experimentally observable in an interacting
    and strongly disordered system, such as the Quantum Coulomb Glass."
article_number: '085306'
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: C.
  full_name: Schlichenmaier, C.
  last_name: Schlichenmaier
- first_name: I.
  full_name: Varga, I.
  last_name: Varga
- first_name: P.
  full_name: Thomas, P.
  last_name: Thomas
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
citation:
  ama: Meier T, Schlichenmaier C, Varga I, Thomas P, Koch SW. Optically induced coherent
    intraband dynamics in disordered semiconductors. <i>Physical Review B</i>. 2002;65(8).
    doi:<a href="https://doi.org/10.1103/PhysRevB.65.085306">10.1103/PhysRevB.65.085306</a>
  apa: Meier, T., Schlichenmaier, C., Varga, I., Thomas, P., &#38; Koch, S. W. (2002).
    Optically induced coherent intraband dynamics in disordered semiconductors. <i>Physical
    Review B</i>, <i>65</i>(8), Article 085306. <a href="https://doi.org/10.1103/PhysRevB.65.085306">https://doi.org/10.1103/PhysRevB.65.085306</a>
  bibtex: '@article{Meier_Schlichenmaier_Varga_Thomas_Koch_2002, title={Optically
    induced coherent intraband dynamics in disordered semiconductors}, volume={65},
    DOI={<a href="https://doi.org/10.1103/PhysRevB.65.085306">10.1103/PhysRevB.65.085306</a>},
    number={8085306}, journal={Physical Review B}, publisher={American Physical Society},
    author={Meier, Torsten and Schlichenmaier, C. and Varga, I. and Thomas, P. and
    Koch, S.W.}, year={2002} }'
  chicago: Meier, Torsten, C. Schlichenmaier, I. Varga, P. Thomas, and S.W. Koch.
    “Optically Induced Coherent Intraband Dynamics in Disordered Semiconductors.”
    <i>Physical Review B</i> 65, no. 8 (2002). <a href="https://doi.org/10.1103/PhysRevB.65.085306">https://doi.org/10.1103/PhysRevB.65.085306</a>.
  ieee: 'T. Meier, C. Schlichenmaier, I. Varga, P. Thomas, and S. W. Koch, “Optically
    induced coherent intraband dynamics in disordered semiconductors,” <i>Physical
    Review B</i>, vol. 65, no. 8, Art. no. 085306, 2002, doi: <a href="https://doi.org/10.1103/PhysRevB.65.085306">10.1103/PhysRevB.65.085306</a>.'
  mla: Meier, Torsten, et al. “Optically Induced Coherent Intraband Dynamics in Disordered
    Semiconductors.” <i>Physical Review B</i>, vol. 65, no. 8, 085306, American Physical
    Society, 2002, doi:<a href="https://doi.org/10.1103/PhysRevB.65.085306">10.1103/PhysRevB.65.085306</a>.
  short: T. Meier, C. Schlichenmaier, I. Varga, P. Thomas, S.W. Koch, Physical Review
    B 65 (2002).
date_created: 2023-04-02T13:14:09Z
date_updated: 2023-04-02T14:19:13Z
department:
- _id: '293'
doi: 10.1103/PhysRevB.65.085306
extern: '1'
intvolume: '        65'
issue: '8'
language:
- iso: eng
main_file_link:
- url: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.65.085306
publication: Physical Review B
publication_status: published
publisher: American Physical Society
status: public
title: Optically induced coherent intraband dynamics in disordered semiconductors
type: journal_article
user_id: '49063'
volume: 65
year: '2002'
...
---
_id: '43607'
author:
- first_name: Harald
  full_name: Schroeter-Wittke, Harald
  id: '480'
  last_name: Schroeter-Wittke
- first_name: Gotthard
  full_name: Fermor, Gotthard
  last_name: Fermor
citation:
  ama: Schroeter-Wittke H, Fermor G. Crossover - Grenzverkehr. Ein Sampler zum Sound
    der Engel. Dem Andenken eines Engels - In memoriam Henning Schröer. <i>Zeitschrift
    für Pädagogik und Theologie</i>. 2002;54:283-288.
  apa: Schroeter-Wittke, H., &#38; Fermor, G. (2002). Crossover - Grenzverkehr. Ein
    Sampler zum Sound der Engel. Dem Andenken eines Engels - In memoriam Henning Schröer.
    <i>Zeitschrift Für Pädagogik Und Theologie</i>, <i>54</i>, 283–288.
  bibtex: '@article{Schroeter-Wittke_Fermor_2002, title={Crossover - Grenzverkehr.
    Ein Sampler zum Sound der Engel. Dem Andenken eines Engels - In memoriam Henning
    Schröer}, volume={54}, journal={Zeitschrift für Pädagogik und Theologie}, author={Schroeter-Wittke,
    Harald and Fermor, Gotthard}, year={2002}, pages={283–288} }'
  chicago: 'Schroeter-Wittke, Harald, and Gotthard Fermor. “Crossover - Grenzverkehr.
    Ein Sampler Zum Sound Der Engel. Dem Andenken Eines Engels - In Memoriam Henning
    Schröer.” <i>Zeitschrift Für Pädagogik Und Theologie</i> 54 (2002): 283–88.'
  ieee: H. Schroeter-Wittke and G. Fermor, “Crossover - Grenzverkehr. Ein Sampler
    zum Sound der Engel. Dem Andenken eines Engels - In memoriam Henning Schröer,”
    <i>Zeitschrift für Pädagogik und Theologie</i>, vol. 54, pp. 283–288, 2002.
  mla: Schroeter-Wittke, Harald, and Gotthard Fermor. “Crossover - Grenzverkehr. Ein
    Sampler Zum Sound Der Engel. Dem Andenken Eines Engels - In Memoriam Henning Schröer.”
    <i>Zeitschrift Für Pädagogik Und Theologie</i>, vol. 54, 2002, pp. 283–88.
  short: H. Schroeter-Wittke, G. Fermor, Zeitschrift Für Pädagogik Und Theologie 54
    (2002) 283–288.
date_created: 2023-04-15T00:11:40Z
date_updated: 2023-04-15T00:11:57Z
intvolume: '        54'
language:
- iso: eng
page: 283-288
publication: Zeitschrift für Pädagogik und Theologie
status: public
title: Crossover - Grenzverkehr. Ein Sampler zum Sound der Engel. Dem Andenken eines
  Engels - In memoriam Henning Schröer
type: journal_article
user_id: '480'
volume: 54
year: '2002'
...
---
_id: '43602'
author:
- first_name: Harald
  full_name: Schroeter-Wittke, Harald
  id: '480'
  last_name: Schroeter-Wittke
citation:
  ama: 'Schroeter-Wittke H. Praktische Theologie als Performance. Ein religionspädagogisches
    Programmheft mit 7 Programmpunkten. In: Hauschildt E, Schwab U, eds. <i>Praktische
    Theologie Für Das 21. Jahrhundert</i>. ; 2002:143-159.'
  apa: Schroeter-Wittke, H. (2002). Praktische Theologie als Performance. Ein religionspädagogisches
    Programmheft mit 7 Programmpunkten. In E. Hauschildt &#38; U. Schwab (Eds.), <i>Praktische
    Theologie für das 21. Jahrhundert</i> (pp. 143–159).
  bibtex: '@inbook{Schroeter-Wittke_2002, title={Praktische Theologie als Performance.
    Ein religionspädagogisches Programmheft mit 7 Programmpunkten}, booktitle={Praktische
    Theologie für das 21. Jahrhundert}, author={Schroeter-Wittke, Harald}, editor={Hauschildt,
    Eberhard and Schwab, Ulrich}, year={2002}, pages={143–159} }'
  chicago: Schroeter-Wittke, Harald. “Praktische Theologie Als Performance. Ein Religionspädagogisches
    Programmheft Mit 7 Programmpunkten.” In <i>Praktische Theologie Für Das 21. Jahrhundert</i>,
    edited by Eberhard Hauschildt and Ulrich Schwab, 143–59, 2002.
  ieee: H. Schroeter-Wittke, “Praktische Theologie als Performance. Ein religionspädagogisches
    Programmheft mit 7 Programmpunkten,” in <i>Praktische Theologie für das 21. Jahrhundert</i>,
    E. Hauschildt and U. Schwab, Eds. 2002, pp. 143–159.
  mla: Schroeter-Wittke, Harald. “Praktische Theologie Als Performance. Ein Religionspädagogisches
    Programmheft Mit 7 Programmpunkten.” <i>Praktische Theologie Für Das 21. Jahrhundert</i>,
    edited by Eberhard Hauschildt and Ulrich Schwab, 2002, pp. 143–59.
  short: 'H. Schroeter-Wittke, in: E. Hauschildt, U. Schwab (Eds.), Praktische Theologie
    Für Das 21. Jahrhundert, 2002, pp. 143–159.'
date_created: 2023-04-15T00:07:23Z
date_updated: 2023-04-15T00:07:36Z
editor:
- first_name: Eberhard
  full_name: Hauschildt, Eberhard
  last_name: Hauschildt
- first_name: Ulrich
  full_name: Schwab, Ulrich
  last_name: Schwab
language:
- iso: eng
page: 143-159
publication: Praktische Theologie für das 21. Jahrhundert
status: public
title: Praktische Theologie als Performance. Ein religionspädagogisches Programmheft
  mit 7 Programmpunkten
type: book_chapter
user_id: '480'
year: '2002'
...