---
_id: '42745'
author:
- first_name: Christian
  full_name: Fuchs, Christian
  id: '21863'
  last_name: Fuchs
  orcid: 0000-0003-0589-4579
citation:
  ama: Fuchs C. <i>Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic
    System. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna
    University of Technology; 2002.
  apa: Fuchs, C. (2002). <i>Modern Society – A Complex, Evolutionary, Self-Organising,
    Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>.
    Vienna University of Technology.
  bibtex: '@book{Fuchs_2002, place={Vienna}, title={Modern Society – A Complex, Evolutionary,
    Self-Organising, Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research
    Paper}, publisher={Vienna University of Technology}, author={Fuchs, Christian},
    year={2002} }'
  chicago: 'Fuchs, Christian. <i>Modern Society – A Complex, Evolutionary, Self-Organising,
    Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>.
    Vienna: Vienna University of Technology, 2002.'
  ieee: 'C. Fuchs, <i>Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic
    System. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna:
    Vienna University of Technology, 2002.'
  mla: Fuchs, Christian. <i>Modern Society – A Complex, Evolutionary, Self-Organising,
    Antagonistic System. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>.
    Vienna University of Technology, 2002.
  short: C. Fuchs, Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic
    System. INTAS-Project “Human Strategies in Complexity“-Research Paper, Vienna
    University of Technology, Vienna, 2002.
date_created: 2023-03-06T04:04:45Z
date_updated: 2023-03-08T06:41:27Z
department:
- _id: '136'
extern: '1'
language:
- iso: eng
place: Vienna
publisher: Vienna University of Technology
status: public
title: Modern Society – A Complex, Evolutionary, Self-Organising, Antagonistic System.
  INTAS-Project “Human Strategies in Complexity“-Research Paper
type: report
user_id: '49063'
year: '2002'
...
---
_id: '42743'
author:
- first_name: Christian
  full_name: Fuchs, Christian
  id: '21863'
  last_name: Fuchs
  orcid: 0000-0003-0589-4579
citation:
  ama: Fuchs C. <i>Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project
    “Human Strategies in Complexity“-Research Paper</i>. Vienna University of Technology;
    2002.
  apa: Fuchs, C. (2002). <i>Dialectical Materialism and the Self-Organisation of Matter.
    INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna University
    of Technology.
  bibtex: '@book{Fuchs_2002, place={Vienna}, title={Dialectical Materialism and the
    Self-Organisation of Matter. INTAS-Project “Human Strategies in Complexity“-Research
    Paper}, publisher={Vienna University of Technology}, author={Fuchs, Christian},
    year={2002} }'
  chicago: 'Fuchs, Christian. <i>Dialectical Materialism and the Self-Organisation
    of Matter. INTAS-Project “Human Strategies in Complexity“-Research Paper</i>.
    Vienna: Vienna University of Technology, 2002.'
  ieee: 'C. Fuchs, <i>Dialectical Materialism and the Self-Organisation of Matter.
    INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna: Vienna
    University of Technology, 2002.'
  mla: Fuchs, Christian. <i>Dialectical Materialism and the Self-Organisation of Matter.
    INTAS-Project “Human Strategies in Complexity“-Research Paper</i>. Vienna University
    of Technology, 2002.
  short: C. Fuchs, Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project
    “Human Strategies in Complexity“-Research Paper, Vienna University of Technology,
    Vienna, 2002.
date_created: 2023-03-06T04:03:03Z
date_updated: 2023-03-08T06:43:06Z
department:
- _id: '136'
extern: '1'
language:
- iso: eng
place: Vienna
publisher: Vienna University of Technology
status: public
title: Dialectical Materialism and the Self-Organisation of Matter. INTAS-Project
  “Human Strategies in Complexity“-Research Paper
type: report
user_id: '49063'
year: '2002'
...
---
_id: '42455'
author:
- first_name: Christian
  full_name: Fuchs, Christian
  id: '21863'
  last_name: Fuchs
  orcid: 0000-0003-0589-4579
citation:
  ama: 'Fuchs C. Social Information and Self-Organisation. In: Trappl R, ed. <i>Cybernetics
    and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and
    Systems Research</i>. Austrian Society for Cybernetic Studies; 2002:225-230.'
  apa: Fuchs, C. (2002). Social Information and Self-Organisation. In R. Trappl (Ed.),
    <i>Cybernetics and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics
    and Systems Research</i> (pp. 225–230). Austrian Society for Cybernetic Studies.
  bibtex: '@inproceedings{Fuchs_2002, place={Vienna}, title={Social Information and
    Self-Organisation}, booktitle={Cybernetics and Systems 2002. Proceedings of the
    16th European Meeting on Cybernetics and Systems Research}, publisher={Austrian
    Society for Cybernetic Studies}, author={Fuchs, Christian}, editor={Trappl, Robert},
    year={2002}, pages={225–230} }'
  chicago: 'Fuchs, Christian. “Social Information and Self-Organisation.” In <i>Cybernetics
    and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and
    Systems Research</i>, edited by Robert Trappl, 225–30. Vienna: Austrian Society
    for Cybernetic Studies, 2002.'
  ieee: C. Fuchs, “Social Information and Self-Organisation,” in <i>Cybernetics and
    Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and Systems
    Research</i>, 2002, pp. 225–230.
  mla: Fuchs, Christian. “Social Information and Self-Organisation.” <i>Cybernetics
    and Systems 2002. Proceedings of the 16th European Meeting on Cybernetics and
    Systems Research</i>, edited by Robert Trappl, Austrian Society for Cybernetic
    Studies, 2002, pp. 225–30.
  short: 'C. Fuchs, in: R. Trappl (Ed.), Cybernetics and Systems 2002. Proceedings
    of the 16th European Meeting on Cybernetics and Systems Research, Austrian Society
    for Cybernetic Studies, Vienna, 2002, pp. 225–230.'
date_created: 2023-02-24T04:06:02Z
date_updated: 2023-03-08T07:09:41Z
department:
- _id: '136'
editor:
- first_name: Robert
  full_name: Trappl, Robert
  last_name: Trappl
extern: '1'
language:
- iso: eng
page: 225-230
place: Vienna
publication: Cybernetics and Systems 2002. Proceedings of the 16th European Meeting
  on Cybernetics and Systems Research
publisher: Austrian Society for Cybernetic Studies
status: public
title: Social Information and Self-Organisation
type: conference
user_id: '49063'
year: '2002'
...
---
_id: '25998'
abstract:
- lang: eng
  text: The formation of mesoscopically ordered silica/surfactant composites under
    acidic synthesis conditions is studied by time-resolved in-situ small-angle X-ray
    scattering (SAXS) using synchrotron radiation. Benzene is used a an additive which
    acts as a weak swelling agent although most of the benzene molecules are found
    to reside near the surfactant/silicate interface region rather than in the micelle
    cores. With increasing relative amounts of benzene, the curvature of the micellar
    aggregates decreases, which finally leads to a transition from (hexagonally) rodlike
    to lamellar; a mechanism for this change in curvature is suggested.
article_type: original
author:
- first_name: Michael
  full_name: Tiemann, Michael
  id: '23547'
  last_name: Tiemann
  orcid: 0000-0003-1711-2722
- first_name: Valérie
  full_name: Goletto, Valérie
  last_name: Goletto
- first_name: Raphaël
  full_name: Blum, Raphaël
  last_name: Blum
- first_name: Florence
  full_name: Babonneau, Florence
  last_name: Babonneau
- first_name: Heinz
  full_name: Amenitsch, Heinz
  last_name: Amenitsch
- first_name: Mika
  full_name: Lindén, Mika
  last_name: Lindén
citation:
  ama: Tiemann M, Goletto V, Blum R, Babonneau F, Amenitsch H, Lindén M. In-Situ SAXS
    Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized Benzene
    under Acidic Conditions. <i>Langmuir</i>. Published online 2002:10053-10057. doi:<a
    href="https://doi.org/10.1021/la026473w">10.1021/la026473w</a>
  apa: Tiemann, M., Goletto, V., Blum, R., Babonneau, F., Amenitsch, H., &#38; Lindén,
    M. (2002). In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases
    with Solubilized Benzene under Acidic Conditions. <i>Langmuir</i>, 10053–10057.
    <a href="https://doi.org/10.1021/la026473w">https://doi.org/10.1021/la026473w</a>
  bibtex: '@article{Tiemann_Goletto_Blum_Babonneau_Amenitsch_Lindén_2002, title={In-Situ
    SAXS Studies on the Formation of Silicate/Surfactant Mesophases with Solubilized
    Benzene under Acidic Conditions}, DOI={<a href="https://doi.org/10.1021/la026473w">10.1021/la026473w</a>},
    journal={Langmuir}, author={Tiemann, Michael and Goletto, Valérie and Blum, Raphaël
    and Babonneau, Florence and Amenitsch, Heinz and Lindén, Mika}, year={2002}, pages={10053–10057}
    }'
  chicago: Tiemann, Michael, Valérie Goletto, Raphaël Blum, Florence Babonneau, Heinz
    Amenitsch, and Mika Lindén. “In-Situ SAXS Studies on the Formation of Silicate/Surfactant
    Mesophases with Solubilized Benzene under Acidic Conditions.” <i>Langmuir</i>,
    2002, 10053–57. <a href="https://doi.org/10.1021/la026473w">https://doi.org/10.1021/la026473w</a>.
  ieee: 'M. Tiemann, V. Goletto, R. Blum, F. Babonneau, H. Amenitsch, and M. Lindén,
    “In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with
    Solubilized Benzene under Acidic Conditions,” <i>Langmuir</i>, pp. 10053–10057,
    2002, doi: <a href="https://doi.org/10.1021/la026473w">10.1021/la026473w</a>.'
  mla: Tiemann, Michael, et al. “In-Situ SAXS Studies on the Formation of Silicate/Surfactant
    Mesophases with Solubilized Benzene under Acidic Conditions.” <i>Langmuir</i>,
    2002, pp. 10053–57, doi:<a href="https://doi.org/10.1021/la026473w">10.1021/la026473w</a>.
  short: M. Tiemann, V. Goletto, R. Blum, F. Babonneau, H. Amenitsch, M. Lindén, Langmuir
    (2002) 10053–10057.
date_created: 2021-10-09T09:50:51Z
date_updated: 2023-03-09T09:02:25Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1021/la026473w
extern: '1'
language:
- iso: eng
page: 10053-10057
publication: Langmuir
publication_identifier:
  issn:
  - 0743-7463
  - 1520-5827
publication_status: published
quality_controlled: '1'
status: public
title: In-Situ SAXS Studies on the Formation of Silicate/Surfactant Mesophases with
  Solubilized Benzene under Acidic Conditions
type: journal_article
user_id: '23547'
year: '2002'
...
---
_id: '26001'
abstract:
- lang: eng
  text: Mesoporous aluminophosphates with a strict ratio of Al∶P = 1∶1 have been synthesised
    from a single-source molecular precursor.
article_type: original
author:
- first_name: Michael
  full_name: Tiemann, Michael
  id: '23547'
  last_name: Tiemann
  orcid: 0000-0003-1711-2722
- first_name: Michael
  full_name: Fröba, Michael
  last_name: Fröba
citation:
  ama: Tiemann M, Fröba M. Mesoporous aluminophosphates from a single-source precursor.
    <i>Chemical Communications</i>. Published online 2002:406-407. doi:<a href="https://doi.org/10.1039/b110662g">10.1039/b110662g</a>
  apa: Tiemann, M., &#38; Fröba, M. (2002). Mesoporous aluminophosphates from a single-source
    precursor. <i>Chemical Communications</i>, 406–407. <a href="https://doi.org/10.1039/b110662g">https://doi.org/10.1039/b110662g</a>
  bibtex: '@article{Tiemann_Fröba_2002, title={Mesoporous aluminophosphates from a
    single-source precursor}, DOI={<a href="https://doi.org/10.1039/b110662g">10.1039/b110662g</a>},
    journal={Chemical Communications}, author={Tiemann, Michael and Fröba, Michael},
    year={2002}, pages={406–407} }'
  chicago: Tiemann, Michael, and Michael Fröba. “Mesoporous Aluminophosphates from
    a Single-Source Precursor.” <i>Chemical Communications</i>, 2002, 406–7. <a href="https://doi.org/10.1039/b110662g">https://doi.org/10.1039/b110662g</a>.
  ieee: 'M. Tiemann and M. Fröba, “Mesoporous aluminophosphates from a single-source
    precursor,” <i>Chemical Communications</i>, pp. 406–407, 2002, doi: <a href="https://doi.org/10.1039/b110662g">10.1039/b110662g</a>.'
  mla: Tiemann, Michael, and Michael Fröba. “Mesoporous Aluminophosphates from a Single-Source
    Precursor.” <i>Chemical Communications</i>, 2002, pp. 406–07, doi:<a href="https://doi.org/10.1039/b110662g">10.1039/b110662g</a>.
  short: M. Tiemann, M. Fröba, Chemical Communications (2002) 406–407.
date_created: 2021-10-09T10:04:05Z
date_updated: 2023-03-09T09:03:25Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1039/b110662g
extern: '1'
language:
- iso: eng
page: 406-407
publication: Chemical Communications
publication_identifier:
  issn:
  - 1359-7345
  - 1364-548X
publication_status: published
quality_controlled: '1'
status: public
title: Mesoporous aluminophosphates from a single-source precursor
type: journal_article
user_id: '23547'
year: '2002'
...
---
_id: '26000'
abstract:
- lang: eng
  text: Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water...
article_type: original
author:
- first_name: Sune
  full_name: Backlund, Sune
  last_name: Backlund
- first_name: Rauno
  full_name: Friman, Rauno
  last_name: Friman
- first_name: Stefan
  full_name: Karlsson, Stefan
  last_name: Karlsson
- first_name: Michael
  full_name: Tiemann, Michael
  id: '23547'
  last_name: Tiemann
  orcid: 0000-0003-1711-2722
citation:
  ama: Backlund S, Friman R, Karlsson S, Tiemann M. Phase Behaviour of the System
    Triethanolamine-Decanoic Acid-Water. <i>Tenside Surfactants Detergents</i>. 2002;39(5):136-140.
  apa: Backlund, S., Friman, R., Karlsson, S., &#38; Tiemann, M. (2002). Phase Behaviour
    of the System Triethanolamine-Decanoic Acid-Water. <i>Tenside Surfactants Detergents</i>,
    <i>39</i>(5), 136–140.
  bibtex: '@article{Backlund_Friman_Karlsson_Tiemann_2002, title={Phase Behaviour
    of the System Triethanolamine-Decanoic Acid-Water}, volume={39}, number={5}, journal={Tenside
    Surfactants Detergents}, author={Backlund, Sune and Friman, Rauno and Karlsson,
    Stefan and Tiemann, Michael}, year={2002}, pages={136–140} }'
  chicago: 'Backlund, Sune, Rauno Friman, Stefan Karlsson, and Michael Tiemann. “Phase
    Behaviour of the System Triethanolamine-Decanoic Acid-Water.” <i>Tenside Surfactants
    Detergents</i> 39, no. 5 (2002): 136–40.'
  ieee: S. Backlund, R. Friman, S. Karlsson, and M. Tiemann, “Phase Behaviour of the
    System Triethanolamine-Decanoic Acid-Water,” <i>Tenside Surfactants Detergents</i>,
    vol. 39, no. 5, pp. 136–140, 2002.
  mla: Backlund, Sune, et al. “Phase Behaviour of the System Triethanolamine-Decanoic
    Acid-Water.” <i>Tenside Surfactants Detergents</i>, vol. 39, no. 5, 2002, pp.
    136–40.
  short: S. Backlund, R. Friman, S. Karlsson, M. Tiemann, Tenside Surfactants Detergents
    39 (2002) 136–140.
date_created: 2021-10-09T10:03:07Z
date_updated: 2023-03-09T09:05:27Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
extern: '1'
intvolume: '        39'
issue: '5'
language:
- iso: eng
page: 136-140
publication: Tenside Surfactants Detergents
quality_controlled: '1'
status: public
title: Phase Behaviour of the System Triethanolamine-Decanoic Acid-Water
type: journal_article
user_id: '23547'
volume: 39
year: '2002'
...
---
_id: '39920'
author:
- first_name: A.
  full_name: Soennecken, A.
  last_name: Soennecken
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Soennecken A, Hilleringmann U, Goser K. Floating gate structures as nonvolatile
    analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica. <i>Microelectronic
    Engineering</i>. 2002;15(1-4):633-636. doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>
  apa: Soennecken, A., Hilleringmann, U., &#38; Goser, K. (2002). Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica.
    <i>Microelectronic Engineering</i>, <i>15</i>(1–4), 633–636. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>
  bibtex: '@article{Soennecken_Hilleringmann_Goser_2002, title={Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica},
    volume={15}, DOI={<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Soennecken, A. and Hilleringmann, Ulrich and Goser, K.}, year={2002},
    pages={633–636} }'
  chicago: 'Soennecken, A., Ulrich Hilleringmann, and K. Goser. “Floating Gate Structures
    as Nonvolatile Analog Memory Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.”
    <i>Microelectronic Engineering</i> 15, no. 1–4 (2002): 633–36. <a href="https://doi.org/10.1016/0167-9317(91)90299-s">https://doi.org/10.1016/0167-9317(91)90299-s</a>.'
  ieee: 'A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures
    as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica,”
    <i>Microelectronic Engineering</i>, vol. 15, no. 1–4, pp. 633–636, 2002, doi:
    <a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.'
  mla: Soennecken, A., et al. “Floating Gate Structures as Nonvolatile Analog Memory
    Cells in 1.0μm-LOCOS-CMOS Technology with PZT Dielectrica.” <i>Microelectronic
    Engineering</i>, vol. 15, no. 1–4, Elsevier BV, 2002, pp. 633–36, doi:<a href="https://doi.org/10.1016/0167-9317(91)90299-s">10.1016/0167-9317(91)90299-s</a>.
  short: A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering 15
    (2002) 633–636.
date_created: 2023-01-25T09:29:53Z
date_updated: 2023-03-21T09:47:17Z
department:
- _id: '59'
doi: 10.1016/0167-9317(91)90299-s
intvolume: '        15'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 633-636
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS
  technology with PZT dielectrica
type: journal_article
user_id: '20179'
volume: 15
year: '2002'
...
---
_id: '39915'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Hilleringmann U, Goser K. Results of monolithic integration of optical waveguides,
    photodiodes and CMOS circuits on silicon. <i>Microelectronic Engineering</i>.
    2002;19(1-4):211-214. doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>
  apa: Hilleringmann, U., &#38; Goser, K. (2002). Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon. <i>Microelectronic
    Engineering</i>, <i>19</i>(1–4), 211–214. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>
  bibtex: '@article{Hilleringmann_Goser_2002, title={Results of monolithic integration
    of optical waveguides, photodiodes and CMOS circuits on silicon}, volume={19},
    DOI={<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={211–214} }'
  chicago: 'Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration
    of Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i> 19, no. 1–4 (2002): 211–14. <a href="https://doi.org/10.1016/0167-9317(92)90425-q">https://doi.org/10.1016/0167-9317(92)90425-q</a>.'
  ieee: 'U. Hilleringmann and K. Goser, “Results of monolithic integration of optical
    waveguides, photodiodes and CMOS circuits on silicon,” <i>Microelectronic Engineering</i>,
    vol. 19, no. 1–4, pp. 211–214, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.'
  mla: Hilleringmann, Ulrich, and K. Goser. “Results of Monolithic Integration of
    Optical Waveguides, Photodiodes and CMOS Circuits on Silicon.” <i>Microelectronic
    Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 211–14, doi:<a href="https://doi.org/10.1016/0167-9317(92)90425-q">10.1016/0167-9317(92)90425-q</a>.
  short: U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002) 211–214.
date_created: 2023-01-25T09:27:51Z
date_updated: 2023-03-21T09:49:09Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90425-q
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 211-214
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: Results of monolithic integration of optical waveguides, photodiodes and CMOS
  circuits on silicon
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39916'
author:
- first_name: S.
  full_name: Adams, S.
  last_name: Adams
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching
    techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>
  apa: Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining
    by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4),
    191–194. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>
  bibtex: '@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining
    by dry silicon-etching techniques}, volume={19}, DOI={<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194}
    }'
  chicago: 'Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining
    by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no.
    1–4 (2002): 191–94. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>.'
  ieee: 'S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining
    by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19,
    no. 1–4, pp. 191–194, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.'
  mla: Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”
    <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94,
    doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.
  short: S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002)
    191–194.
date_created: 2023-01-25T09:28:16Z
date_updated: 2023-03-21T09:48:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90420-v
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 191-194
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: CMOS compatible micromachining by dry silicon-etching techniques
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39348'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-24T09:23:56Z
date_updated: 2023-03-21T09:45:40Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39923'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
citation:
  ama: 'Goser K, Hilleringmann U, Rueckert U. Applications and implementations of
    neural networks in microelectronics-overview and status. In: <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput.
    Soc. Press; 2002. doi:<a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>'
  apa: Goser, K., Hilleringmann, U., &#38; Rueckert, U. (2002). Applications and implementations
    of neural networks in microelectronics-overview and status. <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. <a href="https://doi.org/10.1109/cmpeur.1991.257442">https://doi.org/10.1109/cmpeur.1991.257442</a>
  bibtex: '@inproceedings{Goser_Hilleringmann_Rueckert_2002, title={Applications and
    implementations of neural networks in microelectronics-overview and status}, DOI={<a
    href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>},
    booktitle={[1991] Proceedings, Advanced Computer Technology, Reliable Systems
    and Applications}, publisher={IEEE Comput. Soc. Press}, author={Goser, K. and
    Hilleringmann, Ulrich and Rueckert, U.}, year={2002} }'
  chicago: Goser, K., Ulrich Hilleringmann, and U. Rueckert. “Applications and Implementations
    of Neural Networks in Microelectronics-Overview and Status.” In <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput.
    Soc. Press, 2002. <a href="https://doi.org/10.1109/cmpeur.1991.257442">https://doi.org/10.1109/cmpeur.1991.257442</a>.
  ieee: 'K. Goser, U. Hilleringmann, and U. Rueckert, “Applications and implementations
    of neural networks in microelectronics-overview and status,” 2002, doi: <a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>.'
  mla: Goser, K., et al. “Applications and Implementations of Neural Networks in Microelectronics-Overview
    and Status.” <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems
    and Applications</i>, IEEE Comput. Soc. Press, 2002, doi:<a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>.
  short: 'K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced
    Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press,
    2002.'
date_created: 2023-01-25T09:31:42Z
date_updated: 2023-03-21T09:46:40Z
department:
- _id: '59'
doi: 10.1109/cmpeur.1991.257442
language:
- iso: eng
publication: '[1991] Proceedings, Advanced Computer Technology, Reliable Systems and
  Applications'
publication_status: published
publisher: IEEE Comput. Soc. Press
status: public
title: Applications and implementations of neural networks in microelectronics-overview
  and status
type: conference
user_id: '20179'
year: '2002'
...
---
_id: '39889'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light
    triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417.
    doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current
    cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>,
    <i>46</i>(1–4), 413–417. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current
    cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={413–417} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current
    Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>
    46, no. 1–4 (2002): 413–17. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded
    light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>,
    vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.'
  mla: Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on
    One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier
    BV, 2002, pp. 413–17, doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    46 (2002) 413–417.
date_created: 2023-01-25T09:13:17Z
date_updated: 2023-03-21T09:58:35Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(99)00122-7
intvolume: '        46'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 413-417
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 12 kV low current cascaded light triggered switch on one silicon chip
type: journal_article
user_id: '20179'
volume: 46
year: '2002'
...
---
_id: '39891'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-25T09:14:43Z
date_updated: 2023-03-21T09:58:01Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39886'
author:
- first_name: G
  full_name: Wirth, G
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: J.T
  full_name: Horstmann, J.T
  last_name: Horstmann
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena
    in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250.
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>
  apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic
    transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>,
    <i>43</i>(7), 1245–1250. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>
  bibtex: '@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport
    phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>},
    number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth,
    G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250}
    }'
  chicago: 'Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic
    Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>
    43, no. 7 (2002): 1245–50. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.'
  ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport
    phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol.
    43, no. 7, pp. 1245–1250, 2002, doi: <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.'
  mla: Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.”
    <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50,
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.
  short: G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics
    43 (2002) 1245–1250.
date_created: 2023-01-25T09:11:50Z
date_updated: 2023-03-21T09:59:22Z
department:
- _id: '59'
doi: 10.1016/s0038-1101(99)00060-x
intvolume: '        43'
issue: '7'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 1245-1250
publication: Solid-State Electronics
publication_identifier:
  issn:
  - 0038-1101
publication_status: published
publisher: Elsevier BV
status: public
title: Mesoscopic transport phenomena in ultrashort channel MOSFETs
type: journal_article
user_id: '20179'
volume: 43
year: '2002'
...
---
_id: '39876'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.J.
  full_name: Horstmann, T.J.
  last_name: Horstmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum
    feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond
    and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>
  apa: Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002).
    Structures with a minimum feature size of less than 100 nm in CVD-diamond for
    sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514.
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>
  bibtex: '@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications},
    volume={10}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>},
    number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser,
    K.}, year={2002}, pages={511–514} }'
  chicago: 'Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures
    with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.”
    <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>.'
  ieee: 'R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,”
    <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi:
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.'
  mla: Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than
    100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>,
    vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.
  short: R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related
    Materials 10 (2002) 511–514.
date_created: 2023-01-25T09:07:37Z
date_updated: 2023-03-21T10:03:16Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00373-9
intvolume: '        10'
issue: 3-7
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 511-514
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Structures with a minimum feature size of less than 100 nm in CVD-diamond for
  sensor applications
type: journal_article
user_id: '20179'
volume: 10
year: '2002'
...
---
_id: '39877'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.
  full_name: Vieregge, T.
  last_name: Vieregge
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
citation:
  ama: Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique
    for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>.
    2002;53(1-4):569-572. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>
  apa: Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure
    definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic
    Engineering</i>, <i>53</i>(1–4), 569–572. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>
  bibtex: '@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition
    technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a
    href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002},
    pages={569–572} }'
  chicago: 'Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition
    Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic
    Engineering</i> 53, no. 1–4 (2002): 569–72. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.'
  ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition
    technique for 25 nm lines of silicon and related materials,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines
    of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53,
    no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.
  short: U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering
    53 (2002) 569–572.
date_created: 2023-01-25T09:08:13Z
date_updated: 2023-03-21T10:03:00Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00380-4
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 569-572
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A structure definition technique for 25 nm lines of silicon and related materials
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39874'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive
    pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844.
    doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>
  apa: Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6),
    841–844. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>
  bibtex: '@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors}, volume={11}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>},
    number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844}
    }'
  chicago: 'Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11,
    no. 3–6 (2002): 841–44. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.'
  ieee: 'R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for
    piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11,
    no. 3–6, pp. 841–844, 2002, doi: <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.'
  mla: Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol.
    11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.
  short: R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.
date_created: 2023-01-25T09:05:52Z
date_updated: 2023-03-21T10:03:48Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00703-8
intvolume: '        11'
issue: 3-6
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 841-844
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
type: journal_article
user_id: '20179'
volume: 11
year: '2002'
...
---
_id: '39875'
abstract:
- lang: eng
  text: Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten
    der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten
    eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen
    zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als
    Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen
    von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben
    dienen.
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Hilleringmann U. Metallisierung und Kontakte. In: <i>Silizium-Halbleitertechnologie</i>.
    Vieweg+Teubner Verlag; 2002:131–151. doi:<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>'
  apa: Hilleringmann, U. (2002). Metallisierung und Kontakte. In <i>Silizium-Halbleitertechnologie</i>
    (pp. 131–151). Vieweg+Teubner Verlag. <a href="https://doi.org/10.1007/978-3-322-94119-0_8">https://doi.org/10.1007/978-3-322-94119-0_8</a>
  bibtex: '@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und
    Kontakte}, DOI={<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>},
    booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag},
    author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }'
  chicago: 'Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” In <i>Silizium-Halbleitertechnologie</i>,
    131–151. Wiesbaden: Vieweg+Teubner Verlag, 2002. <a href="https://doi.org/10.1007/978-3-322-94119-0_8">https://doi.org/10.1007/978-3-322-94119-0_8</a>.'
  ieee: 'U. Hilleringmann, “Metallisierung und Kontakte,” in <i>Silizium-Halbleitertechnologie</i>,
    Wiesbaden: Vieweg+Teubner Verlag, 2002, pp. 131–151.'
  mla: Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>,
    Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>.
  short: 'U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag,
    Wiesbaden, 2002, pp. 131–151.'
date_created: 2023-01-25T09:06:58Z
date_updated: 2023-03-21T10:03:35Z
department:
- _id: '59'
doi: 10.1007/978-3-322-94119-0_8
language:
- iso: eng
page: 131–151
place: Wiesbaden
publication: Silizium-Halbleitertechnologie
publication_identifier:
  isbn:
  - 978-3-322-94119-0
publisher: Vieweg+Teubner Verlag
status: public
title: Metallisierung und Kontakte
type: book_chapter
user_id: '20179'
year: '2002'
...
---
_id: '43297'
abstract:
- lang: eng
  text: A microscopic many-body theory describing the optical and electronic properties
    of semiconductors and semiconductor nanostructures is briefly reviewed. At the
    semiclassical level, the optical response is computed using Maxwell's equations
    together with the semiconductor Bloch equations which describe the dynamics of
    the diagonal and the off-diagonal terms of the reduced single-particle density
    matrix. These equations include the coupling between the semiconductor and the
    optical field as well as Coulomb many-body interactions among the optically excited
    carriers. Under quasi-equilibrium conditions, luminescence spectra can be obtained
    from absorption spectra on the basis of the Kubo–Martin–Schwinger relation for
    conditions usually limited to the regime of optical gain (lasers). More generally,
    light emission has to be computed at a fully quantum mechanical level leading
    to semiconductor luminescence equations.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
- first_name: W.
  full_name: Hoyer, W.
  last_name: Hoyer
- first_name: M.
  full_name: Kira, M.
  last_name: Kira
citation:
  ama: 'Meier T, Koch SW, Hoyer W, Kira M. Theory of the optical properties of semiconductor
    nanostructures. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>.
    2002;14(1-2):45-52. doi:<a href="https://doi.org/10.1016/S1386-9477(02)00358-2">10.1016/S1386-9477(02)00358-2</a>'
  apa: 'Meier, T., Koch, S. W., Hoyer, W., &#38; Kira, M. (2002). Theory of the optical
    properties of semiconductor nanostructures. <i>Physica E: Low-Dimensional Systems
    and Nanostructures</i>, <i>14</i>(1–2), 45–52. <a href="https://doi.org/10.1016/S1386-9477(02)00358-2">https://doi.org/10.1016/S1386-9477(02)00358-2</a>'
  bibtex: '@article{Meier_Koch_Hoyer_Kira_2002, title={Theory of the optical properties
    of semiconductor nanostructures}, volume={14}, DOI={<a href="https://doi.org/10.1016/S1386-9477(02)00358-2">10.1016/S1386-9477(02)00358-2</a>},
    number={1–2}, journal={Physica E: Low-Dimensional Systems and Nanostructures},
    publisher={North-Holland}, author={Meier, Torsten and Koch, S.W. and Hoyer, W.
    and Kira, M.}, year={2002}, pages={45–52} }'
  chicago: 'Meier, Torsten, S.W. Koch, W. Hoyer, and M. Kira. “Theory of the Optical
    Properties of Semiconductor Nanostructures.” <i>Physica E: Low-Dimensional Systems
    and Nanostructures</i> 14, no. 1–2 (2002): 45–52. <a href="https://doi.org/10.1016/S1386-9477(02)00358-2">https://doi.org/10.1016/S1386-9477(02)00358-2</a>.'
  ieee: 'T. Meier, S. W. Koch, W. Hoyer, and M. Kira, “Theory of the optical properties
    of semiconductor nanostructures,” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>,
    vol. 14, no. 1–2, pp. 45–52, 2002, doi: <a href="https://doi.org/10.1016/S1386-9477(02)00358-2">10.1016/S1386-9477(02)00358-2</a>.'
  mla: 'Meier, Torsten, et al. “Theory of the Optical Properties of Semiconductor
    Nanostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>,
    vol. 14, no. 1–2, North-Holland, 2002, pp. 45–52, doi:<a href="https://doi.org/10.1016/S1386-9477(02)00358-2">10.1016/S1386-9477(02)00358-2</a>.'
  short: 'T. Meier, S.W. Koch, W. Hoyer, M. Kira, Physica E: Low-Dimensional Systems
    and Nanostructures 14 (2002) 45–52.'
date_created: 2023-04-02T13:31:23Z
date_updated: 2023-04-02T13:31:25Z
department:
- _id: '293'
doi: 10.1016/S1386-9477(02)00358-2
extern: '1'
intvolume: '        14'
issue: 1-2
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://www.sciencedirect.com/science/article/abs/pii/S1386947702003582
oa: '1'
page: 45-52
publication: 'Physica E: Low-Dimensional Systems and Nanostructures'
publication_status: published
publisher: North-Holland
status: public
title: Theory of the optical properties of semiconductor nanostructures
type: journal_article
user_id: '49063'
volume: 14
year: '2002'
...
---
_id: '43296'
abstract:
- lang: eng
  text: A three-beam configuration is used to investigate the spectrally resolved
    wave-mixing signal of a ZnSe single quantum well. The spectrum recorded in direction
    2 k2–k1 shows coherent oscillations induced by a delayed third pulse with direction
    k3. Intensity and polarization-dependent measurements indicate that the signal
    is generated by a combination of four- and six-wave mixing. The origin of the
    oscillations can be explained qualitatively by a two-level model. The polarization-dependent
    experimental results require the treatment of many-body correlations and are well
    explained by microscopic calculations including four-particle correlations up
    to fifth order in the fields.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: H.P.
  full_name: Wagner, H.P.
  last_name: Wagner
- first_name: H.-P.
  full_name: Tranitz, H.-P.
  last_name: Tranitz
- first_name: Matthias
  full_name: Reichelt, Matthias
  id: '138'
  last_name: Reichelt
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
citation:
  ama: Meier T, Wagner HP, Tranitz H-P, Reichelt M, Koch SW. Coherent Oscillations
    in Multiwave Mixing Due to Higher‐Order Coulomb Correlations. <i>physica status
    solidi (a)</i>. 2002;190(3):843-847. doi:<a href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>
  apa: Meier, T., Wagner, H. P., Tranitz, H.-P., Reichelt, M., &#38; Koch, S. W. (2002).
    Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations.
    <i>Physica Status Solidi (a)</i>, <i>190</i>(3), 843–847. <a href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>
  bibtex: '@article{Meier_Wagner_Tranitz_Reichelt_Koch_2002, title={Coherent Oscillations
    in Multiwave Mixing Due to Higher‐Order Coulomb Correlations}, volume={190}, DOI={<a
    href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>},
    number={3}, journal={physica status solidi (a)}, publisher={WILEY‐VCH Verlag Berlin
    GmbH}, author={Meier, Torsten and Wagner, H.P. and Tranitz, H.-P. and Reichelt,
    Matthias and Koch, S.W.}, year={2002}, pages={843–847} }'
  chicago: 'Meier, Torsten, H.P. Wagner, H.-P. Tranitz, Matthias Reichelt, and S.W.
    Koch. “Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations.”
    <i>Physica Status Solidi (a)</i> 190, no. 3 (2002): 843–47. <a href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.'
  ieee: 'T. Meier, H. P. Wagner, H.-P. Tranitz, M. Reichelt, and S. W. Koch, “Coherent
    Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations,” <i>physica
    status solidi (a)</i>, vol. 190, no. 3, pp. 843–847, 2002, doi: <a href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.'
  mla: Meier, Torsten, et al. “Coherent Oscillations in Multiwave Mixing Due to Higher‐Order
    Coulomb Correlations.” <i>Physica Status Solidi (a)</i>, vol. 190, no. 3, WILEY‐VCH
    Verlag Berlin GmbH, 2002, pp. 843–47, doi:<a href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.
  short: T. Meier, H.P. Wagner, H.-P. Tranitz, M. Reichelt, S.W. Koch, Physica Status
    Solidi (a) 190 (2002) 843–847.
date_created: 2023-04-02T13:28:56Z
date_updated: 2023-04-02T13:28:58Z
department:
- _id: '293'
doi: 10.1002/1521-396X(200204)190:3<843::AID-PSSA843>3.0.CO;2-B
extern: '1'
intvolume: '       190'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://onlinelibrary.wiley.com/doi/abs/10.1002/1521-396X(200204)190:3%3C843::AID-PSSA843%3E3.0.CO;2-B
page: 843-847
publication: physica status solidi (a)
publication_status: published
publisher: WILEY‐VCH Verlag Berlin GmbH
status: public
title: Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations
type: journal_article
user_id: '49063'
volume: 190
year: '2002'
...