---
_id: '39916'
author:
- first_name: S.
  full_name: Adams, S.
  last_name: Adams
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Adams S, Hilleringmann U, Goser K. CMOS compatible micromachining by dry silicon-etching
    techniques. <i>Microelectronic Engineering</i>. 2002;19(1-4):191-194. doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>
  apa: Adams, S., Hilleringmann, U., &#38; Goser, K. (2002). CMOS compatible micromachining
    by dry silicon-etching techniques. <i>Microelectronic Engineering</i>, <i>19</i>(1–4),
    191–194. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>
  bibtex: '@article{Adams_Hilleringmann_Goser_2002, title={CMOS compatible micromachining
    by dry silicon-etching techniques}, volume={19}, DOI={<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Adams, S. and Hilleringmann, Ulrich and Goser, K.}, year={2002}, pages={191–194}
    }'
  chicago: 'Adams, S., Ulrich Hilleringmann, and K. Goser. “CMOS Compatible Micromachining
    by Dry Silicon-Etching Techniques.” <i>Microelectronic Engineering</i> 19, no.
    1–4 (2002): 191–94. <a href="https://doi.org/10.1016/0167-9317(92)90420-v">https://doi.org/10.1016/0167-9317(92)90420-v</a>.'
  ieee: 'S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining
    by dry silicon-etching techniques,” <i>Microelectronic Engineering</i>, vol. 19,
    no. 1–4, pp. 191–194, 2002, doi: <a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.'
  mla: Adams, S., et al. “CMOS Compatible Micromachining by Dry Silicon-Etching Techniques.”
    <i>Microelectronic Engineering</i>, vol. 19, no. 1–4, Elsevier BV, 2002, pp. 191–94,
    doi:<a href="https://doi.org/10.1016/0167-9317(92)90420-v">10.1016/0167-9317(92)90420-v</a>.
  short: S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering 19 (2002)
    191–194.
date_created: 2023-01-25T09:28:16Z
date_updated: 2023-03-21T09:48:55Z
department:
- _id: '59'
doi: 10.1016/0167-9317(92)90420-v
intvolume: '        19'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 191-194
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: CMOS compatible micromachining by dry silicon-etching techniques
type: journal_article
user_id: '20179'
volume: 19
year: '2002'
...
---
_id: '39348'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-24T09:23:56Z
date_updated: 2023-03-21T09:45:40Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39923'
author:
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: U.
  full_name: Rueckert, U.
  last_name: Rueckert
citation:
  ama: 'Goser K, Hilleringmann U, Rueckert U. Applications and implementations of
    neural networks in microelectronics-overview and status. In: <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput.
    Soc. Press; 2002. doi:<a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>'
  apa: Goser, K., Hilleringmann, U., &#38; Rueckert, U. (2002). Applications and implementations
    of neural networks in microelectronics-overview and status. <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. <a href="https://doi.org/10.1109/cmpeur.1991.257442">https://doi.org/10.1109/cmpeur.1991.257442</a>
  bibtex: '@inproceedings{Goser_Hilleringmann_Rueckert_2002, title={Applications and
    implementations of neural networks in microelectronics-overview and status}, DOI={<a
    href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>},
    booktitle={[1991] Proceedings, Advanced Computer Technology, Reliable Systems
    and Applications}, publisher={IEEE Comput. Soc. Press}, author={Goser, K. and
    Hilleringmann, Ulrich and Rueckert, U.}, year={2002} }'
  chicago: Goser, K., Ulrich Hilleringmann, and U. Rueckert. “Applications and Implementations
    of Neural Networks in Microelectronics-Overview and Status.” In <i>[1991] Proceedings,
    Advanced Computer Technology, Reliable Systems and Applications</i>. IEEE Comput.
    Soc. Press, 2002. <a href="https://doi.org/10.1109/cmpeur.1991.257442">https://doi.org/10.1109/cmpeur.1991.257442</a>.
  ieee: 'K. Goser, U. Hilleringmann, and U. Rueckert, “Applications and implementations
    of neural networks in microelectronics-overview and status,” 2002, doi: <a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>.'
  mla: Goser, K., et al. “Applications and Implementations of Neural Networks in Microelectronics-Overview
    and Status.” <i>[1991] Proceedings, Advanced Computer Technology, Reliable Systems
    and Applications</i>, IEEE Comput. Soc. Press, 2002, doi:<a href="https://doi.org/10.1109/cmpeur.1991.257442">10.1109/cmpeur.1991.257442</a>.
  short: 'K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced
    Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press,
    2002.'
date_created: 2023-01-25T09:31:42Z
date_updated: 2023-03-21T09:46:40Z
department:
- _id: '59'
doi: 10.1109/cmpeur.1991.257442
language:
- iso: eng
publication: '[1991] Proceedings, Advanced Computer Technology, Reliable Systems and
  Applications'
publication_status: published
publisher: IEEE Comput. Soc. Press
status: public
title: Applications and implementations of neural networks in microelectronics-overview
  and status
type: conference
user_id: '20179'
year: '2002'
...
---
_id: '39889'
author:
- first_name: V.
  full_name: Mankowski, V.
  last_name: Mankowski
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.
  full_name: Schumacher, K.
  last_name: Schumacher
citation:
  ama: Mankowski V, Hilleringmann U, Schumacher K. 12 kV low current cascaded light
    triggered switch on one silicon chip. <i>Microelectronic Engineering</i>. 2002;46(1-4):413-417.
    doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>
  apa: Mankowski, V., Hilleringmann, U., &#38; Schumacher, K. (2002). 12 kV low current
    cascaded light triggered switch on one silicon chip. <i>Microelectronic Engineering</i>,
    <i>46</i>(1–4), 413–417. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>
  bibtex: '@article{Mankowski_Hilleringmann_Schumacher_2002, title={12 kV low current
    cascaded light triggered switch on one silicon chip}, volume={46}, DOI={<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K.}, year={2002},
    pages={413–417} }'
  chicago: 'Mankowski, V., Ulrich Hilleringmann, and K. Schumacher. “12 KV Low Current
    Cascaded Light Triggered Switch on One Silicon Chip.” <i>Microelectronic Engineering</i>
    46, no. 1–4 (2002): 413–17. <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">https://doi.org/10.1016/s0167-9317(99)00122-7</a>.'
  ieee: 'V. Mankowski, U. Hilleringmann, and K. Schumacher, “12 kV low current cascaded
    light triggered switch on one silicon chip,” <i>Microelectronic Engineering</i>,
    vol. 46, no. 1–4, pp. 413–417, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.'
  mla: Mankowski, V., et al. “12 KV Low Current Cascaded Light Triggered Switch on
    One Silicon Chip.” <i>Microelectronic Engineering</i>, vol. 46, no. 1–4, Elsevier
    BV, 2002, pp. 413–17, doi:<a href="https://doi.org/10.1016/s0167-9317(99)00122-7">10.1016/s0167-9317(99)00122-7</a>.
  short: V. Mankowski, U. Hilleringmann, K. Schumacher, Microelectronic Engineering
    46 (2002) 413–417.
date_created: 2023-01-25T09:13:17Z
date_updated: 2023-03-21T09:58:35Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(99)00122-7
intvolume: '        46'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 413-417
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: 12 kV low current cascaded light triggered switch on one silicon chip
type: journal_article
user_id: '20179'
volume: 46
year: '2002'
...
---
_id: '39891'
author:
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: K.F.
  full_name: Goser, K.F.
  last_name: Goser
citation:
  ama: Horstmann JT, Hilleringmann U, Goser KF. Matching analysis of deposition defined
    50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>. 2002;45(1):299-306.
    doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>
  apa: Horstmann, J. T., Hilleringmann, U., &#38; Goser, K. F. (2002). Matching analysis
    of deposition defined 50-nm MOSFET’s. <i>IEEE Transactions on Electron Devices</i>,
    <i>45</i>(1), 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>
  bibtex: '@article{Horstmann_Hilleringmann_Goser_2002, title={Matching analysis of
    deposition defined 50-nm MOSFET’s}, volume={45}, DOI={<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>},
    number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute
    of Electrical and Electronics Engineers (IEEE)}, author={Horstmann, J.T. and Hilleringmann,
    Ulrich and Goser, K.F.}, year={2002}, pages={299–306} }'
  chicago: 'Horstmann, J.T., Ulrich Hilleringmann, and K.F. Goser. “Matching Analysis
    of Deposition Defined 50-Nm MOSFET’s.” <i>IEEE Transactions on Electron Devices</i>
    45, no. 1 (2002): 299–306. <a href="https://doi.org/10.1109/16.658845">https://doi.org/10.1109/16.658845</a>.'
  ieee: 'J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of
    deposition defined 50-nm MOSFET’s,” <i>IEEE Transactions on Electron Devices</i>,
    vol. 45, no. 1, pp. 299–306, 2002, doi: <a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.'
  mla: Horstmann, J. T., et al. “Matching Analysis of Deposition Defined 50-Nm MOSFET’s.”
    <i>IEEE Transactions on Electron Devices</i>, vol. 45, no. 1, Institute of Electrical
    and Electronics Engineers (IEEE), 2002, pp. 299–306, doi:<a href="https://doi.org/10.1109/16.658845">10.1109/16.658845</a>.
  short: J.T. Horstmann, U. Hilleringmann, K.F. Goser, IEEE Transactions on Electron
    Devices 45 (2002) 299–306.
date_created: 2023-01-25T09:14:43Z
date_updated: 2023-03-21T09:58:01Z
department:
- _id: '59'
doi: 10.1109/16.658845
intvolume: '        45'
issue: '1'
keyword:
- Electrical and Electronic Engineering
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 299-306
publication: IEEE Transactions on Electron Devices
publication_identifier:
  issn:
  - 0018-9383
publication_status: published
publisher: Institute of Electrical and Electronics Engineers (IEEE)
status: public
title: Matching analysis of deposition defined 50-nm MOSFET's
type: journal_article
user_id: '20179'
volume: 45
year: '2002'
...
---
_id: '39886'
author:
- first_name: G
  full_name: Wirth, G
  last_name: Wirth
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: J.T
  full_name: Horstmann, J.T
  last_name: Horstmann
- first_name: K
  full_name: Goser, K
  last_name: Goser
citation:
  ama: Wirth G, Hilleringmann U, Horstmann JT, Goser K. Mesoscopic transport phenomena
    in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>. 2002;43(7):1245-1250.
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>
  apa: Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2002). Mesoscopic
    transport phenomena in ultrashort channel MOSFETs. <i>Solid-State Electronics</i>,
    <i>43</i>(7), 1245–1250. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>
  bibtex: '@article{Wirth_Hilleringmann_Horstmann_Goser_2002, title={Mesoscopic transport
    phenomena in ultrashort channel MOSFETs}, volume={43}, DOI={<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>},
    number={7}, journal={Solid-State Electronics}, publisher={Elsevier BV}, author={Wirth,
    G and Hilleringmann, Ulrich and Horstmann, J.T and Goser, K}, year={2002}, pages={1245–1250}
    }'
  chicago: 'Wirth, G, Ulrich Hilleringmann, J.T Horstmann, and K Goser. “Mesoscopic
    Transport Phenomena in Ultrashort Channel MOSFETs.” <i>Solid-State Electronics</i>
    43, no. 7 (2002): 1245–50. <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">https://doi.org/10.1016/s0038-1101(99)00060-x</a>.'
  ieee: 'G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport
    phenomena in ultrashort channel MOSFETs,” <i>Solid-State Electronics</i>, vol.
    43, no. 7, pp. 1245–1250, 2002, doi: <a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.'
  mla: Wirth, G., et al. “Mesoscopic Transport Phenomena in Ultrashort Channel MOSFETs.”
    <i>Solid-State Electronics</i>, vol. 43, no. 7, Elsevier BV, 2002, pp. 1245–50,
    doi:<a href="https://doi.org/10.1016/s0038-1101(99)00060-x">10.1016/s0038-1101(99)00060-x</a>.
  short: G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, Solid-State Electronics
    43 (2002) 1245–1250.
date_created: 2023-01-25T09:11:50Z
date_updated: 2023-03-21T09:59:22Z
department:
- _id: '59'
doi: 10.1016/s0038-1101(99)00060-x
intvolume: '        43'
issue: '7'
keyword:
- Materials Chemistry
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 1245-1250
publication: Solid-State Electronics
publication_identifier:
  issn:
  - 0038-1101
publication_status: published
publisher: Elsevier BV
status: public
title: Mesoscopic transport phenomena in ultrashort channel MOSFETs
type: journal_article
user_id: '20179'
volume: 43
year: '2002'
...
---
_id: '39876'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.J.
  full_name: Horstmann, T.J.
  last_name: Horstmann
- first_name: K.
  full_name: Goser, K.
  last_name: Goser
citation:
  ama: Otterbach R, Hilleringmann U, Horstmann TJ, Goser K. Structures with a minimum
    feature size of less than 100 nm in CVD-diamond for sensor applications. <i>Diamond
    and Related Materials</i>. 2002;10(3-7):511-514. doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>
  apa: Otterbach, R., Hilleringmann, U., Horstmann, T. J., &#38; Goser, K. (2002).
    Structures with a minimum feature size of less than 100 nm in CVD-diamond for
    sensor applications. <i>Diamond and Related Materials</i>, <i>10</i>(3–7), 511–514.
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>
  bibtex: '@article{Otterbach_Hilleringmann_Horstmann_Goser_2002, title={Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications},
    volume={10}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>},
    number={3–7}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich and Horstmann, T.J. and Goser,
    K.}, year={2002}, pages={511–514} }'
  chicago: 'Otterbach, R., Ulrich Hilleringmann, T.J. Horstmann, and K. Goser. “Structures
    with a Minimum Feature Size of Less than 100 Nm in CVD-Diamond for Sensor Applications.”
    <i>Diamond and Related Materials</i> 10, no. 3–7 (2002): 511–14. <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">https://doi.org/10.1016/s0925-9635(01)00373-9</a>.'
  ieee: 'R. Otterbach, U. Hilleringmann, T. J. Horstmann, and K. Goser, “Structures
    with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications,”
    <i>Diamond and Related Materials</i>, vol. 10, no. 3–7, pp. 511–514, 2002, doi:
    <a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.'
  mla: Otterbach, R., et al. “Structures with a Minimum Feature Size of Less than
    100 Nm in CVD-Diamond for Sensor Applications.” <i>Diamond and Related Materials</i>,
    vol. 10, no. 3–7, Elsevier BV, 2002, pp. 511–14, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00373-9">10.1016/s0925-9635(01)00373-9</a>.
  short: R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related
    Materials 10 (2002) 511–514.
date_created: 2023-01-25T09:07:37Z
date_updated: 2023-03-21T10:03:16Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00373-9
intvolume: '        10'
issue: 3-7
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 511-514
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Structures with a minimum feature size of less than 100 nm in CVD-diamond for
  sensor applications
type: journal_article
user_id: '20179'
volume: 10
year: '2002'
...
---
_id: '39877'
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
- first_name: T.
  full_name: Vieregge, T.
  last_name: Vieregge
- first_name: J.T.
  full_name: Horstmann, J.T.
  last_name: Horstmann
citation:
  ama: Hilleringmann U, Vieregge T, Horstmann JT. A structure definition technique
    for 25 nm lines of silicon and related materials. <i>Microelectronic Engineering</i>.
    2002;53(1-4):569-572. doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>
  apa: Hilleringmann, U., Vieregge, T., &#38; Horstmann, J. T. (2002). A structure
    definition technique for 25 nm lines of silicon and related materials. <i>Microelectronic
    Engineering</i>, <i>53</i>(1–4), 569–572. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>
  bibtex: '@article{Hilleringmann_Vieregge_Horstmann_2002, title={A structure definition
    technique for 25 nm lines of silicon and related materials}, volume={53}, DOI={<a
    href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>},
    number={1–4}, journal={Microelectronic Engineering}, publisher={Elsevier BV},
    author={Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T.}, year={2002},
    pages={569–572} }'
  chicago: 'Hilleringmann, Ulrich, T. Vieregge, and J.T. Horstmann. “A Structure Definition
    Technique for 25 Nm Lines of Silicon and Related Materials.” <i>Microelectronic
    Engineering</i> 53, no. 1–4 (2002): 569–72. <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">https://doi.org/10.1016/s0167-9317(00)00380-4</a>.'
  ieee: 'U. Hilleringmann, T. Vieregge, and J. T. Horstmann, “A structure definition
    technique for 25 nm lines of silicon and related materials,” <i>Microelectronic
    Engineering</i>, vol. 53, no. 1–4, pp. 569–572, 2002, doi: <a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.'
  mla: Hilleringmann, Ulrich, et al. “A Structure Definition Technique for 25 Nm Lines
    of Silicon and Related Materials.” <i>Microelectronic Engineering</i>, vol. 53,
    no. 1–4, Elsevier BV, 2002, pp. 569–72, doi:<a href="https://doi.org/10.1016/s0167-9317(00)00380-4">10.1016/s0167-9317(00)00380-4</a>.
  short: U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering
    53 (2002) 569–572.
date_created: 2023-01-25T09:08:13Z
date_updated: 2023-03-21T10:03:00Z
department:
- _id: '59'
doi: 10.1016/s0167-9317(00)00380-4
intvolume: '        53'
issue: 1-4
keyword:
- Electrical and Electronic Engineering
- Surfaces
- Coatings and Films
- Condensed Matter Physics
- Atomic and Molecular Physics
- and Optics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 569-572
publication: Microelectronic Engineering
publication_identifier:
  issn:
  - 0167-9317
publication_status: published
publisher: Elsevier BV
status: public
title: A structure definition technique for 25 nm lines of silicon and related materials
type: journal_article
user_id: '20179'
volume: 53
year: '2002'
...
---
_id: '39874'
author:
- first_name: R.
  full_name: Otterbach, R.
  last_name: Otterbach
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Otterbach R, Hilleringmann U. Reactive ion etching of CVD-diamond for piezoresistive
    pressure sensors. <i>Diamond and Related Materials</i>. 2002;11(3-6):841-844.
    doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>
  apa: Otterbach, R., &#38; Hilleringmann, U. (2002). Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors. <i>Diamond and Related Materials</i>, <i>11</i>(3–6),
    841–844. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>
  bibtex: '@article{Otterbach_Hilleringmann_2002, title={Reactive ion etching of CVD-diamond
    for piezoresistive pressure sensors}, volume={11}, DOI={<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>},
    number={3–6}, journal={Diamond and Related Materials}, publisher={Elsevier BV},
    author={Otterbach, R. and Hilleringmann, Ulrich}, year={2002}, pages={841–844}
    }'
  chicago: 'Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i> 11,
    no. 3–6 (2002): 841–44. <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">https://doi.org/10.1016/s0925-9635(01)00703-8</a>.'
  ieee: 'R. Otterbach and U. Hilleringmann, “Reactive ion etching of CVD-diamond for
    piezoresistive pressure sensors,” <i>Diamond and Related Materials</i>, vol. 11,
    no. 3–6, pp. 841–844, 2002, doi: <a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.'
  mla: Otterbach, R., and Ulrich Hilleringmann. “Reactive Ion Etching of CVD-Diamond
    for Piezoresistive Pressure Sensors.” <i>Diamond and Related Materials</i>, vol.
    11, no. 3–6, Elsevier BV, 2002, pp. 841–44, doi:<a href="https://doi.org/10.1016/s0925-9635(01)00703-8">10.1016/s0925-9635(01)00703-8</a>.
  short: R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.
date_created: 2023-01-25T09:05:52Z
date_updated: 2023-03-21T10:03:48Z
department:
- _id: '59'
doi: 10.1016/s0925-9635(01)00703-8
intvolume: '        11'
issue: 3-6
keyword:
- Electrical and Electronic Engineering
- Materials Chemistry
- Mechanical Engineering
- General Chemistry
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 841-844
publication: Diamond and Related Materials
publication_identifier:
  issn:
  - 0925-9635
publication_status: published
publisher: Elsevier BV
status: public
title: Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
type: journal_article
user_id: '20179'
volume: 11
year: '2002'
...
---
_id: '39875'
abstract:
- lang: eng
  text: Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten
    der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten
    eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen
    zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als
    Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen
    von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben
    dienen.
author:
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: 'Hilleringmann U. Metallisierung und Kontakte. In: <i>Silizium-Halbleitertechnologie</i>.
    Vieweg+Teubner Verlag; 2002:131–151. doi:<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>'
  apa: Hilleringmann, U. (2002). Metallisierung und Kontakte. In <i>Silizium-Halbleitertechnologie</i>
    (pp. 131–151). Vieweg+Teubner Verlag. <a href="https://doi.org/10.1007/978-3-322-94119-0_8">https://doi.org/10.1007/978-3-322-94119-0_8</a>
  bibtex: '@inbook{Hilleringmann_2002, place={Wiesbaden}, title={Metallisierung und
    Kontakte}, DOI={<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>},
    booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag},
    author={Hilleringmann, Ulrich}, year={2002}, pages={131–151} }'
  chicago: 'Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” In <i>Silizium-Halbleitertechnologie</i>,
    131–151. Wiesbaden: Vieweg+Teubner Verlag, 2002. <a href="https://doi.org/10.1007/978-3-322-94119-0_8">https://doi.org/10.1007/978-3-322-94119-0_8</a>.'
  ieee: 'U. Hilleringmann, “Metallisierung und Kontakte,” in <i>Silizium-Halbleitertechnologie</i>,
    Wiesbaden: Vieweg+Teubner Verlag, 2002, pp. 131–151.'
  mla: Hilleringmann, Ulrich. “Metallisierung Und Kontakte.” <i>Silizium-Halbleitertechnologie</i>,
    Vieweg+Teubner Verlag, 2002, pp. 131–151, doi:<a href="https://doi.org/10.1007/978-3-322-94119-0_8">10.1007/978-3-322-94119-0_8</a>.
  short: 'U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag,
    Wiesbaden, 2002, pp. 131–151.'
date_created: 2023-01-25T09:06:58Z
date_updated: 2023-03-21T10:03:35Z
department:
- _id: '59'
doi: 10.1007/978-3-322-94119-0_8
language:
- iso: eng
page: 131–151
place: Wiesbaden
publication: Silizium-Halbleitertechnologie
publication_identifier:
  isbn:
  - 978-3-322-94119-0
publisher: Vieweg+Teubner Verlag
status: public
title: Metallisierung und Kontakte
type: book_chapter
user_id: '20179'
year: '2002'
...
---
_id: '43297'
abstract:
- lang: eng
  text: A microscopic many-body theory describing the optical and electronic properties
    of semiconductors and semiconductor nanostructures is briefly reviewed. At the
    semiclassical level, the optical response is computed using Maxwell's equations
    together with the semiconductor Bloch equations which describe the dynamics of
    the diagonal and the off-diagonal terms of the reduced single-particle density
    matrix. These equations include the coupling between the semiconductor and the
    optical field as well as Coulomb many-body interactions among the optically excited
    carriers. Under quasi-equilibrium conditions, luminescence spectra can be obtained
    from absorption spectra on the basis of the Kubo–Martin–Schwinger relation for
    conditions usually limited to the regime of optical gain (lasers). More generally,
    light emission has to be computed at a fully quantum mechanical level leading
    to semiconductor luminescence equations.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
- first_name: W.
  full_name: Hoyer, W.
  last_name: Hoyer
- first_name: M.
  full_name: Kira, M.
  last_name: Kira
citation:
  ama: 'Meier T, Koch SW, Hoyer W, Kira M. Theory of the optical properties of semiconductor
    nanostructures. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>.
    2002;14(1-2):45-52. doi:<a href="https://doi.org/10.1016/S1386-9477(02)00358-2">10.1016/S1386-9477(02)00358-2</a>'
  apa: 'Meier, T., Koch, S. W., Hoyer, W., &#38; Kira, M. (2002). Theory of the optical
    properties of semiconductor nanostructures. <i>Physica E: Low-Dimensional Systems
    and Nanostructures</i>, <i>14</i>(1–2), 45–52. <a href="https://doi.org/10.1016/S1386-9477(02)00358-2">https://doi.org/10.1016/S1386-9477(02)00358-2</a>'
  bibtex: '@article{Meier_Koch_Hoyer_Kira_2002, title={Theory of the optical properties
    of semiconductor nanostructures}, volume={14}, DOI={<a href="https://doi.org/10.1016/S1386-9477(02)00358-2">10.1016/S1386-9477(02)00358-2</a>},
    number={1–2}, journal={Physica E: Low-Dimensional Systems and Nanostructures},
    publisher={North-Holland}, author={Meier, Torsten and Koch, S.W. and Hoyer, W.
    and Kira, M.}, year={2002}, pages={45–52} }'
  chicago: 'Meier, Torsten, S.W. Koch, W. Hoyer, and M. Kira. “Theory of the Optical
    Properties of Semiconductor Nanostructures.” <i>Physica E: Low-Dimensional Systems
    and Nanostructures</i> 14, no. 1–2 (2002): 45–52. <a href="https://doi.org/10.1016/S1386-9477(02)00358-2">https://doi.org/10.1016/S1386-9477(02)00358-2</a>.'
  ieee: 'T. Meier, S. W. Koch, W. Hoyer, and M. Kira, “Theory of the optical properties
    of semiconductor nanostructures,” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>,
    vol. 14, no. 1–2, pp. 45–52, 2002, doi: <a href="https://doi.org/10.1016/S1386-9477(02)00358-2">10.1016/S1386-9477(02)00358-2</a>.'
  mla: 'Meier, Torsten, et al. “Theory of the Optical Properties of Semiconductor
    Nanostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>,
    vol. 14, no. 1–2, North-Holland, 2002, pp. 45–52, doi:<a href="https://doi.org/10.1016/S1386-9477(02)00358-2">10.1016/S1386-9477(02)00358-2</a>.'
  short: 'T. Meier, S.W. Koch, W. Hoyer, M. Kira, Physica E: Low-Dimensional Systems
    and Nanostructures 14 (2002) 45–52.'
date_created: 2023-04-02T13:31:23Z
date_updated: 2023-04-02T13:31:25Z
department:
- _id: '293'
doi: 10.1016/S1386-9477(02)00358-2
extern: '1'
intvolume: '        14'
issue: 1-2
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://www.sciencedirect.com/science/article/abs/pii/S1386947702003582
oa: '1'
page: 45-52
publication: 'Physica E: Low-Dimensional Systems and Nanostructures'
publication_status: published
publisher: North-Holland
status: public
title: Theory of the optical properties of semiconductor nanostructures
type: journal_article
user_id: '49063'
volume: 14
year: '2002'
...
---
_id: '43296'
abstract:
- lang: eng
  text: A three-beam configuration is used to investigate the spectrally resolved
    wave-mixing signal of a ZnSe single quantum well. The spectrum recorded in direction
    2 k2–k1 shows coherent oscillations induced by a delayed third pulse with direction
    k3. Intensity and polarization-dependent measurements indicate that the signal
    is generated by a combination of four- and six-wave mixing. The origin of the
    oscillations can be explained qualitatively by a two-level model. The polarization-dependent
    experimental results require the treatment of many-body correlations and are well
    explained by microscopic calculations including four-particle correlations up
    to fifth order in the fields.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: H.P.
  full_name: Wagner, H.P.
  last_name: Wagner
- first_name: H.-P.
  full_name: Tranitz, H.-P.
  last_name: Tranitz
- first_name: Matthias
  full_name: Reichelt, Matthias
  id: '138'
  last_name: Reichelt
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
citation:
  ama: Meier T, Wagner HP, Tranitz H-P, Reichelt M, Koch SW. Coherent Oscillations
    in Multiwave Mixing Due to Higher‐Order Coulomb Correlations. <i>physica status
    solidi (a)</i>. 2002;190(3):843-847. doi:<a href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>
  apa: Meier, T., Wagner, H. P., Tranitz, H.-P., Reichelt, M., &#38; Koch, S. W. (2002).
    Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations.
    <i>Physica Status Solidi (a)</i>, <i>190</i>(3), 843–847. <a href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>
  bibtex: '@article{Meier_Wagner_Tranitz_Reichelt_Koch_2002, title={Coherent Oscillations
    in Multiwave Mixing Due to Higher‐Order Coulomb Correlations}, volume={190}, DOI={<a
    href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>},
    number={3}, journal={physica status solidi (a)}, publisher={WILEY‐VCH Verlag Berlin
    GmbH}, author={Meier, Torsten and Wagner, H.P. and Tranitz, H.-P. and Reichelt,
    Matthias and Koch, S.W.}, year={2002}, pages={843–847} }'
  chicago: 'Meier, Torsten, H.P. Wagner, H.-P. Tranitz, Matthias Reichelt, and S.W.
    Koch. “Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations.”
    <i>Physica Status Solidi (a)</i> 190, no. 3 (2002): 843–47. <a href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.'
  ieee: 'T. Meier, H. P. Wagner, H.-P. Tranitz, M. Reichelt, and S. W. Koch, “Coherent
    Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations,” <i>physica
    status solidi (a)</i>, vol. 190, no. 3, pp. 843–847, 2002, doi: <a href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.'
  mla: Meier, Torsten, et al. “Coherent Oscillations in Multiwave Mixing Due to Higher‐Order
    Coulomb Correlations.” <i>Physica Status Solidi (a)</i>, vol. 190, no. 3, WILEY‐VCH
    Verlag Berlin GmbH, 2002, pp. 843–47, doi:<a href="https://doi.org/10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B">10.1002/1521-396X(200204)190:3&#60;843::AID-PSSA843&#62;3.0.CO;2-B</a>.
  short: T. Meier, H.P. Wagner, H.-P. Tranitz, M. Reichelt, S.W. Koch, Physica Status
    Solidi (a) 190 (2002) 843–847.
date_created: 2023-04-02T13:28:56Z
date_updated: 2023-04-02T13:28:58Z
department:
- _id: '293'
doi: 10.1002/1521-396X(200204)190:3<843::AID-PSSA843>3.0.CO;2-B
extern: '1'
intvolume: '       190'
issue: '3'
language:
- iso: eng
main_file_link:
- url: https://onlinelibrary.wiley.com/doi/abs/10.1002/1521-396X(200204)190:3%3C843::AID-PSSA843%3E3.0.CO;2-B
page: 843-847
publication: physica status solidi (a)
publication_status: published
publisher: WILEY‐VCH Verlag Berlin GmbH
status: public
title: Coherent Oscillations in Multiwave Mixing Due to Higher‐Order Coulomb Correlations
type: journal_article
user_id: '49063'
volume: 190
year: '2002'
...
---
_id: '43300'
abstract:
- lang: eng
  text: The influence of coupling, correlation, and disorder on exciton and biexciton
    signatures is investigated using coherent excitation spectroscopy. Different biexciton-induced
    transitions of a single biexciton state are spectrally resolved. One of the transitions
    is found to be particularly sensitive to disorder. Mixed biexciton resonances,
    resulting from attractively interacting heavy and light hole exciton states, are
    identified. The observations are analyzed on the basis of microscopic model calculations.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: E.
  full_name: Finger, E.
  last_name: Finger
- first_name: S.P.
  full_name: Kraft, S.P.
  last_name: Kraft
- first_name: M.
  full_name: Hofmann, M.
  last_name: Hofmann
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
- first_name: W.
  full_name: Stolz, W.
  last_name: Stolz
- first_name: W.W.
  full_name: Rühle, W.W.
  last_name: Rühle
citation:
  ama: Meier T, Finger E, Kraft SP, et al. Coulomb correlations and biexciton signatures
    in coherent excitation spectroscopy of semiconductor quantum wells. <i>physica
    status solidi (b)</i>. 2002;234(1):424-434. doi:<a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V">10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>
  apa: Meier, T., Finger, E., Kraft, S. P., Hofmann, M., Koch, S. W., Stolz, W., &#38;
    Rühle, W. W. (2002). Coulomb correlations and biexciton signatures in coherent
    excitation spectroscopy of semiconductor quantum wells. <i>Physica Status Solidi
    (b)</i>, <i>234</i>(1), 424–434. <a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V">https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>
  bibtex: '@article{Meier_Finger_Kraft_Hofmann_Koch_Stolz_Rühle_2002, title={Coulomb
    correlations and biexciton signatures in coherent excitation spectroscopy of semiconductor
    quantum wells}, volume={234}, DOI={<a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V">10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>},
    number={1}, journal={physica status solidi (b)}, publisher={WILEY‐VCH Verlag},
    author={Meier, Torsten and Finger, E. and Kraft, S.P. and Hofmann, M. and Koch,
    S.W. and Stolz, W. and Rühle, W.W.}, year={2002}, pages={424–434} }'
  chicago: 'Meier, Torsten, E. Finger, S.P. Kraft, M. Hofmann, S.W. Koch, W. Stolz,
    and W.W. Rühle. “Coulomb Correlations and Biexciton Signatures in Coherent Excitation
    Spectroscopy of Semiconductor Quantum Wells.” <i>Physica Status Solidi (b)</i>
    234, no. 1 (2002): 424–34. <a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V">https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>.'
  ieee: 'T. Meier <i>et al.</i>, “Coulomb correlations and biexciton signatures in
    coherent excitation spectroscopy of semiconductor quantum wells,” <i>physica status
    solidi (b)</i>, vol. 234, no. 1, pp. 424–434, 2002, doi: <a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V">10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>.'
  mla: Meier, Torsten, et al. “Coulomb Correlations and Biexciton Signatures in Coherent
    Excitation Spectroscopy of Semiconductor Quantum Wells.” <i>Physica Status Solidi
    (b)</i>, vol. 234, no. 1, WILEY‐VCH Verlag, 2002, pp. 424–34, doi:<a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V">10.1002/1521-3951(200211)234:1&#60;424::AID-PSSB424&#62;3.0.CO;2-V</a>.
  short: T. Meier, E. Finger, S.P. Kraft, M. Hofmann, S.W. Koch, W. Stolz, W.W. Rühle,
    Physica Status Solidi (b) 234 (2002) 424–434.
date_created: 2023-04-02T13:52:54Z
date_updated: 2023-04-02T13:52:57Z
department:
- _id: '293'
doi: 10.1002/1521-3951(200211)234:1<424::AID-PSSB424>3.0.CO;2-V
extern: '1'
intvolume: '       234'
issue: '1'
language:
- iso: eng
main_file_link:
- url: https://onlinelibrary.wiley.com/doi/abs/10.1002/1521-3951(200211)234:1%3C424::AID-PSSB424%3E3.0.CO;2-V
page: 424-434
publication: physica status solidi (b)
publication_status: published
publisher: WILEY‐VCH Verlag
status: public
title: Coulomb correlations and biexciton signatures in coherent excitation spectroscopy
  of semiconductor quantum wells
type: journal_article
user_id: '49063'
volume: 234
year: '2002'
...
---
_id: '43298'
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: Matthias
  full_name: Reichelt, Matthias
  id: '138'
  last_name: Reichelt
- first_name: C.
  full_name: Schlichenmaier, C.
  last_name: Schlichenmaier
- first_name: S.
  full_name: Siggelkow, S.
  last_name: Siggelkow
- first_name: P.
  full_name: Thomas, P.
  last_name: Thomas
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
- first_name: S.
  full_name: Weiser, S.
  last_name: Weiser
- first_name: C.
  full_name: Sieh, C.
  last_name: Sieh
citation:
  ama: 'Meier T, Reichelt M, Schlichenmaier C, et al. Many-Body Correlation Effects
    in Photoexcited Semiconductor Heterostructures. In: Rollnik H, Wolf D, eds. <i>Germany
    NIC Series Vol. 9</i>. NIC Symposium 2001: Symposium 5.-6. December 2001, Forschungszentrum
    Jülich: Proceedings. John von Neumann Institute for Computing; 2002:315-324.'
  apa: Meier, T., Reichelt, M., Schlichenmaier, C., Siggelkow, S., Thomas, P., Koch,
    S. W., Weiser, S., &#38; Sieh, C. (2002). Many-Body Correlation Effects in Photoexcited
    Semiconductor Heterostructures. In H. Rollnik &#38; D. Wolf (Eds.), <i>Germany
    NIC Series Vol. 9</i> (pp. 315–324). John von Neumann Institute for Computing.
  bibtex: '@inbook{Meier_Reichelt_Schlichenmaier_Siggelkow_Thomas_Koch_Weiser_Sieh_2002,
    place={Jülich}, series={NIC Symposium 2001: Symposium 5.-6. December 2001, Forschungszentrum
    Jülich: Proceedings}, title={Many-Body Correlation Effects in Photoexcited Semiconductor
    Heterostructures}, booktitle={Germany NIC Series Vol. 9}, publisher={John von
    Neumann Institute for Computing}, author={Meier, Torsten and Reichelt, Matthias
    and Schlichenmaier, C. and Siggelkow, S. and Thomas, P. and Koch, S.W. and Weiser,
    S. and Sieh, C.}, editor={Rollnik, Horst and Wolf, Dietrich}, year={2002}, pages={315–324},
    collection={NIC Symposium 2001: Symposium 5.-6. December 2001, Forschungszentrum
    Jülich: Proceedings} }'
  chicago: 'Meier, Torsten, Matthias Reichelt, C. Schlichenmaier, S. Siggelkow, P.
    Thomas, S.W. Koch, S. Weiser, and C. Sieh. “Many-Body Correlation Effects in Photoexcited
    Semiconductor Heterostructures.” In <i>Germany NIC Series Vol. 9</i>, edited by
    Horst Rollnik and Dietrich Wolf, 315–24. NIC Symposium 2001: Symposium 5.-6. December
    2001, Forschungszentrum Jülich: Proceedings. Jülich: John von Neumann Institute
    for Computing, 2002.'
  ieee: 'T. Meier <i>et al.</i>, “Many-Body Correlation Effects in Photoexcited Semiconductor
    Heterostructures,” in <i>Germany NIC Series Vol. 9</i>, H. Rollnik and D. Wolf,
    Eds. Jülich: John von Neumann Institute for Computing, 2002, pp. 315–324.'
  mla: Meier, Torsten, et al. “Many-Body Correlation Effects in Photoexcited Semiconductor
    Heterostructures.” <i>Germany NIC Series Vol. 9</i>, edited by Horst Rollnik and
    Dietrich Wolf, John von Neumann Institute for Computing, 2002, pp. 315–24.
  short: 'T. Meier, M. Reichelt, C. Schlichenmaier, S. Siggelkow, P. Thomas, S.W.
    Koch, S. Weiser, C. Sieh, in: H. Rollnik, D. Wolf (Eds.), Germany NIC Series Vol.
    9, John von Neumann Institute for Computing, Jülich, 2002, pp. 315–324.'
date_created: 2023-04-02T13:41:13Z
date_updated: 2023-04-02T13:45:18Z
department:
- _id: '293'
editor:
- first_name: Horst
  full_name: Rollnik, Horst
  last_name: Rollnik
- first_name: Dietrich
  full_name: Wolf, Dietrich
  last_name: Wolf
extern: '1'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://core.ac.uk/download/pdf/35009919.pdf
oa: '1'
page: ' 315-324'
place: Jülich
publication: Germany NIC Series Vol. 9
publication_identifier:
  isbn:
  - 3-00-009055-X
publication_status: published
publisher: John von Neumann Institute for Computing
series_title: 'NIC Symposium 2001: Symposium 5.-6. December 2001, Forschungszentrum
  Jülich: Proceedings'
status: public
title: Many-Body Correlation Effects in Photoexcited Semiconductor Heterostructures
type: book_chapter
user_id: '49063'
year: '2002'
...
---
_id: '43601'
author:
- first_name: Harald
  full_name: Schroeter-Wittke, Harald
  id: '480'
  last_name: Schroeter-Wittke
citation:
  ama: 'Schroeter-Wittke H. Das Credo der Komponisten. Ein Feature. In: Fermor G,
    Schmidt-Rost R, eds. <i>Glaube Gefragt. Ein Credo-Prjekt</i>. ; 2002:106-154.'
  apa: Schroeter-Wittke, H. (2002). Das Credo der Komponisten. Ein Feature. In G.
    Fermor &#38; R. Schmidt-Rost (Eds.), <i>Glaube gefragt. Ein Credo-Prjekt</i> (pp.
    106–154).
  bibtex: '@inbook{Schroeter-Wittke_2002, title={Das Credo der Komponisten. Ein Feature},
    booktitle={Glaube gefragt. Ein Credo-Prjekt}, author={Schroeter-Wittke, Harald},
    editor={Fermor, Gotthard and Schmidt-Rost, Reinhard}, year={2002}, pages={106–154}
    }'
  chicago: Schroeter-Wittke, Harald. “Das Credo Der Komponisten. Ein Feature.” In
    <i>Glaube Gefragt. Ein Credo-Prjekt</i>, edited by Gotthard Fermor and Reinhard
    Schmidt-Rost, 106–54, 2002.
  ieee: H. Schroeter-Wittke, “Das Credo der Komponisten. Ein Feature,” in <i>Glaube
    gefragt. Ein Credo-Prjekt</i>, G. Fermor and R. Schmidt-Rost, Eds. 2002, pp. 106–154.
  mla: Schroeter-Wittke, Harald. “Das Credo Der Komponisten. Ein Feature.” <i>Glaube
    Gefragt. Ein Credo-Prjekt</i>, edited by Gotthard Fermor and Reinhard Schmidt-Rost,
    2002, pp. 106–54.
  short: 'H. Schroeter-Wittke, in: G. Fermor, R. Schmidt-Rost (Eds.), Glaube Gefragt.
    Ein Credo-Prjekt, 2002, pp. 106–154.'
date_created: 2023-04-15T00:05:50Z
date_updated: 2023-04-15T00:05:56Z
editor:
- first_name: Gotthard
  full_name: Fermor, Gotthard
  last_name: Fermor
- first_name: Reinhard
  full_name: Schmidt-Rost, Reinhard
  last_name: Schmidt-Rost
language:
- iso: eng
page: 106-154
publication: Glaube gefragt. Ein Credo-Prjekt
status: public
title: Das Credo der Komponisten. Ein Feature
type: book_chapter
user_id: '480'
year: '2002'
...
---
_id: '43599'
citation:
  ama: Prößdorf D, Schroeter-Wittke H, eds. <i>Rehinische Karnevalstheologie. PROT’s
    Sitzungen Und Jecke Predigten</i>. CMZ-Verlag; 2002.
  apa: Prößdorf, D., &#38; Schroeter-Wittke, H. (Eds.). (2002). <i>Rehinische Karnevalstheologie.
    PROT’s Sitzungen und jecke Predigten</i>. CMZ-Verlag.
  bibtex: '@book{Prößdorf_Schroeter-Wittke_2002, place={Rheinbach-Merzbach}, title={Rehinische
    Karnevalstheologie. PROT’s Sitzungen und jecke Predigten}, publisher={CMZ-Verlag},
    year={2002} }'
  chicago: 'Prößdorf, Detlev, and Harald Schroeter-Wittke, eds. <i>Rehinische Karnevalstheologie.
    PROT’s Sitzungen Und Jecke Predigten</i>. Rheinbach-Merzbach: CMZ-Verlag, 2002.'
  ieee: 'D. Prößdorf and H. Schroeter-Wittke, Eds., <i>Rehinische Karnevalstheologie.
    PROT’s Sitzungen und jecke Predigten</i>. Rheinbach-Merzbach: CMZ-Verlag, 2002.'
  mla: Prößdorf, Detlev, and Harald Schroeter-Wittke, editors. <i>Rehinische Karnevalstheologie.
    PROT’s Sitzungen Und Jecke Predigten</i>. CMZ-Verlag, 2002.
  short: D. Prößdorf, H. Schroeter-Wittke, eds., Rehinische Karnevalstheologie. PROT’s
    Sitzungen Und Jecke Predigten, CMZ-Verlag, Rheinbach-Merzbach, 2002.
date_created: 2023-04-15T00:04:16Z
date_updated: 2023-04-15T00:04:42Z
editor:
- first_name: Detlev
  full_name: Prößdorf, Detlev
  last_name: Prößdorf
- first_name: Harald
  full_name: Schroeter-Wittke, Harald
  id: '480'
  last_name: Schroeter-Wittke
language:
- iso: eng
page: '240'
place: Rheinbach-Merzbach
publication_identifier:
  isbn:
  - 3-87062-512-0
publisher: CMZ-Verlag
status: public
title: Rehinische Karnevalstheologie. PROT's Sitzungen und jecke Predigten
type: book_editor
user_id: '480'
year: '2002'
...
---
_id: '44191'
author:
- first_name: Inez
  full_name: Müller, Inez
  id: '26755'
  last_name: Müller
citation:
  ama: 'Müller I. Die Kategorien Zeit und Raum im Roman “Stille Zeile Sechs” von Monika
    Maron. In: <i>Erinnerte und erfundene Wirklichkeit</i>. iudicium Verlag; 2002:14.'
  apa: Müller, I. (2002). Die Kategorien Zeit und Raum im Roman “Stille Zeile Sechs”
    von Monika Maron. <i>Erinnerte und erfundene Wirklichkeit</i>, 14.
  bibtex: '@inproceedings{Müller_2002, place={Göteborg}, title={Die Kategorien Zeit
    und Raum im Roman “Stille Zeile Sechs” von Monika Maron}, booktitle={Erinnerte
    und erfundene Wirklichkeit}, publisher={iudicium Verlag}, author={Müller, Inez},
    year={2002}, pages={14} }'
  chicago: 'Müller, Inez. “Die Kategorien Zeit und Raum im Roman ‘Stille Zeile Sechs’
    von Monika Maron.” In <i>Erinnerte und erfundene Wirklichkeit</i>, 14. Göteborg:
    iudicium Verlag, 2002.'
  ieee: I. Müller, “Die Kategorien Zeit und Raum im Roman ‘Stille Zeile Sechs’ von
    Monika Maron,” in <i>Erinnerte und erfundene Wirklichkeit</i>, Universität Göteborg,
    2002, p. 14.
  mla: Müller, Inez. “Die Kategorien Zeit und Raum im Roman ‘Stille Zeile Sechs’ von
    Monika Maron.” <i>Erinnerte und erfundene Wirklichkeit</i>, iudicium Verlag, 2002,
    p. 14.
  short: 'I. Müller, in: Erinnerte und erfundene Wirklichkeit, iudicium Verlag, Göteborg,
    2002, p. 14.'
conference:
  location: Universität Göteborg
date_created: 2023-04-26T09:38:39Z
date_updated: 2023-04-26T09:38:50Z
department:
- _id: '5'
extern: '1'
language:
- iso: ger
page: '14'
place: Göteborg
publication: Erinnerte und erfundene Wirklichkeit
publication_status: published
publisher: iudicium Verlag
status: public
title: Die Kategorien Zeit und Raum im Roman "Stille Zeile Sechs" von Monika Maron
type: conference
user_id: '26755'
year: '2002'
...
---
_id: '43299'
abstract:
- lang: eng
  text: A density-matrix theory for absorption changes in semiconductors induced by
    electron or hole occupations is outlined. Bound and unbound trions are included
    via four-point correlation functions representing electron–hole pair transitions
    in the presence of carrier populations. The spectra calculated for semiconductor
    nanorings show bleaching of the exciton resonance and induced absorption at energies
    corresponding to transitions to bound and unbound trion states. Without a magnetic
    field, induced absorption below the exciton line due to bound negatively (positively)
    charged trions appears when the two electrons (holes) of the trion are in different
    bands. A magnetic field introduces characteristic modifications of the spectra
    that can be attributed to the Aharonov–Bohm effect. It may lead to the formation
    of additional bound magneto-trion states.
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: P.
  full_name: Thomas, P.
  last_name: Thomas
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
- first_name: K.
  full_name: Maschke, K.
  last_name: Maschke
citation:
  ama: Meier T, Thomas P, Koch SW, Maschke K. Signatures of trions in the optical
    spectra of doped semiconductor nanorings in a magnetic field. <i>physica status
    solidi (b)</i>. 2002;234(1):283-293. doi:<a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J">10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>
  apa: Meier, T., Thomas, P., Koch, S. W., &#38; Maschke, K. (2002). Signatures of
    trions in the optical spectra of doped semiconductor nanorings in a magnetic field.
    <i>Physica Status Solidi (b)</i>, <i>234</i>(1), 283–293. <a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J">https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>
  bibtex: '@article{Meier_Thomas_Koch_Maschke_2002, title={Signatures of trions in
    the optical spectra of doped semiconductor nanorings in a magnetic field}, volume={234},
    DOI={<a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J">10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>},
    number={1}, journal={physica status solidi (b)}, publisher={WILEY‐VCH Verlag},
    author={Meier, Torsten and Thomas, P. and Koch, S.W. and Maschke, K.}, year={2002},
    pages={283–293} }'
  chicago: 'Meier, Torsten, P. Thomas, S.W. Koch, and K. Maschke. “Signatures of Trions
    in the Optical Spectra of Doped Semiconductor Nanorings in a Magnetic Field.”
    <i>Physica Status Solidi (b)</i> 234, no. 1 (2002): 283–93. <a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J">https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>.'
  ieee: 'T. Meier, P. Thomas, S. W. Koch, and K. Maschke, “Signatures of trions in
    the optical spectra of doped semiconductor nanorings in a magnetic field,” <i>physica
    status solidi (b)</i>, vol. 234, no. 1, pp. 283–293, 2002, doi: <a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J">10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>.'
  mla: Meier, Torsten, et al. “Signatures of Trions in the Optical Spectra of Doped
    Semiconductor Nanorings in a Magnetic Field.” <i>Physica Status Solidi (b)</i>,
    vol. 234, no. 1, WILEY‐VCH Verlag, 2002, pp. 283–93, doi:<a href="https://doi.org/10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J">10.1002/1521-3951(200211)234:1&#60;283::AID-PSSB283&#62;3.0.CO;2-J</a>.
  short: T. Meier, P. Thomas, S.W. Koch, K. Maschke, Physica Status Solidi (b) 234
    (2002) 283–293.
date_created: 2023-04-02T13:50:19Z
date_updated: 2023-05-01T13:28:24Z
department:
- _id: '293'
doi: 10.1002/1521-3951(200211)234:1<283::AID-PSSB283>3.0.CO;2-J
extern: '1'
intvolume: '       234'
issue: '1'
language:
- iso: eng
main_file_link:
- url: https://onlinelibrary.wiley.com/doi/abs/10.1002/1521-3951(200211)234:1%3C283::AID-PSSB283%3E3.0.CO;2-J
page: 283-293
publication: physica status solidi (b)
publication_status: published
publisher: WILEY‐VCH Verlag
status: public
title: Signatures of trions in the optical spectra of doped semiconductor nanorings
  in a magnetic field
type: journal_article
user_id: '49063'
volume: 234
year: '2002'
...
---
_id: '43301'
author:
- first_name: Torsten
  full_name: Meier, Torsten
  id: '344'
  last_name: Meier
  orcid: 0000-0001-8864-2072
- first_name: S.W.
  full_name: Koch, S.W.
  last_name: Koch
citation:
  ama: Meier T, Koch SW. Optodynamik. <i>Physik Journal</i>. 2002;1(12):41-48.
  apa: Meier, T., &#38; Koch, S. W. (2002). Optodynamik. <i>Physik Journal</i>, <i>1</i>(12),
    41–48.
  bibtex: '@article{Meier_Koch_2002, title={Optodynamik}, volume={1}, number={12},
    journal={Physik Journal}, publisher={WILEY-VCH}, author={Meier, Torsten and Koch,
    S.W.}, year={2002}, pages={41–48} }'
  chicago: 'Meier, Torsten, and S.W. Koch. “Optodynamik.” <i>Physik Journal</i> 1,
    no. 12 (2002): 41–48.'
  ieee: T. Meier and S. W. Koch, “Optodynamik,” <i>Physik Journal</i>, vol. 1, no.
    12, pp. 41–48, 2002.
  mla: Meier, Torsten, and S. W. Koch. “Optodynamik.” <i>Physik Journal</i>, vol.
    1, no. 12, WILEY-VCH, 2002, pp. 41–48.
  short: T. Meier, S.W. Koch, Physik Journal 1 (2002) 41–48.
date_created: 2023-04-02T13:54:57Z
date_updated: 2023-05-01T13:28:14Z
department:
- _id: '293'
extern: '1'
intvolume: '         1'
issue: '12'
language:
- iso: eng
main_file_link:
- open_access: '1'
  url: https://www.pro-physik.de/restricted-files/116051
oa: '1'
page: 41-48
publication: Physik Journal
publication_status: published
publisher: WILEY-VCH
status: public
title: Optodynamik
type: journal_article
user_id: '49063'
volume: 1
year: '2002'
...
---
_id: '44535'
author:
- first_name: Igor
  full_name: Burban, Igor
  id: '72064'
  last_name: Burban
- first_name: Yu.
  full_name: Drozd, Yu.
  last_name: Drozd
citation:
  ama: 'Burban I, Drozd Yu. Derived categories and matrix problems. In: <i> Ukrainian
    Mathematical Congress 2001. Algebraic Structures and Their Applications. Proceedings
    of the Third International Algebraic Conference Held in Framework of the Ukrainian
    Mathematical Congress</i>. Instytut Matematyky NAN Ukrainy; 2002:201-211.'
  apa: Burban, I., &#38; Drozd, Yu. (2002). Derived categories and matrix problems.
    <i> Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications.
    Proceedings of the Third International Algebraic Conference Held in Framework
    of the Ukrainian Mathematical Congress</i>, 201–211.
  bibtex: '@inproceedings{Burban_Drozd_2002, place={Kyiv}, title={Derived categories
    and matrix problems}, booktitle={ Ukrainian mathematical congress 2001. Algebraic
    structures and their applications. Proceedings of the third international algebraic
    conference held in framework of the Ukrainian mathematical congress}, publisher={Instytut
    Matematyky NAN Ukrainy}, author={Burban, Igor and Drozd, Yu.}, year={2002}, pages={201–211}
    }'
  chicago: 'Burban, Igor, and Yu. Drozd. “Derived Categories and Matrix Problems.”
    In <i> Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications.
    Proceedings of the Third International Algebraic Conference Held in Framework
    of the Ukrainian Mathematical Congress</i>, 201–11. Kyiv: Instytut Matematyky
    NAN Ukrainy, 2002.'
  ieee: I. Burban and Yu. Drozd, “Derived categories and matrix problems,” in <i>
    Ukrainian mathematical congress 2001. Algebraic structures and their applications.
    Proceedings of the third international algebraic conference held in framework
    of the Ukrainian mathematical congress</i>, Kiev, Ukraine, 2002, pp. 201–211.
  mla: Burban, Igor, and Yu. Drozd. “Derived Categories and Matrix Problems.” <i>
    Ukrainian Mathematical Congress 2001. Algebraic Structures and Their Applications.
    Proceedings of the Third International Algebraic Conference Held in Framework
    of the Ukrainian Mathematical Congress</i>, Instytut Matematyky NAN Ukrainy, 2002,
    pp. 201–11.
  short: 'I. Burban, Yu. Drozd, in:  Ukrainian Mathematical Congress 2001. Algebraic
    Structures and Their Applications. Proceedings of the Third International Algebraic
    Conference Held in Framework of the Ukrainian Mathematical Congress, Instytut
    Matematyky NAN Ukrainy, Kyiv, 2002, pp. 201–211.'
conference:
  end_date: 2001-07-28
  location: Kiev, Ukraine
  name: Proceedings of the third international algebraic conference held in framework
    of the Ukrainian mathematical congress
  start_date: 2001-07-28
date_created: 2023-05-07T00:46:02Z
date_updated: 2023-05-07T01:37:56Z
department:
- _id: '602'
extern: '1'
language:
- iso: eng
page: 201-211
place: Kyiv
publication: ' Ukrainian mathematical congress 2001. Algebraic structures and their
  applications. Proceedings of the third international algebraic conference held in
  framework of the Ukrainian mathematical congress'
publication_status: published
publisher: Instytut Matematyky NAN Ukrainy
status: public
title: Derived categories and matrix problems
type: conference
user_id: '49063'
year: '2002'
...