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No.99CH37029)","title":"Negative differential resistance in ultrashort bulk MOSFETs","doi":"10.1109/iecon.1999.822164","date_updated":"2023-03-21T09:59:36Z","publisher":"IEEE","date_created":"2023-01-25T09:11:30Z","author":[{"first_name":"G.","full_name":"Wirth, G.","last_name":"Wirth"},{"first_name":"Ulrich","id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann"},{"full_name":"Horstmann, J.T.","last_name":"Horstmann","first_name":"J.T."},{"full_name":"Goser, K.","last_name":"Goser","first_name":"K."}],"year":"2003","citation":{"apa":"Wirth, G., Hilleringmann, U., Horstmann, J. T., &#38; Goser, K. (2003). Negative differential resistance in ultrashort bulk MOSFETs. <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. <a href=\"https://doi.org/10.1109/iecon.1999.822164\">https://doi.org/10.1109/iecon.1999.822164</a>","bibtex":"@inproceedings{Wirth_Hilleringmann_Horstmann_Goser_2003, title={Negative differential resistance in ultrashort bulk MOSFETs}, DOI={<a href=\"https://doi.org/10.1109/iecon.1999.822164\">10.1109/iecon.1999.822164</a>}, booktitle={IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)}, publisher={IEEE}, author={Wirth, G. and Hilleringmann, Ulrich and Horstmann, J.T. and Goser, K.}, year={2003} }","mla":"Wirth, G., et al. “Negative Differential Resistance in Ultrashort Bulk MOSFETs.” <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>, IEEE, 2003, doi:<a href=\"https://doi.org/10.1109/iecon.1999.822164\">10.1109/iecon.1999.822164</a>.","short":"G. Wirth, U. Hilleringmann, J.T. Horstmann, K. Goser, in: IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003.","chicago":"Wirth, G., Ulrich Hilleringmann, J.T. Horstmann, and K. Goser. “Negative Differential Resistance in Ultrashort Bulk MOSFETs.” In <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. IEEE, 2003. <a href=\"https://doi.org/10.1109/iecon.1999.822164\">https://doi.org/10.1109/iecon.1999.822164</a>.","ieee":"G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Negative differential resistance in ultrashort bulk MOSFETs,” 2003, doi: <a href=\"https://doi.org/10.1109/iecon.1999.822164\">10.1109/iecon.1999.822164</a>.","ama":"Wirth G, Hilleringmann U, Horstmann JT, Goser K. Negative differential resistance in ultrashort bulk MOSFETs. In: <i>IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029)</i>. IEEE; 2003. doi:<a href=\"https://doi.org/10.1109/iecon.1999.822164\">10.1109/iecon.1999.822164</a>"},"publication_status":"published"},{"volume":"67-68","date_created":"2023-01-25T08:39:40Z","author":[{"last_name":"Pannemann","full_name":"Pannemann, Ch.","first_name":"Ch."},{"last_name":"Diekmann","full_name":"Diekmann, T.","first_name":"T."},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"}],"publisher":"Elsevier BV","date_updated":"2023-03-21T10:04:43Z","doi":"10.1016/s0167-9317(03)00146-1","title":"Nanometer scale organic thin film transistors with Pentacene","publication_identifier":{"issn":["0167-9317"]},"publication_status":"published","page":"845-852","citation":{"apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2003). Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>, <i>67–68</i>, 845–852. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>","short":"Ch. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering 67–68 (2003) 845–852.","mla":"Pannemann, Ch., et al. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i>, vol. 67–68, Elsevier BV, 2003, pp. 845–52, doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>.","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2003, title={Nanometer scale organic thin film transistors with Pentacene}, volume={67–68}, DOI={<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>}, journal={Microelectronic Engineering}, publisher={Elsevier BV}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2003}, pages={845–852} }","chicago":"Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Nanometer Scale Organic Thin Film Transistors with Pentacene.” <i>Microelectronic Engineering</i> 67–68 (2003): 845–52. <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">https://doi.org/10.1016/s0167-9317(03)00146-1</a>.","ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Nanometer scale organic thin film transistors with Pentacene,” <i>Microelectronic Engineering</i>, vol. 67–68, pp. 845–852, 2003, doi: <a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>.","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. Nanometer scale organic thin film transistors with Pentacene. <i>Microelectronic Engineering</i>. 2003;67-68:845-852. doi:<a href=\"https://doi.org/10.1016/s0167-9317(03)00146-1\">10.1016/s0167-9317(03)00146-1</a>"},"year":"2003","department":[{"_id":"59"}],"user_id":"20179","_id":"39851","language":[{"iso":"eng"}],"keyword":["Electrical and Electronic Engineering","Surfaces","Coatings and Films","Condensed Matter Physics","Atomic and Molecular Physics","and Optics","Electronic","Optical and Magnetic Materials"],"publication":"Microelectronic Engineering","type":"journal_article","status":"public"},{"language":[{"iso":"eng"}],"publication":"physica status solidi (b)","abstract":[{"lang":"eng","text":"A novel microscopic approach for computing nonlinear optical properties of semiconductor surfaces is outlined. The linear and nonlinear response of the Si(111)-(2×1) surface is studied using a combination of ab-initio band-structure theory and equation of motion technique. The usefulness of the method is shown by reproducing known excitonic effects in the linear differential reflectivity spectrum. To additionally demonstrate the applicability of the approach for the nonlinear regime, the nonlinear optical response in Stark effect configuration is examined."}],"publisher":"WILEY‐VCH Verlag","date_created":"2023-04-02T12:58:59Z","title":"Microscopic theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect of the Si(111)-(2x1) surface exciton","issue":"3","year":"2003","_id":"43287","department":[{"_id":"293"}],"user_id":"49063","extern":"1","type":"journal_article","status":"public","date_updated":"2023-04-02T12:59:02Z","volume":238,"author":[{"last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344","first_name":"Torsten"},{"last_name":"Reichelt","id":"138","full_name":"Reichelt, Matthias","first_name":"Matthias"},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."},{"last_name":"Rohlfing","full_name":"Rohlfing, M.","first_name":"M."}],"doi":"10.1002/pssb.200303180","main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.200303180"}],"publication_status":"published","page":"525-528","intvolume":"       238","citation":{"chicago":"Meier, Torsten, Matthias Reichelt, S.W. Koch, and M. Rohlfing. “Microscopic Theory for the Nonlinear Optical Response of Semiconductor Surfaces: Application to the Optical Stark Effect of the Si(111)-(2x1) Surface Exciton.” <i>Physica Status Solidi (b)</i> 238, no. 3 (2003): 525–28. <a href=\"https://doi.org/10.1002/pssb.200303180\">https://doi.org/10.1002/pssb.200303180</a>.","ieee":"T. Meier, M. Reichelt, S. W. Koch, and M. Rohlfing, “Microscopic theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect of the Si(111)-(2x1) surface exciton,” <i>physica status solidi (b)</i>, vol. 238, no. 3, pp. 525–528, 2003, doi: <a href=\"https://doi.org/10.1002/pssb.200303180\">10.1002/pssb.200303180</a>.","ama":"Meier T, Reichelt M, Koch SW, Rohlfing M. Microscopic theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect of the Si(111)-(2x1) surface exciton. <i>physica status solidi (b)</i>. 2003;238(3):525-528. doi:<a href=\"https://doi.org/10.1002/pssb.200303180\">10.1002/pssb.200303180</a>","bibtex":"@article{Meier_Reichelt_Koch_Rohlfing_2003, title={Microscopic theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect of the Si(111)-(2x1) surface exciton}, volume={238}, DOI={<a href=\"https://doi.org/10.1002/pssb.200303180\">10.1002/pssb.200303180</a>}, number={3}, journal={physica status solidi (b)}, publisher={WILEY‐VCH Verlag}, author={Meier, Torsten and Reichelt, Matthias and Koch, S.W. and Rohlfing, M.}, year={2003}, pages={525–528} }","mla":"Meier, Torsten, et al. “Microscopic Theory for the Nonlinear Optical Response of Semiconductor Surfaces: Application to the Optical Stark Effect of the Si(111)-(2x1) Surface Exciton.” <i>Physica Status Solidi (b)</i>, vol. 238, no. 3, WILEY‐VCH Verlag, 2003, pp. 525–28, doi:<a href=\"https://doi.org/10.1002/pssb.200303180\">10.1002/pssb.200303180</a>.","short":"T. Meier, M. Reichelt, S.W. Koch, M. Rohlfing, Physica Status Solidi (b) 238 (2003) 525–528.","apa":"Meier, T., Reichelt, M., Koch, S. W., &#38; Rohlfing, M. (2003). Microscopic theory for the nonlinear optical response of semiconductor surfaces: Application to the optical Stark effect of the Si(111)-(2x1) surface exciton. <i>Physica Status Solidi (b)</i>, <i>238</i>(3), 525–528. <a href=\"https://doi.org/10.1002/pssb.200303180\">https://doi.org/10.1002/pssb.200303180</a>"}},{"language":[{"iso":"eng"}],"publication":"physica status solidi (b)","abstract":[{"text":"Optical properties of a semiconductor quantum well in the vicinity of a two-dimensional photonic crystal are investigated. Due to the periodic spatial modulation of the dielectric environment the effective Coulomb interaction potential exhibits the periodicity of the photonic crystal. As a consequence, the excitonic binding energy varies periodically by up to 50% depending on the spatial position of the exciton relative to the structured dielectric. The self image charge effects result in a position dependent shift of the single-particle bandgap such that the spectral position of the absorption spectrum also develops the periodicity of the photonic surrounding.","lang":"eng"}],"date_created":"2023-04-02T12:56:11Z","publisher":"WILEY‐VCH Verlag","title":"Semiconductor excitons in photonic crystals","issue":"3","year":"2003","user_id":"49063","department":[{"_id":"293"}],"_id":"43286","extern":"1","type":"journal_article","status":"public","author":[{"first_name":"Torsten","full_name":"Meier, Torsten","id":"344","last_name":"Meier","orcid":"0000-0001-8864-2072"},{"first_name":"R.","last_name":"Eichmann","full_name":"Eichmann, R."},{"full_name":"Pasenow, B.","last_name":"Pasenow","first_name":"B."},{"first_name":"P.","full_name":"Thomas, P.","last_name":"Thomas"},{"first_name":"S.W.","full_name":"Koch, S.W.","last_name":"Koch"}],"volume":238,"date_updated":"2023-04-02T12:56:14Z","main_file_link":[{"url":"https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.200303159"}],"doi":"10.1002/pssb.200303159","publication_status":"published","citation":{"ama":"Meier T, Eichmann R, Pasenow B, Thomas P, Koch SW. Semiconductor excitons in photonic crystals. <i>physica status solidi (b)</i>. 2003;238(3):439-442. doi:<a href=\"https://doi.org/10.1002/pssb.200303159\">10.1002/pssb.200303159</a>","ieee":"T. Meier, R. Eichmann, B. Pasenow, P. Thomas, and S. W. Koch, “Semiconductor excitons in photonic crystals,” <i>physica status solidi (b)</i>, vol. 238, no. 3, pp. 439–442, 2003, doi: <a href=\"https://doi.org/10.1002/pssb.200303159\">10.1002/pssb.200303159</a>.","chicago":"Meier, Torsten, R. Eichmann, B. Pasenow, P. Thomas, and S.W. Koch. “Semiconductor Excitons in Photonic Crystals.” <i>Physica Status Solidi (b)</i> 238, no. 3 (2003): 439–42. <a href=\"https://doi.org/10.1002/pssb.200303159\">https://doi.org/10.1002/pssb.200303159</a>.","apa":"Meier, T., Eichmann, R., Pasenow, B., Thomas, P., &#38; Koch, S. W. (2003). Semiconductor excitons in photonic crystals. <i>Physica Status Solidi (b)</i>, <i>238</i>(3), 439–442. <a href=\"https://doi.org/10.1002/pssb.200303159\">https://doi.org/10.1002/pssb.200303159</a>","bibtex":"@article{Meier_Eichmann_Pasenow_Thomas_Koch_2003, title={Semiconductor excitons in photonic crystals}, volume={238}, DOI={<a href=\"https://doi.org/10.1002/pssb.200303159\">10.1002/pssb.200303159</a>}, number={3}, journal={physica status solidi (b)}, publisher={WILEY‐VCH Verlag}, author={Meier, Torsten and Eichmann, R. and Pasenow, B. and Thomas, P. and Koch, S.W.}, year={2003}, pages={439–442} }","mla":"Meier, Torsten, et al. “Semiconductor Excitons in Photonic Crystals.” <i>Physica Status Solidi (b)</i>, vol. 238, no. 3, WILEY‐VCH Verlag, 2003, pp. 439–42, doi:<a href=\"https://doi.org/10.1002/pssb.200303159\">10.1002/pssb.200303159</a>.","short":"T. Meier, R. Eichmann, B. Pasenow, P. Thomas, S.W. Koch, Physica Status Solidi (b) 238 (2003) 439–442."},"intvolume":"       238","page":"439-442"},{"issue":"3","year":"2003","date_created":"2023-04-02T12:39:24Z","publisher":"American Institute of Physics","title":"Semiconductor absorption in photonic crystals","publication":"Applied Physics Letters","abstract":[{"text":"Absorption spectra of semiconductor structures in photonic crystal environments are investigated numerically. It is shown that the periodic dielectric structuring changes the local optical and Coulomb interaction properties of semiconductor electron–hole excitations. The structurally induced modifications offer the possibility to design important aspects of the optoelectronic semiconductor properties.","lang":"eng"}],"language":[{"iso":"eng"}],"publication_status":"published","citation":{"chicago":"Eichmann, R., B. Pasenow, Torsten Meier, T. Stroucken, P. Thomas, and S.W. Koch. “Semiconductor Absorption in Photonic Crystals.” <i>Applied Physics Letters</i> 82, no. 3 (2003): 355–57. <a href=\"https://doi.org/10.1063/1.1537455\">https://doi.org/10.1063/1.1537455</a>.","ieee":"R. Eichmann, B. Pasenow, T. Meier, T. Stroucken, P. Thomas, and S. W. Koch, “Semiconductor absorption in photonic crystals,” <i>Applied Physics Letters</i>, vol. 82, no. 3, pp. 355–357, 2003, doi: <a href=\"https://doi.org/10.1063/1.1537455\">10.1063/1.1537455</a>.","ama":"Eichmann R, Pasenow B, Meier T, Stroucken T, Thomas P, Koch SW. Semiconductor absorption in photonic crystals. <i>Applied Physics Letters</i>. 2003;82(3):355-357. doi:<a href=\"https://doi.org/10.1063/1.1537455\">10.1063/1.1537455</a>","bibtex":"@article{Eichmann_Pasenow_Meier_Stroucken_Thomas_Koch_2003, title={Semiconductor absorption in photonic crystals}, volume={82}, DOI={<a href=\"https://doi.org/10.1063/1.1537455\">10.1063/1.1537455</a>}, number={3}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Eichmann, R. and Pasenow, B. and Meier, Torsten and Stroucken, T. and Thomas, P. and Koch, S.W.}, year={2003}, pages={355–357} }","mla":"Eichmann, R., et al. “Semiconductor Absorption in Photonic Crystals.” <i>Applied Physics Letters</i>, vol. 82, no. 3, American Institute of Physics, 2003, pp. 355–57, doi:<a href=\"https://doi.org/10.1063/1.1537455\">10.1063/1.1537455</a>.","short":"R. Eichmann, B. Pasenow, T. Meier, T. Stroucken, P. Thomas, S.W. Koch, Applied Physics Letters 82 (2003) 355–357.","apa":"Eichmann, R., Pasenow, B., Meier, T., Stroucken, T., Thomas, P., &#38; Koch, S. W. (2003). Semiconductor absorption in photonic crystals. <i>Applied Physics Letters</i>, <i>82</i>(3), 355–357. <a href=\"https://doi.org/10.1063/1.1537455\">https://doi.org/10.1063/1.1537455</a>"},"intvolume":"        82","page":"355-357","author":[{"last_name":"Eichmann","full_name":"Eichmann, R.","first_name":"R."},{"first_name":"B.","last_name":"Pasenow","full_name":"Pasenow, B."},{"orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"full_name":"Stroucken, T.","last_name":"Stroucken","first_name":"T."},{"full_name":"Thomas, P.","last_name":"Thomas","first_name":"P."},{"first_name":"S.W.","last_name":"Koch","full_name":"Koch, S.W."}],"volume":82,"date_updated":"2023-04-02T12:39:26Z","main_file_link":[{"url":"https://aip.scitation.org/doi/abs/10.1063/1.1537455"}],"doi":"10.1063/1.1537455","type":"journal_article","status":"public","user_id":"49063","department":[{"_id":"293"}],"_id":"43283","extern":"1"},{"intvolume":"         2","page":"53-59","citation":{"ieee":"T. Meier and P. Thomas, “Echos in Festkörpern,” <i>Physik Journal</i>, vol. 2, no. 3, pp. 53–59, 2003.","chicago":"Meier, Torsten, and P. Thomas. “Echos in Festkörpern.” <i>Physik Journal</i> 2, no. 3 (2003): 53–59.","ama":"Meier T, Thomas P. Echos in Festkörpern. <i>Physik Journal</i>. 2003;2(3):53-59.","apa":"Meier, T., &#38; Thomas, P. (2003). Echos in Festkörpern. <i>Physik Journal</i>, <i>2</i>(3), 53–59.","mla":"Meier, Torsten, and P. Thomas. “Echos in Festkörpern.” <i>Physik Journal</i>, vol. 2, no. 3, 2003, pp. 53–59.","bibtex":"@article{Meier_Thomas_2003, title={Echos in Festkörpern}, volume={2}, number={3}, journal={Physik Journal}, author={Meier, Torsten and Thomas, P.}, year={2003}, pages={53–59} }","short":"T. Meier, P. Thomas, Physik Journal 2 (2003) 53–59."},"year":"2003","issue":"3","publication_status":"published","main_file_link":[{"open_access":"1","url":"https://www.pro-physik.de/restricted-files/116796"}],"title":"Echos in Festkörpern","volume":2,"date_created":"2023-04-02T12:43:19Z","author":[{"first_name":"Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","full_name":"Meier, Torsten"},{"last_name":"Thomas","full_name":"Thomas, P.","first_name":"P."}],"oa":"1","date_updated":"2023-04-02T12:43:22Z","status":"public","publication":"Physik Journal","type":"journal_article","extern":"1","language":[{"iso":"eng"}],"department":[{"_id":"293"}],"user_id":"49063","_id":"43285"},{"place":"Leipzig","year":"2003","page":"151-168","citation":{"ama":"Schroeter-Wittke H. Mission als Ver-Fahren. Praktisch-theologische Anmerkungen zu einer performativen Religionspädagogik. In: Böhme M, Ratzmann W, Ziemer J, eds. <i>Mission Als Dialog. Zur Kommunikation Des Evangeliums Heute</i>. ; 2003:151-168.","ieee":"H. Schroeter-Wittke, “Mission als Ver-Fahren. Praktisch-theologische Anmerkungen zu einer performativen Religionspädagogik,” in <i>Mission als Dialog. Zur Kommunikation des Evangeliums heute</i>, M. Böhme, W. Ratzmann, and J. Ziemer, Eds. Leipzig, 2003, pp. 151–168.","chicago":"Schroeter-Wittke, Harald. “Mission Als Ver-Fahren. Praktisch-Theologische Anmerkungen Zu Einer Performativen Religionspädagogik.” In <i>Mission Als Dialog. Zur Kommunikation Des Evangeliums Heute</i>, edited by Michael Böhme, Wolfgang Ratzmann, and Jürgen  Ziemer, 151–68. Leipzig, 2003.","apa":"Schroeter-Wittke, H. (2003). Mission als Ver-Fahren. Praktisch-theologische Anmerkungen zu einer performativen Religionspädagogik. In M. Böhme, W. Ratzmann, &#38; J. Ziemer (Eds.), <i>Mission als Dialog. Zur Kommunikation des Evangeliums heute</i> (pp. 151–168).","short":"H. Schroeter-Wittke, in: M. Böhme, W. Ratzmann, J. Ziemer (Eds.), Mission Als Dialog. Zur Kommunikation Des Evangeliums Heute, Leipzig, 2003, pp. 151–168.","mla":"Schroeter-Wittke, Harald. “Mission Als Ver-Fahren. Praktisch-Theologische Anmerkungen Zu Einer Performativen Religionspädagogik.” <i>Mission Als Dialog. Zur Kommunikation Des Evangeliums Heute</i>, edited by Michael Böhme et al., 2003, pp. 151–68.","bibtex":"@inbook{Schroeter-Wittke_2003, place={Leipzig}, title={Mission als Ver-Fahren. Praktisch-theologische Anmerkungen zu einer performativen Religionspädagogik}, booktitle={Mission als Dialog. Zur Kommunikation des Evangeliums heute}, author={Schroeter-Wittke, Harald}, editor={Böhme, Michael and Ratzmann, Wolfgang and Ziemer, Jürgen }, year={2003}, pages={151–168} }"},"title":"Mission als Ver-Fahren. 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