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Der Deutsche Evangelische Kirchentag in den 60er und 70er Jahren - eine soziale Bewegung? <i>Epd-Dokumentation</i>, <i>50</i>, 26–28."},"publication":"epd-Dokumentation","issue":"50"},{"article_number":"JTuC92","main_file_link":[{"url":"https://opg.optica.org/abstract.cfm?uri=qels-2005-JTuC92"}],"language":[{"iso":"eng"}],"title":"Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range","year":"2005","publication_identifier":{"isbn":["1-55752-770-9"]},"author":[{"full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","first_name":"Torsten","id":"344"},{"last_name":"Schlichenmaier","first_name":"C.","full_name":"Schlichenmaier, C."},{"first_name":"A.","last_name":"Thränhardt","full_name":"Thränhardt, A."},{"first_name":"H.","last_name":"Grüning","full_name":"Grüning, H."},{"full_name":"Klar, Peter J.","first_name":"Peter J.","last_name":"Klar"},{"full_name":"Heimbrodt, Wolfram","last_name":"Heimbrodt","first_name":"Wolfram"},{"full_name":"Koch, S.W.","first_name":"S.W.","last_name":"Koch"},{"full_name":"Chow, Weng W.","first_name":"Weng W.","last_name":"Chow"},{"last_name":"Hader","first_name":"J.","full_name":"Hader, J."},{"last_name":"Moloney","first_name":"Jerome V.","full_name":"Moloney, Jerome V."}],"publication_status":"published","date_updated":"2023-04-24T06:11:49Z","date_created":"2023-04-24T06:11:47Z","type":"conference","department":[{"_id":"293"}],"publication":" Quantum Electronics and Laser Science Conference","extern":"1","abstract":[{"lang":"eng","text":"Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1−x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5μm range."}],"_id":"44121","publisher":"Optical Society of America","user_id":"49063","status":"public","conference":{"location":"Baltimore, Maryland United States","name":"Quantum Electronics and Laser Science Conference 2005","start_date":"2005-05-22","end_date":"2005-05-27"},"citation":{"chicago":"Meier, Torsten, C. Schlichenmaier, A. Thränhardt, H. Grüning, Peter J. Klar, Wolfram Heimbrodt, S.W. Koch, Weng W. Chow, J. Hader, and Jerome V. Moloney. “Analysis of Dilute Nitride Semiconductor Laser Gain Materials in the 1.3-1.5/Spl Mu/m Range.” In <i> Quantum Electronics and Laser Science Conference</i>. Optical Society of America, 2005.","short":"T. Meier, C. Schlichenmaier, A. Thränhardt, H. Grüning, P.J. Klar, W. Heimbrodt, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, in:  Quantum Electronics and Laser Science Conference, Optical Society of America, 2005.","ieee":"T. Meier <i>et al.</i>, “Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range,” presented at the Quantum Electronics and Laser Science Conference 2005, Baltimore, Maryland United States, 2005.","apa":"Meier, T., Schlichenmaier, C., Thränhardt, A., Grüning, H., Klar, P. J., Heimbrodt, W., Koch, S. W., Chow, W. W., Hader, J., &#38; Moloney, J. V. (2005). Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range. <i> Quantum Electronics and Laser Science Conference</i>, Article JTuC92. Quantum Electronics and Laser Science Conference 2005, Baltimore, Maryland United States.","bibtex":"@inproceedings{Meier_Schlichenmaier_Thränhardt_Grüning_Klar_Heimbrodt_Koch_Chow_Hader_Moloney_2005, title={Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range}, number={JTuC92}, booktitle={ Quantum Electronics and Laser Science Conference}, publisher={Optical Society of America}, author={Meier, Torsten and Schlichenmaier, C. and Thränhardt, A. and Grüning, H. and Klar, Peter J. and Heimbrodt, Wolfram and Koch, S.W. and Chow, Weng W. and Hader, J. and Moloney, Jerome V.}, year={2005} }","ama":"Meier T, Schlichenmaier C, Thränhardt A, et al. Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5/spl mu/m range. In: <i> Quantum Electronics and Laser Science Conference</i>. Optical Society of America; 2005.","mla":"Meier, Torsten, et al. “Analysis of Dilute Nitride Semiconductor Laser Gain Materials in the 1.3-1.5/Spl Mu/m Range.” <i> Quantum Electronics and Laser Science Conference</i>, JTuC92, Optical Society of America, 2005."}},{"status":"public","volume":71,"user_id":"49063","_id":"23501","citation":{"chicago":"Hantke, K., J. D. Heber, C. Schlichenmaier, A. Thränhardt, Torsten Meier, B. Kunert, K. Volz, W. Stolz, S. W. Koch, and W. W. Rühle. “Time-Resolved Photoluminescence of Type-I and Type-II  (GaIn) As/Ga (NAs)  Heterostructures.” <i>Physical Review B</i> 71, no. 16 (2005). <a href=\"https://doi.org/10.1103/physrevb.71.165320\">https://doi.org/10.1103/physrevb.71.165320</a>.","short":"K. Hantke, J.D. Heber, C. Schlichenmaier, A. Thränhardt, T. Meier, B. Kunert, K. Volz, W. Stolz, S.W. Koch, W.W. Rühle, Physical Review B 71 (2005).","apa":"Hantke, K., Heber, J. D., Schlichenmaier, C., Thränhardt, A., Meier, T., Kunert, B., Volz, K., Stolz, W., Koch, S. W., &#38; Rühle, W. W. (2005). Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures. <i>Physical Review B</i>, <i>71</i>(16), Article 165320. <a href=\"https://doi.org/10.1103/physrevb.71.165320\">https://doi.org/10.1103/physrevb.71.165320</a>","ieee":"K. Hantke <i>et al.</i>, “Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures,” <i>Physical Review B</i>, vol. 71, no. 16, Art. no. 165320, 2005, doi: <a href=\"https://doi.org/10.1103/physrevb.71.165320\">10.1103/physrevb.71.165320</a>.","ama":"Hantke K, Heber JD, Schlichenmaier C, et al. Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures. <i>Physical Review B</i>. 2005;71(16). doi:<a href=\"https://doi.org/10.1103/physrevb.71.165320\">10.1103/physrevb.71.165320</a>","bibtex":"@article{Hantke_Heber_Schlichenmaier_Thränhardt_Meier_Kunert_Volz_Stolz_Koch_Rühle_2005, title={Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures}, volume={71}, DOI={<a href=\"https://doi.org/10.1103/physrevb.71.165320\">10.1103/physrevb.71.165320</a>}, number={16165320}, journal={Physical Review B}, author={Hantke, K. and Heber, J. D. and Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Kunert, B. and Volz, K. and Stolz, W. and Koch, S. W. and Rühle, W. W.}, year={2005} }","mla":"Hantke, K., et al. “Time-Resolved Photoluminescence of Type-I and Type-II  (GaIn) As/Ga (NAs)  Heterostructures.” <i>Physical Review B</i>, vol. 71, no. 16, 165320, 2005, doi:<a href=\"https://doi.org/10.1103/physrevb.71.165320\">10.1103/physrevb.71.165320</a>."},"intvolume":"        71","date_updated":"2023-04-24T06:13:15Z","publication_status":"published","author":[{"first_name":"K.","last_name":"Hantke","full_name":"Hantke, K."},{"full_name":"Heber, J. D.","last_name":"Heber","first_name":"J. D."},{"last_name":"Schlichenmaier","first_name":"C.","full_name":"Schlichenmaier, C."},{"full_name":"Thränhardt, A.","last_name":"Thränhardt","first_name":"A."},{"full_name":"Meier, Torsten","first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","id":"344"},{"last_name":"Kunert","first_name":"B.","full_name":"Kunert, B."},{"full_name":"Volz, K.","last_name":"Volz","first_name":"K."},{"last_name":"Stolz","first_name":"W.","full_name":"Stolz, W."},{"last_name":"Koch","first_name":"S. W.","full_name":"Koch, S. W."},{"full_name":"Rühle, W. W.","last_name":"Rühle","first_name":"W. W."}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"year":"2005","title":"Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures","doi":"10.1103/physrevb.71.165320","language":[{"iso":"eng"}],"article_number":"165320","abstract":[{"lang":"eng","text":"A set of (Ga0.77In0.23)As/Ga(NxAs1−x) heterostructures is studied by time-resolved photoluminescence. Four samples with nitrogen concentrations from x=0.48% up to x=2.2% are investigated at different temperatures and with different excitation densities. The experiments suggest that the heterostructure band offset is type I for x=0.48% and type II for x=2.2%. The situation is more complex for x=0.72% and x=1.25%, since these samples are close to the transition from type I to type II. The experimental findings are analyzed using a detailed microscopic theory. Numerical calculations describe the measured data well. In particular, the interpretation of the experimental results concerning the band alignment is confirmed by the theoretical analysis."}],"extern":"1","publication":"Physical Review B","issue":"16","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"type":"journal_article","date_created":"2021-08-24T09:23:59Z"},{"citation":{"ama":"Reichelt M, Pasenow B, Meier T, Stroucken T, Koch SW. Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures. <i>Physical Review B</i>. 2005;71(3). doi:<a href=\"https://doi.org/10.1103/physrevb.71.035346\">10.1103/physrevb.71.035346</a>","bibtex":"@article{Reichelt_Pasenow_Meier_Stroucken_Koch_2005, title={Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures}, volume={71}, DOI={<a href=\"https://doi.org/10.1103/physrevb.71.035346\">10.1103/physrevb.71.035346</a>}, number={3035346}, journal={Physical Review B}, author={Reichelt, Matthias and Pasenow, B. and Meier, Torsten and Stroucken, T. and Koch, S. W.}, year={2005} }","mla":"Reichelt, Matthias, et al. “Spatially Inhomogeneous Optical Gain in Semiconductor Photonic-Crystal Structures.” <i>Physical Review B</i>, vol. 71, no. 3, 035346, 2005, doi:<a href=\"https://doi.org/10.1103/physrevb.71.035346\">10.1103/physrevb.71.035346</a>.","chicago":"Reichelt, Matthias, B. Pasenow, Torsten Meier, T. Stroucken, and S. W. Koch. “Spatially Inhomogeneous Optical Gain in Semiconductor Photonic-Crystal Structures.” <i>Physical Review B</i> 71, no. 3 (2005). <a href=\"https://doi.org/10.1103/physrevb.71.035346\">https://doi.org/10.1103/physrevb.71.035346</a>.","short":"M. Reichelt, B. Pasenow, T. Meier, T. Stroucken, S.W. Koch, Physical Review B 71 (2005).","apa":"Reichelt, M., Pasenow, B., Meier, T., Stroucken, T., &#38; Koch, S. W. (2005). Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures. <i>Physical Review B</i>, <i>71</i>(3), Article 035346. <a href=\"https://doi.org/10.1103/physrevb.71.035346\">https://doi.org/10.1103/physrevb.71.035346</a>","ieee":"M. Reichelt, B. Pasenow, T. Meier, T. Stroucken, and S. W. Koch, “Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures,” <i>Physical Review B</i>, vol. 71, no. 3, Art. no. 035346, 2005, doi: <a href=\"https://doi.org/10.1103/physrevb.71.035346\">10.1103/physrevb.71.035346</a>."},"status":"public","_id":"23496","user_id":"49063","volume":71,"issue":"3","publication":"Physical Review B","abstract":[{"text":"The optical and electronic properties of semiconductor heterostructures in the vicinity of photonic crystals are discussed. The theoretical approach provides a self-consistent solution of the dynamics of the electromagnetic field and the material excitations. Due to the influence of the structured dielectric environment on the Coulomb interaction, the exciton resonances and the quasiequilibrium carrier densities in the spatially homogeneous semiconductor become space dependent. It is demonstrated that these inhomogeneities lead to distinct modifications of the optical absorption and gain spectra. As an application, numerically calculated density-dependent optical spectra are analyzed for an array of semiconductor quantum wires which are close to a two-dimensional photonic crystal. The spatial inhomogeneities result in novel excitonic absorption features and modification of the optical gain in these structures.","lang":"eng"}],"extern":"1","date_created":"2021-08-24T09:19:26Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}],"year":"2005","title":"Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures","author":[{"id":"138","last_name":"Reichelt","first_name":"Matthias","full_name":"Reichelt, Matthias"},{"full_name":"Pasenow, B.","first_name":"B.","last_name":"Pasenow"},{"id":"344","full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"full_name":"Stroucken, T.","last_name":"Stroucken","first_name":"T."},{"full_name":"Koch, S. W.","first_name":"S. W.","last_name":"Koch"}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"date_updated":"2023-04-24T06:15:10Z","publication_status":"published","intvolume":"        71","article_number":"035346","language":[{"iso":"eng"}],"doi":"10.1103/physrevb.71.035346"},{"department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"}],"type":"journal_article","date_created":"2021-08-24T09:20:43Z","abstract":[{"lang":"eng","text":"The ultrafast dynamics of photoexcitations at silicon surfaces is investigated using a surface-sensitive purely optical technique. In the experiments, the diffracted second harmonic generated by sequences of ultrashort laser pulses is detected as a function of the time delay between the pulses. It is demonstrated that this five-wave-mixing technique can be used to measure the temporal evolution of the optical polarization and the photoexcited populations at the surface. The experimental results can be reproduced by numerical solutions of optical Bloch equations. The theoretical analysis allows one to investigate which dephasing times and relaxation processes are compatible with experiment. Furthermore, it is outlined how one can describe optical nonlinearities at surfaces using a microscopic theory within the framework of semiconductor Bloch equations."}],"extern":"1","issue":"8","publication":"Journal of Physics: Condensed Matter","doi":"10.1088/0953-8984/17/8/003","language":[{"iso":"eng"}],"intvolume":"        17","date_updated":"2023-04-24T06:14:12Z","publication_status":"published","author":[{"id":"344","full_name":"Meier, Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","first_name":"Torsten"},{"full_name":"Reichelt, Matthias","last_name":"Reichelt","first_name":"Matthias","id":"138"},{"first_name":"S W","last_name":"Koch","full_name":"Koch, S W"},{"first_name":"U","last_name":"Höfer","full_name":"Höfer, U"}],"publication_identifier":{"issn":["0953-8984","1361-648X"]},"year":"2005","title":"Femtosecond time-resolved five-wave mixing at silicon surfaces","citation":{"ieee":"T. Meier, M. Reichelt, S. W. Koch, and U. Höfer, “Femtosecond time-resolved five-wave mixing at silicon surfaces,” <i>Journal of Physics: Condensed Matter</i>, vol. 17, no. 8, pp. S221–S244, 2005, doi: <a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">10.1088/0953-8984/17/8/003</a>.","apa":"Meier, T., Reichelt, M., Koch, S. W., &#38; Höfer, U. (2005). Femtosecond time-resolved five-wave mixing at silicon surfaces. <i>Journal of Physics: Condensed Matter</i>, <i>17</i>(8), S221–S244. <a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">https://doi.org/10.1088/0953-8984/17/8/003</a>","short":"T. Meier, M. Reichelt, S.W. Koch, U. Höfer, Journal of Physics: Condensed Matter 17 (2005) S221–S244.","chicago":"Meier, Torsten, Matthias Reichelt, S W Koch, and U Höfer. “Femtosecond Time-Resolved Five-Wave Mixing at Silicon Surfaces.” <i>Journal of Physics: Condensed Matter</i> 17, no. 8 (2005): S221–44. <a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">https://doi.org/10.1088/0953-8984/17/8/003</a>.","mla":"Meier, Torsten, et al. “Femtosecond Time-Resolved Five-Wave Mixing at Silicon Surfaces.” <i>Journal of Physics: Condensed Matter</i>, vol. 17, no. 8, 2005, pp. S221–44, doi:<a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">10.1088/0953-8984/17/8/003</a>.","bibtex":"@article{Meier_Reichelt_Koch_Höfer_2005, title={Femtosecond time-resolved five-wave mixing at silicon surfaces}, volume={17}, DOI={<a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">10.1088/0953-8984/17/8/003</a>}, number={8}, journal={Journal of Physics: Condensed Matter}, author={Meier, Torsten and Reichelt, Matthias and Koch, S W and Höfer, U}, year={2005}, pages={S221–S244} }","ama":"Meier T, Reichelt M, Koch SW, Höfer U. Femtosecond time-resolved five-wave mixing at silicon surfaces. <i>Journal of Physics: Condensed Matter</i>. 2005;17(8):S221-S244. doi:<a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">10.1088/0953-8984/17/8/003</a>"},"volume":17,"user_id":"49063","_id":"23498","page":"S221-S244","status":"public"},{"doi":"10.1088/0953-8984/17/8/003","language":[{"iso":"eng"}],"intvolume":"        17","publication_status":"published","date_updated":"2023-04-24T06:14:11Z","author":[{"orcid":"0000-0001-8864-2072","last_name":"Meier","first_name":"Torsten","full_name":"Meier, Torsten","id":"344"},{"id":"138","full_name":"Reichelt, Matthias","first_name":"Matthias","last_name":"Reichelt"},{"last_name":"Koch","first_name":"S W","full_name":"Koch, S W"},{"last_name":"Höfer","first_name":"U","full_name":"Höfer, U"}],"publication_identifier":{"issn":["0953-8984","1361-648X"]},"title":"Femtosecond time-resolved five-wave mixing at silicon surfaces","year":"2005","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"type":"journal_article","date_created":"2021-08-24T09:21:43Z","extern":"1","abstract":[{"text":"The ultrafast dynamics of photoexcitations at silicon surfaces is investigated using a surface-sensitive purely optical technique. In the experiments, the diffracted second harmonic generated by sequences of ultrashort laser pulses is detected as a function of the time delay between the pulses. It is demonstrated that this five-wave-mixing technique can be used to measure the temporal evolution of the optical polarization and the photoexcited populations at the surface. The experimental results can be reproduced by numerical solutions of optical Bloch equations. The theoretical analysis allows one to investigate which dephasing times and relaxation processes are compatible with experiment. Furthermore, it is outlined how one can describe optical nonlinearities at surfaces using a microscopic theory within the framework of semiconductor Bloch equations.","lang":"eng"}],"issue":"8","publication":"Journal of Physics: Condensed Matter","volume":17,"user_id":"49063","_id":"23499","page":"S221-S244","status":"public","citation":{"ieee":"T. Meier, M. Reichelt, S. W. Koch, and U. Höfer, “Femtosecond time-resolved five-wave mixing at silicon surfaces,” <i>Journal of Physics: Condensed Matter</i>, vol. 17, no. 8, pp. S221–S244, 2005, doi: <a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">10.1088/0953-8984/17/8/003</a>.","apa":"Meier, T., Reichelt, M., Koch, S. W., &#38; Höfer, U. (2005). Femtosecond time-resolved five-wave mixing at silicon surfaces. <i>Journal of Physics: Condensed Matter</i>, <i>17</i>(8), S221–S244. <a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">https://doi.org/10.1088/0953-8984/17/8/003</a>","chicago":"Meier, Torsten, Matthias Reichelt, S W Koch, and U Höfer. “Femtosecond Time-Resolved Five-Wave Mixing at Silicon Surfaces.” <i>Journal of Physics: Condensed Matter</i> 17, no. 8 (2005): S221–44. <a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">https://doi.org/10.1088/0953-8984/17/8/003</a>.","short":"T. Meier, M. Reichelt, S.W. Koch, U. Höfer, Journal of Physics: Condensed Matter 17 (2005) S221–S244.","mla":"Meier, Torsten, et al. “Femtosecond Time-Resolved Five-Wave Mixing at Silicon Surfaces.” <i>Journal of Physics: Condensed Matter</i>, vol. 17, no. 8, 2005, pp. S221–44, doi:<a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">10.1088/0953-8984/17/8/003</a>.","bibtex":"@article{Meier_Reichelt_Koch_Höfer_2005, title={Femtosecond time-resolved five-wave mixing at silicon surfaces}, volume={17}, DOI={<a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">10.1088/0953-8984/17/8/003</a>}, number={8}, journal={Journal of Physics: Condensed Matter}, author={Meier, Torsten and Reichelt, Matthias and Koch, S W and Höfer, U}, year={2005}, pages={S221–S244} }","ama":"Meier T, Reichelt M, Koch SW, Höfer U. Femtosecond time-resolved five-wave mixing at silicon surfaces. <i>Journal of Physics: Condensed Matter</i>. 2005;17(8):S221-S244. doi:<a href=\"https://doi.org/10.1088/0953-8984/17/8/003\">10.1088/0953-8984/17/8/003</a>"}},{"department":[{"_id":"293"}],"type":"conference","date_created":"2023-05-01T13:25:43Z","extern":"1","citation":{"mla":"Meier, Torsten, et al. “Optical Properties of Semiconductor Photonic-Crystal Structures: Spatially-Inhomogeneous Excitonic Resonances and Optical Gain.” <i>2005 Annual Conference of the German Physical Society (DPG) during the World Year of Physics</i>, vol. 40, 2005.","ama":"Meier T, Reichelt M, Pasenow B, Stroucken T, Koch SW. Optical properties of semiconductor photonic-crystal structures: spatially-inhomogeneous excitonic resonances and optical gain. In: <i>2005 Annual Conference of the German Physical Society (DPG) during the World Year of Physics</i>. Vol 40. Verhandlungen der Deutschen Physikalischen Gesellschaft. ; 2005.","bibtex":"@inproceedings{Meier_Reichelt_Pasenow_Stroucken_Koch_2005, series={Verhandlungen der Deutschen Physikalischen Gesellschaft}, title={Optical properties of semiconductor photonic-crystal structures: spatially-inhomogeneous excitonic resonances and optical gain}, volume={40}, booktitle={2005 annual conference of the German Physical Society (DPG) during the World year of physics}, author={Meier, Torsten and Reichelt, Matthias and Pasenow, B. and Stroucken, T. and Koch, S.W.}, year={2005}, collection={Verhandlungen der Deutschen Physikalischen Gesellschaft} }","apa":"Meier, T., Reichelt, M., Pasenow, B., Stroucken, T., &#38; Koch, S. W. (2005). Optical properties of semiconductor photonic-crystal structures: spatially-inhomogeneous excitonic resonances and optical gain. <i>2005 Annual Conference of the German Physical Society (DPG) during the World Year of Physics</i>, <i>40</i>.","ieee":"T. Meier, M. Reichelt, B. Pasenow, T. Stroucken, and S. W. Koch, “Optical properties of semiconductor photonic-crystal structures: spatially-inhomogeneous excitonic resonances and optical gain,” in <i>2005 annual conference of the German Physical Society (DPG) during the World year of physics</i>, Berlin, Germany, 2005, vol. 40.","short":"T. Meier, M. Reichelt, B. Pasenow, T. Stroucken, S.W. Koch, in: 2005 Annual Conference of the German Physical Society (DPG) during the World Year of Physics, 2005.","chicago":"Meier, Torsten, Matthias Reichelt, B. Pasenow, T. Stroucken, and S.W. Koch. “Optical Properties of Semiconductor Photonic-Crystal Structures: Spatially-Inhomogeneous Excitonic Resonances and Optical Gain.” In <i>2005 Annual Conference of the German Physical Society (DPG) during the World Year of Physics</i>, Vol. 40. Verhandlungen Der Deutschen Physikalischen Gesellschaft, 2005."},"publication":"2005 annual conference of the German Physical Society (DPG) during the World year of physics","volume":40,"user_id":"49063","language":[{"iso":"eng"}],"_id":"44297","series_title":"Verhandlungen der Deutschen Physikalischen Gesellschaft","main_file_link":[{"url":"https://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/hl/session/37/contribution/2"}],"intvolume":"        40","date_updated":"2023-05-01T13:25:46Z","publication_status":"published","conference":{"location":"Berlin, Germany","start_date":"2005-03-04","name":"2005 annual conference of the German Physical Society (DPG) during the World year of physics","end_date":"2005-03-09"},"author":[{"id":"344","full_name":"Meier, Torsten","last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072"},{"id":"138","last_name":"Reichelt","first_name":"Matthias","full_name":"Reichelt, Matthias"},{"full_name":"Pasenow, B.","last_name":"Pasenow","first_name":"B."},{"full_name":"Stroucken, T.","first_name":"T.","last_name":"Stroucken"},{"full_name":"Koch, S.W.","last_name":"Koch","first_name":"S.W."}],"title":"Optical properties of semiconductor photonic-crystal structures: spatially-inhomogeneous excitonic resonances and optical gain","year":"2005","status":"public"}]