[{"type":"journal_article","status":"public","urn":"41826","user_id":"158","department":[{"_id":"15"}],"_id":"4182","file_date_updated":"2018-09-04T19:36:35Z","article_number":"042331","article_type":"original","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1050-2947","1094-1622"]},"citation":{"short":"A. Grodecka, P. Machnikowski, J. Förstner, Physical Review A 79 (2009).","bibtex":"@article{Grodecka_Machnikowski_Förstner_2009, title={Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots}, volume={79}, DOI={<a href=\"https://doi.org/10.1103/physreva.79.042331\">10.1103/physreva.79.042331</a>}, number={4042331}, journal={Physical Review A}, publisher={American Physical Society (APS)}, author={Grodecka, A. and Machnikowski, P. and Förstner, Jens}, year={2009} }","mla":"Grodecka, A., et al. “Indirect Spin Dephasing via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” <i>Physical Review A</i>, vol. 79, no. 4, 042331, American Physical Society (APS), 2009, doi:<a href=\"https://doi.org/10.1103/physreva.79.042331\">10.1103/physreva.79.042331</a>.","apa":"Grodecka, A., Machnikowski, P., &#38; Förstner, J. (2009). Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots. <i>Physical Review A</i>, <i>79</i>(4). <a href=\"https://doi.org/10.1103/physreva.79.042331\">https://doi.org/10.1103/physreva.79.042331</a>","ama":"Grodecka A, Machnikowski P, Förstner J. Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots. <i>Physical Review A</i>. 2009;79(4). doi:<a href=\"https://doi.org/10.1103/physreva.79.042331\">10.1103/physreva.79.042331</a>","chicago":"Grodecka, A., P. Machnikowski, and Jens Förstner. “Indirect Spin Dephasing via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” <i>Physical Review A</i> 79, no. 4 (2009). <a href=\"https://doi.org/10.1103/physreva.79.042331\">https://doi.org/10.1103/physreva.79.042331</a>.","ieee":"A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots,” <i>Physical Review A</i>, vol. 79, no. 4, 2009."},"intvolume":"        79","author":[{"full_name":"Grodecka, A.","last_name":"Grodecka","first_name":"A."},{"first_name":"P.","full_name":"Machnikowski, P.","last_name":"Machnikowski"},{"first_name":"Jens","id":"158","full_name":"Förstner, Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner"}],"volume":79,"oa":"1","date_updated":"2022-01-06T07:00:31Z","doi":"10.1103/physreva.79.042331","publication":"Physical Review A","file":[{"access_level":"open_access","file_name":"2009 Grodecka,Machnikowski,Förstner_Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots.pdf","file_id":"4183","file_size":192120,"creator":"hclaudia","date_created":"2018-08-28T09:33:22Z","date_updated":"2018-09-04T19:36:35Z","relation":"main_file","content_type":"application/pdf"}],"abstract":[{"lang":"eng","text":"We demonstrate that an optically driven spin of a carrier in a quantum dot undergoes indirect dephasing via\r\nconditional optically induced charge evolution even in the absence of any direct interaction between the spin\r\nand its environment. A generic model for the indirect dephasing with a three-component system with spin,\r\ncharge, and reservoir is proposed. This indirect decoherence channel is studied for the optical spin manipulation\r\nin a quantum dot with a microscopic description of the charge-phonon interaction taking into account its\r\nnon-Markovian nature."}],"language":[{"iso":"eng"}],"ddc":["530"],"keyword":["tet_topic_qd"],"issue":"4","year":"2009","date_created":"2018-08-28T09:32:32Z","publisher":"American Physical Society (APS)","title":"Indirect spin dephasing via charge-state decoherence in optical control schemes in quantum dots"},{"ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"Buried ion beam synthesized 3C-SiC layers were revealed to the surface of silicon wafers to provide lattice matched substrates for GaN thin film epitaxy. Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six- or four-fold crystal symmetry, respectively, were formed. GaN thin film growth was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing to the energy and momentum transfer of the ions – allows to deposit epitaxial thin films at particularly low growth temperatures where both the stable hexagonal and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga rich growth conditions seem to stabilize the formation of the cubic polytype. It is obvious from XTEM studies that the high density of crystal defects in the SiC layer is not transferred onto the growing GaN films and that the crystalline quality of GaN films improves with increasing film thickness. The influence of surface roughness and wettability, interfacial cavities and the nucleation of twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN thin films is discussed."}],"file":[{"success":1,"relation":"main_file","content_type":"application/pdf","file_size":828431,"file_id":"4193","access_level":"closed","file_name":"Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA-MBE on SiC-Si.pdf","date_updated":"2018-08-28T11:50:45Z","creator":"hclaudia","date_created":"2018-08-28T11:50:45Z"}],"publication":"Journal of Crystal Growth","title":"Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si","publisher":"Elsevier BV","date_created":"2018-08-28T11:50:05Z","year":"2009","issue":"6","article_type":"original","file_date_updated":"2018-08-28T11:50:45Z","_id":"4192","department":[{"_id":"15"}],"user_id":"55706","status":"public","type":"journal_article","doi":"10.1016/j.jcrysgro.2009.12.048","date_updated":"2022-01-06T07:00:32Z","volume":312,"author":[{"first_name":"M.","full_name":"Häberlen, M.","last_name":"Häberlen"},{"last_name":"Gerlach","full_name":"Gerlach, J.W.","first_name":"J.W."},{"last_name":"Murphy","full_name":"Murphy, B.","first_name":"B."},{"first_name":"Jörg","id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner"},{"last_name":"Stritzker","full_name":"Stritzker, B.","first_name":"B."}],"page":"762-769","intvolume":"       312","citation":{"apa":"Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., &#38; Stritzker, B. (2009). Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. <i>Journal of Crystal Growth</i>, <i>312</i>(6), 762–769. <a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">https://doi.org/10.1016/j.jcrysgro.2009.12.048</a>","bibtex":"@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si}, volume={312}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>}, number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009}, pages={762–769} }","short":"M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of Crystal Growth 312 (2009) 762–769.","mla":"Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” <i>Journal of Crystal Growth</i>, vol. 312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>.","ieee":"M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,” <i>Journal of Crystal Growth</i>, vol. 312, no. 6, pp. 762–769, 2009.","chicago":"Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker. “Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE on SiC/Si.” <i>Journal of Crystal Growth</i> 312, no. 6 (2009): 762–69. <a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">https://doi.org/10.1016/j.jcrysgro.2009.12.048</a>.","ama":"Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. <i>Journal of Crystal Growth</i>. 2009;312(6):762-769. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2009.12.048\">10.1016/j.jcrysgro.2009.12.048</a>"},"publication_identifier":{"issn":["0022-0248"]},"has_accepted_license":"1","publication_status":"published"},{"type":"journal_article","status":"public","_id":"4196","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"article_type":"original","file_date_updated":"2018-08-28T12:16:11Z","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1862-6351","1610-1642"]},"citation":{"short":"E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As, Physica Status Solidi (C) 7 (2009) 104–107.","bibtex":"@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>}, number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak, Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2009}, pages={104–107} }","mla":"Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” <i>Physica Status Solidi (C)</i>, vol. 7, no. 1, Wiley, 2009, pp. 104–07, doi:<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>.","apa":"Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., &#38; As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). <i>Physica Status Solidi (C)</i>, <i>7</i>(1), 104–107. <a href=\"https://doi.org/10.1002/pssc.200982615\">https://doi.org/10.1002/pssc.200982615</a>","ieee":"E. Tschumak <i>et al.</i>, “Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001),” <i>physica status solidi (c)</i>, vol. 7, no. 1, pp. 104–107, 2009.","chicago":"Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted 3C-SiC (001).” <i>Physica Status Solidi (C)</i> 7, no. 1 (2009): 104–7. <a href=\"https://doi.org/10.1002/pssc.200982615\">https://doi.org/10.1002/pssc.200982615</a>.","ama":"Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). <i>physica status solidi (c)</i>. 2009;7(1):104-107. doi:<a href=\"https://doi.org/10.1002/pssc.200982615\">10.1002/pssc.200982615</a>"},"intvolume":"         7","page":"104-107","date_updated":"2022-01-06T07:00:33Z","author":[{"first_name":"Elena","last_name":"Tschumak","full_name":"Tschumak, Elena"},{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"},{"first_name":"M.","last_name":"Bürger","full_name":"Bürger, M."},{"full_name":"Lischka, K.","last_name":"Lischka","first_name":"K."},{"last_name":"Nagasawa","full_name":"Nagasawa, H.","first_name":"H."},{"full_name":"Abe, M.","last_name":"Abe","first_name":"M."},{"first_name":"Donald","last_name":"As","full_name":"As, Donald"}],"volume":7,"doi":"10.1002/pssc.200982615","publication":"physica status solidi (c)","abstract":[{"text":"The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off heterojunction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD). HFETs with normally off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero interface.","lang":"eng"}],"file":[{"date_updated":"2018-08-28T12:16:11Z","creator":"hclaudia","date_created":"2018-08-28T12:16:11Z","file_size":213837,"file_name":"Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf","file_id":"4197","access_level":"closed","content_type":"application/pdf","success":1,"relation":"main_file"}],"ddc":["530"],"language":[{"iso":"eng"}],"issue":"1","year":"2009","publisher":"Wiley","date_created":"2018-08-28T12:15:20Z","title":"Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)"},{"doi":"10.1016/j.photonics.2009.11.002","date_updated":"2022-01-06T07:00:33Z","author":[{"full_name":"Üpping, J.","last_name":"Üpping","first_name":"J."},{"first_name":"P.T.","full_name":"Miclea, P.T.","last_name":"Miclea"},{"full_name":"Wehrspohn, R.B.","last_name":"Wehrspohn","first_name":"R.B."},{"first_name":"T.","last_name":"Baumgarten","full_name":"Baumgarten, T."},{"first_name":"Siegmund","last_name":"Greulich-Weber","full_name":"Greulich-Weber, Siegmund"}],"volume":8,"citation":{"ama":"Üpping J, Miclea PT, Wehrspohn RB, Baumgarten T, Greulich-Weber S. Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime. <i>Photonics and Nanostructures - Fundamentals and Applications</i>. 2009;8(2):102-106. doi:<a href=\"https://doi.org/10.1016/j.photonics.2009.11.002\">10.1016/j.photonics.2009.11.002</a>","ieee":"J. Üpping, P. T. Miclea, R. B. Wehrspohn, T. Baumgarten, and S. Greulich-Weber, “Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime,” <i>Photonics and Nanostructures - Fundamentals and Applications</i>, vol. 8, no. 2, pp. 102–106, 2009.","chicago":"Üpping, J., P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, and Siegmund Greulich-Weber. “Direction-Selective Optical Transmission of 3D Fcc Photonic Crystals in the Microwave Regime.” <i>Photonics and Nanostructures - Fundamentals and Applications</i> 8, no. 2 (2009): 102–6. <a href=\"https://doi.org/10.1016/j.photonics.2009.11.002\">https://doi.org/10.1016/j.photonics.2009.11.002</a>.","apa":"Üpping, J., Miclea, P. T., Wehrspohn, R. B., Baumgarten, T., &#38; Greulich-Weber, S. (2009). Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime. <i>Photonics and Nanostructures - Fundamentals and Applications</i>, <i>8</i>(2), 102–106. <a href=\"https://doi.org/10.1016/j.photonics.2009.11.002\">https://doi.org/10.1016/j.photonics.2009.11.002</a>","short":"J. Üpping, P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, S. Greulich-Weber, Photonics and Nanostructures - Fundamentals and Applications 8 (2009) 102–106.","mla":"Üpping, J., et al. “Direction-Selective Optical Transmission of 3D Fcc Photonic Crystals in the Microwave Regime.” <i>Photonics and Nanostructures - Fundamentals and Applications</i>, vol. 8, no. 2, Elsevier BV, 2009, pp. 102–06, doi:<a href=\"https://doi.org/10.1016/j.photonics.2009.11.002\">10.1016/j.photonics.2009.11.002</a>.","bibtex":"@article{Üpping_Miclea_Wehrspohn_Baumgarten_Greulich-Weber_2009, title={Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime}, volume={8}, DOI={<a href=\"https://doi.org/10.1016/j.photonics.2009.11.002\">10.1016/j.photonics.2009.11.002</a>}, number={2}, journal={Photonics and Nanostructures - Fundamentals and Applications}, publisher={Elsevier BV}, author={Üpping, J. and Miclea, P.T. and Wehrspohn, R.B. and Baumgarten, T. and Greulich-Weber, Siegmund}, year={2009}, pages={102–106} }"},"page":"102-106","intvolume":"         8","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1569-4410"]},"article_type":"original","file_date_updated":"2018-08-28T12:19:51Z","_id":"4198","user_id":"55706","department":[{"_id":"15"}],"status":"public","type":"journal_article","title":"Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime","publisher":"Elsevier BV","date_created":"2018-08-28T12:19:16Z","year":"2009","issue":"2","ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"Three-dimensional (3D) photonic crystal exhibit direction-selective transmission with respect to the center frequency of the stop gap. As a model system, the stop gap of a 3D fcc inverted-opal photonic crystal is studied in the microwave regime in detail using 3D polyamide models. The difference in the direction-selective transmittance between crystals grown in two different high symmetry directions is experimentally shown and compared to numerical simulations."}],"file":[{"file_size":310534,"file_id":"4199","file_name":"Direction-selective optical transmission of 3D fcc photonic crystals in the microwave regime.pdf","access_level":"closed","date_updated":"2018-08-28T12:19:51Z","date_created":"2018-08-28T12:19:51Z","creator":"hclaudia","success":1,"relation":"main_file","content_type":"application/pdf"}],"publication":"Photonics and Nanostructures - Fundamentals and Applications"},{"doi":"10.4028/www.scientific.net/msf.615-617.239","title":"Textile Solar Cells Based on SiC Microwires","volume":"615-617","author":[{"first_name":"Siegmund","last_name":"Greulich-Weber","full_name":"Greulich-Weber, Siegmund"},{"first_name":"M.","full_name":"Zöller, M.","last_name":"Zöller"},{"first_name":"B.","last_name":"Friedel","full_name":"Friedel, B."}],"date_created":"2018-08-28T13:00:44Z","publisher":"Trans Tech Publications","date_updated":"2022-01-06T07:00:38Z","page":"239-242","citation":{"ieee":"S. Greulich-Weber, M. Zöller, and B. Friedel, “Textile Solar Cells Based on SiC Microwires,” <i>Materials Science Forum</i>, vol. 615–617, pp. 239–242, 2009.","chicago":"Greulich-Weber, Siegmund, M. Zöller, and B. Friedel. “Textile Solar Cells Based on SiC Microwires.” <i>Materials Science Forum</i> 615–617 (2009): 239–42. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.239\">https://doi.org/10.4028/www.scientific.net/msf.615-617.239</a>.","ama":"Greulich-Weber S, Zöller M, Friedel B. Textile Solar Cells Based on SiC Microwires. <i>Materials Science Forum</i>. 2009;615-617:239-242. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.239\">10.4028/www.scientific.net/msf.615-617.239</a>","apa":"Greulich-Weber, S., Zöller, M., &#38; Friedel, B. (2009). Textile Solar Cells Based on SiC Microwires. <i>Materials Science Forum</i>, <i>615</i>–<i>617</i>, 239–242. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.239\">https://doi.org/10.4028/www.scientific.net/msf.615-617.239</a>","mla":"Greulich-Weber, Siegmund, et al. “Textile Solar Cells Based on SiC Microwires.” <i>Materials Science Forum</i>, vol. 615–617, Trans Tech Publications, 2009, pp. 239–42, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.239\">10.4028/www.scientific.net/msf.615-617.239</a>.","short":"S. Greulich-Weber, M. Zöller, B. Friedel, Materials Science Forum 615–617 (2009) 239–242.","bibtex":"@article{Greulich-Weber_Zöller_Friedel_2009, title={Textile Solar Cells Based on SiC Microwires}, volume={615–617}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.239\">10.4028/www.scientific.net/msf.615-617.239</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber, Siegmund and Zöller, M. and Friedel, B.}, year={2009}, pages={239–242} }"},"year":"2009","publication_identifier":{"issn":["1662-9752"]},"publication_status":"published","language":[{"iso":"eng"}],"article_type":"original","department":[{"_id":"15"}],"user_id":"55706","_id":"4219","status":"public","abstract":[{"text":"The solar cell concept presented here is based on 3C-SiC nano- or microwires and conju¬gated polymers. Therefore the silicon carbide wires are fabricated by a sol-gel route including a car-bothermal reduction step, allowing growth with predetermined uniform diameters between 0.1 and 2μm and lengths up to several centimetres. The design of our photovoltaic device is therein based on a p-i-n structure, well known e.g. from silicon photovoltaics, involving an intrinsic semiconduc¬tor as the central photoactive layer, sandwiched between two complementary doped wide-bandgap semiconductors giving the driving force for charge separation. In our case the 3C-SiC microwires act as the electron acceptor and simultaneously as carrier material for all involved components of the photovoltaic element. ","lang":"eng"}],"publication":"Materials Science Forum","type":"journal_article"},{"publication_status":"published","publication_identifier":{"issn":["1662-9752"]},"year":"2009","citation":{"ama":"Greulich-Weber S, Friedel B. Bottom-Up Routes to Porous Silicon Carbide. <i>Materials Science Forum</i>. 2009;615-617:637-640. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.637\">10.4028/www.scientific.net/msf.615-617.637</a>","chicago":"Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous Silicon Carbide.” <i>Materials Science Forum</i> 615–617 (2009): 637–40. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.637\">https://doi.org/10.4028/www.scientific.net/msf.615-617.637</a>.","ieee":"S. Greulich-Weber and B. Friedel, “Bottom-Up Routes to Porous Silicon Carbide,” <i>Materials Science Forum</i>, vol. 615–617, pp. 637–640, 2009.","apa":"Greulich-Weber, S., &#38; Friedel, B. (2009). Bottom-Up Routes to Porous Silicon Carbide. <i>Materials Science Forum</i>, <i>615</i>–<i>617</i>, 637–640. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.637\">https://doi.org/10.4028/www.scientific.net/msf.615-617.637</a>","short":"S. Greulich-Weber, B. Friedel, Materials Science Forum 615–617 (2009) 637–640.","bibtex":"@article{Greulich-Weber_Friedel_2009, title={Bottom-Up Routes to Porous Silicon Carbide}, volume={615–617}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.637\">10.4028/www.scientific.net/msf.615-617.637</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber, Siegmund and Friedel, B.}, year={2009}, pages={637–640} }","mla":"Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous Silicon Carbide.” <i>Materials Science Forum</i>, vol. 615–617, Trans Tech Publications, 2009, pp. 637–40, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.637\">10.4028/www.scientific.net/msf.615-617.637</a>."},"page":"637-640","publisher":"Trans Tech Publications","date_updated":"2022-01-06T07:00:38Z","date_created":"2018-08-28T13:02:05Z","author":[{"first_name":"Siegmund","full_name":"Greulich-Weber, Siegmund","last_name":"Greulich-Weber"},{"last_name":"Friedel","full_name":"Friedel, B.","first_name":"B."}],"volume":"615-617","title":"Bottom-Up Routes to Porous Silicon Carbide","doi":"10.4028/www.scientific.net/msf.615-617.637","type":"journal_article","publication":"Materials Science Forum","abstract":[{"lang":"eng","text":"We report on constructive methods providing a large range of high purity porous SiC products. All methods are based on modified sol-gel processes combined with carbothermal re¬duction. We obtain monodisperse regular pores of well defined diameters by using carbon sphere templates which are removed after SiC infiltration. A different way is a sol-gel based conversion of graphite bodies into SiC, which transfers the porosity from the graphite matrix into the final SiC product. Thus a large variety of porosity features are available, originating either from natural poro¬sity of graphite or from priorly created nano-/ microstructures in the carbonaceous base material. Whereas all our pristine porous sol-gel derived silicon carbide products are semi-insulating, doping is possible, during the growth to modifiy the electrical and optical properties. "}],"status":"public","_id":"4220","user_id":"55706","department":[{"_id":"15"}],"article_type":"original","language":[{"iso":"eng"}]},{"date_updated":"2022-01-06T07:00:38Z","author":[{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"},{"first_name":"C.","last_name":"Seider","full_name":"Seider, C."},{"first_name":"F.","last_name":"Fischer","full_name":"Fischer, F."},{"first_name":"M.","last_name":"Weinl","full_name":"Weinl, M."},{"last_name":"Stritzker","full_name":"Stritzker, B.","first_name":"B."}],"volume":267,"doi":"10.1016/j.nimb.2009.01.052","publication_status":"published","publication_identifier":{"issn":["0168-583X"]},"has_accepted_license":"1","citation":{"apa":"Lindner, J., Seider, C., Fischer, F., Weinl, M., &#38; Stritzker, B. (2009). Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>267</i>(8–9), 1394–1397. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">https://doi.org/10.1016/j.nimb.2009.01.052</a>","short":"J. Lindner, C. Seider, F. Fischer, M. Weinl, B. Stritzker, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267 (2009) 1394–1397.","bibtex":"@article{Lindner_Seider_Fischer_Weinl_Stritzker_2009, title={Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks}, volume={267}, DOI={<a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">10.1016/j.nimb.2009.01.052</a>}, number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lindner, Jörg and Seider, C. and Fischer, F. and Weinl, M. and Stritzker, B.}, year={2009}, pages={1394–1397} }","mla":"Lindner, Jörg, et al. “Regular Surface Patterns by Local Swelling Induced by He Implantation into Silicon through Nanosphere Lithography Masks.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1394–97, doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">10.1016/j.nimb.2009.01.052</a>.","chicago":"Lindner, Jörg, C. Seider, F. Fischer, M. Weinl, and B. Stritzker. “Regular Surface Patterns by Local Swelling Induced by He Implantation into Silicon through Nanosphere Lithography Masks.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i> 267, no. 8–9 (2009): 1394–97. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">https://doi.org/10.1016/j.nimb.2009.01.052</a>.","ieee":"J. Lindner, C. Seider, F. Fischer, M. Weinl, and B. Stritzker, “Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks,” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, pp. 1394–1397, 2009.","ama":"Lindner J, Seider C, Fischer F, Weinl M, Stritzker B. Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>. 2009;267(8-9):1394-1397. doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.052\">10.1016/j.nimb.2009.01.052</a>"},"intvolume":"       267","page":"1394-1397","_id":"4221","user_id":"55706","article_type":"original","file_date_updated":"2018-08-28T13:05:32Z","extern":"1","type":"journal_article","status":"public","publisher":"Elsevier BV","date_created":"2018-08-28T13:04:23Z","title":"Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks","issue":"8-9","year":"2009","ddc":["530"],"language":[{"iso":"eng"}],"publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","abstract":[{"lang":"eng","text":"Nanopatterning of silicon surfaces by means of He+ ion implantation through self-organized colloidal\r\nmasks is reported for the first time. Nanosphere lithography (NSL) masks with mask openings of 46–\r\n230 nm width were deposited on Si(100) wafers. He+ ions were implanted through these masks in order\r\nto induce a local cavity formation and Si surface swelling. The surface morphology and the subsurface\r\nstructure were studied using atomic force microscopy (AFM) and cross-sectional transmission electron\r\nmicroscopy (XTEM), respectively, as a function of mask and implantation parameters. It is demonstrated\r\nthat regular arrays of both individual hillocks and trough-like circular rings can be generated."}],"file":[{"file_name":"Regular Silicon Surface Patterns by Local Swelling Induced by He Implantation through Nanosphere Lithography Masks.pdf","access_level":"closed","file_id":"4222","file_size":467219,"date_created":"2018-08-28T13:05:32Z","creator":"hclaudia","date_updated":"2018-08-28T13:05:32Z","relation":"main_file","success":1,"content_type":"application/pdf"}]},{"publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["0168-583X"]},"citation":{"apa":"Lutz, J., Gerlach, J. W., Lindner, J., Assmann, W., &#38; Mändl, S. (2009). Radiation suppressed oxide growth in the system Ni–Ti–O. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, <i>267</i>(8–9), 1634–1637. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">https://doi.org/10.1016/j.nimb.2009.01.068</a>","bibtex":"@article{Lutz_Gerlach_Lindner_Assmann_Mändl_2009, title={Radiation suppressed oxide growth in the system Ni–Ti–O}, volume={267}, DOI={<a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">10.1016/j.nimb.2009.01.068</a>}, number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lutz, J. and Gerlach, J.W. and Lindner, Jörg and Assmann, W. and Mändl, S.}, year={2009}, pages={1634–1637} }","short":"J. Lutz, J.W. Gerlach, J. Lindner, W. Assmann, S. Mändl, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267 (2009) 1634–1637.","mla":"Lutz, J., et al. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1634–37, doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">10.1016/j.nimb.2009.01.068</a>.","ama":"Lutz J, Gerlach JW, Lindner J, Assmann W, Mändl S. Radiation suppressed oxide growth in the system Ni–Ti–O. <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>. 2009;267(8-9):1634-1637. doi:<a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">10.1016/j.nimb.2009.01.068</a>","chicago":"Lutz, J., J.W. Gerlach, Jörg Lindner, W. Assmann, and S. Mändl. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i> 267, no. 8–9 (2009): 1634–37. <a href=\"https://doi.org/10.1016/j.nimb.2009.01.068\">https://doi.org/10.1016/j.nimb.2009.01.068</a>.","ieee":"J. Lutz, J. W. Gerlach, J. Lindner, W. Assmann, and S. Mändl, “Radiation suppressed oxide growth in the system Ni–Ti–O,” <i>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms</i>, vol. 267, no. 8–9, pp. 1634–1637, 2009."},"page":"1634-1637","intvolume":"       267","author":[{"last_name":"Lutz","full_name":"Lutz, J.","first_name":"J."},{"last_name":"Gerlach","full_name":"Gerlach, J.W.","first_name":"J.W."},{"first_name":"Jörg","id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner"},{"last_name":"Assmann","full_name":"Assmann, W.","first_name":"W."},{"full_name":"Mändl, S.","last_name":"Mändl","first_name":"S."}],"volume":267,"date_updated":"2022-01-06T07:00:39Z","doi":"10.1016/j.nimb.2009.01.068","type":"journal_article","status":"public","user_id":"55706","_id":"4223","extern":"1","file_date_updated":"2018-08-28T13:07:49Z","article_type":"original","issue":"8-9","year":"2009","date_created":"2018-08-28T13:07:17Z","publisher":"Elsevier BV","title":"Radiation suppressed oxide growth in the system Ni–Ti–O","publication":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","file":[{"relation":"main_file","success":1,"content_type":"application/pdf","file_id":"4224","access_level":"closed","file_name":"Radiation Suppressed Diffusion in the System Ni-Ti-O.pdf","file_size":342798,"creator":"hclaudia","date_created":"2018-08-28T13:07:49Z","date_updated":"2018-08-28T13:07:49Z"}],"abstract":[{"lang":"eng","text":"The formation of a thick protective oxide layer on NiTi by plasma immersion ion implantation (PIII) for\r\nmedical devices is an established technology on the laboratory scale. It is shown here that by pre-implantation\r\nwith either 180 keV Ni or low fluence of 190 MeV Au ions, a radiation suppressed growth of the\r\noxide layer of up to 40% is observed. At higher Au fluence and higher PIII temperatures, this changes into\r\nan enhancement of 25–40%. Different amorphisation mechanisms or disorder formation is proposed as\r\nthe underlying effect."}],"language":[{"iso":"eng"}],"ddc":["530"]},{"_id":"4225","user_id":"55706","department":[{"_id":"15"}],"article_type":"original","language":[{"iso":"eng"}],"type":"journal_article","publication":"Materials Science Forum","abstract":[{"text":"EPR and ESE in nitrogen doped 4H- and 6H-SiC show besides the well known triplet lines of 14N on quasi-cubic (Nc,k) and hexagonal (Nc,h) sites additional lines (Nx) of comparatively low intensity providing half the hf splitting of Nc,k. Frequently re-interpreted as spin-forbidden lines, arising from Nc,k pairs and triads or resulting from hopping conductivity, only recently the theoretical calculation of the corresponding g-tensors lead to a tentative model of distant NC donor pairs on inequivalent lattice sites which are coupled to S = 1 assuming a fine-structure splitting too small to be observed in the EPR and ESE experiments. In this work, we present ESE nutation measurements confirming S = 1 for the Nx center. Analysing the nutation frequencies in comparison with that of the Nc,k (S = 1/2) spectrum as well as the line width of ESE and EPR spectra we obtain a rough estimate between 5×104 cm-1 and 50×104 cm-1 for the fine-structure splitting demonstrating efficient spin-coupling between nitrogen donors in 4H-SiC.","lang":"eng"}],"status":"public","date_updated":"2022-01-06T07:00:39Z","publisher":"Trans Tech Publications","date_created":"2018-08-28T13:09:27Z","author":[{"last_name":"Savchenko","full_name":"Savchenko, D.V.","first_name":"D.V."},{"first_name":"Andreas","full_name":"Pöppl, Andreas","last_name":"Pöppl"},{"first_name":"Ekaterina N.","last_name":"Kalabukhova","full_name":"Kalabukhova, Ekaterina N."},{"first_name":"Siegmund","full_name":"Greulich-Weber, Siegmund","last_name":"Greulich-Weber"},{"full_name":"Rauls, Eva","last_name":"Rauls","first_name":"Eva"},{"first_name":"Wolf Gero","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"},{"first_name":"Uwe","full_name":"Gerstmann, Uwe","last_name":"Gerstmann"}],"volume":"615-617","title":"Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC","doi":"10.4028/www.scientific.net/msf.615-617.343","publication_status":"published","publication_identifier":{"issn":["1662-9752"]},"year":"2009","citation":{"ama":"Savchenko DV, Pöppl A, Kalabukhova EN, et al. Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC. <i>Materials Science Forum</i>. 2009;615-617:343-346. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.343\">10.4028/www.scientific.net/msf.615-617.343</a>","ieee":"D. V. Savchenko <i>et al.</i>, “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC,” <i>Materials Science Forum</i>, vol. 615–617, pp. 343–346, 2009.","chicago":"Savchenko, D.V., Andreas Pöppl, Ekaterina N. Kalabukhova, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC.” <i>Materials Science Forum</i> 615–617 (2009): 343–46. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.343\">https://doi.org/10.4028/www.scientific.net/msf.615-617.343</a>.","apa":"Savchenko, D. V., Pöppl, A., Kalabukhova, E. N., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2009). Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC. <i>Materials Science Forum</i>, <i>615</i>–<i>617</i>, 343–346. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.343\">https://doi.org/10.4028/www.scientific.net/msf.615-617.343</a>","bibtex":"@article{Savchenko_Pöppl_Kalabukhova_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC}, volume={615–617}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.343\">10.4028/www.scientific.net/msf.615-617.343</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Savchenko, D.V. and Pöppl, Andreas and Kalabukhova, Ekaterina N. and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2009}, pages={343–346} }","mla":"Savchenko, D. V., et al. “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC.” <i>Materials Science Forum</i>, vol. 615–617, Trans Tech Publications, 2009, pp. 343–46, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.615-617.343\">10.4028/www.scientific.net/msf.615-617.343</a>.","short":"D.V. Savchenko, A. Pöppl, E.N. Kalabukhova, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 615–617 (2009) 343–346."},"page":"343-346"},{"_id":"4226","department":[{"_id":"15"}],"user_id":"55706","article_type":"original","file_date_updated":"2018-08-28T13:12:36Z","type":"journal_article","status":"public","date_updated":"2022-01-06T07:00:39Z","volume":404,"author":[{"first_name":"A.","last_name":"Scholle","full_name":"Scholle, A."},{"first_name":"S.","full_name":"Greulich-Weber, S.","last_name":"Greulich-Weber"},{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."},{"first_name":"W.G.","last_name":"Schmidt","full_name":"Schmidt, W.G."},{"first_name":"U.","last_name":"Gerstmann","full_name":"Gerstmann, U."}],"doi":"10.1016/j.physb.2009.08.123","has_accepted_license":"1","publication_identifier":{"issn":["0921-4526"]},"publication_status":"published","page":"4742-4744","intvolume":"       404","citation":{"apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2009). Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>, <i>404</i>(23–24), 4742–4744. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>","mla":"Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i>, vol. 404, no. 23–24, Elsevier BV, 2009, pp. 4742–44, doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>.","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>}, number={23–24}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV}, author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, W.G. and Gerstmann, U.}, year={2009}, pages={4742–4744} }","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Physica B: Condensed Matter 404 (2009) 4742–4744.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Vacancy clusters created via room temperature irradiation in 6H-SiC. <i>Physica B: Condensed Matter</i>. 2009;404(23-24):4742-4744. doi:<a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">10.1016/j.physb.2009.08.123</a>","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Vacancy clusters created via room temperature irradiation in 6H-SiC,” <i>Physica B: Condensed Matter</i>, vol. 404, no. 23–24, pp. 4742–4744, 2009.","chicago":"Scholle, A., S. Greulich-Weber, E. Rauls, W.G. Schmidt, and U. Gerstmann. “Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” <i>Physica B: Condensed Matter</i> 404, no. 23–24 (2009): 4742–44. <a href=\"https://doi.org/10.1016/j.physb.2009.08.123\">https://doi.org/10.1016/j.physb.2009.08.123</a>."},"ddc":["530"],"language":[{"iso":"eng"}],"publication":"Physica B: Condensed Matter","abstract":[{"lang":"eng","text":"In non-annealed 6H-SiC samples that were electron irradiated at low temperature, a new EPR signal due to a\r\nS =1 defect center with exceptionally large zero-field splitting (D= +652\u000210\u00034cm\u00031,E=\u00038\u000210\u00034cm\u00031) has been observed under illumination. A positive sign of D demonstrates that the spin–orbit contribution to the zero-field splitting exceeds by far that of the spin–spin interaction. A principal axis of the fine-structure tilted by 59 1 against the crystal\r\nc -axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin–orbit coupling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior."}],"file":[{"file_id":"4227","file_name":"Vacancy clusters created via room temperature irradiation in 6H-SiC.pdf","access_level":"closed","file_size":223477,"date_created":"2018-08-28T13:12:36Z","creator":"hclaudia","date_updated":"2018-08-28T13:12:36Z","relation":"main_file","success":1,"content_type":"application/pdf"}],"publisher":"Elsevier BV","date_created":"2018-08-28T13:11:31Z","title":"Vacancy clusters created via room temperature irradiation in 6H-SiC","issue":"23-24","year":"2009"},{"year":"2009","date_created":"2018-08-28T13:15:19Z","publisher":"SPIE","title":"GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE","publication":"Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII","abstract":[{"lang":"eng","text":"The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an AlN nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ~3.5 V at 20 mA from a 500 μm x 500 μm device."}],"language":[{"iso":"eng"}],"publication_status":"published","intvolume":"      7231","citation":{"apa":"Zhu, D., McAleese, C., McLaughlin, K. K., Häberlen, M., Salcianu, C. O., Thrush, E. J., … Humphreys, C. J. (2009). GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE. In K. P. Streubel, H. Jeon, &#38; L.-W. Tu (Eds.), <i>Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII</i> (Vol. 7231). San Jose, California (USA): SPIE. <a href=\"https://doi.org/10.1117/12.814919\">https://doi.org/10.1117/12.814919</a>","mla":"Zhu, D., et al. “GaN-Based LEDs Grown on 6-Inch Diameter Si (111) Substrates by MOVPE.” <i>Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII</i>, edited by Klaus P. Streubel et al., vol. 7231, 723118, SPIE, 2009, doi:<a href=\"https://doi.org/10.1117/12.814919\">10.1117/12.814919</a>.","short":"D. Zhu, C. McAleese, K.K. McLaughlin, M. Häberlen, C.O. Salcianu, E.J. Thrush, M.J. Kappers, W.A. Phillips, P. Lane, D.J. Wallis, T. Martin, M. Astles, S. Thomas, A. Pakes, M. Heuken, C.J. Humphreys, in: K.P. Streubel, H. Jeon, L.-W. 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