---
_id: '9636'
author:
- first_name: Merle
full_name: Tönnies, Merle
id: '555'
last_name: Tönnies
citation:
ama: 'Tönnies M. Assmann, A.: Einführung in die Kulturwissenschaft. Anglistik
International Journal of English Studies. 2009;20(1):198-200.'
apa: 'Tönnies, M. (2009). Assmann, A.: Einführung in die Kulturwissenschaft. Anglistik.
International Journal of English Studies.'
bibtex: '@article{Tönnies_2009, title={Assmann, A.: Einführung in die Kulturwissenschaft},
volume={20}, number={1}, journal={Anglistik. International Journal of English
Studies}, author={Tönnies, Merle}, year={2009}, pages={198–200} }'
chicago: 'Tönnies, Merle. “Assmann, A.: Einführung in Die Kulturwissenschaft.” Anglistik.
International Journal of English Studies, 2009.'
ieee: 'M. Tönnies, “Assmann, A.: Einführung in die Kulturwissenschaft,” Anglistik.
International Journal of English Studies, vol. 20, no. 1. pp. 198–200, 2009.'
mla: 'Tönnies, Merle. “Assmann, A.: Einführung in Die Kulturwissenschaft.” Anglistik.
International Journal of English Studies, vol. 20, no. 1, 2009, pp. 198–200.'
short: M. Tönnies, Anglistik. International Journal of English Studies 20 (2009)
198–200.
date_created: 2019-05-07T09:19:00Z
date_updated: 2022-01-06T07:04:17Z
department:
- _id: '36'
- _id: '1'
- _id: '380'
intvolume: ' 20'
issue: '1'
language:
- iso: eng
page: 198-200
publication: Anglistik. International Journal of English Studies
publication_status: published
status: public
title: 'Assmann, A.: Einführung in die Kulturwissenschaft'
type: review
user_id: '32277'
volume: 20
year: '2009'
...
---
_id: '9727'
author:
- first_name: Christina
full_name: Flotmann, Christina
id: '8736'
last_name: Flotmann
citation:
ama: 'Flotmann C. Lionel Johnson. In: Arnold HL, ed. Kindlers Literaturlexikon.
Vol 8. 3rd ed. Stuttgart: J.B. Metzler Verlag; 2009:409-410.'
apa: 'Flotmann, C. (2009). Lionel Johnson. In H. L. Arnold (Ed.), Kindlers Literaturlexikon
(3rd ed., Vol. 8, pp. 409–410). Stuttgart: J.B. Metzler Verlag.'
bibtex: '@inbook{Flotmann_2009, place={Stuttgart}, edition={3}, title={Lionel Johnson},
volume={8}, booktitle={Kindlers Literaturlexikon}, publisher={J.B. Metzler Verlag},
author={Flotmann, Christina}, editor={Arnold, Heinz LudwigEditor}, year={2009},
pages={409–410} }'
chicago: 'Flotmann, Christina. “Lionel Johnson.” In Kindlers Literaturlexikon,
edited by Heinz Ludwig Arnold, 3rd ed., 8:409–10. Stuttgart: J.B. Metzler Verlag,
2009.'
ieee: 'C. Flotmann, “Lionel Johnson,” in Kindlers Literaturlexikon, 3rd ed.,
vol. 8, H. L. Arnold, Ed. Stuttgart: J.B. Metzler Verlag, 2009, pp. 409–410.'
mla: Flotmann, Christina. “Lionel Johnson.” Kindlers Literaturlexikon, edited
by Heinz Ludwig Arnold, 3rd ed., vol. 8, J.B. Metzler Verlag, 2009, pp. 409–10.
short: 'C. Flotmann, in: H.L. Arnold (Ed.), Kindlers Literaturlexikon, 3rd ed.,
J.B. Metzler Verlag, Stuttgart, 2009, pp. 409–410.'
date_created: 2019-05-13T07:35:06Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '36'
- _id: '1'
- _id: '380'
edition: '3'
editor:
- first_name: Heinz Ludwig
full_name: Arnold, Heinz Ludwig
last_name: Arnold
intvolume: ' 8'
language:
- iso: ger
page: 409-410
place: Stuttgart
publication: Kindlers Literaturlexikon
publication_status: published
publisher: J.B. Metzler Verlag
status: public
title: Lionel Johnson
type: encyclopedia_article
user_id: '32277'
volume: 8
year: '2009'
...
---
_id: '9735'
abstract:
- lang: eng
text: Die Entwicklung piezoelektrischer Tr{\"a}gheitsmotoren basiert derzeit auf
Erfahrungswissen und Prototypenbau. Es existiert kein allgemeines Modell und keine
Methodik f{\"u}r die systematische Entwicklung dieser Motoren. In diesem Beitrag
stellen wir einen Ansatz zur Entwicklung einer solchen Methodik und den von uns
aufgebauten Versuchsmotor vor. Der Motor ist modular aufgebaut; er besteht im
Wesentlichen aus einer piezoelektrischen Antriebseinheit, einem Antriebsstab und
dem zu bewegenden Schlitten. Eine wesentliche Aufgabe bei der modellbasierten
Entwicklung von Tr{\"a}gheitsmotoren ist die hinreichende Beschreibung des dynamischen
Verhaltens der Antriebseinheit. Um ein geeignetes Modell zu finden, bzw. um nachzuweisen,
dass einfache parametrische Modelle gen{\"u}gen, wird die Antriebseinheit des
Motors detailliert untersucht. Es zeigt sich, dass der derzeitige Aufbau eine
Reihe von Nachteilen aufweist, die durch eine teilweise Neukonstruktion der Antriebseinheit
beseitigt oder zumindest entsch{\"a}rft werden k{\"o}nnen.
author:
- first_name: Matthias
full_name: Hunstig, Matthias
last_name: Hunstig
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
citation:
ama: 'Hunstig M, Hemsel T. Modellbasierte Entwicklung piezoelektrischer Trägheitsmotoren.
In: Gausemeier J, Rammig F, Schäfer Wilhelm, Trächtler A, eds. 6. Paderborner
Workshop Entwurf Mechatronischer Systeme. Vol 250. HNI-Verlagsschriftenreihe.
Paderborn: Heinz Nixdorf Institut, Universität Paderborn; 2009:85-96.'
apa: 'Hunstig, M., & Hemsel, T. (2009). Modellbasierte Entwicklung piezoelektrischer
Trägheitsmotoren. In J. Gausemeier, F. Rammig, Wilhelm Schäfer, & A. Trächtler
(Eds.), 6. Paderborner Workshop Entwurf mechatronischer Systeme (Vol. 250,
pp. 85–96). Paderborn: Heinz Nixdorf Institut, Universität Paderborn.'
bibtex: '@inproceedings{Hunstig_Hemsel_2009, place={Paderborn}, series={HNI-Verlagsschriftenreihe},
title={Modellbasierte Entwicklung piezoelektrischer Trägheitsmotoren}, volume={250},
booktitle={6. Paderborner Workshop Entwurf mechatronischer Systeme}, publisher={Heinz
Nixdorf Institut, Universität Paderborn}, author={Hunstig, Matthias and Hemsel,
Tobias}, editor={Gausemeier, Jürgen and Rammig, Franz and Schäfer, Wilhelm and
Trächtler, AnsgarEditors}, year={2009}, pages={85–96}, collection={HNI-Verlagsschriftenreihe}
}'
chicago: 'Hunstig, Matthias, and Tobias Hemsel. “Modellbasierte Entwicklung Piezoelektrischer
Trägheitsmotoren.” In 6. Paderborner Workshop Entwurf Mechatronischer Systeme,
edited by Jürgen Gausemeier, Franz Rammig, Wilhelm Schäfer, and Ansgar Trächtler,
250:85–96. HNI-Verlagsschriftenreihe. Paderborn: Heinz Nixdorf Institut, Universität
Paderborn, 2009.'
ieee: M. Hunstig and T. Hemsel, “Modellbasierte Entwicklung piezoelektrischer Trägheitsmotoren,”
in 6. Paderborner Workshop Entwurf mechatronischer Systeme, 2009, vol.
250, pp. 85–96.
mla: Hunstig, Matthias, and Tobias Hemsel. “Modellbasierte Entwicklung Piezoelektrischer
Trägheitsmotoren.” 6. Paderborner Workshop Entwurf Mechatronischer Systeme,
edited by Jürgen Gausemeier et al., vol. 250, Heinz Nixdorf Institut, Universität
Paderborn, 2009, pp. 85–96.
short: 'M. Hunstig, T. Hemsel, in: J. Gausemeier, F. Rammig, Wilhelm Schäfer,
A. Trächtler (Eds.), 6. Paderborner Workshop Entwurf Mechatronischer Systeme,
Heinz Nixdorf Institut, Universität Paderborn, Paderborn, 2009, pp. 85–96.'
date_created: 2019-05-13T08:59:32Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
editor:
- first_name: Jürgen
full_name: Gausemeier, Jürgen
last_name: Gausemeier
- first_name: Franz
full_name: Rammig, Franz
last_name: Rammig
- first_name: ' Wilhelm'
full_name: ' Schäfer, Wilhelm'
last_name: ' Schäfer'
- first_name: Ansgar
full_name: Trächtler, Ansgar
last_name: Trächtler
intvolume: ' 250'
keyword:
- Piezoelektrischer Tr{\
language:
- iso: eng
page: 85-96
place: Paderborn
publication: 6. Paderborner Workshop Entwurf mechatronischer Systeme
publication_identifier:
issn:
- 1948-5719
publisher: Heinz Nixdorf Institut, Universität Paderborn
series_title: HNI-Verlagsschriftenreihe
status: public
title: Modellbasierte Entwicklung piezoelektrischer Trägheitsmotoren
type: conference
user_id: '55222'
volume: 250
year: '2009'
...
---
_id: '9736'
abstract:
- lang: eng
text: Self-optimizing mechatronic systems are a new class of technical systems.
On the one hand, new challenges regarding dependability arise from their additional
complexity and adaptivity. On the other hand, their abilities enable new concepts
and methods to improve the dependability of mechatronic systems. This paper introduces
a multi-level dependability concept for self-optimizing mechatronic systems and
shows how planning can be used to improve the availability and reliability of
systems in the operating stages.
author:
- first_name: Benjamin
full_name: Klöpper, Benjamin
last_name: Klöpper
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Christoph
full_name: Romaus, Christoph
last_name: Romaus
- first_name: Henner
full_name: Vöcking, Henner
last_name: Vöcking
citation:
ama: 'Klöpper B, Sondermann-Wölke C, Romaus C, Vöcking H. Probabilistic planning
integrated in a multi-level dependability concept for mechatronic systems. In:
Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE
Symposium On. ; 2009:104-111. doi:10.1109/CICA.2009.4982790'
apa: Klöpper, B., Sondermann-Wölke, C., Romaus, C., & Vöcking, H. (2009). Probabilistic
planning integrated in a multi-level dependability concept for mechatronic systems.
In Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE
Symposium on (pp. 104–111). https://doi.org/10.1109/CICA.2009.4982790
bibtex: '@inproceedings{Klöpper_Sondermann-Wölke_Romaus_Vöcking_2009, title={Probabilistic
planning integrated in a multi-level dependability concept for mechatronic systems},
DOI={10.1109/CICA.2009.4982790},
booktitle={Computational Intelligence in Control and Automation, 2009. CICA 2009.
IEEE Symposium on}, author={Klöpper, Benjamin and Sondermann-Wölke, Christoph
and Romaus, Christoph and Vöcking, Henner}, year={2009}, pages={104–111} }'
chicago: Klöpper, Benjamin, Christoph Sondermann-Wölke, Christoph Romaus, and Henner
Vöcking. “Probabilistic Planning Integrated in a Multi-Level Dependability Concept
for Mechatronic Systems.” In Computational Intelligence in Control and Automation,
2009. CICA 2009. IEEE Symposium On, 104–11, 2009. https://doi.org/10.1109/CICA.2009.4982790.
ieee: B. Klöpper, C. Sondermann-Wölke, C. Romaus, and H. Vöcking, “Probabilistic
planning integrated in a multi-level dependability concept for mechatronic systems,”
in Computational Intelligence in Control and Automation, 2009. CICA 2009. IEEE
Symposium on, 2009, pp. 104–111.
mla: Klöpper, Benjamin, et al. “Probabilistic Planning Integrated in a Multi-Level
Dependability Concept for Mechatronic Systems.” Computational Intelligence
in Control and Automation, 2009. CICA 2009. IEEE Symposium On, 2009, pp. 104–11,
doi:10.1109/CICA.2009.4982790.
short: 'B. Klöpper, C. Sondermann-Wölke, C. Romaus, H. Vöcking, in: Computational
Intelligence in Control and Automation, 2009. CICA 2009. IEEE Symposium On, 2009,
pp. 104–111.'
date_created: 2019-05-13T09:03:57Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
doi: 10.1109/CICA.2009.4982790
keyword:
- multilevel dependability concept
- probabilistic planning
- self-optimizing mechatronic systems
- systems reliability
- mechatronics
- planning (artificial intelligence)
- self-adjusting systems
language:
- iso: eng
page: 104 -111
publication: Computational Intelligence in Control and Automation, 2009. CICA 2009.
IEEE Symposium on
quality_controlled: '1'
status: public
title: Probabilistic planning integrated in a multi-level dependability concept for
mechatronic systems
type: conference
user_id: '55222'
year: '2009'
...
---
_id: '9738'
author:
- first_name: Thomas
full_name: Sattel, Thomas
last_name: Sattel
- first_name: Tobias
full_name: Hesse, Tobias
last_name: Hesse
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Thorsten
full_name: Hüfner, Thorsten
last_name: Hüfner
citation:
ama: Sattel T, Hesse T, Sondermann-Wölke C, Hüfner T. Potenzialfeldmethoden zur
Fahrzeugführung für Fahrerassistenzsysteme zum automatisierten Fahren. memo
- mechatronik mobil. 2009;1:30-40.
apa: Sattel, T., Hesse, T., Sondermann-Wölke, C., & Hüfner, T. (2009). Potenzialfeldmethoden
zur Fahrzeugführung für Fahrerassistenzsysteme zum automatisierten Fahren. Memo
- Mechatronik Mobil, 1, 30–40.
bibtex: '@article{Sattel_Hesse_Sondermann-Wölke_Hüfner_2009, title={Potenzialfeldmethoden
zur Fahrzeugführung für Fahrerassistenzsysteme zum automatisierten Fahren}, volume={1},
journal={memo - mechatronik mobil}, author={Sattel, Thomas and Hesse, Tobias and
Sondermann-Wölke, Christoph and Hüfner, Thorsten}, year={2009}, pages={30–40}
}'
chicago: 'Sattel, Thomas, Tobias Hesse, Christoph Sondermann-Wölke, and Thorsten
Hüfner. “Potenzialfeldmethoden Zur Fahrzeugführung Für Fahrerassistenzsysteme
Zum Automatisierten Fahren.” Memo - Mechatronik Mobil 1 (2009): 30–40.'
ieee: T. Sattel, T. Hesse, C. Sondermann-Wölke, and T. Hüfner, “Potenzialfeldmethoden
zur Fahrzeugführung für Fahrerassistenzsysteme zum automatisierten Fahren,” memo
- mechatronik mobil, vol. 1, pp. 30–40, 2009.
mla: Sattel, Thomas, et al. “Potenzialfeldmethoden Zur Fahrzeugführung Für Fahrerassistenzsysteme
Zum Automatisierten Fahren.” Memo - Mechatronik Mobil, vol. 1, 2009, pp.
30–40.
short: T. Sattel, T. Hesse, C. Sondermann-Wölke, T. Hüfner, Memo - Mechatronik Mobil
1 (2009) 30–40.
date_created: 2019-05-13T09:12:26Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
intvolume: ' 1'
language:
- iso: eng
page: 30-40
publication: memo - mechatronik mobil
status: public
title: Potenzialfeldmethoden zur Fahrzeugführung für Fahrerassistenzsysteme zum automatisierten
Fahren
type: journal_article
user_id: '55222'
volume: 1
year: '2009'
...
---
_id: '9740'
abstract:
- lang: eng
text: Die Integration von Selbstoptimierung in mechatronische Systeme beinhaltet
sowohl Risiken als auch Potenziale für die Verlässlichkeit. Die Risiken entstehen
durch die Selbstoptimierung in den komplexen Systemen, da das Systemverhalten
nur begrenzt im Voraus vorhersehbar ist. Daher wurde innerhalb des Sonderforschungsbereichs
614 ''Selbstoptimierende Systeme des Maschinenbaus" ein mehrstufiges Verlässlichkeitskonzept
entworfen, welches das Ziel Verlässlichkeit stärker im Zielsystem verankert. In
diesem Beitrag wird zum einen das erarbeitete Verlässlichkeitskonzept und zum
anderen die Anwendung dieses Konzepts innerhalb des aktiven Spurführungsmoduls
eines schienengebundenen Fahrzeugs vorgestellt. Um Programmierfehler auszuschließen
wurde das Verlässlichkeitskonzept modelliert und über Model Checking verifiziert.
Anhand von Simulationsergebnissen wird gezeigt, wie durch das mehrstufige Verlässlichkeitskonzept
auf einen Ausfall eines Wirbelstromsensors des aktiven Spurführungsmoduls reagiert
werden kann.
author:
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Jens
full_name: Geisler, Jens
last_name: Geisler
- first_name: Martin
full_name: Hirsch, Martin
last_name: Hirsch
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
citation:
ama: 'Sondermann-Wölke C, Geisler J, Hirsch M, Hemsel T. Verlässlichkeit im aktiven
selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs. In:
Gausemeier J, Rammig FJ, Trächtler A, eds. Entwurf Mechatronischer Systeme.
Vol 250. HNI-Verlagsschriftenreihe. Paderborn; 2009:231-242.'
apa: Sondermann-Wölke, C., Geisler, J., Hirsch, M., & Hemsel, T. (2009). Verlässlichkeit
im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs.
In J. Gausemeier, F. J. Rammig, & A. Trächtler (Eds.), Entwurf mechatronischer
Systeme (Vol. 250, pp. 231–242). Paderborn.
bibtex: '@inproceedings{Sondermann-Wölke_Geisler_Hirsch_Hemsel_2009, place={Paderborn},
series={HNI-Verlagsschriftenreihe}, title={Verlässlichkeit im aktiven selbstoptimierenden
Spurführungsmodul eines schienengebundenen Fahrzeugs}, volume={250}, booktitle={Entwurf
mechatronischer Systeme}, author={Sondermann-Wölke, Christoph and Geisler, Jens
and Hirsch, Martin and Hemsel, Tobias}, editor={Gausemeier, Jürgen and Rammig,
Franz Josef and Trächtler, AnsgerEditors}, year={2009}, pages={231–242}, collection={HNI-Verlagsschriftenreihe}
}'
chicago: Sondermann-Wölke, Christoph, Jens Geisler, Martin Hirsch, and Tobias Hemsel.
“Verlässlichkeit Im Aktiven Selbstoptimierenden Spurführungsmodul Eines Schienengebundenen
Fahrzeugs.” In Entwurf Mechatronischer Systeme, edited by Jürgen Gausemeier,
Franz Josef Rammig, and Ansger Trächtler, 250:231–42. HNI-Verlagsschriftenreihe.
Paderborn, 2009.
ieee: C. Sondermann-Wölke, J. Geisler, M. Hirsch, and T. Hemsel, “Verlässlichkeit
im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen Fahrzeugs,”
in Entwurf mechatronischer Systeme, 2009, vol. 250, pp. 231–242.
mla: Sondermann-Wölke, Christoph, et al. “Verlässlichkeit Im Aktiven Selbstoptimierenden
Spurführungsmodul Eines Schienengebundenen Fahrzeugs.” Entwurf Mechatronischer
Systeme, edited by Jürgen Gausemeier et al., vol. 250, 2009, pp. 231–42.
short: 'C. Sondermann-Wölke, J. Geisler, M. Hirsch, T. Hemsel, in: J. Gausemeier,
F.J. Rammig, A. Trächtler (Eds.), Entwurf Mechatronischer Systeme, Paderborn,
2009, pp. 231–242.'
date_created: 2019-05-13T09:17:07Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
editor:
- first_name: Jürgen
full_name: Gausemeier, Jürgen
last_name: Gausemeier
- first_name: Franz Josef
full_name: Rammig, Franz Josef
last_name: Rammig
- first_name: Ansger
full_name: Trächtler, Ansger
last_name: Trächtler
intvolume: ' 250'
keyword:
- Verlässigkeit
language:
- iso: eng
page: 231 - 242
place: Paderborn
publication: Entwurf mechatronischer Systeme
series_title: HNI-Verlagsschriftenreihe
status: public
title: Verlässlichkeit im aktiven selbstoptimierenden Spurführungsmodul eines schienengebundenen
Fahrzeugs
type: conference
user_id: '55222'
volume: 250
year: '2009'
...
---
_id: '9741'
author:
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Tobias
full_name: Hesse, Tobias
last_name: Hesse
- first_name: Thomas
full_name: Sattel, Thomas
last_name: Sattel
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
citation:
ama: 'Sondermann-Wölke C, Hesse T, Sattel T, Hemsel T. Menschliche Unzuverlässigkeit
als Grundlage für den Entwurf von Kollisionsvermeidungssystemen. In: 24. Tagung
Technische Zuverlässigkeit (TTZ 2009) - Entwicklung Und Betrieb Zuverlässiger
Produkte, Leonberg. Vol 2065. VDI-Berichte. Düsseldorf; 2009:335-340.'
apa: Sondermann-Wölke, C., Hesse, T., Sattel, T., & Hemsel, T. (2009). Menschliche
Unzuverlässigkeit als Grundlage für den Entwurf von Kollisionsvermeidungssystemen.
In 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb
zuverlässiger Produkte, Leonberg (Vol. 2065, pp. 335–340). Düsseldorf.
bibtex: '@inproceedings{Sondermann-Wölke_Hesse_Sattel_Hemsel_2009, place={Düsseldorf},
series={VDI-Berichte}, title={Menschliche Unzuverlässigkeit als Grundlage für
den Entwurf von Kollisionsvermeidungssystemen.}, volume={2065}, booktitle={24.
Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb zuverlässiger
Produkte, Leonberg}, author={Sondermann-Wölke, Christoph and Hesse, Tobias and
Sattel, Thomas and Hemsel, Tobias}, year={2009}, pages={335–340}, collection={VDI-Berichte}
}'
chicago: Sondermann-Wölke, Christoph, Tobias Hesse, Thomas Sattel, and Tobias Hemsel.
“Menschliche Unzuverlässigkeit Als Grundlage Für Den Entwurf von Kollisionsvermeidungssystemen.”
In 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung Und Betrieb
Zuverlässiger Produkte, Leonberg, 2065:335–40. VDI-Berichte. Düsseldorf, 2009.
ieee: C. Sondermann-Wölke, T. Hesse, T. Sattel, and T. Hemsel, “Menschliche Unzuverlässigkeit
als Grundlage für den Entwurf von Kollisionsvermeidungssystemen.,” in 24. Tagung
Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb zuverlässiger
Produkte, Leonberg, 2009, vol. 2065, pp. 335–340.
mla: Sondermann-Wölke, Christoph, et al. “Menschliche Unzuverlässigkeit Als Grundlage
Für Den Entwurf von Kollisionsvermeidungssystemen.” 24. Tagung Technische Zuverlässigkeit
(TTZ 2009) - Entwicklung Und Betrieb Zuverlässiger Produkte, Leonberg, vol.
2065, 2009, pp. 335–40.
short: 'C. Sondermann-Wölke, T. Hesse, T. Sattel, T. Hemsel, in: 24. Tagung Technische
Zuverlässigkeit (TTZ 2009) - Entwicklung Und Betrieb Zuverlässiger Produkte, Leonberg,
Düsseldorf, 2009, pp. 335–340.'
date_created: 2019-05-13T09:27:29Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
intvolume: ' 2065'
language:
- iso: eng
page: 335 - 340
place: Düsseldorf
publication: 24. Tagung Technische Zuverlässigkeit (TTZ 2009) - Entwicklung und Betrieb
zuverlässiger Produkte, Leonberg
series_title: VDI-Berichte
status: public
title: Menschliche Unzuverlässigkeit als Grundlage für den Entwurf von Kollisionsvermeidungssystemen.
type: conference
user_id: '55222'
volume: 2065
year: '2009'
...
---
_id: '9742'
abstract:
- lang: eng
text: New mechatronic systems, called self-optimizing systems, are able to adapt
their behavior according to environmental, user and system specific influences.
Self-optimizing systems are complex and due to their non-deterministic behavior
comprise hidden risks, which cannot be foreseen in the design phase of the system.
Therefore, this paper presents modifications of the current condition monitoring
policy, to be able to cope with this new kind of systems. Beside avoiding critical
situations evoked by self-optimization, the proposed concept uses self-optimization
to increase the dependability of the system. In this case, the concept is applied
to the active guidance module of an innovative rail-bound vehicle.
author:
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Walter
full_name: Sextro, Walter
id: '21220'
last_name: Sextro
citation:
ama: 'Sondermann-Wölke C, Sextro W. Towards the Integration of Condition Monitoring
in Self-Optimizing Function Modules. In: Future Computing, Service Computation,
Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation
World: ; 2009:15-20. doi:10.1109/ComputationWorld.2009.47'
apa: Sondermann-Wölke, C., & Sextro, W. (2009). Towards the Integration of Condition
Monitoring in Self-Optimizing Function Modules. In Future Computing, Service
Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09.
Computation World: (pp. 15–20). https://doi.org/10.1109/ComputationWorld.2009.47
bibtex: '@inproceedings{Sondermann-Wölke_Sextro_2009, title={Towards the Integration
of Condition Monitoring in Self-Optimizing Function Modules}, DOI={10.1109/ComputationWorld.2009.47},
booktitle={Future Computing, Service Computation, Cognitive, Adaptive, Content,
Patterns, 2009. COMPUTATIONWORLD ’09. Computation World:}, author={Sondermann-Wölke,
Christoph and Sextro, Walter}, year={2009}, pages={15–20} }'
chicago: Sondermann-Wölke, Christoph, and Walter Sextro. “Towards the Integration
of Condition Monitoring in Self-Optimizing Function Modules.” In Future Computing,
Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD
’09. Computation World:, 15–20, 2009. https://doi.org/10.1109/ComputationWorld.2009.47.
ieee: C. Sondermann-Wölke and W. Sextro, “Towards the Integration of Condition Monitoring
in Self-Optimizing Function Modules,” in Future Computing, Service Computation,
Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation
World:, 2009, pp. 15–20.
mla: Sondermann-Wölke, Christoph, and Walter Sextro. “Towards the Integration of
Condition Monitoring in Self-Optimizing Function Modules.” Future Computing,
Service Computation, Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD
’09. Computation World:, 2009, pp. 15–20, doi:10.1109/ComputationWorld.2009.47.
short: 'C. Sondermann-Wölke, W. Sextro, in: Future Computing, Service Computation,
Cognitive, Adaptive, Content, Patterns, 2009. COMPUTATIONWORLD ’09. Computation
World:, 2009, pp. 15–20.'
date_created: 2019-05-13T09:31:52Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
doi: 10.1109/ComputationWorld.2009.47
keyword:
- condition monitoring
- mechatronic systems
- rail bound vehicle
- rail guidance module
- self-optimization
- self-optimizing function modules
- condition monitoring
- mechatronics
- railway rolling stock
- self-adjusting systems
language:
- iso: eng
page: 15 -20
publication: 'Future Computing, Service Computation, Cognitive, Adaptive, Content,
Patterns, 2009. COMPUTATIONWORLD ''09. Computation World:'
status: public
title: Towards the Integration of Condition Monitoring in Self-Optimizing Function
Modules
type: conference
user_id: '55222'
year: '2009'
...
---
_id: '4152'
abstract:
- lang: eng
text: A novel technique to form periodically nanostructured Si surface morphologies
based on nanosphere lithography (NSL) and He ion implantation induced swelling
is studied in detail. It is shown that by implantation of keV He ions through
the nanometric openings of NSL masks regular arrays of hillocks and rings can
be created on silicon surfaces. The shape and size of these surface features can
be easily controlled by adjusting the ion dose and energy as well as the mask
size. Feature heights of more than 100 nm can be obtained, while feature distances
are typically 1.15 or 2 (hillock or ring) nanosphere radii, which are chosen to
be between 100 and 500 nm in this study. Atomic force and scanning electron microscopy
measurements of the surface morphology are supplemented by cross-sectional transmission
electron microscopy, revealing the inner structure of hillocks to consist of a
central cavity surrounded by a hierarchical arrangement of smaller voids. The
surface morphologies developed here have the potential to be useful for fixing
and separating nano-objects on a silicon surface.
article_number: 1181-DD10-02
article_type: original
author:
- first_name: Frederic J.C.
full_name: Fischer, Frederic J.C.
last_name: Fischer
- first_name: Michael
full_name: Weinl, Michael
last_name: Weinl
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Bernd
full_name: Stritzker, Bernd
last_name: Stritzker
citation:
ama: Fischer FJC, Weinl M, Lindner J, Stritzker B. Nanoscale Surface Patterning
of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks.
MRS Proceedings. 2009;1181. doi:10.1557/proc-1181-dd10-02
apa: Fischer, F. J. C., Weinl, M., Lindner, J., & Stritzker, B. (2009). Nanoscale
Surface Patterning of Silicon Using Local Swelling Induced by He Implantation
through NSL-Masks. MRS Proceedings, 1181. https://doi.org/10.1557/proc-1181-dd10-02
bibtex: '@article{Fischer_Weinl_Lindner_Stritzker_2009, title={Nanoscale Surface
Patterning of Silicon Using Local Swelling Induced by He Implantation through
NSL-Masks}, volume={1181}, DOI={10.1557/proc-1181-dd10-02},
number={1181-DD10-02}, journal={MRS Proceedings}, publisher={Cambridge University
Press (CUP)}, author={Fischer, Frederic J.C. and Weinl, Michael and Lindner, Jörg
and Stritzker, Bernd}, year={2009} }'
chicago: Fischer, Frederic J.C., Michael Weinl, Jörg Lindner, and Bernd Stritzker.
“Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation
through NSL-Masks.” MRS Proceedings 1181 (2009). https://doi.org/10.1557/proc-1181-dd10-02.
ieee: F. J. C. Fischer, M. Weinl, J. Lindner, and B. Stritzker, “Nanoscale Surface
Patterning of Silicon Using Local Swelling Induced by He Implantation through
NSL-Masks,” MRS Proceedings, vol. 1181, 2009.
mla: Fischer, Frederic J. C., et al. “Nanoscale Surface Patterning of Silicon Using
Local Swelling Induced by He Implantation through NSL-Masks.” MRS Proceedings,
vol. 1181, 1181-DD10-02, Cambridge University Press (CUP), 2009, doi:10.1557/proc-1181-dd10-02.
short: F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181
(2009).
conference:
end_date: 2009-04-17
location: San Franicsco (USA)
name: MRS Spring Meeting 2009
start_date: 2009-04-13
date_created: 2018-08-27T13:21:44Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '15'
- _id: '286'
doi: 10.1557/proc-1181-dd10-02
intvolume: ' 1181'
language:
- iso: eng
publication: MRS Proceedings
publication_identifier:
issn:
- 1946-4274
publication_status: published
publisher: Cambridge University Press (CUP)
status: public
title: Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He
Implantation through NSL-Masks
type: journal_article
user_id: '55706'
volume: 1181
year: '2009'
...
---
_id: '4180'
abstract:
- lang: eng
text: We show that an optically driven carrier spin undergoes indirect dephasing
even in the absence of spin-reservoir coupling and illustrate it for phonon-induced
decoherence during optical spin rotation in a single quantum dot.
article_number: NMA1
author:
- first_name: Anna
full_name: Grodecka, Anna
last_name: Grodecka
- first_name: Pawel
full_name: Machnikowski, Pawel
last_name: Machnikowski
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: 'Grodecka A, Machnikowski P, Förstner J. Indirect Dephasing Channel for Optically
Controlled Spin in a Single Quantum Dot. In: Advances in Optical Sciences Congress.
OSA Technical Digest (CD) (Optical Society of America, 2009); 2009. doi:10.1364/nlo.2009.nma1'
apa: Grodecka, A., Machnikowski, P., & Förstner, J. (2009). Indirect Dephasing
Channel for Optically Controlled Spin in a Single Quantum Dot. In Advances
in Optical Sciences Congress. OSA Technical Digest (CD) (Optical Society of
America, 2009). https://doi.org/10.1364/nlo.2009.nma1
bibtex: '@inproceedings{Grodecka_Machnikowski_Förstner_2009, title={Indirect Dephasing
Channel for Optically Controlled Spin in a Single Quantum Dot}, DOI={10.1364/nlo.2009.nma1},
number={NMA1}, booktitle={Advances in Optical Sciences Congress}, publisher={OSA
Technical Digest (CD) (Optical Society of America, 2009)}, author={Grodecka, Anna
and Machnikowski, Pawel and Förstner, Jens}, year={2009} }'
chicago: Grodecka, Anna, Pawel Machnikowski, and Jens Förstner. “Indirect Dephasing
Channel for Optically Controlled Spin in a Single Quantum Dot.” In Advances
in Optical Sciences Congress. OSA Technical Digest (CD) (Optical Society of
America, 2009), 2009. https://doi.org/10.1364/nlo.2009.nma1.
ieee: A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect Dephasing Channel
for Optically Controlled Spin in a Single Quantum Dot,” in Advances in Optical
Sciences Congress, 2009.
mla: Grodecka, Anna, et al. “Indirect Dephasing Channel for Optically Controlled
Spin in a Single Quantum Dot.” Advances in Optical Sciences Congress, NMA1,
OSA Technical Digest (CD) (Optical Society of America, 2009), 2009, doi:10.1364/nlo.2009.nma1.
short: 'A. Grodecka, P. Machnikowski, J. Förstner, in: Advances in Optical Sciences
Congress, OSA Technical Digest (CD) (Optical Society of America, 2009), 2009.'
date_created: 2018-08-28T09:22:42Z
date_updated: 2022-01-06T07:00:30Z
doi: 10.1364/nlo.2009.nma1
keyword:
- tet_topic_qd
language:
- iso: eng
publication: Advances in Optical Sciences Congress
publication_identifier:
isbn:
- '9781557528735'
publication_status: published
publisher: OSA Technical Digest (CD) (Optical Society of America, 2009)
status: public
title: Indirect Dephasing Channel for Optically Controlled Spin in a Single Quantum
Dot
type: conference
user_id: '55706'
year: '2009'
...
---
_id: '4182'
abstract:
- lang: eng
text: "We demonstrate that an optically driven spin of a carrier in a quantum dot
undergoes indirect dephasing via\r\nconditional optically induced charge evolution
even in the absence of any direct interaction between the spin\r\nand its environment.
A generic model for the indirect dephasing with a three-component system with
spin,\r\ncharge, and reservoir is proposed. This indirect decoherence channel
is studied for the optical spin manipulation\r\nin a quantum dot with a microscopic
description of the charge-phonon interaction taking into account its\r\nnon-Markovian
nature."
article_number: '042331'
article_type: original
author:
- first_name: A.
full_name: Grodecka, A.
last_name: Grodecka
- first_name: P.
full_name: Machnikowski, P.
last_name: Machnikowski
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Grodecka A, Machnikowski P, Förstner J. Indirect spin dephasing via charge-state
decoherence in optical control schemes in quantum dots. Physical Review A.
2009;79(4). doi:10.1103/physreva.79.042331
apa: Grodecka, A., Machnikowski, P., & Förstner, J. (2009). Indirect spin dephasing
via charge-state decoherence in optical control schemes in quantum dots. Physical
Review A, 79(4). https://doi.org/10.1103/physreva.79.042331
bibtex: '@article{Grodecka_Machnikowski_Förstner_2009, title={Indirect spin dephasing
via charge-state decoherence in optical control schemes in quantum dots}, volume={79},
DOI={10.1103/physreva.79.042331},
number={4042331}, journal={Physical Review A}, publisher={American Physical Society
(APS)}, author={Grodecka, A. and Machnikowski, P. and Förstner, Jens}, year={2009}
}'
chicago: Grodecka, A., P. Machnikowski, and Jens Förstner. “Indirect Spin Dephasing
via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” Physical
Review A 79, no. 4 (2009). https://doi.org/10.1103/physreva.79.042331.
ieee: A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect spin dephasing via
charge-state decoherence in optical control schemes in quantum dots,” Physical
Review A, vol. 79, no. 4, 2009.
mla: Grodecka, A., et al. “Indirect Spin Dephasing via Charge-State Decoherence
in Optical Control Schemes in Quantum Dots.” Physical Review A, vol. 79,
no. 4, 042331, American Physical Society (APS), 2009, doi:10.1103/physreva.79.042331.
short: A. Grodecka, P. Machnikowski, J. Förstner, Physical Review A 79 (2009).
date_created: 2018-08-28T09:32:32Z
date_updated: 2022-01-06T07:00:31Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1103/physreva.79.042331
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T09:33:22Z
date_updated: 2018-09-04T19:36:35Z
file_id: '4183'
file_name: 2009 Grodecka,Machnikowski,Förstner_Indirect spin dephasing via charge-state
decoherence in optical control schemes in quantum dots.pdf
file_size: 192120
relation: main_file
file_date_updated: 2018-09-04T19:36:35Z
has_accepted_license: '1'
intvolume: ' 79'
issue: '4'
keyword:
- tet_topic_qd
language:
- iso: eng
oa: '1'
publication: Physical Review A
publication_identifier:
issn:
- 1050-2947
- 1094-1622
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Indirect spin dephasing via charge-state decoherence in optical control schemes
in quantum dots
type: journal_article
urn: '41826'
user_id: '158'
volume: 79
year: '2009'
...
---
_id: '4192'
abstract:
- lang: eng
text: "Buried ion beam synthesized 3C-SiC layers were revealed to the surface of
silicon wafers to provide lattice matched substrates for GaN thin film epitaxy.
Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six-
or four-fold crystal symmetry, respectively, were formed. GaN thin film growth
was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing
to the energy and momentum transfer of the ions – allows to deposit epitaxial
thin films at particularly low growth temperatures where both the stable hexagonal
and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction
(XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate
fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe
grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga
rich growth conditions seem to stabilize the formation of the cubic polytype.
It is obvious from XTEM studies that the high density of crystal defects in the
SiC layer is not transferred onto the growing GaN films and that the crystalline
quality of GaN films improves with increasing film thickness. The influence of
surface roughness and wettability, interfacial cavities and the nucleation of
twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN
thin films is discussed."
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: J.W.
full_name: Gerlach, J.W.
last_name: Gerlach
- first_name: B.
full_name: Murphy, B.
last_name: Murphy
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization
of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of
Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048
apa: Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., & Stritzker, B.
(2009). Structural characterization of cubic and hexagonal GaN thin films grown
by IBA–MBE on SiC/Si. Journal of Crystal Growth, 312(6), 762–769.
https://doi.org/10.1016/j.jcrysgro.2009.12.048
bibtex: '@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si},
volume={312}, DOI={10.1016/j.jcrysgro.2009.12.048},
number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen,
M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009},
pages={762–769} }'
chicago: 'Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker.
“Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE
on SiC/Si.” Journal of Crystal Growth 312, no. 6 (2009): 762–69. https://doi.org/10.1016/j.jcrysgro.2009.12.048.'
ieee: M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,”
Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009.
mla: Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN
Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth, vol.
312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:10.1016/j.jcrysgro.2009.12.048.
short: M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of
Crystal Growth 312 (2009) 762–769.
date_created: 2018-08-28T11:50:05Z
date_updated: 2022-01-06T07:00:32Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2009.12.048
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:50:45Z
date_updated: 2018-08-28T11:50:45Z
file_id: '4193'
file_name: Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown
by IBA-MBE on SiC-Si.pdf
file_size: 828431
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:50:45Z
has_accepted_license: '1'
intvolume: ' 312'
issue: '6'
language:
- iso: eng
page: 762-769
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Structural characterization of cubic and hexagonal GaN thin films grown by
IBA–MBE on SiC/Si
type: journal_article
user_id: '55706'
volume: 312
year: '2009'
...
---
_id: '4196'
abstract:
- lang: eng
text: The growth of cubic group III-nitrides is a direct way to eliminate polarization
effects, which inherently limit the fabrication of normally-off heterojunction
field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated
of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular
beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of
3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural
properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD).
HFETs with normally off and normally-on characteristics were fabricated of cubic
AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed
to detect the electron channel at the c-AlGaN/GaN hetero interface.
article_type: original
author:
- first_name: Elena
full_name: Tschumak, Elena
last_name: Tschumak
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown
by MBE on Ar+implanted 3C-SiC (001). physica status solidi (c). 2009;7(1):104-107.
doi:10.1002/pssc.200982615
apa: Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M.,
& As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted
3C-SiC (001). Physica Status Solidi (C), 7(1), 104–107. https://doi.org/10.1002/pssc.200982615
bibtex: '@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar
cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7},
DOI={10.1002/pssc.200982615},
number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak,
Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe,
M. and As, Donald}, year={2009}, pages={104–107} }'
chicago: 'Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M.
Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C) 7, no. 1 (2009): 104–7. https://doi.org/10.1002/pssc.200982615.'
ieee: E. Tschumak et al., “Non-polar cubic AlGaN/GaN HFETs grown by MBE on
Ar+implanted 3C-SiC (001),” physica status solidi (c), vol. 7, no. 1, pp.
104–107, 2009.
mla: Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C), vol. 7, no. 1, Wiley, 2009, pp.
104–07, doi:10.1002/pssc.200982615.
short: E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As,
Physica Status Solidi (C) 7 (2009) 104–107.
date_created: 2018-08-28T12:15:20Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1002/pssc.200982615
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:16:11Z
date_updated: 2018-08-28T12:16:11Z
file_id: '4197'
file_name: Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf
file_size: 213837
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:16:11Z
has_accepted_license: '1'
intvolume: ' 7'
issue: '1'
language:
- iso: eng
page: 104-107
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
- 1610-1642
publication_status: published
publisher: Wiley
status: public
title: Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)
type: journal_article
user_id: '55706'
volume: 7
year: '2009'
...
---
_id: '4198'
abstract:
- lang: eng
text: Three-dimensional (3D) photonic crystal exhibit direction-selective transmission
with respect to the center frequency of the stop gap. As a model system, the stop
gap of a 3D fcc inverted-opal photonic crystal is studied in the microwave regime
in detail using 3D polyamide models. The difference in the direction-selective
transmittance between crystals grown in two different high symmetry directions
is experimentally shown and compared to numerical simulations.
article_type: original
author:
- first_name: J.
full_name: Üpping, J.
last_name: Üpping
- first_name: P.T.
full_name: Miclea, P.T.
last_name: Miclea
- first_name: R.B.
full_name: Wehrspohn, R.B.
last_name: Wehrspohn
- first_name: T.
full_name: Baumgarten, T.
last_name: Baumgarten
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
citation:
ama: Üpping J, Miclea PT, Wehrspohn RB, Baumgarten T, Greulich-Weber S. Direction-selective
optical transmission of 3D fcc photonic crystals in the microwave regime. Photonics
and Nanostructures - Fundamentals and Applications. 2009;8(2):102-106. doi:10.1016/j.photonics.2009.11.002
apa: Üpping, J., Miclea, P. T., Wehrspohn, R. B., Baumgarten, T., & Greulich-Weber,
S. (2009). Direction-selective optical transmission of 3D fcc photonic crystals
in the microwave regime. Photonics and Nanostructures - Fundamentals and Applications,
8(2), 102–106. https://doi.org/10.1016/j.photonics.2009.11.002
bibtex: '@article{Üpping_Miclea_Wehrspohn_Baumgarten_Greulich-Weber_2009, title={Direction-selective
optical transmission of 3D fcc photonic crystals in the microwave regime}, volume={8},
DOI={10.1016/j.photonics.2009.11.002},
number={2}, journal={Photonics and Nanostructures - Fundamentals and Applications},
publisher={Elsevier BV}, author={Üpping, J. and Miclea, P.T. and Wehrspohn, R.B.
and Baumgarten, T. and Greulich-Weber, Siegmund}, year={2009}, pages={102–106}
}'
chicago: 'Üpping, J., P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, and Siegmund Greulich-Weber.
“Direction-Selective Optical Transmission of 3D Fcc Photonic Crystals in the Microwave
Regime.” Photonics and Nanostructures - Fundamentals and Applications 8,
no. 2 (2009): 102–6. https://doi.org/10.1016/j.photonics.2009.11.002.'
ieee: J. Üpping, P. T. Miclea, R. B. Wehrspohn, T. Baumgarten, and S. Greulich-Weber,
“Direction-selective optical transmission of 3D fcc photonic crystals in the microwave
regime,” Photonics and Nanostructures - Fundamentals and Applications,
vol. 8, no. 2, pp. 102–106, 2009.
mla: Üpping, J., et al. “Direction-Selective Optical Transmission of 3D Fcc Photonic
Crystals in the Microwave Regime.” Photonics and Nanostructures - Fundamentals
and Applications, vol. 8, no. 2, Elsevier BV, 2009, pp. 102–06, doi:10.1016/j.photonics.2009.11.002.
short: J. Üpping, P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, S. Greulich-Weber,
Photonics and Nanostructures - Fundamentals and Applications 8 (2009) 102–106.
date_created: 2018-08-28T12:19:16Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.photonics.2009.11.002
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:19:51Z
date_updated: 2018-08-28T12:19:51Z
file_id: '4199'
file_name: Direction-selective optical transmission of 3D fcc photonic crystals
in the microwave regime.pdf
file_size: 310534
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:19:51Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '2'
language:
- iso: eng
page: 102-106
publication: Photonics and Nanostructures - Fundamentals and Applications
publication_identifier:
issn:
- 1569-4410
publication_status: published
publisher: Elsevier BV
status: public
title: Direction-selective optical transmission of 3D fcc photonic crystals in the
microwave regime
type: journal_article
user_id: '55706'
volume: 8
year: '2009'
...
---
_id: '4219'
abstract:
- lang: eng
text: 'The solar cell concept presented here is based on 3C-SiC nano- or microwires
and conju¬gated polymers. Therefore the silicon carbide wires are fabricated by
a sol-gel route including a car-bothermal reduction step, allowing growth with
predetermined uniform diameters between 0.1 and 2μm and lengths up to several
centimetres. The design of our photovoltaic device is therein based on a p-i-n
structure, well known e.g. from silicon photovoltaics, involving an intrinsic
semiconduc¬tor as the central photoactive layer, sandwiched between two complementary
doped wide-bandgap semiconductors giving the driving force for charge separation.
In our case the 3C-SiC microwires act as the electron acceptor and simultaneously
as carrier material for all involved components of the photovoltaic element. '
article_type: original
author:
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
- first_name: M.
full_name: Zöller, M.
last_name: Zöller
- first_name: B.
full_name: Friedel, B.
last_name: Friedel
citation:
ama: Greulich-Weber S, Zöller M, Friedel B. Textile Solar Cells Based on SiC Microwires.
Materials Science Forum. 2009;615-617:239-242. doi:10.4028/www.scientific.net/msf.615-617.239
apa: Greulich-Weber, S., Zöller, M., & Friedel, B. (2009). Textile Solar Cells
Based on SiC Microwires. Materials Science Forum, 615–617,
239–242. https://doi.org/10.4028/www.scientific.net/msf.615-617.239
bibtex: '@article{Greulich-Weber_Zöller_Friedel_2009, title={Textile Solar Cells
Based on SiC Microwires}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.239},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber,
Siegmund and Zöller, M. and Friedel, B.}, year={2009}, pages={239–242} }'
chicago: 'Greulich-Weber, Siegmund, M. Zöller, and B. Friedel. “Textile Solar Cells
Based on SiC Microwires.” Materials Science Forum 615–617 (2009): 239–42.
https://doi.org/10.4028/www.scientific.net/msf.615-617.239.'
ieee: S. Greulich-Weber, M. Zöller, and B. Friedel, “Textile Solar Cells Based on
SiC Microwires,” Materials Science Forum, vol. 615–617, pp. 239–242, 2009.
mla: Greulich-Weber, Siegmund, et al. “Textile Solar Cells Based on SiC Microwires.”
Materials Science Forum, vol. 615–617, Trans Tech Publications, 2009, pp.
239–42, doi:10.4028/www.scientific.net/msf.615-617.239.
short: S. Greulich-Weber, M. Zöller, B. Friedel, Materials Science Forum 615–617
(2009) 239–242.
date_created: 2018-08-28T13:00:44Z
date_updated: 2022-01-06T07:00:38Z
department:
- _id: '15'
doi: 10.4028/www.scientific.net/msf.615-617.239
language:
- iso: eng
page: 239-242
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: Textile Solar Cells Based on SiC Microwires
type: journal_article
user_id: '55706'
volume: 615-617
year: '2009'
...
---
_id: '4220'
abstract:
- lang: eng
text: 'We report on constructive methods providing a large range of high purity
porous SiC products. All methods are based on modified sol-gel processes combined
with carbothermal re¬duction. We obtain monodisperse regular pores of well defined
diameters by using carbon sphere templates which are removed after SiC infiltration.
A different way is a sol-gel based conversion of graphite bodies into SiC, which
transfers the porosity from the graphite matrix into the final SiC product. Thus
a large variety of porosity features are available, originating either from natural
poro¬sity of graphite or from priorly created nano-/ microstructures in the carbonaceous
base material. Whereas all our pristine porous sol-gel derived silicon carbide
products are semi-insulating, doping is possible, during the growth to modifiy
the electrical and optical properties. '
article_type: original
author:
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
- first_name: B.
full_name: Friedel, B.
last_name: Friedel
citation:
ama: Greulich-Weber S, Friedel B. Bottom-Up Routes to Porous Silicon Carbide. Materials
Science Forum. 2009;615-617:637-640. doi:10.4028/www.scientific.net/msf.615-617.637
apa: Greulich-Weber, S., & Friedel, B. (2009). Bottom-Up Routes to Porous Silicon
Carbide. Materials Science Forum, 615–617, 637–640. https://doi.org/10.4028/www.scientific.net/msf.615-617.637
bibtex: '@article{Greulich-Weber_Friedel_2009, title={Bottom-Up Routes to Porous
Silicon Carbide}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.637},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber,
Siegmund and Friedel, B.}, year={2009}, pages={637–640} }'
chicago: 'Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous
Silicon Carbide.” Materials Science Forum 615–617 (2009): 637–40. https://doi.org/10.4028/www.scientific.net/msf.615-617.637.'
ieee: S. Greulich-Weber and B. Friedel, “Bottom-Up Routes to Porous Silicon Carbide,”
Materials Science Forum, vol. 615–617, pp. 637–640, 2009.
mla: Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous Silicon
Carbide.” Materials Science Forum, vol. 615–617, Trans Tech Publications,
2009, pp. 637–40, doi:10.4028/www.scientific.net/msf.615-617.637.
short: S. Greulich-Weber, B. Friedel, Materials Science Forum 615–617 (2009) 637–640.
date_created: 2018-08-28T13:02:05Z
date_updated: 2022-01-06T07:00:38Z
department:
- _id: '15'
doi: 10.4028/www.scientific.net/msf.615-617.637
language:
- iso: eng
page: 637-640
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: Bottom-Up Routes to Porous Silicon Carbide
type: journal_article
user_id: '55706'
volume: 615-617
year: '2009'
...
---
_id: '4221'
abstract:
- lang: eng
text: "Nanopatterning of silicon surfaces by means of He+ ion implantation through
self-organized colloidal\r\nmasks is reported for the first time. Nanosphere lithography
(NSL) masks with mask openings of 46–\r\n230 nm width were deposited on Si(100)
wafers. He+ ions were implanted through these masks in order\r\nto induce a local
cavity formation and Si surface swelling. The surface morphology and the subsurface\r\nstructure
were studied using atomic force microscopy (AFM) and cross-sectional transmission
electron\r\nmicroscopy (XTEM), respectively, as a function of mask and implantation
parameters. It is demonstrated\r\nthat regular arrays of both individual hillocks
and trough-like circular rings can be generated."
article_type: original
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: C.
full_name: Seider, C.
last_name: Seider
- first_name: F.
full_name: Fischer, F.
last_name: Fischer
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: 'Lindner J, Seider C, Fischer F, Weinl M, Stritzker B. Regular surface patterns
by local swelling induced by He implantation into silicon through nanosphere lithography
masks. Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms. 2009;267(8-9):1394-1397. doi:10.1016/j.nimb.2009.01.052'
apa: 'Lindner, J., Seider, C., Fischer, F., Weinl, M., & Stritzker, B. (2009).
Regular surface patterns by local swelling induced by He implantation into silicon
through nanosphere lithography masks. Nuclear Instruments and Methods in Physics
Research Section B: Beam Interactions with Materials and Atoms, 267(8–9),
1394–1397. https://doi.org/10.1016/j.nimb.2009.01.052'
bibtex: '@article{Lindner_Seider_Fischer_Weinl_Stritzker_2009, title={Regular surface
patterns by local swelling induced by He implantation into silicon through nanosphere
lithography masks}, volume={267}, DOI={10.1016/j.nimb.2009.01.052},
number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lindner,
Jörg and Seider, C. and Fischer, F. and Weinl, M. and Stritzker, B.}, year={2009},
pages={1394–1397} }'
chicago: 'Lindner, Jörg, C. Seider, F. Fischer, M. Weinl, and B. Stritzker. “Regular
Surface Patterns by Local Swelling Induced by He Implantation into Silicon through
Nanosphere Lithography Masks.” Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms 267, no. 8–9 (2009):
1394–97. https://doi.org/10.1016/j.nimb.2009.01.052.'
ieee: 'J. Lindner, C. Seider, F. Fischer, M. Weinl, and B. Stritzker, “Regular surface
patterns by local swelling induced by He implantation into silicon through nanosphere
lithography masks,” Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms, vol. 267, no. 8–9, pp. 1394–1397,
2009.'
mla: 'Lindner, Jörg, et al. “Regular Surface Patterns by Local Swelling Induced
by He Implantation into Silicon through Nanosphere Lithography Masks.” Nuclear
Instruments and Methods in Physics Research Section B: Beam Interactions with
Materials and Atoms, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1394–97, doi:10.1016/j.nimb.2009.01.052.'
short: 'J. Lindner, C. Seider, F. Fischer, M. Weinl, B. Stritzker, Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms 267 (2009) 1394–1397.'
date_created: 2018-08-28T13:04:23Z
date_updated: 2022-01-06T07:00:38Z
ddc:
- '530'
doi: 10.1016/j.nimb.2009.01.052
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:05:32Z
date_updated: 2018-08-28T13:05:32Z
file_id: '4222'
file_name: Regular Silicon Surface Patterns by Local Swelling Induced by He Implantation
through Nanosphere Lithography Masks.pdf
file_size: 467219
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:05:32Z
has_accepted_license: '1'
intvolume: ' 267'
issue: 8-9
language:
- iso: eng
page: 1394-1397
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Regular surface patterns by local swelling induced by He implantation into
silicon through nanosphere lithography masks
type: journal_article
user_id: '55706'
volume: 267
year: '2009'
...
---
_id: '4223'
abstract:
- lang: eng
text: "The formation of a thick protective oxide layer on NiTi by plasma immersion
ion implantation (PIII) for\r\nmedical devices is an established technology on
the laboratory scale. It is shown here that by pre-implantation\r\nwith either
180 keV Ni or low fluence of 190 MeV Au ions, a radiation suppressed growth of
the\r\noxide layer of up to 40% is observed. At higher Au fluence and higher PIII
temperatures, this changes into\r\nan enhancement of 25–40%. Different amorphisation
mechanisms or disorder formation is proposed as\r\nthe underlying effect."
article_type: original
author:
- first_name: J.
full_name: Lutz, J.
last_name: Lutz
- first_name: J.W.
full_name: Gerlach, J.W.
last_name: Gerlach
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W.
full_name: Assmann, W.
last_name: Assmann
- first_name: S.
full_name: Mändl, S.
last_name: Mändl
citation:
ama: 'Lutz J, Gerlach JW, Lindner J, Assmann W, Mändl S. Radiation suppressed oxide
growth in the system Ni–Ti–O. Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms. 2009;267(8-9):1634-1637.
doi:10.1016/j.nimb.2009.01.068'
apa: 'Lutz, J., Gerlach, J. W., Lindner, J., Assmann, W., & Mändl, S. (2009).
Radiation suppressed oxide growth in the system Ni–Ti–O. Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms, 267(8–9), 1634–1637. https://doi.org/10.1016/j.nimb.2009.01.068'
bibtex: '@article{Lutz_Gerlach_Lindner_Assmann_Mändl_2009, title={Radiation suppressed
oxide growth in the system Ni–Ti–O}, volume={267}, DOI={10.1016/j.nimb.2009.01.068},
number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lutz,
J. and Gerlach, J.W. and Lindner, Jörg and Assmann, W. and Mändl, S.}, year={2009},
pages={1634–1637} }'
chicago: 'Lutz, J., J.W. Gerlach, Jörg Lindner, W. Assmann, and S. Mändl. “Radiation
Suppressed Oxide Growth in the System Ni–Ti–O.” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms
267, no. 8–9 (2009): 1634–37. https://doi.org/10.1016/j.nimb.2009.01.068.'
ieee: 'J. Lutz, J. W. Gerlach, J. Lindner, W. Assmann, and S. Mändl, “Radiation
suppressed oxide growth in the system Ni–Ti–O,” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms,
vol. 267, no. 8–9, pp. 1634–1637, 2009.'
mla: 'Lutz, J., et al. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.”
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1634–37,
doi:10.1016/j.nimb.2009.01.068.'
short: 'J. Lutz, J.W. Gerlach, J. Lindner, W. Assmann, S. Mändl, Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms 267 (2009) 1634–1637.'
date_created: 2018-08-28T13:07:17Z
date_updated: 2022-01-06T07:00:39Z
ddc:
- '530'
doi: 10.1016/j.nimb.2009.01.068
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:07:49Z
date_updated: 2018-08-28T13:07:49Z
file_id: '4224'
file_name: Radiation Suppressed Diffusion in the System Ni-Ti-O.pdf
file_size: 342798
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:07:49Z
has_accepted_license: '1'
intvolume: ' 267'
issue: 8-9
language:
- iso: eng
page: 1634-1637
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Radiation suppressed oxide growth in the system Ni–Ti–O
type: journal_article
user_id: '55706'
volume: 267
year: '2009'
...
---
_id: '4225'
abstract:
- lang: eng
text: EPR and ESE in nitrogen doped 4H- and 6H-SiC show besides the well known triplet
lines of 14N on quasi-cubic (Nc,k) and hexagonal (Nc,h) sites additional lines
(Nx) of comparatively low intensity providing half the hf splitting of Nc,k. Frequently
re-interpreted as spin-forbidden lines, arising from Nc,k pairs and triads or
resulting from hopping conductivity, only recently the theoretical calculation
of the corresponding g-tensors lead to a tentative model of distant NC donor pairs
on inequivalent lattice sites which are coupled to S = 1 assuming a fine-structure
splitting too small to be observed in the EPR and ESE experiments. In this work,
we present ESE nutation measurements confirming S = 1 for the Nx center. Analysing
the nutation frequencies in comparison with that of the Nc,k (S = 1/2) spectrum
as well as the line width of ESE and EPR spectra we obtain a rough estimate between
5×104 cm-1 and 50×104 cm-1 for the fine-structure splitting demonstrating efficient
spin-coupling between nitrogen donors in 4H-SiC.
article_type: original
author:
- first_name: D.V.
full_name: Savchenko, D.V.
last_name: Savchenko
- first_name: Andreas
full_name: Pöppl, Andreas
last_name: Pöppl
- first_name: Ekaterina N.
full_name: Kalabukhova, Ekaterina N.
last_name: Kalabukhova
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
- first_name: Eva
full_name: Rauls, Eva
last_name: Rauls
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
last_name: Schmidt
- first_name: Uwe
full_name: Gerstmann, Uwe
last_name: Gerstmann
citation:
ama: Savchenko DV, Pöppl A, Kalabukhova EN, et al. Spin-Coupling in Heavily Nitrogen-Doped
4H-SiC. Materials Science Forum. 2009;615-617:343-346. doi:10.4028/www.scientific.net/msf.615-617.343
apa: Savchenko, D. V., Pöppl, A., Kalabukhova, E. N., Greulich-Weber, S., Rauls,
E., Schmidt, W. G., & Gerstmann, U. (2009). Spin-Coupling in Heavily Nitrogen-Doped
4H-SiC. Materials Science Forum, 615–617, 343–346. https://doi.org/10.4028/www.scientific.net/msf.615-617.343
bibtex: '@article{Savchenko_Pöppl_Kalabukhova_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009,
title={Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.343},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Savchenko,
D.V. and Pöppl, Andreas and Kalabukhova, Ekaterina N. and Greulich-Weber, Siegmund
and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2009}, pages={343–346}
}'
chicago: 'Savchenko, D.V., Andreas Pöppl, Ekaterina N. Kalabukhova, Siegmund Greulich-Weber,
Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Spin-Coupling in Heavily Nitrogen-Doped
4H-SiC.” Materials Science Forum 615–617 (2009): 343–46. https://doi.org/10.4028/www.scientific.net/msf.615-617.343.'
ieee: D. V. Savchenko et al., “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC,”
Materials Science Forum, vol. 615–617, pp. 343–346, 2009.
mla: Savchenko, D. V., et al. “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC.”
Materials Science Forum, vol. 615–617, Trans Tech Publications, 2009, pp.
343–46, doi:10.4028/www.scientific.net/msf.615-617.343.
short: D.V. Savchenko, A. Pöppl, E.N. Kalabukhova, S. Greulich-Weber, E. Rauls,
W.G. Schmidt, U. Gerstmann, Materials Science Forum 615–617 (2009) 343–346.
date_created: 2018-08-28T13:09:27Z
date_updated: 2022-01-06T07:00:39Z
department:
- _id: '15'
doi: 10.4028/www.scientific.net/msf.615-617.343
language:
- iso: eng
page: 343-346
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC
type: journal_article
user_id: '55706'
volume: 615-617
year: '2009'
...
---
_id: '4226'
abstract:
- lang: eng
text: "In non-annealed 6H-SiC samples that were electron irradiated at low temperature,
a new EPR signal due to a\r\nS =1 defect center with exceptionally large zero-field
splitting (D= +652\x0210\x034cm\x031,E=\x038\x0210\x034cm\x031) has been observed
under illumination. A positive sign of D demonstrates that the spin–orbit contribution
to the zero-field splitting exceeds by far that of the spin–spin interaction.
A principal axis of the fine-structure tilted by 59 1 against the crystal\r\nc
-axis as well as the exceptionally high zero-field splitting D can be qualitatively
understood by the occurrence of additional close-lying defect levels in defect
clusters resulting in comparatively large second-order spin–orbit coupling. A
tentative assignment to vacancy clusters is supported by the observed annealing
behavior."
article_type: original
author:
- first_name: A.
full_name: Scholle, A.
last_name: Scholle
- first_name: S.
full_name: Greulich-Weber, S.
last_name: Greulich-Weber
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: W.G.
full_name: Schmidt, W.G.
last_name: Schmidt
- first_name: U.
full_name: Gerstmann, U.
last_name: Gerstmann
citation:
ama: 'Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Vacancy clusters
created via room temperature irradiation in 6H-SiC. Physica B: Condensed Matter.
2009;404(23-24):4742-4744. doi:10.1016/j.physb.2009.08.123'
apa: 'Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., & Gerstmann,
U. (2009). Vacancy clusters created via room temperature irradiation in 6H-SiC.
Physica B: Condensed Matter, 404(23–24), 4742–4744. https://doi.org/10.1016/j.physb.2009.08.123'
bibtex: '@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy
clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={10.1016/j.physb.2009.08.123},
number={23–24}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV},
author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, W.G. and
Gerstmann, U.}, year={2009}, pages={4742–4744} }'
chicago: 'Scholle, A., S. Greulich-Weber, E. Rauls, W.G. Schmidt, and U. Gerstmann.
“Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” Physica
B: Condensed Matter 404, no. 23–24 (2009): 4742–44. https://doi.org/10.1016/j.physb.2009.08.123.'
ieee: 'A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann,
“Vacancy clusters created via room temperature irradiation in 6H-SiC,” Physica
B: Condensed Matter, vol. 404, no. 23–24, pp. 4742–4744, 2009.'
mla: 'Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation
in 6H-SiC.” Physica B: Condensed Matter, vol. 404, no. 23–24, Elsevier
BV, 2009, pp. 4742–44, doi:10.1016/j.physb.2009.08.123.'
short: 'A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Physica
B: Condensed Matter 404 (2009) 4742–4744.'
date_created: 2018-08-28T13:11:31Z
date_updated: 2022-01-06T07:00:39Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.physb.2009.08.123
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:12:36Z
date_updated: 2018-08-28T13:12:36Z
file_id: '4227'
file_name: Vacancy clusters created via room temperature irradiation in 6H-SiC.pdf
file_size: 223477
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:12:36Z
has_accepted_license: '1'
intvolume: ' 404'
issue: 23-24
language:
- iso: eng
page: 4742-4744
publication: 'Physica B: Condensed Matter'
publication_identifier:
issn:
- 0921-4526
publication_status: published
publisher: Elsevier BV
status: public
title: Vacancy clusters created via room temperature irradiation in 6H-SiC
type: journal_article
user_id: '55706'
volume: 404
year: '2009'
...