---
_id: '4182'
abstract:
- lang: eng
text: "We demonstrate that an optically driven spin of a carrier in a quantum dot
undergoes indirect dephasing via\r\nconditional optically induced charge evolution
even in the absence of any direct interaction between the spin\r\nand its environment.
A generic model for the indirect dephasing with a three-component system with
spin,\r\ncharge, and reservoir is proposed. This indirect decoherence channel
is studied for the optical spin manipulation\r\nin a quantum dot with a microscopic
description of the charge-phonon interaction taking into account its\r\nnon-Markovian
nature."
article_number: '042331'
article_type: original
author:
- first_name: A.
full_name: Grodecka, A.
last_name: Grodecka
- first_name: P.
full_name: Machnikowski, P.
last_name: Machnikowski
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Grodecka A, Machnikowski P, Förstner J. Indirect spin dephasing via charge-state
decoherence in optical control schemes in quantum dots. Physical Review A.
2009;79(4). doi:10.1103/physreva.79.042331
apa: Grodecka, A., Machnikowski, P., & Förstner, J. (2009). Indirect spin dephasing
via charge-state decoherence in optical control schemes in quantum dots. Physical
Review A, 79(4). https://doi.org/10.1103/physreva.79.042331
bibtex: '@article{Grodecka_Machnikowski_Förstner_2009, title={Indirect spin dephasing
via charge-state decoherence in optical control schemes in quantum dots}, volume={79},
DOI={10.1103/physreva.79.042331},
number={4042331}, journal={Physical Review A}, publisher={American Physical Society
(APS)}, author={Grodecka, A. and Machnikowski, P. and Förstner, Jens}, year={2009}
}'
chicago: Grodecka, A., P. Machnikowski, and Jens Förstner. “Indirect Spin Dephasing
via Charge-State Decoherence in Optical Control Schemes in Quantum Dots.” Physical
Review A 79, no. 4 (2009). https://doi.org/10.1103/physreva.79.042331.
ieee: A. Grodecka, P. Machnikowski, and J. Förstner, “Indirect spin dephasing via
charge-state decoherence in optical control schemes in quantum dots,” Physical
Review A, vol. 79, no. 4, 2009.
mla: Grodecka, A., et al. “Indirect Spin Dephasing via Charge-State Decoherence
in Optical Control Schemes in Quantum Dots.” Physical Review A, vol. 79,
no. 4, 042331, American Physical Society (APS), 2009, doi:10.1103/physreva.79.042331.
short: A. Grodecka, P. Machnikowski, J. Förstner, Physical Review A 79 (2009).
date_created: 2018-08-28T09:32:32Z
date_updated: 2022-01-06T07:00:31Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1103/physreva.79.042331
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T09:33:22Z
date_updated: 2018-09-04T19:36:35Z
file_id: '4183'
file_name: 2009 Grodecka,Machnikowski,Förstner_Indirect spin dephasing via charge-state
decoherence in optical control schemes in quantum dots.pdf
file_size: 192120
relation: main_file
file_date_updated: 2018-09-04T19:36:35Z
has_accepted_license: '1'
intvolume: ' 79'
issue: '4'
keyword:
- tet_topic_qd
language:
- iso: eng
oa: '1'
publication: Physical Review A
publication_identifier:
issn:
- 1050-2947
- 1094-1622
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Indirect spin dephasing via charge-state decoherence in optical control schemes
in quantum dots
type: journal_article
urn: '41826'
user_id: '158'
volume: 79
year: '2009'
...
---
_id: '4192'
abstract:
- lang: eng
text: "Buried ion beam synthesized 3C-SiC layers were revealed to the surface of
silicon wafers to provide lattice matched substrates for GaN thin film epitaxy.
Both epitaxial SiC/Si(1 1 1) and SiC/Si(0 0 1) growth surfaces with either six-
or four-fold crystal symmetry, respectively, were formed. GaN thin film growth
was achieved by ion beam assisted molecular beam epitaxy (IBA–MBE) which – owing
to the energy and momentum transfer of the ions – allows to deposit epitaxial
thin films at particularly low growth temperatures where both the stable hexagonal
and the metastable cubic polytype of GaN can be formed. It is shown by X-ray diffraction
(XRD) and cross-sectional transmission electron microscopy (XTEM) that using appropriate
fluxes of Ga atoms both purely hexagonal and purely cubic GaN films can\r\nbe
grown epitaxially on SiC/Si(1 1 1) and SiC/Si(0 0 1), respectively. Thereby Ga
rich growth conditions seem to stabilize the formation of the cubic polytype.
It is obvious from XTEM studies that the high density of crystal defects in the
SiC layer is not transferred onto the growing GaN films and that the crystalline
quality of GaN films improves with increasing film thickness. The influence of
surface roughness and wettability, interfacial cavities and the nucleation of
twin-type defects at the GaN/SiC interface on the crystalline quality of the GaN
thin films is discussed."
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: J.W.
full_name: Gerlach, J.W.
last_name: Gerlach
- first_name: B.
full_name: Murphy, B.
last_name: Murphy
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: Häberlen M, Gerlach JW, Murphy B, Lindner J, Stritzker B. Structural characterization
of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si. Journal of
Crystal Growth. 2009;312(6):762-769. doi:10.1016/j.jcrysgro.2009.12.048
apa: Häberlen, M., Gerlach, J. W., Murphy, B., Lindner, J., & Stritzker, B.
(2009). Structural characterization of cubic and hexagonal GaN thin films grown
by IBA–MBE on SiC/Si. Journal of Crystal Growth, 312(6), 762–769.
https://doi.org/10.1016/j.jcrysgro.2009.12.048
bibtex: '@article{Häberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title={Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si},
volume={312}, DOI={10.1016/j.jcrysgro.2009.12.048},
number={6}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Häberlen,
M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B.}, year={2009},
pages={762–769} }'
chicago: 'Häberlen, M., J.W. Gerlach, B. Murphy, Jörg Lindner, and B. Stritzker.
“Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown by IBA–MBE
on SiC/Si.” Journal of Crystal Growth 312, no. 6 (2009): 762–69. https://doi.org/10.1016/j.jcrysgro.2009.12.048.'
ieee: M. Häberlen, J. W. Gerlach, B. Murphy, J. Lindner, and B. Stritzker, “Structural
characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si,”
Journal of Crystal Growth, vol. 312, no. 6, pp. 762–769, 2009.
mla: Häberlen, M., et al. “Structural Characterization of Cubic and Hexagonal GaN
Thin Films Grown by IBA–MBE on SiC/Si.” Journal of Crystal Growth, vol.
312, no. 6, Elsevier BV, 2009, pp. 762–69, doi:10.1016/j.jcrysgro.2009.12.048.
short: M. Häberlen, J.W. Gerlach, B. Murphy, J. Lindner, B. Stritzker, Journal of
Crystal Growth 312 (2009) 762–769.
date_created: 2018-08-28T11:50:05Z
date_updated: 2022-01-06T07:00:32Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.jcrysgro.2009.12.048
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:50:45Z
date_updated: 2018-08-28T11:50:45Z
file_id: '4193'
file_name: Structural Characterization of Cubic and Hexagonal GaN Thin Films Grown
by IBA-MBE on SiC-Si.pdf
file_size: 828431
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:50:45Z
has_accepted_license: '1'
intvolume: ' 312'
issue: '6'
language:
- iso: eng
page: 762-769
publication: Journal of Crystal Growth
publication_identifier:
issn:
- 0022-0248
publication_status: published
publisher: Elsevier BV
status: public
title: Structural characterization of cubic and hexagonal GaN thin films grown by
IBA–MBE on SiC/Si
type: journal_article
user_id: '55706'
volume: 312
year: '2009'
...
---
_id: '4196'
abstract:
- lang: eng
text: The growth of cubic group III-nitrides is a direct way to eliminate polarization
effects, which inherently limit the fabrication of normally-off heterojunction
field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated
of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular
beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of
3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural
properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD).
HFETs with normally off and normally-on characteristics were fabricated of cubic
AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed
to detect the electron channel at the c-AlGaN/GaN hetero interface.
article_type: original
author:
- first_name: Elena
full_name: Tschumak, Elena
last_name: Tschumak
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Lindner J, Bürger M, et al. Non-polar cubic AlGaN/GaN HFETs grown
by MBE on Ar+implanted 3C-SiC (001). physica status solidi (c). 2009;7(1):104-107.
doi:10.1002/pssc.200982615
apa: Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M.,
& As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted
3C-SiC (001). Physica Status Solidi (C), 7(1), 104–107. https://doi.org/10.1002/pssc.200982615
bibtex: '@article{Tschumak_Lindner_Bürger_Lischka_Nagasawa_Abe_As_2009, title={Non-polar
cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)}, volume={7},
DOI={10.1002/pssc.200982615},
number={1}, journal={physica status solidi (c)}, publisher={Wiley}, author={Tschumak,
Elena and Lindner, Jörg and Bürger, M. and Lischka, K. and Nagasawa, H. and Abe,
M. and As, Donald}, year={2009}, pages={104–107} }'
chicago: 'Tschumak, Elena, Jörg Lindner, M. Bürger, K. Lischka, H. Nagasawa, M.
Abe, and Donald As. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C) 7, no. 1 (2009): 104–7. https://doi.org/10.1002/pssc.200982615.'
ieee: E. Tschumak et al., “Non-polar cubic AlGaN/GaN HFETs grown by MBE on
Ar+implanted 3C-SiC (001),” physica status solidi (c), vol. 7, no. 1, pp.
104–107, 2009.
mla: Tschumak, Elena, et al. “Non-Polar Cubic AlGaN/GaN HFETs Grown by MBE on Ar+implanted
3C-SiC (001).” Physica Status Solidi (C), vol. 7, no. 1, Wiley, 2009, pp.
104–07, doi:10.1002/pssc.200982615.
short: E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As,
Physica Status Solidi (C) 7 (2009) 104–107.
date_created: 2018-08-28T12:15:20Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1002/pssc.200982615
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:16:11Z
date_updated: 2018-08-28T12:16:11Z
file_id: '4197'
file_name: Nonpolar cubic AlGaN-GaN HFETs grown by MBE on Ar+ implanted 3C SiC (001).pdf
file_size: 213837
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:16:11Z
has_accepted_license: '1'
intvolume: ' 7'
issue: '1'
language:
- iso: eng
page: 104-107
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
- 1610-1642
publication_status: published
publisher: Wiley
status: public
title: Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)
type: journal_article
user_id: '55706'
volume: 7
year: '2009'
...
---
_id: '4198'
abstract:
- lang: eng
text: Three-dimensional (3D) photonic crystal exhibit direction-selective transmission
with respect to the center frequency of the stop gap. As a model system, the stop
gap of a 3D fcc inverted-opal photonic crystal is studied in the microwave regime
in detail using 3D polyamide models. The difference in the direction-selective
transmittance between crystals grown in two different high symmetry directions
is experimentally shown and compared to numerical simulations.
article_type: original
author:
- first_name: J.
full_name: Üpping, J.
last_name: Üpping
- first_name: P.T.
full_name: Miclea, P.T.
last_name: Miclea
- first_name: R.B.
full_name: Wehrspohn, R.B.
last_name: Wehrspohn
- first_name: T.
full_name: Baumgarten, T.
last_name: Baumgarten
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
citation:
ama: Üpping J, Miclea PT, Wehrspohn RB, Baumgarten T, Greulich-Weber S. Direction-selective
optical transmission of 3D fcc photonic crystals in the microwave regime. Photonics
and Nanostructures - Fundamentals and Applications. 2009;8(2):102-106. doi:10.1016/j.photonics.2009.11.002
apa: Üpping, J., Miclea, P. T., Wehrspohn, R. B., Baumgarten, T., & Greulich-Weber,
S. (2009). Direction-selective optical transmission of 3D fcc photonic crystals
in the microwave regime. Photonics and Nanostructures - Fundamentals and Applications,
8(2), 102–106. https://doi.org/10.1016/j.photonics.2009.11.002
bibtex: '@article{Üpping_Miclea_Wehrspohn_Baumgarten_Greulich-Weber_2009, title={Direction-selective
optical transmission of 3D fcc photonic crystals in the microwave regime}, volume={8},
DOI={10.1016/j.photonics.2009.11.002},
number={2}, journal={Photonics and Nanostructures - Fundamentals and Applications},
publisher={Elsevier BV}, author={Üpping, J. and Miclea, P.T. and Wehrspohn, R.B.
and Baumgarten, T. and Greulich-Weber, Siegmund}, year={2009}, pages={102–106}
}'
chicago: 'Üpping, J., P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, and Siegmund Greulich-Weber.
“Direction-Selective Optical Transmission of 3D Fcc Photonic Crystals in the Microwave
Regime.” Photonics and Nanostructures - Fundamentals and Applications 8,
no. 2 (2009): 102–6. https://doi.org/10.1016/j.photonics.2009.11.002.'
ieee: J. Üpping, P. T. Miclea, R. B. Wehrspohn, T. Baumgarten, and S. Greulich-Weber,
“Direction-selective optical transmission of 3D fcc photonic crystals in the microwave
regime,” Photonics and Nanostructures - Fundamentals and Applications,
vol. 8, no. 2, pp. 102–106, 2009.
mla: Üpping, J., et al. “Direction-Selective Optical Transmission of 3D Fcc Photonic
Crystals in the Microwave Regime.” Photonics and Nanostructures - Fundamentals
and Applications, vol. 8, no. 2, Elsevier BV, 2009, pp. 102–06, doi:10.1016/j.photonics.2009.11.002.
short: J. Üpping, P.T. Miclea, R.B. Wehrspohn, T. Baumgarten, S. Greulich-Weber,
Photonics and Nanostructures - Fundamentals and Applications 8 (2009) 102–106.
date_created: 2018-08-28T12:19:16Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.photonics.2009.11.002
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T12:19:51Z
date_updated: 2018-08-28T12:19:51Z
file_id: '4199'
file_name: Direction-selective optical transmission of 3D fcc photonic crystals
in the microwave regime.pdf
file_size: 310534
relation: main_file
success: 1
file_date_updated: 2018-08-28T12:19:51Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '2'
language:
- iso: eng
page: 102-106
publication: Photonics and Nanostructures - Fundamentals and Applications
publication_identifier:
issn:
- 1569-4410
publication_status: published
publisher: Elsevier BV
status: public
title: Direction-selective optical transmission of 3D fcc photonic crystals in the
microwave regime
type: journal_article
user_id: '55706'
volume: 8
year: '2009'
...
---
_id: '4219'
abstract:
- lang: eng
text: 'The solar cell concept presented here is based on 3C-SiC nano- or microwires
and conju¬gated polymers. Therefore the silicon carbide wires are fabricated by
a sol-gel route including a car-bothermal reduction step, allowing growth with
predetermined uniform diameters between 0.1 and 2μm and lengths up to several
centimetres. The design of our photovoltaic device is therein based on a p-i-n
structure, well known e.g. from silicon photovoltaics, involving an intrinsic
semiconduc¬tor as the central photoactive layer, sandwiched between two complementary
doped wide-bandgap semiconductors giving the driving force for charge separation.
In our case the 3C-SiC microwires act as the electron acceptor and simultaneously
as carrier material for all involved components of the photovoltaic element. '
article_type: original
author:
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
- first_name: M.
full_name: Zöller, M.
last_name: Zöller
- first_name: B.
full_name: Friedel, B.
last_name: Friedel
citation:
ama: Greulich-Weber S, Zöller M, Friedel B. Textile Solar Cells Based on SiC Microwires.
Materials Science Forum. 2009;615-617:239-242. doi:10.4028/www.scientific.net/msf.615-617.239
apa: Greulich-Weber, S., Zöller, M., & Friedel, B. (2009). Textile Solar Cells
Based on SiC Microwires. Materials Science Forum, 615–617,
239–242. https://doi.org/10.4028/www.scientific.net/msf.615-617.239
bibtex: '@article{Greulich-Weber_Zöller_Friedel_2009, title={Textile Solar Cells
Based on SiC Microwires}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.239},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber,
Siegmund and Zöller, M. and Friedel, B.}, year={2009}, pages={239–242} }'
chicago: 'Greulich-Weber, Siegmund, M. Zöller, and B. Friedel. “Textile Solar Cells
Based on SiC Microwires.” Materials Science Forum 615–617 (2009): 239–42.
https://doi.org/10.4028/www.scientific.net/msf.615-617.239.'
ieee: S. Greulich-Weber, M. Zöller, and B. Friedel, “Textile Solar Cells Based on
SiC Microwires,” Materials Science Forum, vol. 615–617, pp. 239–242, 2009.
mla: Greulich-Weber, Siegmund, et al. “Textile Solar Cells Based on SiC Microwires.”
Materials Science Forum, vol. 615–617, Trans Tech Publications, 2009, pp.
239–42, doi:10.4028/www.scientific.net/msf.615-617.239.
short: S. Greulich-Weber, M. Zöller, B. Friedel, Materials Science Forum 615–617
(2009) 239–242.
date_created: 2018-08-28T13:00:44Z
date_updated: 2022-01-06T07:00:38Z
department:
- _id: '15'
doi: 10.4028/www.scientific.net/msf.615-617.239
language:
- iso: eng
page: 239-242
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: Textile Solar Cells Based on SiC Microwires
type: journal_article
user_id: '55706'
volume: 615-617
year: '2009'
...
---
_id: '4220'
abstract:
- lang: eng
text: 'We report on constructive methods providing a large range of high purity
porous SiC products. All methods are based on modified sol-gel processes combined
with carbothermal re¬duction. We obtain monodisperse regular pores of well defined
diameters by using carbon sphere templates which are removed after SiC infiltration.
A different way is a sol-gel based conversion of graphite bodies into SiC, which
transfers the porosity from the graphite matrix into the final SiC product. Thus
a large variety of porosity features are available, originating either from natural
poro¬sity of graphite or from priorly created nano-/ microstructures in the carbonaceous
base material. Whereas all our pristine porous sol-gel derived silicon carbide
products are semi-insulating, doping is possible, during the growth to modifiy
the electrical and optical properties. '
article_type: original
author:
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
- first_name: B.
full_name: Friedel, B.
last_name: Friedel
citation:
ama: Greulich-Weber S, Friedel B. Bottom-Up Routes to Porous Silicon Carbide. Materials
Science Forum. 2009;615-617:637-640. doi:10.4028/www.scientific.net/msf.615-617.637
apa: Greulich-Weber, S., & Friedel, B. (2009). Bottom-Up Routes to Porous Silicon
Carbide. Materials Science Forum, 615–617, 637–640. https://doi.org/10.4028/www.scientific.net/msf.615-617.637
bibtex: '@article{Greulich-Weber_Friedel_2009, title={Bottom-Up Routes to Porous
Silicon Carbide}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.637},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Greulich-Weber,
Siegmund and Friedel, B.}, year={2009}, pages={637–640} }'
chicago: 'Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous
Silicon Carbide.” Materials Science Forum 615–617 (2009): 637–40. https://doi.org/10.4028/www.scientific.net/msf.615-617.637.'
ieee: S. Greulich-Weber and B. Friedel, “Bottom-Up Routes to Porous Silicon Carbide,”
Materials Science Forum, vol. 615–617, pp. 637–640, 2009.
mla: Greulich-Weber, Siegmund, and B. Friedel. “Bottom-Up Routes to Porous Silicon
Carbide.” Materials Science Forum, vol. 615–617, Trans Tech Publications,
2009, pp. 637–40, doi:10.4028/www.scientific.net/msf.615-617.637.
short: S. Greulich-Weber, B. Friedel, Materials Science Forum 615–617 (2009) 637–640.
date_created: 2018-08-28T13:02:05Z
date_updated: 2022-01-06T07:00:38Z
department:
- _id: '15'
doi: 10.4028/www.scientific.net/msf.615-617.637
language:
- iso: eng
page: 637-640
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: Bottom-Up Routes to Porous Silicon Carbide
type: journal_article
user_id: '55706'
volume: 615-617
year: '2009'
...
---
_id: '4221'
abstract:
- lang: eng
text: "Nanopatterning of silicon surfaces by means of He+ ion implantation through
self-organized colloidal\r\nmasks is reported for the first time. Nanosphere lithography
(NSL) masks with mask openings of 46–\r\n230 nm width were deposited on Si(100)
wafers. He+ ions were implanted through these masks in order\r\nto induce a local
cavity formation and Si surface swelling. The surface morphology and the subsurface\r\nstructure
were studied using atomic force microscopy (AFM) and cross-sectional transmission
electron\r\nmicroscopy (XTEM), respectively, as a function of mask and implantation
parameters. It is demonstrated\r\nthat regular arrays of both individual hillocks
and trough-like circular rings can be generated."
article_type: original
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: C.
full_name: Seider, C.
last_name: Seider
- first_name: F.
full_name: Fischer, F.
last_name: Fischer
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
citation:
ama: 'Lindner J, Seider C, Fischer F, Weinl M, Stritzker B. Regular surface patterns
by local swelling induced by He implantation into silicon through nanosphere lithography
masks. Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms. 2009;267(8-9):1394-1397. doi:10.1016/j.nimb.2009.01.052'
apa: 'Lindner, J., Seider, C., Fischer, F., Weinl, M., & Stritzker, B. (2009).
Regular surface patterns by local swelling induced by He implantation into silicon
through nanosphere lithography masks. Nuclear Instruments and Methods in Physics
Research Section B: Beam Interactions with Materials and Atoms, 267(8–9),
1394–1397. https://doi.org/10.1016/j.nimb.2009.01.052'
bibtex: '@article{Lindner_Seider_Fischer_Weinl_Stritzker_2009, title={Regular surface
patterns by local swelling induced by He implantation into silicon through nanosphere
lithography masks}, volume={267}, DOI={10.1016/j.nimb.2009.01.052},
number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lindner,
Jörg and Seider, C. and Fischer, F. and Weinl, M. and Stritzker, B.}, year={2009},
pages={1394–1397} }'
chicago: 'Lindner, Jörg, C. Seider, F. Fischer, M. Weinl, and B. Stritzker. “Regular
Surface Patterns by Local Swelling Induced by He Implantation into Silicon through
Nanosphere Lithography Masks.” Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms 267, no. 8–9 (2009):
1394–97. https://doi.org/10.1016/j.nimb.2009.01.052.'
ieee: 'J. Lindner, C. Seider, F. Fischer, M. Weinl, and B. Stritzker, “Regular surface
patterns by local swelling induced by He implantation into silicon through nanosphere
lithography masks,” Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms, vol. 267, no. 8–9, pp. 1394–1397,
2009.'
mla: 'Lindner, Jörg, et al. “Regular Surface Patterns by Local Swelling Induced
by He Implantation into Silicon through Nanosphere Lithography Masks.” Nuclear
Instruments and Methods in Physics Research Section B: Beam Interactions with
Materials and Atoms, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1394–97, doi:10.1016/j.nimb.2009.01.052.'
short: 'J. Lindner, C. Seider, F. Fischer, M. Weinl, B. Stritzker, Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms 267 (2009) 1394–1397.'
date_created: 2018-08-28T13:04:23Z
date_updated: 2022-01-06T07:00:38Z
ddc:
- '530'
doi: 10.1016/j.nimb.2009.01.052
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:05:32Z
date_updated: 2018-08-28T13:05:32Z
file_id: '4222'
file_name: Regular Silicon Surface Patterns by Local Swelling Induced by He Implantation
through Nanosphere Lithography Masks.pdf
file_size: 467219
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:05:32Z
has_accepted_license: '1'
intvolume: ' 267'
issue: 8-9
language:
- iso: eng
page: 1394-1397
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Regular surface patterns by local swelling induced by He implantation into
silicon through nanosphere lithography masks
type: journal_article
user_id: '55706'
volume: 267
year: '2009'
...
---
_id: '4223'
abstract:
- lang: eng
text: "The formation of a thick protective oxide layer on NiTi by plasma immersion
ion implantation (PIII) for\r\nmedical devices is an established technology on
the laboratory scale. It is shown here that by pre-implantation\r\nwith either
180 keV Ni or low fluence of 190 MeV Au ions, a radiation suppressed growth of
the\r\noxide layer of up to 40% is observed. At higher Au fluence and higher PIII
temperatures, this changes into\r\nan enhancement of 25–40%. Different amorphisation
mechanisms or disorder formation is proposed as\r\nthe underlying effect."
article_type: original
author:
- first_name: J.
full_name: Lutz, J.
last_name: Lutz
- first_name: J.W.
full_name: Gerlach, J.W.
last_name: Gerlach
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W.
full_name: Assmann, W.
last_name: Assmann
- first_name: S.
full_name: Mändl, S.
last_name: Mändl
citation:
ama: 'Lutz J, Gerlach JW, Lindner J, Assmann W, Mändl S. Radiation suppressed oxide
growth in the system Ni–Ti–O. Nuclear Instruments and Methods in Physics Research
Section B: Beam Interactions with Materials and Atoms. 2009;267(8-9):1634-1637.
doi:10.1016/j.nimb.2009.01.068'
apa: 'Lutz, J., Gerlach, J. W., Lindner, J., Assmann, W., & Mändl, S. (2009).
Radiation suppressed oxide growth in the system Ni–Ti–O. Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms, 267(8–9), 1634–1637. https://doi.org/10.1016/j.nimb.2009.01.068'
bibtex: '@article{Lutz_Gerlach_Lindner_Assmann_Mändl_2009, title={Radiation suppressed
oxide growth in the system Ni–Ti–O}, volume={267}, DOI={10.1016/j.nimb.2009.01.068},
number={8–9}, journal={Nuclear Instruments and Methods in Physics Research Section
B: Beam Interactions with Materials and Atoms}, publisher={Elsevier BV}, author={Lutz,
J. and Gerlach, J.W. and Lindner, Jörg and Assmann, W. and Mändl, S.}, year={2009},
pages={1634–1637} }'
chicago: 'Lutz, J., J.W. Gerlach, Jörg Lindner, W. Assmann, and S. Mändl. “Radiation
Suppressed Oxide Growth in the System Ni–Ti–O.” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms
267, no. 8–9 (2009): 1634–37. https://doi.org/10.1016/j.nimb.2009.01.068.'
ieee: 'J. Lutz, J. W. Gerlach, J. Lindner, W. Assmann, and S. Mändl, “Radiation
suppressed oxide growth in the system Ni–Ti–O,” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms,
vol. 267, no. 8–9, pp. 1634–1637, 2009.'
mla: 'Lutz, J., et al. “Radiation Suppressed Oxide Growth in the System Ni–Ti–O.”
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms, vol. 267, no. 8–9, Elsevier BV, 2009, pp. 1634–37,
doi:10.1016/j.nimb.2009.01.068.'
short: 'J. Lutz, J.W. Gerlach, J. Lindner, W. Assmann, S. Mändl, Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms 267 (2009) 1634–1637.'
date_created: 2018-08-28T13:07:17Z
date_updated: 2022-01-06T07:00:39Z
ddc:
- '530'
doi: 10.1016/j.nimb.2009.01.068
extern: '1'
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:07:49Z
date_updated: 2018-08-28T13:07:49Z
file_id: '4224'
file_name: Radiation Suppressed Diffusion in the System Ni-Ti-O.pdf
file_size: 342798
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:07:49Z
has_accepted_license: '1'
intvolume: ' 267'
issue: 8-9
language:
- iso: eng
page: 1634-1637
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Radiation suppressed oxide growth in the system Ni–Ti–O
type: journal_article
user_id: '55706'
volume: 267
year: '2009'
...
---
_id: '4225'
abstract:
- lang: eng
text: EPR and ESE in nitrogen doped 4H- and 6H-SiC show besides the well known triplet
lines of 14N on quasi-cubic (Nc,k) and hexagonal (Nc,h) sites additional lines
(Nx) of comparatively low intensity providing half the hf splitting of Nc,k. Frequently
re-interpreted as spin-forbidden lines, arising from Nc,k pairs and triads or
resulting from hopping conductivity, only recently the theoretical calculation
of the corresponding g-tensors lead to a tentative model of distant NC donor pairs
on inequivalent lattice sites which are coupled to S = 1 assuming a fine-structure
splitting too small to be observed in the EPR and ESE experiments. In this work,
we present ESE nutation measurements confirming S = 1 for the Nx center. Analysing
the nutation frequencies in comparison with that of the Nc,k (S = 1/2) spectrum
as well as the line width of ESE and EPR spectra we obtain a rough estimate between
5×104 cm-1 and 50×104 cm-1 for the fine-structure splitting demonstrating efficient
spin-coupling between nitrogen donors in 4H-SiC.
article_type: original
author:
- first_name: D.V.
full_name: Savchenko, D.V.
last_name: Savchenko
- first_name: Andreas
full_name: Pöppl, Andreas
last_name: Pöppl
- first_name: Ekaterina N.
full_name: Kalabukhova, Ekaterina N.
last_name: Kalabukhova
- first_name: Siegmund
full_name: Greulich-Weber, Siegmund
last_name: Greulich-Weber
- first_name: Eva
full_name: Rauls, Eva
last_name: Rauls
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
last_name: Schmidt
- first_name: Uwe
full_name: Gerstmann, Uwe
last_name: Gerstmann
citation:
ama: Savchenko DV, Pöppl A, Kalabukhova EN, et al. Spin-Coupling in Heavily Nitrogen-Doped
4H-SiC. Materials Science Forum. 2009;615-617:343-346. doi:10.4028/www.scientific.net/msf.615-617.343
apa: Savchenko, D. V., Pöppl, A., Kalabukhova, E. N., Greulich-Weber, S., Rauls,
E., Schmidt, W. G., & Gerstmann, U. (2009). Spin-Coupling in Heavily Nitrogen-Doped
4H-SiC. Materials Science Forum, 615–617, 343–346. https://doi.org/10.4028/www.scientific.net/msf.615-617.343
bibtex: '@article{Savchenko_Pöppl_Kalabukhova_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009,
title={Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC}, volume={615–617}, DOI={10.4028/www.scientific.net/msf.615-617.343},
journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Savchenko,
D.V. and Pöppl, Andreas and Kalabukhova, Ekaterina N. and Greulich-Weber, Siegmund
and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2009}, pages={343–346}
}'
chicago: 'Savchenko, D.V., Andreas Pöppl, Ekaterina N. Kalabukhova, Siegmund Greulich-Weber,
Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Spin-Coupling in Heavily Nitrogen-Doped
4H-SiC.” Materials Science Forum 615–617 (2009): 343–46. https://doi.org/10.4028/www.scientific.net/msf.615-617.343.'
ieee: D. V. Savchenko et al., “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC,”
Materials Science Forum, vol. 615–617, pp. 343–346, 2009.
mla: Savchenko, D. V., et al. “Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC.”
Materials Science Forum, vol. 615–617, Trans Tech Publications, 2009, pp.
343–46, doi:10.4028/www.scientific.net/msf.615-617.343.
short: D.V. Savchenko, A. Pöppl, E.N. Kalabukhova, S. Greulich-Weber, E. Rauls,
W.G. Schmidt, U. Gerstmann, Materials Science Forum 615–617 (2009) 343–346.
date_created: 2018-08-28T13:09:27Z
date_updated: 2022-01-06T07:00:39Z
department:
- _id: '15'
doi: 10.4028/www.scientific.net/msf.615-617.343
language:
- iso: eng
page: 343-346
publication: Materials Science Forum
publication_identifier:
issn:
- 1662-9752
publication_status: published
publisher: Trans Tech Publications
status: public
title: Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC
type: journal_article
user_id: '55706'
volume: 615-617
year: '2009'
...
---
_id: '4226'
abstract:
- lang: eng
text: "In non-annealed 6H-SiC samples that were electron irradiated at low temperature,
a new EPR signal due to a\r\nS =1 defect center with exceptionally large zero-field
splitting (D= +652\x0210\x034cm\x031,E=\x038\x0210\x034cm\x031) has been observed
under illumination. A positive sign of D demonstrates that the spin–orbit contribution
to the zero-field splitting exceeds by far that of the spin–spin interaction.
A principal axis of the fine-structure tilted by 59 1 against the crystal\r\nc
-axis as well as the exceptionally high zero-field splitting D can be qualitatively
understood by the occurrence of additional close-lying defect levels in defect
clusters resulting in comparatively large second-order spin–orbit coupling. A
tentative assignment to vacancy clusters is supported by the observed annealing
behavior."
article_type: original
author:
- first_name: A.
full_name: Scholle, A.
last_name: Scholle
- first_name: S.
full_name: Greulich-Weber, S.
last_name: Greulich-Weber
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: W.G.
full_name: Schmidt, W.G.
last_name: Schmidt
- first_name: U.
full_name: Gerstmann, U.
last_name: Gerstmann
citation:
ama: 'Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Vacancy clusters
created via room temperature irradiation in 6H-SiC. Physica B: Condensed Matter.
2009;404(23-24):4742-4744. doi:10.1016/j.physb.2009.08.123'
apa: 'Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., & Gerstmann,
U. (2009). Vacancy clusters created via room temperature irradiation in 6H-SiC.
Physica B: Condensed Matter, 404(23–24), 4742–4744. https://doi.org/10.1016/j.physb.2009.08.123'
bibtex: '@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2009, title={Vacancy
clusters created via room temperature irradiation in 6H-SiC}, volume={404}, DOI={10.1016/j.physb.2009.08.123},
number={23–24}, journal={Physica B: Condensed Matter}, publisher={Elsevier BV},
author={Scholle, A. and Greulich-Weber, S. and Rauls, E. and Schmidt, W.G. and
Gerstmann, U.}, year={2009}, pages={4742–4744} }'
chicago: 'Scholle, A., S. Greulich-Weber, E. Rauls, W.G. Schmidt, and U. Gerstmann.
“Vacancy Clusters Created via Room Temperature Irradiation in 6H-SiC.” Physica
B: Condensed Matter 404, no. 23–24 (2009): 4742–44. https://doi.org/10.1016/j.physb.2009.08.123.'
ieee: 'A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann,
“Vacancy clusters created via room temperature irradiation in 6H-SiC,” Physica
B: Condensed Matter, vol. 404, no. 23–24, pp. 4742–4744, 2009.'
mla: 'Scholle, A., et al. “Vacancy Clusters Created via Room Temperature Irradiation
in 6H-SiC.” Physica B: Condensed Matter, vol. 404, no. 23–24, Elsevier
BV, 2009, pp. 4742–44, doi:10.1016/j.physb.2009.08.123.'
short: 'A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Physica
B: Condensed Matter 404 (2009) 4742–4744.'
date_created: 2018-08-28T13:11:31Z
date_updated: 2022-01-06T07:00:39Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1016/j.physb.2009.08.123
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T13:12:36Z
date_updated: 2018-08-28T13:12:36Z
file_id: '4227'
file_name: Vacancy clusters created via room temperature irradiation in 6H-SiC.pdf
file_size: 223477
relation: main_file
success: 1
file_date_updated: 2018-08-28T13:12:36Z
has_accepted_license: '1'
intvolume: ' 404'
issue: 23-24
language:
- iso: eng
page: 4742-4744
publication: 'Physica B: Condensed Matter'
publication_identifier:
issn:
- 0921-4526
publication_status: published
publisher: Elsevier BV
status: public
title: Vacancy clusters created via room temperature irradiation in 6H-SiC
type: journal_article
user_id: '55706'
volume: 404
year: '2009'
...
---
_id: '4228'
abstract:
- lang: eng
text: The issues and challenges of growing GaN-based structures on large area Si
substrates have been studied. These include Si slip resulting from large temperature
non-uniformities and cracking due to differential thermal expansion. Using an
AlN nucleation layer in conjunction with an AlGaN buffer layer for stress management,
and together with the interactive use of real time in-situ optical monitoring
it was possible to realise flat, crack-free and uniform GaN and LED structures
on 6-inch Si (111) substrates. The EL performance of processed LED devices was
also studied on-wafer, giving good EL characteristics including a forward bias
voltage of ~3.5 V at 20 mA from a 500 μm x 500 μm device.
article_number: '723118'
author:
- first_name: D.
full_name: Zhu, D.
last_name: Zhu
- first_name: C.
full_name: McAleese, C.
last_name: McAleese
- first_name: K. K.
full_name: McLaughlin, K. K.
last_name: McLaughlin
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: C. O.
full_name: Salcianu, C. O.
last_name: Salcianu
- first_name: E. J.
full_name: Thrush, E. J.
last_name: Thrush
- first_name: M. J.
full_name: Kappers, M. J.
last_name: Kappers
- first_name: W. A.
full_name: Phillips, W. A.
last_name: Phillips
- first_name: P.
full_name: Lane, P.
last_name: Lane
- first_name: D. J.
full_name: Wallis, D. J.
last_name: Wallis
- first_name: T.
full_name: Martin, T.
last_name: Martin
- first_name: M.
full_name: Astles, M.
last_name: Astles
- first_name: S.
full_name: Thomas, S.
last_name: Thomas
- first_name: A.
full_name: Pakes, A.
last_name: Pakes
- first_name: M.
full_name: Heuken, M.
last_name: Heuken
- first_name: C. J.
full_name: Humphreys, C. J.
last_name: Humphreys
citation:
ama: 'Zhu D, McAleese C, McLaughlin KK, et al. GaN-based LEDs grown on 6-inch diameter
Si (111) substrates by MOVPE. In: Streubel KP, Jeon H, Tu L-W, eds. Light-Emitting
Diodes: Materials, Devices, and Applications for Solid State Lighting XIII.
Vol 7231. SPIE; 2009. doi:10.1117/12.814919'
apa: 'Zhu, D., McAleese, C., McLaughlin, K. K., Häberlen, M., Salcianu, C. O., Thrush,
E. J., … Humphreys, C. J. (2009). GaN-based LEDs grown on 6-inch diameter Si (111)
substrates by MOVPE. In K. P. Streubel, H. Jeon, & L.-W. Tu (Eds.), Light-Emitting
Diodes: Materials, Devices, and Applications for Solid State Lighting XIII
(Vol. 7231). San Jose, California (USA): SPIE. https://doi.org/10.1117/12.814919'
bibtex: '@inproceedings{Zhu_McAleese_McLaughlin_Häberlen_Salcianu_Thrush_Kappers_Phillips_Lane_Wallis_et
al._2009, title={GaN-based LEDs grown on 6-inch diameter Si (111) substrates by
MOVPE}, volume={7231}, DOI={10.1117/12.814919},
number={723118}, booktitle={Light-Emitting Diodes: Materials, Devices, and Applications
for Solid State Lighting XIII}, publisher={SPIE}, author={Zhu, D. and McAleese,
C. and McLaughlin, K. K. and Häberlen, M. and Salcianu, C. O. and Thrush, E. J.
and Kappers, M. J. and Phillips, W. A. and Lane, P. and Wallis, D. J. and et al.},
editor={Streubel, Klaus P. and Jeon, Heonsu and Tu, Li-WeiEditors}, year={2009}
}'
chicago: 'Zhu, D., C. McAleese, K. K. McLaughlin, M. Häberlen, C. O. Salcianu, E.
J. Thrush, M. J. Kappers, et al. “GaN-Based LEDs Grown on 6-Inch Diameter Si (111)
Substrates by MOVPE.” In Light-Emitting Diodes: Materials, Devices, and Applications
for Solid State Lighting XIII, edited by Klaus P. Streubel, Heonsu Jeon, and
Li-Wei Tu, Vol. 7231. SPIE, 2009. https://doi.org/10.1117/12.814919.'
ieee: 'D. Zhu et al., “GaN-based LEDs grown on 6-inch diameter Si (111) substrates
by MOVPE,” in Light-Emitting Diodes: Materials, Devices, and Applications for
Solid State Lighting XIII, San Jose, California (USA), 2009, vol. 7231.'
mla: 'Zhu, D., et al. “GaN-Based LEDs Grown on 6-Inch Diameter Si (111) Substrates
by MOVPE.” Light-Emitting Diodes: Materials, Devices, and Applications for
Solid State Lighting XIII, edited by Klaus P. Streubel et al., vol. 7231,
723118, SPIE, 2009, doi:10.1117/12.814919.'
short: 'D. Zhu, C. McAleese, K.K. McLaughlin, M. Häberlen, C.O. Salcianu, E.J. Thrush,
M.J. Kappers, W.A. Phillips, P. Lane, D.J. Wallis, T. Martin, M. Astles, S. Thomas,
A. Pakes, M. Heuken, C.J. Humphreys, in: K.P. Streubel, H. Jeon, L.-W. Tu (Eds.),
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting
XIII, SPIE, 2009.'
conference:
location: San Jose, California (USA)
name: 'SPIE OPTO: Integrated Optoelectronic Devices, 2009'
date_created: 2018-08-28T13:15:19Z
date_updated: 2022-01-06T07:00:39Z
department:
- _id: '15'
doi: 10.1117/12.814919
editor:
- first_name: Klaus P.
full_name: Streubel, Klaus P.
last_name: Streubel
- first_name: Heonsu
full_name: Jeon, Heonsu
last_name: Jeon
- first_name: Li-Wei
full_name: Tu, Li-Wei
last_name: Tu
intvolume: ' 7231'
language:
- iso: eng
publication: 'Light-Emitting Diodes: Materials, Devices, and Applications for Solid
State Lighting XIII'
publication_status: published
publisher: SPIE
status: public
title: GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE
type: conference
user_id: '55706'
volume: 7231
year: '2009'
...
---
_id: '4231'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Characterisation of nanostructured materials for electronic and
photonic information processing. In: ; 2009.'
apa: Lindner, J. (2009). Characterisation of nanostructured materials for electronic
and photonic information processing. Presented at the Guest Lectures at Departamento
de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias, Universidad
Autónoma de Madrid (Spain).
bibtex: '@inproceedings{Lindner_2009, title={Characterisation of nanostructured
materials for electronic and photonic information processing}, author={Lindner,
Jörg}, year={2009} }'
chicago: Lindner, Jörg. “Characterisation of Nanostructured Materials for Electronic
and Photonic Information Processing,” 2009.
ieee: J. Lindner, “Characterisation of nanostructured materials for electronic and
photonic information processing,” presented at the Guest Lectures at Departamento
de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias, Universidad
Autónoma de Madrid (Spain), 2009.
mla: Lindner, Jörg. Characterisation of Nanostructured Materials for Electronic
and Photonic Information Processing. 2009.
short: 'J. Lindner, in: 2009.'
conference:
end_date: 2009-03-27
location: ' Universidad Autónoma de Madrid (Spain)'
name: Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados
y Nanotecnologias
start_date: 2009-03-25
date_created: 2018-08-28T13:22:03Z
date_updated: 2022-01-06T07:00:40Z
department:
- _id: '15'
language:
- iso: eng
status: public
title: Characterisation of nanostructured materials for electronic and photonic information
processing
type: conference_abstract
user_id: '55706'
year: '2009'
...
---
_id: '4232'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Ion Implantation: Fundamental Aspects and Recent Applications.
In: ; 2009.'
apa: 'Lindner, J. (2009). Ion Implantation: Fundamental Aspects and Recent Applications.
Presented at the 2nd GRK Convention, Bad Karlshafen (Germany).'
bibtex: '@inproceedings{Lindner_2009, title={Ion Implantation: Fundamental Aspects
and Recent Applications}, author={Lindner, Jörg}, year={2009} }'
chicago: 'Lindner, Jörg. “Ion Implantation: Fundamental Aspects and Recent Applications,”
2009.'
ieee: 'J. Lindner, “Ion Implantation: Fundamental Aspects and Recent Applications,”
presented at the 2nd GRK Convention, Bad Karlshafen (Germany), 2009.'
mla: 'Lindner, Jörg. Ion Implantation: Fundamental Aspects and Recent Applications.
2009.'
short: 'J. Lindner, in: 2009.'
conference:
end_date: 2009-11-27
location: Bad Karlshafen (Germany)
name: 2nd GRK Convention
start_date: 2009-11-26
date_created: 2018-08-28T13:23:22Z
date_updated: 2022-01-06T07:00:40Z
department:
- _id: '15'
language:
- iso: eng
status: public
title: 'Ion Implantation: Fundamental Aspects and Recent Applications'
type: conference
user_id: '55706'
year: '2009'
...
---
_id: '4233'
author:
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Lindner J. Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter
Nanomasken. In: ; 2009.'
apa: Lindner, J. (2009). Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels
selbstorganisierter Nanomasken. Presented at the Seminar des RUBION der Ruhr-Universität
Bochum, Bochum (Germany).
bibtex: '@inproceedings{Lindner_2009, title={Ionenstrahlmodifikation kleiner Oberflächenbereiche
mittels selbstorganisierter Nanomasken}, author={Lindner, Jörg}, year={2009} }'
chicago: Lindner, Jörg. “Ionenstrahlmodifikation Kleiner Oberflächenbereiche Mittels
Selbstorganisierter Nanomasken,” 2009.
ieee: J. Lindner, “Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter
Nanomasken,” presented at the Seminar des RUBION der Ruhr-Universität Bochum,
Bochum (Germany), 2009.
mla: Lindner, Jörg. Ionenstrahlmodifikation Kleiner Oberflächenbereiche Mittels
Selbstorganisierter Nanomasken. 2009.
short: 'J. Lindner, in: 2009.'
conference:
end_date: 2009-06-26
location: Bochum (Germany)
name: Seminar des RUBION der Ruhr-Universität Bochum
start_date: 2009-06-26
date_created: 2018-08-28T13:24:41Z
date_updated: 2022-01-06T07:00:40Z
department:
- _id: '15'
language:
- iso: eng
status: public
title: Ionenstrahlmodifikation kleiner Oberflächenbereiche mittels selbstorganisierter
Nanomasken
type: conference
user_id: '55706'
year: '2009'
...
---
_id: '4234'
author:
- first_name: F.
full_name: Reichardt, F.
last_name: Reichardt
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: D.
full_name: Gogel, D.
last_name: Gogel
- first_name: K.
full_name: Wätje, K.
last_name: Wätje
- first_name: A.
full_name: Wixforth, A.
last_name: Wixforth
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Reichardt F, Weinl M, Gogel D, et al. Synthesis of 2D-Nanostructured ZnO Thin
Films using Nanosphere Lithography and Sputter Deposition. In: ; 2009.'
apa: Reichardt, F., Weinl, M., Gogel, D., Wätje, K., Wixforth, A., Stritzker, B.,
& Lindner, J. (2009). Synthesis of 2D-Nanostructured ZnO Thin Films using
Nanosphere Lithography and Sputter Deposition. Presented at the E-MRS Spring Meeting
2009, Straßburg (France).
bibtex: '@inproceedings{Reichardt_Weinl_Gogel_Wätje_Wixforth_Stritzker_Lindner_2009,
title={Synthesis of 2D-Nanostructured ZnO Thin Films using Nanosphere Lithography
and Sputter Deposition}, author={Reichardt, F. and Weinl, M. and Gogel, D. and
Wätje, K. and Wixforth, A. and Stritzker, B. and Lindner, Jörg}, year={2009} }'
chicago: Reichardt, F., M. Weinl, D. Gogel, K. Wätje, A. Wixforth, B. Stritzker,
and Jörg Lindner. “Synthesis of 2D-Nanostructured ZnO Thin Films Using Nanosphere
Lithography and Sputter Deposition,” 2009.
ieee: F. Reichardt et al., “Synthesis of 2D-Nanostructured ZnO Thin Films
using Nanosphere Lithography and Sputter Deposition,” presented at the E-MRS Spring
Meeting 2009, Straßburg (France), 2009.
mla: Reichardt, F., et al. Synthesis of 2D-Nanostructured ZnO Thin Films Using
Nanosphere Lithography and Sputter Deposition. 2009.
short: 'F. Reichardt, M. Weinl, D. Gogel, K. Wätje, A. Wixforth, B. Stritzker, J.
Lindner, in: 2009.'
conference:
end_date: 2009-06-12
location: Straßburg (France)
name: E-MRS Spring Meeting 2009
start_date: 2009-06-08
date_created: 2018-08-28T13:26:45Z
date_updated: 2022-01-06T07:00:40Z
department:
- _id: '15'
language:
- iso: eng
status: public
title: Synthesis of 2D-Nanostructured ZnO Thin Films using Nanosphere Lithography
and Sputter Deposition
type: conference
user_id: '55706'
year: '2009'
...
---
_id: '5072'
author:
- first_name: Deutsches
full_name: Institut für Normung e.V., Deutsches
last_name: Institut für Normung e.V.
citation:
ama: 'Institut für Normung e.V. D. PAS 1094: Hybride Wertschöpfung --- Integration
von Produktion Und Dienstleistung.; 2009.'
apa: 'Institut für Normung e.V., D. (2009). PAS 1094: Hybride Wertschöpfung ---
Integration von Produktion und Dienstleistung.'
bibtex: '@book{Institut für Normung e.V._2009, title={PAS 1094: Hybride Wertschöpfung
--- Integration von Produktion und Dienstleistung.}, author={Institut für Normung
e.V., Deutsches}, year={2009} }'
chicago: 'Institut für Normung e.V., Deutsches. PAS 1094: Hybride Wertschöpfung
--- Integration von Produktion Und Dienstleistung., 2009.'
ieee: 'D. Institut für Normung e.V., PAS 1094: Hybride Wertschöpfung --- Integration
von Produktion und Dienstleistung. 2009.'
mla: 'Institut für Normung e.V., Deutsches. PAS 1094: Hybride Wertschöpfung ---
Integration von Produktion Und Dienstleistung. 2009.'
short: 'D. Institut für Normung e.V., PAS 1094: Hybride Wertschöpfung --- Integration
von Produktion Und Dienstleistung., 2009.'
date_created: 2018-10-30T14:29:40Z
date_updated: 2022-01-06T07:01:36Z
department:
- _id: '526'
extern: '1'
status: public
title: 'PAS 1094: Hybride Wertschöpfung --- Integration von Produktion und Dienstleistung.'
type: report
user_id: '21671'
year: '2009'
...
---
_id: '5558'
author:
- first_name: C
full_name: Schwens, C
last_name: Schwens
- first_name: Rüdiger
full_name: Kabst, Rüdiger
id: '42362'
last_name: Kabst
citation:
ama: 'Schwens C, Kabst R. Determinanten früher Internationalisierung: eine Meta-Analyse.
Zeitschrift für Betriebswirtschaft (ZfB) . 2009;79(1):1-26.'
apa: 'Schwens, C., & Kabst, R. (2009). Determinanten früher Internationalisierung:
eine Meta-Analyse. Zeitschrift Für Betriebswirtschaft (ZfB). , 79(1),
1–26.'
bibtex: '@article{Schwens_Kabst_2009, title={ Determinanten früher Internationalisierung:
eine Meta-Analyse.}, volume={79}, number={1}, journal={Zeitschrift für Betriebswirtschaft
(ZfB). }, author={Schwens, C and Kabst, Rüdiger}, year={2009}, pages={1–26} }'
chicago: 'Schwens, C, and Rüdiger Kabst. “ Determinanten Früher Internationalisierung:
Eine Meta-Analyse.” Zeitschrift Für Betriebswirtschaft (ZfB). 79, no.
1 (2009): 1–26.'
ieee: 'C. Schwens and R. Kabst, “ Determinanten früher Internationalisierung: eine
Meta-Analyse.,” Zeitschrift für Betriebswirtschaft (ZfB). , vol. 79, no.
1, pp. 1–26, 2009.'
mla: 'Schwens, C., and Rüdiger Kabst. “ Determinanten Früher Internationalisierung:
Eine Meta-Analyse.” Zeitschrift Für Betriebswirtschaft (ZfB). , vol. 79,
no. 1, 2009, pp. 1–26.'
short: C. Schwens, R. Kabst, Zeitschrift Für Betriebswirtschaft (ZfB). 79 (2009)
1–26.
date_created: 2018-11-14T10:05:57Z
date_updated: 2022-01-06T07:01:59Z
department:
- _id: '274'
intvolume: ' 79'
issue: '1'
language:
- iso: eng
page: 1-26
publication: 'Zeitschrift für Betriebswirtschaft (ZfB). '
status: public
title: ' Determinanten früher Internationalisierung: eine Meta-Analyse.'
type: journal_article
user_id: '46632'
volume: 79
year: '2009'
...
---
_id: '5559'
author:
- first_name: C
full_name: Schwens, C
last_name: Schwens
- first_name: Rüdiger
full_name: Kabst, Rüdiger
id: '42362'
last_name: Kabst
citation:
ama: 'Schwens C, Kabst R. Early Internationalization: A Transaction Cost Economics
and Structural Embeddedness Perspective. Journal of International Entrepreneurship
(JIE) . 2009;7(4):323-340.'
apa: 'Schwens, C., & Kabst, R. (2009). Early Internationalization: A Transaction
Cost Economics and Structural Embeddedness Perspective. Journal of International
Entrepreneurship (JIE). , 7(4), 323–340.'
bibtex: '@article{Schwens_Kabst_2009, title={Early Internationalization: A Transaction
Cost Economics and Structural Embeddedness Perspective.}, volume={7}, number={4},
journal={Journal of International Entrepreneurship (JIE). }, author={Schwens,
C and Kabst, Rüdiger}, year={2009}, pages={323–340} }'
chicago: 'Schwens, C, and Rüdiger Kabst. “Early Internationalization: A Transaction
Cost Economics and Structural Embeddedness Perspective.” Journal of International
Entrepreneurship (JIE). 7, no. 4 (2009): 323–40.'
ieee: 'C. Schwens and R. Kabst, “Early Internationalization: A Transaction Cost
Economics and Structural Embeddedness Perspective.,” Journal of International
Entrepreneurship (JIE). , vol. 7, no. 4, pp. 323–340, 2009.'
mla: 'Schwens, C., and Rüdiger Kabst. “Early Internationalization: A Transaction
Cost Economics and Structural Embeddedness Perspective.” Journal of International
Entrepreneurship (JIE). , vol. 7, no. 4, 2009, pp. 323–40.'
short: C. Schwens, R. Kabst, Journal of International Entrepreneurship (JIE). 7
(2009) 323–340.
date_created: 2018-11-14T10:09:38Z
date_updated: 2022-01-06T07:01:59Z
department:
- _id: '274'
intvolume: ' 7'
issue: '4'
language:
- iso: eng
page: 323-340
publication: 'Journal of International Entrepreneurship (JIE). '
status: public
title: 'Early Internationalization: A Transaction Cost Economics and Structural Embeddedness
Perspective.'
type: journal_article
user_id: '46632'
volume: 7
year: '2009'
...
---
_id: '5560'
author:
- first_name: C
full_name: Schwens, C
last_name: Schwens
- first_name: Rüdiger
full_name: Kabst, Rüdiger
id: '42362'
last_name: Kabst
citation:
ama: 'Schwens C, Kabst R. How Early Opposed to Late Internationalizers Learn: Experience
of Others and Paradigms of Interpretation. International Business Review (IBR).
2009;18(5):509-522.'
apa: 'Schwens, C., & Kabst, R. (2009). How Early Opposed to Late Internationalizers
Learn: Experience of Others and Paradigms of Interpretation. International
Business Review (IBR), 18(5), 509–522.'
bibtex: '@article{Schwens_Kabst_2009, title={How Early Opposed to Late Internationalizers
Learn: Experience of Others and Paradigms of Interpretation.}, volume={18}, number={5},
journal={ International Business Review (IBR)}, author={Schwens, C and Kabst,
Rüdiger}, year={2009}, pages={509–522} }'
chicago: 'Schwens, C, and Rüdiger Kabst. “How Early Opposed to Late Internationalizers
Learn: Experience of Others and Paradigms of Interpretation.” International
Business Review (IBR) 18, no. 5 (2009): 509–22.'
ieee: 'C. Schwens and R. Kabst, “How Early Opposed to Late Internationalizers Learn:
Experience of Others and Paradigms of Interpretation.,” International Business
Review (IBR), vol. 18, no. 5, pp. 509–522, 2009.'
mla: 'Schwens, C., and Rüdiger Kabst. “How Early Opposed to Late Internationalizers
Learn: Experience of Others and Paradigms of Interpretation.” International
Business Review (IBR), vol. 18, no. 5, 2009, pp. 509–22.'
short: C. Schwens, R. Kabst, International Business Review (IBR) 18 (2009) 509–522.
date_created: 2018-11-14T10:10:58Z
date_updated: 2022-01-06T07:01:59Z
department:
- _id: '274'
intvolume: ' 18'
issue: '5'
language:
- iso: eng
page: 509-522
publication: ' International Business Review (IBR)'
status: public
title: 'How Early Opposed to Late Internationalizers Learn: Experience of Others and
Paradigms of Interpretation.'
type: journal_article
user_id: '46632'
volume: 18
year: '2009'
...
---
_id: '5561'
author:
- first_name: M
full_name: Baum, M
last_name: Baum
- first_name: C
full_name: Schwens, C
last_name: Schwens
- first_name: Rüdiger
full_name: Kabst, Rüdiger
id: '42362'
last_name: Kabst
citation:
ama: 'Baum M, Schwens C, Kabst R. Internationalisierung junger Technologieunternehmen:
Der moderierende Einfluss der „Liabilities of Foreignness.“. Zeitschrift für
Betriebswirtschaft (ZfB) . 2009;79(6):87-112.'
apa: 'Baum, M., Schwens, C., & Kabst, R. (2009). Internationalisierung junger
Technologieunternehmen: Der moderierende Einfluss der „Liabilities of Foreignness.“.
Zeitschrift Für Betriebswirtschaft (ZfB). , 79(6), 87–112.'
bibtex: '@article{Baum_Schwens_Kabst_2009, title={Internationalisierung junger Technologieunternehmen:
Der moderierende Einfluss der „Liabilities of Foreignness.“}, volume={79}, number={6},
journal={Zeitschrift für Betriebswirtschaft (ZfB). }, author={Baum, M and Schwens,
C and Kabst, Rüdiger}, year={2009}, pages={87–112} }'
chicago: 'Baum, M, C Schwens, and Rüdiger Kabst. “Internationalisierung Junger Technologieunternehmen:
Der Moderierende Einfluss Der „Liabilities of Foreignness.“.” Zeitschrift Für
Betriebswirtschaft (ZfB). 79, no. 6 (2009): 87–112.'
ieee: 'M. Baum, C. Schwens, and R. Kabst, “Internationalisierung junger Technologieunternehmen:
Der moderierende Einfluss der „Liabilities of Foreignness.“,” Zeitschrift für
Betriebswirtschaft (ZfB). , vol. 79, no. 6, pp. 87–112, 2009.'
mla: 'Baum, M., et al. “Internationalisierung Junger Technologieunternehmen: Der
Moderierende Einfluss Der „Liabilities of Foreignness.“.” Zeitschrift Für Betriebswirtschaft
(ZfB). , vol. 79, no. 6, 2009, pp. 87–112.'
short: M. Baum, C. Schwens, R. Kabst, Zeitschrift Für Betriebswirtschaft (ZfB). 79
(2009) 87–112.
date_created: 2018-11-14T10:12:46Z
date_updated: 2022-01-06T07:01:59Z
department:
- _id: '274'
intvolume: ' 79'
issue: '6'
language:
- iso: eng
page: 87-112
publication: 'Zeitschrift für Betriebswirtschaft (ZfB). '
status: public
title: 'Internationalisierung junger Technologieunternehmen: Der moderierende Einfluss
der „Liabilities of Foreignness.“'
type: journal_article
user_id: '46632'
volume: 79
year: '2009'
...