[{"user_id":"37339","extern":"1","status":"public","date_created":"2018-08-27T14:46:59Z","volume":73,"publisher":"Elsevier BV","author":[{"id":"37339","last_name":"Hehenkamp","full_name":"Hehenkamp, Burkhard","first_name":"Burkhard"},{"last_name":"Possajennikov","full_name":"Possajennikov, Alex","first_name":"Alex"},{"last_name":"Guse","first_name":"Tobias","full_name":"Guse, Tobias"}],"publication":"Journal of Economic Behavior & Organization","issue":"2","_id":"4154","intvolume":" 73","citation":{"apa":"Hehenkamp, B., Possajennikov, A., & Guse, T. (2010). On the equivalence of Nash and evolutionary equilibrium in finite populations. Journal of Economic Behavior & Organization, 73(2), 254–258. https://doi.org/10.1016/j.jebo.2009.08.011","ama":"Hehenkamp B, Possajennikov A, Guse T. On the equivalence of Nash and evolutionary equilibrium in finite populations. Journal of Economic Behavior & Organization. 2010;73(2):254-258. doi:10.1016/j.jebo.2009.08.011","chicago":"Hehenkamp, Burkhard, Alex Possajennikov, and Tobias Guse. “On the Equivalence of Nash and Evolutionary Equilibrium in Finite Populations.” Journal of Economic Behavior & Organization 73, no. 2 (2010): 254–58. https://doi.org/10.1016/j.jebo.2009.08.011.","bibtex":"@article{Hehenkamp_Possajennikov_Guse_2010, title={On the equivalence of Nash and evolutionary equilibrium in finite populations}, volume={73}, DOI={10.1016/j.jebo.2009.08.011}, number={2}, journal={Journal of Economic Behavior & Organization}, publisher={Elsevier BV}, author={Hehenkamp, Burkhard and Possajennikov, Alex and Guse, Tobias}, year={2010}, pages={254–258} }","mla":"Hehenkamp, Burkhard, et al. “On the Equivalence of Nash and Evolutionary Equilibrium in Finite Populations.” Journal of Economic Behavior & Organization, vol. 73, no. 2, Elsevier BV, 2010, pp. 254–58, doi:10.1016/j.jebo.2009.08.011.","short":"B. Hehenkamp, A. Possajennikov, T. Guse, Journal of Economic Behavior & Organization 73 (2010) 254–258.","ieee":"B. Hehenkamp, A. Possajennikov, and T. Guse, “On the equivalence of Nash and evolutionary equilibrium in finite populations,” Journal of Economic Behavior & Organization, vol. 73, no. 2, pp. 254–258, 2010."},"year":"2010","type":"journal_article","page":"254-258","title":"On the equivalence of Nash and evolutionary equilibrium in finite populations","publication_status":"published","publication_identifier":{"issn":["0167-2681"]},"department":[{"_id":"280"},{"_id":"475"}],"doi":"10.1016/j.jebo.2009.08.011","date_updated":"2022-01-06T07:00:26Z","language":[{"iso":"eng"}]},{"title":"Strategic Unemployment","user_id":"37339","extern":"1","volume":166,"status":"public","date_created":"2018-08-27T14:58:21Z","author":[{"last_name":"Angerhausen","full_name":"Angerhausen, Julia","first_name":"Julia"},{"first_name":"Christian","full_name":"Bayer, Christian","last_name":"Bayer"},{"first_name":"Burkhard","full_name":"Hehenkamp, Burkhard","last_name":"Hehenkamp"}],"publisher":"Mohr Siebeck","department":[{"_id":"280"},{"_id":"475"}],"publication":"Journal of Institutional and Theoretical Economics (JITE)","issue":"3","date_updated":"2022-01-06T07:00:26Z","_id":"4155","intvolume":" 166","citation":{"ama":"Angerhausen J, Bayer C, Hehenkamp B. Strategic Unemployment. Journal of Institutional and Theoretical Economics (JITE). 2010;166(3):439-461.","apa":"Angerhausen, J., Bayer, C., & Hehenkamp, B. (2010). Strategic Unemployment. Journal of Institutional and Theoretical Economics (JITE), 166(3), 439–461.","chicago":"Angerhausen, Julia, Christian Bayer, and Burkhard Hehenkamp. “Strategic Unemployment.” Journal of Institutional and Theoretical Economics (JITE) 166, no. 3 (2010): 439–61.","bibtex":"@article{Angerhausen_Bayer_Hehenkamp_2010, title={Strategic Unemployment}, volume={166}, number={3}, journal={Journal of Institutional and Theoretical Economics (JITE)}, publisher={Mohr Siebeck}, author={Angerhausen, Julia and Bayer, Christian and Hehenkamp, Burkhard}, year={2010}, pages={439–461} }","mla":"Angerhausen, Julia, et al. “Strategic Unemployment.” Journal of Institutional and Theoretical Economics (JITE), vol. 166, no. 3, Mohr Siebeck, 2010, pp. 439–61.","short":"J. Angerhausen, C. Bayer, B. Hehenkamp, Journal of Institutional and Theoretical Economics (JITE) 166 (2010) 439–461.","ieee":"J. Angerhausen, C. Bayer, and B. Hehenkamp, “Strategic Unemployment,” Journal of Institutional and Theoretical Economics (JITE), vol. 166, no. 3, pp. 439–461, 2010."},"type":"journal_article","year":"2010","page":"439-461"},{"title":"Theory of phonon-mediated relaxation in doped quantum dot molecules","department":[{"_id":"15"}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","date_updated":"2022-01-06T07:00:29Z","doi":"10.1103/physrevb.81.115305","oa":"1","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"A quantum dot molecule doped with a single electron in the presence of diagonal and off-diagonal carrierphonon\r\ncouplings is studied by means of a nonperturbative quantum kinetic theory. The interaction with acoustic phonons by deformation potential and piezoelectric coupling is taken into account. We show that the phonon-mediated relaxation is fast on a picosecond time scale and is dominated by the usually neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted electron tunneling. We show that in the parameter regime of current electrical and optical experiments, the microscopic non-Markovian theory has to be employed."}],"article_type":"original","ddc":["530"],"user_id":"158","publication":"Physical Review B","file_date_updated":"2018-09-04T19:58:41Z","keyword":["tet_topic_qd"],"publisher":"American Physical Society (APS)","author":[{"last_name":"Grodecka-Grad","first_name":"A.","full_name":"Grodecka-Grad, A."},{"last_name":"Förstner","id":"158","first_name":"Jens","orcid":"0000-0001-7059-9862","full_name":"Förstner, Jens"}],"file":[{"file_name":"2010 Grodecka-Grad,Förstner_Theory of phonon-mediated relaxation in doped quantum dot molecules.pdf","date_created":"2018-08-28T08:58:21Z","access_level":"open_access","creator":"hclaudia","file_id":"4175","file_size":680408,"relation":"main_file","content_type":"application/pdf","date_updated":"2018-09-04T19:58:41Z"}],"volume":81,"date_created":"2018-08-28T08:57:24Z","status":"public","has_accepted_license":"1","urn":"41740","intvolume":" 81","_id":"4174","article_number":"115305","issue":"11","year":"2010","citation":{"mla":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” Physical Review B, vol. 81, no. 11, 115305, American Physical Society (APS), 2010, doi:10.1103/physrevb.81.115305.","bibtex":"@article{Grodecka-Grad_Förstner_2010, title={Theory of phonon-mediated relaxation in doped quantum dot molecules}, volume={81}, DOI={10.1103/physrevb.81.115305}, number={11115305}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Grodecka-Grad, A. and Förstner, Jens}, year={2010} }","apa":"Grodecka-Grad, A., & Förstner, J. (2010). Theory of phonon-mediated relaxation in doped quantum dot molecules. Physical Review B, 81(11). https://doi.org/10.1103/physrevb.81.115305","ama":"Grodecka-Grad A, Förstner J. Theory of phonon-mediated relaxation in doped quantum dot molecules. Physical Review B. 2010;81(11). doi:10.1103/physrevb.81.115305","chicago":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” Physical Review B 81, no. 11 (2010). https://doi.org/10.1103/physrevb.81.115305.","ieee":"A. Grodecka-Grad and J. Förstner, “Theory of phonon-mediated relaxation in doped quantum dot molecules,” Physical Review B, vol. 81, no. 11, 2010.","short":"A. Grodecka-Grad, J. Förstner, Physical Review B 81 (2010)."},"type":"journal_article"},{"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"286"}],"title":"Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)","language":[{"iso":"eng"}],"doi":"10.1063/1.3455066","date_updated":"2022-01-06T07:00:33Z","volume":96,"has_accepted_license":"1","status":"public","date_created":"2018-08-28T11:56:08Z","author":[{"last_name":"Tschumak","first_name":"E.","full_name":"Tschumak, E."},{"full_name":"Granzner, R.","first_name":"R.","last_name":"Granzner"},{"last_name":"Lindner","id":"20797","first_name":"Jörg","full_name":"Lindner, Jörg"},{"last_name":"Schwierz","full_name":"Schwierz, F.","first_name":"F."},{"first_name":"K.","full_name":"Lischka, K.","last_name":"Lischka"},{"full_name":"Nagasawa, H.","first_name":"H.","last_name":"Nagasawa"},{"first_name":"M.","full_name":"Abe, M.","last_name":"Abe"},{"full_name":"As, Donald","first_name":"Donald","last_name":"As"}],"publisher":"AIP Publishing","file_date_updated":"2018-08-28T11:58:27Z","publication":"Applied Physics Letters","file":[{"relation":"main_file","success":1,"content_type":"application/pdf","date_updated":"2018-08-28T11:58:27Z","creator":"hclaudia","file_id":"4195","file_size":277385,"access_level":"closed","date_created":"2018-08-28T11:58:27Z","file_name":"Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf"}],"ddc":["530"],"user_id":"55706","article_type":"original","abstract":[{"lang":"eng","text":"A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements."}],"year":"2010","citation":{"chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010). https://doi.org/10.1063/1.3455066.","apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25). https://doi.org/10.1063/1.3455066","ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters. 2010;96(25). doi:10.1063/1.3455066","bibtex":"@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }","mla":"Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.","short":"E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).","ieee":"E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol. 96, no. 25, 2010."},"type":"journal_article","article_number":"253501","issue":"25","intvolume":" 96","_id":"4194"},{"title":"Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","department":[{"_id":"15"}],"doi":"10.1103/physrevb.82.054517","date_updated":"2022-01-06T07:00:34Z","language":[{"iso":"eng"}],"ddc":["530"],"user_id":"55706","extern":"1","article_type":"original","abstract":[{"lang":"eng","text":"We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering\r\nspectrometry, high-resolution transmission electron microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic alloy layer were characterized with superconducting quantum interference\r\ndevice magnetometry. These studies yield precise information about the thickness and demonstrate the homogeneity\r\nof the alloy composition and magnetic properties along the sample series. The dependencies of the\r\ncritical temperature on the Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F predicted by the theory could be realized experimentally, from\r\nreentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of\r\nparameters. Then, T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch core\r\nstructure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved results."}],"volume":82,"status":"public","has_accepted_license":"1","date_created":"2018-08-28T12:22:11Z","author":[{"last_name":"Zdravkov","full_name":"Zdravkov, V. I.","first_name":"V. I."},{"first_name":"J.","full_name":"Kehrle, J.","last_name":"Kehrle"},{"full_name":"Obermeier, G.","first_name":"G.","last_name":"Obermeier"},{"full_name":"Gsell, S.","first_name":"S.","last_name":"Gsell"},{"last_name":"Schreck","full_name":"Schreck, M.","first_name":"M."},{"full_name":"Müller, C.","first_name":"C.","last_name":"Müller"},{"first_name":"H.-A.","full_name":"Krug von Nidda, H.-A.","last_name":"Krug von Nidda"},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"},{"first_name":"J.","full_name":"Moosburger-Will, J.","last_name":"Moosburger-Will"},{"first_name":"E.","full_name":"Nold, E.","last_name":"Nold"},{"full_name":"Morari, R.","first_name":"R.","last_name":"Morari"},{"last_name":"Ryazanov","full_name":"Ryazanov, V. V.","first_name":"V. V."},{"last_name":"Sidorenko","first_name":"A. S.","full_name":"Sidorenko, A. S."},{"full_name":"Horn, S.","first_name":"S.","last_name":"Horn"},{"last_name":"Tidecks","first_name":"R.","full_name":"Tidecks, R."},{"first_name":"L. R.","full_name":"Tagirov, L. R.","last_name":"Tagirov"}],"publisher":"American Physical Society (APS)","publication":"Physical Review B","file_date_updated":"2018-08-28T12:23:29Z","file":[{"relation":"main_file","success":1,"content_type":"application/pdf","date_updated":"2018-08-28T12:23:29Z","creator":"hclaudia","file_id":"4201","file_size":723266,"access_level":"closed","file_name":"Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf","date_created":"2018-08-28T12:23:29Z"}],"article_number":"054517","issue":"5","intvolume":" 82","_id":"4200","type":"journal_article","citation":{"chicago":"Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” Physical Review B 82, no. 5 (2010). https://doi.org/10.1103/physrevb.82.054517.","ama":"Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. Physical Review B. 2010;82(5). doi:10.1103/physrevb.82.054517","apa":"Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller, C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. Physical Review B, 82(5). https://doi.org/10.1103/physrevb.82.054517","bibtex":"@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers}, volume={82}, DOI={10.1103/physrevb.82.054517}, number={5054517}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S. and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }","mla":"Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” Physical Review B, vol. 82, no. 5, 054517, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.054517.","short":"V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V. Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B 82 (2010).","ieee":"V. I. Zdravkov et al., “Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers,” Physical Review B, vol. 82, no. 5, 2010."},"year":"2010"},{"department":[{"_id":"15"}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"publication_status":"published","title":"Characterization of unintentional doping in nonpolar GaN","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:00:34Z","doi":"10.1063/1.3284944","author":[{"last_name":"Zhu","first_name":"Tongtong","full_name":"Zhu, Tongtong"},{"full_name":"Johnston, Carol F.","first_name":"Carol F.","last_name":"Johnston"},{"last_name":"Häberlen","full_name":"Häberlen, Maik","first_name":"Maik"},{"last_name":"Kappers","full_name":"Kappers, Menno J.","first_name":"Menno J."},{"first_name":"Rachel A.","full_name":"Oliver, Rachel A.","last_name":"Oliver"}],"publisher":"AIP Publishing","publication":"Journal of Applied Physics","file_date_updated":"2018-08-28T12:28:22Z","file":[{"access_level":"closed","date_created":"2018-08-28T12:28:22Z","file_name":"Characterization of unintentional doping in nonpolar GaN.pdf","date_updated":"2018-08-28T12:28:22Z","content_type":"application/pdf","relation":"main_file","success":1,"file_size":688753,"file_id":"4203","creator":"hclaudia"}],"volume":107,"status":"public","has_accepted_license":"1","date_created":"2018-08-28T12:27:34Z","extern":"1","article_type":"original","abstract":[{"text":"Unintentional doping in nonpolar a-plane \u0001112¯0\u0002 gallium nitride \u0001GaN\u0002 grown on r-plane \u000111¯02\u0002\r\nsapphire using a three-dimensional \u00013D\u0002–two-dimensional \u00012D\u0002 growth method has been\r\ncharacterized. For both 2D only and 3D–2D growth, the presence of an unintentionally doped region\r\nadjacent to the GaN/sapphire interface is observed by scanning capacitance microscopy \u0001SCM\u0002. The\r\naverage width of this unintentionally doped layer is found to increase with increasing 3D growth\r\ntime. By using an intentionally doped GaN:Si staircase structure for calibration, it is shown that the\r\nunintentionally doped region has an average carrier concentration of \u00012.5\u00010.3\u0002\u00021018 cm−3. SCM\r\nalso reveals the presence of unintentionally doped features extending at 60° from the GaN/sapphire\r\ninterface. The observation of decreasing carrier concentration with distance from the GaN/sapphire\r\ninterface along these features may suggest that the unintentional doping arises from oxygen\r\ndiffusion from the sapphire substrate. Low temperature cathodoluminescence spectra reveal\r\nemission peaks at 3.41 and 3.30 eV, which are believed to originate from basal plane stacking faults\r\n\u0001BSFs\u0002 and prismatic stacking faults \u0001PSFs\u0002, respectively. It is shown that the inclined features\r\nextending from the GaN/sapphire interface exhibit both enhanced BSF and PSF emission. We\r\nsuggest that enhanced unintentional doping occurs in regions around PSFs. Where BSFs intersect\r\nthis doped material their emission is also enhanced due to reduced nonradiative recombination.\r\nTransmission electron microscopy confirms the presence of PSFs extending through the film at 60°\r\nfrom the GaN/sapphire interface.","lang":"eng"}],"ddc":["530"],"user_id":"55706","type":"journal_article","year":"2010","citation":{"ieee":"T. Zhu, C. F. Johnston, M. Häberlen, M. J. Kappers, and R. A. Oliver, “Characterization of unintentional doping in nonpolar GaN,” Journal of Applied Physics, vol. 107, no. 2, 2010.","short":"T. Zhu, C.F. Johnston, M. Häberlen, M.J. Kappers, R.A. Oliver, Journal of Applied Physics 107 (2010).","bibtex":"@article{Zhu_Johnston_Häberlen_Kappers_Oliver_2010, title={Characterization of unintentional doping in nonpolar GaN}, volume={107}, DOI={10.1063/1.3284944}, number={2023503}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Tongtong and Johnston, Carol F. and Häberlen, Maik and Kappers, Menno J. and Oliver, Rachel A.}, year={2010} }","mla":"Zhu, Tongtong, et al. “Characterization of Unintentional Doping in Nonpolar GaN.” Journal of Applied Physics, vol. 107, no. 2, 023503, AIP Publishing, 2010, doi:10.1063/1.3284944.","chicago":"Zhu, Tongtong, Carol F. Johnston, Maik Häberlen, Menno J. Kappers, and Rachel A. Oliver. “Characterization of Unintentional Doping in Nonpolar GaN.” Journal of Applied Physics 107, no. 2 (2010). https://doi.org/10.1063/1.3284944.","apa":"Zhu, T., Johnston, C. F., Häberlen, M., Kappers, M. J., & Oliver, R. A. (2010). Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics, 107(2). https://doi.org/10.1063/1.3284944","ama":"Zhu T, Johnston CF, Häberlen M, Kappers MJ, Oliver RA. Characterization of unintentional doping in nonpolar GaN. Journal of Applied Physics. 2010;107(2). doi:10.1063/1.3284944"},"_id":"4202","intvolume":" 107","article_number":"023503","issue":"2"},{"title":"Defects in carbon implanted silicon calculated by classical potentials and first-principles methods","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"286"}],"doi":"10.1103/physrevb.82.094110","date_updated":"2022-01-06T07:00:35Z","language":[{"iso":"eng"}],"user_id":"55706","ddc":["530"],"abstract":[{"lang":"eng","text":"A comparative theoretical investigation of carbon interstitials in silicon is presented. Calculations using\r\nclassical potentials are compared to first-principles density-functional theory calculations of the geometries,\r\nformation, and activation energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription of this system. In contrast to previous studies, the present first-principles calculations of\r\nthe interstitial carbon migration path yield an activation energy that excellently matches the experiment. The\r\nbond-centered interstitial configuration shows a net magnetization of two electrons, illustrating the need for\r\nspin-polarized calculations."}],"article_type":"original","date_created":"2018-08-28T12:30:15Z","status":"public","has_accepted_license":"1","volume":82,"file":[{"relation":"main_file","success":1,"date_updated":"2018-08-28T12:31:01Z","content_type":"application/pdf","creator":"hclaudia","file_id":"4205","file_size":238023,"access_level":"closed","date_created":"2018-08-28T12:31:01Z","file_name":"Defects in Carbon implanted Silicon calculated by classical potentials and first principles methods.pdf"}],"file_date_updated":"2018-08-28T12:31:01Z","publication":"Physical Review B","author":[{"last_name":"Zirkelbach","first_name":"F.","full_name":"Zirkelbach, F."},{"last_name":"Stritzker","first_name":"B.","full_name":"Stritzker, B."},{"last_name":"Nordlund","first_name":"K.","full_name":"Nordlund, K."},{"id":"20797","last_name":"Lindner","full_name":"Lindner, Jörg","first_name":"Jörg"},{"last_name":"Schmidt","first_name":"W. G.","full_name":"Schmidt, W. G."},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."}],"publisher":"American Physical Society (APS)","issue":"9","article_number":"094110","_id":"4204","intvolume":" 82","citation":{"ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B. 2010;82(9). doi:10.1103/physrevb.82.094110","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., & Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B, 82(9). https://doi.org/10.1103/physrevb.82.094110","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” Physical Review B 82, no. 9 (2010). https://doi.org/10.1103/physrevb.82.094110.","mla":"Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” Physical Review B, vol. 82, no. 9, 094110, American Physical Society (APS), 2010, doi:10.1103/physrevb.82.094110.","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={10.1103/physrevb.82.094110}, number={9094110}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” Physical Review B, vol. 82, no. 9, 2010."},"year":"2010","type":"journal_article"},{"conference":{"end_date":"2010-04-16","name":"Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias ","start_date":"2010-04-14","location":"Universidad Autónoma de Madrid (Spain)"},"date_updated":"2022-01-06T07:00:35Z","_id":"4206","type":"conference_abstract","citation":{"ama":"Lindner J. Advanced topics and applications of Transmission Electron Microscopy, Part I-II. In: ; 2010.","apa":"Lindner, J. (2010). Advanced topics and applications of Transmission Electron Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain).","chicago":"Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II,” 2010.","bibtex":"@inproceedings{Lindner_2010, title={Advanced topics and applications of Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010} }","mla":"Lindner, Jörg. Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II. 2010.","short":"J. Lindner, in: 2010.","ieee":"J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy, Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain), 2010."},"year":"2010","title":"Advanced topics and applications of Transmission Electron Microscopy, Part I-II","user_id":"55706","date_created":"2018-08-28T12:34:11Z","status":"public","department":[{"_id":"15"},{"_id":"286"}],"author":[{"full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797","last_name":"Lindner"}]},{"department":[{"_id":"15"},{"_id":"286"}],"publisher":"MRS Symposium Proceedings ","volume":1181,"publication_identifier":{"isbn":["978-1-60511-154-4"]},"publication_status":"published","editor":[{"last_name":"Ila","first_name":"D.","full_name":"Ila, D."},{"first_name":"N. ","full_name":"Kishimoto, N. ","last_name":"Kishimoto"},{"full_name":"Lindner, Jörg","first_name":"Jörg","id":"20797","last_name":"Lindner"},{"first_name":"J.","full_name":"Baglin, J.","last_name":"Baglin"}],"date_created":"2018-08-28T12:38:16Z","status":"public","title":"Ion Beams and Nano-Engineering","user_id":"55706","year":"2010","citation":{"short":"D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.","ieee":"D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., Ion Beams and Nano-Engineering, vol. 1181. MRS Symposium Proceedings , 2010.","chicago":"Ila, D., N. Kishimoto, Jörg Lindner, and J. Baglin, eds. Ion Beams and Nano-Engineering. Vol. 1181. MRS Symposium Proceedings , 2010.","apa":"Ila, D., Kishimoto, N., Lindner, J., & Baglin, J. (Eds.). (2010). Ion Beams and Nano-Engineering (Vol. 1181). Presented at the MRS Spring Meeting 2009, San Francisco (USA): MRS Symposium Proceedings .","ama":"Ila D, Kishimoto N, Lindner J, Baglin J, eds. Ion Beams and Nano-Engineering. Vol 1181. MRS Symposium Proceedings ; 2010.","bibtex":"@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering}, volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }","mla":"Ila, D., et al., editors. Ion Beams and Nano-Engineering. Vol. 1181, MRS Symposium Proceedings , 2010."},"type":"book_editor","language":[{"iso":"eng"}],"conference":{"location":"San Francisco (USA)","name":"MRS Spring Meeting 2009"},"intvolume":" 1181","_id":"4207","date_updated":"2022-01-06T07:00:35Z"},{"article_type":"original","abstract":[{"lang":"eng","text":"Growth of GaN on Si(111) potentially enables cost efficient manufacturing of optoelectronic devices due to the possibility of using cheap large area substrates. However, GaN layers grown on Si(111) substrates suffer from high tensile stress that can lead to cracking at layer thicknesses exceeding 1 μm. Another challenge is the high dislocation density of GaN layers grown on Si(111) which is detrimental to device performance. In this paper we show that a step graded AlGaN buffer layer can compensate tensile stress, avoiding cracking, and at the same time reduce the dislocation density. An additional SiNx interlayer in the GaN layer is shown to further reduce the dislocation density down to the high 108 /cm². Weak beam dark field TEM was used to study the dislocation reduction in cross sectional samples and for comparison of the step graded AlGaN buffer layer structure to a continuously graded one. STEM ADF was used to determine the exact location of dislocation bending with respect to the position of the interface."}],"user_id":"55706","ddc":["530"],"file":[{"file_name":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers.pdf","date_created":"2018-08-28T12:40:20Z","access_level":"closed","file_size":13011359,"creator":"hclaudia","file_id":"4209","date_updated":"2018-08-28T12:40:20Z","content_type":"application/pdf","success":1,"relation":"main_file"}],"author":[{"full_name":"Häberlen, M","first_name":"M","last_name":"Häberlen"},{"full_name":"Zhu, D","first_name":"D","last_name":"Zhu"},{"full_name":"McAleese, C","first_name":"C","last_name":"McAleese"},{"last_name":"Kappers","first_name":"M J","full_name":"Kappers, M J"},{"last_name":"Humphreys","full_name":"Humphreys, C J","first_name":"C J"}],"publisher":"IOP Publishing","publication":"Journal of Physics: Conference Series","file_date_updated":"2018-08-28T12:40:20Z","status":"public","has_accepted_license":"1","date_created":"2018-08-28T12:39:31Z","volume":209,"_id":"4208","intvolume":" 209","article_number":"012017","type":"journal_article","citation":{"chicago":"Häberlen, M, D Zhu, C McAleese, M J Kappers, and C J Humphreys. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” Journal of Physics: Conference Series 209 (2010). https://doi.org/10.1088/1742-6596/209/1/012017.","ama":"Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. Journal of Physics: Conference Series. 2010;209. doi:10.1088/1742-6596/209/1/012017","apa":"Häberlen, M., Zhu, D., McAleese, C., Kappers, M. J., & Humphreys, C. J. (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. Journal of Physics: Conference Series, 209. https://doi.org/10.1088/1742-6596/209/1/012017","mla":"Häberlen, M., et al. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” Journal of Physics: Conference Series, vol. 209, 012017, IOP Publishing, 2010, doi:10.1088/1742-6596/209/1/012017.","bibtex":"@article{Häberlen_Zhu_McAleese_Kappers_Humphreys_2010, title={Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers}, volume={209}, DOI={10.1088/1742-6596/209/1/012017}, number={012017}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Häberlen, M and Zhu, D and McAleese, C and Kappers, M J and Humphreys, C J}, year={2010} }","short":"M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal of Physics: Conference Series 209 (2010).","ieee":"M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” Journal of Physics: Conference Series, vol. 209, 2010."},"year":"2010","title":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers","department":[{"_id":"15"}],"publication_status":"published","publication_identifier":{"issn":["1742-6596"]},"date_updated":"2022-01-06T07:00:36Z","doi":"10.1088/1742-6596/209/1/012017","language":[{"iso":"eng"}]},{"title":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer","department":[{"_id":"15"}],"publication_status":"published","publication_identifier":{"issn":["0370-1972","1521-3951"]},"date_updated":"2022-01-06T07:00:36Z","doi":"10.1002/pssb.200983537","language":[{"iso":"eng"}],"abstract":[{"text":"In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties.","lang":"eng"}],"article_type":"original","user_id":"55706","ddc":["530"],"file":[{"date_updated":"2018-08-28T12:43:31Z","content_type":"application/pdf","success":1,"relation":"main_file","file_size":911931,"creator":"hclaudia","file_id":"4211","access_level":"closed","file_name":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf","date_created":"2018-08-28T12:43:31Z"}],"file_date_updated":"2018-08-28T12:43:31Z","publication":"physica status solidi (b)","publisher":"Wiley","author":[{"last_name":"Häberlen","first_name":"Maik","full_name":"Häberlen, Maik"},{"full_name":"Zhu, Dandan","first_name":"Dandan","last_name":"Zhu"},{"first_name":"Clifford","full_name":"McAleese, Clifford","last_name":"McAleese"},{"first_name":"Tongtong","full_name":"Zhu, Tongtong","last_name":"Zhu"},{"full_name":"Kappers, Menno J.","first_name":"Menno J.","last_name":"Kappers"},{"full_name":"Humphreys, Colin J.","first_name":"Colin J.","last_name":"Humphreys"}],"date_created":"2018-08-28T12:42:58Z","has_accepted_license":"1","status":"public","volume":247,"intvolume":" 247","_id":"4210","issue":"7","page":"1753-1756","year":"2010","type":"journal_article","citation":{"short":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756.","ieee":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” physica status solidi (b), vol. 247, no. 7, pp. 1753–1756, 2010.","apa":"Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., & Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. Physica Status Solidi (B), 247(7), 1753–1756. https://doi.org/10.1002/pssb.200983537","ama":"Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. physica status solidi (b). 2010;247(7):1753-1756. doi:10.1002/pssb.200983537","chicago":"Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” Physica Status Solidi (B) 247, no. 7 (2010): 1753–56. https://doi.org/10.1002/pssb.200983537.","bibtex":"@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247}, DOI={10.1002/pssb.200983537}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }","mla":"Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” Physica Status Solidi (B), vol. 247, no. 7, Wiley, 2010, pp. 1753–56, doi:10.1002/pssb.200983537."}},{"citation":{"short":"M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).","ieee":"M. Häberlen et al., “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” Journal of Applied Physics, vol. 108, no. 3, 2010.","chicago":"Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal of Applied Physics 108, no. 3 (2010). https://doi.org/10.1063/1.3460641.","apa":"Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics, 108(3). https://doi.org/10.1063/1.3460641","ama":"Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. Journal of Applied Physics. 2010;108(3). doi:10.1063/1.3460641","bibtex":"@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010, title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={10.1063/1.3460641}, number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L. and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010} }","mla":"Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” Journal of Applied Physics, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:10.1063/1.3460641."},"year":"2010","type":"journal_article","_id":"4212","intvolume":" 108","issue":"3","article_number":"033523","file":[{"date_updated":"2018-08-28T12:47:23Z","content_type":"application/pdf","success":1,"relation":"main_file","file_size":2391054,"creator":"hclaudia","file_id":"4213","access_level":"closed","file_name":"Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth.pdf","date_created":"2018-08-28T12:47:23Z"}],"author":[{"full_name":"Häberlen, M.","first_name":"M.","last_name":"Häberlen"},{"first_name":"T. J.","full_name":"Badcock, T. J.","last_name":"Badcock"},{"last_name":"Moram","full_name":"Moram, M. A.","first_name":"M. A."},{"last_name":"Hollander","first_name":"J. L.","full_name":"Hollander, J. L."},{"full_name":"Kappers, M. J.","first_name":"M. J.","last_name":"Kappers"},{"first_name":"P.","full_name":"Dawson, P.","last_name":"Dawson"},{"first_name":"C. J.","full_name":"Humphreys, C. J.","last_name":"Humphreys"},{"full_name":"Oliver, R. A.","first_name":"R. A.","last_name":"Oliver"}],"publisher":"AIP Publishing","file_date_updated":"2018-08-28T12:47:23Z","publication":"Journal of Applied Physics","has_accepted_license":"1","status":"public","date_created":"2018-08-28T12:46:49Z","volume":108,"article_type":"original","abstract":[{"text":"Low temperature cathodo- and photoluminescence has been performed on nonpolar a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue” luminescence bands, attributed to recombination at point defects or impurities. The intensity of this emission is observed to decrease steadily across the window region along the −c direction, possibly due to asymmetric diffusion of a point defect/impurity species. When overgrown at a higher V–III ratio, the near band edge and basal-plane stacking fault emission intensity increases by orders of magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence imaging, the various emission features are correlated with the microstructure of the film. In particular, the peak energy of the basal-plane stacking fault emission is seen to be blueshifted by \u000415 meV in the wing relative to the window region, which may be related to the different strain states in the respective regions.","lang":"eng"}],"user_id":"55706","ddc":["530"],"language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:00:37Z","doi":"10.1063/1.3460641","department":[{"_id":"15"}],"publication_status":"published","publication_identifier":{"issn":["0021-8979","1089-7550"]},"title":"Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth"},{"date_updated":"2022-01-06T07:00:37Z","doi":"10.1016/j.jcrysgro.2010.08.041","language":[{"iso":"eng"}],"title":"The effects of annealing on non-polar (112¯0) a-plane GaN films","department":[{"_id":"15"}],"publication_status":"published","publication_identifier":{"issn":["0022-0248"]},"_id":"4214","intvolume":" 312","issue":"23","page":"3536-3543","type":"journal_article","citation":{"ieee":"R. Hao et al., “The effects of annealing on non-polar (112¯0) a-plane GaN films,” Journal of Crystal Growth, vol. 312, no. 23, pp. 3536–3543, 2010.","short":"R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.","bibtex":"@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={10.1016/j.jcrysgro.2010.08.041}, number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }","mla":"Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” Journal of Crystal Growth, vol. 312, no. 23, Elsevier BV, 2010, pp. 3536–43, doi:10.1016/j.jcrysgro.2010.08.041.","apa":"Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A., … Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth, 312(23), 3536–3543. https://doi.org/10.1016/j.jcrysgro.2010.08.041","ama":"Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. Journal of Crystal Growth. 2010;312(23):3536-3543. doi:10.1016/j.jcrysgro.2010.08.041","chicago":"Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” Journal of Crystal Growth 312, no. 23 (2010): 3536–43. https://doi.org/10.1016/j.jcrysgro.2010.08.041."},"year":"2010","abstract":[{"text":"Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070°C. Most dislocations were partial\r\ndislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface throughout their length, although\r\nthe total dislocation density remained unchanged. These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction 1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed on the sample surface.\r\nThere was also an increase in the density of unintentionally n-type doped electrically conductive\r\ninclined features present at the film–substrate interface (as observed in cross-section using scanning\r\ncapacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures can affect both the microstructure and the electrical properties of non-polar GaN films.","lang":"eng"}],"article_type":"original","ddc":["530"],"user_id":"55706","publication":"Journal of Crystal Growth","file_date_updated":"2018-08-28T12:50:07Z","publisher":"Elsevier BV","author":[{"full_name":"Hao, Rui","first_name":"Rui","last_name":"Hao"},{"last_name":"Zhu","first_name":"T.","full_name":"Zhu, T."},{"full_name":"Häberlen, M.","first_name":"M.","last_name":"Häberlen"},{"first_name":"T.Y.","full_name":"Chang, T.Y.","last_name":"Chang"},{"last_name":"Kappers","full_name":"Kappers, M.J.","first_name":"M.J."},{"last_name":"Oliver","first_name":"R.A.","full_name":"Oliver, R.A."},{"full_name":"Humphreys, C.J.","first_name":"C.J.","last_name":"Humphreys"},{"first_name":"M.A.","full_name":"Moram, M.A.","last_name":"Moram"}],"file":[{"access_level":"closed","date_created":"2018-08-28T12:50:07Z","file_name":"The effects of annealing on non-polar (11-20) a-plane GaN films.pdf","relation":"main_file","success":1,"date_updated":"2018-08-28T12:50:07Z","content_type":"application/pdf","file_id":"4215","creator":"hclaudia","file_size":1218752}],"volume":312,"date_created":"2018-08-28T12:49:39Z","status":"public","has_accepted_license":"1"},{"page":"403-406","year":"2010","type":"journal_article","citation":{"short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 645–648 (2010) 403–406.","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” Materials Science Forum, vol. 645–648, pp. 403–406, 2010.","chicago":"Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” Materials Science Forum 645–648 (2010): 403–6. https://doi.org/10.4028/www.scientific.net/msf.645-648.403.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. Materials Science Forum. 2010;645-648:403-406. doi:10.4028/www.scientific.net/msf.645-648.403","apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., & Gerstmann, U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. Materials Science Forum, 645–648, 403–406. https://doi.org/10.4028/www.scientific.net/msf.645-648.403","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648}, DOI={10.4028/www.scientific.net/msf.645-648.403}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Scholle, Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2010}, pages={403–406} }","mla":"Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” Materials Science Forum, vol. 645–648, Trans Tech Publications, 2010, pp. 403–06, doi:10.4028/www.scientific.net/msf.645-648.403."},"_id":"4216","file":[{"date_created":"2018-08-28T12:54:26Z","file_name":"Fine structure of triplet centers in room temperature irradiated 6H-SiC.pdf","access_level":"closed","file_size":583484,"file_id":"4217","creator":"hclaudia","date_updated":"2018-08-28T12:54:26Z","content_type":"application/pdf","relation":"main_file","success":1}],"publication":"Materials Science Forum","file_date_updated":"2018-08-28T12:54:26Z","author":[{"last_name":"Scholle","full_name":"Scholle, Andreas","first_name":"Andreas"},{"last_name":"Greulich-Weber","first_name":"Siegmund","full_name":"Greulich-Weber, Siegmund"},{"full_name":"Rauls, Eva","first_name":"Eva","last_name":"Rauls"},{"full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero","last_name":"Schmidt"},{"last_name":"Gerstmann","first_name":"Uwe","full_name":"Gerstmann, Uwe"}],"publisher":"Trans Tech Publications","date_created":"2018-08-28T12:53:50Z","has_accepted_license":"1","status":"public","volume":"645-648","abstract":[{"lang":"eng","text":"In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new\r\nEPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652·10-4\r\ncm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit\r\ncontribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal\r\naxis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high\r\nzero-field splitting D can be qualitatively understood by the occurrence of additional close-lying\r\ndefect levels in defect clusters resulting in comparatively large second-order spin-orbit coupling. A\r\ntentative assignment to vacancy clusters is supported by the observed annealing behavior."}],"article_type":"original","user_id":"55706","ddc":["530"],"language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:00:38Z","doi":"10.4028/www.scientific.net/msf.645-648.403","department":[{"_id":"15"}],"publication_status":"published","publication_identifier":{"issn":["1662-9752"]},"title":"Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC"},{"language":[{"iso":"eng"}],"citation":{"short":"J. Becker, D. 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Empirische Analyse der Unternehmensbewertung für die Erbschaftsteuer mit dem vereinfachten Ertragswertverfahren (Vol. 108)."},"type":"working_paper","intvolume":" 108","_id":"5091","date_updated":"2022-01-06T07:01:37Z","department":[{"_id":"187"},{"_id":"189"},{"_id":"635"}],"author":[{"full_name":"Müller, Jens","first_name":"Jens","id":"1245","last_name":"Müller"},{"id":"530","last_name":"Sureth-Sloane","full_name":"Sureth-Sloane, Caren","first_name":"Caren"}],"date_created":"2018-10-30T14:57:30Z","status":"public","volume":108,"user_id":"61801","title":"Empirische Analyse der Unternehmensbewertung für die Erbschaftsteuer mit dem vereinfachten Ertragswertverfahren"},{"date_updated":"2022-01-06T07:01:37Z","_id":"5093","intvolume":" 63","issue":"20","language":[{"iso":"eng"}],"type":"journal_article","citation":{"chicago":"Müller, Jens, Caren Sureth-Sloane, and Christian Läufer. “Mögliche Fallstricke Einer Optimierung Unternehmerischer Investitionsentscheidungen Auf Der Grundlage Der Konzernsteuerquote.” Die Wirtschaftsprüfung 63, no. 20 (2010): 1028–34.","apa":"Müller, J., Sureth-Sloane, C., & Läufer, C. (2010). Mögliche Fallstricke einer Optimierung unternehmerischer Investitionsentscheidungen auf der Grundlage der Konzernsteuerquote. Die Wirtschaftsprüfung, 63(20), 1028–1034.","ama":"Müller J, Sureth-Sloane C, Läufer C. Mögliche Fallstricke einer Optimierung unternehmerischer Investitionsentscheidungen auf der Grundlage der Konzernsteuerquote. Die Wirtschaftsprüfung. 2010;63(20):1028-1034.","bibtex":"@article{Müller_Sureth-Sloane_Läufer_2010, title={Mögliche Fallstricke einer Optimierung unternehmerischer Investitionsentscheidungen auf der Grundlage der Konzernsteuerquote}, volume={63}, number={20}, journal={Die Wirtschaftsprüfung}, author={Müller, Jens and Sureth-Sloane, Caren and Läufer, Christian}, year={2010}, pages={1028–1034} }","mla":"Müller, Jens, et al. “Mögliche Fallstricke Einer Optimierung Unternehmerischer Investitionsentscheidungen Auf Der Grundlage Der Konzernsteuerquote.” Die Wirtschaftsprüfung, vol. 63, no. 20, 2010, pp. 1028–34.","short":"J. Müller, C. Sureth-Sloane, C. Läufer, Die Wirtschaftsprüfung 63 (2010) 1028–1034.","ieee":"J. Müller, C. Sureth-Sloane, and C. Läufer, “Mögliche Fallstricke einer Optimierung unternehmerischer Investitionsentscheidungen auf der Grundlage der Konzernsteuerquote,” Die Wirtschaftsprüfung, vol. 63, no. 20, pp. 1028–1034, 2010."},"year":"2010","page":"1028-1034","user_id":"61801","title":"Mögliche Fallstricke einer Optimierung unternehmerischer Investitionsentscheidungen auf der Grundlage der Konzernsteuerquote","author":[{"last_name":"Müller","id":"1245","first_name":"Jens","full_name":"Müller, Jens"},{"first_name":"Caren","full_name":"Sureth-Sloane, Caren","last_name":"Sureth-Sloane","id":"530"},{"full_name":"Läufer, Christian","first_name":"Christian","last_name":"Läufer"}],"department":[{"_id":"187"},{"_id":"189"},{"_id":"635"}],"publication":"Die Wirtschaftsprüfung","status":"public","date_created":"2018-10-30T15:00:12Z","volume":63},{"title":"The Impact of Profit Taxation on Capitalized Investment with Options to Delay and Divest","user_id":"21222","author":[{"last_name":"Schneider","first_name":"Georg","full_name":"Schneider, Georg"},{"id":"530","last_name":"Sureth-Sloane","full_name":"Sureth-Sloane, Caren","first_name":"Caren"}],"department":[{"_id":"187"}],"volume":97,"status":"public","date_created":"2018-10-30T15:02:27Z","date_updated":"2022-01-06T07:01:37Z","_id":"5095","intvolume":" 97","series_title":"arqus, Quantitative Research in Taxation","citation":{"short":"G. Schneider, C. Sureth-Sloane, The Impact of Profit Taxation on Capitalized Investment with Options to Delay and Divest, 2010.","ieee":"G. Schneider and C. Sureth-Sloane, The Impact of Profit Taxation on Capitalized Investment with Options to Delay and Divest, vol. 97. 2010.","chicago":"Schneider, Georg, and Caren Sureth-Sloane. The Impact of Profit Taxation on Capitalized Investment with Options to Delay and Divest. Vol. 97. Arqus, Quantitative Research in Taxation, 2010.","apa":"Schneider, G., & Sureth-Sloane, C. (2010). The Impact of Profit Taxation on Capitalized Investment with Options to Delay and Divest (Vol. 97).","ama":"Schneider G, Sureth-Sloane C. The Impact of Profit Taxation on Capitalized Investment with Options to Delay and Divest. Vol 97.; 2010.","bibtex":"@book{Schneider_Sureth-Sloane_2010, series={arqus, Quantitative Research in Taxation}, title={The Impact of Profit Taxation on Capitalized Investment with Options to Delay and Divest}, volume={97}, author={Schneider, Georg and Sureth-Sloane, Caren}, year={2010}, collection={arqus, Quantitative Research in Taxation} }","mla":"Schneider, Georg, and Caren Sureth-Sloane. The Impact of Profit Taxation on Capitalized Investment with Options to Delay and Divest. Vol. 97, 2010."},"type":"working_paper","year":"2010"},{"_id":"5096","date_updated":"2022-01-06T07:01:37Z","doi":"10.1007/978-3-8349-8819-5_20","language":[{"iso":"ger"}],"page":"453-482","year":"2010","citation":{"chicago":"Sureth-Sloane, Caren. “Beteiligungsveräußerungen und Abgeltungssteuer.” In Besteuerung, Rechnungslegung und Prüfung der Unternehmen, 453–82. Wiesbaden: Gabler, 2010. https://doi.org/10.1007/978-3-8349-8819-5_20.","apa":"Sureth-Sloane, C. (2010). Beteiligungsveräußerungen und Abgeltungssteuer. In Besteuerung, Rechnungslegung und Prüfung der Unternehmen (pp. 453–482). Wiesbaden: Gabler. https://doi.org/10.1007/978-3-8349-8819-5_20","ama":"Sureth-Sloane C. Beteiligungsveräußerungen und Abgeltungssteuer. In: Besteuerung, Rechnungslegung und Prüfung der Unternehmen. Wiesbaden: Gabler; 2010:453-482. doi:10.1007/978-3-8349-8819-5_20","bibtex":"@inbook{Sureth-Sloane_2010, place={Wiesbaden}, title={Beteiligungsveräußerungen und Abgeltungssteuer}, DOI={10.1007/978-3-8349-8819-5_20}, booktitle={Besteuerung, Rechnungslegung und Prüfung der Unternehmen}, publisher={Gabler}, author={Sureth-Sloane, Caren}, year={2010}, pages={453–482} }","mla":"Sureth-Sloane, Caren. “Beteiligungsveräußerungen und Abgeltungssteuer.” Besteuerung, Rechnungslegung und Prüfung der Unternehmen, Gabler, 2010, pp. 453–82, doi:10.1007/978-3-8349-8819-5_20.","short":"C. Sureth-Sloane, in: Besteuerung, Rechnungslegung und Prüfung der Unternehmen, Gabler, Wiesbaden, 2010, pp. 453–482.","ieee":"C. Sureth-Sloane, “Beteiligungsveräußerungen und Abgeltungssteuer,” in Besteuerung, Rechnungslegung und Prüfung der Unternehmen, Wiesbaden: Gabler, 2010, pp. 453–482."},"type":"book_chapter","place":"Wiesbaden","user_id":"21222","title":"Beteiligungsveräußerungen und Abgeltungssteuer","publication":"Besteuerung, Rechnungslegung und Prüfung der Unternehmen","department":[{"_id":"187"}],"author":[{"full_name":"Sureth-Sloane, Caren","first_name":"Caren","id":"530","last_name":"Sureth-Sloane"}],"publisher":"Gabler","date_created":"2018-10-30T15:03:17Z","status":"public","publication_identifier":{"isbn":["9783834917997","9783834988195"]},"publication_status":"published"},{"page":"497-502","type":"journal_article","year":"2010","citation":{"chicago":"Sureth-Sloane, Caren. “Wichtigste Einflussfaktoren auf die steuerliche Verlustnutzung bei Personengesellschaften.” Steuer und Studium 31, no. 10 (2010): 497–502.","ama":"Sureth-Sloane C. 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M. Gilroy, E. Lukas, and C. Heimann, Welchen Einfluss hat die Anwesenheit von ausländischen und multinationalen Unternehmungen auf die deutschen Exporte? 2010.","short":"B.M. Gilroy, E. Lukas, C. Heimann, Welchen Einfluss Hat Die Anwesenheit von Ausländischen Und Multinationalen Unternehmungen Auf Die Deutschen Exporte?, 2010.","bibtex":"@book{Gilroy_Lukas_Heimann_2010, title={Welchen Einfluss hat die Anwesenheit von ausländischen und multinationalen Unternehmungen auf die deutschen Exporte?}, author={Gilroy, Bernard Michael and Lukas, Elmar and Heimann, Christian}, year={2010} }","mla":"Gilroy, Bernard Michael, et al. Welchen Einfluss Hat Die Anwesenheit von Ausländischen Und Multinationalen Unternehmungen Auf Die Deutschen Exporte? 2010.","apa":"Gilroy, B. M., Lukas, E., & Heimann, C. (2010). Welchen Einfluss hat die Anwesenheit von ausländischen und multinationalen Unternehmungen auf die deutschen Exporte?","ama":"Gilroy BM, Lukas E, Heimann C. Welchen Einfluss Hat Die Anwesenheit von Ausländischen Und Multinationalen Unternehmungen Auf Die Deutschen Exporte?; 2010.","chicago":"Gilroy, Bernard Michael, Elmar Lukas, and Christian Heimann. Welchen Einfluss Hat Die Anwesenheit von Ausländischen Und Multinationalen Unternehmungen Auf Die Deutschen Exporte?, 2010."}},{"status":"public","date_created":"2018-11-01T17:00:34Z","author":[{"full_name":"Schmitz, Hendrik","first_name":"Hendrik","id":"48879","last_name":"Schmitz"},{"last_name":"Augurzky","full_name":"Augurzky, B.","first_name":"B."}],"department":[{"_id":"281"},{"_id":"475"}],"user_id":"63697","title":"Effizienz Deutscher Krankenhäuser im Zeitablauf","extern":"1","language":[{"iso":"ger"}],"year":"2010","citation":{"chicago":"Schmitz, Hendrik, and B. Augurzky. Effizienz Deutscher Krankenhäuser im Zeitablauf. RIW Projektbericht, 2010.","apa":"Schmitz, H., & Augurzky, B. (2010). Effizienz Deutscher Krankenhäuser im Zeitablauf.","ama":"Schmitz H, Augurzky B. 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B., et al. “Die Wirkung Ausländischer Direktinvestitionen Auf Die Beschäftigung Im Heimatmarkt: Eine Empirische Analyse Des Deutschen Mittelstands.” Zeitschrift Für Betriebswirtschaft (ZfB)., vol. 80, no. 7, 2010, pp. 797–819.","chicago":"Zapkau, F B, C Schwens, and Rüdiger Kabst. “Die Wirkung Ausländischer Direktinvestitionen Auf Die Beschäftigung Im Heimatmarkt: Eine Empirische Analyse Des Deutschen Mittelstands.” Zeitschrift Für Betriebswirtschaft (ZfB). 80, no. 7 (2010): 797–819.","ama":"Zapkau FB, Schwens C, Kabst R. Die Wirkung ausländischer Direktinvestitionen auf die Beschäftigung im Heimatmarkt: Eine empirische Analyse des deutschen Mittelstands. Zeitschrift für Betriebswirtschaft (ZfB). 2010;80(7):797-819.","apa":"Zapkau, F. B., Schwens, C., & Kabst, R. (2010). Die Wirkung ausländischer Direktinvestitionen auf die Beschäftigung im Heimatmarkt: Eine empirische Analyse des deutschen Mittelstands. Zeitschrift Für Betriebswirtschaft (ZfB)., 80(7), 797–819.","ieee":"F. B. Zapkau, C. Schwens, and R. Kabst, “Die Wirkung ausländischer Direktinvestitionen auf die Beschäftigung im Heimatmarkt: Eine empirische Analyse des deutschen Mittelstands.,” Zeitschrift für Betriebswirtschaft (ZfB)., vol. 80, no. 7, pp. 797–819, 2010.","short":"F.B. Zapkau, C. Schwens, R. Kabst, Zeitschrift Für Betriebswirtschaft (ZfB). 80 (2010) 797–819."},"year":"2010","page":"797-819","language":[{"iso":"eng"}]},{"issue":"3","date_updated":"2022-01-06T07:01:59Z","_id":"5555","intvolume":" 21","page":"225-228","type":"journal_article","citation":{"ama":"Steinmetz H, Schwens C, Isidor R, Kabst R. Enlarging the Focus on the Role of Competencies, Abilities, and Personality in Management Research. Management Revue: The International Review of Management Studies. 2010;21(3):225-228.","apa":"Steinmetz, H., Schwens, C., Isidor, R., & Kabst, R. (2010). Enlarging the Focus on the Role of Competencies, Abilities, and Personality in Management Research. 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Isidor, R. Kabst, Management Revue: The International Review of Management Studies. 21 (2010) 225–228.","ieee":"H. Steinmetz, C. Schwens, R. Isidor, and R. Kabst, “Enlarging the Focus on the Role of Competencies, Abilities, and Personality in Management Research.,” Management Revue: The International Review of Management Studies., vol. 21, no. 3, pp. 225–228, 2010."},"year":"2010","language":[{"iso":"eng"}],"title":"Enlarging the Focus on the Role of Competencies, Abilities, and Personality in Management Research.","user_id":"46632","volume":21,"date_created":"2018-11-14T10:00:35Z","status":"public","department":[{"_id":"274"}],"publication":"Management Revue: The International Review of Management Studies.","author":[{"last_name":"Steinmetz","id":"43261","first_name":"Holger","full_name":"Steinmetz, Holger"},{"first_name":"C","full_name":"Schwens, C","last_name":"Schwens"},{"last_name":"Isidor","full_name":"Isidor, R","first_name":"R"},{"full_name":"Kabst, Rüdiger","first_name":"Rüdiger","id":"42362","last_name":"Kabst"}]},{"publication":"Die Betriebswirtschaft (DBW).","department":[{"_id":"274"}],"author":[{"first_name":"C","full_name":"Schwens, C","last_name":"Schwens"},{"first_name":"Rüdiger","full_name":"Kabst, Rüdiger","last_name":"Kabst","id":"42362"}],"date_created":"2018-11-14T10:01:56Z","status":"public","volume":5,"user_id":"46632","title":"Internationalisierung junger Technologieunternehmen: Auslandsmärkte und Erfolgsimplikationen.","language":[{"iso":"eng"}],"page":"443-462","type":"journal_article","year":"2010","citation":{"short":"C. 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Die Betriebswirtschaft (DBW)., 5, 443–462.","mla":"Schwens, C., and Rüdiger Kabst. “Internationalisierung Junger Technologieunternehmen: Auslandsmärkte Und Erfolgsimplikationen.” Die Betriebswirtschaft (DBW)., vol. 5, 2010, pp. 443–62.","bibtex":"@article{Schwens_Kabst_2010, title={Internationalisierung junger Technologieunternehmen: Auslandsmärkte und Erfolgsimplikationen.}, volume={5}, journal={Die Betriebswirtschaft (DBW).}, author={Schwens, C and Kabst, Rüdiger}, year={2010}, pages={443–462} }"},"intvolume":" 5","_id":"5556","date_updated":"2022-01-06T07:01:59Z"},{"issue":"2","intvolume":" 24","_id":"5557","date_updated":"2022-01-06T07:01:59Z","language":[{"iso":"eng"}],"year":"2010","citation":{"ieee":"H. Steinmetz and P. Schmidt, “Subjective Health and its Relationship with Working Time and Job Stressors: Sequence or General Factor Model?.,” Work and Stress. , vol. 24, no. 2, pp. 159–178, 2010.","short":"H. Steinmetz, P. Schmidt, Work and Stress. 24 (2010) 159–178.","mla":"Steinmetz, Holger, and P. Schmidt. “Subjective Health and Its Relationship with Working Time and Job Stressors: Sequence or General Factor Model?.” Work and Stress. , vol. 24, no. 2, 2010, pp. 159–78.","bibtex":"@article{Steinmetz_Schmidt_2010, title={Subjective Health and its Relationship with Working Time and Job Stressors: Sequence or General Factor Model?.}, volume={24}, number={2}, journal={Work and Stress. }, author={Steinmetz, Holger and Schmidt, P}, year={2010}, pages={159–178} }","ama":"Steinmetz H, Schmidt P. Subjective Health and its Relationship with Working Time and Job Stressors: Sequence or General Factor Model?. Work and Stress . 2010;24(2):159-178.","apa":"Steinmetz, H., & Schmidt, P. (2010). Subjective Health and its Relationship with Working Time and Job Stressors: Sequence or General Factor Model?. 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"},{"date_updated":"2022-01-06T07:02:06Z","oa":"1","language":[{"iso":"eng"}],"title":"Measuring eTrust in distributed systems - General Concept and Application to Internet Voting","department":[{"_id":"277"}],"_id":"5598","year":"2010","citation":{"chicago":"Volkamer, Melanie, and Guido Schryen. “Measuring ETrust in Distributed Systems - General Concept and Application to Internet Voting.” In Proceedings of the 23rd Bled EConference, 2010.","ama":"Volkamer M, Schryen G. Measuring eTrust in distributed systems - General Concept and Application to Internet Voting. In: Proceedings of the 23rd Bled EConference. ; 2010.","apa":"Volkamer, M., & Schryen, G. (2010). Measuring eTrust in distributed systems - General Concept and Application to Internet Voting. In Proceedings of the 23rd Bled eConference.","mla":"Volkamer, Melanie, and Guido Schryen. “Measuring ETrust in Distributed Systems - General Concept and Application to Internet Voting.” Proceedings of the 23rd Bled EConference, 2010.","bibtex":"@inproceedings{Volkamer_Schryen_2010, title={Measuring eTrust in distributed systems - General Concept and Application to Internet Voting}, booktitle={Proceedings of the 23rd Bled eConference}, author={Volkamer, Melanie and Schryen, Guido}, year={2010} }","short":"M. Volkamer, G. Schryen, in: Proceedings of the 23rd Bled EConference, 2010.","ieee":"M. Volkamer and G. Schryen, “Measuring eTrust in distributed systems - General Concept and Application to Internet Voting,” in Proceedings of the 23rd Bled eConference, 2010."},"type":"conference","abstract":[{"text":"Emerging digital environments and infrastructures, such as distributed services and computing services, have generated new options of communication, information sharing, and resource utilization in past years. Different distributed trust concepts are applied to increase trust in such systems. However, these concepts yield to rather complex architectures which make it difficult to determine which component or system needs to be trusted. This paper presents a novel trust measurement method for distributed systems which enables the t identification of weak points in the overall system architecture. The measurement method includes the specification of a formal trust language and its representation by means of propositional logic formulas. The applicability of the proposed concepts is demonstrated by conducting a case study on the Internet voting system that was used in the 2007 parliamentary elections in Estonia.","lang":"eng"}],"extern":"1","user_id":"61579","ddc":["000"],"file":[{"date_created":"2018-12-11T15:14:05Z","file_name":"06_Schryen.pdf","access_level":"open_access","creator":"hsiemes","file_id":"6185","file_size":243413,"relation":"main_file","content_type":"application/pdf","date_updated":"2018-12-13T15:16:50Z"}],"author":[{"full_name":"Volkamer, Melanie","first_name":"Melanie","last_name":"Volkamer"},{"last_name":"Schryen","id":"72850","first_name":"Guido","full_name":"Schryen, Guido"}],"keyword":["distributed trust concepts","measuring etrust","Internet voting"],"file_date_updated":"2018-12-13T15:16:50Z","publication":"Proceedings of the 23rd Bled eConference","has_accepted_license":"1","status":"public","date_created":"2018-11-14T11:49:50Z"},{"language":[{"iso":"eng"}],"citation":{"chicago":"Schryen, Guido, and Rich Eliot. “Increasing Software Security through Open Source or Closed Source Development? Empirics Suggest That We Have Asked the Wrong Question.” In 43rd Annual Hawaii International Conference on System Sciences, 2010.","ama":"Schryen G, Eliot R. Increasing software security through open source or closed source development? Empirics suggest that we have asked the wrong question. In: 43rd Annual Hawaii International Conference on System Sciences. ; 2010.","apa":"Schryen, G., & Eliot, R. (2010). Increasing software security through open source or closed source development? Empirics suggest that we have asked the wrong question. In 43rd Annual Hawaii International Conference on System Sciences.","bibtex":"@inproceedings{Schryen_Eliot_2010, title={Increasing software security through open source or closed source development? Empirics suggest that we have asked the wrong question}, booktitle={43rd Annual Hawaii International Conference on System Sciences}, author={Schryen, Guido and Eliot, Rich}, year={2010} }","mla":"Schryen, Guido, and Rich Eliot. “Increasing Software Security through Open Source or Closed Source Development? Empirics Suggest That We Have Asked the Wrong Question.” 43rd Annual Hawaii International Conference on System Sciences, 2010.","short":"G. Schryen, R. Eliot, in: 43rd Annual Hawaii International Conference on System Sciences, 2010.","ieee":"G. Schryen and R. Eliot, “Increasing software security through open source or closed source development? Empirics suggest that we have asked the wrong question,” in 43rd Annual Hawaii International Conference on System Sciences, 2010."},"year":"2010","type":"conference","oa":"1","date_updated":"2022-01-06T07:02:14Z","_id":"5631","status":"public","has_accepted_license":"1","date_created":"2018-11-14T14:23:45Z","file":[{"file_name":"vendors behavior - UPDATED IEEE version.pdf","date_created":"2018-12-11T15:23:33Z","access_level":"open_access","file_size":299380,"creator":"hsiemes","file_id":"6192","date_updated":"2018-12-13T15:20:23Z","content_type":"application/pdf","relation":"main_file"}],"author":[{"id":"72850","last_name":"Schryen","full_name":"Schryen, Guido","first_name":"Guido"},{"last_name":"Eliot","full_name":"Eliot, Rich","first_name":"Rich"}],"publication":"43rd Annual Hawaii International Conference on System Sciences","department":[{"_id":"277"}],"file_date_updated":"2018-12-13T15:20:23Z","user_id":"61579","title":"Increasing software security through open source or closed source development? Empirics suggest that we have asked the wrong question","ddc":["000"],"abstract":[{"text":"While many theoretical arguments against or in favor of open source and closed source software development have been presented, the empirical basis for the assessment of arguments and the development of models is still weak. Addressing this research gap, this paper presents the first comprehensive empirical investigation of published vulnerabilities and patches of 17 widely deployed open source and closed source software packages, including operating systems, database systems, web browsers, email clients, and office systems. The empirical analysis uses comprehensive vulnerability data contained in the NIST National Vulnerability Database and a newly compiled data set of vulnerability patches. The results suggest that it is not the particular software development style that determines the severity of vulnerabilities and vendors? patching behavior, but rather the specific application type and the policy of the particular development community, respectively.","lang":"eng"}],"extern":"1"},{"year":"2010","type":"conference","citation":{"apa":"Schryen, G., & Bodenstein, C. (2010). A decision-theoretic foundation of IS business value research. In Proceedings of the 18th European Conference on Information Systems (ECIS 2010).","ama":"Schryen G, Bodenstein C. A decision-theoretic foundation of IS business value research. In: Proceedings of the 18th European Conference on Information Systems (ECIS 2010). ; 2010.","chicago":"Schryen, Guido, and Christian Bodenstein. “A Decision-Theoretic Foundation of IS Business Value Research.” In Proceedings of the 18th European Conference on Information Systems (ECIS 2010), 2010.","bibtex":"@inproceedings{Schryen_Bodenstein_2010, title={A decision-theoretic foundation of IS business value research}, booktitle={Proceedings of the 18th European Conference on Information Systems (ECIS 2010)}, author={Schryen, Guido and Bodenstein, Christian}, year={2010} }","mla":"Schryen, Guido, and Christian Bodenstein. “A Decision-Theoretic Foundation of IS Business Value Research.” Proceedings of the 18th European Conference on Information Systems (ECIS 2010), 2010.","short":"G. Schryen, C. Bodenstein, in: Proceedings of the 18th European Conference on Information Systems (ECIS 2010), 2010.","ieee":"G. Schryen and C. Bodenstein, “A decision-theoretic foundation of IS business value research,” in Proceedings of the 18th European Conference on Information Systems (ECIS 2010), 2010."},"_id":"5632","status":"public","has_accepted_license":"1","date_created":"2018-11-14T14:24:25Z","author":[{"id":"72850","last_name":"Schryen","full_name":"Schryen, Guido","first_name":"Guido"},{"last_name":"Bodenstein","full_name":"Bodenstein, Christian","first_name":"Christian"}],"file_date_updated":"2018-12-13T15:20:37Z","keyword":["Decision theory","IT value","IS assessment","IS evaluation"],"publication":"Proceedings of the 18th European Conference on Information Systems (ECIS 2010)","file":[{"file_name":"IS business value - ECIS - Final Version.pdf","date_created":"2018-12-11T15:24:22Z","access_level":"open_access","file_id":"6193","creator":"hsiemes","file_size":174368,"relation":"main_file","content_type":"application/pdf","date_updated":"2018-12-13T15:20:37Z"}],"ddc":["000"],"user_id":"61579","extern":"1","abstract":[{"text":"Enduring doubts about the value of IS investments reveal that IS researchers have not fully managed to identify and to explain the economic benefits of IS. Three research tasks are essential requisites on the path towards addressing this criticism: the synthesis of knowledge, the identification of lack of knowledge, and the proposition of paths for closing knowledge gaps. This paper considers each of these tasks by a) synthesizing key research findings based on a comprehensive literature review, b) identifying and unfolding key limitations of current research, and c) applying a decision-theoretic perspective, which opens new horizons to IS business value research and shows paths for overcoming the limitations. The adoption of this perspective results in a decision-theoretic foundation of IS business value research and includes the proposition of a consistent terminology and a research model that frames further research.","lang":"eng"}],"language":[{"iso":"eng"}],"oa":"1","date_updated":"2022-01-06T07:02:14Z","department":[{"_id":"277"}],"title":"A decision-theoretic foundation of IS business value research"},{"title":"A Fuzzy Model for IT Security Investments","place":"Bonn","editor":[{"last_name":"C. Freiling","first_name":"Felix","full_name":"C. Freiling, Felix"}],"department":[{"_id":"277"}],"oa":"1","date_updated":"2022-01-06T07:02:18Z","language":[{"iso":"eng"}],"series_title":"GI-Edition: lecture notes in informatics. Proceedings","user_id":"61579","ddc":["000"],"abstract":[{"text":"This paper presents a fuzzy set based decision support model for taking uncertainty into account when making security investment decisions for distributed systems. The proposed model is complementary to robabilistic approaches and useful in situations where probabilistic information is either unavailable or not appropriate to reliably predict future conditions. We ?rst present the speci?cation of a formal security language that allows to specify under which conditions a distributed system is protected against security violations. We show that each term of the security language can be transformed into an equivalent propositional logic term. Then we use propositional logic terms to de?ne a fuzzy set based decision model. This optimization model incorporates uncertainty with regard to the impact of investments on the achieved security levels of components of the distributed system. The model also accounts for budget and security constraints, in order to be applicable in practice.","lang":"eng"}],"extern":"1","status":"public","has_accepted_license":"1","date_created":"2018-11-14T14:35:59Z","volume":170,"file":[{"date_updated":"2018-12-13T15:20:03Z","content_type":"application/pdf","relation":"main_file","file_size":372660,"creator":"hsiemes","file_id":"6190","access_level":"open_access","file_name":"security_fuzzy_LNI Version.pdf","date_created":"2018-12-11T15:22:12Z"}],"author":[{"full_name":"Schryen, Guido","first_name":"Guido","id":"72850","last_name":"Schryen"}],"publisher":"Gesellschaft für Informatik","publication":"Sicherheit 2010 : Sicherheit, Schutz und Zuverl{\\\"a}ssigkeit ; Konferenzband der 5. Jahrestagung des Fachbereichs Sicherheit der Gesellschaft f{\\\"u}r Informatik e.V. (GI), 5. - 7. Oktober 2010 in Berlin","file_date_updated":"2018-12-13T15:20:03Z","_id":"5642","intvolume":" 170","year":"2010","type":"conference","citation":{"ieee":"G. Schryen, “A Fuzzy Model for IT Security Investments,” in Sicherheit 2010 : Sicherheit, Schutz und Zuverl{\\\"a}ssigkeit ; Konferenzband der 5. Jahrestagung des Fachbereichs Sicherheit der Gesellschaft f{\\\"u}r Informatik e.V. (GI), 5. - 7. Oktober 2010 in Berlin, 2010, vol. 170, pp. 289–304.","short":"G. Schryen, in: F. C. Freiling (Ed.), Sicherheit 2010 : Sicherheit, Schutz Und Zuverl{\\\"a}ssigkeit ; Konferenzband Der 5. Jahrestagung Des Fachbereichs Sicherheit Der Gesellschaft F{\\\"u}r Informatik e.V. (GI), 5. - 7. Oktober 2010 in Berlin, Gesellschaft für Informatik, Bonn, 2010, pp. 289–304.","bibtex":"@inproceedings{Schryen_2010, place={Bonn}, series={GI-Edition: lecture notes in informatics. Proceedings}, title={A Fuzzy Model for IT Security Investments}, volume={170}, booktitle={Sicherheit 2010 : Sicherheit, Schutz und Zuverl{\\\"a}ssigkeit ; Konferenzband der 5. Jahrestagung des Fachbereichs Sicherheit der Gesellschaft f{\\\"u}r Informatik e.V. (GI), 5. - 7. Oktober 2010 in Berlin}, publisher={Gesellschaft für Informatik}, author={Schryen, Guido}, editor={C. Freiling, FelixEditor}, year={2010}, pages={289–304}, collection={GI-Edition: lecture notes in informatics. Proceedings} }","mla":"Schryen, Guido. “A Fuzzy Model for IT Security Investments.” Sicherheit 2010 : Sicherheit, Schutz Und Zuverl{\\\"a}ssigkeit ; Konferenzband Der 5. Jahrestagung Des Fachbereichs Sicherheit Der Gesellschaft F{\\\"u}r Informatik e.V. (GI), 5. - 7. Oktober 2010 in Berlin, edited by Felix C. Freiling, vol. 170, Gesellschaft für Informatik, 2010, pp. 289–304.","ama":"Schryen G. A Fuzzy Model for IT Security Investments. In: C. Freiling F, ed. Sicherheit 2010 : Sicherheit, Schutz Und Zuverl{\\\"a}ssigkeit ; Konferenzband Der 5. Jahrestagung Des Fachbereichs Sicherheit Der Gesellschaft F{\\\"u}r Informatik e.V. (GI), 5. - 7. Oktober 2010 in Berlin. Vol 170. GI-Edition: lecture notes in informatics. Proceedings. Bonn: Gesellschaft für Informatik; 2010:289-304.","apa":"Schryen, G. (2010). A Fuzzy Model for IT Security Investments. In F. C. Freiling (Ed.), Sicherheit 2010 : Sicherheit, Schutz und Zuverl{\\\"a}ssigkeit ; Konferenzband der 5. Jahrestagung des Fachbereichs Sicherheit der Gesellschaft f{\\\"u}r Informatik e.V. (GI), 5. - 7. Oktober 2010 in Berlin (Vol. 170, pp. 289–304). Bonn: Gesellschaft für Informatik.","chicago":"Schryen, Guido. “A Fuzzy Model for IT Security Investments.” In Sicherheit 2010 : Sicherheit, Schutz Und Zuverl{\\\"a}ssigkeit ; Konferenzband Der 5. Jahrestagung Des Fachbereichs Sicherheit Der Gesellschaft F{\\\"u}r Informatik e.V. (GI), 5. - 7. Oktober 2010 in Berlin, edited by Felix C. Freiling, 170:289–304. GI-Edition: Lecture Notes in Informatics. Proceedings. Bonn: Gesellschaft für Informatik, 2010."},"page":"289-304"},{"file":[{"content_type":"application/pdf","date_updated":"2018-12-13T15:17:00Z","relation":"main_file","file_size":302340,"creator":"hsiemes","file_id":"6186","access_level":"open_access","file_name":"2010_Book_ScandinavianInformationSystems - Schryen.pdf","date_created":"2018-12-11T15:14:51Z"}],"publication":"Proceedings of the First Scandinavian Conference on Information Systems (SCIS)","file_date_updated":"2018-12-13T15:17:00Z","keyword":["Literature review","Business value","Information systems","Methodology","Theory"],"author":[{"full_name":"Schryen, Guido","first_name":"Guido","id":"72850","last_name":"Schryen"}],"date_created":"2018-11-14T14:36:26Z","has_accepted_license":"1","status":"public","abstract":[{"lang":"eng","text":"Enduring doubts about the value of IS investments reveal that IS researchers have not fully managed to identify and to explain the economic benefits of IS. This paper assumes that literature reviews, which represent a powerful instrument for the identification and synthesis of knowledge, have not tapped their full potential to address this issue due to deficiencies in methodology. The analysis of 18 literature reviews published in pertinent academic outlets during the past 20 years shows such deficiencies. Two of the most critical weaknesses identified are (1) the lack of theory use in most reviews and (2) a weak linkage of reviews, resulting in little progress in theory and framework development. The systematic identification of these weaknesses and the extraction of promising methodological examples from past literature are the main contributions of this work, which supports the composition of more effective literature reviews in future research."}],"extern":"1","user_id":"61579","ddc":["000"],"type":"conference","citation":{"ama":"Schryen G. An Analysis of Literature Reviews on IS Business Value: How Deficiencies in Methodology and Theory Use Resulted in Limited Effectiveness. In: Proceedings of the First Scandinavian Conference on Information Systems (SCIS). ; 2010.","apa":"Schryen, G. (2010). An Analysis of Literature Reviews on IS Business Value: How Deficiencies in Methodology and Theory Use Resulted in Limited Effectiveness. In Proceedings of the First Scandinavian Conference on Information Systems (SCIS).","chicago":"Schryen, Guido. “An Analysis of Literature Reviews on IS Business Value: How Deficiencies in Methodology and Theory Use Resulted in Limited Effectiveness.” In Proceedings of the First Scandinavian Conference on Information Systems (SCIS), 2010.","bibtex":"@inproceedings{Schryen_2010, title={An Analysis of Literature Reviews on IS Business Value: How Deficiencies in Methodology and Theory Use Resulted in Limited Effectiveness}, booktitle={Proceedings of the First Scandinavian Conference on Information Systems (SCIS)}, author={Schryen, Guido}, year={2010} }","mla":"Schryen, Guido. “An Analysis of Literature Reviews on IS Business Value: How Deficiencies in Methodology and Theory Use Resulted in Limited Effectiveness.” Proceedings of the First Scandinavian Conference on Information Systems (SCIS), 2010.","short":"G. Schryen, in: Proceedings of the First Scandinavian Conference on Information Systems (SCIS), 2010.","ieee":"G. Schryen, “An Analysis of Literature Reviews on IS Business Value: How Deficiencies in Methodology and Theory Use Resulted in Limited Effectiveness,” in Proceedings of the First Scandinavian Conference on Information Systems (SCIS), 2010."},"year":"2010","_id":"5643","department":[{"_id":"277"}],"title":"An Analysis of Literature Reviews on IS Business Value: How Deficiencies in Methodology and Theory Use Resulted in Limited Effectiveness","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:02:18Z","oa":"1"},{"date_updated":"2022-01-06T07:02:19Z","oa":"1","language":[{"iso":"eng"}],"title":"Preserving knowledge on IS business value: what literature reviews have done","department":[{"_id":"277"}],"_id":"5644","intvolume":" 52","issue":"4","year":"2010","type":"journal_article","citation":{"ieee":"G. Schryen, “Preserving knowledge on IS business value: what literature reviews have done,” Business \\& Information Systems Engineering (BISE), vol. 52, no. 4, pp. 225–237, 2010.","short":"G. Schryen, Business \\& Information Systems Engineering (BISE) 52 (2010) 225–237.","mla":"Schryen, Guido. “Preserving Knowledge on IS Business Value: What Literature Reviews Have Done.” Business \\& Information Systems Engineering (BISE), vol. 52, no. 4, Springer, 2010, pp. 225–37.","bibtex":"@article{Schryen_2010, title={Preserving knowledge on IS business value: what literature reviews have done}, volume={52}, number={4}, journal={Business \\& Information Systems Engineering (BISE)}, publisher={Springer}, author={Schryen, Guido}, year={2010}, pages={225–237} }","ama":"Schryen G. Preserving knowledge on IS business value: what literature reviews have done. Business \\& Information Systems Engineering (BISE). 2010;52(4):225-237.","apa":"Schryen, G. (2010). Preserving knowledge on IS business value: what literature reviews have done. Business \\& Information Systems Engineering (BISE), 52(4), 225–237.","chicago":"Schryen, Guido. “Preserving Knowledge on IS Business Value: What Literature Reviews Have Done.” Business \\& Information Systems Engineering (BISE) 52, no. 4 (2010): 225–37."},"page":"225-237","abstract":[{"lang":"eng","text":"The economic relevance of information systems has been studied for many years and has attracted an abundance of research papers. However, the ?productivity paradoxon? of the 90s, Carr?s widely recognized paper ?IT doesn?t matter?, and several studies that do not find a positive correlation between IS investments and economic performance reveal long-lasting difficulties for IS researchers to explain ?IS business value?. Business executives and researchers also continue to question the value of IS investments. This raises the question of whether literature reviews have tapped their potential to address the concerns by covering key research areas of IS business value and preserving their key findings. In order to address this question, this paper identifies and describes 12 key research areas, and synthesizes what literature reviews published in pertinent academic outlets have done to preserve knowledge. The analysis of 22 literature reviews shows that some crucial areas have not been (sufficiently) covered. They provide fertile areas for future literature reviews. As this work is based on the results of more than 200 research papers, it is capable of drawing a comprehensive picture of the current state-of-the-art in IS business value research."}],"extern":"1","user_id":"61579","ddc":["000"],"file":[{"date_created":"2018-12-11T15:19:37Z","file_name":"BISE-PreservingknowledgeonISbusinessvalue-Manuscript-1.pdf","access_level":"open_access","file_id":"6187","creator":"hsiemes","file_size":525443,"relation":"main_file","date_updated":"2018-12-13T15:17:12Z","content_type":"application/pdf"}],"author":[{"id":"72850","last_name":"Schryen","full_name":"Schryen, Guido","first_name":"Guido"}],"publisher":"Springer","publication":"Business \\& Information Systems Engineering (BISE)","file_date_updated":"2018-12-13T15:17:12Z","keyword":["Business value","Information systems","Literature review","Meta review"],"status":"public","has_accepted_license":"1","date_created":"2018-11-14T14:38:02Z","volume":52},{"department":[{"_id":"277"}],"title":"Ökonomischer Wert von Informationssystemen - Beitrag von Literatur-Reviews zum Wissenserhalt ( = Preserving Knowledge on IS Business Value. What Literature Reviews Have Done)","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:02:19Z","oa":"1","file":[{"file_name":"Schryen2010_Article_ÖkonomischerWertVonInformation.pdf","date_created":"2018-12-11T15:21:36Z","access_level":"open_access","file_size":850718,"creator":"hsiemes","file_id":"6189","date_updated":"2018-12-13T15:19:50Z","content_type":"application/pdf","relation":"main_file"}],"author":[{"full_name":"Schryen, Guido","first_name":"Guido","id":"72850","last_name":"Schryen"}],"publisher":"Gabler; Springer","publication":"Wirtschaftsinformatik","file_date_updated":"2018-12-13T15:19:50Z","status":"public","has_accepted_license":"1","date_created":"2018-11-14T14:38:45Z","volume":52,"abstract":[{"text":"The economic relevance of information systems has been studied for many years and has attracted an abundance of research papers. However, the ?productivity paradoxon? of the 1990s, Carr?s widely recognized paper ?IT doesn?t matter?, and several studies that do not find a positive correlation between IS investments and economic performance reveal long-lasting difficulties for IS researchers to explain ?IS business value?. Business executives and researchers also continue to question the value of IS investments. This raises the question of whether literature reviews have tapped their potential to address the concerns by covering key research areas of IS business value and preserving their key findings. In order to address this question, this paper identifies and describes 12 key research areas, and synthesizes what literature reviews published in pertinent academic outlets have done to preserve knowledge. The analysis of 22 literature reviews shows that some crucial areas have not been (sufficiently) covered. They provide fertile areas for future literature reviews. As this work is based on the results of more than 200 research papers, it is capable of drawing a comprehensive picture of the current state-of-the-art in IS business value research.","lang":"eng"}],"extern":"1","user_id":"61579","ddc":["000"],"type":"journal_article","citation":{"ieee":"G. Schryen, “Ökonomischer Wert von Informationssystemen - Beitrag von Literatur-Reviews zum Wissenserhalt ( = Preserving Knowledge on IS Business Value. What Literature Reviews Have Done),” Wirtschaftsinformatik, vol. 52, no. 4, pp. 225–237, 2010.","short":"G. Schryen, Wirtschaftsinformatik 52 (2010) 225–237.","mla":"Schryen, Guido. “Ökonomischer Wert von Informationssystemen - Beitrag von Literatur-Reviews Zum Wissenserhalt ( = Preserving Knowledge on IS Business Value. What Literature Reviews Have Done).” Wirtschaftsinformatik, vol. 52, no. 4, Gabler; Springer, 2010, pp. 225–37.","bibtex":"@article{Schryen_2010, title={Ökonomischer Wert von Informationssystemen - Beitrag von Literatur-Reviews zum Wissenserhalt ( = Preserving Knowledge on IS Business Value. What Literature Reviews Have Done)}, volume={52}, number={4}, journal={Wirtschaftsinformatik}, publisher={Gabler; Springer}, author={Schryen, Guido}, year={2010}, pages={225–237} }","chicago":"Schryen, Guido. “Ökonomischer Wert von Informationssystemen - Beitrag von Literatur-Reviews Zum Wissenserhalt ( = Preserving Knowledge on IS Business Value. What Literature Reviews Have Done).” Wirtschaftsinformatik 52, no. 4 (2010): 225–37.","apa":"Schryen, G. (2010). Ökonomischer Wert von Informationssystemen - Beitrag von Literatur-Reviews zum Wissenserhalt ( = Preserving Knowledge on IS Business Value. What Literature Reviews Have Done). Wirtschaftsinformatik, 52(4), 225–237.","ama":"Schryen G. Ökonomischer Wert von Informationssystemen - Beitrag von Literatur-Reviews zum Wissenserhalt ( = Preserving Knowledge on IS Business Value. What Literature Reviews Have Done). Wirtschaftsinformatik. 2010;52(4):225-237."},"year":"2010","page":"225-237","_id":"5645","intvolume":" 52","issue":"4"},{"date_updated":"2022-01-06T07:03:06Z","_id":"6475","page":"133-149","type":"journal_article","year":"2010","citation":{"ieee":"H. Ertl and H.-H. Kremer, “Educational change and innovative teaching practice: a study of the impact of reforms on the work of lectures in vocational education and training in England and Germany,” Orbis Scholae, Educational Change in the global context, pp. 133–149, 2010.","short":"H. Ertl, H.-H. Kremer, Orbis Scholae, Educational Change in the global context (2010) 133–149.","bibtex":"@article{Ertl_Kremer_2010, title={Educational change and innovative teaching practice: a study of the impact of reforms on the work of lectures in vocational education and training in England and Germany}, journal={Orbis Scholae, Educational Change in the global context}, author={Ertl, H. and Kremer, H.-Hugo}, year={2010}, pages={133–149} }","mla":"Ertl, H., and H. Hugo Kremer. “Educational change and innovative teaching practice: a study of the impact of reforms on the work of lectures in vocational education and training in England and Germany.” Orbis Scholae, Educational Change in the global context, 2010, pp. 133–49.","chicago":"Ertl, H., and H.-Hugo Kremer. “Educational change and innovative teaching practice: a study of the impact of reforms on the work of lectures in vocational education and training in England and Germany.” Orbis Scholae, Educational Change in the global context, 2010, 133–49.","apa":"Ertl, H., & Kremer, H.-H. (2010). Educational change and innovative teaching practice: a study of the impact of reforms on the work of lectures in vocational education and training in England and Germany. Orbis Scholae, Educational Change in the global context, 133–149.","ama":"Ertl H, Kremer H-H. Educational change and innovative teaching practice: a study of the impact of reforms on the work of lectures in vocational education and training in England and Germany. Orbis Scholae, Educational Change in the global context. 2010:133-149."},"language":[{"iso":"ger"}],"title":"Educational change and innovative teaching practice: a study of the impact of reforms on the work of lectures in vocational education and training in England and Germany","user_id":"74378","publication":"Orbis Scholae, Educational Change in the global context","department":[{"_id":"211"}],"author":[{"first_name":"H.","full_name":"Ertl, H.","last_name":"Ertl"},{"first_name":"H.-Hugo","full_name":"Kremer, H.-Hugo","last_name":"Kremer","id":"15280"}],"publication_identifier":{"issn":["1802-4637"]},"date_created":"2019-01-02T12:30:20Z","status":"public"},{"_id":"6476","date_updated":"2022-01-06T07:03:06Z","language":[{"iso":"ger"}],"type":"book_chapter","year":"2010","citation":{"short":"H.-H. Kremer, A. Zoyke, in: Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, Paderborn, 2010, pp. 9–28.","ieee":"H.-H. Kremer and A. Zoyke, “Individuelle Förderung zur Kompetenzentwicklung in der beruflichen Bildung - Überlegungen zur Grundlegung eines Forschungs- und Entwicklungsbereichs,” in Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, Paderborn, 2010, pp. 9–28.","ama":"Kremer H-H, Zoyke A. Individuelle Förderung zur Kompetenzentwicklung in der beruflichen Bildung - Überlegungen zur Grundlegung eines Forschungs- und Entwicklungsbereichs. In: Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten. Paderborn; 2010:9-28.","apa":"Kremer, H.-H., & Zoyke, A. (2010). Individuelle Förderung zur Kompetenzentwicklung in der beruflichen Bildung - Überlegungen zur Grundlegung eines Forschungs- und Entwicklungsbereichs. In Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten (pp. 9–28). Paderborn.","chicago":"Kremer, H.-Hugo, and A. Zoyke. “Individuelle Förderung zur Kompetenzentwicklung in der beruflichen Bildung - Überlegungen zur Grundlegung eines Forschungs- und Entwicklungsbereichs.” In Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, 9–28. Paderborn, 2010.","bibtex":"@inbook{Kremer_Zoyke_2010, place={Paderborn}, title={Individuelle Förderung zur Kompetenzentwicklung in der beruflichen Bildung - Überlegungen zur Grundlegung eines Forschungs- und Entwicklungsbereichs}, booktitle={Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten}, author={Kremer, H.-Hugo and Zoyke, A.}, year={2010}, pages={9–28} }","mla":"Kremer, H. Hugo, and A. Zoyke. “Individuelle Förderung zur Kompetenzentwicklung in der beruflichen Bildung - Überlegungen zur Grundlegung eines Forschungs- und Entwicklungsbereichs.” Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, 2010, pp. 9–28."},"page":"9-28","place":"Paderborn","user_id":"74378","title":"Individuelle Förderung zur Kompetenzentwicklung in der beruflichen Bildung - Überlegungen zur Grundlegung eines Forschungs- und Entwicklungsbereichs","author":[{"last_name":"Kremer","id":"15280","first_name":"H.-Hugo","full_name":"Kremer, H.-Hugo"},{"first_name":"A.","full_name":"Zoyke, A.","last_name":"Zoyke"}],"publication":"Individuelle Förderung in der beruflichen Bildung. 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Neue Medien als Katalysator individueller Förderung in der Berufsbildung. In Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten (pp. 29–54). Paderborn.","ama":"Kremer H-H. Neue Medien als Katalysator individueller Förderung in der Berufsbildung. In: Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten. Paderborn; 2010:29-54.","mla":"Kremer, H. Hugo. “Neue Medien als Katalysator individueller Förderung in der Berufsbildung.” Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, 2010, pp. 29–54.","bibtex":"@inbook{Kremer_2010, place={Paderborn}, title={Neue Medien als Katalysator individueller Förderung in der Berufsbildung}, booktitle={Individuelle Förderung in der beruflichen Bildung. 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Zoyke. “Individuelle Förderung im Reha-Vorbereitungslehrgang für besondere Zielgruppen - Entwicklung und Erprobung didaktisch-methodischer Reformsätze.” Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, 2010, pp. 71–122.","bibtex":"@inbook{Kremer_Zoyke_2010, place={Paderborn}, title={Individuelle Förderung im Reha-Vorbereitungslehrgang für besondere Zielgruppen - Entwicklung und Erprobung didaktisch-methodischer Reformsätze}, booktitle={Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten}, author={Kremer, H.-Hugo and Zoyke, A.}, year={2010}, pages={71–122} }","ama":"Kremer H-H, Zoyke A. Individuelle Förderung im Reha-Vorbereitungslehrgang für besondere Zielgruppen - Entwicklung und Erprobung didaktisch-methodischer Reformsätze. In: Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten. Paderborn; 2010:71-122.","apa":"Kremer, H.-H., & Zoyke, A. (2010). Individuelle Förderung im Reha-Vorbereitungslehrgang für besondere Zielgruppen - Entwicklung und Erprobung didaktisch-methodischer Reformsätze. In Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten (pp. 71–122). Paderborn.","chicago":"Kremer, H.-Hugo, and A. Zoyke. “Individuelle Förderung im Reha-Vorbereitungslehrgang für besondere Zielgruppen - Entwicklung und Erprobung didaktisch-methodischer Reformsätze.” In Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, 71–122. Paderborn, 2010.","ieee":"H.-H. Kremer and A. Zoyke, “Individuelle Förderung im Reha-Vorbereitungslehrgang für besondere Zielgruppen - Entwicklung und Erprobung didaktisch-methodischer Reformsätze,” in Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, Paderborn, 2010, pp. 71–122.","short":"H.-H. Kremer, A. Zoyke, in: Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, Paderborn, 2010, pp. 71–122."},"year":"2010","type":"book_chapter"},{"date_created":"2019-01-02T12:44:22Z","status":"public","department":[{"_id":"211"}],"publication":"Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten","author":[{"full_name":"de Groot, C.","first_name":"C.","last_name":"de Groot"},{"first_name":"H.-Hugo","full_name":"Kremer, H.-Hugo","last_name":"Kremer","id":"15280"},{"last_name":"Zoyke","first_name":"A.","full_name":"Zoyke, A."}],"title":"Individuelle Förderplanung - Rezeption und Einsatz im Übergangssystem","user_id":"74378","place":"Paderborn","page":"123-144","year":"2010","citation":{"short":"C. de Groot, H.-H. Kremer, A. Zoyke, in: Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, Paderborn, 2010, pp. 123–144.","ieee":"C. de Groot, H.-H. Kremer, and A. Zoyke, “Individuelle Förderplanung - Rezeption und Einsatz im Übergangssystem,” in Individuelle Förderung in der beruflichen Bildung. 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Paderborn, 2010.","bibtex":"@inbook{de Groot_Kremer_Zoyke_2010, place={Paderborn}, title={Individuelle Förderplanung - Rezeption und Einsatz im Übergangssystem}, booktitle={Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten}, author={de Groot, C. and Kremer, H.-Hugo and Zoyke, A.}, year={2010}, pages={123–144} }","mla":"de Groot, C., et al. “Individuelle Förderplanung - Rezeption und Einsatz im Übergangssystem.” Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, 2010, pp. 123–44."},"type":"book_chapter","language":[{"iso":"ger"}],"date_updated":"2022-01-06T07:03:06Z","_id":"6479"},{"date_updated":"2022-01-06T07:03:06Z","_id":"6480","type":"book_chapter","citation":{"short":"H.-H. Kremer, in: Individuelle Förderung in der beruflichen Bildung. 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Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten (pp. 145–164). Paderborn.","ama":"Kremer H-H. Berufsorientierung als Herausforderung und Chance für die schulisch strukturierten Bildungsgänge des Übergangssystems. In: Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten. Paderborn; 2010:145-164.","mla":"Kremer, H. Hugo. “Berufsorientierung als Herausforderung und Chance für die schulisch strukturierten Bildungsgänge des Übergangssystems.” Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, 2010, pp. 145–64.","bibtex":"@inbook{Kremer_2010, place={Paderborn}, title={Berufsorientierung als Herausforderung und Chance für die schulisch strukturierten Bildungsgänge des Übergangssystems}, booktitle={Individuelle Förderung in der beruflichen Bildung. 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Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten","editor":[{"full_name":"Kremer, H.-Hugo","first_name":"H.-Hugo","last_name":"Kremer"},{"first_name":"A.","full_name":"Zoyke, A.","last_name":"Zoyke"}],"status":"public","date_created":"2019-01-09T09:57:07Z","place":"Paderborn","title":"Wie der Übergang gelingen kann - Empirische Explorationen zur beruflichen Orientierung von Jugendlichen im Übergangssystem","user_id":"44715","citation":{"apa":"Kremer, H.-H., & Rüschen, E. (2010). Wie der Übergang gelingen kann - Empirische Explorationen zur beruflichen Orientierung von Jugendlichen im Übergangssystem. In H.-H. Kremer & A. Zoyke (Eds.), Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten (pp. 165–184). Paderborn.","ama":"Kremer H-H, Rüschen E. Wie der Übergang gelingen kann - Empirische Explorationen zur beruflichen Orientierung von Jugendlichen im Übergangssystem. In: Kremer H-H, Zoyke A, eds. Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten. Paderborn; 2010:165-184.","chicago":"Kremer, H.-Hugo, and E. Rüschen. “Wie der Übergang gelingen kann - Empirische Explorationen zur beruflichen Orientierung von Jugendlichen im Übergangssystem.” In Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, edited by H.-Hugo Kremer and A. Zoyke, 165–84. Paderborn, 2010.","bibtex":"@inbook{Kremer_Rüschen_2010, place={Paderborn}, title={Wie der Übergang gelingen kann - Empirische Explorationen zur beruflichen Orientierung von Jugendlichen im Übergangssystem}, booktitle={Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten}, author={Kremer, H.-Hugo and Rüschen, E.}, editor={Kremer, H.-Hugo and Zoyke, A.Editors}, year={2010}, pages={165–184} }","mla":"Kremer, H. Hugo, and E. Rüschen. “Wie der Übergang gelingen kann - Empirische Explorationen zur beruflichen Orientierung von Jugendlichen im Übergangssystem.” Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, edited by H.-Hugo Kremer and A. Zoyke, 2010, pp. 165–84.","short":"H.-H. Kremer, E. Rüschen, in: H.-H. Kremer, A. Zoyke (Eds.), Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, Paderborn, 2010, pp. 165–184.","ieee":"H.-H. Kremer and E. Rüschen, “Wie der Übergang gelingen kann - Empirische Explorationen zur beruflichen Orientierung von Jugendlichen im Übergangssystem,” in Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, H.-H. Kremer and A. Zoyke, Eds. Paderborn, 2010, pp. 165–184."},"year":"2010","type":"book_chapter","page":"165-184","language":[{"iso":"ger"}],"_id":"6531","date_updated":"2022-01-06T07:03:10Z"},{"user_id":"44715","title":"Kollektivstrukturen als Gestaltungselemente in der wirtschaftspädagogischen Begleitforschung ","place":"Paderborn","date_created":"2019-01-09T13:18:45Z","status":"public","editor":[{"last_name":"Kremer","full_name":"Kremer, H.-Hugo","first_name":"H.-Hugo"},{"last_name":"Zoyke","full_name":"Zoyke, A.","first_name":"A."}],"department":[{"_id":"211"}],"publication":"Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten","author":[{"id":"21118","last_name":"Beutner","full_name":"Beutner, Marc","first_name":"Marc"},{"full_name":"Kremer, H.-Hugo","first_name":"H.-Hugo","id":"15280","last_name":"Kremer"}],"_id":"6546","date_updated":"2022-01-06T07:03:11Z","language":[{"iso":"ger"}],"page":"185-2014","type":"book_chapter","citation":{"mla":"Beutner, Marc, and H. Hugo Kremer. “Kollektivstrukturen als Gestaltungselemente in der wirtschaftspädagogischen Begleitforschung .” Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, edited by H.-Hugo Kremer and A. Zoyke, 2010, pp. 185–2014.","bibtex":"@inbook{Beutner_Kremer_2010, place={Paderborn}, title={Kollektivstrukturen als Gestaltungselemente in der wirtschaftspädagogischen Begleitforschung }, booktitle={Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten}, author={Beutner, Marc and Kremer, H.-Hugo}, editor={Kremer, H.-Hugo and Zoyke, A.Editors}, year={2010}, pages={185–2014} }","apa":"Beutner, M., & Kremer, H.-H. (2010). Kollektivstrukturen als Gestaltungselemente in der wirtschaftspädagogischen Begleitforschung . In H.-H. Kremer & A. Zoyke (Eds.), Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten (pp. 185–2014). Paderborn.","ama":"Beutner M, Kremer H-H. Kollektivstrukturen als Gestaltungselemente in der wirtschaftspädagogischen Begleitforschung . In: Kremer H-H, Zoyke A, eds. Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten. Paderborn; 2010:185-2014.","chicago":"Beutner, Marc, and H.-Hugo Kremer. “Kollektivstrukturen als Gestaltungselemente in der wirtschaftspädagogischen Begleitforschung .” In Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, edited by H.-Hugo Kremer and A. Zoyke, 185–2014. Paderborn, 2010.","ieee":"M. Beutner and H.-H. Kremer, “Kollektivstrukturen als Gestaltungselemente in der wirtschaftspädagogischen Begleitforschung ,” in Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, H.-H. Kremer and A. Zoyke, Eds. Paderborn, 2010, pp. 185–2014.","short":"M. Beutner, H.-H. Kremer, in: H.-H. Kremer, A. Zoyke (Eds.), Individuelle Förderung in der beruflichen Bildung. Grundlegung und Annäherung im Kontext von Forschungs- und Entwicklungsprojekten, Paderborn, 2010, pp. 185–2014."},"year":"2010"},{"abstract":[{"text":"Strömungsbasierte Mischprozesse sind grundlegender Bestandteil vieler chemischer Prozesse. Realisierbare Mischzeiten reichen von einigen Millisekunden bis zu Sekunden, wobei die vollständige Homogenisierung oft nicht sichergestellt ist. Werden kinetische Parameter chemischer Reaktionen dieses Zeitskalenbereichs ohne Berücksichtigung der Mischprozesse bestimmt, sind sie mischungsmaskiert und geben die inhärente chemische Kinetik nicht wieder. In dieser Arbeit wird die Validierung und Anwendung einer Methode zur Bestimmung inhärenter chemischer Kinetiken von in Flüssigphase ablaufenden chemischen Reaktionen im stationären, laminaren Flachbettmikroreaktor vorgestellt. Der verfolgte Ansatz basiert auf der mechanistischen Modellierung der Molmengen unter Berücksichtigung von Konvektion, Diffusion und Reaktion und der Bestimmung der unbekannten Parameter durch Anpassung des Modells an experimentell ermittelte Konzentrationsverläufe.","lang":"ger"}],"article_type":"original","user_id":"49428","publication":"Chemie Ingenieur Technik","author":[{"first_name":"H.-J.","full_name":"Warnecke, H.-J.","last_name":"Warnecke"},{"last_name":"Bothe","first_name":"D.","full_name":"Bothe, D."},{"id":"606","last_name":"Zrenner","full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","first_name":"Artur"},{"id":"53","last_name":"Berth","full_name":"Berth, Gerhard","first_name":"Gerhard"},{"last_name":"Hüsch","full_name":"Hüsch, K.-P.","first_name":"K.-P."}],"publisher":"Wiley","date_created":"2019-01-10T10:13:09Z","status":"public","volume":82,"_id":"6619","intvolume":" 82","issue":"3","page":"251-258","year":"2010","type":"journal_article","citation":{"short":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, K.-P. Hüsch, Chemie Ingenieur Technik 82 (2010) 251–258.","ieee":"H.-J. Warnecke, D. Bothe, A. Zrenner, G. Berth, and K.-P. Hüsch, “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*,” Chemie Ingenieur Technik, vol. 82, no. 3, pp. 251–258, 2010.","chicago":"Warnecke, H.-J., D. Bothe, Artur Zrenner, Gerhard Berth, and K.-P. Hüsch. “Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*.” Chemie Ingenieur Technik 82, no. 3 (2010): 251–58. https://doi.org/10.1002/cite.200900169.","apa":"Warnecke, H.-J., Bothe, D., Zrenner, A., Berth, G., & Hüsch, K.-P. (2010). Modellbasierte Bestimmung lokal gültiger Kinetiken chemischer Reaktionen in Flüssigphase mittels Flachbettmikroreaktor*. 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