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Class, Knowledge, and New Media. <i>Media, Culture &#38; Society</i>. 2010;32(1):141-150.","bibtex":"@article{Fuchs_2010, title={Class, Knowledge, and New Media}, volume={32}, number={1}, journal={Media, Culture &#38; Society}, author={Fuchs, Christian}, year={2010}, pages={141–150} }","mla":"Fuchs, Christian. “Class, Knowledge, and New Media.” <i>Media, Culture &#38; Society</i>, vol. 32, no. 1, 2010, pp. 141–50."},"type":"journal_article","department":[{"_id":"136"}],"date_created":"2023-02-03T23:59:30Z"},{"date_updated":"2023-03-08T05:45:15Z","title":"Foundations of the Critique of the Political Economy of Surveillance","status":"public","year":"2010","publication_identifier":{"issn":["2219-603X"]},"author":[{"id":"21863","full_name":"Fuchs, Christian","orcid":"0000-0003-0589-4579","last_name":"Fuchs","first_name":"Christian"}],"user_id":"49063","publisher":"Unified Theory of Information Research Group. 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The Internet &#38; Surveillance Research Paper No. 2, 2010.","short":"C. Fuchs, Foundations of the Critique of the Political Economy of Surveillance, Unified Theory of Information Research Group. The Internet &#38; Surveillance Research Paper No. 2, Vienna, 2010.","apa":"Fuchs, C. (2010). <i>Foundations of the Critique of the Political Economy of Surveillance</i>. Unified Theory of Information Research Group. The Internet &#38; Surveillance Research Paper No. 2.","ieee":"C. Fuchs, <i>Foundations of the Critique of the Political Economy of Surveillance</i>. Vienna: Unified Theory of Information Research Group. The Internet &#38; Surveillance Research Paper No. 2, 2010."},"type":"report","department":[{"_id":"136"}],"place":"Vienna","date_created":"2023-03-06T03:45:30Z"},{"date_created":"2023-03-06T03:46:18Z","place":"Vienna","department":[{"_id":"136"}],"type":"report","citation":{"bibtex":"@book{Fuchs_2010, place={Vienna}, title={How Can Surveillance Be Defined? 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Remarks on Theoretical Foundations of Surveillance Studies, Unified Theory of Information Research Group. The Internet &#38; Surveillance Research Paper No. 1, Vienna, 2010.","ieee":"C. Fuchs, <i>How Can Surveillance Be Defined? Remarks on Theoretical Foundations of Surveillance Studies</i>. Vienna: Unified Theory of Information Research Group. The Internet &#38; Surveillance Research Paper No. 1, 2010.","apa":"Fuchs, C. (2010). <i>How Can Surveillance Be Defined? Remarks on Theoretical Foundations of Surveillance Studies</i>. Unified Theory of Information Research Group. The Internet &#38; Surveillance Research Paper No. 1."},"extern":"1","publisher":"Unified Theory of Information Research Group. 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Allmer, Critical Privacy Studies and the Internet, Vienna, 2010.","chicago":"Allmer, Thomas. <i>Critical Privacy Studies and the Internet</i>. Vienna, 2010.","apa":"Allmer, T. (2010). <i>Critical Privacy Studies and the Internet</i>.","ieee":"T. Allmer, <i>Critical Privacy Studies and the Internet</i>. Vienna, 2010.","ama":"Allmer T. <i>Critical Privacy Studies and the Internet</i>.; 2010.","bibtex":"@book{Allmer_2010, place={Vienna}, title={Critical Privacy Studies and the Internet}, author={Allmer, Thomas}, year={2010} }","mla":"Allmer, Thomas. <i>Critical Privacy Studies and the Internet</i>. 2010."},"type":"report","department":[{"_id":"136"}],"date_created":"2023-03-13T15:21:15Z","place":"Vienna"},{"citation":{"mla":"Pannemannn, C., et al. “Organic Field-Effect-Transistors with Pentacene for Radio-Controlled-Price-Tag Applications.” <i>Advances in Radio Science</i>, vol. 1, Copernicus GmbH, 2010, pp. 219–21, doi:<a href=\"https://doi.org/10.5194/ars-1-219-2003\">10.5194/ars-1-219-2003</a>.","ama":"Pannemannn C, Diekmann T, Hilleringmann U. Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications. <i>Advances in Radio Science</i>. 2010;1:219-221. doi:<a href=\"https://doi.org/10.5194/ars-1-219-2003\">10.5194/ars-1-219-2003</a>","bibtex":"@article{Pannemannn_Diekmann_Hilleringmann_2010, title={Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications}, volume={1}, DOI={<a href=\"https://doi.org/10.5194/ars-1-219-2003\">10.5194/ars-1-219-2003</a>}, journal={Advances in Radio Science}, publisher={Copernicus GmbH}, author={Pannemannn, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2010}, pages={219–221} }","apa":"Pannemannn, C., Diekmann, T., &#38; Hilleringmann, U. (2010). Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications. <i>Advances in Radio Science</i>, <i>1</i>, 219–221. <a href=\"https://doi.org/10.5194/ars-1-219-2003\">https://doi.org/10.5194/ars-1-219-2003</a>","ieee":"C. Pannemannn, T. Diekmann, and U. Hilleringmann, “Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications,” <i>Advances in Radio Science</i>, vol. 1, pp. 219–221, 2010, doi: <a href=\"https://doi.org/10.5194/ars-1-219-2003\">10.5194/ars-1-219-2003</a>.","chicago":"Pannemannn, C., T. Diekmann, and Ulrich Hilleringmann. “Organic Field-Effect-Transistors with Pentacene for Radio-Controlled-Price-Tag Applications.” <i>Advances in Radio Science</i> 1 (2010): 219–21. <a href=\"https://doi.org/10.5194/ars-1-219-2003\">https://doi.org/10.5194/ars-1-219-2003</a>.","short":"C. Pannemannn, T. Diekmann, U. Hilleringmann, Advances in Radio Science 1 (2010) 219–221."},"status":"public","publisher":"Copernicus GmbH","_id":"39869","page":"219-221","volume":1,"user_id":"20179","publication":"Advances in Radio Science","abstract":[{"lang":"eng","text":"<jats:p>Abstract. This letter presents organic thin-film-transistors (OTFT) using the small organic molecule Pentacene targeting applications like radio controlled identification tags. Simple OTFTs as well as inverter circuits based on a pconducting silicon wafer substrate are presented. Comparing PECVD oxide and LTO as dielectric, only LTO deposited layers provide sufficient electrical stability. PECVD oxides show defects called “pin-holes\", leading to short circuiting through the gate dielectrics. OTFTs of L=1µm/W=1000µm were prepared providing Ids = 61µA at –40Vds and –40Vgs, a subthreshold slope of 10.3 V/dec and an on-offratio of 102. The inverter circuits using insulated gate contacts switch from VA=–10V to VA=–3V output voltage when the input voltage is varied from VE=0V to VE=–8V at a supplied voltage of VB=–10V.\r\n                    </jats:p>"}],"date_created":"2023-01-25T09:00:14Z","department":[{"_id":"59"}],"type":"journal_article","author":[{"full_name":"Pannemannn, C.","last_name":"Pannemannn","first_name":"C."},{"full_name":"Diekmann, T.","first_name":"T.","last_name":"Diekmann"},{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"}],"publication_identifier":{"issn":["1684-9973"]},"title":"Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications","year":"2010","intvolume":"         1","date_updated":"2023-03-21T10:04:29Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.5194/ars-1-219-2003"},{"date_created":"2023-01-24T12:05:24Z","department":[{"_id":"59"}],"type":"conference","citation":{"ieee":"K. Wolff and U. Hilleringmann, “Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors,” 2010, doi: <a href=\"https://doi.org/10.1109/essderc.2010.5618383\">10.1109/essderc.2010.5618383</a>.","mla":"Wolff, Karsten, and Ulrich Hilleringmann. “Analysis and Modeling of Pseudo-Short-Channel Effects in ZnO-Nanoparticle Thin-Film Transistors.” <i>2010 Proceedings of the European Solid State Device Research Conference</i>, IEEE, 2010, doi:<a href=\"https://doi.org/10.1109/essderc.2010.5618383\">10.1109/essderc.2010.5618383</a>.","apa":"Wolff, K., &#38; Hilleringmann, U. (2010). Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors. <i>2010 Proceedings of the European Solid State Device Research Conference</i>. <a href=\"https://doi.org/10.1109/essderc.2010.5618383\">https://doi.org/10.1109/essderc.2010.5618383</a>","bibtex":"@inproceedings{Wolff_Hilleringmann_2010, title={Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors}, DOI={<a href=\"https://doi.org/10.1109/essderc.2010.5618383\">10.1109/essderc.2010.5618383</a>}, booktitle={2010 Proceedings of the European Solid State Device Research Conference}, publisher={IEEE}, author={Wolff, Karsten and Hilleringmann, Ulrich}, year={2010} }","ama":"Wolff K, Hilleringmann U. Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors. In: <i>2010 Proceedings of the European Solid State Device Research Conference</i>. IEEE; 2010. doi:<a href=\"https://doi.org/10.1109/essderc.2010.5618383\">10.1109/essderc.2010.5618383</a>","short":"K. Wolff, U. Hilleringmann, in: 2010 Proceedings of the European Solid State Device Research Conference, IEEE, 2010.","chicago":"Wolff, Karsten, and Ulrich Hilleringmann. “Analysis and Modeling of Pseudo-Short-Channel Effects in ZnO-Nanoparticle Thin-Film Transistors.” In <i>2010 Proceedings of the European Solid State Device Research Conference</i>. IEEE, 2010. <a href=\"https://doi.org/10.1109/essderc.2010.5618383\">https://doi.org/10.1109/essderc.2010.5618383</a>."},"publication":"2010 Proceedings of the European Solid State Device Research Conference","publisher":"IEEE","_id":"39540","language":[{"iso":"eng"}],"doi":"10.1109/essderc.2010.5618383","user_id":"20179","author":[{"full_name":"Wolff, Karsten","last_name":"Wolff","first_name":"Karsten"},{"last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich","id":"20179"}],"title":"Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors","status":"public","year":"2010","date_updated":"2023-03-21T10:13:34Z","publication_status":"published"},{"volume":1416,"user_id":"20179","_id":"39545","language":[{"iso":"eng"}],"page":"17","intvolume":"      1416","date_updated":"2023-03-22T10:19:13Z","author":[{"last_name":"Assion","first_name":"F","full_name":"Assion, F"},{"full_name":"Wolff, K","first_name":"K","last_name":"Wolff"},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"}],"title":"Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate","year":"2010","status":"public","department":[{"_id":"34"},{"_id":"59"}],"type":"conference","date_created":"2023-01-24T12:09:19Z","citation":{"apa":"Assion, F., Wolff, K., &#38; Hilleringmann, U. (2010). Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate. <i>Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain</i>, <i>1416</i>, 17.","ieee":"F. Assion, K. Wolff, and U. Hilleringmann, “Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate,” in <i>Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain</i>, 2010, vol. 1416, p. 17.","chicago":"Assion, F, K Wolff, and Ulrich Hilleringmann. “Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate.” In <i>Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain</i>, 1416:17, 2010.","short":"F. Assion, K. Wolff, U. Hilleringmann, in: Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain, 2010, p. 17.","mla":"Assion, F., et al. “Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate.” <i>Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain</i>, vol. 1416, 2010, p. 17.","ama":"Assion F, Wolff K, Hilleringmann U. Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate. In: <i>Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain</i>. Vol 1416. ; 2010:17.","bibtex":"@inproceedings{Assion_Wolff_Hilleringmann_2010, title={Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate}, volume={1416}, booktitle={Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain}, author={Assion, F and Wolff, K and Hilleringmann, Ulrich}, year={2010}, pages={17} }"},"publication":"Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain"},{"date_created":"2023-01-24T12:08:49Z","department":[{"_id":"59"}],"type":"journal_article","citation":{"chicago":"Wiegand, C, C Hangmann, C Hedayat, and Ulrich Hilleringmann. “A Resonance PLL-Based Tracking System for Capacitive Sensors-MEMS/NEMS.” <i>Smart System Integration SSI 2010</i>, 2010.","ama":"Wiegand C, Hangmann C, Hedayat C, Hilleringmann U. A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS. <i>Smart System Integration SSI 2010</i>. Published online 2010.","short":"C. Wiegand, C. Hangmann, C. Hedayat, U. Hilleringmann, Smart System Integration SSI 2010 (2010).","bibtex":"@article{Wiegand_Hangmann_Hedayat_Hilleringmann_2010, title={A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS}, journal={Smart System Integration SSI 2010}, author={Wiegand, C and Hangmann, C and Hedayat, C and Hilleringmann, Ulrich}, year={2010} }","mla":"Wiegand, C., et al. “A Resonance PLL-Based Tracking System for Capacitive Sensors-MEMS/NEMS.” <i>Smart System Integration SSI 2010</i>, 2010.","apa":"Wiegand, C., Hangmann, C., Hedayat, C., &#38; Hilleringmann, U. (2010). A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS. <i>Smart System Integration SSI 2010</i>.","ieee":"C. Wiegand, C. Hangmann, C. Hedayat, and U. Hilleringmann, “A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS,” <i>Smart System Integration SSI 2010</i>, 2010."},"publication":"Smart System Integration SSI 2010","language":[{"iso":"eng"}],"_id":"39544","user_id":"20179","author":[{"last_name":"Wiegand","first_name":"C","full_name":"Wiegand, C"},{"full_name":"Hangmann, C","first_name":"C","last_name":"Hangmann"},{"last_name":"Hedayat","first_name":"C","full_name":"Hedayat, C"},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"}],"status":"public","year":"2010","title":"A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS","date_updated":"2023-03-22T10:18:56Z"}]