[{"conference":{"location":"Kirkkonummi, Helsinki, Finnland","name":"Future Visions for Learning and Teaching"},"author":[{"first_name":"Tobias","orcid":" https://orcid.org/0000-0001-9262-5646","last_name":"Jenert","full_name":"Jenert, Tobias","id":"71994"},{"full_name":"Gebhardt, Anja","last_name":"Gebhardt","first_name":"Anja"}],"year":"2010","title":"Learning Cultures at Higher Education Institutions: Outlining a wohle-institution approach to teaching and learning","status":"public","date_updated":"2022-01-06T07:01:06Z","_id":"4493","user_id":"51057","citation":{"mla":"Jenert, Tobias, and Anja Gebhardt. <i>Learning Cultures at Higher Education Institutions: Outlining a Wohle-Institution Approach to Teaching and Learning</i>. 2010.","apa":"Jenert, T., &#38; Gebhardt, A. (2010). Learning Cultures at Higher Education Institutions: Outlining a wohle-institution approach to teaching and learning. Presented at the Future Visions for Learning and Teaching, Kirkkonummi, Helsinki, Finnland.","ieee":"T. Jenert and A. Gebhardt, “Learning Cultures at Higher Education Institutions: Outlining a wohle-institution approach to teaching and learning,” presented at the Future Visions for Learning and Teaching, Kirkkonummi, Helsinki, Finnland, 2010.","short":"T. Jenert, A. Gebhardt, in: 2010.","ama":"Jenert T, Gebhardt A. Learning Cultures at Higher Education Institutions: Outlining a wohle-institution approach to teaching and learning. In: ; 2010.","chicago":"Jenert, Tobias, and Anja Gebhardt. “Learning Cultures at Higher Education Institutions: Outlining a Wohle-Institution Approach to Teaching and Learning,” 2010.","bibtex":"@inproceedings{Jenert_Gebhardt_2010, title={Learning Cultures at Higher Education Institutions: Outlining a wohle-institution approach to teaching and learning}, author={Jenert, Tobias and Gebhardt, Anja}, year={2010} }"},"extern":"1","date_created":"2018-09-19T09:05:13Z","department":[{"_id":"208"},{"_id":"282"}],"type":"conference","keyword":["earning culture","Lernkultur","whole-institution approach","higher education","Hochschule"]},{"place":"Innsbruck","date_created":"2018-09-20T08:42:53Z","type":"book_chapter","department":[{"_id":"208"},{"_id":"282"}],"publication":"Beyond Knowledge Management","citation":{"chicago":"Jenert, Tobias. “Cultural Explorations: How Socio-Material Contexts Influence Knowledge Interaction.” In <i>Beyond Knowledge Management</i>, 117–37. Innsbruck: Innsbruck University Press, 2010.","short":"T. Jenert, in: Beyond Knowledge Management, Innsbruck University Press, Innsbruck, 2010, pp. 117–137.","apa":"Jenert, T. (2010). Cultural Explorations: How Socio-material Contexts Influence Knowledge Interaction. In <i>Beyond Knowledge Management</i> (pp. 117–137). Innsbruck: Innsbruck University Press.","ieee":"T. Jenert, “Cultural Explorations: How Socio-material Contexts Influence Knowledge Interaction,” in <i>Beyond Knowledge Management</i>, Innsbruck: Innsbruck University Press, 2010, pp. 117–137.","ama":"Jenert T. Cultural Explorations: How Socio-material Contexts Influence Knowledge Interaction. In: <i>Beyond Knowledge Management</i>. Innsbruck: Innsbruck University Press; 2010:117-137.","bibtex":"@inbook{Jenert_2010, place={Innsbruck}, title={Cultural Explorations: How Socio-material Contexts Influence Knowledge Interaction}, booktitle={Beyond Knowledge Management}, publisher={Innsbruck University Press}, author={Jenert, Tobias}, year={2010}, pages={117–137} }","mla":"Jenert, Tobias. “Cultural Explorations: How Socio-Material Contexts Influence Knowledge Interaction.” <i>Beyond Knowledge Management</i>, Innsbruck University Press, 2010, pp. 117–37."},"extern":"1","page":"117 - 137","_id":"4525","publisher":"Innsbruck University Press","user_id":"51057","year":"2010","status":"public","title":"Cultural Explorations: How Socio-material Contexts Influence Knowledge Interaction","author":[{"last_name":"Jenert","first_name":"Tobias","orcid":" https://orcid.org/0000-0001-9262-5646","full_name":"Jenert, Tobias","id":"71994"}],"date_updated":"2022-01-06T07:01:08Z"},{"title":"Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]","year":"2010","author":[{"first_name":"Sonja","last_name":"Herres-Pawlis","full_name":"Herres-Pawlis, Sonja"},{"id":"53","first_name":"Gerhard","last_name":"Berth","full_name":"Berth, Gerhard"},{"full_name":"Wiedemeier, Volker","first_name":"Volker","last_name":"Wiedemeier"},{"full_name":"Schmidt, Ludger","first_name":"Ludger","last_name":"Schmidt"},{"full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","first_name":"Artur","id":"606"},{"full_name":"Warnecke, Hans-Joachim","first_name":"Hans-Joachim","last_name":"Warnecke"}],"publication_identifier":{"issn":["0022-2313"]},"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"       130","language":[{"iso":"eng"}],"doi":"10.1016/j.jlumin.2010.05.012","issue":"10","publication":"Journal of Luminescence","abstract":[{"text":"A fluorescence study of acetonitrile solutions of bis(tetramethylguanidine)propane, copper(I)-iodide and [Cu(btmgp)I] was performed and the chemical reaction of the latter species with O2 was investigated at room temperature. The actual quenching process via O2 gassing was studied and an exponential dependence of the fluorescence intensity with respect to the complex concentration was observed.\r\nFurthermore the survey was deepened on time resolved fluorescence properties of solved [Cu(btmgp)I] in a wider concentration range. The applicability of this complex for O2 sensing inside a microreactor system was proven by confocal fluorescence measurements. It was shown that the investigated system can be used for oxygen sensing in the copper concentration range from 10−2 to 10−9 mol/l.","lang":"eng"}],"date_created":"2018-09-20T12:31:16Z","keyword":["Copper Oxygen Fluorescence quenching N donor ligands"],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"status":"public","page":"1958-1962","_id":"4548","publisher":"Elsevier BV","user_id":"49428","volume":130,"citation":{"ama":"Herres-Pawlis S, Berth G, Wiedemeier V, Schmidt L, Zrenner A, Warnecke H-J. Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. <i>Journal of Luminescence</i>. 2010;130(10):1958-1962. doi:<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>","short":"S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, H.-J. Warnecke, Journal of Luminescence 130 (2010) 1958–1962.","chicago":"Herres-Pawlis, Sonja, Gerhard Berth, Volker Wiedemeier, Ludger Schmidt, Artur Zrenner, and Hans-Joachim Warnecke. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].” <i>Journal of Luminescence</i> 130, no. 10 (2010): 1958–62. <a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">https://doi.org/10.1016/j.jlumin.2010.05.012</a>.","bibtex":"@article{Herres-Pawlis_Berth_Wiedemeier_Schmidt_Zrenner_Warnecke_2010, title={Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]}, volume={130}, DOI={<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>}, number={10}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Herres-Pawlis, Sonja and Berth, Gerhard and Wiedemeier, Volker and Schmidt, Ludger and Zrenner, Artur and Warnecke, Hans-Joachim}, year={2010}, pages={1958–1962} }","mla":"Herres-Pawlis, Sonja, et al. “Oxygen Sensing by Fluorescence Quenching of [Cu(Btmgp)I].” <i>Journal of Luminescence</i>, vol. 130, no. 10, Elsevier BV, 2010, pp. 1958–62, doi:<a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">10.1016/j.jlumin.2010.05.012</a>.","apa":"Herres-Pawlis, S., Berth, G., Wiedemeier, V., Schmidt, L., Zrenner, A., &#38; Warnecke, H.-J. (2010). Oxygen sensing by fluorescence quenching of [Cu(btmgp)I]. <i>Journal of Luminescence</i>, <i>130</i>(10), 1958–1962. <a href=\"https://doi.org/10.1016/j.jlumin.2010.05.012\">https://doi.org/10.1016/j.jlumin.2010.05.012</a>","ieee":"S. Herres-Pawlis, G. Berth, V. Wiedemeier, L. Schmidt, A. Zrenner, and H.-J. Warnecke, “Oxygen sensing by fluorescence quenching of [Cu(btmgp)I],” <i>Journal of Luminescence</i>, vol. 130, no. 10, pp. 1958–1962, 2010."}},{"publication_identifier":{"issn":["0268-1242","1361-6641"]},"author":[{"full_name":"Larramendi, E M","last_name":"Larramendi","first_name":"E M"},{"full_name":"Berth, Gerhard","last_name":"Berth","first_name":"Gerhard","id":"53"},{"last_name":"Wiedemeier","first_name":"V","full_name":"Wiedemeier, V"},{"full_name":"Hüsch, K-P","first_name":"K-P","last_name":"Hüsch"},{"last_name":"Zrenner","first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","id":"606"},{"last_name":"Woggon","first_name":"U","full_name":"Woggon, U"},{"first_name":"E","last_name":"Tschumak","full_name":"Tschumak, E"},{"first_name":"K","last_name":"Lischka","full_name":"Lischka, K"},{"last_name":"Schikora","first_name":"D","full_name":"Schikora, D"}],"title":"Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers","year":"2010","intvolume":"        25","article_type":"original","date_updated":"2022-01-06T07:01:09Z","publication_status":"published","language":[{"iso":"eng"}],"article_number":"075003","doi":"10.1088/0268-1242/25/7/075003","publication":"Semiconductor Science and Technology","issue":"7","abstract":[{"text":"Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point.","lang":"eng"}],"date_created":"2018-09-20T12:35:35Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"type":"journal_article","status":"public","publisher":"IOP Publishing","_id":"4549","volume":25,"user_id":"49428","citation":{"ieee":"E. M. Larramendi <i>et al.</i>, “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 2010.","apa":"Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>, <i>25</i>(7). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>","short":"E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).","chicago":"Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner, U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i> 25, no. 7 (2010). <a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">https://doi.org/10.1088/0268-1242/25/7/075003</a>.","mla":"Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i>, vol. 25, no. 7, 075003, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>.","bibtex":"@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010, title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}, volume={25}, DOI={<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>}, number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}, year={2010} }","ama":"Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>. 2010;25(7). doi:<a href=\"https://doi.org/10.1088/0268-1242/25/7/075003\">10.1088/0268-1242/25/7/075003</a>"}},{"_id":"4550","publisher":"AIP Publishing","user_id":"20798","volume":97,"status":"public","citation":{"chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>."},"article_number":"143101","language":[{"iso":"eng"}],"doi":"10.1063/1.3488812","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","year":"2010","author":[{"full_name":"Mehta, M.","last_name":"Mehta","first_name":"M."},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"S.","last_name":"Michaelis de Vasconcellos","full_name":"Michaelis de Vasconcellos, S."},{"last_name":"Zrenner","orcid":"0000-0002-5190-0944","first_name":"Artur","full_name":"Zrenner, Artur","id":"606"},{"id":"20798","full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"date_updated":"2022-01-06T07:01:09Z","publication_status":"published","intvolume":"        97","article_type":"original","date_created":"2018-09-20T12:38:51Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"issue":"14","publication":"Applied Physics Letters","abstract":[{"text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.","lang":"eng"}]},{"publication_identifier":{"issn":["1386-9477"]},"author":[{"first_name":"Minisha","last_name":"Mehta","full_name":"Mehta, Minisha"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Melnikov, Alexander","first_name":"Alexander","last_name":"Melnikov"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."},{"last_name":"Michaelis de Vasconcellos","first_name":"Steffen","full_name":"Michaelis de Vasconcellos, Steffen"},{"last_name":"Baumgarten","first_name":"Tim","full_name":"Baumgarten, Tim"},{"full_name":"Zrenner, Artur","last_name":"Zrenner","first_name":"Artur","orcid":"0000-0002-5190-0944","id":"606"},{"full_name":"Meier, Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","id":"20798"}],"year":"2010","title":"Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode","article_type":"original","intvolume":"        42","publication_status":"published","date_updated":"2022-01-06T07:01:09Z","language":[{"iso":"eng"}],"doi":"10.1016/j.physe.2009.12.053","issue":"10","publication":"Physica E: Low-dimensional Systems and Nanostructures","abstract":[{"text":"An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.","lang":"eng"}],"date_created":"2018-09-20T12:42:40Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"type":"journal_article","keyword":["Molecular beam epitaxy","Focused ion beam","Self-assembled quantum dot","Electroluminescence"],"status":"public","publisher":"Elsevier BV","_id":"4551","page":"2749-2752","volume":42,"user_id":"20798","citation":{"apa":"Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., Michaelis de Vasconcellos, S., Baumgarten, T., … Meier, C. (2010). Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>42</i>(10), 2749–2752. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>","ieee":"M. Mehta <i>et al.</i>, “Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 42, no. 10, pp. 2749–2752, 2010.","chicago":"Mehta, Minisha, Dirk Reuter, Alexander Melnikov, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Tim Baumgarten, Artur Zrenner, and Cedrik Meier. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 42, no. 10 (2010): 2749–52. <a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">https://doi.org/10.1016/j.physe.2009.12.053</a>.","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, S. Michaelis de Vasconcellos, T. Baumgarten, A. Zrenner, C. Meier, Physica E: Low-Dimensional Systems and Nanostructures 42 (2010) 2749–2752.","mla":"Mehta, Minisha, et al. “Intentionally Positioned Self-Assembled InAs Quantum Dots in an Electroluminescent p–i–n Junction Diode.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2749–52, doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>.","ama":"Mehta M, Reuter D, Melnikov A, et al. Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2010;42(10):2749-2752. doi:<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Michaelis de Vasconcellos_Baumgarten_Zrenner_Meier_2010, title={Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2009.12.053\">10.1016/j.physe.2009.12.053</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}, year={2010}, pages={2749–2752} }"}},{"publication_identifier":{"issn":["1386-9477"]},"author":[{"last_name":"Panfilova","first_name":"M.","full_name":"Panfilova, M."},{"full_name":"Michaelis de Vasconcellos, S.","last_name":"Michaelis de Vasconcellos","first_name":"S."},{"first_name":"A.","last_name":"Pawlis","full_name":"Pawlis, A."},{"last_name":"Lischka","first_name":"K.","full_name":"Lischka, K."},{"full_name":"Zrenner, Artur","first_name":"Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","id":"606"}],"year":"2010","title":"Resonant photocurrent-spectroscopy of individual CdSe quantum dots","intvolume":"        42","article_type":"original","date_updated":"2022-01-06T07:01:09Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1016/j.physe.2010.01.013","publication":"Physica E: Low-dimensional Systems and Nanostructures","issue":"10","abstract":[{"lang":"eng","text":"Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm."}],"date_created":"2018-09-20T12:45:46Z","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"keyword":["CdSe/ZnSe quantum dots","Photodiode","Quantum confined Stark Effect","Photocurrent","II–VI Semiconductors"],"type":"journal_article","status":"public","publisher":"Elsevier BV","_id":"4552","page":"2521-2523","volume":42,"user_id":"49428","citation":{"mla":"Panfilova, M., et al. “Resonant Photocurrent-Spectroscopy of Individual CdSe Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 42, no. 10, Elsevier BV, 2010, pp. 2521–23, doi:<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>.","bibtex":"@article{Panfilova_Michaelis de Vasconcellos_Pawlis_Lischka_Zrenner_2010, title={Resonant photocurrent-spectroscopy of individual CdSe quantum dots}, volume={42}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2010.01.013\">10.1016/j.physe.2010.01.013</a>}, number={10}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Panfilova, M. and Michaelis de Vasconcellos, S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}, year={2010}, pages={2521–2523} }","ama":"Panfilova M, Michaelis de Vasconcellos S, Pawlis A, Lischka K, Zrenner A. 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