[{"doi":"10.1103/physrevb.82.094110","language":[{"iso":"eng"}],"article_number":"094110","article_type":"original","intvolume":"        82","publication_status":"published","date_updated":"2022-01-06T07:00:35Z","publication_identifier":{"issn":["1098-0121","1550-235X"]},"author":[{"full_name":"Zirkelbach, F.","first_name":"F.","last_name":"Zirkelbach"},{"full_name":"Stritzker, B.","last_name":"Stritzker","first_name":"B."},{"full_name":"Nordlund, K.","first_name":"K.","last_name":"Nordlund"},{"full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg","id":"20797"},{"last_name":"Schmidt","first_name":"W. G.","full_name":"Schmidt, W. G."},{"full_name":"Rauls, E.","first_name":"E.","last_name":"Rauls"}],"title":"Defects in carbon implanted silicon calculated by classical potentials and first-principles methods","year":"2010","department":[{"_id":"15"},{"_id":"286"}],"type":"journal_article","date_created":"2018-08-28T12:30:15Z","file":[{"date_created":"2018-08-28T12:31:01Z","creator":"hclaudia","file_id":"4205","success":1,"content_type":"application/pdf","relation":"main_file","date_updated":"2018-08-28T12:31:01Z","file_name":"Defects in Carbon implanted Silicon calculated by classical potentials and first principles methods.pdf","file_size":238023,"access_level":"closed"}],"abstract":[{"text":"A comparative theoretical investigation of carbon interstitials in silicon is presented. Calculations using\r\nclassical potentials are compared to first-principles density-functional theory calculations of the geometries,\r\nformation, and activation energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription of this system. In contrast to previous studies, the present first-principles calculations of\r\nthe interstitial carbon migration path yield an activation energy that excellently matches the experiment. The\r\nbond-centered interstitial configuration shows a net magnetization of two electrons, illustrating the need for\r\nspin-polarized calculations.","lang":"eng"}],"publication":"Physical Review B","issue":"9","volume":82,"user_id":"55706","ddc":["530"],"publisher":"American Physical Society (APS)","_id":"4204","has_accepted_license":"1","status":"public","citation":{"short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i> 82, no. 9 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>.","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>, <i>82</i>(9). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” <i>Physical Review B</i>, vol. 82, no. 9, 2010.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>. 2010;82(9). doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>}, number={9094110}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }","mla":"Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i>, vol. 82, no. 9, 094110, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>."},"file_date_updated":"2018-08-28T12:31:01Z"},{"citation":{"apa":"Lindner, J. (2010). Advanced topics and applications of Transmission Electron Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain).","ieee":"J. Lindner, “Advanced topics and applications of Transmission Electron Microscopy, Part I-II,” presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain), 2010.","chicago":"Lindner, Jörg. “Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II,” 2010.","short":"J. Lindner, in: 2010.","mla":"Lindner, Jörg. <i>Advanced Topics and Applications of Transmission Electron Microscopy, Part I-II</i>. 2010.","ama":"Lindner J. Advanced topics and applications of Transmission Electron Microscopy, Part I-II. In: ; 2010.","bibtex":"@inproceedings{Lindner_2010, title={Advanced topics and applications of Transmission Electron Microscopy, Part I-II}, author={Lindner, Jörg}, year={2010} }"},"type":"conference_abstract","department":[{"_id":"15"},{"_id":"286"}],"date_created":"2018-08-28T12:34:11Z","date_updated":"2022-01-06T07:00:35Z","status":"public","title":"Advanced topics and applications of Transmission Electron Microscopy, Part I-II","year":"2010","author":[{"id":"20797","full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg"}],"conference":{"start_date":"2010-04-14","name":"Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias ","location":"Universidad Autónoma de Madrid (Spain)","end_date":"2010-04-16"},"user_id":"55706","_id":"4206"},{"conference":{"name":"MRS Spring Meeting 2009","location":"San Francisco (USA)"},"publication_identifier":{"isbn":["978-1-60511-154-4"]},"status":"public","title":"Ion Beams and Nano-Engineering","year":"2010","intvolume":"      1181","date_updated":"2022-01-06T07:00:35Z","publication_status":"published","_id":"4207","publisher":"MRS Symposium Proceedings ","language":[{"iso":"eng"}],"editor":[{"full_name":"Ila, D.","last_name":"Ila","first_name":"D."},{"last_name":"Kishimoto","first_name":"N. ","full_name":"Kishimoto, N. "},{"full_name":"Lindner, Jörg","last_name":"Lindner","first_name":"Jörg","id":"20797"},{"full_name":"Baglin, J.","last_name":"Baglin","first_name":"J."}],"volume":1181,"user_id":"55706","citation":{"ieee":"D. Ila, N. Kishimoto, J. Lindner, and J. Baglin, Eds., <i>Ion Beams and Nano-Engineering</i>, vol. 1181. MRS Symposium Proceedings , 2010.","apa":"Ila, D., Kishimoto, N., Lindner, J., &#38; Baglin, J. (Eds.). (2010). <i>Ion Beams and Nano-Engineering</i> (Vol. 1181). Presented at the MRS Spring Meeting 2009, San Francisco (USA): MRS Symposium Proceedings .","mla":"Ila, D., et al., editors. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181, MRS Symposium Proceedings , 2010.","bibtex":"@book{Ila_Kishimoto_Lindner_Baglin_2010, title={Ion Beams and Nano-Engineering}, volume={1181}, publisher={MRS Symposium Proceedings }, year={2010} }","chicago":"Ila, D., N.  Kishimoto, Jörg Lindner, and J. Baglin, eds. <i>Ion Beams and Nano-Engineering</i>. Vol. 1181. MRS Symposium Proceedings , 2010.","short":"D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.","ama":"Ila D, Kishimoto N, Lindner J, Baglin J, eds. <i>Ion Beams and Nano-Engineering</i>. Vol 1181. MRS Symposium Proceedings ; 2010."},"date_created":"2018-08-28T12:38:16Z","department":[{"_id":"15"},{"_id":"286"}],"type":"book_editor"},{"citation":{"mla":"Häberlen, M., et al. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” <i>Journal of Physics: Conference Series</i>, vol. 209, 012017, IOP Publishing, 2010, doi:<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>.","bibtex":"@article{Häberlen_Zhu_McAleese_Kappers_Humphreys_2010, title={Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers}, volume={209}, DOI={<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>}, number={012017}, journal={Journal of Physics: Conference Series}, publisher={IOP Publishing}, author={Häberlen, M and Zhu, D and McAleese, C and Kappers, M J and Humphreys, C J}, year={2010} }","ama":"Häberlen M, Zhu D, McAleese C, Kappers MJ, Humphreys CJ. Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. <i>Journal of Physics: Conference Series</i>. 2010;209. doi:<a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">10.1088/1742-6596/209/1/012017</a>","ieee":"M. Häberlen, D. Zhu, C. McAleese, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers,” <i>Journal of Physics: Conference Series</i>, vol. 209, 2010.","apa":"Häberlen, M., Zhu, D., McAleese, C., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers. <i>Journal of Physics: Conference Series</i>, <i>209</i>. <a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">https://doi.org/10.1088/1742-6596/209/1/012017</a>","short":"M. Häberlen, D. Zhu, C. McAleese, M.J. Kappers, C.J. Humphreys, Journal of Physics: Conference Series 209 (2010).","chicago":"Häberlen, M, D Zhu, C McAleese, M J Kappers, and C J Humphreys. “Dislocation Reduction in MOVPE Grown GaN Layers on (111)Si Using SiNxand AlGaN Layers.” <i>Journal of Physics: Conference Series</i> 209 (2010). <a href=\"https://doi.org/10.1088/1742-6596/209/1/012017\">https://doi.org/10.1088/1742-6596/209/1/012017</a>."},"file_date_updated":"2018-08-28T12:40:20Z","has_accepted_license":"1","status":"public","volume":209,"ddc":["530"],"user_id":"55706","publisher":"IOP Publishing","_id":"4208","abstract":[{"lang":"eng","text":"Growth of GaN on Si(111) potentially enables cost efficient manufacturing of optoelectronic devices due to the possibility of using cheap large area substrates. However, GaN layers grown on Si(111) substrates suffer from high tensile stress that can lead to cracking at layer thicknesses exceeding 1 μm. Another challenge is the high dislocation density of GaN layers grown on Si(111) which is detrimental to device performance. In this paper we show that a step graded AlGaN buffer layer can compensate tensile stress, avoiding cracking, and at the same time reduce the dislocation density. An additional SiNx interlayer in the GaN layer is shown to further reduce the dislocation density down to the high 108 /cm². Weak beam dark field TEM was used to study the dislocation reduction in cross sectional samples and for comparison of the step graded AlGaN buffer layer structure to a continuously graded one. STEM ADF was used to determine the exact location of dislocation bending with respect to the position of the interface."}],"publication":"Journal of Physics: Conference Series","department":[{"_id":"15"}],"type":"journal_article","date_created":"2018-08-28T12:39:31Z","file":[{"access_level":"closed","file_size":13011359,"file_name":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers.pdf","date_updated":"2018-08-28T12:40:20Z","relation":"main_file","success":1,"content_type":"application/pdf","file_id":"4209","creator":"hclaudia","date_created":"2018-08-28T12:40:20Z"}],"intvolume":"       209","article_type":"original","date_updated":"2022-01-06T07:00:36Z","publication_status":"published","author":[{"first_name":"M","last_name":"Häberlen","full_name":"Häberlen, M"},{"first_name":"D","last_name":"Zhu","full_name":"Zhu, D"},{"full_name":"McAleese, C","first_name":"C","last_name":"McAleese"},{"first_name":"M J","last_name":"Kappers","full_name":"Kappers, M J"},{"last_name":"Humphreys","first_name":"C J","full_name":"Humphreys, C J"}],"publication_identifier":{"issn":["1742-6596"]},"title":"Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers","year":"2010","doi":"10.1088/1742-6596/209/1/012017","language":[{"iso":"eng"}],"article_number":"012017"},{"volume":247,"user_id":"55706","ddc":["530"],"publisher":"Wiley","_id":"4210","page":"1753-1756","has_accepted_license":"1","status":"public","citation":{"mla":"Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i>, vol. 247, no. 7, Wiley, 2010, pp. 1753–56, doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>.","ama":"Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>physica status solidi (b)</i>. 2010;247(7):1753-1756. doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>","bibtex":"@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }","apa":"Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>Physica Status Solidi (B)</i>, <i>247</i>(7), 1753–1756. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>","ieee":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1753–1756, 2010.","chicago":"Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i> 247, no. 7 (2010): 1753–56. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>.","short":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756."},"file_date_updated":"2018-08-28T12:43:31Z","doi":"10.1002/pssb.200983537","language":[{"iso":"eng"}],"article_type":"original","intvolume":"       247","publication_status":"published","date_updated":"2022-01-06T07:00:36Z","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"full_name":"Häberlen, Maik","first_name":"Maik","last_name":"Häberlen"},{"full_name":"Zhu, Dandan","first_name":"Dandan","last_name":"Zhu"},{"full_name":"McAleese, Clifford","first_name":"Clifford","last_name":"McAleese"},{"last_name":"Zhu","first_name":"Tongtong","full_name":"Zhu, Tongtong"},{"last_name":"Kappers","first_name":"Menno J.","full_name":"Kappers, Menno J."},{"last_name":"Humphreys","first_name":"Colin J.","full_name":"Humphreys, Colin J."}],"year":"2010","title":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer","department":[{"_id":"15"}],"type":"journal_article","date_created":"2018-08-28T12:42:58Z","file":[{"content_type":"application/pdf","success":1,"file_id":"4211","date_updated":"2018-08-28T12:43:31Z","relation":"main_file","access_level":"closed","file_size":911931,"file_name":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf","date_created":"2018-08-28T12:43:31Z","creator":"hclaudia"}],"abstract":[{"text":"In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties.","lang":"eng"}],"issue":"7","publication":"physica status solidi (b)"},{"author":[{"last_name":"Häberlen","first_name":"M.","full_name":"Häberlen, M."},{"full_name":"Badcock, T. J.","last_name":"Badcock","first_name":"T. J."},{"last_name":"Moram","first_name":"M. A.","full_name":"Moram, M. A."},{"last_name":"Hollander","first_name":"J. L.","full_name":"Hollander, J. L."},{"full_name":"Kappers, M. J.","first_name":"M. J.","last_name":"Kappers"},{"first_name":"P.","last_name":"Dawson","full_name":"Dawson, P."},{"full_name":"Humphreys, C. J.","last_name":"Humphreys","first_name":"C. J."},{"full_name":"Oliver, R. A.","last_name":"Oliver","first_name":"R. A."}],"publication_identifier":{"issn":["0021-8979","1089-7550"]},"title":"Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth","year":"2010","intvolume":"       108","article_type":"original","date_updated":"2022-01-06T07:00:37Z","publication_status":"published","language":[{"iso":"eng"}],"article_number":"033523","doi":"10.1063/1.3460641","publication":"Journal of Applied Physics","issue":"3","abstract":[{"lang":"eng","text":"Low temperature cathodo- and photoluminescence has been performed on nonpolar a-plane GaN films grown using epitaxial lateral overgrowth. In films overgrown at a low V–III ratio, the emission spectrum is dominated by “yellow” and “blue” luminescence bands, attributed to recombination at point defects or impurities. The intensity of this emission is observed to decrease steadily across the window region along the −c direction, possibly due to asymmetric diffusion of a point defect/impurity species. When overgrown at a higher V–III ratio, the near band edge and basal-plane stacking fault emission intensity increases by orders of magnitude and a donor–acceptor pair band is observed. Using monochromatic cathodoluminescence imaging, the various emission features are correlated with the microstructure of the film. In particular, the peak energy of the basal-plane stacking fault emission is seen to be blueshifted by \u000415 meV in the wing relative to the window region, which may be related to the different strain states in the respective regions."}],"date_created":"2018-08-28T12:46:49Z","file":[{"creator":"hclaudia","date_created":"2018-08-28T12:47:23Z","relation":"main_file","date_updated":"2018-08-28T12:47:23Z","file_name":"Low temperature photoluminescence and cathodoluminescence studies of non-polar GaN grown using epitaxial lateral overgrowth.pdf","file_size":2391054,"access_level":"closed","file_id":"4213","content_type":"application/pdf","success":1}],"department":[{"_id":"15"}],"type":"journal_article","status":"public","has_accepted_license":"1","publisher":"AIP Publishing","_id":"4212","volume":108,"ddc":["530"],"user_id":"55706","citation":{"mla":"Häberlen, M., et al. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” <i>Journal of Applied Physics</i>, vol. 108, no. 3, 033523, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>.","apa":"Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., … Oliver, R. A. (2010). Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. <i>Journal of Applied Physics</i>, <i>108</i>(3). <a href=\"https://doi.org/10.1063/1.3460641\">https://doi.org/10.1063/1.3460641</a>","ieee":"M. Häberlen <i>et al.</i>, “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” <i>Journal of Applied Physics</i>, vol. 108, no. 3, 2010.","chicago":"Häberlen, M., T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver. “Low Temperature Photoluminescence and Cathodoluminescence Studies of Nonpolar GaN Grown Using Epitaxial Lateral Overgrowth.” <i>Journal of Applied Physics</i> 108, no. 3 (2010). <a href=\"https://doi.org/10.1063/1.3460641\">https://doi.org/10.1063/1.3460641</a>.","ama":"Häberlen M, Badcock TJ, Moram MA, et al. Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth. <i>Journal of Applied Physics</i>. 2010;108(3). doi:<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>","short":"M. Häberlen, T.J. Badcock, M.A. Moram, J.L. Hollander, M.J. Kappers, P. Dawson, C.J. Humphreys, R.A. Oliver, Journal of Applied Physics 108 (2010).","bibtex":"@article{Häberlen_Badcock_Moram_Hollander_Kappers_Dawson_Humphreys_Oliver_2010, title={Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth}, volume={108}, DOI={<a href=\"https://doi.org/10.1063/1.3460641\">10.1063/1.3460641</a>}, number={3033523}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Häberlen, M. and Badcock, T. J. and Moram, M. A. and Hollander, J. L. and Kappers, M. J. and Dawson, P. and Humphreys, C. J. and Oliver, R. A.}, year={2010} }"},"file_date_updated":"2018-08-28T12:47:23Z"},{"file_date_updated":"2018-08-28T12:50:07Z","citation":{"short":"R. Hao, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, M.A. Moram, Journal of Crystal Growth 312 (2010) 3536–3543.","chicago":"Hao, Rui, T. Zhu, M. Häberlen, T.Y. Chang, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and M.A. Moram. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” <i>Journal of Crystal Growth</i> 312, no. 23 (2010): 3536–43. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>.","apa":"Hao, R., Zhu, T., Häberlen, M., Chang, T. Y., Kappers, M. J., Oliver, R. A., … Moram, M. A. (2010). The effects of annealing on non-polar (112¯0) a-plane GaN films. <i>Journal of Crystal Growth</i>, <i>312</i>(23), 3536–3543. <a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">https://doi.org/10.1016/j.jcrysgro.2010.08.041</a>","ieee":"R. Hao <i>et al.</i>, “The effects of annealing on non-polar (112¯0) a-plane GaN films,” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, pp. 3536–3543, 2010.","ama":"Hao R, Zhu T, Häberlen M, et al. The effects of annealing on non-polar (112¯0) a-plane GaN films. <i>Journal of Crystal Growth</i>. 2010;312(23):3536-3543. doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>","bibtex":"@article{Hao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title={The effects of annealing on non-polar (112¯0) a-plane GaN films}, volume={312}, DOI={<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>}, number={23}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A.}, year={2010}, pages={3536–3543} }","mla":"Hao, Rui, et al. “The Effects of Annealing on Non-Polar (112¯0) a-Plane GaN Films.” <i>Journal of Crystal Growth</i>, vol. 312, no. 23, Elsevier BV, 2010, pp. 3536–43, doi:<a href=\"https://doi.org/10.1016/j.jcrysgro.2010.08.041\">10.1016/j.jcrysgro.2010.08.041</a>."},"page":"3536-3543","_id":"4214","publisher":"Elsevier BV","ddc":["530"],"user_id":"55706","volume":312,"status":"public","has_accepted_license":"1","file":[{"file_id":"4215","success":1,"content_type":"application/pdf","relation":"main_file","date_updated":"2018-08-28T12:50:07Z","file_name":"The effects of annealing on non-polar (11-20) a-plane GaN films.pdf","access_level":"closed","file_size":1218752,"date_created":"2018-08-28T12:50:07Z","creator":"hclaudia"}],"date_created":"2018-08-28T12:49:39Z","type":"journal_article","department":[{"_id":"15"}],"publication":"Journal of Crystal Growth","issue":"23","abstract":[{"text":"Non-polar a -plane (1 1 2 ̄ 0) GaN films were grown on r-plane sapphire by metal–organic vapor phase epitaxy and were subsequently annealed for 90 min at 1070°C. Most dislocations were partial\r\ndislocations, which terminated basal plane stacking faults. Prior to annealing, these dislocations were\r\nrandomly distributed. After annealing, these dislocations moved into arrays oriented along the [0 0 0 1]\r\ndirection and aligned perpendicular to the film–substrate interface throughout their length, although\r\nthe total dislocation density remained unchanged. These changes were accompanied by broadening of\r\nthe symmetric X-ray diffraction 1 1 2 ̄ 0 w-scan widths. The mechanism of movement was identified as\r\ndislocation glide, occurring due to highly anisotropic stresses (confirmed by X-ray diffraction lattice\r\nparameter measurements) and evidenced by macroscopic slip bands observed on the sample surface.\r\nThere was also an increase in the density of unintentionally n-type doped electrically conductive\r\ninclined features present at the film–substrate interface (as observed in cross-section using scanning\r\ncapacitance microscopy), suggesting out-diffusion of impurities from the substrate along with prismatic\r\nstacking faults. These data suggest that annealing processes performed close to film growth\r\ntemperatures can affect both the microstructure and the electrical properties of non-polar GaN films.","lang":"eng"}],"language":[{"iso":"eng"}],"doi":"10.1016/j.jcrysgro.2010.08.041","title":"The effects of annealing on non-polar (112¯0) a-plane GaN films","year":"2010","publication_identifier":{"issn":["0022-0248"]},"author":[{"first_name":"Rui","last_name":"Hao","full_name":"Hao, Rui"},{"first_name":"T.","last_name":"Zhu","full_name":"Zhu, T."},{"last_name":"Häberlen","first_name":"M.","full_name":"Häberlen, M."},{"first_name":"T.Y.","last_name":"Chang","full_name":"Chang, T.Y."},{"full_name":"Kappers, M.J.","first_name":"M.J.","last_name":"Kappers"},{"first_name":"R.A.","last_name":"Oliver","full_name":"Oliver, R.A."},{"first_name":"C.J.","last_name":"Humphreys","full_name":"Humphreys, C.J."},{"full_name":"Moram, M.A.","last_name":"Moram","first_name":"M.A."}],"date_updated":"2022-01-06T07:00:37Z","publication_status":"published","intvolume":"       312","article_type":"original"},{"status":"public","has_accepted_license":"1","page":"403-406","_id":"4216","publisher":"Trans Tech Publications","ddc":["530"],"user_id":"55706","volume":"645-648","file_date_updated":"2018-08-28T12:54:26Z","citation":{"short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 645–648 (2010) 403–406.","chicago":"Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i> 645–648 (2010): 403–6. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>.","apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., &#38; Gerstmann, U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>, <i>645</i>–<i>648</i>, 403–406. <a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">https://doi.org/10.4028/www.scientific.net/msf.645-648.403</a>","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” <i>Materials Science Forum</i>, vol. 645–648, pp. 403–406, 2010.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. <i>Materials Science Forum</i>. 2010;645-648:403-406. doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648}, DOI={<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>}, journal={Materials Science Forum}, publisher={Trans Tech Publications}, author={Scholle, Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2010}, pages={403–406} }","mla":"Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” <i>Materials Science Forum</i>, vol. 645–648, Trans Tech Publications, 2010, pp. 403–06, doi:<a href=\"https://doi.org/10.4028/www.scientific.net/msf.645-648.403\">10.4028/www.scientific.net/msf.645-648.403</a>."},"year":"2010","title":"Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC","author":[{"full_name":"Scholle, Andreas","last_name":"Scholle","first_name":"Andreas"},{"full_name":"Greulich-Weber, Siegmund","last_name":"Greulich-Weber","first_name":"Siegmund"},{"full_name":"Rauls, Eva","last_name":"Rauls","first_name":"Eva"},{"last_name":"Schmidt","first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero"},{"last_name":"Gerstmann","first_name":"Uwe","full_name":"Gerstmann, Uwe"}],"publication_identifier":{"issn":["1662-9752"]},"date_updated":"2022-01-06T07:00:38Z","publication_status":"published","article_type":"original","language":[{"iso":"eng"}],"doi":"10.4028/www.scientific.net/msf.645-648.403","publication":"Materials Science Forum","abstract":[{"lang":"eng","text":"In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new\r\nEPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652·10-4\r\ncm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit\r\ncontribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal\r\naxis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high\r\nzero-field splitting D can be qualitatively understood by the occurrence of additional close-lying\r\ndefect levels in defect clusters resulting in comparatively large second-order spin-orbit coupling. A\r\ntentative assignment to vacancy clusters is supported by the observed annealing behavior."}],"file":[{"success":1,"content_type":"application/pdf","file_id":"4217","file_size":583484,"access_level":"closed","file_name":"Fine structure of triplet centers in room temperature irradiated 6H-SiC.pdf","date_updated":"2018-08-28T12:54:26Z","relation":"main_file","date_created":"2018-08-28T12:54:26Z","creator":"hclaudia"}],"date_created":"2018-08-28T12:53:50Z","type":"journal_article","department":[{"_id":"15"}]},{"editor":[{"full_name":"Becker, Jörg","first_name":"Jörg","last_name":"Becker"},{"full_name":"Knackstedt, Ralf","last_name":"Knackstedt","first_name":"Ralf"},{"last_name":"Müller","first_name":"Oliver","full_name":"Müller, Oliver"},{"first_name":"Axel","last_name":"Winkelmann","full_name":"Winkelmann, Axel"}],"doi":"10.1007/978-3-642-11859-3_10","user_id":"21671","language":[{"iso":"eng"}],"_id":"5041","page":"161--174","date_updated":"2022-01-06T07:01:35Z","author":[{"full_name":"Becker, Jörg","last_name":"Becker","first_name":"Jörg"},{"full_name":"Beverungen, Daniel","first_name":"Daniel","last_name":"Beverungen","id":"59677"},{"full_name":"Knackstedt, Ralf","last_name":"Knackstedt","first_name":"Ralf"},{"id":"72849","first_name":"Oliver","last_name":"Müller","full_name":"Müller, Oliver"},{"full_name":"Müller, Steffen","last_name":"Müller","first_name":"Steffen"}],"publication_identifier":{"isbn":["978-3-642-11858-6"]},"year":"2010","title":"TCO-as-a-Service --- Servicebasierte Lebenszyklusrechnung für hybride Leistungsbündel","status":"public","department":[{"_id":"526"}],"type":"book_chapter","place":"Berlin, Heidelberg","date_created":"2018-10-30T13:43:51Z","extern":"1","citation":{"mla":"Becker, Jörg, et al. “TCO-as-a-Service --- Servicebasierte Lebenszyklusrechnung Für Hybride Leistungsbündel.” <i>Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung Und Internetisierung</i>, edited by Jörg Becker et al., 2010, pp. 161--174, doi:<a href=\"https://doi.org/10.1007/978-3-642-11859-3_10\">10.1007/978-3-642-11859-3_10</a>.","bibtex":"@inbook{Becker_Beverungen_Knackstedt_Müller_Müller_2010, place={Berlin, Heidelberg}, title={TCO-as-a-Service --- Servicebasierte Lebenszyklusrechnung für hybride Leistungsbündel}, DOI={<a href=\"https://doi.org/10.1007/978-3-642-11859-3_10\">10.1007/978-3-642-11859-3_10</a>}, booktitle={Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung und Internetisierung}, author={Becker, Jörg and Beverungen, Daniel and Knackstedt, Ralf and Müller, Oliver and Müller, Steffen}, editor={Becker, Jörg and Knackstedt, Ralf and Müller, Oliver and Winkelmann, AxelEditors}, year={2010}, pages={161--174} }","ama":"Becker J, Beverungen D, Knackstedt R, Müller O, Müller S. TCO-as-a-Service --- Servicebasierte Lebenszyklusrechnung für hybride Leistungsbündel. In: Becker J, Knackstedt R, Müller O, Winkelmann A, eds. <i>Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung Und Internetisierung</i>. Berlin, Heidelberg; 2010:161--174. doi:<a href=\"https://doi.org/10.1007/978-3-642-11859-3_10\">10.1007/978-3-642-11859-3_10</a>","ieee":"J. Becker, D. Beverungen, R. Knackstedt, O. Müller, and S. Müller, “TCO-as-a-Service --- Servicebasierte Lebenszyklusrechnung für hybride Leistungsbündel,” in <i>Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung und Internetisierung</i>, J. Becker, R. Knackstedt, O. Müller, and A. Winkelmann, Eds. Berlin, Heidelberg, 2010, pp. 161--174.","apa":"Becker, J., Beverungen, D., Knackstedt, R., Müller, O., &#38; Müller, S. (2010). TCO-as-a-Service --- Servicebasierte Lebenszyklusrechnung für hybride Leistungsbündel. In J. Becker, R. Knackstedt, O. Müller, &#38; A. Winkelmann (Eds.), <i>Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung und Internetisierung</i> (pp. 161--174). Berlin, Heidelberg. <a href=\"https://doi.org/10.1007/978-3-642-11859-3_10\">https://doi.org/10.1007/978-3-642-11859-3_10</a>","short":"J. Becker, D. Beverungen, R. Knackstedt, O. Müller, S. Müller, in: J. Becker, R. Knackstedt, O. Müller, A. Winkelmann (Eds.), Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung Und Internetisierung, Berlin, Heidelberg, 2010, pp. 161--174.","chicago":"Becker, Jörg, Daniel Beverungen, Ralf Knackstedt, Oliver Müller, and Steffen Müller. “TCO-as-a-Service --- Servicebasierte Lebenszyklusrechnung Für Hybride Leistungsbündel.” In <i>Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung Und Internetisierung</i>, edited by Jörg Becker, Ralf Knackstedt, Oliver Müller, and Axel Winkelmann, 161--174. Berlin, Heidelberg, 2010. <a href=\"https://doi.org/10.1007/978-3-642-11859-3_10\">https://doi.org/10.1007/978-3-642-11859-3_10</a>."},"publication":"Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung und Internetisierung"},{"page":"177--193","_id":"5059","doi":"10.1007/978-3-642-11859-3_11","user_id":"21671","editor":[{"last_name":"Becker","first_name":"Jörg","full_name":"Becker, Jörg"},{"full_name":"Knackstedt, Ralf","first_name":"Ralf","last_name":"Knackstedt"},{"last_name":"Müller","first_name":"Oliver","full_name":"Müller, Oliver"},{"first_name":"Axel","last_name":"Winkelmann","full_name":"Winkelmann, Axel"}],"status":"public","year":"2010","title":"E-Services im Handel --- Auffindung und Dokumentation von Potenzialen zur Digitalisierung von Dienstleistungen für Hersteller und Kunden","author":[{"id":"59677","full_name":"Beverungen, Daniel","first_name":"Daniel","last_name":"Beverungen"},{"last_name":"Knackstedt","first_name":"Ralf","full_name":"Knackstedt, Ralf"},{"full_name":"Winkelmann, Axel","first_name":"Axel","last_name":"Winkelmann"}],"publication_identifier":{"isbn":["978-3-642-11858-6"]},"date_updated":"2022-01-06T07:01:36Z","place":"Berlin, Heidelberg","date_created":"2018-10-30T14:14:52Z","type":"book_chapter","department":[{"_id":"526"}],"publication":"Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung und Internetisierung","citation":{"short":"D. Beverungen, R. Knackstedt, A. Winkelmann, in: J. Becker, R. Knackstedt, O. Müller, A. Winkelmann (Eds.), Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung Und Internetisierung, Berlin, Heidelberg, 2010, pp. 177--193.","ama":"Beverungen D, Knackstedt R, Winkelmann A. E-Services im Handel --- Auffindung und Dokumentation von Potenzialen zur Digitalisierung von Dienstleistungen für Hersteller und Kunden. In: Becker J, Knackstedt R, Müller O, Winkelmann A, eds. <i>Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung Und Internetisierung</i>. Berlin, Heidelberg; 2010:177--193. doi:<a href=\"https://doi.org/10.1007/978-3-642-11859-3_11\">10.1007/978-3-642-11859-3_11</a>","chicago":"Beverungen, Daniel, Ralf Knackstedt, and Axel Winkelmann. “E-Services Im Handel --- Auffindung Und Dokumentation von Potenzialen Zur Digitalisierung von Dienstleistungen Für Hersteller Und Kunden.” In <i>Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung Und Internetisierung</i>, edited by Jörg Becker, Ralf Knackstedt, Oliver Müller, and Axel Winkelmann, 177--193. Berlin, Heidelberg, 2010. <a href=\"https://doi.org/10.1007/978-3-642-11859-3_11\">https://doi.org/10.1007/978-3-642-11859-3_11</a>.","bibtex":"@inbook{Beverungen_Knackstedt_Winkelmann_2010, place={Berlin, Heidelberg}, title={E-Services im Handel --- Auffindung und Dokumentation von Potenzialen zur Digitalisierung von Dienstleistungen für Hersteller und Kunden}, DOI={<a href=\"https://doi.org/10.1007/978-3-642-11859-3_11\">10.1007/978-3-642-11859-3_11</a>}, booktitle={Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung und Internetisierung}, author={Beverungen, Daniel and Knackstedt, Ralf and Winkelmann, Axel}, editor={Becker, Jörg and Knackstedt, Ralf and Müller, Oliver and Winkelmann, AxelEditors}, year={2010}, pages={177--193} }","mla":"Beverungen, Daniel, et al. “E-Services Im Handel --- Auffindung Und Dokumentation von Potenzialen Zur Digitalisierung von Dienstleistungen Für Hersteller Und Kunden.” <i>Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung Und Internetisierung</i>, edited by Jörg Becker et al., 2010, pp. 177--193, doi:<a href=\"https://doi.org/10.1007/978-3-642-11859-3_11\">10.1007/978-3-642-11859-3_11</a>.","apa":"Beverungen, D., Knackstedt, R., &#38; Winkelmann, A. (2010). E-Services im Handel --- Auffindung und Dokumentation von Potenzialen zur Digitalisierung von Dienstleistungen für Hersteller und Kunden. In J. Becker, R. Knackstedt, O. Müller, &#38; A. Winkelmann (Eds.), <i>Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung und Internetisierung</i> (pp. 177--193). Berlin, Heidelberg. <a href=\"https://doi.org/10.1007/978-3-642-11859-3_11\">https://doi.org/10.1007/978-3-642-11859-3_11</a>","ieee":"D. Beverungen, R. Knackstedt, and A. Winkelmann, “E-Services im Handel --- Auffindung und Dokumentation von Potenzialen zur Digitalisierung von Dienstleistungen für Hersteller und Kunden,” in <i>Vertriebsinformationssysteme --- Standardisierung, Individualisierung, Hybridisierung und Internetisierung</i>, J. Becker, R. Knackstedt, O. Müller, and A. Winkelmann, Eds. Berlin, Heidelberg, 2010, pp. 177--193."},"extern":"1"},{"citation":{"bibtex":"@book{Weddeling_Steiner_Müller_Knackstedt_Becker_Backhaus_Beverungen_Frohs_2010, place={Berlin, Heidelberg}, title={Vermarktung hybrider Leistungsbündel}, DOI={<a href=\"https://doi.org/10.1007/978-3-642-12830-1\">10.1007/978-3-642-12830-1</a>}, publisher={Springer Berlin Heidelberg}, author={Weddeling, Matthias and Steiner, Michael and Müller, Oliver and Knackstedt, Ralf and Becker, Jörg and Backhaus, Klaus and Beverungen, Daniel and Frohs, Margarethe}, year={2010} }","ama":"Weddeling M, Steiner M, Müller O, et al. <i>Vermarktung Hybrider Leistungsbündel</i>. Berlin, Heidelberg: Springer Berlin Heidelberg; 2010. doi:<a href=\"https://doi.org/10.1007/978-3-642-12830-1\">10.1007/978-3-642-12830-1</a>","mla":"Weddeling, Matthias, et al. <i>Vermarktung Hybrider Leistungsbündel</i>. 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