[{"date_created":"2018-08-27T12:31:20Z","status":"public","has_accepted_license":"1","volume":8,"file":[{"file_size":152623,"creator":"hclaudia","file_id":"4143","date_updated":"2018-08-27T12:32:07Z","content_type":"application/pdf","success":1,"relation":"main_file","date_created":"2018-08-27T12:32:07Z","file_name":"Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation.pdf","access_level":"closed"}],"file_date_updated":"2018-08-27T12:32:07Z","publication":"physica status solidi (c)","publisher":"Wiley","author":[{"last_name":"Häberlen","full_name":"Häberlen, Maik","first_name":"Maik"},{"last_name":"Murphy","first_name":"Brian","full_name":"Murphy, Brian"},{"last_name":"Stritzker","first_name":"Bernd","full_name":"Stritzker, Bernd"},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"}],"user_id":"55706","ddc":["530"],"abstract":[{"lang":"eng","text":"This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized 3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a near-interface defect structure containing nanometric voids and dislocation loops by the implantation of He ions and subsequent thermal annealing. The structural features of this defect microstructure are investigated by transmission electron microscopy. High-resolution X-ray diffraction in a parallel beam configuration is used to quantify the strain state of the top SiC layer. Further annealing experiments were carried out in order to emulate typical process conditions for the growth of wide-bandgap semiconductors like, for example GaN. It is found that prolonged annealing at elevated temperatures leads to coarsening of the voids and to a much less efficient strain reduction. We show that this issue can be resolved by the co-implantation of oxygen to form highly thermally stable cavity/extended defect structures. The technique presented here may be useful for a variety of other thermally mismatched bulk/thin film couples as well."}],"article_type":"original","page":"944-947","type":"journal_article","year":"2011","citation":{"chicago":"Häberlen, Maik, Brian Murphy, Bernd Stritzker, and Jörg Lindner. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.” Physica Status Solidi (C) 8, no. 3 (2011): 944–47. https://doi.org/10.1002/pssc.201000342.","ama":"Häberlen M, Murphy B, Stritzker B, Lindner J. Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation. physica status solidi (c). 2011;8(3):944-947. doi:10.1002/pssc.201000342","apa":"Häberlen, M., Murphy, B., Stritzker, B., & Lindner, J. (2011). Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation. Physica Status Solidi (C), 8(3), 944–947. https://doi.org/10.1002/pssc.201000342","mla":"Häberlen, Maik, et al. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.” Physica Status Solidi (C), vol. 8, no. 3, Wiley, 2011, pp. 944–47, doi:10.1002/pssc.201000342.","bibtex":"@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation}, volume={8}, DOI={10.1002/pssc.201000342}, number={3}, journal={physica status solidi (c)}, publisher={Wiley}, author={Häberlen, Maik and Murphy, Brian and Stritzker, Bernd and Lindner, Jörg}, year={2011}, pages={944–947} }","short":"M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C) 8 (2011) 944–947.","ieee":"M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation,” physica status solidi (c), vol. 8, no. 3, pp. 944–947, 2011."},"issue":"3","intvolume":" 8","_id":"4142","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"department":[{"_id":"286"}],"title":"Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation","language":[{"iso":"eng"}],"doi":"10.1002/pssc.201000342","date_updated":"2022-01-06T07:00:24Z"},{"title":"Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure","department":[{"_id":"15"},{"_id":"286"}],"publication_identifier":{"issn":["0022-2313"]},"publication_status":"published","date_updated":"2022-01-06T07:00:25Z","doi":"10.1016/j.jlumin.2011.05.035","language":[{"iso":"eng"}],"abstract":[{"text":"Photoluminescence spectra of Sm^(2+)-doped BaBr^2 have been measured under hydrostatic pressures up to 17 GPa at room temperature. In the low pressure range a red-shift of the broad 5d–4f transition of -145 cm^(-1)/GPa is observed. From 5 to 8 GPa a phase mixtureof the initial orthorhombic phase and the high-pressure monoclinic phase gives rise to two 5d–4f bands, which are strongly overlapping. Above 8 GPa the crystalis completely transformed to its high-pressure phase where two different Sm2^(2+) sites exist, but only one broad 5d–4f transition is detected. It exhibits are d-shift of -36 cm^(-1)/GPa. In addition,the line shifts of the (_^5)D_0→(_^7)F_J (J=0,1,2) transitions are investigated. Linear shifts of -19cm^(-1)/GPa for J=0,2 and of -13cm^(-1)/GPa for J01 are observed in the pressure range from 0 to 5 GPa.","lang":"eng"}],"article_type":"original","ddc":["530"],"user_id":"55706","file_date_updated":"2018-08-27T12:45:30Z","publication":"Journal of Luminescence","author":[{"last_name":"Wiegand","full_name":"Wiegand, Marie Christin","first_name":"Marie Christin"},{"last_name":"Sievers","first_name":"Werner","full_name":"Sievers, Werner"},{"last_name":"Lindner","id":"20797","first_name":"Jörg","full_name":"Lindner, Jörg"},{"last_name":"Tröster","full_name":"Tröster, Th.","first_name":"Th."},{"last_name":"Schweizer","first_name":"S.","full_name":"Schweizer, S."}],"publisher":"Elsevier BV","file":[{"file_name":"Photoluminescence properties of Sm(2+)-doped BaBr2 under hydrostatic pressure.pdf","date_created":"2018-08-27T12:45:30Z","access_level":"closed","creator":"hclaudia","file_id":"4149","file_size":279989,"relation":"main_file","success":1,"content_type":"application/pdf","date_updated":"2018-08-27T12:45:30Z"}],"volume":131,"date_created":"2018-08-27T12:44:42Z","status":"public","has_accepted_license":"1","intvolume":" 131","_id":"4148","issue":"11","page":"2400-2403","citation":{"ieee":"M. C. Wiegand, W. Sievers, J. Lindner, T. Tröster, and S. Schweizer, “Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure,” Journal of Luminescence, vol. 131, no. 11, pp. 2400–2403, 2011.","short":"M.C. Wiegand, W. Sievers, J. Lindner, T. Tröster, S. Schweizer, Journal of Luminescence 131 (2011) 2400–2403.","mla":"Wiegand, Marie Christin, et al. “Photoluminescence Properties of Sm2+-Doped BaBr2 under Hydrostatic Pressure.” Journal of Luminescence, vol. 131, no. 11, Elsevier BV, 2011, pp. 2400–03, doi:10.1016/j.jlumin.2011.05.035.","bibtex":"@article{Wiegand_Sievers_Lindner_Tröster_Schweizer_2011, title={Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure}, volume={131}, DOI={10.1016/j.jlumin.2011.05.035}, number={11}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Wiegand, Marie Christin and Sievers, Werner and Lindner, Jörg and Tröster, Th. and Schweizer, S.}, year={2011}, pages={2400–2403} }","chicago":"Wiegand, Marie Christin, Werner Sievers, Jörg Lindner, Th. Tröster, and S. Schweizer. “Photoluminescence Properties of Sm2+-Doped BaBr2 under Hydrostatic Pressure.” Journal of Luminescence 131, no. 11 (2011): 2400–2403. https://doi.org/10.1016/j.jlumin.2011.05.035.","apa":"Wiegand, M. C., Sievers, W., Lindner, J., Tröster, T., & Schweizer, S. (2011). Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure. Journal of Luminescence, 131(11), 2400–2403. https://doi.org/10.1016/j.jlumin.2011.05.035","ama":"Wiegand MC, Sievers W, Lindner J, Tröster T, Schweizer S. Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure. Journal of Luminescence. 2011;131(11):2400-2403. doi:10.1016/j.jlumin.2011.05.035"},"type":"journal_article","year":"2011"},{"department":[{"_id":"15"},{"_id":"286"}],"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"title":"Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:00:26Z","doi":"10.1103/physrevb.84.064126","author":[{"last_name":"Zirkelbach","full_name":"Zirkelbach, F.","first_name":"F."},{"first_name":"B.","full_name":"Stritzker, B.","last_name":"Stritzker"},{"first_name":"K.","full_name":"Nordlund, K.","last_name":"Nordlund"},{"first_name":"Jörg","full_name":"Lindner, Jörg","last_name":"Lindner","id":"20797"},{"last_name":"Schmidt","full_name":"Schmidt, W. G.","first_name":"W. G."},{"last_name":"Rauls","first_name":"E.","full_name":"Rauls, E."}],"publisher":"American Physical Society (APS)","file_date_updated":"2018-08-27T13:18:53Z","publication":"Physical Review B","file":[{"date_created":"2018-08-27T13:18:53Z","file_name":"Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon.pdf","access_level":"closed","file_id":"4151","creator":"hclaudia","file_size":1541698,"success":1,"relation":"main_file","content_type":"application/pdf","date_updated":"2018-08-27T13:18:53Z"}],"volume":84,"status":"public","has_accepted_license":"1","date_created":"2018-08-27T13:17:45Z","article_type":"original","abstract":[{"lang":"eng","text":"Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and\r\nfirst-principlesmethods are presented. The calculations aim at a comprehensive,microscopic understanding of the\r\nprecipitation mechanism in the context of controversial discussions in the literature. For the quantum-mechanical\r\ntreatment, basic processes assumed in the precipitation process are calculated in feasible systems of small\r\nsize. The migration mechanism of a carbon \u0002100\u0003 interstitial and silicon \u000211 0\u0003 self-interstitial in otherwise\r\ndefect-free silicon are investigated using density functional theory calculations. The influence of a nearby\r\nvacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been\r\ninvestigated systematically. Interactions of various combinations of defects have been characterized including a\r\ncouple of selected migration pathways within these configurations. Most of the investigated pairs of defects tend\r\nto agglomerate allowing for a reduction in strain. The formation of structures involving strong carbon–carbon\r\nbonds turns out to be very unlikely. In contrast, substitutional carbon occurs in all probability. A long range\r\ncapture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies. A\r\nrather small capture radius is predicted for substitutional carbon and silicon self-interstitials. Initial assumptions\r\nregarding the precipitation mechanism of silicon carbide in bulk silicon are established and conformability to\r\nexperimental findings is discussed. Furthermore, results of the accurate first-principles calculations on defects\r\nand carbon diffusion in silicon are compared to results of classical potential simulations revealing significant\r\nlimitations of the latter method. An approach to work around this problem is proposed. Finally, results of the\r\nclassical potential molecular dynamics simulations of large systems are examined, which reinforce previous\r\nassumptions and give further insight into basic processes involved in the silicon carbide transition."}],"ddc":["530"],"user_id":"55706","year":"2011","type":"journal_article","citation":{"chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Combinedab Initioand Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” Physical Review B 84, no. 6 (2011). https://doi.org/10.1103/physrevb.84.064126.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. Physical Review B. 2011;84(6). doi:10.1103/physrevb.84.064126","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., & Rauls, E. (2011). Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. Physical Review B, 84(6). https://doi.org/10.1103/physrevb.84.064126","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon}, volume={84}, DOI={10.1103/physrevb.84.064126}, number={6064126}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2011} }","mla":"Zirkelbach, F., et al. “Combinedab Initioand Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” Physical Review B, vol. 84, no. 6, 064126, American Physical Society (APS), 2011, doi:10.1103/physrevb.84.064126.","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon,” Physical Review B, vol. 84, no. 6, 2011."},"_id":"4150","intvolume":" 84","article_number":"064126","issue":"6"},{"date_updated":"2022-01-06T07:00:26Z","doi":"10.1016/s0313-5926(11)50004-9","title":"Paying for Performance in Hospitals","department":[{"_id":"280"},{"_id":"475"}],"publication_identifier":{"issn":["0313-5926"]},"publication_status":"published","_id":"4157","intvolume":" 41","issue":"1","type":"journal_article","citation":{"ieee":"B. Hehenkamp and O. Kaarboe, “Paying for Performance in Hospitals,” Economic Analysis and Policy, vol. 41, no. 1, pp. 49–70, 2011.","short":"B. Hehenkamp, O. Kaarboe, Economic Analysis and Policy 41 (2011) 49–70.","mla":"Hehenkamp, Burkhard, and Oddvar Kaarboe. “Paying for Performance in Hospitals.” Economic Analysis and Policy, vol. 41, no. 1, Elsevier BV, 2011, pp. 49–70, doi:10.1016/s0313-5926(11)50004-9.","bibtex":"@article{Hehenkamp_Kaarboe_2011, title={Paying for Performance in Hospitals}, volume={41}, DOI={10.1016/s0313-5926(11)50004-9}, number={1}, journal={Economic Analysis and Policy}, publisher={Elsevier BV}, author={Hehenkamp, Burkhard and Kaarboe, Oddvar}, year={2011}, pages={49–70} }","apa":"Hehenkamp, B., & Kaarboe, O. (2011). Paying for Performance in Hospitals. Economic Analysis and Policy, 41(1), 49–70. https://doi.org/10.1016/s0313-5926(11)50004-9","ama":"Hehenkamp B, Kaarboe O. Paying for Performance in Hospitals. Economic Analysis and Policy. 2011;41(1):49-70. doi:10.1016/s0313-5926(11)50004-9","chicago":"Hehenkamp, Burkhard, and Oddvar Kaarboe. “Paying for Performance in Hospitals.” Economic Analysis and Policy 41, no. 1 (2011): 49–70. https://doi.org/10.1016/s0313-5926(11)50004-9."},"year":"2011","page":"49-70","extern":"1","user_id":"37339","author":[{"id":"37339","last_name":"Hehenkamp","full_name":"Hehenkamp, Burkhard","first_name":"Burkhard"},{"last_name":"Kaarboe","first_name":"Oddvar","full_name":"Kaarboe, Oddvar"}],"publisher":"Elsevier BV","publication":"Economic Analysis and Policy","status":"public","date_created":"2018-08-27T15:08:06Z","volume":41},{"publication_date":"2011-11-24","application_number":"102010020817","_id":"4171","date_updated":"2022-01-06T07:00:28Z","type":"patent","citation":{"short":"J. Förstner, D. Mantei, S.M. de Vasconcellos, A. Zrenner, (2011).","ieee":"J. Förstner, D. Mantei, S. M. de Vasconcellos, and A. Zrenner, “Method for transmission of information about polarization state of photons to stationary system.” 2011.","chicago":"Förstner, Jens, D. Mantei, S. Michaelis de Vasconcellos, and Artur Zrenner. “Method for Transmission of Information about Polarization State of Photons to Stationary System,” 2011.","ama":"Förstner J, Mantei D, de Vasconcellos SM, Zrenner A. Method for transmission of information about polarization state of photons to stationary system. 2011.","apa":"Förstner, J., Mantei, D., de Vasconcellos, S. M., & Zrenner, A. (2011). Method for transmission of information about polarization state of photons to stationary system.","bibtex":"@article{Förstner_Mantei_de Vasconcellos_Zrenner_2011, title={Method for transmission of information about polarization state of photons to stationary system}, author={Förstner, Jens and Mantei, D. and de Vasconcellos, S. Michaelis and Zrenner, Artur}, year={2011} }","mla":"Förstner, Jens, et al. Method for Transmission of Information about Polarization State of Photons to Stationary System. 2011."},"year":"2011","main_file_link":[{"url":"https://patents.google.com/patent/DE102010020817A1/en"}],"title":"Method for transmission of information about polarization state of photons to stationary system","user_id":"158","ipn":"DE102010020817A1","application_date":"2010-05-18","abstract":[{"text":"The method involves exciting a quantum system with photons in a polarization state. Two states of the quantum system are excited with linear horizontal and vertical polarizations that are orthogonal to each other, where the states exhibit an energetic gap smaller than energetic bandwidth of photons. The states are assigned based on the polarizations, where the quantum system is arranged in a superposition state. The quantum system is formed by a quantum bit that is formed as a two-level system.","lang":"eng"},{"text":"Die Erfindung betrifft ein Verfahren zur Übertragung des Polarisationszustandes von Photonen in ein stationäres System, bei dem mit Photonen eines Polarisationszustandes ein Quanten-System angeregt wird, das zwei Zustände aufweist, die mit zueinander orthogonalen Polarisationen anregbar sind und deren energetischer Abstand kleiner ist als die energetische Bandbreite der Photonen, wobei beide Zustände in Abhängigkeit von der Polarisation besetzt werden und das Quantensystem einen Superpositionszustand beider Zustände einnimmt.","lang":"eng"}],"status":"public","ipc":"G01J 4/00","date_created":"2018-08-28T08:46:40Z","author":[{"id":"158","last_name":"Förstner","orcid":"0000-0001-7059-9862","full_name":"Förstner, Jens","first_name":"Jens"},{"first_name":"D.","full_name":"Mantei, D.","last_name":"Mantei"},{"last_name":"de Vasconcellos","first_name":"S. Michaelis ","full_name":"de Vasconcellos, S. Michaelis "},{"id":"606","last_name":"Zrenner","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur","first_name":"Artur"}],"department":[{"_id":"15"},{"_id":"290"}],"keyword":["tet_topic_qd"]},{"page":"44-48","citation":{"ieee":"G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, and W. G. Schmidt, “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy,” Ferroelectrics, vol. 420, no. 1, pp. 44–48, 2011.","short":"G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, W.G. Schmidt, Ferroelectrics 420 (2011) 44–48.","bibtex":"@article{Berth_Hahn_Wiedemeier_Zrenner_Sanna_Schmidt_2011, title={Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy}, volume={420}, DOI={10.1080/00150193.2011.594774}, number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Berth, Gerhard and Hahn, Wjatscheslaw and Wiedemeier, Volker and Zrenner, Artur and Sanna, Simone and Schmidt, Wolf Gero}, year={2011}, pages={44–48} }","mla":"Berth, Gerhard, et al. “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy.” Ferroelectrics, vol. 420, no. 1, Informa UK Limited, 2011, pp. 44–48, doi:10.1080/00150193.2011.594774.","chicago":"Berth, Gerhard, Wjatscheslaw Hahn, Volker Wiedemeier, Artur Zrenner, Simone Sanna, and Wolf Gero Schmidt. “Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy.” Ferroelectrics 420, no. 1 (2011): 44–48. https://doi.org/10.1080/00150193.2011.594774.","apa":"Berth, G., Hahn, W., Wiedemeier, V., Zrenner, A., Sanna, S., & Schmidt, W. G. (2011). Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy. Ferroelectrics, 420(1), 44–48. https://doi.org/10.1080/00150193.2011.594774","ama":"Berth G, Hahn W, Wiedemeier V, Zrenner A, Sanna S, Schmidt WG. Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy. Ferroelectrics. 2011;420(1):44-48. doi:10.1080/00150193.2011.594774"},"type":"journal_article","year":"2011","issue":"1","_id":"4377","intvolume":" 420","volume":420,"date_created":"2018-09-11T14:10:35Z","status":"public","publication":"Ferroelectrics","keyword":["Raman spectroscopy","ferroelectric domains","LiNbO3","confocal imaging"],"publisher":"Informa UK Limited","author":[{"first_name":"Gerhard","full_name":"Berth, Gerhard","last_name":"Berth","id":"53"},{"full_name":"Hahn, Wjatscheslaw","first_name":"Wjatscheslaw","last_name":"Hahn"},{"first_name":"Volker","full_name":"Wiedemeier, Volker","last_name":"Wiedemeier"},{"last_name":"Zrenner","id":"606","first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur"},{"last_name":"Sanna","full_name":"Sanna, Simone","first_name":"Simone"},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt"}],"user_id":"49428","abstract":[{"lang":"eng","text":"Confocal Raman spectroscopy was performed as an archetype imaging method to study the ferroelectric domain structure of periodically poled lithium niobate. More precisely, the linkage out of spatial resolution and spectral information proved itself as very useful. Here a specific modulation of the Raman lines by the local variation of polarity and a non-symmetric measuring-signal across the domain structure were found, which allows for imaging of domain boundaries as well as oppositely orientated domains. The high potential of this method is demonstrated by the visualization of the ferroelectric domain structures based on various phonon modes."}],"article_type":"original","language":[{"iso":"eng"}],"doi":"10.1080/00150193.2011.594774","date_updated":"2022-01-06T07:01:00Z","publication_identifier":{"issn":["0015-0193","1563-5112"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"title":"Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy"},{"volume":8,"status":"public","date_created":"2018-09-11T14:15:28Z","author":[{"full_name":"Mehta, Minisha","first_name":"Minisha","last_name":"Mehta"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, Andreas D.","first_name":"Andreas D."},{"full_name":"Michaelis de Vasconcellos, Steffen","first_name":"Steffen","last_name":"Michaelis de Vasconcellos"},{"last_name":"Zrenner","id":"606","first_name":"Artur","orcid":"0000-0002-5190-0944","full_name":"Zrenner, Artur"},{"id":"20798","last_name":"Meier","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik"}],"publisher":"Wiley","publication":"physica status solidi (c)","keyword":["molecular beam epitaxy","quantum dot","site control","electroluminescence"],"user_id":"20798","article_type":"original","abstract":[{"lang":"eng","text":"Using a combined all-ultra-high-vacuum process employing lateral patterning with focused ion beams and molecular beam epitaxy, site-selective growth of single (In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally positioned quantum dots in the intrinsic region of a p-i-n junction so that the quantum dots can be driven electrically. In this contribution, we will present our results on the morphological properties of the ion-beam modified surface on which the quantum dot nucleation occurs together with a characterization of the electrical and optoelectronic properties. We will demonstrate that a single, individual quantum dot can directly be electrically addressed."}],"citation":{"bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2011, title={Electrically driven intentionally positioned single quantum dot}, volume={8}, DOI={10.1002/pssc.201000828}, number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mehta, Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Zrenner, Artur and Meier, Cedrik}, year={2011}, pages={1182–1185} }","mla":"Mehta, Minisha, et al. “Electrically Driven Intentionally Positioned Single Quantum Dot.” Physica Status Solidi (C), vol. 8, no. 4, Wiley, 2011, pp. 1182–85, doi:10.1002/pssc.201000828.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2011). Electrically driven intentionally positioned single quantum dot. Physica Status Solidi (C), 8(4), 1182–1185. https://doi.org/10.1002/pssc.201000828","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. Electrically driven intentionally positioned single quantum dot. physica status solidi (c). 2011;8(4):1182-1185. doi:10.1002/pssc.201000828","chicago":"Mehta, Minisha, Dirk Reuter, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “Electrically Driven Intentionally Positioned Single Quantum Dot.” Physica Status Solidi (C) 8, no. 4 (2011): 1182–85. https://doi.org/10.1002/pssc.201000828.","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “Electrically driven intentionally positioned single quantum dot,” physica status solidi (c), vol. 8, no. 4, pp. 1182–1185, 2011.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Physica Status Solidi (C) 8 (2011) 1182–1185."},"year":"2011","type":"journal_article","page":"1182-1185","issue":"4","intvolume":" 8","_id":"4378","publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"title":"Electrically driven intentionally positioned single quantum dot","language":[{"iso":"eng"}],"doi":"10.1002/pssc.201000828","date_updated":"2022-01-06T07:01:00Z"},{"title":"Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111)","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"}],"publication_identifier":{"issn":["0040-6090"]},"publication_status":"published","date_updated":"2022-01-06T07:01:00Z","doi":"10.1016/j.tsf.2011.07.063","language":[{"iso":"eng"}],"abstract":[{"text":"Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers with an off orientation of 6º towards < 111> by means of electrochemical etching in ethanoic-based HF electrolytes. These substrates are of interest for the epitaxial growth of III–V compound semiconductor stacks on their top for the production of multi-junction solar cells and very thin electronic devices. We demonstrate transfer of porous layers after an annealing process in hydrogen atmosphere. Electron Back-Scatter Diffraction analysis confirms that the substrate orientation is conserved during the etching and annealing steps. Confocal μ-Raman spectroscopy analysis shows a decrease in the Raman signal intensity after etching and a subsequent increase after annealing while no shift is observed. By means of Atomic Force Microscopy, analysis the surface appearance after the etching and annealing steps can be visualized. The mean surface roughness varies during the process from 0.55 nm for the unprocessed wafers to 0.27 nm after etching and 0.78 nm after annealing. The decrease of average roughness after etching is caused by an electropolishing step prior to porous formation. Despite of slight increase of mean surface roughness after annealing the samples are still appropriate for high quality epitaxial growth and subsequent lift-off.","lang":"eng"}],"article_type":"original","user_id":"49428","publication":"Thin Solid Films","keyword":["Porous Si","Layer transfer","Thin-film","Photovoltaics"],"publisher":"Elsevier BV","author":[{"last_name":"Garralaga Rojas","first_name":"E.","full_name":"Garralaga Rojas, E."},{"last_name":"Terheiden","full_name":"Terheiden, B.","first_name":"B."},{"first_name":"H.","full_name":"Plagwitz, H.","last_name":"Plagwitz"},{"last_name":"Hensen","full_name":"Hensen, J.","first_name":"J."},{"first_name":"V.","full_name":"Wiedemeier, V.","last_name":"Wiedemeier"},{"id":"53","last_name":"Berth","full_name":"Berth, Gerhard","first_name":"Gerhard"},{"first_name":"Artur","full_name":"Zrenner, Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","id":"606"},{"first_name":"R.","full_name":"Brendel, R.","last_name":"Brendel"}],"date_created":"2018-09-11T14:21:12Z","status":"public","volume":520,"_id":"4379","intvolume":" 520","issue":"1","page":"606-609","year":"2011","citation":{"short":"E. Garralaga Rojas, B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier, G. Berth, A. Zrenner, R. Brendel, Thin Solid Films 520 (2011) 606–609.","ieee":"E. Garralaga Rojas et al., “Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111),” Thin Solid Films, vol. 520, no. 1, pp. 606–609, 2011.","chicago":"Garralaga Rojas, E., B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier, Gerhard Berth, Artur Zrenner, and R. Brendel. “Lift-off of Mesoporous Layers by Electrochemical Etching on Si (100) Substrates with Miscut of 6° off towards (111).” Thin Solid Films 520, no. 1 (2011): 606–9. https://doi.org/10.1016/j.tsf.2011.07.063.","apa":"Garralaga Rojas, E., Terheiden, B., Plagwitz, H., Hensen, J., Wiedemeier, V., Berth, G., … Brendel, R. (2011). Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111). Thin Solid Films, 520(1), 606–609. https://doi.org/10.1016/j.tsf.2011.07.063","ama":"Garralaga Rojas E, Terheiden B, Plagwitz H, et al. Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111). Thin Solid Films. 2011;520(1):606-609. doi:10.1016/j.tsf.2011.07.063","bibtex":"@article{Garralaga Rojas_Terheiden_Plagwitz_Hensen_Wiedemeier_Berth_Zrenner_Brendel_2011, title={Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111)}, volume={520}, DOI={10.1016/j.tsf.2011.07.063}, number={1}, journal={Thin Solid Films}, publisher={Elsevier BV}, author={Garralaga Rojas, E. and Terheiden, B. and Plagwitz, H. and Hensen, J. and Wiedemeier, V. and Berth, Gerhard and Zrenner, Artur and Brendel, R.}, year={2011}, pages={606–609} }","mla":"Garralaga Rojas, E., et al. “Lift-off of Mesoporous Layers by Electrochemical Etching on Si (100) Substrates with Miscut of 6° off towards (111).” Thin Solid Films, vol. 520, no. 1, Elsevier BV, 2011, pp. 606–09, doi:10.1016/j.tsf.2011.07.063."},"type":"journal_article"},{"date_created":"2018-10-30T13:42:26Z","status":"public","editor":[{"full_name":"Gatermann, Inken","first_name":"Inken","last_name":"Gatermann"},{"full_name":"Fleck, Myriam","first_name":"Myriam","last_name":"Fleck"}],"department":[{"_id":"526"}],"publication":"Mit Dienstleistungen die Zukunft gestalten: Impulse aus Forschung und Praxis. Beiträge der 8. Dienstleistungstagung des BMBF","author":[{"full_name":"Becker, Jörg","first_name":"Jörg","last_name":"Becker"},{"last_name":"Beverungen","id":"59677","first_name":"Daniel","full_name":"Beverungen, Daniel"},{"last_name":"Knackstedt","first_name":"Ralf","full_name":"Knackstedt, Ralf"},{"last_name":"Matzner","first_name":"Martin","full_name":"Matzner, Martin"},{"first_name":"Oliver","full_name":"Müller, Oliver","last_name":"Müller","id":"72849"},{"last_name":"Pöppelbuß","full_name":"Pöppelbuß, Jens","first_name":"Jens"}],"user_id":"21671","title":"Integrierte Informationslogistik in der hybriden Wertschöpfung","place":"Frankfurt am Main","extern":"1","language":[{"iso":"eng"}],"page":"247--255","citation":{"short":"J. Becker, D. Beverungen, R. Knackstedt, M. Matzner, O. Müller, J. Pöppelbuß, in: I. Gatermann, M. Fleck (Eds.), Mit Dienstleistungen Die Zukunft Gestalten: Impulse Aus Forschung Und Praxis. Beiträge Der 8. Dienstleistungstagung Des BMBF, Frankfurt am Main, 2011, pp. 247--255.","ieee":"J. Becker, D. Beverungen, R. Knackstedt, M. Matzner, O. Müller, and J. Pöppelbuß, “Integrierte Informationslogistik in der hybriden Wertschöpfung,” in Mit Dienstleistungen die Zukunft gestalten: Impulse aus Forschung und Praxis. Beiträge der 8. Dienstleistungstagung des BMBF, I. Gatermann and M. Fleck, Eds. Frankfurt am Main, 2011, pp. 247--255.","ama":"Becker J, Beverungen D, Knackstedt R, Matzner M, Müller O, Pöppelbuß J. Integrierte Informationslogistik in der hybriden Wertschöpfung. In: Gatermann I, Fleck M, eds. Mit Dienstleistungen Die Zukunft Gestalten: Impulse Aus Forschung Und Praxis. Beiträge Der 8. Dienstleistungstagung Des BMBF. Frankfurt am Main; 2011:247--255.","apa":"Becker, J., Beverungen, D., Knackstedt, R., Matzner, M., Müller, O., & Pöppelbuß, J. (2011). Integrierte Informationslogistik in der hybriden Wertschöpfung. In I. Gatermann & M. Fleck (Eds.), Mit Dienstleistungen die Zukunft gestalten: Impulse aus Forschung und Praxis. Beiträge der 8. Dienstleistungstagung des BMBF (pp. 247--255). Frankfurt am Main.","chicago":"Becker, Jörg, Daniel Beverungen, Ralf Knackstedt, Martin Matzner, Oliver Müller, and Jens Pöppelbuß. “Integrierte Informationslogistik in Der Hybriden Wertschöpfung.” In Mit Dienstleistungen Die Zukunft Gestalten: Impulse Aus Forschung Und Praxis. Beiträge Der 8. Dienstleistungstagung Des BMBF, edited by Inken Gatermann and Myriam Fleck, 247--255. Frankfurt am Main, 2011.","mla":"Becker, Jörg, et al. “Integrierte Informationslogistik in Der Hybriden Wertschöpfung.” Mit Dienstleistungen Die Zukunft Gestalten: Impulse Aus Forschung Und Praxis. Beiträge Der 8. Dienstleistungstagung Des BMBF, edited by Inken Gatermann and Myriam Fleck, 2011, pp. 247--255.","bibtex":"@inbook{Becker_Beverungen_Knackstedt_Matzner_Müller_Pöppelbuß_2011, place={Frankfurt am Main}, title={Integrierte Informationslogistik in der hybriden Wertschöpfung}, booktitle={Mit Dienstleistungen die Zukunft gestalten: Impulse aus Forschung und Praxis. Beiträge der 8. Dienstleistungstagung des BMBF}, author={Becker, Jörg and Beverungen, Daniel and Knackstedt, Ralf and Matzner, Martin and Müller, Oliver and Pöppelbuß, Jens}, editor={Gatermann, Inken and Fleck, MyriamEditors}, year={2011}, pages={247--255} }"},"year":"2011","type":"book_chapter","date_updated":"2022-01-06T07:01:35Z","_id":"5038"},{"page":"399--424","citation":{"short":"J. Becker, D. Beverungen, R. Knackstedt, A. Stein, in: T. Böhmann, W. Burr, T. Herrmann, H. Krcmar (Eds.), Implementing International Services: A Tailorable Method for Market Assessment, Modularization, and Process Transfer, Wiesbaden, 2011, pp. 399--424.","ieee":"J. Becker, D. Beverungen, R. Knackstedt, and A. Stein, “Engineering, Sales, and Delivery of Modular Value Bundles --- A Framework for Configurative Modeling,” in Implementing International Services: A tailorable method for market assessment, modularization, and process transfer, T. Böhmann, W. Burr, T. Herrmann, and H. Krcmar, Eds. Wiesbaden, 2011, pp. 399--424.","apa":"Becker, J., Beverungen, D., Knackstedt, R., & Stein, A. (2011). Engineering, Sales, and Delivery of Modular Value Bundles --- A Framework for Configurative Modeling. In T. Böhmann, W. Burr, T. Herrmann, & H. Krcmar (Eds.), Implementing International Services: A tailorable method for market assessment, modularization, and process transfer (pp. 399--424). Wiesbaden.","ama":"Becker J, Beverungen D, Knackstedt R, Stein A. Engineering, Sales, and Delivery of Modular Value Bundles --- A Framework for Configurative Modeling. In: Böhmann T, Burr W, Herrmann T, Krcmar H, eds. Implementing International Services: A Tailorable Method for Market Assessment, Modularization, and Process Transfer. Wiesbaden; 2011:399--424.","chicago":"Becker, Jörg, Daniel Beverungen, Ralf Knackstedt, and Armin Stein. “Engineering, Sales, and Delivery of Modular Value Bundles --- A Framework for Configurative Modeling.” In Implementing International Services: A Tailorable Method for Market Assessment, Modularization, and Process Transfer, edited by T Böhmann, W Burr, T Herrmann, and H Krcmar, 399--424. Wiesbaden, 2011.","mla":"Becker, Jörg, et al. “Engineering, Sales, and Delivery of Modular Value Bundles --- A Framework for Configurative Modeling.” Implementing International Services: A Tailorable Method for Market Assessment, Modularization, and Process Transfer, edited by T Böhmann et al., 2011, pp. 399--424.","bibtex":"@inbook{Becker_Beverungen_Knackstedt_Stein_2011, place={Wiesbaden}, title={Engineering, Sales, and Delivery of Modular Value Bundles --- A Framework for Configurative Modeling}, booktitle={Implementing International Services: A tailorable method for market assessment, modularization, and process transfer}, author={Becker, Jörg and Beverungen, Daniel and Knackstedt, Ralf and Stein, Armin}, editor={Böhmann, T and Burr, W and Herrmann, T and Krcmar, HEditors}, year={2011}, pages={399--424} }"},"year":"2011","type":"book_chapter","_id":"5039","date_updated":"2022-01-06T07:01:35Z","department":[{"_id":"526"}],"publication":"Implementing International Services: A tailorable method for market assessment, modularization, and process transfer","author":[{"last_name":"Becker","full_name":"Becker, Jörg","first_name":"Jörg"},{"first_name":"Daniel","full_name":"Beverungen, Daniel","last_name":"Beverungen","id":"59677"},{"last_name":"Knackstedt","first_name":"Ralf","full_name":"Knackstedt, Ralf"},{"full_name":"Stein, Armin","first_name":"Armin","last_name":"Stein"}],"publication_identifier":{"isbn":["978-3-8349-1577-1"]},"editor":[{"full_name":"Böhmann, T","first_name":"T","last_name":"Böhmann"},{"last_name":"Burr","first_name":"W","full_name":"Burr, W"},{"first_name":"T","full_name":"Herrmann, T","last_name":"Herrmann"},{"first_name":"H","full_name":"Krcmar, H","last_name":"Krcmar"}],"date_created":"2018-10-30T13:43:06Z","status":"public","extern":"1","place":"Wiesbaden","title":"Engineering, Sales, and Delivery of Modular Value Bundles --- A Framework for Configurative Modeling","user_id":"21671"}]