---
_id: '9589'
author:
- first_name: Marc
full_name: Beutner, Marc
id: '21118'
last_name: Beutner
citation:
ama: 'Beutner M. Kompetenzbegriff und Evaluation im beruflichen Bildungswesen. In:
Häcker T, Bartel K, Peters K, eds. Lehrerbildung phasenübergreifend denken.
Facetten einer bundesweiten Debatte. Baltmannsweiler; 2011:140-158.'
apa: Beutner, M. (2011). Kompetenzbegriff und Evaluation im beruflichen Bildungswesen.
In T. Häcker, K. Bartel, & K. Peters (Eds.), Lehrerbildung phasenübergreifend
denken. Facetten einer bundesweiten Debatte (pp. 140–158). Baltmannsweiler.
bibtex: '@inbook{Beutner_2011, place={Baltmannsweiler}, title={Kompetenzbegriff
und Evaluation im beruflichen Bildungswesen}, booktitle={Lehrerbildung phasenübergreifend
denken. Facetten einer bundesweiten Debatte}, author={Beutner, Marc}, editor={Häcker,
Th and Bartel, K and Peters, KEditors}, year={2011}, pages={140–158} }'
chicago: Beutner, Marc. “Kompetenzbegriff und Evaluation im beruflichen Bildungswesen.”
In Lehrerbildung phasenübergreifend denken. Facetten einer bundesweiten Debatte,
edited by Th Häcker, K Bartel, and K Peters, 140–58. Baltmannsweiler, 2011.
ieee: M. Beutner, “Kompetenzbegriff und Evaluation im beruflichen Bildungswesen,”
in Lehrerbildung phasenübergreifend denken. Facetten einer bundesweiten Debatte,
T. Häcker, K. Bartel, and K. Peters, Eds. Baltmannsweiler, 2011, pp. 140–158.
mla: Beutner, Marc. “Kompetenzbegriff und Evaluation im beruflichen Bildungswesen.”
Lehrerbildung phasenübergreifend denken. Facetten einer bundesweiten Debatte,
edited by Th Häcker et al., 2011, pp. 140–58.
short: 'M. Beutner, in: T. Häcker, K. Bartel, K. Peters (Eds.), Lehrerbildung phasenübergreifend
denken. Facetten einer bundesweiten Debatte, Baltmannsweiler, 2011, pp. 140–158.'
date_created: 2019-05-02T07:52:45Z
date_updated: 2022-01-06T07:04:16Z
department:
- _id: '211'
editor:
- first_name: Th
full_name: Häcker, Th
last_name: Häcker
- first_name: K
full_name: Bartel, K
last_name: Bartel
- first_name: K
full_name: Peters, K
last_name: Peters
language:
- iso: ger
page: 140 - 158
place: Baltmannsweiler
publication: Lehrerbildung phasenübergreifend denken. Facetten einer bundesweiten
Debatte
status: public
title: Kompetenzbegriff und Evaluation im beruflichen Bildungswesen
type: book_chapter
user_id: '66030'
year: '2011'
...
---
_id: '9726'
author:
- first_name: Christina
full_name: Flotmann, Christina
id: '8736'
last_name: Flotmann
- first_name: Merle
full_name: Tönnies, Merle
id: '555'
last_name: Tönnies
citation:
ama: 'Flotmann C, Tönnies M. Introducing Narrative in Drama. In: Tönnies M, Flotmann-Scholz
C, eds. Narrative in Drama: CDE Studies 18. Vol 18. Trier: WVT; 2011:9-17.'
apa: 'Flotmann, C., & Tönnies, M. (2011). Introducing Narrative in Drama. In
M. Tönnies & C. Flotmann-Scholz (Eds.), Narrative in Drama: CDE Studies
18 (Vol. 18, pp. 9–17). Trier: WVT.'
bibtex: '@inbook{Flotmann_Tönnies_2011, place={Trier}, title={Introducing Narrative
in Drama}, volume={18}, booktitle={Narrative in Drama: CDE Studies 18}, publisher={WVT},
author={Flotmann, Christina and Tönnies, Merle}, editor={Tönnies, Merle and Flotmann-Scholz,
ChristinaEditors}, year={2011}, pages={9–17} }'
chicago: 'Flotmann, Christina, and Merle Tönnies. “Introducing Narrative in Drama.”
In Narrative in Drama: CDE Studies 18, edited by Merle Tönnies and Christina
Flotmann-Scholz, 18:9–17. Trier: WVT, 2011.'
ieee: 'C. Flotmann and M. Tönnies, “Introducing Narrative in Drama,” in Narrative
in Drama: CDE Studies 18, vol. 18, M. Tönnies and C. Flotmann-Scholz, Eds.
Trier: WVT, 2011, pp. 9–17.'
mla: 'Flotmann, Christina, and Merle Tönnies. “Introducing Narrative in Drama.”
Narrative in Drama: CDE Studies 18, edited by Merle Tönnies and Christina
Flotmann-Scholz, vol. 18, WVT, 2011, pp. 9–17.'
short: 'C. Flotmann, M. Tönnies, in: M. Tönnies, C. Flotmann-Scholz (Eds.), Narrative
in Drama: CDE Studies 18, WVT, Trier, 2011, pp. 9–17.'
date_created: 2019-05-13T07:31:16Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '36'
- _id: '1'
- _id: '380'
editor:
- first_name: Merle
full_name: Tönnies, Merle
last_name: Tönnies
- first_name: Christina
full_name: Flotmann-Scholz, Christina
last_name: Flotmann-Scholz
intvolume: ' 18'
language:
- iso: eng
page: 9-17
place: Trier
publication: 'Narrative in Drama: CDE Studies 18'
publication_status: published
publisher: WVT
status: public
title: Introducing Narrative in Drama
type: book_chapter
user_id: '32277'
volume: 18
year: '2011'
...
---
_id: '9765'
abstract:
- lang: eng
text: The multi-objective optimal design of a piezoelectric sandwich ultrasonic
transducer is studied. The maximum vibration amplitude and the minimum electrical
input power are considered as optimization objectives. Design variables involve
continuous variables (dimensions of the transducer) and discrete variables (material
types). Based on analytical models, the optimal design is formulated as a constrained
multi-objective optimization problem. The optimization problem is then solved
by using the elitist non-dominated sorting genetic algorithm (NSGA-II) and Pareto-optimal
designs are obtained. The optimized results are analyzed and the preferred design
is proposed. The optimization procedure presented in this contribution can be
applied in multi-objective optimization problems of other piezoelectric transducers.
author:
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
- first_name: Bo
full_name: Fu, Bo
last_name: Fu
- first_name: Yi
full_name: Jing, Yi
last_name: Jing
- first_name: Xuan
full_name: Fu, Xuan
last_name: Fu
citation:
ama: Hemsel T, Fu B, Jing Y, Fu X. Multi-Objective Optimization of a Piezoelectric
Sandwich Ultrasonic Transducer by Using Elitist Non-Dominated Sorting Genetic
Algorithm. Key Engineering Materials. 2011;474-476:1808-1812. doi:10.4028/www.scientific.net/KEM.474-476.1808
apa: Hemsel, T., Fu, B., Jing, Y., & Fu, X. (2011). Multi-Objective Optimization
of a Piezoelectric Sandwich Ultrasonic Transducer by Using Elitist Non-Dominated
Sorting Genetic Algorithm. Key Engineering Materials, 474–476,
1808–1812. https://doi.org/10.4028/www.scientific.net/KEM.474-476.1808
bibtex: '@article{Hemsel_Fu_Jing_Fu_2011, title={Multi-Objective Optimization of
a Piezoelectric Sandwich Ultrasonic Transducer by Using Elitist Non-Dominated
Sorting Genetic Algorithm}, volume={474–476}, DOI={10.4028/www.scientific.net/KEM.474-476.1808},
journal={Key Engineering Materials}, publisher={Trans Tech Publ}, author={Hemsel,
Tobias and Fu, Bo and Jing, Yi and Fu, Xuan}, year={2011}, pages={1808–1812} }'
chicago: 'Hemsel, Tobias, Bo Fu, Yi Jing, and Xuan Fu. “Multi-Objective Optimization
of a Piezoelectric Sandwich Ultrasonic Transducer by Using Elitist Non-Dominated
Sorting Genetic Algorithm.” Key Engineering Materials 474–476 (2011): 1808–12.
https://doi.org/10.4028/www.scientific.net/KEM.474-476.1808.'
ieee: T. Hemsel, B. Fu, Y. Jing, and X. Fu, “Multi-Objective Optimization of a Piezoelectric
Sandwich Ultrasonic Transducer by Using Elitist Non-Dominated Sorting Genetic
Algorithm,” Key Engineering Materials, vol. 474–476, pp. 1808–1812, 2011.
mla: Hemsel, Tobias, et al. “Multi-Objective Optimization of a Piezoelectric Sandwich
Ultrasonic Transducer by Using Elitist Non-Dominated Sorting Genetic Algorithm.”
Key Engineering Materials, vol. 474–476, Trans Tech Publ, 2011, pp. 1808–12,
doi:10.4028/www.scientific.net/KEM.474-476.1808.
short: T. Hemsel, B. Fu, Y. Jing, X. Fu, Key Engineering Materials 474–476 (2011)
1808–1812.
date_created: 2019-05-13T10:54:42Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
doi: 10.4028/www.scientific.net/KEM.474-476.1808
language:
- iso: eng
page: 1808-1812
publication: Key Engineering Materials
publisher: Trans Tech Publ
quality_controlled: '1'
status: public
title: Multi-Objective Optimization of a Piezoelectric Sandwich Ultrasonic Transducer
by Using Elitist Non-Dominated Sorting Genetic Algorithm
type: journal_article
user_id: '55222'
volume: 474 - 476
year: '2011'
...
---
_id: '9767'
abstract:
- lang: eng
text: The paper presents the results of numerical and experimental investigation
of cylindrical piezoelectric actuator used for achieving independent three degrees
of freedom oscillations of the contact point. The design of actuator based on
a hollow piezoelectric cylinder mounted on a metal rod. The piezoceramic cylinder
has a radial polarization and special configuration of the electrodes that cover
inner and outer surface of the cylinder. The main advantage of actuator's design
is that solid metallic rod operates as a part of inner electrode of the cylinder
and a stator of actuator. The geometry of piezoelectric actuator was adopted to
reach resonance of oscillations for the first longitudinal mode and the third
flexural mode at same frequency. The actuator is designed to move positioned object
through contact point which is located on the top of the rod. The optimal topology
of electrodes was found to achieve longitudinal and flexural oscillations of the
actuator in two perpendicular planes. Three degrees of freedom of the positioning
object can be achieved and control of the system can be implemented by applying
different excitation schemes and regimes. The numerical simulation and experimental
study of piezoelectric actuator was performed. Impedance of actuator was analyzed
under different excitation regimes. The results of numerical modeling and experimental
study were compared. Recommendations for the further development of this type
of actuator are given.
author:
- first_name: Raimundas
full_name: Lucinskis, Raimundas
last_name: Lucinskis
- first_name: Dalius
full_name: Mazeika, Dalius
last_name: Mazeika
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
- first_name: Ramutis
full_name: Bansevicius, Ramutis
last_name: Bansevicius
citation:
ama: Lucinskis R, Mazeika D, Hemsel T, Bansevicius R. Multi-DOF cylindrical piezoelectric
actuator with radial polarization. AIP Conference Proceedings. 2011;1433(1):693-696.
doi:10.1063/1.3703277
apa: Lucinskis, R., Mazeika, D., Hemsel, T., & Bansevicius, R. (2011). Multi-DOF
cylindrical piezoelectric actuator with radial polarization. AIP Conference
Proceedings, 1433(1), 693–696. https://doi.org/10.1063/1.3703277
bibtex: '@article{Lucinskis_Mazeika_Hemsel_Bansevicius_2011, title={Multi-DOF cylindrical
piezoelectric actuator with radial polarization}, volume={1433}, DOI={10.1063/1.3703277},
number={1}, journal={AIP Conference Proceedings}, publisher={AIP}, author={Lucinskis,
Raimundas and Mazeika, Dalius and Hemsel, Tobias and Bansevicius, Ramutis}, year={2011},
pages={693–696} }'
chicago: 'Lucinskis, Raimundas, Dalius Mazeika, Tobias Hemsel, and Ramutis Bansevicius.
“Multi-DOF Cylindrical Piezoelectric Actuator with Radial Polarization.” AIP
Conference Proceedings 1433, no. 1 (2011): 693–96. https://doi.org/10.1063/1.3703277.'
ieee: R. Lucinskis, D. Mazeika, T. Hemsel, and R. Bansevicius, “Multi-DOF cylindrical
piezoelectric actuator with radial polarization,” AIP Conference Proceedings,
vol. 1433, no. 1, pp. 693–696, 2011.
mla: Lucinskis, Raimundas, et al. “Multi-DOF Cylindrical Piezoelectric Actuator
with Radial Polarization.” AIP Conference Proceedings, vol. 1433, no. 1,
AIP, 2011, pp. 693–96, doi:10.1063/1.3703277.
short: R. Lucinskis, D. Mazeika, T. Hemsel, R. Bansevicius, AIP Conference Proceedings
1433 (2011) 693–696.
date_created: 2019-05-13T10:56:30Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
doi: 10.1063/1.3703277
intvolume: ' 1433'
issue: '1'
keyword:
- dielectric polarisation
- piezoceramics
- piezoelectric actuators
language:
- iso: eng
page: 693-696
publication: AIP Conference Proceedings
publisher: AIP
quality_controlled: '1'
status: public
title: Multi-DOF cylindrical piezoelectric actuator with radial polarization
type: journal_article
user_id: '55222'
volume: 1433
year: '2011'
...
---
_id: '9768'
author:
- first_name: Oleg
full_name: Lurie, Oleg
last_name: Lurie
- first_name: Ivan
full_name: Kromov, Ivan
last_name: Kromov
- first_name: Ansgar
full_name: Trächtler, Ansgar
last_name: Trächtler
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Walter
full_name: Sextro, Walter
id: '21220'
last_name: Sextro
citation:
ama: 'Lurie O, Kromov I, Trächtler A, Sondermann-Wölke C, Sextro W. Dependability
Analysis of the Degradation Behavior of Mechatronics Systems with Different Operating
Strategies. In: 25. Tagung Technische Zuverlässigkeit (TTZ 2011) - Entwicklung
Und Betrieb Zuverlässiger Produkte. Leonberg; 2011:99-110.'
apa: Lurie, O., Kromov, I., Trächtler, A., Sondermann-Wölke, C., & Sextro, W.
(2011). Dependability Analysis of the Degradation Behavior of Mechatronics Systems
with Different Operating Strategies. In 25. Tagung Technische Zuverlässigkeit
(TTZ 2011) - Entwicklung und Betrieb zuverlässiger Produkte (pp. 99–110).
Leonberg.
bibtex: '@inproceedings{Lurie_Kromov_Trächtler_Sondermann-Wölke_Sextro_2011, place={Leonberg},
title={Dependability Analysis of the Degradation Behavior of Mechatronics Systems
with Different Operating Strategies}, booktitle={25. Tagung Technische Zuverlässigkeit
(TTZ 2011) - Entwicklung und Betrieb zuverlässiger Produkte}, author={Lurie, Oleg
and Kromov, Ivan and Trächtler, Ansgar and Sondermann-Wölke, Christoph and Sextro,
Walter}, year={2011}, pages={99–110} }'
chicago: Lurie, Oleg, Ivan Kromov, Ansgar Trächtler, Christoph Sondermann-Wölke,
and Walter Sextro. “Dependability Analysis of the Degradation Behavior of Mechatronics
Systems with Different Operating Strategies.” In 25. Tagung Technische Zuverlässigkeit
(TTZ 2011) - Entwicklung Und Betrieb Zuverlässiger Produkte, 99–110. Leonberg,
2011.
ieee: O. Lurie, I. Kromov, A. Trächtler, C. Sondermann-Wölke, and W. Sextro, “Dependability
Analysis of the Degradation Behavior of Mechatronics Systems with Different Operating
Strategies,” in 25. Tagung Technische Zuverlässigkeit (TTZ 2011) - Entwicklung
und Betrieb zuverlässiger Produkte, 2011, pp. 99–110.
mla: Lurie, Oleg, et al. “Dependability Analysis of the Degradation Behavior of
Mechatronics Systems with Different Operating Strategies.” 25. Tagung Technische
Zuverlässigkeit (TTZ 2011) - Entwicklung Und Betrieb Zuverlässiger Produkte,
2011, pp. 99–110.
short: 'O. Lurie, I. Kromov, A. Trächtler, C. Sondermann-Wölke, W. Sextro, in: 25.
Tagung Technische Zuverlässigkeit (TTZ 2011) - Entwicklung Und Betrieb Zuverlässiger
Produkte, Leonberg, 2011, pp. 99–110.'
date_created: 2019-05-13T10:57:24Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
language:
- iso: eng
page: 99-110
place: Leonberg
publication: 25. Tagung Technische Zuverlässigkeit (TTZ 2011) - Entwicklung und Betrieb
zuverlässiger Produkte
status: public
title: Dependability Analysis of the Degradation Behavior of Mechatronics Systems
with Different Operating Strategies
type: conference
user_id: '55222'
year: '2011'
...
---
_id: '9769'
abstract:
- lang: eng
text: In this study, we report some improvements in a hydrothermal method for lead-free
piezoelectric powders and the performance of the sintered (K$_{0.48}$Na$_{0.52}$)NbO$_{3}$
ceramics. To increase the obtained powder weight per source solution volume, the
hydrothermal reaction conditions were modified. This improvement is important
for mass production; however, it resulted in a larger particle size dispersion.
Therefore, we examined to introduced the ball milling process that is useful for
dense (K$_{0.48}$Na$_{0.52}$)NbO$_{3}$ ceramics. When a large amount of powder
was obtained, it took a long time to eliminate the residual alkaline ions in the
hydrothermal powders by a washing process. Therefore, a neutralization was conducted
in the powder washing process. Using this powder, a solid solution of (K,Na)NbO$_{3}$ceramics
was synthesized. The relative density was successfully increased. Concerning the
electrical properties, the relative permittivity was improved, and the piezoelectric
constant d$_{33}$ was also increased from 114 to 130 pC/N.
author:
- first_name: Takafumi
full_name: Maeda, Takafumi
last_name: Maeda
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
- first_name: Takeshi
full_name: Morita, Takeshi
last_name: Morita
citation:
ama: Maeda T, Hemsel T, Morita T. Improved Process for Hydrothermal Lead-Free Piezoelectric
Powders and Performances of Sintered (K0.48Na0.52)NbO3 Ceramics. Japanese Journal
of Applied Physics. 2011;50:07HC01.
apa: Maeda, T., Hemsel, T., & Morita, T. (2011). Improved Process for Hydrothermal
Lead-Free Piezoelectric Powders and Performances of Sintered (K0.48Na0.52)NbO3
Ceramics. Japanese Journal of Applied Physics, 50, 07HC01.
bibtex: '@article{Maeda_Hemsel_Morita_2011, title={Improved Process for Hydrothermal
Lead-Free Piezoelectric Powders and Performances of Sintered (K0.48Na0.52)NbO3
Ceramics}, volume={50}, journal={Japanese Journal of Applied Physics}, publisher={The
Japan Society of Applied Physics}, author={Maeda, Takafumi and Hemsel, Tobias
and Morita, Takeshi}, year={2011}, pages={07HC01} }'
chicago: 'Maeda, Takafumi, Tobias Hemsel, and Takeshi Morita. “Improved Process
for Hydrothermal Lead-Free Piezoelectric Powders and Performances of Sintered
(K0.48Na0.52)NbO3 Ceramics.” Japanese Journal of Applied Physics 50 (2011):
07HC01.'
ieee: T. Maeda, T. Hemsel, and T. Morita, “Improved Process for Hydrothermal Lead-Free
Piezoelectric Powders and Performances of Sintered (K0.48Na0.52)NbO3 Ceramics,”
Japanese Journal of Applied Physics, vol. 50, p. 07HC01, 2011.
mla: Maeda, Takafumi, et al. “Improved Process for Hydrothermal Lead-Free Piezoelectric
Powders and Performances of Sintered (K0.48Na0.52)NbO3 Ceramics.” Japanese
Journal of Applied Physics, vol. 50, The Japan Society of Applied Physics,
2011, p. 07HC01.
short: T. Maeda, T. Hemsel, T. Morita, Japanese Journal of Applied Physics 50 (2011)
07HC01.
date_created: 2019-05-13T11:00:23Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
intvolume: ' 50'
language:
- iso: eng
page: 07HC01
publication: Japanese Journal of Applied Physics
publisher: The Japan Society of Applied Physics
quality_controlled: '1'
status: public
title: Improved Process for Hydrothermal Lead-Free Piezoelectric Powders and Performances
of Sintered (K0.48Na0.52)NbO3 Ceramics
type: journal_article
user_id: '55222'
volume: 50
year: '2011'
...
---
_id: '9770'
abstract:
- lang: eng
text: One cannot image today's life without mechatronic systems, which have to be
developed in a joint effort by teams of mechanical engineers, electrical engineers,
control engineers and software engineers. Often these systems are applied in safety
critical environments like in cars or aircrafts. This requires systems that function
correctly and do not cause hazardous situations. However, random errors due to
wear or external influences cannot be completely excluded. Consequently, we have
to perform a hazard analysis for the system. Further, the union of four disciplines
in one system requires the development and analysis of the system as a whole.
We present a component-based hazard analysis that considers the entire mechatronic
system including hardware, i.e. mechanical and electrical components, and software
components. Our approach considers the physical properties of different types
of flow in mechatronic systems. We have identified reusable patterns for the failure
behavior which can be generated automatically. This reduces the effort for the
developer. As cycles, e.g. control cycles, are an internal part of every mechatronic
system our approach is able to handle cycles. The presented approach has been
applied to a real-life case study.
author:
- first_name: Claudia
full_name: Priesterjahn, Claudia
last_name: Priesterjahn
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Mathias
full_name: Tichy, Mathias
last_name: Tichy
- first_name: Christian
full_name: Hölscher, Christian
last_name: Hölscher
citation:
ama: 'Priesterjahn C, Sondermann-Wölke C, Tichy M, Hölscher C. Component-based Hazard
Analysis for Mechatronic Systems. In: Proc. of the 2nd IEEE International Workshop
MoBE-RTES at the 14th IEEE International Symposium on Object/Component/Service-Oriented
Real-Time Distributed Computing (ISORC). Newport Beach, USA (USA): IEEE Computer
Society; 2011.'
apa: 'Priesterjahn, C., Sondermann-Wölke, C., Tichy, M., & Hölscher, C. (2011).
Component-based Hazard Analysis for Mechatronic Systems. In Proc. of the 2nd
IEEE International Workshop MoBE-RTES at the 14th IEEE International Symposium
on Object/Component/Service-oriented Real-time Distributed Computing (ISORC).
Newport Beach, USA (USA): IEEE Computer Society.'
bibtex: '@inproceedings{Priesterjahn_Sondermann-Wölke_Tichy_Hölscher_2011, place={Newport
Beach, USA (USA)}, title={Component-based Hazard Analysis for Mechatronic Systems},
booktitle={Proc. of the 2nd IEEE International Workshop MoBE-RTES at the 14th
IEEE International Symposium on Object/Component/Service-oriented Real-time Distributed
Computing (ISORC)}, publisher={IEEE Computer Society}, author={Priesterjahn, Claudia
and Sondermann-Wölke, Christoph and Tichy, Mathias and Hölscher, Christian}, year={2011}
}'
chicago: 'Priesterjahn, Claudia, Christoph Sondermann-Wölke, Mathias Tichy, and
Christian Hölscher. “Component-Based Hazard Analysis for Mechatronic Systems.”
In Proc. of the 2nd IEEE International Workshop MoBE-RTES at the 14th IEEE
International Symposium on Object/Component/Service-Oriented Real-Time Distributed
Computing (ISORC). Newport Beach, USA (USA): IEEE Computer Society, 2011.'
ieee: C. Priesterjahn, C. Sondermann-Wölke, M. Tichy, and C. Hölscher, “Component-based
Hazard Analysis for Mechatronic Systems,” in Proc. of the 2nd IEEE International
Workshop MoBE-RTES at the 14th IEEE International Symposium on Object/Component/Service-oriented
Real-time Distributed Computing (ISORC), 2011.
mla: Priesterjahn, Claudia, et al. “Component-Based Hazard Analysis for Mechatronic
Systems.” Proc. of the 2nd IEEE International Workshop MoBE-RTES at the 14th
IEEE International Symposium on Object/Component/Service-Oriented Real-Time Distributed
Computing (ISORC), IEEE Computer Society, 2011.
short: 'C. Priesterjahn, C. Sondermann-Wölke, M. Tichy, C. Hölscher, in: Proc. of
the 2nd IEEE International Workshop MoBE-RTES at the 14th IEEE International Symposium
on Object/Component/Service-Oriented Real-Time Distributed Computing (ISORC),
IEEE Computer Society, Newport Beach, USA (USA), 2011.'
date_created: 2019-05-13T11:01:13Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
language:
- iso: eng
place: Newport Beach, USA (USA)
publication: Proc. of the 2nd IEEE International Workshop MoBE-RTES at the 14th IEEE
International Symposium on Object/Component/Service-oriented Real-time Distributed
Computing (ISORC)
publisher: IEEE Computer Society
quality_controlled: '1'
status: public
title: Component-based Hazard Analysis for Mechatronic Systems
type: conference
user_id: '55222'
year: '2011'
...
---
_id: '9771'
abstract:
- lang: eng
text: "Dieser Beitrag stellt ein Konzept vor, welches die Methode der Mehrzieloptimierung
mit einer Online-Bewertung des aktuellen Systemzustands kombiniert. Dieses erlaubt
Maßnahmen zur Zuverlässigkeitssteigerung abzuleiten. Das Konzept wird auf ein
X-by-wire-Fahrzeug mit Einzelradaktorik angewandt. Dabei steht zunächst die Beeinflussung
der Ziele der Mehrzieloptimierung zugunsten der Zuverlässigkeit des Systems im
Vordergrund. In Simulationen wird gezeigt, dass über die Wahl und Gewichtung der
Zielfunktionen die Quer- und Längskräfte an den Rädern vorteilhaft verteilt werden
können. \r\n\r\nIn this contribution a concept is illustrated, which combines
the multi-objective optimization technique with an online assessment of the current
system state. This allows deriving measures to increase the reliability of the
system. The concept is applied to an X-by-wire vehicle with single-wheel actuators.
The emphasis is here mostly on the influence of the objectives of the multiobjective
optimization for the benefit of the reliability of the system. It is demonstrated
in simulations, that the lateral and longitudinal forces at the wheels can be
distributed advantageously by the selection of the suitable objective functions
and the appropriate weights."
author:
- first_name: Christoph
full_name: Sondermann-Wölke, Christoph
last_name: Sondermann-Wölke
- first_name: Walter
full_name: Sextro, Walter
id: '21220'
last_name: Sextro
- first_name: Peter
full_name: Reinold, Peter
last_name: Reinold
- first_name: Ansgar
full_name: Trächtler, Ansgar
last_name: Trächtler
citation:
ama: 'Sondermann-Wölke C, Sextro W, Reinold P, Trächtler A. Zuverlässigkeitsorientierte
Mehrzieloptimierung zur Aktorrekonfiguration eines X-by-wire-Fahrzeugs. In: 25.
Tagung Technische Zuverlässigkeit (TTZ 2011) - Entwicklung Und Betrieb Zuverlässiger
Produkte. Leonberg; 2011:291-302.'
apa: Sondermann-Wölke, C., Sextro, W., Reinold, P., & Trächtler, A. (2011).
Zuverlässigkeitsorientierte Mehrzieloptimierung zur Aktorrekonfiguration eines
X-by-wire-Fahrzeugs. In 25. Tagung Technische Zuverlässigkeit (TTZ 2011) -
Entwicklung und Betrieb zuverlässiger Produkte (pp. 291–302). Leonberg.
bibtex: '@inproceedings{Sondermann-Wölke_Sextro_Reinold_Trächtler_2011, place={Leonberg},
title={Zuverlässigkeitsorientierte Mehrzieloptimierung zur Aktorrekonfiguration
eines X-by-wire-Fahrzeugs}, booktitle={25. Tagung Technische Zuverlässigkeit (TTZ
2011) - Entwicklung und Betrieb zuverlässiger Produkte}, author={Sondermann-Wölke,
Christoph and Sextro, Walter and Reinold, Peter and Trächtler, Ansgar}, year={2011},
pages={291–302} }'
chicago: Sondermann-Wölke, Christoph, Walter Sextro, Peter Reinold, and Ansgar Trächtler.
“Zuverlässigkeitsorientierte Mehrzieloptimierung Zur Aktorrekonfiguration Eines
X-by-Wire-Fahrzeugs.” In 25. Tagung Technische Zuverlässigkeit (TTZ 2011) -
Entwicklung Und Betrieb Zuverlässiger Produkte, 291–302. Leonberg, 2011.
ieee: C. Sondermann-Wölke, W. Sextro, P. Reinold, and A. Trächtler, “Zuverlässigkeitsorientierte
Mehrzieloptimierung zur Aktorrekonfiguration eines X-by-wire-Fahrzeugs,” in 25.
Tagung Technische Zuverlässigkeit (TTZ 2011) - Entwicklung und Betrieb zuverlässiger
Produkte, 2011, pp. 291–302.
mla: Sondermann-Wölke, Christoph, et al. “Zuverlässigkeitsorientierte Mehrzieloptimierung
Zur Aktorrekonfiguration Eines X-by-Wire-Fahrzeugs.” 25. Tagung Technische
Zuverlässigkeit (TTZ 2011) - Entwicklung Und Betrieb Zuverlässiger Produkte,
2011, pp. 291–302.
short: 'C. Sondermann-Wölke, W. Sextro, P. Reinold, A. Trächtler, in: 25. Tagung
Technische Zuverlässigkeit (TTZ 2011) - Entwicklung Und Betrieb Zuverlässiger
Produkte, Leonberg, 2011, pp. 291–302.'
date_created: 2019-05-13T11:04:04Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
language:
- iso: eng
page: 291-302
place: Leonberg
publication: 25. Tagung Technische Zuverlässigkeit (TTZ 2011) - Entwicklung und Betrieb
zuverlässiger Produkte
status: public
title: Zuverlässigkeitsorientierte Mehrzieloptimierung zur Aktorrekonfiguration eines
X-by-wire-Fahrzeugs
type: conference
user_id: '55222'
year: '2011'
...
---
_id: '9772'
abstract:
- lang: eng
text: 'A profound description of friction in wheel--rail contact plays an essential
role for optimization of traction control strategies, as input quantity for railway
simulations in general and for the estimation of wear and rolling contact fatigue.
A multitude of wheel--rail contact models exists, however, traction--creepage
curves obtained from measurements show quantitative and qualitative deviations.
There are several phenomena which influence the traction--creepage characteristics:
Mechanisms resulting from surface roughness, frictional heating or the presence
of interfacial fluids can have a dominating influence on friction. In this paper,
a new wheel--rail contact model, accounting for these influential parameters,
will be presented. The presented model accounts for the interaction of an interfacial
fluid model for combined boundary and mixed lubrication of rough surfaces with
a wheel--rail contact model that additionally accounts for frictional heating.
A quantitative comparison with measurements found in the literature is not conducted,
since the exact conditions of the measurements are mostly unknown and parameters
can easily be adjusted to fit the measurements. Emphasis is placed on the qualitative
behavior of the model with respect to the measurements and good agreement is found.
The dependence of the maximum traction coefficient on rolling velocity, surface
roughness and normal load is studied under dry and water lubricated conditions.'
author:
- first_name: Christoph
full_name: Tomberger, Christoph
last_name: Tomberger
- first_name: Peter
full_name: Dietmaier, Peter
last_name: Dietmaier
- first_name: Walter
full_name: Sextro, Walter
id: '21220'
last_name: Sextro
- first_name: Klaus
full_name: Six, Klaus
last_name: Six
citation:
ama: 'Tomberger C, Dietmaier P, Sextro W, Six K. Friction in wheel--rail contact:
A model comprising interfacial fluids, surface roughness and temperature. Wear.
2011;271:2-12. doi:10.1016/j.wear.2010.10.025'
apa: 'Tomberger, C., Dietmaier, P., Sextro, W., & Six, K. (2011). Friction in
wheel--rail contact: A model comprising interfacial fluids, surface roughness
and temperature. Wear, 271, 2–12. https://doi.org/10.1016/j.wear.2010.10.025'
bibtex: '@article{Tomberger_Dietmaier_Sextro_Six_2011, title={Friction in wheel--rail
contact: A model comprising interfacial fluids, surface roughness and temperature},
volume={271}, DOI={10.1016/j.wear.2010.10.025},
journal={Wear}, author={Tomberger, Christoph and Dietmaier, Peter and Sextro,
Walter and Six, Klaus}, year={2011}, pages={2–12} }'
chicago: 'Tomberger, Christoph, Peter Dietmaier, Walter Sextro, and Klaus Six. “Friction
in Wheel--Rail Contact: A Model Comprising Interfacial Fluids, Surface Roughness
and Temperature.” Wear 271 (2011): 2–12. https://doi.org/10.1016/j.wear.2010.10.025.'
ieee: 'C. Tomberger, P. Dietmaier, W. Sextro, and K. Six, “Friction in wheel--rail
contact: A model comprising interfacial fluids, surface roughness and temperature,”
Wear, vol. 271, pp. 2–12, 2011.'
mla: 'Tomberger, Christoph, et al. “Friction in Wheel--Rail Contact: A Model Comprising
Interfacial Fluids, Surface Roughness and Temperature.” Wear, vol. 271,
2011, pp. 2–12, doi:10.1016/j.wear.2010.10.025.'
short: C. Tomberger, P. Dietmaier, W. Sextro, K. Six, Wear 271 (2011) 2–12.
date_created: 2019-05-13T11:08:32Z
date_updated: 2022-01-06T07:04:19Z
department:
- _id: '151'
doi: 10.1016/j.wear.2010.10.025
intvolume: ' 271'
keyword:
- Wheel--rail contact
- Rolling contact
- Friction
- Interfacial fluid
- Lubrication
- Surface roughness
- Contact temperature
language:
- iso: eng
page: 2 - 12
publication: Wear
publication_identifier:
issn:
- 0043-1648
quality_controlled: '1'
status: public
title: 'Friction in wheel--rail contact: A model comprising interfacial fluids, surface
roughness and temperature'
type: journal_article
user_id: '55222'
volume: 271
year: '2011'
...
---
_id: '9877'
author:
- first_name: Gaku
full_name: Isobe, Gaku
last_name: Isobe
- first_name: Peter
full_name: Bornmann, Peter
last_name: Bornmann
- first_name: Tobias
full_name: Hemsel, Tobias
id: '210'
last_name: Hemsel
- first_name: Takeshi
full_name: Morita, Takeshi
last_name: Morita
citation:
ama: Isobe G, Bornmann P, Hemsel T, Morita T. High temperature tolerant transducer
for Ultrasonic Assisted Hydrothermal Method. Proceedings of Symposium on Ultrasonic
Electronics. 2011;32:19-20.
apa: Isobe, G., Bornmann, P., Hemsel, T., & Morita, T. (2011). High temperature
tolerant transducer for Ultrasonic Assisted Hydrothermal Method. Proceedings
of Symposium on Ultrasonic Electronics, 32, 19–20.
bibtex: '@article{Isobe_Bornmann_Hemsel_Morita_2011, title={High temperature tolerant
transducer for Ultrasonic Assisted Hydrothermal Method}, volume={32}, journal={Proceedings
of Symposium on Ultrasonic Electronics}, publisher={Trans Tech Publ}, author={Isobe,
Gaku and Bornmann, Peter and Hemsel, Tobias and Morita, Takeshi}, year={2011},
pages={19–20} }'
chicago: 'Isobe, Gaku, Peter Bornmann, Tobias Hemsel, and Takeshi Morita. “High
Temperature Tolerant Transducer for Ultrasonic Assisted Hydrothermal Method.”
Proceedings of Symposium on Ultrasonic Electronics 32 (2011): 19–20.'
ieee: G. Isobe, P. Bornmann, T. Hemsel, and T. Morita, “High temperature tolerant
transducer for Ultrasonic Assisted Hydrothermal Method,” Proceedings of Symposium
on Ultrasonic Electronics, vol. 32, pp. 19–20, 2011.
mla: Isobe, Gaku, et al. “High Temperature Tolerant Transducer for Ultrasonic Assisted
Hydrothermal Method.” Proceedings of Symposium on Ultrasonic Electronics,
vol. 32, Trans Tech Publ, 2011, pp. 19–20.
short: G. Isobe, P. Bornmann, T. Hemsel, T. Morita, Proceedings of Symposium on
Ultrasonic Electronics 32 (2011) 19–20.
date_created: 2019-05-20T13:09:04Z
date_updated: 2019-09-16T11:31:38Z
department:
- _id: '151'
intvolume: ' 32'
language:
- iso: eng
page: 19-20
publication: Proceedings of Symposium on Ultrasonic Electronics
publisher: Trans Tech Publ
quality_controlled: '1'
status: public
title: High temperature tolerant transducer for Ultrasonic Assisted Hydrothermal Method
type: journal_article
user_id: '55222'
volume: 32
year: '2011'
...
---
_id: '9918'
citation:
ama: 'Tönnies M, Flotmann C, eds. Narrative in Drama. Trier: WVT; 2011.'
apa: 'Tönnies, M., & Flotmann, C. (Eds.). (2011). Narrative in Drama.
Trier: WVT.'
bibtex: '@book{Tönnies_Flotmann_2011, place={Trier}, title={Narrative in Drama},
publisher={WVT}, year={2011} }'
chicago: 'Tönnies, Merle, and Christina Flotmann, eds. Narrative in Drama.
Trier: WVT, 2011.'
ieee: 'M. Tönnies and C. Flotmann, Eds., Narrative in Drama. Trier: WVT,
2011.'
mla: Tönnies, Merle, and Christina Flotmann, editors. Narrative in Drama.
WVT, 2011.
short: M. Tönnies, C. Flotmann, eds., Narrative in Drama, WVT, Trier, 2011.
date_created: 2019-05-22T11:18:02Z
date_updated: 2019-05-22T11:18:22Z
department:
- _id: '36'
- _id: '1'
- _id: '380'
editor:
- first_name: Merle
full_name: Tönnies, Merle
id: '555'
last_name: Tönnies
- first_name: Christina
full_name: Flotmann, Christina
id: '8736'
last_name: Flotmann
language:
- iso: eng
place: Trier
publication_status: published
publisher: WVT
status: public
title: Narrative in Drama
type: book_editor
user_id: '32277'
year: '2011'
...
---
_id: '4140'
abstract:
- lang: eng
text: "In this paper we report on the successful reduction of tensile strain in
a thin strained ion-beam\r\nsynthesized 3C-SiC(1 1 1) layer on silicon. The creation
of a near-interface defect structure consisting\r\nof nanometric voids and stacking
fault type defects by He ion implantation and subsequent annealing\r\nyields significant
relaxation in the top SiC film. The microstructure of the defect layer is studied
by transmission electron microscopy, and the strain state of the 3C-SiC layer
was studied by high-resolution X-ray diffraction in a parallel beam configuration.
Typical process conditions for the growth of GaN films on the SiC layer were emulated
by high temperature treatments in a rapid thermal annealer or a quartz tube furnace.
It is found that prolonged annealing at high temperatures leads to ripening of
the voids and to a weaker reduction of the tensile strain. It is shown that this
problem can be overcome by the co-implantation of oxygen ions to form highly thermally
stable void/extended defect structures."
article_type: original
author:
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: B.
full_name: Murphy, B.
last_name: Murphy
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: 'Häberlen M, Murphy B, Stritzker B, Lindner J. Relaxation of a strained 3C-SiC(111)
thin film on silicon by He+ and O+ ion beam defect engineering. Nuclear Instruments
and Methods in Physics Research Section B: Beam Interactions with Materials and
Atoms. 2011;272:322-325. doi:10.1016/j.nimb.2011.01.092'
apa: 'Häberlen, M., Murphy, B., Stritzker, B., & Lindner, J. (2011). Relaxation
of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms, 272, 322–325. https://doi.org/10.1016/j.nimb.2011.01.092'
bibtex: '@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Relaxation of a
strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering},
volume={272}, DOI={10.1016/j.nimb.2011.01.092},
journal={Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms}, publisher={Elsevier BV}, author={Häberlen, M. and Murphy,
B. and Stritzker, B. and Lindner, Jörg}, year={2011}, pages={322–325} }'
chicago: 'Häberlen, M., B. Murphy, B. Stritzker, and Jörg Lindner. “Relaxation of
a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Beam Defect Engineering.”
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions
with Materials and Atoms 272 (2011): 322–25. https://doi.org/10.1016/j.nimb.2011.01.092.'
ieee: 'M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Relaxation of a strained
3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering,” Nuclear
Instruments and Methods in Physics Research Section B: Beam Interactions with
Materials and Atoms, vol. 272, pp. 322–325, 2011.'
mla: 'Häberlen, M., et al. “Relaxation of a Strained 3C-SiC(111) Thin Film on Silicon
by He+ and O+ Ion Beam Defect Engineering.” Nuclear Instruments and Methods
in Physics Research Section B: Beam Interactions with Materials and Atoms,
vol. 272, Elsevier BV, 2011, pp. 322–25, doi:10.1016/j.nimb.2011.01.092.'
short: 'M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and
Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
272 (2011) 322–325.'
date_created: 2018-08-27T12:27:23Z
date_updated: 2022-01-06T07:00:23Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.nimb.2011.01.092
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:29:34Z
date_updated: 2018-08-27T12:29:34Z
file_id: '4141'
file_name: Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and
O+ ion beam defect engineering.pdf
file_size: 772335
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:29:34Z
has_accepted_license: '1'
intvolume: ' 272'
language:
- iso: eng
page: 322-325
publication: 'Nuclear Instruments and Methods in Physics Research Section B: Beam
Interactions with Materials and Atoms'
publication_identifier:
issn:
- 0168-583X
publication_status: published
publisher: Elsevier BV
status: public
title: Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion
beam defect engineering
type: journal_article
user_id: '55706'
volume: 272
year: '2011'
...
---
_id: '4142'
abstract:
- lang: eng
text: This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized
3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a
near-interface defect structure containing nanometric voids and dislocation loops
by the implantation of He ions and subsequent thermal annealing. The structural
features of this defect microstructure are investigated by transmission electron
microscopy. High-resolution X-ray diffraction in a parallel beam configuration
is used to quantify the strain state of the top SiC layer. Further annealing experiments
were carried out in order to emulate typical process conditions for the growth
of wide-bandgap semiconductors like, for example GaN. It is found that prolonged
annealing at elevated temperatures leads to coarsening of the voids and to a much
less efficient strain reduction. We show that this issue can be resolved by the
co-implantation of oxygen to form highly thermally stable cavity/extended defect
structures. The technique presented here may be useful for a variety of other
thermally mismatched bulk/thin film couples as well.
article_type: original
author:
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Brian
full_name: Murphy, Brian
last_name: Murphy
- first_name: Bernd
full_name: Stritzker, Bernd
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Häberlen M, Murphy B, Stritzker B, Lindner J. Decoupling of a strained 3C-SiC(111)
thin film on silicon by He+ and O+ ion implantation. physica status solidi
(c). 2011;8(3):944-947. doi:10.1002/pssc.201000342
apa: Häberlen, M., Murphy, B., Stritzker, B., & Lindner, J. (2011). Decoupling
of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation.
Physica Status Solidi (C), 8(3), 944–947. https://doi.org/10.1002/pssc.201000342
bibtex: '@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Decoupling of a
strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation}, volume={8},
DOI={10.1002/pssc.201000342},
number={3}, journal={physica status solidi (c)}, publisher={Wiley}, author={Häberlen,
Maik and Murphy, Brian and Stritzker, Bernd and Lindner, Jörg}, year={2011}, pages={944–947}
}'
chicago: 'Häberlen, Maik, Brian Murphy, Bernd Stritzker, and Jörg Lindner. “Decoupling
of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.”
Physica Status Solidi (C) 8, no. 3 (2011): 944–47. https://doi.org/10.1002/pssc.201000342.'
ieee: M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Decoupling of a strained
3C-SiC(111) thin film on silicon by He+ and O+ ion implantation,” physica status
solidi (c), vol. 8, no. 3, pp. 944–947, 2011.
mla: Häberlen, Maik, et al. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon
by He+ and O+ Ion Implantation.” Physica Status Solidi (C), vol. 8, no.
3, Wiley, 2011, pp. 944–47, doi:10.1002/pssc.201000342.
short: M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C)
8 (2011) 944–947.
date_created: 2018-08-27T12:31:20Z
date_updated: 2022-01-06T07:00:24Z
ddc:
- '530'
department:
- _id: '286'
doi: 10.1002/pssc.201000342
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:32:07Z
date_updated: 2018-08-27T12:32:07Z
file_id: '4143'
file_name: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and
O+ ion implantation.pdf
file_size: 152623
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:32:07Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '3'
language:
- iso: eng
page: 944-947
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion
implantation
type: journal_article
user_id: '55706'
volume: 8
year: '2011'
...
---
_id: '4148'
abstract:
- lang: eng
text: Photoluminescence spectra of Sm^(2+)-doped BaBr^2 have been measured under
hydrostatic pressures up to 17 GPa at room temperature. In the low pressure range
a red-shift of the broad 5d–4f transition of -145 cm^(-1)/GPa is observed. From
5 to 8 GPa a phase mixtureof the initial orthorhombic phase and the high-pressure
monoclinic phase gives rise to two 5d–4f bands, which are strongly overlapping.
Above 8 GPa the crystalis completely transformed to its high-pressure phase where
two different Sm2^(2+) sites exist, but only one broad 5d–4f transition is detected.
It exhibits are d-shift of -36 cm^(-1)/GPa. In addition,the line shifts of the
(_^5)D_0→(_^7)F_J (J=0,1,2) transitions are investigated. Linear shifts of
-19cm^(-1)/GPa for J=0,2 and of -13cm^(-1)/GPa for J01 are observed in the pressure
range from 0 to 5 GPa.
article_type: original
author:
- first_name: Marie Christin
full_name: Wiegand, Marie Christin
last_name: Wiegand
- first_name: Werner
full_name: Sievers, Werner
last_name: Sievers
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Th.
full_name: Tröster, Th.
last_name: Tröster
- first_name: S.
full_name: Schweizer, S.
last_name: Schweizer
citation:
ama: Wiegand MC, Sievers W, Lindner J, Tröster T, Schweizer S. Photoluminescence
properties of Sm2+-doped BaBr2 under hydrostatic pressure. Journal of Luminescence.
2011;131(11):2400-2403. doi:10.1016/j.jlumin.2011.05.035
apa: Wiegand, M. C., Sievers, W., Lindner, J., Tröster, T., & Schweizer, S.
(2011). Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure.
Journal of Luminescence, 131(11), 2400–2403. https://doi.org/10.1016/j.jlumin.2011.05.035
bibtex: '@article{Wiegand_Sievers_Lindner_Tröster_Schweizer_2011, title={Photoluminescence
properties of Sm2+-doped BaBr2 under hydrostatic pressure}, volume={131}, DOI={10.1016/j.jlumin.2011.05.035},
number={11}, journal={Journal of Luminescence}, publisher={Elsevier BV}, author={Wiegand,
Marie Christin and Sievers, Werner and Lindner, Jörg and Tröster, Th. and Schweizer,
S.}, year={2011}, pages={2400–2403} }'
chicago: 'Wiegand, Marie Christin, Werner Sievers, Jörg Lindner, Th. Tröster, and
S. Schweizer. “Photoluminescence Properties of Sm2+-Doped BaBr2 under Hydrostatic
Pressure.” Journal of Luminescence 131, no. 11 (2011): 2400–2403. https://doi.org/10.1016/j.jlumin.2011.05.035.'
ieee: M. C. Wiegand, W. Sievers, J. Lindner, T. Tröster, and S. Schweizer, “Photoluminescence
properties of Sm2+-doped BaBr2 under hydrostatic pressure,” Journal of Luminescence,
vol. 131, no. 11, pp. 2400–2403, 2011.
mla: Wiegand, Marie Christin, et al. “Photoluminescence Properties of Sm2+-Doped
BaBr2 under Hydrostatic Pressure.” Journal of Luminescence, vol. 131, no.
11, Elsevier BV, 2011, pp. 2400–03, doi:10.1016/j.jlumin.2011.05.035.
short: M.C. Wiegand, W. Sievers, J. Lindner, T. Tröster, S. Schweizer, Journal of
Luminescence 131 (2011) 2400–2403.
date_created: 2018-08-27T12:44:42Z
date_updated: 2022-01-06T07:00:25Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1016/j.jlumin.2011.05.035
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:45:30Z
date_updated: 2018-08-27T12:45:30Z
file_id: '4149'
file_name: Photoluminescence properties of Sm(2+)-doped BaBr2 under hydrostatic
pressure.pdf
file_size: 279989
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:45:30Z
has_accepted_license: '1'
intvolume: ' 131'
issue: '11'
language:
- iso: eng
page: 2400-2403
publication: Journal of Luminescence
publication_identifier:
issn:
- 0022-2313
publication_status: published
publisher: Elsevier BV
status: public
title: Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure
type: journal_article
user_id: '55706'
volume: 131
year: '2011'
...
---
_id: '4150'
abstract:
- lang: eng
text: "Atomistic simulations on the silicon carbide precipitation in bulk silicon
employing both, classical potential and\r\nfirst-principlesmethods are presented.
The calculations aim at a comprehensive,microscopic understanding of the\r\nprecipitation
mechanism in the context of controversial discussions in the literature. For the
quantum-mechanical\r\ntreatment, basic processes assumed in the precipitation
process are calculated in feasible systems of small\r\nsize. The migration mechanism
of a carbon \x02100\x03 interstitial and silicon \x0211 0\x03 self-interstitial
in otherwise\r\ndefect-free silicon are investigated using density functional
theory calculations. The influence of a nearby\r\nvacancy, another carbon interstitial
and a substitutional defect as well as a silicon self-interstitial has been\r\ninvestigated
systematically. Interactions of various combinations of defects have been characterized
including a\r\ncouple of selected migration pathways within these configurations.
Most of the investigated pairs of defects tend\r\nto agglomerate allowing for
a reduction in strain. The formation of structures involving strong carbon–carbon\r\nbonds
turns out to be very unlikely. In contrast, substitutional carbon occurs in all
probability. A long range\r\ncapture radius has been observed for pairs of interstitial
carbon as well as interstitial carbon and vacancies. A\r\nrather small capture
radius is predicted for substitutional carbon and silicon self-interstitials.
Initial assumptions\r\nregarding the precipitation mechanism of silicon carbide
in bulk silicon are established and conformability to\r\nexperimental findings
is discussed. Furthermore, results of the accurate first-principles calculations
on defects\r\nand carbon diffusion in silicon are compared to results of classical
potential simulations revealing significant\r\nlimitations of the latter method.
An approach to work around this problem is proposed. Finally, results of the\r\nclassical
potential molecular dynamics simulations of large systems are examined, which
reinforce previous\r\nassumptions and give further insight into basic processes
involved in the silicon carbide transition."
article_number: '064126'
article_type: original
author:
- first_name: F.
full_name: Zirkelbach, F.
last_name: Zirkelbach
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: K.
full_name: Nordlund, K.
last_name: Nordlund
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: W. G.
full_name: Schmidt, W. G.
last_name: Schmidt
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
citation:
ama: Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Combinedab
initioand classical potential simulation study on silicon carbide precipitation
in silicon. Physical Review B. 2011;84(6). doi:10.1103/physrevb.84.064126
apa: Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &
Rauls, E. (2011). Combinedab initioand classical potential simulation study on
silicon carbide precipitation in silicon. Physical Review B, 84(6).
https://doi.org/10.1103/physrevb.84.064126
bibtex: '@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combinedab
initioand classical potential simulation study on silicon carbide precipitation
in silicon}, volume={84}, DOI={10.1103/physrevb.84.064126},
number={6064126}, journal={Physical Review B}, publisher={American Physical Society
(APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner,
Jörg and Schmidt, W. G. and Rauls, E.}, year={2011} }'
chicago: Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt,
and E. Rauls. “Combinedab Initioand Classical Potential Simulation Study on Silicon
Carbide Precipitation in Silicon.” Physical Review B 84, no. 6 (2011).
https://doi.org/10.1103/physrevb.84.064126.
ieee: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E.
Rauls, “Combinedab initioand classical potential simulation study on silicon carbide
precipitation in silicon,” Physical Review B, vol. 84, no. 6, 2011.
mla: Zirkelbach, F., et al. “Combinedab Initioand Classical Potential Simulation
Study on Silicon Carbide Precipitation in Silicon.” Physical Review B,
vol. 84, no. 6, 064126, American Physical Society (APS), 2011, doi:10.1103/physrevb.84.064126.
short: F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls,
Physical Review B 84 (2011).
date_created: 2018-08-27T13:17:45Z
date_updated: 2022-01-06T07:00:26Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1103/physrevb.84.064126
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T13:18:53Z
date_updated: 2018-08-27T13:18:53Z
file_id: '4151'
file_name: Combined ab initio and classical potential simulation study on silicon
carbide precipitation in silicon.pdf
file_size: 1541698
relation: main_file
success: 1
file_date_updated: 2018-08-27T13:18:53Z
has_accepted_license: '1'
intvolume: ' 84'
issue: '6'
language:
- iso: eng
publication: Physical Review B
publication_identifier:
issn:
- 1098-0121
- 1550-235X
publication_status: published
publisher: American Physical Society (APS)
status: public
title: Combinedab initioand classical potential simulation study on silicon carbide
precipitation in silicon
type: journal_article
user_id: '55706'
volume: 84
year: '2011'
...
---
_id: '4157'
author:
- first_name: Burkhard
full_name: Hehenkamp, Burkhard
id: '37339'
last_name: Hehenkamp
- first_name: Oddvar
full_name: Kaarboe, Oddvar
last_name: Kaarboe
citation:
ama: Hehenkamp B, Kaarboe O. Paying for Performance in Hospitals. Economic Analysis
and Policy. 2011;41(1):49-70. doi:10.1016/s0313-5926(11)50004-9
apa: Hehenkamp, B., & Kaarboe, O. (2011). Paying for Performance in Hospitals.
Economic Analysis and Policy, 41(1), 49–70. https://doi.org/10.1016/s0313-5926(11)50004-9
bibtex: '@article{Hehenkamp_Kaarboe_2011, title={Paying for Performance in Hospitals},
volume={41}, DOI={10.1016/s0313-5926(11)50004-9},
number={1}, journal={Economic Analysis and Policy}, publisher={Elsevier BV}, author={Hehenkamp,
Burkhard and Kaarboe, Oddvar}, year={2011}, pages={49–70} }'
chicago: 'Hehenkamp, Burkhard, and Oddvar Kaarboe. “Paying for Performance in Hospitals.”
Economic Analysis and Policy 41, no. 1 (2011): 49–70. https://doi.org/10.1016/s0313-5926(11)50004-9.'
ieee: B. Hehenkamp and O. Kaarboe, “Paying for Performance in Hospitals,” Economic
Analysis and Policy, vol. 41, no. 1, pp. 49–70, 2011.
mla: Hehenkamp, Burkhard, and Oddvar Kaarboe. “Paying for Performance in Hospitals.”
Economic Analysis and Policy, vol. 41, no. 1, Elsevier BV, 2011, pp. 49–70,
doi:10.1016/s0313-5926(11)50004-9.
short: B. Hehenkamp, O. Kaarboe, Economic Analysis and Policy 41 (2011) 49–70.
date_created: 2018-08-27T15:08:06Z
date_updated: 2022-01-06T07:00:26Z
department:
- _id: '280'
- _id: '475'
doi: 10.1016/s0313-5926(11)50004-9
extern: '1'
intvolume: ' 41'
issue: '1'
page: 49-70
publication: Economic Analysis and Policy
publication_identifier:
issn:
- 0313-5926
publication_status: published
publisher: Elsevier BV
status: public
title: Paying for Performance in Hospitals
type: journal_article
user_id: '37339'
volume: 41
year: '2011'
...
---
_id: '4171'
abstract:
- lang: eng
text: The method involves exciting a quantum system with photons in a polarization
state. Two states of the quantum system are excited with linear horizontal and
vertical polarizations that are orthogonal to each other, where the states exhibit
an energetic gap smaller than energetic bandwidth of photons. The states are assigned
based on the polarizations, where the quantum system is arranged in a superposition
state. The quantum system is formed by a quantum bit that is formed as a two-level
system.
- lang: eng
text: Die Erfindung betrifft ein Verfahren zur Übertragung des Polarisationszustandes
von Photonen in ein stationäres System, bei dem mit Photonen eines Polarisationszustandes
ein Quanten-System angeregt wird, das zwei Zustände aufweist, die mit zueinander
orthogonalen Polarisationen anregbar sind und deren energetischer Abstand kleiner
ist als die energetische Bandbreite der Photonen, wobei beide Zustände in Abhängigkeit
von der Polarisation besetzt werden und das Quantensystem einen Superpositionszustand
beider Zustände einnimmt.
application_date: 2010-05-18
application_number: '102010020817'
author:
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: D.
full_name: Mantei, D.
last_name: Mantei
- first_name: 'S. Michaelis '
full_name: 'de Vasconcellos, S. Michaelis '
last_name: de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Förstner J, Mantei D, de Vasconcellos SM, Zrenner A. Method for transmission
of information about polarization state of photons to stationary system. 2011.
apa: Förstner, J., Mantei, D., de Vasconcellos, S. M., & Zrenner, A. (2011).
Method for transmission of information about polarization state of photons to
stationary system.
bibtex: '@article{Förstner_Mantei_de Vasconcellos_Zrenner_2011, title={Method for
transmission of information about polarization state of photons to stationary
system}, author={Förstner, Jens and Mantei, D. and de Vasconcellos, S. Michaelis and
Zrenner, Artur}, year={2011} }'
chicago: Förstner, Jens, D. Mantei, S. Michaelis de Vasconcellos, and Artur Zrenner.
“Method for Transmission of Information about Polarization State of Photons to
Stationary System,” 2011.
ieee: J. Förstner, D. Mantei, S. M. de Vasconcellos, and A. Zrenner, “Method for
transmission of information about polarization state of photons to stationary
system.” 2011.
mla: Förstner, Jens, et al. Method for Transmission of Information about Polarization
State of Photons to Stationary System. 2011.
short: J. Förstner, D. Mantei, S.M. de Vasconcellos, A. Zrenner, (2011).
date_created: 2018-08-28T08:46:40Z
date_updated: 2022-01-06T07:00:28Z
department:
- _id: '15'
- _id: '290'
ipc: G01J 4/00
ipn: DE102010020817A1
keyword:
- tet_topic_qd
main_file_link:
- url: https://patents.google.com/patent/DE102010020817A1/en
publication_date: 2011-11-24
status: public
title: Method for transmission of information about polarization state of photons
to stationary system
type: patent
user_id: '158'
year: '2011'
...
---
_id: '4377'
abstract:
- lang: eng
text: Confocal Raman spectroscopy was performed as an archetype imaging method to
study the ferroelectric domain structure of periodically poled lithium niobate.
More precisely, the linkage out of spatial resolution and spectral information
proved itself as very useful. Here a specific modulation of the Raman lines by
the local variation of polarity and a non-symmetric measuring-signal across the
domain structure were found, which allows for imaging of domain boundaries as
well as oppositely orientated domains. The high potential of this method is demonstrated
by the visualization of the ferroelectric domain structures based on various phonon
modes.
article_type: original
author:
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Wjatscheslaw
full_name: Hahn, Wjatscheslaw
last_name: Hahn
- first_name: Volker
full_name: Wiedemeier, Volker
last_name: Wiedemeier
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Simone
full_name: Sanna, Simone
last_name: Sanna
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
last_name: Schmidt
citation:
ama: Berth G, Hahn W, Wiedemeier V, Zrenner A, Sanna S, Schmidt WG. Imaging of the
Ferroelectric Domain Structures by Confocal Raman Spectroscopy. Ferroelectrics.
2011;420(1):44-48. doi:10.1080/00150193.2011.594774
apa: Berth, G., Hahn, W., Wiedemeier, V., Zrenner, A., Sanna, S., & Schmidt,
W. G. (2011). Imaging of the Ferroelectric Domain Structures by Confocal Raman
Spectroscopy. Ferroelectrics, 420(1), 44–48. https://doi.org/10.1080/00150193.2011.594774
bibtex: '@article{Berth_Hahn_Wiedemeier_Zrenner_Sanna_Schmidt_2011, title={Imaging
of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy}, volume={420},
DOI={10.1080/00150193.2011.594774},
number={1}, journal={Ferroelectrics}, publisher={Informa UK Limited}, author={Berth,
Gerhard and Hahn, Wjatscheslaw and Wiedemeier, Volker and Zrenner, Artur and Sanna,
Simone and Schmidt, Wolf Gero}, year={2011}, pages={44–48} }'
chicago: 'Berth, Gerhard, Wjatscheslaw Hahn, Volker Wiedemeier, Artur Zrenner, Simone
Sanna, and Wolf Gero Schmidt. “Imaging of the Ferroelectric Domain Structures
by Confocal Raman Spectroscopy.” Ferroelectrics 420, no. 1 (2011): 44–48.
https://doi.org/10.1080/00150193.2011.594774.'
ieee: G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, and W. G. Schmidt,
“Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy,”
Ferroelectrics, vol. 420, no. 1, pp. 44–48, 2011.
mla: Berth, Gerhard, et al. “Imaging of the Ferroelectric Domain Structures by Confocal
Raman Spectroscopy.” Ferroelectrics, vol. 420, no. 1, Informa UK Limited,
2011, pp. 44–48, doi:10.1080/00150193.2011.594774.
short: G. Berth, W. Hahn, V. Wiedemeier, A. Zrenner, S. Sanna, W.G. Schmidt, Ferroelectrics
420 (2011) 44–48.
date_created: 2018-09-11T14:10:35Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1080/00150193.2011.594774
intvolume: ' 420'
issue: '1'
keyword:
- Raman spectroscopy
- ferroelectric domains
- LiNbO3
- confocal imaging
language:
- iso: eng
page: 44-48
publication: Ferroelectrics
publication_identifier:
issn:
- 0015-0193
- 1563-5112
publication_status: published
publisher: Informa UK Limited
status: public
title: Imaging of the Ferroelectric Domain Structures by Confocal Raman Spectroscopy
type: journal_article
user_id: '49428'
volume: 420
year: '2011'
...
---
_id: '4378'
abstract:
- lang: eng
text: Using a combined all-ultra-high-vacuum process employing lateral patterning
with focused ion beams and molecular beam epitaxy, site-selective growth of single
(In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally
positioned quantum dots in the intrinsic region of a p-i-n junction so that the
quantum dots can be driven electrically. In this contribution, we will present
our results on the morphological properties of the ion-beam modified surface on
which the quantum dot nucleation occurs together with a characterization of the
electrical and optoelectronic properties. We will demonstrate that a single, individual
quantum dot can directly be electrically addressed.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. Electrically driven intentionally positioned single quantum dot. physica
status solidi (c). 2011;8(4):1182-1185. doi:10.1002/pssc.201000828
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2011). Electrically driven intentionally positioned single
quantum dot. Physica Status Solidi (C), 8(4), 1182–1185. https://doi.org/10.1002/pssc.201000828
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2011,
title={Electrically driven intentionally positioned single quantum dot}, volume={8},
DOI={10.1002/pssc.201000828},
number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mehta,
Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos,
Steffen and Zrenner, Artur and Meier, Cedrik}, year={2011}, pages={1182–1185}
}'
chicago: 'Mehta, Minisha, Dirk Reuter, Andreas D. Wieck, Steffen Michaelis de Vasconcellos,
Artur Zrenner, and Cedrik Meier. “Electrically Driven Intentionally Positioned
Single Quantum Dot.” Physica Status Solidi (C) 8, no. 4 (2011): 1182–85.
https://doi.org/10.1002/pssc.201000828.'
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “Electrically driven intentionally positioned single quantum dot,”
physica status solidi (c), vol. 8, no. 4, pp. 1182–1185, 2011.
mla: Mehta, Minisha, et al. “Electrically Driven Intentionally Positioned Single
Quantum Dot.” Physica Status Solidi (C), vol. 8, no. 4, Wiley, 2011, pp.
1182–85, doi:10.1002/pssc.201000828.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Physica Status Solidi (C) 8 (2011) 1182–1185.
date_created: 2018-09-11T14:15:28Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1002/pssc.201000828
intvolume: ' 8'
issue: '4'
keyword:
- molecular beam epitaxy
- quantum dot
- site control
- electroluminescence
language:
- iso: eng
page: 1182-1185
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Electrically driven intentionally positioned single quantum dot
type: journal_article
user_id: '20798'
volume: 8
year: '2011'
...
---
_id: '4379'
abstract:
- lang: eng
text: Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers
with an off orientation of 6º towards < 111> by means of electrochemical etching
in ethanoic-based HF electrolytes. These substrates are of interest for the epitaxial
growth of III–V compound semiconductor stacks on their top for the production
of multi-junction solar cells and very thin electronic devices. We demonstrate
transfer of porous layers after an annealing process in hydrogen atmosphere. Electron
Back-Scatter Diffraction analysis confirms that the substrate orientation is conserved
during the etching and annealing steps. Confocal μ-Raman spectroscopy analysis
shows a decrease in the Raman signal intensity after etching and a subsequent
increase after annealing while no shift is observed. By means of Atomic Force
Microscopy, analysis the surface appearance after the etching and annealing steps
can be visualized. The mean surface roughness varies during the process from 0.55
nm for the unprocessed wafers to 0.27 nm after etching and 0.78 nm after annealing.
The decrease of average roughness after etching is caused by an electropolishing
step prior to porous formation. Despite of slight increase of mean surface roughness
after annealing the samples are still appropriate for high quality epitaxial growth
and subsequent lift-off.
article_type: original
author:
- first_name: E.
full_name: Garralaga Rojas, E.
last_name: Garralaga Rojas
- first_name: B.
full_name: Terheiden, B.
last_name: Terheiden
- first_name: H.
full_name: Plagwitz, H.
last_name: Plagwitz
- first_name: J.
full_name: Hensen, J.
last_name: Hensen
- first_name: V.
full_name: Wiedemeier, V.
last_name: Wiedemeier
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: R.
full_name: Brendel, R.
last_name: Brendel
citation:
ama: Garralaga Rojas E, Terheiden B, Plagwitz H, et al. Lift-off of mesoporous layers
by electrochemical etching on Si (100) substrates with miscut of 6° off towards
(111). Thin Solid Films. 2011;520(1):606-609. doi:10.1016/j.tsf.2011.07.063
apa: Garralaga Rojas, E., Terheiden, B., Plagwitz, H., Hensen, J., Wiedemeier, V.,
Berth, G., … Brendel, R. (2011). Lift-off of mesoporous layers by electrochemical
etching on Si (100) substrates with miscut of 6° off towards (111). Thin Solid
Films, 520(1), 606–609. https://doi.org/10.1016/j.tsf.2011.07.063
bibtex: '@article{Garralaga Rojas_Terheiden_Plagwitz_Hensen_Wiedemeier_Berth_Zrenner_Brendel_2011,
title={Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates
with miscut of 6° off towards (111)}, volume={520}, DOI={10.1016/j.tsf.2011.07.063},
number={1}, journal={Thin Solid Films}, publisher={Elsevier BV}, author={Garralaga
Rojas, E. and Terheiden, B. and Plagwitz, H. and Hensen, J. and Wiedemeier, V.
and Berth, Gerhard and Zrenner, Artur and Brendel, R.}, year={2011}, pages={606–609}
}'
chicago: 'Garralaga Rojas, E., B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier,
Gerhard Berth, Artur Zrenner, and R. Brendel. “Lift-off of Mesoporous Layers by
Electrochemical Etching on Si (100) Substrates with Miscut of 6° off towards (111).”
Thin Solid Films 520, no. 1 (2011): 606–9. https://doi.org/10.1016/j.tsf.2011.07.063.'
ieee: E. Garralaga Rojas et al., “Lift-off of mesoporous layers by electrochemical
etching on Si (100) substrates with miscut of 6° off towards (111),” Thin Solid
Films, vol. 520, no. 1, pp. 606–609, 2011.
mla: Garralaga Rojas, E., et al. “Lift-off of Mesoporous Layers by Electrochemical
Etching on Si (100) Substrates with Miscut of 6° off towards (111).” Thin Solid
Films, vol. 520, no. 1, Elsevier BV, 2011, pp. 606–09, doi:10.1016/j.tsf.2011.07.063.
short: E. Garralaga Rojas, B. Terheiden, H. Plagwitz, J. Hensen, V. Wiedemeier,
G. Berth, A. Zrenner, R. Brendel, Thin Solid Films 520 (2011) 606–609.
date_created: 2018-09-11T14:21:12Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1016/j.tsf.2011.07.063
intvolume: ' 520'
issue: '1'
keyword:
- Porous Si
- Layer transfer
- Thin-film
- Photovoltaics
language:
- iso: eng
page: 606-609
publication: Thin Solid Films
publication_identifier:
issn:
- 0040-6090
publication_status: published
publisher: Elsevier BV
status: public
title: Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates
with miscut of 6° off towards (111)
type: journal_article
user_id: '49428'
volume: 520
year: '2011'
...