---
_id: '24406'
abstract:
- lang: eng
text: "A subharmonic receiver for sensing applications in \r\nthe 245 GHz
ISM band has been proposed. The receiver consists \r\nof a single-ended common
base LNA, a 60 GHz push-push VCO \r\nwith 1/32 divider, a transconductance
4th subharmonic mixer and \r\nIF amplifier. The receiver is fabricated in
\ fT/fmax=300/500 GHz \r\nSiGe: C BiCMOS technology. Its measured single-ended
\ gain is \r\n21 dB at 243 GHz with tuning range of 12 GHz, and the
\ single-\r\nside band noise figure is 32 dB. The input 1-dB compression
\ \r\npoint is at -37 dBm. The receiver dissipates a power of 358 mW. \r\nIndex
\ Terms— SiGe technology, millimeter-wave circuits, 245 \r\nGHz, CB LNA,
SHM, VCO, sub-harmonic receiver."
author:
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Mao Y, Schmalz K, Borngräber J, Scheytt C. 245-GHz subharmonic receiver in
SiGe . Microwave Theory and Techniques, IEEE Transactions on. 2012;PP(99):183-186.
apa: Mao, Y., Schmalz, K., Borngräber, J., & Scheytt, C. (2012). 245-GHz subharmonic
receiver in SiGe . Microwave Theory and Techniques, IEEE Transactions On,
PP(99), 183–186.
bibtex: '@article{Mao_Schmalz_Borngräber_Scheytt_2012, title={245-GHz subharmonic
receiver in SiGe }, volume={PP}, number={99}, journal={Microwave Theory and Techniques,
IEEE Transactions on}, author={Mao, Yanfei and Schmalz, Klaus and Borngräber,
Johannes and Scheytt, Christoph}, year={2012}, pages={183–186} }'
chicago: 'Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt.
“245-GHz Subharmonic Receiver in SiGe .” Microwave Theory and Techniques, IEEE
Transactions On PP, no. 99 (2012): 183–86.'
ieee: Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “245-GHz subharmonic receiver
in SiGe ,” Microwave Theory and Techniques, IEEE Transactions on, vol.
PP, no. 99, pp. 183–186, 2012.
mla: Mao, Yanfei, et al. “245-GHz Subharmonic Receiver in SiGe .” Microwave Theory
and Techniques, IEEE Transactions On, vol. PP, no. 99, 2012, pp. 183–86.
short: Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, Microwave Theory and Techniques,
IEEE Transactions On PP (2012) 183–186.
conference:
end_date: 30.10.2012
start_date: 29.10.2012
date_created: 2021-09-14T12:54:44Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
issue: '99'
language:
- iso: eng
page: 183-186
publication: Microwave Theory and Techniques, IEEE Transactions on
publication_identifier:
eisbn:
- 978-2-87487-028-6
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6483766
status: public
title: '245-GHz subharmonic receiver in SiGe '
type: journal_article
user_id: '15931'
volume: PP
year: '2012'
...
---
_id: '24407'
abstract:
- lang: eng
text: A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated
in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes
switching conditions for the amplification stage of the switch-mode power amplifier
in comparison to the BDSM architecture. The BDSM is clocked at 5 GHz, while the
notch frequency can be tuned in a range of 2.1-2.2 GHz. The modulator achieves
46.6-dB signal-to-noise and distortion ratio in 10-MHz bandwidth for a sine-wave
input at 2.2 GHz consuming 330 mW from a 3-V supply. The BDSM was also tested
with a single-channel WCDMA signal. It has demonstrated 42.2-dBc adjacent channel
leakage ratio at 5-MHz offset and less than 2.1% error vector magnitude over the
tuning range.
author:
- first_name: Philip
full_name: Ostrovskyy, Philip
last_name: Ostrovskyy
- first_name: Hans
full_name: Gustat, Hans
last_name: Gustat
- first_name: Maurits
full_name: Ortmanns, Maurits
last_name: Ortmanns
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Ostrovskyy P, Gustat H, Ortmanns M, Scheytt C. A 5-Gb/s 2.1–2.2-GHz Bandpass
\Delta \Sigma Modulator for Switch-Mode Power Amplifier. Microwave Theory and
Techniques, IEEE Transactions on. 2012;60(8):2524-2531. doi:10.1109/TMTT.2012.2203143
apa: Ostrovskyy, P., Gustat, H., Ortmanns, M., & Scheytt, C. (2012). A 5-Gb/s
2.1–2.2-GHz Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier.
Microwave Theory and Techniques, IEEE Transactions On, 60(8), 2524–2531.
https://doi.org/10.1109/TMTT.2012.2203143
bibtex: '@article{Ostrovskyy_Gustat_Ortmanns_Scheytt_2012, title={A 5-Gb/s 2.1–2.2-GHz
Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier}, volume={60},
DOI={10.1109/TMTT.2012.2203143},
number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Ostrovskyy,
Philip and Gustat, Hans and Ortmanns, Maurits and Scheytt, Christoph}, year={2012},
pages={2524–2531} }'
chicago: 'Ostrovskyy, Philip, Hans Gustat, Maurits Ortmanns, and Christoph Scheytt.
“A 5-Gb/s 2.1–2.2-GHz Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier.”
Microwave Theory and Techniques, IEEE Transactions On 60, no. 8 (2012):
2524–31. https://doi.org/10.1109/TMTT.2012.2203143.'
ieee: 'P. Ostrovskyy, H. Gustat, M. Ortmanns, and C. Scheytt, “A 5-Gb/s 2.1–2.2-GHz
Bandpass \Delta \Sigma Modulator for Switch-Mode Power Amplifier,” Microwave
Theory and Techniques, IEEE Transactions on, vol. 60, no. 8, pp. 2524–2531,
2012, doi: 10.1109/TMTT.2012.2203143.'
mla: Ostrovskyy, Philip, et al. “A 5-Gb/s 2.1–2.2-GHz Bandpass \Delta \Sigma Modulator
for Switch-Mode Power Amplifier.” Microwave Theory and Techniques, IEEE Transactions
On, vol. 60, no. 8, 2012, pp. 2524–31, doi:10.1109/TMTT.2012.2203143.
short: P. Ostrovskyy, H. Gustat, M. Ortmanns, C. Scheytt, Microwave Theory and Techniques,
IEEE Transactions On 60 (2012) 2524–2531.
date_created: 2021-09-14T12:54:46Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/TMTT.2012.2203143
intvolume: ' 60'
issue: '8'
language:
- iso: eng
page: 2524-2531
publication: Microwave Theory and Techniques, IEEE Transactions on
publication_identifier:
eissn:
- 1557-9670
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6227312
status: public
title: A 5-Gb/s 2.1–2.2-GHz Bandpass \Delta \Sigma Modulator for Switch-Mode Power
Amplifier
type: journal_article
user_id: '15931'
volume: 60
year: '2012'
...
---
_id: '24408'
abstract:
- lang: eng
text: This paper presents a 60-GHz SiGe PA with a 29.2% power-added efficiency (PAE),
a peak power of 16.8 dBm, and a peak output 1-dB compression (OP 1dB ) of 14 dBm.
Its measured gain is 13.5 dB at 60 GHz with a corresponding 3-dB bandwidth of
47-74 GHz. The PAE is above 25% with a supply voltage from 2.2 to 4 V. A cascode
stage has been analyzed and used as the amplifier core. The high PAE is achieved
by pushing the upper transistor of the cascode stage to weak avalanche area and
correct transistor sizing. The linearity is achieved by optimizing the input matching
and emitter degeneration. Safe operation conditions of heterojunction bipolar
transistors at dc and high frequencies have been investigated at weak avalanche
area. A safe operation boundary for high frequencies is given based on our experimental
results and analytical derivations. Large-signal stress tests have shown there
is no performance degradation and have proved the validity of this safe operation
boundary.
author:
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Gerhard G.
full_name: Fischer, Gerhard G.
last_name: Fischer
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Sun Y, Fischer GG, Scheytt C. A Compact Linear 60-GHz PA With 29.2% PAE Operating
at Weak Avalanche. Microwave Theory and Techniques, IEEE Transactions on.
2012;60(8):2581-2589. doi:10.1109/TMTT.2012.2202684
apa: Sun, Y., Fischer, G. G., & Scheytt, C. (2012). A Compact Linear 60-GHz
PA With 29.2% PAE Operating at Weak Avalanche. Microwave Theory and Techniques,
IEEE Transactions On, 60(8), 2581–2589. https://doi.org/10.1109/TMTT.2012.2202684
bibtex: '@article{Sun_Fischer_Scheytt_2012, title={A Compact Linear 60-GHz PA With
29.2% PAE Operating at Weak Avalanche}, volume={60}, DOI={10.1109/TMTT.2012.2202684},
number={8}, journal={Microwave Theory and Techniques, IEEE Transactions on}, author={Sun,
Yaoming and Fischer, Gerhard G. and Scheytt, Christoph}, year={2012}, pages={2581–2589}
}'
chicago: 'Sun, Yaoming, Gerhard G. Fischer, and Christoph Scheytt. “A Compact Linear
60-GHz PA With 29.2% PAE Operating at Weak Avalanche.” Microwave Theory and
Techniques, IEEE Transactions On 60, no. 8 (2012): 2581–89. https://doi.org/10.1109/TMTT.2012.2202684.'
ieee: 'Y. Sun, G. G. Fischer, and C. Scheytt, “A Compact Linear 60-GHz PA With 29.2%
PAE Operating at Weak Avalanche,” Microwave Theory and Techniques, IEEE Transactions
on, vol. 60, no. 8, pp. 2581–2589, 2012, doi: 10.1109/TMTT.2012.2202684.'
mla: Sun, Yaoming, et al. “A Compact Linear 60-GHz PA With 29.2% PAE Operating at
Weak Avalanche.” Microwave Theory and Techniques, IEEE Transactions On,
vol. 60, no. 8, 2012, pp. 2581–89, doi:10.1109/TMTT.2012.2202684.
short: Y. Sun, G.G. Fischer, C. Scheytt, Microwave Theory and Techniques, IEEE Transactions
On 60 (2012) 2581–2589.
date_created: 2021-09-14T12:59:31Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/TMTT.2012.2202684
intvolume: ' 60'
issue: '8'
language:
- iso: eng
page: ' 2581 - 2589'
publication: Microwave Theory and Techniques, IEEE Transactions on
publication_identifier:
eissn:
- '1557-9670 '
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6236242
status: public
title: A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche
type: journal_article
user_id: '15931'
volume: 60
year: '2012'
...
---
_id: '24409'
abstract:
- lang: eng
text: We propose a new circuit for the realization of transimpedance amplifiers
(TIAs), targeted at reducing the input-referred noise of the TIA or alternatively
increasing the bandwidth, without increasing the power dissipation. An intensive
theoretical analysis of the method is given. A prototype chip is fabricated in
0.25- μm SiGe BiCMOS technology. The TIA has a gain of 71 dBΩ , a bandwidth of
20.5 GHz, and an average input-referred current noise density of 18 pA/√Hz . The
circuit operates from a 2.5-V supply, and power dissipation is 57 mW.
author:
- first_name: Behnam
full_name: Sedighi, Behnam
last_name: Sedighi
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Sedighi B, Scheytt C. Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud
Optical Links. (Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial
Engineering. 2012;59(8):461-465. doi:10.1109/TCSII.2012.2204118
apa: Sedighi, B., & Scheytt, C. (2012). Low-Power SiGe BiCMOS Transimpedance
Amplifier for 25-GBaud Optical Links. (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung
Und Industrial Engineering, 59(8), 461–465. https://doi.org/10.1109/TCSII.2012.2204118
bibtex: '@article{Sedighi_Scheytt_2012, title={Low-Power SiGe BiCMOS Transimpedance
Amplifier for 25-GBaud Optical Links}, volume={59}, DOI={10.1109/TCSII.2012.2204118},
number={8}, journal={(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und
Industrial Engineering}, author={Sedighi, Behnam and Scheytt, Christoph}, year={2012},
pages={461–465} }'
chicago: 'Sedighi, Behnam, and Christoph Scheytt. “Low-Power SiGe BiCMOS Transimpedance
Amplifier for 25-GBaud Optical Links.” (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung
Und Industrial Engineering 59, no. 8 (2012): 461–65. https://doi.org/10.1109/TCSII.2012.2204118.'
ieee: 'B. Sedighi and C. Scheytt, “Low-Power SiGe BiCMOS Transimpedance Amplifier
for 25-GBaud Optical Links,” (Refa) FB/IE Zeitschrift für Unternehmensentwicklung
und Industrial Engineering, vol. 59, no. 8, pp. 461–465, 2012, doi: 10.1109/TCSII.2012.2204118.'
mla: Sedighi, Behnam, and Christoph Scheytt. “Low-Power SiGe BiCMOS Transimpedance
Amplifier for 25-GBaud Optical Links.” (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung
Und Industrial Engineering, vol. 59, no. 8, 2012, pp. 461–65, doi:10.1109/TCSII.2012.2204118.
short: B. Sedighi, C. Scheytt, (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung
Und Industrial Engineering 59 (2012) 461–465.
date_created: 2021-09-14T12:59:32Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/TCSII.2012.2204118
intvolume: ' 59'
issue: '8'
language:
- iso: eng
page: 461-465
publication: (Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6241407
status: public
title: Low-Power SiGe BiCMOS Transimpedance Amplifier for 25-GBaud Optical Links
type: journal_article
user_id: '15931'
volume: 59
year: '2012'
...
---
_id: '24410'
abstract:
- lang: eng
text: This paper reviews recent results of wireless transmitter and receiver ICs
at 122 and 245 GHz in 0.13 µm SiGe BiCMOS technology together with an efficient
on-chip antenna. A transmitter IC with 5 dBm output power and directional onchip
power measurement for built-in-self-test is presented. A 122 GHz passive HBT diode
mixer design is discussed and results are shown. The mixer exhibits superior 1/f
noise performance which makes it especially suitable for FMCW/CW radar sensors.
Furthermore a highly integrated 245 GHz transmitter with 1 dBm maximum output
power was realized. The IC dissipates only 380 mW. A low-loss on-chip antenna
for 130 GHz with 60% efficiency was implemented and measured. It uses localized
backside etching techniques and allows for simplified and very cost-efficient
mm-wave packaging
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Ruoyu
full_name: Wang, Ruoyu
last_name: Wang
citation:
ama: 'Scheytt C, Sun Y, Schmalz K, Wang R. SiGe BiCMOS Transceivers, Antennas, and
Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz. In: IMS 2012
(International Microwave Symposium). ; 2012. doi:10.1109/MWSYM.2012.6259487'
apa: Scheytt, C., Sun, Y., Schmalz, K., & Wang, R. (2012). SiGe BiCMOS Transceivers,
Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz. IMS
2012 (International Microwave Symposium). https://doi.org/10.1109/MWSYM.2012.6259487
bibtex: '@inproceedings{Scheytt_Sun_Schmalz_Wang_2012, title={SiGe BiCMOS Transceivers,
Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz},
DOI={10.1109/MWSYM.2012.6259487},
booktitle={IMS 2012 (International Microwave Symposium)}, author={Scheytt, Christoph
and Sun, Yaoming and Schmalz, Klaus and Wang, Ruoyu}, year={2012} }'
chicago: Scheytt, Christoph, Yaoming Sun, Klaus Schmalz, and Ruoyu Wang. “SiGe BiCMOS
Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM Bands at 122
and 245 GHz.” In IMS 2012 (International Microwave Symposium), 2012. https://doi.org/10.1109/MWSYM.2012.6259487.
ieee: 'C. Scheytt, Y. Sun, K. Schmalz, and R. Wang, “SiGe BiCMOS Transceivers, Antennas,
and Ultra-Low-Cost Packaging for the ISM Bands at 122 and 245 GHz,” Montreal,
QC, Canada, 2012, doi: 10.1109/MWSYM.2012.6259487.'
mla: Scheytt, Christoph, et al. “SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost
Packaging for the ISM Bands at 122 and 245 GHz.” IMS 2012 (International Microwave
Symposium), 2012, doi:10.1109/MWSYM.2012.6259487.
short: 'C. Scheytt, Y. Sun, K. Schmalz, R. Wang, in: IMS 2012 (International Microwave
Symposium), 2012.'
conference:
end_date: 22.06.2012
location: Montreal, QC, Canada
start_date: 17.06.2012
date_created: 2021-09-14T13:01:20Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/MWSYM.2012.6259487
language:
- iso: eng
publication: IMS 2012 (International Microwave Symposium)
publication_identifier:
eisbn:
- 978-1-4673-1088-8
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6259487
status: public
title: SiGe BiCMOS Transceivers, Antennas, and Ultra-Low-Cost Packaging for the ISM
Bands at 122 and 245 GHz
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24411'
abstract:
- lang: eng
text: A 245 GHz transmitter for sensing applications has been realized, which consists
of a push-push VCO with 1/64 frequency divider, a transformer- coupled one-stage
power amplifier, and a frequency doubler. It is fabricated in 0.13μm SiGe:C BiCMOS
technology with f T /f max of 300GHz/500GHz. The peak output power of the transmitter
is 2 dBm. The 3-dB bandwidth reaches from 229 GHz to 251 GHz. The output power
is 1 dBm at 245 GHz. The transmitter dissipates 0.29 W. Additionally, a test-circuit
with an integrated two-stage power amplifier and a frequency doubler is presented,
which reaches 1.4 dBm at 245 GHz and dissipates 0.19 W.
author:
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Bernd
full_name: Heinemann, Bernd
last_name: Heinemann
- first_name: Holger
full_name: Rücker, Holger
last_name: Rücker
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Schmalz K, Borngräber J, Heinemann B, Rücker H, Scheytt C. A 245 GHz transmitter
in SiGe technology. In: Radio Frequency Integrated Circuits Symposium (RFIC),
2012 IEEE. ; 2012:195-198. doi:10.1109/RFIC.2012.6242262'
apa: Schmalz, K., Borngräber, J., Heinemann, B., Rücker, H., & Scheytt, C. (2012).
A 245 GHz transmitter in SiGe technology. Radio Frequency Integrated Circuits
Symposium (RFIC), 2012 IEEE, 195–198. https://doi.org/10.1109/RFIC.2012.6242262
bibtex: '@inproceedings{Schmalz_Borngräber_Heinemann_Rücker_Scheytt_2012, title={A
245 GHz transmitter in SiGe technology}, DOI={10.1109/RFIC.2012.6242262},
booktitle={Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE}, author={Schmalz,
Klaus and Borngräber, Johannes and Heinemann, Bernd and Rücker, Holger and Scheytt,
Christoph}, year={2012}, pages={195–198} }'
chicago: Schmalz, Klaus, Johannes Borngräber, Bernd Heinemann, Holger Rücker, and
Christoph Scheytt. “A 245 GHz Transmitter in SiGe Technology.” In Radio Frequency
Integrated Circuits Symposium (RFIC), 2012 IEEE, 195–98, 2012. https://doi.org/10.1109/RFIC.2012.6242262.
ieee: 'K. Schmalz, J. Borngräber, B. Heinemann, H. Rücker, and C. Scheytt, “A 245
GHz transmitter in SiGe technology,” in Radio Frequency Integrated Circuits
Symposium (RFIC), 2012 IEEE, 2012, pp. 195–198, doi: 10.1109/RFIC.2012.6242262.'
mla: Schmalz, Klaus, et al. “A 245 GHz Transmitter in SiGe Technology.” Radio
Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE, 2012, pp. 195–98,
doi:10.1109/RFIC.2012.6242262.
short: 'K. Schmalz, J. Borngräber, B. Heinemann, H. Rücker, C. Scheytt, in: Radio
Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE, 2012, pp. 195–198.'
conference:
end_date: 19.06.2012
start_date: 17.06.2012
date_created: 2021-09-14T13:01:21Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/RFIC.2012.6242262
language:
- iso: eng
page: 195 -198
publication: Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
publication_identifier:
eisbn:
- 978-1-4673-0416-0
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6242262
status: public
title: A 245 GHz transmitter in SiGe technology
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24412'
abstract:
- lang: eng
text: In this publication an integrated dielectric sensor with read-out circuit
in SiGe BiCMOS technology at 125GHz is presented. The sensor consist of a 500
µm shorted half-wave coplanar waveguide transmission line in the top metal layer.
Read-out of the sensor is performed by measurement of its reflection coefficient
with an integrated multiprobe reflectometer and signal source. The MMIC has been
fabricated in a 190-GHz f T SiGe:C BiCMOS technology and assembled on a printed
circuit board. Functionality of the sensor is demonstrated with a stimulus frequency
from 118 to 133GHz with immersion of the sensor into a binary methanol-ethanol
mixture.
author:
- first_name: Benjamin
full_name: Laemmle, Benjamin
last_name: Laemmle
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Robert
full_name: Weigel, Robert
last_name: Weigel
- first_name: Dietmar
full_name: Kissinger, Dietmar
last_name: Kissinger
citation:
ama: 'Laemmle B, Schmalz K, Scheytt C, Weigel R, Kissinger D. An integrated 125GHz
Sensor with read-out circuit for permittivity measurement of liquids. In: Microwave
Symposium Digest (MTT), 2012 IEEE MTT-S International. ; 2012:1-3. doi:10.1109/MWSYM.2012.6258392'
apa: Laemmle, B., Schmalz, K., Scheytt, C., Weigel, R., & Kissinger, D. (2012).
An integrated 125GHz Sensor with read-out circuit for permittivity measurement
of liquids. Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International,
1–3. https://doi.org/10.1109/MWSYM.2012.6258392
bibtex: '@inproceedings{Laemmle_Schmalz_Scheytt_Weigel_Kissinger_2012, title={An
integrated 125GHz Sensor with read-out circuit for permittivity measurement of
liquids}, DOI={10.1109/MWSYM.2012.6258392},
booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Laemmle,
Benjamin and Schmalz, Klaus and Scheytt, Christoph and Weigel, Robert and Kissinger,
Dietmar}, year={2012}, pages={1–3} }'
chicago: Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Robert Weigel, and
Dietmar Kissinger. “An Integrated 125GHz Sensor with Read-out Circuit for Permittivity
Measurement of Liquids.” In Microwave Symposium Digest (MTT), 2012 IEEE MTT-S
International, 1–3, 2012. https://doi.org/10.1109/MWSYM.2012.6258392.
ieee: 'B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, and D. Kissinger, “An integrated
125GHz Sensor with read-out circuit for permittivity measurement of liquids,”
in Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012,
pp. 1–3, doi: 10.1109/MWSYM.2012.6258392.'
mla: Laemmle, Benjamin, et al. “An Integrated 125GHz Sensor with Read-out Circuit
for Permittivity Measurement of Liquids.” Microwave Symposium Digest (MTT),
2012 IEEE MTT-S International, 2012, pp. 1–3, doi:10.1109/MWSYM.2012.6258392.
short: 'B. Laemmle, K. Schmalz, C. Scheytt, R. Weigel, D. Kissinger, in: Microwave
Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3.'
conference:
end_date: 22.06.2012
start_date: 17.06.2012
date_created: 2021-09-14T13:01:23Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/MWSYM.2012.6258392
language:
- iso: eng
page: 1 -3
publication: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
publication_identifier:
eisbn:
- 978-1-4673-1088-8
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6258392
status: public
title: An integrated 125GHz Sensor with read-out circuit for permittivity measurement
of liquids
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24413'
abstract:
- lang: eng
text: In this paper, a novel fully digital modulator for a switch mode power amplifier
(SMPA) is presented. The modulator converts the input baseband amplitude and phase
signals into a two-level pulse train for driving an RF SMPA. The simulation results
demonstrated a proof of the concept. The proposed architecture is analyzed in
terms of accuracy by measuring EVM. The impact of the modulator parameters on
the SMPA performance is investigated and corresponding results are shown. The
modulator was simulated with a 20 MHz LTE signal.
author:
- first_name: Philip
full_name: Ostrovskyy, Philip
last_name: Ostrovskyy
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: SungJun
full_name: Lee, SungJun
last_name: Lee
- first_name: BongHyuk
full_name: Park, BongHyuk
last_name: Park
- first_name: JaeHo
full_name: Jung, JaeHo
last_name: Jung
citation:
ama: 'Ostrovskyy P, Scheytt C, Lee S, Park B, Jung J. A fully digital polar modulator
for switch mode RF power amplifier. In: Proc. IEEE Int Circuits and Systems
(ISCAS) Symp. ; 2012:2385-2388. doi:10.1109/ISCAS.2012.6271777'
apa: Ostrovskyy, P., Scheytt, C., Lee, S., Park, B., & Jung, J. (2012). A fully
digital polar modulator for switch mode RF power amplifier. Proc. IEEE Int
Circuits and Systems (ISCAS) Symp, 2385–2388. https://doi.org/10.1109/ISCAS.2012.6271777
bibtex: '@inproceedings{Ostrovskyy_Scheytt_Lee_Park_Jung_2012, title={A fully digital
polar modulator for switch mode RF power amplifier}, DOI={10.1109/ISCAS.2012.6271777},
booktitle={Proc. IEEE Int Circuits and Systems (ISCAS) Symp}, author={Ostrovskyy,
Philip and Scheytt, Christoph and Lee, SungJun and Park, BongHyuk and Jung, JaeHo},
year={2012}, pages={2385–2388} }'
chicago: Ostrovskyy, Philip, Christoph Scheytt, SungJun Lee, BongHyuk Park, and
JaeHo Jung. “A Fully Digital Polar Modulator for Switch Mode RF Power Amplifier.”
In Proc. IEEE Int Circuits and Systems (ISCAS) Symp, 2385–88, 2012. https://doi.org/10.1109/ISCAS.2012.6271777.
ieee: 'P. Ostrovskyy, C. Scheytt, S. Lee, B. Park, and J. Jung, “A fully digital
polar modulator for switch mode RF power amplifier,” in Proc. IEEE Int Circuits
and Systems (ISCAS) Symp, 2012, pp. 2385–2388, doi: 10.1109/ISCAS.2012.6271777.'
mla: Ostrovskyy, Philip, et al. “A Fully Digital Polar Modulator for Switch Mode
RF Power Amplifier.” Proc. IEEE Int Circuits and Systems (ISCAS) Symp,
2012, pp. 2385–88, doi:10.1109/ISCAS.2012.6271777.
short: 'P. Ostrovskyy, C. Scheytt, S. Lee, B. Park, J. Jung, in: Proc. IEEE Int
Circuits and Systems (ISCAS) Symp, 2012, pp. 2385–2388.'
conference:
end_date: 23.05.2012
start_date: 20.05.2012
date_created: 2021-09-14T13:01:24Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/ISCAS.2012.6271777
language:
- iso: eng
page: 2385-2388
publication: Proc. IEEE Int Circuits and Systems (ISCAS) Symp
publication_identifier:
eisbn:
- 978-1-4673-0219-7
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6271777
status: public
title: A fully digital polar modulator for switch mode RF power amplifier
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24414'
abstract:
- lang: eng
text: 'We present a novel graphene-based-device concept for a high-frequency operation:
a hot-electron graphene base transistor (GBT). Simulations show that GBTs have
high current on/off ratios and high current gain. Simulations and small-signal
models indicate that it potentially allows terahertz operation. Based on energy-band
considerations, we propose a specific material solution that is compatible with
SiGe process lines.'
author:
- first_name: Wolfgang
full_name: Mehr, Wolfgang
last_name: Mehr
- first_name: Jarek
full_name: Dabrowski, Jarek
last_name: Dabrowski
- first_name: Max C.
full_name: Lemme, Max C.
last_name: Lemme
- first_name: Gunther
full_name: Lippert, Gunther
last_name: Lippert
- first_name: Grzegorz
full_name: Lupina, Grzegorz
last_name: Lupina
- first_name: Mikael
full_name: Ostling, Mikael
last_name: Ostling
- first_name: Ya-Hong
full_name: Xie, Ya-Hong
last_name: Xie
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Mehr W, Dabrowski J, Lemme MC, et al. Vertical Graphene Base Transistor. (Refa)
FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering.
2012;33(5):691-693. doi:10.1109/LED.2012.2189193
apa: Mehr, W., Dabrowski, J., Lemme, M. C., Lippert, G., Lupina, G., Ostling, M.,
Xie, Y.-H., & Scheytt, C. (2012). Vertical Graphene Base Transistor. (Refa)
FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering,
33(5), 691–693. https://doi.org/10.1109/LED.2012.2189193
bibtex: '@article{Mehr_Dabrowski_Lemme_Lippert_Lupina_Ostling_Xie_Scheytt_2012,
title={Vertical Graphene Base Transistor}, volume={33}, DOI={10.1109/LED.2012.2189193},
number={5}, journal={(Refa) FB/IE Zeitschrift für Unternehmensentwicklung und
Industrial Engineering}, author={Mehr, Wolfgang and Dabrowski, Jarek and Lemme,
Max C. and Lippert, Gunther and Lupina, Grzegorz and Ostling, Mikael and Xie,
Ya-Hong and Scheytt, Christoph}, year={2012}, pages={691–693} }'
chicago: 'Mehr, Wolfgang, Jarek Dabrowski, Max C. Lemme, Gunther Lippert, Grzegorz
Lupina, Mikael Ostling, Ya-Hong Xie, and Christoph Scheytt. “Vertical Graphene
Base Transistor.” (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und
Industrial Engineering 33, no. 5 (2012): 691–93. https://doi.org/10.1109/LED.2012.2189193.'
ieee: 'W. Mehr et al., “Vertical Graphene Base Transistor,” (Refa) FB/IE
Zeitschrift für Unternehmensentwicklung und Industrial Engineering, vol. 33,
no. 5, pp. 691–693, 2012, doi: 10.1109/LED.2012.2189193.'
mla: Mehr, Wolfgang, et al. “Vertical Graphene Base Transistor.” (Refa) FB/IE
Zeitschrift Für Unternehmensentwicklung Und Industrial Engineering, vol. 33,
no. 5, 2012, pp. 691–93, doi:10.1109/LED.2012.2189193.
short: W. Mehr, J. Dabrowski, M.C. Lemme, G. Lippert, G. Lupina, M. Ostling, Y.-H.
Xie, C. Scheytt, (Refa) FB/IE Zeitschrift Für Unternehmensentwicklung Und Industrial
Engineering 33 (2012) 691–693.
date_created: 2021-09-14T13:01:25Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/LED.2012.2189193
intvolume: ' 33'
issue: '5'
language:
- iso: eng
page: 691-693
publication: (Refa) FB/IE Zeitschrift für Unternehmensentwicklung und Industrial Engineering
publication_identifier:
eissn:
- '1558-0563 '
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6177217
status: public
title: Vertical Graphene Base Transistor
type: journal_article
user_id: '15931'
volume: 33
year: '2012'
...
---
_id: '24415'
abstract:
- lang: eng
text: Millimeter-Wave (mm-W) is considered a potential technology for high-data
rate wireless transmission and for high-resolution short-range radar, due to the
7-9 GHz bandwidth at the 60 GHz unlicensed band available worldwide. Developing
ultrawideband architectures including multiple-input-multiple-output (MIMO) antenna
systems at mm-W offer many advantages including jointly optimized analogue and
digital signal processing at carrier frequency and baseband. This allows for flexible
antenna designs and reduced losses, as many passive structures can be avoided
at both sides of the link. Besides, based on flexible polarimetric approaches,
the polarimetric propagation of electromagnetic waves can be exploited. In this
paper we present a 60 GHz polarimetric MIMO system architecture, which includes
analogue miniaturized frontends designed and manufactured by multi-layer packaging
technologies. Such architecture permitted the design of compact MIMO radar and
multi-dimensional channel sounding. The MIMO approach allows not only polarimetric
filtering and fully polarimetric/directional signal processing to increase the
signal-to-clutter-plus-noise ratio of mm-W radar systems, but also the full characterization
of wireless channels including multipath with orthogonal polarizations.
author:
- first_name: Alexis-Paolo
full_name: Garcia-Ariza, Alexis-Paolo
last_name: Garcia-Ariza
- first_name: Robert
full_name: Müller, Robert
last_name: Müller
- first_name: Ralf
full_name: Stephan, Ralf
last_name: Stephan
- first_name: Frank
full_name: Wollenschläger, Frank
last_name: Wollenschläger
- first_name: Alexander
full_name: Schulz, Alexander
last_name: Schulz
- first_name: Mohamed
full_name: Elkhouly, Mohamed
last_name: Elkhouly
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Uwe
full_name: Trautwein, Uwe
last_name: Trautwein
- first_name: Jens
full_name: Müller, Jens
id: '1245'
last_name: Müller
- first_name: Reiner
full_name: Thomae, Reiner
last_name: Thomae
- first_name: Matthias
full_name: Hein, Matthias
last_name: Hein
citation:
ama: 'Garcia-Ariza A-P, Müller R, Stephan R, et al. 60 GHz Polarimetric MIMO Sensing:
architectures and technology. In: EuCAP2012 (European Conference on Antennas
and Propagation). ; 2012:2578-2582. doi:10.1109/EuCAP.2012.6206544'
apa: 'Garcia-Ariza, A.-P., Müller, R., Stephan, R., Wollenschläger, F., Schulz,
A., Elkhouly, M., Scheytt, C., Trautwein, U., Müller, J., Thomae, R., & Hein,
M. (2012). 60 GHz Polarimetric MIMO Sensing: architectures and technology. EuCAP2012
(European Conference on Antennas and Propagation), 2578–2582. https://doi.org/10.1109/EuCAP.2012.6206544'
bibtex: '@inproceedings{Garcia-Ariza_Müller_Stephan_Wollenschläger_Schulz_Elkhouly_Scheytt_Trautwein_Müller_Thomae_et
al._2012, place={Prague}, title={60 GHz Polarimetric MIMO Sensing: architectures
and technology}, DOI={10.1109/EuCAP.2012.6206544},
booktitle={EuCAP2012 (European Conference on Antennas and Propagation)}, author={Garcia-Ariza,
Alexis-Paolo and Müller, Robert and Stephan, Ralf and Wollenschläger, Frank and
Schulz, Alexander and Elkhouly, Mohamed and Scheytt, Christoph and Trautwein,
Uwe and Müller, Jens and Thomae, Reiner and et al.}, year={2012}, pages={2578–2582}
}'
chicago: 'Garcia-Ariza, Alexis-Paolo, Robert Müller, Ralf Stephan, Frank Wollenschläger,
Alexander Schulz, Mohamed Elkhouly, Christoph Scheytt, et al. “60 GHz Polarimetric
MIMO Sensing: Architectures and Technology.” In EuCAP2012 (European Conference
on Antennas and Propagation), 2578–82. Prague, 2012. https://doi.org/10.1109/EuCAP.2012.6206544.'
ieee: 'A.-P. Garcia-Ariza et al., “60 GHz Polarimetric MIMO Sensing: architectures
and technology,” in EuCAP2012 (European Conference on Antennas and Propagation),
2012, pp. 2578–2582, doi: 10.1109/EuCAP.2012.6206544.'
mla: 'Garcia-Ariza, Alexis-Paolo, et al. “60 GHz Polarimetric MIMO Sensing: Architectures
and Technology.” EuCAP2012 (European Conference on Antennas and Propagation),
2012, pp. 2578–82, doi:10.1109/EuCAP.2012.6206544.'
short: 'A.-P. Garcia-Ariza, R. Müller, R. Stephan, F. Wollenschläger, A. Schulz,
M. Elkhouly, C. Scheytt, U. Trautwein, J. Müller, R. Thomae, M. Hein, in: EuCAP2012
(European Conference on Antennas and Propagation), Prague, 2012, pp. 2578–2582.'
date_created: 2021-09-14T13:01:26Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/EuCAP.2012.6206544
language:
- iso: eng
page: 2578-2582
place: Prague
publication: EuCAP2012 (European Conference on Antennas and Propagation)
publication_identifier:
eisbn:
- 978-1-4577-0920-3
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/abstract/document/6206544
status: public
title: '60 GHz Polarimetric MIMO Sensing: architectures and technology'
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24416'
abstract:
- lang: eng
text: This paper describes the design of D-band phased-array circuits in 0.25 μm
technology. The first part describes the design of the passive components which
are used in the phased-array systems such as balun, Wilkinson divider and branch-line
coupler. A millimeter-wave vector-modulator is designed to support both amplitude
and phase control for beam-forming applications. In the second part the designed
circuits are integrated together to form a two channel 110-130 GHz phased-array
chip. Each channel exhibits 360° phase control with 15 dB of amplitude control
range and gain of -10 dB. The entire chip draws 45 mA from 3.3 V supply. The millimeter-wave
phase shifting and the low-power consumption makes it ideal for highly integrated
scalable beam-forming systems for both imaging and communication.
author:
- first_name: Mohamed
full_name: Elkhouly, Mohamed
last_name: Elkhouly
- first_name: Srdjan
full_name: Glisic, Srdjan
last_name: Glisic
- first_name: Frank
full_name: Ellinger, Frank
last_name: Ellinger
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Elkhouly M, Glisic S, Ellinger F, Scheytt C. 120 GHz phased-array circuits
in 0.25 µm SiGe BiCMOS technology. In: GeMIC 2012. ; 2012:1-4.'
apa: Elkhouly, M., Glisic, S., Ellinger, F., & Scheytt, C. (2012). 120 GHz phased-array
circuits in 0.25 µm SiGe BiCMOS technology. GeMIC 2012, 1–4.
bibtex: '@inproceedings{Elkhouly_Glisic_Ellinger_Scheytt_2012, title={120 GHz phased-array
circuits in 0.25 µm SiGe BiCMOS technology}, booktitle={GeMIC 2012}, author={Elkhouly,
Mohamed and Glisic, Srdjan and Ellinger, Frank and Scheytt, Christoph}, year={2012},
pages={1–4} }'
chicago: Elkhouly, Mohamed, Srdjan Glisic, Frank Ellinger, and Christoph Scheytt.
“120 GHz Phased-Array Circuits in 0.25 Μm SiGe BiCMOS Technology.” In GeMIC
2012, 1–4, 2012.
ieee: M. Elkhouly, S. Glisic, F. Ellinger, and C. Scheytt, “120 GHz phased-array
circuits in 0.25 µm SiGe BiCMOS technology,” in GeMIC 2012, 2012, pp. 1–4.
mla: Elkhouly, Mohamed, et al. “120 GHz Phased-Array Circuits in 0.25 Μm SiGe BiCMOS
Technology.” GeMIC 2012, 2012, pp. 1–4.
short: 'M. Elkhouly, S. Glisic, F. Ellinger, C. Scheytt, in: GeMIC 2012, 2012, pp.
1–4.'
conference:
end_date: 14.03.2012
start_date: 12.03.2012
date_created: 2021-09-14T13:01:28Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
language:
- iso: eng
page: 1-4
publication: GeMIC 2012
publication_identifier:
eisbn:
- 978-3-9812668-4-9
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6185149
status: public
title: 120 GHz phased-array circuits in 0.25 µm SiGe BiCMOS technology
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24417'
abstract:
- lang: eng
text: In recent years, subthreshold operation has become a research focus for digital
systems with limited energy budget (e.g. mobile, battery-powered devices, radio
frequency identification (RFID), wireless sensor networks, or biomedical applications).
Subthreshold operation allows for such low power consumption by reducing the supply
voltage of the circuit below the threshold voltage of the transistors. As dynamic
power depends quadratically on supply voltage, and static power depends exponentially
on supply voltage, considerable power savings are achieved. At the same time propagation
delays increase due to reduced transistor currents. Effectively, energy consumption
per cycle can typically be reduced by a factor of 10 using subthreshold operation.
author:
- first_name: Sven
full_name: Luetkemeier, Sven
last_name: Luetkemeier
- first_name: Thorsten
full_name: Jungeblut, Thorsten
last_name: Jungeblut
- first_name: Mario
full_name: Porrmann, Mario
last_name: Porrmann
- first_name: Ulrich
full_name: Rückert, Ulrich
last_name: Rückert
citation:
ama: 'Luetkemeier S, Jungeblut T, Porrmann M, Rückert U. A 200mV 32b Subthreshold
Processor with Adaptive Supply Voltage Control. In: Proc. IEEE Int. Solid-State
Circuits Conf. Digest of Technical Papers. ; 2012:484-485. doi:10.1109/ISSCC.2012.6177101'
apa: Luetkemeier, S., Jungeblut, T., Porrmann, M., & Rückert, U. (2012). A 200mV
32b Subthreshold Processor with Adaptive Supply Voltage Control. Proc. IEEE
Int. Solid-State Circuits Conf. Digest of Technical Papers, 484–485. https://doi.org/10.1109/ISSCC.2012.6177101
bibtex: '@inproceedings{Luetkemeier_Jungeblut_Porrmann_Rückert_2012, title={A 200mV
32b Subthreshold Processor with Adaptive Supply Voltage Control}, DOI={10.1109/ISSCC.2012.6177101},
booktitle={Proc. IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers},
author={Luetkemeier, Sven and Jungeblut, Thorsten and Porrmann, Mario and Rückert,
Ulrich}, year={2012}, pages={484–485} }'
chicago: Luetkemeier, Sven, Thorsten Jungeblut, Mario Porrmann, and Ulrich Rückert.
“A 200mV 32b Subthreshold Processor with Adaptive Supply Voltage Control.” In
Proc. IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers,
484–85, 2012. https://doi.org/10.1109/ISSCC.2012.6177101.
ieee: 'S. Luetkemeier, T. Jungeblut, M. Porrmann, and U. Rückert, “A 200mV 32b Subthreshold
Processor with Adaptive Supply Voltage Control,” in Proc. IEEE Int. Solid-State
Circuits Conf. Digest of Technical Papers, 2012, pp. 484–485, doi: 10.1109/ISSCC.2012.6177101.'
mla: Luetkemeier, Sven, et al. “A 200mV 32b Subthreshold Processor with Adaptive
Supply Voltage Control.” Proc. IEEE Int. Solid-State Circuits Conf. Digest
of Technical Papers, 2012, pp. 484–85, doi:10.1109/ISSCC.2012.6177101.
short: 'S. Luetkemeier, T. Jungeblut, M. Porrmann, U. Rückert, in: Proc. IEEE Int.
Solid-State Circuits Conf. Digest of Technical Papers, 2012, pp. 484–485.'
conference:
end_date: 23.02.2012
start_date: 19.02.2012
date_created: 2021-09-14T13:01:29Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/ISSCC.2012.6177101
language:
- iso: eng
page: 484-485
publication: Proc. IEEE Int. Solid-State Circuits Conf. Digest of Technical Papers
publication_identifier:
eisbn:
- 978-1-4673-0377-4
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6177101
status: public
title: A 200mV 32b Subthreshold Processor with Adaptive Supply Voltage Control
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24418'
abstract:
- lang: eng
text: The paper presents a four stage 245 GHz LNA in an f t /f max =280/425 GHz
SiGe technology and a 4 th sub harmonic 245 GHz transconductance mixer in an f
t /f max =250/300 GHz SiGe technology. The LNA takes advantage of common base
(CB) topology for each stage and has 12 dB gain at 245 GHz, while exhibiting a
3 dB bandwidth of 26 GHz. It has a supply voltage of 2V and power dissipation
of 28 mW. The transconductance mixer has -7 dB conversion gain at 245 GHz with
an LO power of 8 dBm at 61 GHz. The mixer draws 9.8 mA at 3V. Simulation results
of the receiver comprising the CB LNA and SHM mixer are given.
author:
- first_name: Yanfei
full_name: Mao, Yanfei
last_name: Mao
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Johannes
full_name: Borngräber, Johannes
last_name: Borngräber
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Mao Y, Schmalz K, Borngräber J, Scheytt C. A 245 GHz CB LNA and SHM mixer
in SiGe technology. In: SiRF 2012 (Silicon Monolithic Integrated Circuits in
RF Systems). ; 2012:5-8. doi:10.1109/SiRF.2012.6160120'
apa: Mao, Y., Schmalz, K., Borngräber, J., & Scheytt, C. (2012). A 245 GHz CB
LNA and SHM mixer in SiGe technology. SiRF 2012 (Silicon Monolithic Integrated
Circuits in RF Systems), 5–8. https://doi.org/10.1109/SiRF.2012.6160120
bibtex: '@inproceedings{Mao_Schmalz_Borngräber_Scheytt_2012, title={A 245 GHz CB
LNA and SHM mixer in SiGe technology}, DOI={10.1109/SiRF.2012.6160120},
booktitle={SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)},
author={Mao, Yanfei and Schmalz, Klaus and Borngräber, Johannes and Scheytt, Christoph},
year={2012}, pages={5–8} }'
chicago: Mao, Yanfei, Klaus Schmalz, Johannes Borngräber, and Christoph Scheytt.
“A 245 GHz CB LNA and SHM Mixer in SiGe Technology.” In SiRF 2012 (Silicon
Monolithic Integrated Circuits in RF Systems), 5–8, 2012. https://doi.org/10.1109/SiRF.2012.6160120.
ieee: 'Y. Mao, K. Schmalz, J. Borngräber, and C. Scheytt, “A 245 GHz CB LNA and
SHM mixer in SiGe technology,” in SiRF 2012 (Silicon Monolithic Integrated
Circuits in RF Systems), 2012, pp. 5–8, doi: 10.1109/SiRF.2012.6160120.'
mla: Mao, Yanfei, et al. “A 245 GHz CB LNA and SHM Mixer in SiGe Technology.” SiRF
2012 (Silicon Monolithic Integrated Circuits in RF Systems), 2012, pp. 5–8,
doi:10.1109/SiRF.2012.6160120.
short: 'Y. Mao, K. Schmalz, J. Borngräber, C. Scheytt, in: SiRF 2012 (Silicon Monolithic
Integrated Circuits in RF Systems), 2012, pp. 5–8.'
conference:
end_date: 18.01.2012
start_date: 16.01.2012
date_created: 2021-09-14T13:01:30Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/SiRF.2012.6160120
language:
- iso: eng
page: 5-8
publication: SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)
publication_identifier:
eisbn:
- 978-1-4577-1318-7
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6160120
status: public
title: A 245 GHz CB LNA and SHM mixer in SiGe technology
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24419'
abstract:
- lang: eng
text: In this publication an integrated reflectometer in SiGe BiCMOS technology
for sensor readout at 62 GHz is presented. The circuit includes an oscillator,
a six-port reflectometer, and a dummy sensor for verification purposes. The circuit
has a bandwidth of 8GHz at a center frequency of 62 GHz. It operates at 3.75V
supply voltage and consumes 282 mW. The measurement principle is demonstrated
and the scattering parameters of the dummy sensor are compared to measurement
of a breakout circuit with a commercially available vector network analyzer. The
circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies
an area of 0.9 mm 2 .
author:
- first_name: Benjamin
full_name: Laemmle, Benjamin
last_name: Laemmle
- first_name: Klaus
full_name: Schmalz, Klaus
last_name: Schmalz
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Dietmar
full_name: Kissinger, Dietmar
last_name: Kissinger
- first_name: Robert
full_name: Weigel, Robert
last_name: Weigel
citation:
ama: 'Laemmle B, Schmalz K, Scheytt C, Kissinger D, Weigel R. A 62GHz Reflectometer
for Biomedical Sensor Readout in SiGe BiCMOS Technology. In: SiRF 2012 (Silicon
Monolithic Integrated Circuits in RF Systems). ; 2012. doi:10.1109/SiRF.2012.6160125'
apa: Laemmle, B., Schmalz, K., Scheytt, C., Kissinger, D., & Weigel, R. (2012).
A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology.
SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems). https://doi.org/10.1109/SiRF.2012.6160125
bibtex: '@inproceedings{Laemmle_Schmalz_Scheytt_Kissinger_Weigel_2012, title={A
62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology},
DOI={10.1109/SiRF.2012.6160125},
booktitle={SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)},
author={Laemmle, Benjamin and Schmalz, Klaus and Scheytt, Christoph and Kissinger,
Dietmar and Weigel, Robert}, year={2012} }'
chicago: Laemmle, Benjamin, Klaus Schmalz, Christoph Scheytt, Dietmar Kissinger,
and Robert Weigel. “A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe
BiCMOS Technology.” In SiRF 2012 (Silicon Monolithic Integrated Circuits in
RF Systems), 2012. https://doi.org/10.1109/SiRF.2012.6160125.
ieee: 'B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, and R. Weigel, “A 62GHz
Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology,” 2012,
doi: 10.1109/SiRF.2012.6160125.'
mla: Laemmle, Benjamin, et al. “A 62GHz Reflectometer for Biomedical Sensor Readout
in SiGe BiCMOS Technology.” SiRF 2012 (Silicon Monolithic Integrated Circuits
in RF Systems), 2012, doi:10.1109/SiRF.2012.6160125.
short: 'B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel, in: SiRF 2012
(Silicon Monolithic Integrated Circuits in RF Systems), 2012.'
conference:
end_date: 18.01.2012
start_date: 16.01.2012
date_created: 2021-09-14T13:01:32Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1109/SiRF.2012.6160125
language:
- iso: eng
publication: SiRF 2012 (Silicon Monolithic Integrated Circuits in RF Systems)
publication_identifier:
eisbn:
- 978-1-4577-1318-7
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6160125
status: public
title: A 62GHz Reflectometer for Biomedical Sensor Readout in SiGe BiCMOS Technology
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24420'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Wojciech
full_name: Debski, Wojciech
last_name: Debski
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Ruoyu
full_name: Wang, Ruoyu
last_name: Wang
- first_name: Wolfgang
full_name: Winkler, Wolfgang
last_name: Winkler
citation:
ama: 'Scheytt C, Debski W, Sun Y, Wang R, Winkler W. 122 GHz Radartransceiver und
Komponenten in 0.13ym SiGe BiCMOS. In: ; 2012.'
apa: Scheytt, C., Debski, W., Sun, Y., Wang, R., & Winkler, W. (2012). 122
GHz Radartransceiver und Komponenten in 0.13ym SiGe BiCMOS.
bibtex: '@inproceedings{Scheytt_Debski_Sun_Wang_Winkler_2012, title={122 GHz Radartransceiver
und Komponenten in 0.13ym SiGe BiCMOS}, author={Scheytt, Christoph and Debski,
Wojciech and Sun, Yaoming and Wang, Ruoyu and Winkler, Wolfgang}, year={2012}
}'
chicago: Scheytt, Christoph, Wojciech Debski, Yaoming Sun, Ruoyu Wang, and Wolfgang
Winkler. “122 GHz Radartransceiver Und Komponenten in 0.13ym SiGe BiCMOS,” 2012.
ieee: C. Scheytt, W. Debski, Y. Sun, R. Wang, and W. Winkler, “122 GHz Radartransceiver
und Komponenten in 0.13ym SiGe BiCMOS,” 2012.
mla: Scheytt, Christoph, et al. 122 GHz Radartransceiver Und Komponenten in 0.13ym
SiGe BiCMOS. 2012.
short: 'C. Scheytt, W. Debski, Y. Sun, R. Wang, W. Winkler, in: 2012.'
date_created: 2021-09-14T13:01:33Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
language:
- iso: eng
related_material:
link:
- relation: confirmation
url: http://a.xueshu.baidu.com/usercenter/paper/show?paperid=b58675ad66d82c4a5fe2f649bf89ec5b
status: public
title: 122 GHz Radartransceiver und Komponenten in 0.13ym SiGe BiCMOS
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24422'
abstract:
- lang: eng
text: This paper presents two local navigation strategies for multi-robot systems
in performing exploration of unknown environments. The strategies are based on
the frontier cell for mapping the environment and navigating in it. Additionally,
two coordination strategies are used to solve possible conflicts among robots.
Key criteria investigated are the efficiency and effectiveness represented by
the completion time, traveled distance, the total steps, and the task distribution.
The developed algorithms are tested in simulations as well as in experiments with
Khepera III mini robots running on the Teleworkbench. To evaluate the robustness
of the developed algorithms, tests are performed under different environmental
configurations and varying numbers of robots. The results show the advantages
of both proposed strategies in different situations such as environment types
and starting positions.
author:
- first_name: Andry
full_name: Tanoto, Andry
last_name: Tanoto
- first_name: Ulrich
full_name: Rückert, Ulrich
last_name: Rückert
citation:
ama: 'Tanoto A, Rückert U. Local Navigation Strategies for Multi-Robot Exploration.
In: From Simulation to Experimentation with Mini-Robots. Vol 41. ; 2012:pp.1197-1203.
doi:10.1016/j.proeng.2012.07.301'
apa: Tanoto, A., & Rückert, U. (2012). Local Navigation Strategies for Multi-Robot
Exploration. From Simulation to Experimentation with Mini-Robots, 41,
pp.1197-1203. https://doi.org/10.1016/j.proeng.2012.07.301
bibtex: '@inproceedings{Tanoto_Rückert_2012, title={Local Navigation Strategies
for Multi-Robot Exploration}, volume={41}, DOI={10.1016/j.proeng.2012.07.301},
booktitle={From Simulation to Experimentation with Mini-Robots}, author={Tanoto,
Andry and Rückert, Ulrich}, year={2012}, pages={pp.1197-1203} }'
chicago: Tanoto, Andry, and Ulrich Rückert. “Local Navigation Strategies for Multi-Robot
Exploration.” In From Simulation to Experimentation with Mini-Robots, 41:pp.1197-1203,
2012. https://doi.org/10.1016/j.proeng.2012.07.301.
ieee: 'A. Tanoto and U. Rückert, “Local Navigation Strategies for Multi-Robot Exploration,”
in From Simulation to Experimentation with Mini-Robots, 2012, vol. 41,
p. pp.1197-1203, doi: 10.1016/j.proeng.2012.07.301.'
mla: Tanoto, Andry, and Ulrich Rückert. “Local Navigation Strategies for Multi-Robot
Exploration.” From Simulation to Experimentation with Mini-Robots, vol.
41, 2012, p. pp.1197-1203, doi:10.1016/j.proeng.2012.07.301.
short: 'A. Tanoto, U. Rückert, in: From Simulation to Experimentation with Mini-Robots,
2012, p. pp.1197-1203.'
date_created: 2021-09-14T13:01:35Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
doi: 10.1016/j.proeng.2012.07.301
intvolume: ' 41'
language:
- iso: eng
page: pp.1197-1203
publication: From Simulation to Experimentation with Mini-Robots
related_material:
link:
- relation: confirmation
url: https://www.researchgate.net/publication/235733017_Local_Navigation_Strategies_for_Multi-Robot_Exploration_From_Simulation_to_Experimentation_with_Mini-Robots
status: public
title: Local Navigation Strategies for Multi-Robot Exploration
type: conference
user_id: '15931'
volume: 41
year: '2012'
...
---
_id: '24424'
abstract:
- lang: eng
text: 'One challenging aspect in the development of multi-robot systems is their
validation in a real environment. However, experiments with real robots are considerably
tedious as experimenting is repetitive and consists of several steps: setup, execution,
data logging, monitoring, and analysis. Moreover, experiments also require many
resources especially in the case when involving many robots. This paper describes
the role of the Teleworkbench as a platform for conducting experiments involving
mini robots. The Teleworkbench offers functionality that can help users in validating
their robot software from simulation to prototyping using mini robots. A traffic
management system is used as a scenario for demonstrating the support of the Teleworkbench
for validating multi-robot systems.'
author:
- first_name: Andry
full_name: Tanoto, Andry
last_name: Tanoto
- first_name: Felix
full_name: Werner, Felix
last_name: Werner
- first_name: Ulrich
full_name: Rückert, Ulrich
last_name: Rückert
- first_name: Joaquin
full_name: Sitte, Joaquin
last_name: Sitte
citation:
ama: 'Tanoto A, Werner F, Rückert U, Sitte J. Multi-Robot System Validation: From
Simulation to Prototyping with Mini Robots in the Teleworkbench. In: Advances
in Autonomous Mini Robots. Springer-Verlag Berlin Heidelberg; 2012:147-159.'
apa: 'Tanoto, A., Werner, F., Rückert, U., & Sitte, J. (2012). Multi-Robot System
Validation: From Simulation to Prototyping with Mini Robots in the Teleworkbench.
In Advances in Autonomous Mini Robots (pp. 147–159). Springer-Verlag Berlin
Heidelberg.'
bibtex: '@inbook{Tanoto_Werner_Rückert_Sitte_2012, title={Multi-Robot System Validation:
From Simulation to Prototyping with Mini Robots in the Teleworkbench}, booktitle={Advances
in Autonomous Mini Robots}, publisher={Springer-Verlag Berlin Heidelberg}, author={Tanoto,
Andry and Werner, Felix and Rückert, Ulrich and Sitte, Joaquin}, year={2012},
pages={147–159} }'
chicago: 'Tanoto, Andry, Felix Werner, Ulrich Rückert, and Joaquin Sitte. “Multi-Robot
System Validation: From Simulation to Prototyping with Mini Robots in the Teleworkbench.”
In Advances in Autonomous Mini Robots, 147–59. Springer-Verlag Berlin Heidelberg,
2012.'
ieee: 'A. Tanoto, F. Werner, U. Rückert, and J. Sitte, “Multi-Robot System Validation:
From Simulation to Prototyping with Mini Robots in the Teleworkbench,” in Advances
in Autonomous Mini Robots, Springer-Verlag Berlin Heidelberg, 2012, pp. 147–159.'
mla: 'Tanoto, Andry, et al. “Multi-Robot System Validation: From Simulation to Prototyping
with Mini Robots in the Teleworkbench.” Advances in Autonomous Mini Robots,
Springer-Verlag Berlin Heidelberg, 2012, pp. 147–59.'
short: 'A. Tanoto, F. Werner, U. Rückert, J. Sitte, in: Advances in Autonomous Mini
Robots, Springer-Verlag Berlin Heidelberg, 2012, pp. 147–159.'
date_created: 2021-09-14T13:01:38Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
language:
- iso: eng
page: pp. 147-159
publication: Advances in Autonomous Mini Robots
publisher: Springer-Verlag Berlin Heidelberg
related_material:
link:
- relation: confirmation
url: https://link.springer.com/book/10.1007%2F978-3-642-27482-4
status: public
title: 'Multi-Robot System Validation: From Simulation to Prototyping with Mini Robots
in the Teleworkbench'
type: book_chapter
user_id: '15931'
year: '2012'
...
---
_id: '24425'
abstract:
- lang: ger
text: 'PSSS-Dekodierschaltung, dadurch gekennzeichnet, dass das analoge PSSS-Eingangssignal
mit N Spreizsequenzen und N Verknüpfungselementen (z. B. Multiplizierer) verknüpft
werden und die Ausgangssignale der N Verknüpfungselemente mit N analogen Integrierern
auf integriert werden, dass die Integrierer jeweils zum Beginn der empfangenen
Spreizsequenzen gleichzeitig mit dem Signal SYNC zurückgesetzt werden, dass der
Integrator über die Dauer einer Code-Sequenz das Eingangssignal auf integriert,
dass nach der Integration an den Ausgängen der Integratoren jeweils das dekodierte
Datensignal anliegt, dass die Ausgangssignale der Integrierer mit N parallelen
einem AD-Wandler digitalisiert werden. '
application_date: 03.10.2012
application_number: '102012019342'
author:
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: Scheytt C. Mixed-Signal PSSS-Empfänger. Published online 2012.
apa: Scheytt, C. (2012). Mixed-Signal PSSS-Empfänger.
bibtex: '@article{Scheytt_2012, title={Mixed-Signal PSSS-Empfänger}, author={Scheytt,
Christoph}, year={2012} }'
chicago: Scheytt, Christoph. “Mixed-Signal PSSS-Empfänger,” 2012.
ieee: C. Scheytt, “Mixed-Signal PSSS-Empfänger.” 2012.
mla: Scheytt, Christoph. Mixed-Signal PSSS-Empfänger. 2012.
short: C. Scheytt, (2012).
date_created: 2021-09-14T13:01:39Z
date_updated: 2022-01-06T06:56:20Z
department:
- _id: '58'
ipc: H04B 1/709
ipn: ' DE102012019342A1'
publication_date: 03.04.2014
related_material:
link:
- relation: confirmation
url: https://depatisnet.dpma.de/DepatisNet/depatisnet?action=bibdat&docid=DE102012019342A1
status: public
title: Mixed-Signal PSSS-Empfänger
type: patent
user_id: '15931'
year: '2012'
...
---
_id: '24543'
author:
- first_name: Yaoming
full_name: Sun, Yaoming
last_name: Sun
- first_name: Stefan
full_name: Beer, Stefan
last_name: Beer
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
- first_name: Ruoyu
full_name: Wang, Ruoyu
last_name: Wang
- first_name: Thomas
full_name: Zwick, Thomas
last_name: Zwick
citation:
ama: 'Sun Y, Beer S, Scheytt C, Wang R, Zwick T. mm-Wave SOC and SIP Design for
122 GHz Radar SSensor in the EU-FP7 Project SUCCESS. In: RF-MST Cluster Workshop
on MEMSWAVE 2012. ; 2012.'
apa: Sun, Y., Beer, S., Scheytt, C., Wang, R., & Zwick, T. (2012). mm-Wave SOC
and SIP Design for 122 GHz Radar SSensor in the EU-FP7 Project SUCCESS. RF-MST
Cluster Workshop on MEMSWAVE 2012.
bibtex: '@inproceedings{Sun_Beer_Scheytt_Wang_Zwick_2012, place={Antalya, Turkey},
title={mm-Wave SOC and SIP Design for 122 GHz Radar SSensor in the EU-FP7 Project
SUCCESS}, booktitle={RF-MST Cluster Workshop on MEMSWAVE 2012}, author={Sun, Yaoming
and Beer, Stefan and Scheytt, Christoph and Wang, Ruoyu and Zwick, Thomas}, year={2012}
}'
chicago: Sun, Yaoming, Stefan Beer, Christoph Scheytt, Ruoyu Wang, and Thomas Zwick.
“Mm-Wave SOC and SIP Design for 122 GHz Radar SSensor in the EU-FP7 Project SUCCESS.”
In RF-MST Cluster Workshop on MEMSWAVE 2012. Antalya, Turkey, 2012.
ieee: Y. Sun, S. Beer, C. Scheytt, R. Wang, and T. Zwick, “mm-Wave SOC and SIP Design
for 122 GHz Radar SSensor in the EU-FP7 Project SUCCESS,” Antalya, 2012.
mla: Sun, Yaoming, et al. “Mm-Wave SOC and SIP Design for 122 GHz Radar SSensor
in the EU-FP7 Project SUCCESS.” RF-MST Cluster Workshop on MEMSWAVE 2012,
2012.
short: 'Y. Sun, S. Beer, C. Scheytt, R. Wang, T. Zwick, in: RF-MST Cluster Workshop
on MEMSWAVE 2012, Antalya, Turkey, 2012.'
conference:
end_date: 04.07.2012
location: Antalya
start_date: 02.07.2012
date_created: 2021-09-16T08:29:14Z
date_updated: 2022-01-06T06:56:27Z
department:
- _id: '58'
language:
- iso: eng
place: Antalya, Turkey
publication: RF-MST Cluster Workshop on MEMSWAVE 2012
related_material:
link:
- relation: confirmation
url: https://delfmems.wordpress.com/2012/03/28/memswave-2012-2-4-july-2012-antalya-turkey/
status: public
title: mm-Wave SOC and SIP Design for 122 GHz Radar SSensor in the EU-FP7 Project
SUCCESS
type: conference
user_id: '15931'
year: '2012'
...
---
_id: '24544'
abstract:
- lang: eng
text: Design of a 40 Gb/s VCSEL driver IC capable of providing up to 10mA current
to common-cathode VCSELs is presented. Using low-power bandwidth enhancement techniques,
a prototype IC is successfully developed in 180-GHz SiGe BiCMOS technology. Measured
results show 34 GHz of bandwidth, open eye diagram with rise/fall time below 10
ps, and power dissipation of 130 mW.
author:
- first_name: Behnam
full_name: Sedighi, Behnam
last_name: Sedighi
- first_name: Christoph
full_name: Scheytt, Christoph
id: '37144'
last_name: Scheytt
citation:
ama: 'Sedighi B, Scheytt C. 40 Gb/s VCSEL driver IC with a new output current and
pre-emphasis adjustment method. In: Microwave Symposium Digest (MTT), 2012
IEEE MTT-S International. ; 2012:1-3. doi:10.1109/MWSYM.2012.6259501'
apa: Sedighi, B., & Scheytt, C. (2012). 40 Gb/s VCSEL driver IC with a new output
current and pre-emphasis adjustment method. Microwave Symposium Digest (MTT),
2012 IEEE MTT-S International, 1–3. https://doi.org/10.1109/MWSYM.2012.6259501
bibtex: '@inproceedings{Sedighi_Scheytt_2012, title={40 Gb/s VCSEL driver IC with
a new output current and pre-emphasis adjustment method}, DOI={10.1109/MWSYM.2012.6259501},
booktitle={Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International}, author={Sedighi,
Behnam and Scheytt, Christoph}, year={2012}, pages={1–3} }'
chicago: Sedighi, Behnam, and Christoph Scheytt. “40 Gb/s VCSEL Driver IC with a
New Output Current and Pre-Emphasis Adjustment Method.” In Microwave Symposium
Digest (MTT), 2012 IEEE MTT-S International, 1–3, 2012. https://doi.org/10.1109/MWSYM.2012.6259501.
ieee: 'B. Sedighi and C. Scheytt, “40 Gb/s VCSEL driver IC with a new output current
and pre-emphasis adjustment method,” in Microwave Symposium Digest (MTT), 2012
IEEE MTT-S International, Montreal, QC, Canada, 2012, pp. 1–3, doi: 10.1109/MWSYM.2012.6259501.'
mla: Sedighi, Behnam, and Christoph Scheytt. “40 Gb/s VCSEL Driver IC with a New
Output Current and Pre-Emphasis Adjustment Method.” Microwave Symposium Digest
(MTT), 2012 IEEE MTT-S International, 2012, pp. 1–3, doi:10.1109/MWSYM.2012.6259501.
short: 'B. Sedighi, C. Scheytt, in: Microwave Symposium Digest (MTT), 2012 IEEE
MTT-S International, 2012, pp. 1–3.'
conference:
end_date: 22.06.2012
location: ' Montreal, QC, Canada'
start_date: 17.06.2021
date_created: 2021-09-16T08:29:15Z
date_updated: 2022-01-06T06:56:27Z
department:
- _id: '58'
doi: 10.1109/MWSYM.2012.6259501
language:
- iso: eng
page: 1 -3
publication: Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
publication_identifier:
eisbn:
- 978-1-4673-1088-8
related_material:
link:
- relation: confirmation
url: https://ieeexplore.ieee.org/document/6259501
status: public
title: 40 Gb/s VCSEL driver IC with a new output current and pre-emphasis adjustment
method
type: conference
user_id: '15931'
year: '2012'
...