TY - CONF AU - Schwichtenberg, Simon AU - Engels, Gregor ID - 40 T2 - Proceedings of the 10th International Workshop on Ontology Matching collocated with the 14th International Semantic Web Conference (ISWC 2015), Bethlehem, PA, USA, October 12, 2015. TI - RSDL workbench results for OAEI 2015 VL - 1545 ER - TY - CONF AU - Brassat, Katharina AU - Brodehl, Christoph AU - Lindner, Jörg ID - 4018 TI - Self-assembled nanogap electrodes for the directed assembly of nanoparticles ER - TY - CONF AU - Brassat, Katharina AU - Brodehl, Christoph AU - Lindner, Jörg ID - 4019 TI - Self-assembled Nanogap Electrodes in Microfluidic Channels ER - TY - CONF AU - Brodehl, Christoph AU - Riedl, Thomas AU - Greulich-Weber, Siegmund AU - Lindner, Jörg ID - 4020 TI - Three-dimensional analysis of mask-clogging effects on the morphology of nanoparticles fabricated by nanosphere lithography ER - TY - CONF AU - Brodehl, Christoph AU - Greulich-Weber, Siegmund AU - Lindner, Jörg ID - 4021 TI - How to create billions of tailored plasmonic nanoparticles in half an hour ER - TY - CONF AU - Drude, Dennis AU - Brassat, Katharina AU - Brodehl, Christoph AU - Lindner, Jörg ID - 4022 TI - Correlation between defect densities in colloidal nanosphere masks and experimental parameters ER - TY - JOUR AU - Brodehl, Christoph AU - Greulich-Weber, Siegmund AU - Lindner, Jörg ID - 4023 JF - MRS Proceedings SN - 1946-4274 TI - An Algorithm for Tailoring of Nanoparticles by Double Angle Resolved Nanosphere Lithography VL - 1748 ER - TY - JOUR AB - We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic strained cubic AlN layers on 3C-SiC (001) substrates grown by means of molecular beam epitaxy. Surface morphologies of various QD sizes and densities were obtained from uncapped samples by atomic force microscopy. These results were correlated with similar but capped samples by photoluminescence experiments. The QD density varies by one order of magnitude from ~1x10^10 cm^-2 to ~1x10^11 cm^-2 as a function of the GaN coverage on the surface. The initial layer thickness for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers by a comparison between the experimental results and an analytical model. Our results reveal the strain-driven Stranski-Krastanov growth mode as the main formation process of the cubic GaN QDs. AU - Bürger, M. AU - Lindner, Jörg AU - Reuter, Dirk AU - As, D. J. ID - 4024 IS - 4-5 JF - physica status solidi (c) SN - 1862-6351 TI - Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process VL - 12 ER - TY - CONF AU - Garozzo, C. AU - Brassat, Katharina AU - La Magna, A. AU - Puglisi, R.A. AU - Lindner, Jörg ID - 4026 TI - Self-Arrangement of Colloidal Au Nanoparticles in SiO2-Nanopores fabricated by Block-Copolymer Lithography ER - TY - JOUR AB - We report the influence of {111} stacking faults on the cathodoluminescence (CL) emission characteristics of cubic GaN (c-GaN) films and cubic GaN/AlN multiquantum wells. Transmission electron microscopy (TEM) measurements indicate that stacking faults (SFs) on the {111} planes are the predominant crystallographic defects in epitaxial films, which were grown on 3CSiC/ Si (001) substrates by plasma-assisted molecular beam epitaxy. The correlation of the SFs and the luminescence output is evidenced with a CL setup integrated in a scanning TEM (STEM). By comparing the STEM images and the simultaneously measured CL signals it is demonstrated that SFs in these films lead to a reduced CL emission intensity. Furthermore, the CL emission intensity is shown to increase with increasing film thickness and decreasing SF density. This correlation can be connected to the reduction of the full width at half maximum of X-ray diffraction rocking curves with increasing film thickness of c-GaN films. AU - Kemper, R. M. AU - Veit, P. AU - Mietze, C. AU - Dempewolf, A. AU - Wecker, T. AU - Bertram, F. AU - Christen, J. AU - Lindner, Jörg AU - As, D. J. ID - 4027 IS - 4-5 JF - physica status solidi (c) SN - 1862-6351 TI - STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells VL - 12 ER -