@inproceedings{4005,
  author       = {{Brassat, Katharina and Bürger, Julius and Reinecke, Melanie  and Briese, Dennis and Duschik, K. and Schaper, Mirko and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Arrangement of perovskitic semiconductor nanoparticles using soft lithography }}},
  year         = {{2016}},
}

@inproceedings{4006,
  author       = {{Brassat, Katharina and Rüdiger, Arne and Bürger, Julius and Bremser, W.  and Strube, O. and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Site-selective protein immobilization on regular antidot patterns fabricated by nanosphere lithography }}},
  year         = {{2016}},
}

@inproceedings{4007,
  author       = {{Brassat, Katharina and Kool, Daniel and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Hierarchically ordered nanopore structures formed by combined nanosphere and block copolymer lithography }}},
  year         = {{2016}},
}

@inproceedings{4008,
  author       = {{Brassat, Katharina and Lindner, Jörg}},
  location     = {{Porquerolles (France)}},
  title        = {{{Sub-20 nm surface patterning by block copolymer lithography }}},
  year         = {{2016}},
}

@inproceedings{4009,
  author       = {{Brodehl, Christoph and Greulich-Weber, Siegmund and Lindner, Jörg}},
  location     = {{Lille (France)}},
  title        = {{{Fabricating metasurface-based optical devices with a low-cost technique}}},
  year         = {{2016}},
}

@inproceedings{4010,
  author       = {{Puglisi, R.A. and Bongiorno, C.  and Brassat, Katharina and Garozzo, Christina and La Magna, A.  and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{High-resolution TEM and STEM-EELS studies of colloidal Au nanoparticles self-assembled in nanometric SiO2 nanopore arrays fabricated by block-copolymer lithography }}},
  year         = {{2016}},
}

@inproceedings{4011,
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  location     = {{Warsaw (Poland)}},
  title        = {{{Automated SEM image analysis of the opening size distribution of nanosphere lithography masks and their origins }}},
  year         = {{2016}},
}

@inproceedings{4012,
  author       = {{Riedl, Thomas and Lindner, Jörg}},
  location     = {{Regensburg (Germany)}},
  title        = {{{Theoretical analysis of strain and misfit dislocation stability in axial-heteroepitaxial GaAs/InAs nanopillars}}},
  year         = {{2016}},
}

@inproceedings{4013,
  author       = {{Riedl, Thomas and Kemper, R.M. and As, Donald and Lindner, Jörg}},
  location     = {{Regensburg}},
  title        = {{{Stability of misfit dislocations in axial-heteroepitaxial 3CSiC/c-GaN nanopillars and nanomesas}}},
  year         = {{2016}},
}

@inproceedings{4014,
  author       = {{Rieger, T. and Riedl, Thomas and Lindner, Jörg and Pawlis, A.}},
  location     = {{Montpellier (France)}},
  title        = {{{Enhancement of the critical thickness of CdSe/ZnSe quantum wells via the strain compensation technique}}},
  year         = {{2016}},
}

@inproceedings{4015,
  author       = {{As, Donald and Kemper, R.M. and Riedl, Thomas and Lindner, Jörg}},
  location     = {{Regensburg}},
  title        = {{{Cubic GaN on pre-patterned 3C-SiC/Si (001) substrates}}},
  year         = {{2016}},
}

@inproceedings{4016,
  author       = {{Brassat, Katharina}},
  location     = {{Berlin (Germany)}},
  title        = {{{Hierarchical self-assembly by colloidal and block copolymer lithography }}},
  year         = {{2016}},
}

@inproceedings{4017,
  author       = {{Brassat, Katharina and Brodehl, Christoph and Lindner, Jörg}},
  location     = {{Cluj-Napoca (Romania)}},
  title        = {{{Nanopatterning of surfaces with nanosphere lithography, block copolymer lithography and combinations of both }}},
  year         = {{2016}},
}

@article{4244,
  abstract     = {{In this work we study the resonant and coherent properties of single InP-based InAs quantum dots, which show an optical emission in the telecom C-band and L-band. High-resolution resonant photocurrent spectroscopy on p–i–n devices reveals narrow linewidths and fully resolved fine structure splittings. We observe Lorentzian line shapes, which allow for the extraction of dephasing times as a function of the applied bias voltage. Coherent ps laser excitation results in pronounced Rabi rotations with increasing pulse area. For π-pulse excitation, we obtain more than 93 % of the theoretically expected photocurrent amplitude. Our results also demonstrate that such state-of-the-art InP-based quantum dots for the telecom band exhibit promising key parameters comparable to well-established InAs/GaAs counterparts.}},
  author       = {{Gordon, S. and Yacob, M. and Reithmaier, J. P. and Benyoucef, M. and Zrenner, Artur}},
  issn         = {{0946-2171}},
  journal      = {{Applied Physics B}},
  keywords     = {{Bias Voltage, Optical Parametric Oscillator, Molecular Beam Epitaxy Growth, Internal Electric Field, Dephasing Time}},
  number       = {{2}},
  publisher    = {{Springer Nature}},
  title        = {{{Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom band at 1.5 µm}}},
  doi          = {{10.1007/s00340-015-6279-6}},
  volume       = {{122}},
  year         = {{2016}},
}

@inproceedings{4374,
  author       = {{Zimmermann, Steffen and Herrmann, Philipp and Kundisch, Dennis and Nault, Barrie}},
  booktitle    = {{Workshop on IS Design and Economic Behavior (ISDEB)}},
  location     = {{Ilmenau, Germany}},
  title        = {{{How do different Sources of the Variance of Online Consumer Ratings matter?}}},
  year         = {{2016}},
}

@techreport{5020,
  author       = {{Hegemann, Annika}},
  title        = {{{Hemmt die Veräußerungsgewinnbesteuerung unternehmerische Flexibilität?}}},
  volume       = {{203}},
  year         = {{2016}},
}

@phdthesis{5021,
  author       = {{Hegemann, Annika}},
  publisher    = {{Universität Paderborn}},
  title        = {{{ Investitionszeitpunktentscheidungen bei Veräußerungsgewinnbesteuerung}}},
  year         = {{2016}},
}

@techreport{5022,
  abstract     = {{The Organisation for Economic Co-Operation and Development (OECD) recently proposed
an interest barrier to fight tax base erosion and profit shifting (BEPS). We use the introduction
of such an interest deductibility restriction in Germany as a quasi-experiment and find significant
corporate capital structure responses. Using single entity financial statements and a detailed matching
approach, we find evidence that companies that are affected by the interest barrier reduce their
leverage by 4.7 percentage points more than non-affected companies. The effects are stronger among
non-financially constrained firms. Our results imply that interest barrier effects on capital structure
have so far been heavily underestimated.}},
  author       = {{Alberternst, Stephan and Sureth-Sloane, Caren}},
  title        = {{{Interest Barrier and Capital Structure Response}}},
  volume       = {{206}},
  year         = {{2016}},
}

@techreport{5023,
  author       = {{Alberternst, Stephan}},
  title        = {{{Relevanz der deutschen Zinsschranke für Einzelunternehmer und Personengesellschaften - eine dynamische Analyse der Betroffenheit}}},
  volume       = {{207}},
  year         = {{2016}},
}

@phdthesis{5024,
  author       = {{Alberternst, Stephan}},
  publisher    = {{Universität Paderborn}},
  title        = {{{Die deutsche Zinsschranke : Betroffenheit, Wirksamkeit und ökonomische Konsequenzen}}},
  year         = {{2016}},
}