@inbook{3950, abstract = {{In the last decade, zinc blende structure III–V semiconductors have been increasingly utilized for the realization of high‐performance optoelectronic applications because of their tunable bandgaps, high carrier mobility and the absence of piezoelectric fields. However, the integration of III–V devices on the Si platform commonly used for CMOS electronic circuits still poses a challenge, due to the large densities of mismatch‐related defects in heteroepitaxial III–V layers grown on planar Si substrates. A promising method to obtain thin III–V layers of high crystalline quality is the growth on nanopatterned substrates. In this approach, defects can be effectively eliminated by elastic lattice relaxation in three dimensions or confined close to the substrate interface by using aspect‐ratio trapping masks. As a result, an etch pit density as low as 3.3 × 10^5 cm^−2 and a flat surface of submicron GaAs layers have been accomplished by growth onto a SiO2 nanohole film patterned Si(001) substrate, where the threading defects are trapped at the SiO2 mask sidewalls. An open issue that remains to be resolved is to gain a better understanding of the interplay between mask shape, growth conditions and formation of coalescence defects during mask overgrowth in order to achieve thin device quality III–V layers}}, author = {{Riedl, Thomas and Lindner, Jörg}}, booktitle = {{Nanoscaled Films and Layers}}, editor = {{Nanai, L.}}, isbn = {{9789535131434}}, publisher = {{InTech}}, title = {{{Heteroepitaxy of III–V Zinc Blende Semiconductors on Nanopatterned Substrates}}}, doi = {{10.5772/67572}}, year = {{2017}}, } @inproceedings{3951, author = {{Brassat, Katharina and Lindner, Jörg}}, location = {{Barcelona (Spain)}}, title = {{{Joining self-assembly techniques: A route to hierarchical nanopores}}}, year = {{2017}}, } @inproceedings{3952, author = {{Brassat, Katharina and Kool, Daniel and Bürger, Julius and Lindner, Jörg}}, location = {{Warsaw (Poland)}}, title = {{{Micro- and nanopatterned surfaces with tailored chemical and topographical contrast by self-assembly techniques}}}, year = {{2017}}, } @inproceedings{3953, author = {{Brassat, Katharina and Keller, A. and Grundmeier, G. and Bremser, W. and Strube, O. and Lindner, Jörg}}, location = {{Straßburg (France)}}, title = {{{Tailored antidot patterns created by nanosphere lithography for bioapplications}}}, year = {{2017}}, } @inproceedings{3954, author = {{Kismann, Michael and Riedl, Thomas and Lindner, Jörg}}, location = {{Straßburg (France)}}, title = {{{Morphological properties of nanopillar patterned Si surfaces obtained by nanosphere lithography and metal-assisted wet-chemical etching}}}, year = {{2017}}, } @inproceedings{3955, author = {{Kunnathully, Vinay and Riedl, Thomas and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}}, location = {{Warsaw (Poland)}}, title = {{{InAs heteroepitaxy on GaAs patterned by nanosphere lithography}}}, year = {{2017}}, } @inproceedings{3987, author = {{Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and Reuter, Dirk and Lindner, Jörg}}, location = {{Warsaq (Poland)}}, title = {{{Group III arsenide heteroepitaxy on Si(111) using SiNx nanohole masks patterned by nanosphere lithography}}}, year = {{2017}}, } @inproceedings{3988, author = {{Riedl, Thomas and Kunnathully, Vinay and Karlisch, A. and Reuter, Dirk and Weber, N. and Meier, Cedrik and Schierholz, R. and Lindner, Jörg}}, location = {{Straßburg (France)}}, title = {{{Morphology, structure and enhanced PL of molecular beam epitaxial In0.2Ga0.8As layers on nanopillar patterned GaAs}}}, year = {{2017}}, } @inproceedings{3989, author = {{Riedl, Thomas and Lindner, Jörg}}, location = {{Strasburg (France)}}, title = {{{Strain and strain energy in axial-heteroepitaxial GaAs/InAs nanopillars analyzed by atomistic and continuum elastic calculations}}}, year = {{2017}}, } @inproceedings{3990, author = {{Riedl, Thomas and Lindner, Jörg}}, location = {{Strasburg (France)}}, title = {{{The influence of the sphere material on the opening size distribution of nanosphere lithography masks}}}, year = {{2017}}, }