[{"_id":"32160","user_id":"42165","department":[{"_id":"424"}],"language":[{"iso":"ger"}],"type":"book_chapter","publication":"Peer Learning an Hochschulen. Elemente einer diversitysensiblen, inklusiven Bildung","editor":[{"last_name":"Stroot","full_name":"Stroot, Thea","first_name":"Thea"},{"first_name":"Petra","last_name":"Westphal","full_name":"Westphal, Petra"}],"status":"public","publisher":"Julius Klinkhardt","date_updated":"2022-07-18T09:22:42Z","date_created":"2022-06-24T14:57:15Z","author":[{"first_name":"Andrea","last_name":"Karsten","full_name":"Karsten, Andrea","id":"53917"},{"first_name":"Vanessa","full_name":"Frahnert, Vanessa","last_name":"Frahnert"},{"full_name":"Schäfer, Stefanie","last_name":"Schäfer","first_name":"Stefanie"}],"title":"Am Schreiben teilhaben. Das Textograph*innen-Programm an der Universität Paderborn","publication_status":"published","place":"Bad Heilbrunn","year":"2018","citation":{"ieee":"A. Karsten, V. Frahnert, and S. Schäfer, “Am Schreiben teilhaben. Das Textograph*innen-Programm an der Universität Paderborn,” in <i>Peer Learning an Hochschulen. Elemente einer diversitysensiblen, inklusiven Bildung</i>, T. Stroot and P. Westphal, Eds. Bad Heilbrunn: Julius Klinkhardt, 2018, pp. 242–261.","chicago":"Karsten, Andrea, Vanessa Frahnert, and Stefanie Schäfer. “Am Schreiben teilhaben. Das Textograph*innen-Programm an der Universität Paderborn.” In <i>Peer Learning an Hochschulen. Elemente einer diversitysensiblen, inklusiven Bildung</i>, edited by Thea Stroot and Petra Westphal, 242–61. Bad Heilbrunn: Julius Klinkhardt, 2018.","ama":"Karsten A, Frahnert V, Schäfer S. Am Schreiben teilhaben. Das Textograph*innen-Programm an der Universität Paderborn. In: Stroot T, Westphal P, eds. <i>Peer Learning an Hochschulen. Elemente einer diversitysensiblen, inklusiven Bildung</i>. Julius Klinkhardt; 2018:242-261.","apa":"Karsten, A., Frahnert, V., &#38; Schäfer, S. (2018). Am Schreiben teilhaben. Das Textograph*innen-Programm an der Universität Paderborn. In T. Stroot &#38; P. Westphal (Eds.), <i>Peer Learning an Hochschulen. Elemente einer diversitysensiblen, inklusiven Bildung</i> (pp. 242–261). Julius Klinkhardt.","bibtex":"@inbook{Karsten_Frahnert_Schäfer_2018, place={Bad Heilbrunn}, title={Am Schreiben teilhaben. Das Textograph*innen-Programm an der Universität Paderborn}, booktitle={Peer Learning an Hochschulen. Elemente einer diversitysensiblen, inklusiven Bildung}, publisher={Julius Klinkhardt}, author={Karsten, Andrea and Frahnert, Vanessa and Schäfer, Stefanie}, editor={Stroot, Thea and Westphal, Petra}, year={2018}, pages={242–261} }","short":"A. Karsten, V. Frahnert, S. Schäfer, in: T. Stroot, P. Westphal (Eds.), Peer Learning an Hochschulen. Elemente einer diversitysensiblen, inklusiven Bildung, Julius Klinkhardt, Bad Heilbrunn, 2018, pp. 242–261.","mla":"Karsten, Andrea, et al. “Am Schreiben teilhaben. Das Textograph*innen-Programm an der Universität Paderborn.” <i>Peer Learning an Hochschulen. Elemente einer diversitysensiblen, inklusiven Bildung</i>, edited by Thea Stroot and Petra Westphal, Julius Klinkhardt, 2018, pp. 242–61."},"page":"242 - 261"},{"language":[{"iso":"eng"}],"user_id":"71051","department":[{"_id":"304"}],"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13209","status":"public","abstract":[{"text":"We performed ab initio calculations to study oxygen and hydrogen point defects in the CuInSe2 (CISe) solar-cell material. We found that H interstitial defects (when one H atom is surrounded by four Se atoms) and HCu (when a H atom is replacing a Cu atom) are the most stable defects. Whereas these H substitutional defects remain neutral, H interstitial defects act as donor defects and are detrimental to the cell performance. The incorporation of H2 into the CISe lattice, on the other hand, is harmless to the p-type conductivity. Oxygen atoms tend to either substitute Se atoms in the CISe lattice or form interstitial defects, though the formation of substitutional defects is more favorable. All oxygen point defects have high formation energies, which results in a low concentration of these defects in CISe. However, the presence of oxygen in the system leads to the formation of secondary phases such as In2O3 and InCuO2. In addition to the point defects, we studied the adsorption of H2O molecules on a defect-free surface and a surface with a (2VCu + InCu) defect using the ab initio thermodynamics technique. Our results indicate that the dissociative water adsorption on the CISe surface is energetically unfavorable. Furthermore, in order to obtain a water-free surface, the surface with defects has to be calcined at a higher temperature compared to the defect-free surface.","lang":"eng"}],"type":"journal_article","publication":"J. Phys. Chem. C","doi":"10.1021/acs.jpcc.8b06709","title":"Theoretical Investigation of Interaction of CuInSe2 Absorber Material with Oxygen, Hydrogen, and Water","date_created":"2019-09-13T12:53:01Z","author":[{"first_name":"Sudhir","full_name":"Sahoo, Sudhir","last_name":"Sahoo"},{"first_name":"Ramya","full_name":"Kormath Madam Raghupathy, Ramya","id":"71692","last_name":"Kormath Madam Raghupathy","orcid":"https://orcid.org/0000-0003-4667-9744"},{"first_name":"Thomas","last_name":"Kühne","id":"49079","full_name":"Kühne, Thomas"},{"first_name":"Hossein","id":"71051","full_name":"Mirhosseini, Hossein","last_name":"Mirhosseini","orcid":"https://orcid.org/0000-0001-6179-1545"}],"volume":122,"date_updated":"2022-07-21T09:43:25Z","citation":{"apa":"Sahoo, S., Kormath Madam Raghupathy, R., Kühne, T., &#38; Mirhosseini, H. (2018). Theoretical Investigation of Interaction of CuInSe2 Absorber Material with Oxygen, Hydrogen, and Water. <i>J. Phys. Chem. C</i>, <i>122</i>(37), 21202–21209. <a href=\"https://doi.org/10.1021/acs.jpcc.8b06709\">https://doi.org/10.1021/acs.jpcc.8b06709</a>","mla":"Sahoo, Sudhir, et al. “Theoretical Investigation of Interaction of CuInSe2 Absorber Material with Oxygen, Hydrogen, and Water.” <i>J. Phys. Chem. C</i>, vol. 122, no. 37, 2018, pp. 21202–09, doi:<a href=\"https://doi.org/10.1021/acs.jpcc.8b06709\">10.1021/acs.jpcc.8b06709</a>.","bibtex":"@article{Sahoo_Kormath Madam Raghupathy_Kühne_Mirhosseini_2018, title={Theoretical Investigation of Interaction of CuInSe2 Absorber Material with Oxygen, Hydrogen, and Water}, volume={122}, DOI={<a href=\"https://doi.org/10.1021/acs.jpcc.8b06709\">10.1021/acs.jpcc.8b06709</a>}, number={37}, journal={J. Phys. Chem. C}, author={Sahoo, Sudhir and Kormath Madam Raghupathy, Ramya and Kühne, Thomas and Mirhosseini, Hossein}, year={2018}, pages={21202–21209} }","short":"S. Sahoo, R. Kormath Madam Raghupathy, T. Kühne, H. Mirhosseini, J. Phys. Chem. C 122 (2018) 21202–21209.","ieee":"S. Sahoo, R. Kormath Madam Raghupathy, T. Kühne, and H. Mirhosseini, “Theoretical Investigation of Interaction of CuInSe2 Absorber Material with Oxygen, Hydrogen, and Water,” <i>J. Phys. Chem. C</i>, vol. 122, no. 37, pp. 21202–21209, 2018, doi: <a href=\"https://doi.org/10.1021/acs.jpcc.8b06709\">10.1021/acs.jpcc.8b06709</a>.","chicago":"Sahoo, Sudhir, Ramya Kormath Madam Raghupathy, Thomas Kühne, and Hossein Mirhosseini. “Theoretical Investigation of Interaction of CuInSe2 Absorber Material with Oxygen, Hydrogen, and Water.” <i>J. Phys. Chem. C</i> 122, no. 37 (2018): 21202–9. <a href=\"https://doi.org/10.1021/acs.jpcc.8b06709\">https://doi.org/10.1021/acs.jpcc.8b06709</a>.","ama":"Sahoo S, Kormath Madam Raghupathy R, Kühne T, Mirhosseini H. Theoretical Investigation of Interaction of CuInSe2 Absorber Material with Oxygen, Hydrogen, and Water. <i>J Phys Chem C</i>. 2018;122(37):21202-21209. doi:<a href=\"https://doi.org/10.1021/acs.jpcc.8b06709\">10.1021/acs.jpcc.8b06709</a>"},"intvolume":"       122","page":"21202-21209","year":"2018","issue":"37","publication_status":"published"},{"abstract":[{"text":"In this work, we investigated ternary chalcogenide semiconductors to identify promising p-type transparent conducting materials (TCMs). High-throughput calculations were employed to find the compounds that satisfies our screening criteria. Our screening strategy was based on the size of band gaps, the values of hole effective masses, and p-type dopability. Our search led to the identification of seven promising compounds (IrSbS, Ba2GeSe4, Ba2SiSe4, Ba(BSe3)2, VCu3S4, NbCu3Se4, and CuBS2) as potential TCM candidates. In addition, branch point energy and optical absorption spectra calculations support our findings. Our results open a new direction for the design and development of p-type TCMs.","lang":"eng"}],"status":"public","publication":"Chemistry of Materials","type":"journal_article","language":[{"iso":"eng"}],"_id":"13210","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"department":[{"_id":"304"}],"user_id":"71051","year":"2018","page":"6794-6800","intvolume":"        30","citation":{"apa":"Kormath Madam Raghupathy, R., Wiebeler, H., Kühne, T., Felser, C., &#38; Mirhosseini, H. (2018). Database screening of ternary chalcogenides for p-type transparent conductors. <i>Chemistry of Materials</i>, <i>30</i>(19), 6794–6800. <a href=\"https://doi.org/10.1021/acs.chemmater.8b02719\">https://doi.org/10.1021/acs.chemmater.8b02719</a>","short":"R. Kormath Madam Raghupathy, H. Wiebeler, T. Kühne, C. Felser, H. Mirhosseini, Chemistry of Materials 30 (2018) 6794–6800.","mla":"Kormath Madam Raghupathy, Ramya, et al. “Database Screening of Ternary Chalcogenides for P-Type Transparent Conductors.” <i>Chemistry of Materials</i>, vol. 30, no. 19, American Chemical Society, 2018, pp. 6794–800, doi:<a href=\"https://doi.org/10.1021/acs.chemmater.8b02719\">10.1021/acs.chemmater.8b02719</a>.","bibtex":"@article{Kormath Madam Raghupathy_Wiebeler_Kühne_Felser_Mirhosseini_2018, title={Database screening of ternary chalcogenides for p-type transparent conductors}, volume={30}, DOI={<a href=\"https://doi.org/10.1021/acs.chemmater.8b02719\">10.1021/acs.chemmater.8b02719</a>}, number={19}, journal={Chemistry of Materials}, publisher={American Chemical Society}, author={Kormath Madam Raghupathy, Ramya and Wiebeler, Hendrik and Kühne, Thomas and Felser, Claudia and Mirhosseini, Hossein}, year={2018}, pages={6794–6800} }","ieee":"R. Kormath Madam Raghupathy, H. Wiebeler, T. Kühne, C. Felser, and H. Mirhosseini, “Database screening of ternary chalcogenides for p-type transparent conductors,” <i>Chemistry of Materials</i>, vol. 30, no. 19, pp. 6794–6800, 2018, doi: <a href=\"https://doi.org/10.1021/acs.chemmater.8b02719\">10.1021/acs.chemmater.8b02719</a>.","chicago":"Kormath Madam Raghupathy, Ramya, Hendrik Wiebeler, Thomas Kühne, Claudia Felser, and Hossein Mirhosseini. “Database Screening of Ternary Chalcogenides for P-Type Transparent Conductors.” <i>Chemistry of Materials</i> 30, no. 19 (2018): 6794–6800. <a href=\"https://doi.org/10.1021/acs.chemmater.8b02719\">https://doi.org/10.1021/acs.chemmater.8b02719</a>.","ama":"Kormath Madam Raghupathy R, Wiebeler H, Kühne T, Felser C, Mirhosseini H. Database screening of ternary chalcogenides for p-type transparent conductors. <i>Chemistry of Materials</i>. 2018;30(19):6794-6800. doi:<a href=\"https://doi.org/10.1021/acs.chemmater.8b02719\">10.1021/acs.chemmater.8b02719</a>"},"publication_status":"published","issue":"19","title":"Database screening of ternary chalcogenides for p-type transparent conductors","doi":"10.1021/acs.chemmater.8b02719","publisher":"American Chemical Society","date_updated":"2022-07-21T09:42:32Z","volume":30,"author":[{"orcid":"https://orcid.org/0000-0003-4667-9744","last_name":"Kormath Madam Raghupathy","full_name":"Kormath Madam Raghupathy, Ramya","id":"71692","first_name":"Ramya"},{"first_name":"Hendrik","full_name":"Wiebeler, Hendrik","last_name":"Wiebeler"},{"first_name":"Thomas","last_name":"Kühne","id":"49079","full_name":"Kühne, Thomas"},{"first_name":"Claudia","last_name":"Felser","full_name":"Felser, Claudia"},{"id":"71051","full_name":"Mirhosseini, Hossein","orcid":"https://orcid.org/0000-0001-6179-1545","last_name":"Mirhosseini","first_name":"Hossein"}],"date_created":"2019-09-13T12:53:02Z"},{"doi":"https://doi.org/10.1039/C7TC05311H ","title":"Rational design of transparent p-type conducting non-oxide materials from high-throughput calculations","author":[{"id":"71692","full_name":"Kormath Madam Raghupathy, Ramya","orcid":"https://orcid.org/0000-0003-4667-9744","last_name":"Kormath Madam Raghupathy","first_name":"Ramya"},{"first_name":"Thomas","id":"49079","full_name":"Kühne, Thomas","last_name":"Kühne"},{"full_name":"Felser, Claudia","last_name":"Felser","first_name":"Claudia"},{"full_name":"Mirhosseini, Hossein","id":"71051","orcid":"https://orcid.org/0000-0001-6179-1545","last_name":"Mirhosseini","first_name":"Hossein"}],"date_created":"2019-09-13T12:52:59Z","volume":6,"publisher":"Royal Society of Chemistry","date_updated":"2022-07-21T09:44:33Z","citation":{"mla":"Kormath Madam Raghupathy, Ramya, et al. “Rational Design of Transparent P-Type Conducting Non-Oxide Materials from High-Throughput Calculations.” <i>Journal of Materials Chemistry C</i>, vol. 6, no. 3, Royal Society of Chemistry, 2018, pp. 541–49, doi:<a href=\"https://doi.org/10.1039/C7TC05311H \">https://doi.org/10.1039/C7TC05311H </a>.","short":"R. Kormath Madam Raghupathy, T. Kühne, C. Felser, H. Mirhosseini, Journal of Materials Chemistry C 6 (2018) 541–549.","bibtex":"@article{Kormath Madam Raghupathy_Kühne_Felser_Mirhosseini_2018, title={Rational design of transparent p-type conducting non-oxide materials from high-throughput calculations}, volume={6}, DOI={<a href=\"https://doi.org/10.1039/C7TC05311H \">https://doi.org/10.1039/C7TC05311H </a>}, number={3}, journal={Journal of Materials Chemistry C}, publisher={Royal Society of Chemistry}, author={Kormath Madam Raghupathy, Ramya and Kühne, Thomas and Felser, Claudia and Mirhosseini, Hossein}, year={2018}, pages={541–549} }","apa":"Kormath Madam Raghupathy, R., Kühne, T., Felser, C., &#38; Mirhosseini, H. (2018). Rational design of transparent p-type conducting non-oxide materials from high-throughput calculations. <i>Journal of Materials Chemistry C</i>, <i>6</i>(3), 541–549. <a href=\"https://doi.org/10.1039/C7TC05311H \">https://doi.org/10.1039/C7TC05311H </a>","chicago":"Kormath Madam Raghupathy, Ramya, Thomas Kühne, Claudia Felser, and Hossein Mirhosseini. “Rational Design of Transparent P-Type Conducting Non-Oxide Materials from High-Throughput Calculations.” <i>Journal of Materials Chemistry C</i> 6, no. 3 (2018): 541–49. <a href=\"https://doi.org/10.1039/C7TC05311H \">https://doi.org/10.1039/C7TC05311H </a>.","ieee":"R. Kormath Madam Raghupathy, T. Kühne, C. Felser, and H. Mirhosseini, “Rational design of transparent p-type conducting non-oxide materials from high-throughput calculations,” <i>Journal of Materials Chemistry C</i>, vol. 6, no. 3, pp. 541–549, 2018, doi: <a href=\"https://doi.org/10.1039/C7TC05311H \">https://doi.org/10.1039/C7TC05311H </a>.","ama":"Kormath Madam Raghupathy R, Kühne T, Felser C, Mirhosseini H. Rational design of transparent p-type conducting non-oxide materials from high-throughput calculations. <i>Journal of Materials Chemistry C</i>. 2018;6(3):541-549. doi:<a href=\"https://doi.org/10.1039/C7TC05311H \">https://doi.org/10.1039/C7TC05311H </a>"},"page":"541-549","intvolume":"         6","year":"2018","issue":"3","language":[{"iso":"eng"}],"extern":"1","article_type":"original","user_id":"71051","_id":"13208","status":"public","abstract":[{"text":"In this work, high-throughput ab initio calculations are employed to identify the most promising chalcogenide-based semiconductors for p-type transparent conducting materials (TCMs). A large computational data set is investigated by data mining. Binary semiconductors with large band gaps (Eg) and anions that are less electronegative than oxygen are considered. The roles of intrinsic defects and extrinsic dopants are investigated to probe the p-type performance of these semiconductors. Nine novel p-type non-oxide TCMs that have a low hole effective mass, good optical transparency, and hole dopability are proposed (ZnS, ZnSe, ZnTe, MgS, MgTe, GaSe, GaTe, Al2Se3, and BeTe). This study also focuses on a material engineering approach to modulate the electronic properties as a function of the layer thickness and external stress.","lang":"eng"}],"type":"journal_article","publication":"Journal of Materials Chemistry C"},{"year":"2018","citation":{"ama":"Tönsing J. Selbstoptimierung. In: <i>Von Automatismen bis Zersetzung. Wörterbuchprojekt des Graduiertenkollegs Automatismen</i>. ; 2018.","ieee":"J. Tönsing, “Selbstoptimierung,” in <i>Von Automatismen bis Zersetzung. Wörterbuchprojekt des Graduiertenkollegs Automatismen</i>, 2018.","chicago":"Tönsing, Johanna. “Selbstoptimierung.” In <i>Von Automatismen bis Zersetzung. Wörterbuchprojekt des Graduiertenkollegs Automatismen</i>, 2018.","apa":"Tönsing, J. (2018). Selbstoptimierung. In <i>Von Automatismen bis Zersetzung. Wörterbuchprojekt des Graduiertenkollegs Automatismen</i>.","bibtex":"@inbook{Tönsing_2018, title={Selbstoptimierung}, booktitle={Von Automatismen bis Zersetzung. Wörterbuchprojekt des Graduiertenkollegs Automatismen}, author={Tönsing, Johanna}, year={2018} }","short":"J. Tönsing, in: Von Automatismen bis Zersetzung. Wörterbuchprojekt des Graduiertenkollegs Automatismen, 2018.","mla":"Tönsing, Johanna. “Selbstoptimierung.” <i>Von Automatismen bis Zersetzung. Wörterbuchprojekt des Graduiertenkollegs Automatismen</i>, 2018."},"oa":"1","date_updated":"2022-07-26T10:36:47Z","author":[{"full_name":"Tönsing, Johanna","id":"52678","last_name":"Tönsing","first_name":"Johanna"}],"date_created":"2022-07-26T10:36:23Z","title":"Selbstoptimierung","main_file_link":[{"open_access":"1","url":"https://woerterbuch-automatismen.de/selbstoptimierung/"}],"publication":"Von Automatismen bis Zersetzung. Wörterbuchprojekt des Graduiertenkollegs Automatismen","type":"encyclopedia_article","status":"public","_id":"32430","department":[{"_id":"464"}],"user_id":"14932","language":[{"iso":"ger"}]},{"date_created":"2020-09-11T10:04:36Z","user_id":"27973","author":[{"first_name":"Alex","last_name":"Dridger","full_name":"Dridger, Alex"},{"last_name":"Caylak","full_name":"Caylak, Ismail","id":"75","first_name":"Ismail"},{"full_name":"Mahnken, Rolf","last_name":"Mahnken","first_name":"Rolf"},{"first_name":"Eduard","full_name":"Penner, Eduard","id":"27973","last_name":"Penner"}],"date_updated":"2022-07-27T07:07:27Z","_id":"19306","language":[{"iso":"eng"}],"conference":{"start_date":"2018-07-22","name":"13th World Congress in Computational Mechanics ","location":"New York","end_date":"2018-07-27"},"title":"On the connection between possibility theory and probability box theory in structural mechanics","type":"conference","publication":"13th World Congress in Computational Mechanics ","citation":{"ieee":"A. Dridger, I. Caylak, R. Mahnken, and E. Penner, “On the connection between possibility theory and probability box theory in structural mechanics,” presented at the 13th World Congress in Computational Mechanics , New York, 2018.","chicago":"Dridger, Alex, Ismail Caylak, Rolf Mahnken, and Eduard Penner. “On the Connection between Possibility Theory and Probability Box Theory in Structural Mechanics.” In <i>13th World Congress in Computational Mechanics </i>, 2018.","ama":"Dridger A, Caylak I, Mahnken R, Penner E. On the connection between possibility theory and probability box theory in structural mechanics. In: <i>13th World Congress in Computational Mechanics </i>. ; 2018.","apa":"Dridger, A., Caylak, I., Mahnken, R., &#38; Penner, E. (2018). On the connection between possibility theory and probability box theory in structural mechanics. <i>13th World Congress in Computational Mechanics </i>. 13th World Congress in Computational Mechanics , New York.","mla":"Dridger, Alex, et al. “On the Connection between Possibility Theory and Probability Box Theory in Structural Mechanics.” <i>13th World Congress in Computational Mechanics </i>, 2018.","short":"A. Dridger, I. Caylak, R. Mahnken, E. Penner, in: 13th World Congress in Computational Mechanics , 2018.","bibtex":"@inproceedings{Dridger_Caylak_Mahnken_Penner_2018, title={On the connection between possibility theory and probability box theory in structural mechanics}, booktitle={13th World Congress in Computational Mechanics }, author={Dridger, Alex and Caylak, Ismail and Mahnken, Rolf and Penner, Eduard}, year={2018} }"},"status":"public","year":"2018"},{"page":"1273-1285","citation":{"ieee":"I. Caylak, E. Penner, A. Dridger, and R. Mahnken, “Stochastic hyperelastic modeling considering dependency of material parameters,” <i>Computational Mechanics</i>, pp. 1273–1285, 2018, doi: <a href=\"https://doi.org/10.1007/s00466-018-1563-z\">10.1007/s00466-018-1563-z</a>.","chicago":"Caylak, Ismail, Eduard Penner, Alex Dridger, and Rolf Mahnken. “Stochastic Hyperelastic Modeling Considering Dependency of Material Parameters.” <i>Computational Mechanics</i>, 2018, 1273–85. <a href=\"https://doi.org/10.1007/s00466-018-1563-z\">https://doi.org/10.1007/s00466-018-1563-z</a>.","ama":"Caylak I, Penner E, Dridger A, Mahnken R. Stochastic hyperelastic modeling considering dependency of material parameters. <i>Computational Mechanics</i>. Published online 2018:1273-1285. doi:<a href=\"https://doi.org/10.1007/s00466-018-1563-z\">10.1007/s00466-018-1563-z</a>","apa":"Caylak, I., Penner, E., Dridger, A., &#38; Mahnken, R. (2018). Stochastic hyperelastic modeling considering dependency of material parameters. <i>Computational Mechanics</i>, 1273–1285. <a href=\"https://doi.org/10.1007/s00466-018-1563-z\">https://doi.org/10.1007/s00466-018-1563-z</a>","bibtex":"@article{Caylak_Penner_Dridger_Mahnken_2018, title={Stochastic hyperelastic modeling considering dependency of material parameters}, DOI={<a href=\"https://doi.org/10.1007/s00466-018-1563-z\">10.1007/s00466-018-1563-z</a>}, journal={Computational Mechanics}, author={Caylak, Ismail and Penner, Eduard and Dridger, Alex and Mahnken, Rolf}, year={2018}, pages={1273–1285} }","mla":"Caylak, Ismail, et al. “Stochastic Hyperelastic Modeling Considering Dependency of Material Parameters.” <i>Computational Mechanics</i>, 2018, pp. 1273–85, doi:<a href=\"https://doi.org/10.1007/s00466-018-1563-z\">10.1007/s00466-018-1563-z</a>.","short":"I. Caylak, E. Penner, A. Dridger, R. 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