@article{62902,
  author       = {{Revheim, Ingrid and Ballance, Simon and Standal, Adelheid Fretland and Rieder, Anne and Dierkes, Jutta and Buyken, Anette and Gilja, Odd Helge and Hausken, Trygve and Rosendahl-Riise, Hanne}},
  issn         = {{1743-7075}},
  journal      = {{Nutrition & Metabolism}},
  number       = {{1}},
  publisher    = {{Springer Science and Business Media LLC}},
  title        = {{{Correction: The acute effect of a β-glucan-enriched oat bread on gastric emptying, GLP-1 response, and postprandial glycaemia and insulinemia: a randomised crossover trial in healthy adults}}},
  doi          = {{10.1186/s12986-024-00872-2}},
  volume       = {{21}},
  year         = {{2024}},
}

@article{55384,
  author       = {{Schröer, Franz and Schemel, Nele and Osnabrügge, Malin and Schneider, Lea and Tenberge, Claudia}},
  issn         = {{1360-1431}},
  journal      = {{Design and Technology Education: An International Journal}},
  number       = {{1}},
  publisher    = {{Liverpool John Moore's University}},
  title        = {{{Learning to Teach and Teaching to Learn about Robotics at primary level - Professionalization for inclusive technology education integrating Theory and Practice}}},
  volume       = {{29}},
  year         = {{2024}},
}

@inbook{58258,
  author       = {{Fechner, Sabine}},
  booktitle    = {{Wissenschaftsdidaktik als kritische Kommunikationsanalyse - Ein Sammelwerk zur Weiterführung eines Gedankens von Ludwig Huber}},
  editor       = {{Scharlau, Ingrid and Jenert, Tobias}},
  pages        = {{29--44}},
  publisher    = {{Budrich}},
  title        = {{{"Das ist einfach so!" - Eine kritische Analyse von Lehrwerken der Chemie in der Studieneingangsphase}}},
  year         = {{2024}},
}

@inbook{62916,
  author       = {{Zhang, Hongdan and Zuo, Ruixin and Yang, Shidong and Trautmann, Alexander and Song, Xiaohong and Meier, Torsten and Yang, Weifeng}},
  booktitle    = {{High-Order Harmonic Generation in Solids}},
  isbn         = {{9789811279553}},
  publisher    = {{WORLD SCIENTIFIC}},
  title        = {{{Analyzing High-Order Harmonic Generation in Solids Based on Semi-Classical Recollision Models}}},
  doi          = {{10.1142/9789811279560_0006}},
  year         = {{2024}},
}

@inbook{62917,
  author       = {{Reichelt, Matthias and Zuo, Ruixin and Song, Xiaohong and Yang, Weifeng and Meier, Torsten}},
  booktitle    = {{High-Order Harmonic Generation in Solids}},
  isbn         = {{9789811279553}},
  publisher    = {{WORLD SCIENTIFIC}},
  title        = {{{High-Order Harmonic Generation in Semiconductors with Excitonic Effects}}},
  doi          = {{10.1142/9789811279560_0009}},
  year         = {{2024}},
}

@misc{62915,
  author       = {{Meier, Torsten and Ali, Usman and Holthaus, Martin}},
  publisher    = {{LibreCat University}},
  title        = {{{Floquet dynamics of ultracold atoms in optical lattices with a parametrically modulated trapping potential}}},
  doi          = {{10.5281/ZENODO.11935146}},
  year         = {{2024}},
}

@inproceedings{54828,
  author       = {{Fröhleke, Christoph and Janke, Salome and Habig, Sebastian and Fechner, Sabine}},
  booktitle    = {{Frühe naturwissenschaftliche Bildung}},
  editor       = {{van Vorst, Helena}},
  location     = {{Hamburg}},
  pages        = {{642--645}},
  title        = {{{Evaluation eines digitalen Tools zur Laborpraktikumsvorbereitung}}},
  volume       = {{44}},
  year         = {{2024}},
}

@article{61359,
  abstract     = {{<jats:title>Abstract</jats:title><jats:p>The current efficiency records for generating green hydrogen via solar water splitting are held by indium phosphide (InP)‐based photo‐absorbers, protected by TiO<jats:sub>2</jats:sub> layers grown through atomic layer deposition (ALD). InP is also a leading material for photonic integrated circuits and computing, where ultrafast near‐surface behavior is key. A previous study described electronic pathways at the phosphorus‐rich (P‐rich) surface of p‐doped InP(100) using time‐resolved two‐photon photoemission (tr‐2PPE) spectroscopy. Here, the intricate electron pathways of the P‐rich InP surface modified with ALD‐deposited TiO<jats:sub>2</jats:sub> are explored. Photoexcited bulk InP electrons migrate through a bulk‐to‐surface transition cluster of states and surface states and inject into the TiO<jats:sub>2</jats:sub> conduction band (CB). Energy levels and occupation dynamics of CB states in P‐rich InP and TiO<jats:sub>2</jats:sub> adlayers are observed, with discrete states preserved up to 10 nm TiO<jats:sub>2</jats:sub> deposition. Thermalization lifetimes of excited electrons &gt; 0.8 eV above the InP conduction band minimum (CBM) are preserved for layer thicknesses up to 2.5 nm. Annealing at 300 °C to achieve crystalline TiO<jats:sub>2</jats:sub> reconstructions destroys interfacial states, affecting charge transfer. These observations enable innovative engineering of the P‐rich InP/TiO<jats:sub>2</jats:sub> heterointerface, opening new possibilities for studying hot‐carrier extraction, adsorbate effects, surface plasmons, and improving photovoltaic and PEC water‐splitting devices.</jats:p>}},
  author       = {{Diederich, Jonathan and Rojas, Jennifer Velazquez and Paszuk, Agnieszka and Pour, Mohammad Amin Zare and Höhn, Christian and Alvarado, Isaac Azahel Ruiz and Schwarzburg, Klaus and Ostheimer, David and Eichberger, Rainer and Schmidt, Wolf Gero and Hannappel, Thomas and van de Krol, Roel and Friedrich, Dennis}},
  issn         = {{1616-301X}},
  journal      = {{Advanced Functional Materials}},
  number       = {{49}},
  publisher    = {{Wiley}},
  title        = {{{Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface}}},
  doi          = {{10.1002/adfm.202409455}},
  volume       = {{34}},
  year         = {{2024}},
}

@article{60581,
  abstract     = {{<jats:title>Abstract</jats:title>
               <jats:p>The natural band alignments between indium phosphide and the main dioxides of titanium, i.e. rutile, anatase, and brookite as well as amorphous titania are calculated from the branch-point energies of the respective materials. Irrespective of the titania polymorph considered, type-I band alignment is predicted. This may change, however, in dependence on the microscopic interface structure: supercell calculations for amorphous titania grown on P-rich InP(001) surfaces result in a titania conduction band that nearly aligns with that of InP. Depending on the interface specifics, both type-I band and type-II band alignments are observed in the simulations. This agrees with recent experimental findings.</jats:p>}},
  author       = {{Ruiz Alvarado, Isaac Azahel and Dreßler, Christian and Schmidt, Wolf Gero}},
  issn         = {{0953-8984}},
  journal      = {{Journal of Physics: Condensed Matter}},
  number       = {{7}},
  publisher    = {{IOP Publishing}},
  title        = {{{Band alignment at InP/TiO<sub>2</sub> interfaces from density-functional theory}}},
  doi          = {{10.1088/1361-648x/ad9725}},
  volume       = {{37}},
  year         = {{2024}},
}

@article{54867,
  abstract     = {{<jats:p>
Artificial leaves could be the breakthrough technology to overcome the limitations of storage and mobility through the synthesis of chemical fuels from sunlight, which will be an essential component of a sustainable future energy system. However, the realization of efficient solar‐driven artificial leaf structures requires integrated specialized materials such as semiconductor absorbers, catalysts, interfacial passivation, and contact layers. To date, no competitive system has emerged due to a lack of scientific understanding, knowledge‐based design rules, and scalable engineering strategies. Herein, competitive artificial leaf devices for water splitting, focusing on multiabsorber structures to achieve solar‐to‐hydrogen conversion efficiencies exceeding 15%, are discussed. A key challenge is integrating photovoltaic and electrochemical functionalities in a single device. Additionally, optimal electrocatalysts for intermittent operation at photocurrent densities of 10–20 mA cm<jats:sup>−2</jats:sup> must be immobilized on the absorbers with specifically designed interfacial passivation and contact layers, so‐called buried junctions. This minimizes voltage and current losses and prevents corrosive side reactions. Key challenges include understanding elementary steps, identifying suitable materials, and developing synthesis and processing techniques for all integrated components. This is crucial for efficient, robust, and scalable devices. Herein, corresponding research efforts to produce green hydrogen with unassisted solar‐driven (photo‐)electrochemical devices are discussed and reported.</jats:p>}},
  author       = {{Hannappel, Thomas and Shekarabi, Sahar and Jaegermann, Wolfram and Runge, Erich and Hofmann, Jan Philipp and van de Krol, Roel and May, Matthias M. and Paszuk, Agnieszka and Hess, Franziska and Bergmann, Arno and Bund, Andreas and Cierpka, Christian and Dreßler, Christian and Dionigi, Fabio and Friedrich, Dennis and Favaro, Marco and Krischok, Stefan and Kurniawan, Mario and Lüdge, Kathy and Lei, Yong and Roldán Cuenya, Beatriz and Schaaf, Peter and Schmidt‐Grund, Rüdiger and Schmidt, Wolf Gero and Strasser, Peter and Unger, Eva and Vasquez Montoya, Manuel F. and Wang, Dong and Zhang, Hongbin}},
  issn         = {{2367-198X}},
  journal      = {{Solar RRL}},
  number       = {{11}},
  publisher    = {{Wiley}},
  title        = {{{Integration of Multijunction Absorbers and Catalysts for Efficient Solar‐Driven Artificial Leaf Structures: A Physical and Materials Science Perspective}}},
  doi          = {{10.1002/solr.202301047}},
  volume       = {{8}},
  year         = {{2024}},
}

@article{54868,
  abstract     = {{<jats:title>Abstract</jats:title><jats:p>Most properties of solid materials are defined by their internal electric field and charge density distributions which so far are difficult to measure with high spatial resolution. Especially for 2D materials, the atomic electric fields influence the optoelectronic properties. In this study, the atomic‐scale electric field and charge density distribution of WSe<jats:sub>2</jats:sub> bi‐ and trilayers are revealed using an emerging microscopy technique, differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM). For pristine material, a higher positive charge density located at the selenium atomic columns compared to the tungsten atomic columns is obtained and tentatively explained by a coherent scattering effect. Furthermore, the change in the electric field distribution induced by a missing selenium atomic column is investigated. A characteristic electric field distribution in the vicinity of the defect with locally reduced magnitudes compared to the pristine lattice is observed. This effect is accompanied by a considerable inward relaxation of the surrounding lattice, which according to first principles DFT calculation is fully compatible with a missing column of Se atoms. This shows that DPC imaging, as an electric field sensitive technique, provides additional and remarkable information to the otherwise only structural analysis obtained with conventional STEM imaging.</jats:p>}},
  author       = {{Groll, Maja and Bürger, Julius and Caltzidis, Ioannis and Jöns, Klaus D. and Schmidt, Wolf Gero and Gerstmann, Uwe and Lindner, Jörg K. N.}},
  issn         = {{1613-6810}},
  journal      = {{Small}},
  publisher    = {{Wiley}},
  title        = {{{DFT‐Assisted Investigation of the Electric Field and Charge Density Distribution of Pristine and Defective 2D WSe<sub>2</sub> by Differential Phase Contrast Imaging}}},
  doi          = {{10.1002/smll.202311635}},
  year         = {{2024}},
}

@article{60582,
  abstract     = {{<jats:title>Abstract</jats:title><jats:p>The current efficiency records for generating green hydrogen via solar water splitting are held by indium phosphide (InP)‐based photo‐absorbers, protected by TiO<jats:sub>2</jats:sub> layers grown through atomic layer deposition (ALD). InP is also a leading material for photonic integrated circuits and computing, where ultrafast near‐surface behavior is key. A previous study described electronic pathways at the phosphorus‐rich (P‐rich) surface of p‐doped InP(100) using time‐resolved two‐photon photoemission (tr‐2PPE) spectroscopy. Here, the intricate electron pathways of the P‐rich InP surface modified with ALD‐deposited TiO<jats:sub>2</jats:sub> are explored. Photoexcited bulk InP electrons migrate through a bulk‐to‐surface transition cluster of states and surface states and inject into the TiO<jats:sub>2</jats:sub> conduction band (CB). Energy levels and occupation dynamics of CB states in P‐rich InP and TiO<jats:sub>2</jats:sub> adlayers are observed, with discrete states preserved up to 10 nm TiO<jats:sub>2</jats:sub> deposition. Thermalization lifetimes of excited electrons &gt; 0.8 eV above the InP conduction band minimum (CBM) are preserved for layer thicknesses up to 2.5 nm. Annealing at 300 °C to achieve crystalline TiO<jats:sub>2</jats:sub> reconstructions destroys interfacial states, affecting charge transfer. These observations enable innovative engineering of the P‐rich InP/TiO<jats:sub>2</jats:sub> heterointerface, opening new possibilities for studying hot‐carrier extraction, adsorbate effects, surface plasmons, and improving photovoltaic and PEC water‐splitting devices.</jats:p>}},
  author       = {{Diederich, Jonathan and Rojas, Jennifer Velazquez and Paszuk, Agnieszka and Pour, Mohammad Amin Zare and Höhn, Christian and Ruiz Alvarado, Isaac Azahel and Schwarzburg, Klaus and Ostheimer, David and Eichberger, Rainer and Schmidt, Wolf Gero and Hannappel, Thomas and van de Krol, Roel and Friedrich, Dennis}},
  issn         = {{1616-301X}},
  journal      = {{Advanced Functional Materials}},
  number       = {{49}},
  publisher    = {{Wiley}},
  title        = {{{Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface}}},
  doi          = {{10.1002/adfm.202409455}},
  volume       = {{34}},
  year         = {{2024}},
}

@article{54856,
  abstract     = {{<jats:title>Abstract</jats:title>
               <jats:p>Theoretical spectroscopy based on double perturbation theory is typically challenged by systems with large orbital hyperfine splitting. Therefore, we here derive a rigorous, non-perturbative scheme starting from Dirac’s equation which allows to calculate the contribution of the orbital HFI for complex structures including heavy atoms with strong spin-orbit coupling (SOC). Using the PAW formalism, the method has been implemented in the software package Quantum ESPRESSO. We show that the ‘orbital part’ actually scales with SOC strength if orbital quenching is hindered by low local symmetry, i.e. in case of dimers or atoms at surfaces. This holds true in particular when the unpaired electron is localized in quasi-atomic <jats:italic>p</jats:italic>-like orbitals. Here, the orbital part is by far not negligible, but becomes dominant by surpassing the dipolar contribution by a factor of five.</jats:p>}},
  author       = {{Franzke, Katharina and Schmidt, Wolf Gero and Gerstmann, Uwe}},
  issn         = {{1742-6588}},
  journal      = {{Journal of Physics: Conference Series}},
  number       = {{1}},
  publisher    = {{IOP Publishing}},
  title        = {{{Relativistic calculation of the orbital hyperfine splitting in complex microscopic structures}}},
  doi          = {{10.1088/1742-6596/2701/1/012094}},
  volume       = {{2701}},
  year         = {{2024}},
}

@article{54866,
  author       = {{Diederich, Jonathan and Velasquez Rojas, Jennifer and Zare Pour, Mohammad Amin and Ruiz Alvarado, Isaac Azahel and Paszuk, Agnieszka and Sciotto, Rachele and Höhn, Christian and Schwarzburg, Klaus and Ostheimer, David and Eichberger, Rainer and Schmidt, Wolf Gero and Hannappel, Thomas and van de Krol, Roel and Friedrich, Dennis}},
  issn         = {{0002-7863}},
  journal      = {{Journal of the American Chemical Society}},
  number       = {{13}},
  pages        = {{8949--8960}},
  publisher    = {{American Chemical Society (ACS)}},
  title        = {{{Unraveling Electron Dynamics in p-type Indium Phosphide (100): A Time-Resolved Two-Photon Photoemission Study}}},
  doi          = {{10.1021/jacs.3c12487}},
  volume       = {{146}},
  year         = {{2024}},
}

@article{54855,
  abstract     = {{<jats:p>Density-functional theory calculations on P-rich InP(001):H surfaces are presented. Depending on temperature, pressure and substrate doping, hydrogen desorption or adsorption will occur and influence the surface electronic properties. For p-doped samples, the charge transition levels of the P dangling bond defects resulting from H desorption will lead to Fermi level pinning in the lower half of the band gap. This explains recent experimental data. For n-doped substrates, H-deficient surfaces are the ground-state structure. This will lead to Fermi level pinning below the bulk conduction band minimum. Surface defects resulting from the adsorption of additional hydrogen can be expected as well, but affect the surface electronic properties less than H desorption.</jats:p>}},
  author       = {{Sciotto, Rachele and Ruiz Alvarado, Isaac Azahel and Schmidt, Wolf Gero}},
  issn         = {{2571-9637}},
  journal      = {{Surfaces}},
  number       = {{1}},
  pages        = {{79--87}},
  publisher    = {{MDPI AG}},
  title        = {{{Substrate Doping and Defect Influence on P-Rich InP(001):H Surface Properties}}},
  doi          = {{10.3390/surfaces7010006}},
  volume       = {{7}},
  year         = {{2024}},
}

@article{54869,
  author       = {{Pfnür, H. and Tegenkamp, C. and Sanna, S. and Jeckelmann, E. and Horn-von Hoegen, M. and Bovensiepen, U. and Esser, N. and Schmidt, Wolf Gero and Dähne, M. and Wippermann, S. and Bechstedt, F. and Bode, M. and Claessen, R. and Ernstorfer, R. and Hogan, C. and Ligges, M. and Pucci, A. and Schäfer, J. and Speiser, E. and Wolf, M. and Wollschläger, J.}},
  issn         = {{0167-5729}},
  journal      = {{Surface Science Reports}},
  number       = {{2}},
  publisher    = {{Elsevier BV}},
  title        = {{{Atomic wires on substrates: Physics between one and two dimensions}}},
  doi          = {{10.1016/j.surfrep.2024.100629}},
  volume       = {{79}},
  year         = {{2024}},
}

@article{54865,
  author       = {{Krenz, Marvin and Gerstmann, Uwe and Schmidt, Wolf Gero}},
  issn         = {{0031-9007}},
  journal      = {{Physical Review Letters}},
  number       = {{7}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Defect-Assisted Exciton Transfer across the Tetracene-Si(111):H Interface}}},
  doi          = {{10.1103/physrevlett.132.076201}},
  volume       = {{132}},
  year         = {{2024}},
}

@article{62868,
  abstract     = {{<jats:p>We theoretically investigate strategies for the deterministic creation of trains of time-bin entangled photons using an individual quantum emitter described by a Λ-type electronic system. We explicitly demonstrate the theoretical generation of linear cluster states with substantial numbers of entangled photonic qubits in full microscopic numerical simulations. The underlying scheme is based on the manipulation of ground state coherences through precise optical driving. One important finding is that the most easily accessible quality metrics, the achievable rotation fidelities, fall short in assessing the actual quantum correlations of the emitted photons in the face of losses. To address this, we explicitly calculate stabilizer generator expectation values as a superior gauge for the quantum properties of the generated many-photon state. With widespread applicability in other emitter and excitation–emission schemes also, our work lays the conceptual foundations for an in-depth practical analysis of time-bin entanglement based on full numerical simulations with predictive capabilities for realistic systems and setups, including losses and imperfections. The specific results shown in the present work illustrate that with controlled minimization of losses and realistic system parameters for quantum-dot type systems, useful linear cluster states of significant lengths can be generated in the calculations, discussing the possibility of scalability for quantum information processing endeavors.</jats:p>}},
  author       = {{Bauch, David and Köcher, Nikolas and Heinisch, Nils and Schumacher, Stefan}},
  issn         = {{2835-0103}},
  journal      = {{APL Quantum}},
  number       = {{3}},
  publisher    = {{AIP Publishing}},
  title        = {{{Time-bin entanglement in the deterministic generation of linear photonic cluster states}}},
  doi          = {{10.1063/5.0214197}},
  volume       = {{1}},
  year         = {{2024}},
}

@article{62942,
  abstract     = {{<jats:title>Abstract</jats:title><jats:p>Nanostructured bilayer thin films with superhydrophobic and superhydrophilic surfaces were prepared using Ti6Al4V alloy substrates which allowed for the comparative analysis of polyvinyl acetate (PVAc) particle adsorption as a function of the interface structure. The PVAc particles were obtained from emulsion polymerization of vinyl acetate. A superhydrophilic TiO<jats:sub>2</jats:sub> nanofiber-based 3D network was created on the Ti6Al4V alloy substrate by application of a hydrothermal method. Subsequent UV-grafting of ultra-thin polydimethylsiloxane (PDMS) layers resulted in a superhydrophobic surface. The modification steps were followed via Diffuse Reflectance Infrared Fourier Transform Spectroscopy, X-ray Photoelectron Spectroscopy, Field Emission-Scanning Electron Microscopy, contact angle and Electrochemical Impedance Spectroscopy. A mechanism for the adsorption of PVAc at the two electrolyte/substrate interfaces could be revealed.</jats:p>}},
  author       = {{Neßlinger, Vanessa and Atlanov, Jan and Grundmeier, Guido}},
  issn         = {{3004-9261}},
  journal      = {{Discover Applied Sciences}},
  number       = {{6}},
  publisher    = {{Springer Science and Business Media LLC}},
  title        = {{{Interactions of polyvinyl acetate dispersions with nanostructured superhydrophilic and superhydrophobic Ti6Al4V alloy surfaces}}},
  doi          = {{10.1007/s42452-024-05916-z}},
  volume       = {{6}},
  year         = {{2024}},
}

@article{57539,
  abstract     = {{The study validates an instrument for assessing digital competencies of teachers in vocational education, based on a TPACK extension which considers the knowledge sources of the dual subject matter. For validation, student teachers of vocational and business education in their first bachelor’s semester (n=112) were surveyed. In addition, student teachers in their first master’s semester (n=94) were surveyed to analyze the nomological validity of the instrument. The results confirm the assumed subdivision of content knowledge into the reference systems of profession and discipline. The model fit (χ2/df=1.284; RMSEA=0.051; CFI=0.948; SRMR=0.061) and the internal consistency of the scales can be rated as good. The nomological analysis of the instrument shows theoretically plausible results.}},
  author       = {{Sänger, Niklas}},
  journal      = {{Zeitschrift für Berufs- und Wirtschaftspädagogik}},
  number       = {{2}},
  pages        = {{312--349}},
  title        = {{{Entwicklung und Validierung eines Instruments zur differenzierten Erfassung disziplinbezogener und berufsbezogener digitaler Kompetenzen von Lehrkräften in der beruflichen Bildung}}},
  doi          = {{https://doi.org/10.25162/zbw-2024-0013}},
  volume       = {{120}},
  year         = {{2024}},
}