[{"status":"public","title":"On the degradation of organic field-effect transistors","year":"2005","author":[{"first_name":"Ch.","last_name":"Pannemann","full_name":"Pannemann, Ch."},{"full_name":"Diekmann, T.","last_name":"Diekmann","first_name":"T."},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"}],"publication_status":"published","date_updated":"2023-03-22T10:36:03Z","_id":"39848","publisher":"IEEE","language":[{"iso":"eng"}],"user_id":"20179","doi":"10.1109/icm.2004.1434210","publication":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","citation":{"ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “On the degradation of organic field-effect transistors,” 2005, doi: <a href=\"https://doi.org/10.1109/icm.2004.1434210\">10.1109/icm.2004.1434210</a>.","apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2005). On the degradation of organic field-effect transistors. <i>Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.</i> <a href=\"https://doi.org/10.1109/icm.2004.1434210\">https://doi.org/10.1109/icm.2004.1434210</a>","chicago":"Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “On the Degradation of Organic Field-Effect Transistors.” In <i>Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.</i> IEEE, 2005. <a href=\"https://doi.org/10.1109/icm.2004.1434210\">https://doi.org/10.1109/icm.2004.1434210</a>.","short":"Ch. Pannemann, T. Diekmann, U. Hilleringmann, in: Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004., IEEE, 2005.","mla":"Pannemann, Ch., et al. “On the Degradation of Organic Field-Effect Transistors.” <i>Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.</i>, IEEE, 2005, doi:<a href=\"https://doi.org/10.1109/icm.2004.1434210\">10.1109/icm.2004.1434210</a>.","bibtex":"@inproceedings{Pannemann_Diekmann_Hilleringmann_2005, title={On the degradation of organic field-effect transistors}, DOI={<a href=\"https://doi.org/10.1109/icm.2004.1434210\">10.1109/icm.2004.1434210</a>}, booktitle={Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.}, publisher={IEEE}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2005} }","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. On the degradation of organic field-effect transistors. In: <i>Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.</i> IEEE; 2005. doi:<a href=\"https://doi.org/10.1109/icm.2004.1434210\">10.1109/icm.2004.1434210</a>"},"date_created":"2023-01-25T08:38:15Z","type":"conference","department":[{"_id":"59"}]},{"language":[{"iso":"eng"}],"doi":"10.1557/jmr.2004.0267","title":"Degradation of organic field-effect transistors made of pentacene","year":"2005","author":[{"first_name":"Ch.","last_name":"Pannemann","full_name":"Pannemann, Ch."},{"last_name":"Diekmann","first_name":"T.","full_name":"Diekmann, T."},{"id":"20179","full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"}],"publication_identifier":{"issn":["0884-2914","2044-5326"]},"publication_status":"published","date_updated":"2023-03-22T10:38:56Z","intvolume":"        19","date_created":"2023-01-24T09:24:41Z","keyword":["Mechanical Engineering","Mechanics of Materials","Condensed Matter Physics","General Materials Science"],"type":"journal_article","department":[{"_id":"59"}],"issue":"7","publication":"Journal of Materials Research","abstract":[{"lang":"eng","text":"<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>"}],"page":"1999-2002","publisher":"Springer Science and Business Media LLC","_id":"39349","user_id":"20179","volume":19,"status":"public","citation":{"ieee":"Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Degradation of organic field-effect transistors made of pentacene,” <i>Journal of Materials Research</i>, vol. 19, no. 7, pp. 1999–2002, 2005, doi: <a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>.","apa":"Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2005). Degradation of organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>, <i>19</i>(7), 1999–2002. <a href=\"https://doi.org/10.1557/jmr.2004.0267\">https://doi.org/10.1557/jmr.2004.0267</a>","chicago":"Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Degradation of Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i> 19, no. 7 (2005): 1999–2002. <a href=\"https://doi.org/10.1557/jmr.2004.0267\">https://doi.org/10.1557/jmr.2004.0267</a>.","short":"Ch. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research 19 (2005) 1999–2002.","mla":"Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>.","bibtex":"@article{Pannemann_Diekmann_Hilleringmann_2005, title={Degradation of organic field-effect transistors made of pentacene}, volume={19}, DOI={<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>}, number={7}, journal={Journal of Materials Research}, publisher={Springer Science and Business Media LLC}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}, year={2005}, pages={1999–2002} }","ama":"Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>. 2005;19(7):1999-2002. doi:<a href=\"https://doi.org/10.1557/jmr.2004.0267\">10.1557/jmr.2004.0267</a>"}},{"year":"2005","title":"Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics","author":[{"full_name":"Scharnberg, M.","first_name":"M.","last_name":"Scharnberg"},{"first_name":"J.","last_name":"Hu","full_name":"Hu, J."},{"full_name":"Kanzow, J.","first_name":"J.","last_name":"Kanzow"},{"full_name":"Rätzke, K.","last_name":"Rätzke","first_name":"K."},{"first_name":"R.","last_name":"Adelung","full_name":"Adelung, R."},{"last_name":"Faupel","first_name":"F.","full_name":"Faupel, F."},{"full_name":"Pannemann, C.","last_name":"Pannemann","first_name":"C."},{"id":"20179","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich","last_name":"Hilleringmann"},{"first_name":"S.","last_name":"Meyer","full_name":"Meyer, S."},{"full_name":"Pflaum, J.","last_name":"Pflaum","first_name":"J."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2023-03-22T10:34:05Z","intvolume":"        86","article_number":"024104","language":[{"iso":"eng"}],"doi":"10.1063/1.1849845","publication":"Applied Physics Letters","issue":"2","date_created":"2023-01-24T12:21:59Z","keyword":["Physics and Astronomy (miscellaneous)"],"type":"journal_article","department":[{"_id":"59"}],"status":"public","publisher":"AIP Publishing","_id":"39574","user_id":"20179","volume":86,"citation":{"mla":"Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied Physics Letters</i>, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>.","bibtex":"@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005, title={Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>}, number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}, year={2005} }","ama":"Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. <i>Applied Physics Letters</i>. 2005;86(2). doi:<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>","ieee":"M. Scharnberg <i>et al.</i>, “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,” <i>Applied Physics Letters</i>, vol. 86, no. 2, Art. no. 024104, 2005, doi: <a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>.","apa":"Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann, C., Hilleringmann, U., Meyer, S., &#38; Pflaum, J. (2005). Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. <i>Applied Physics Letters</i>, <i>86</i>(2), Article 024104. <a href=\"https://doi.org/10.1063/1.1849845\">https://doi.org/10.1063/1.1849845</a>","short":"M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).","chicago":"Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied Physics Letters</i> 86, no. 2 (2005). <a href=\"https://doi.org/10.1063/1.1849845\">https://doi.org/10.1063/1.1849845</a>."}},{"date_updated":"2023-03-22T10:34:27Z","publication_status":"published","author":[{"first_name":"R.","last_name":"Scholz","full_name":"Scholz, R."},{"full_name":"Müller, A.-D.","last_name":"Müller","first_name":"A.-D."},{"full_name":"Müller, F.","last_name":"Müller","first_name":"F."},{"last_name":"Thurzo","first_name":"I.","full_name":"Thurzo, I."},{"full_name":"Paez, B. A.","last_name":"Paez","first_name":"B. A."},{"first_name":"L.","last_name":"Mancera","full_name":"Mancera, L."},{"full_name":"Zahn, D. R. T.","first_name":"D. R. T.","last_name":"Zahn"},{"last_name":"Pannemann","first_name":"C.","full_name":"Pannemann, C."},{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"}],"publication_identifier":{"issn":["0277-786X"]},"year":"2005","status":"public","title":"Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry","editor":[{"full_name":"Bao, Zhenan","last_name":"Bao","first_name":"Zhenan"},{"first_name":"David J.","last_name":"Gundlach","full_name":"Gundlach, David J."}],"doi":"10.1117/12.617004","user_id":"20179","_id":"39835","publisher":"SPIE","language":[{"iso":"eng"}],"citation":{"bibtex":"@inproceedings{Scholz_Müller_Müller_Thurzo_Paez_Mancera_Zahn_Pannemann_Hilleringmann_2005, title={Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}, DOI={<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>}, booktitle={SPIE Proceedings}, publisher={SPIE}, author={Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}, editor={Bao, Zhenan and Gundlach, David J.}, year={2005} }","ama":"Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. <i>SPIE Proceedings</i>. SPIE; 2005. doi:<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>","mla":"Scholz, R., et al. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach, SPIE, 2005, doi:<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>.","chicago":"Scholz, R., A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera, D. R. T. Zahn, C. Pannemann, and Ulrich Hilleringmann. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” In <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach. SPIE, 2005. <a href=\"https://doi.org/10.1117/12.617004\">https://doi.org/10.1117/12.617004</a>.","short":"R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: Z. Bao, D.J. Gundlach (Eds.), SPIE Proceedings, SPIE, 2005.","ieee":"R. Scholz <i>et al.</i>, “Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry,” in <i>SPIE Proceedings</i>, 2005, doi: <a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>.","apa":"Scholz, R., Müller, A.-D., Müller, F., Thurzo, I., Paez, B. A., Mancera, L., Zahn, D. R. T., Pannemann, C., &#38; Hilleringmann, U. (2005). Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In Z. Bao &#38; D. J. Gundlach (Eds.), <i>SPIE Proceedings</i>. SPIE. <a href=\"https://doi.org/10.1117/12.617004\">https://doi.org/10.1117/12.617004</a>"},"publication":"SPIE Proceedings","department":[{"_id":"59"}],"type":"conference","date_created":"2023-01-25T08:20:11Z"},{"author":[{"first_name":"R.","last_name":"Scholz","full_name":"Scholz, R."},{"first_name":"A.-D.","last_name":"Müller","full_name":"Müller, A.-D."},{"first_name":"F.","last_name":"Müller","full_name":"Müller, F."},{"full_name":"Thurzo, I.","last_name":"Thurzo","first_name":"I."},{"last_name":"Paez","first_name":"B. A.","full_name":"Paez, B. A."},{"full_name":"Mancera, L.","first_name":"L.","last_name":"Mancera"},{"last_name":"Zahn","first_name":"D. R. T.","full_name":"Zahn, D. R. T."},{"last_name":"Pannemann","first_name":"C.","full_name":"Pannemann, C."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"}],"publication_identifier":{"issn":["0277-786X"]},"status":"public","year":"2005","title":"Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry","publication_status":"published","date_updated":"2023-03-22T10:32:51Z","_id":"39834","publisher":"SPIE","language":[{"iso":"eng"}],"editor":[{"full_name":"Bao, Zhenan","first_name":"Zhenan","last_name":"Bao"},{"full_name":"Gundlach, David J.","first_name":"David J.","last_name":"Gundlach"}],"user_id":"20179","doi":"10.1117/12.617004","citation":{"mla":"Scholz, R., et al. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach, SPIE, 2005, doi:<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>.","ama":"Scholz R, Müller A-D, Müller F, et al. Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In: Bao Z, Gundlach DJ, eds. <i>SPIE Proceedings</i>. SPIE; 2005. doi:<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>","bibtex":"@inproceedings{Scholz_Müller_Müller_Thurzo_Paez_Mancera_Zahn_Pannemann_Hilleringmann_2005, title={Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry}, DOI={<a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>}, booktitle={SPIE Proceedings}, publisher={SPIE}, author={Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich}, editor={Bao, Zhenan and Gundlach, David J.}, year={2005} }","apa":"Scholz, R., Müller, A.-D., Müller, F., Thurzo, I., Paez, B. A., Mancera, L., Zahn, D. R. T., Pannemann, C., &#38; Hilleringmann, U. (2005). Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In Z. Bao &#38; D. J. Gundlach (Eds.), <i>SPIE Proceedings</i>. SPIE. <a href=\"https://doi.org/10.1117/12.617004\">https://doi.org/10.1117/12.617004</a>","ieee":"R. Scholz <i>et al.</i>, “Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry,” in <i>SPIE Proceedings</i>, 2005, doi: <a href=\"https://doi.org/10.1117/12.617004\">10.1117/12.617004</a>.","short":"R. Scholz, A.-D. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: Z. Bao, D.J. Gundlach (Eds.), SPIE Proceedings, SPIE, 2005.","chicago":"Scholz, R., A.-D. Müller, F. Müller, I. Thurzo, B. A. Paez, L. Mancera, D. R. T. Zahn, C. Pannemann, and Ulrich Hilleringmann. “Comparison between the Charge Carrier Mobilities in Pentacene OFET Structures as Obtained from Electrical Characterization and Potentiometry.” In <i>SPIE Proceedings</i>, edited by Zhenan Bao and David J. Gundlach. SPIE, 2005. <a href=\"https://doi.org/10.1117/12.617004\">https://doi.org/10.1117/12.617004</a>."},"publication":"SPIE Proceedings","date_created":"2023-01-25T08:19:15Z","department":[{"_id":"59"}],"type":"conference"},{"type":"conference","department":[{"_id":"48"},{"_id":"63"}],"place":"Tilburg, Netherlands","date_created":"2019-08-28T11:58:24Z","publication":"{GOR/NGB Conference Tilburg 2004}","citation":{"mla":"Liu Jing, Michelle, et al. “Sensor Networks with More Features Using Less Hardware.” <i>{GOR/NGB Conference Tilburg 2004}</i>, 2004.","bibtex":"@inproceedings{Liu Jing_Ruehrup_Schindelhauer_Volbert_Dierkes_Bellgardt_Ibers_Hilleringmann_2004, place={Tilburg, Netherlands}, title={Sensor Networks with More Features Using Less Hardware}, booktitle={{GOR/NGB Conference Tilburg 2004}}, author={Liu Jing, Michelle and Ruehrup, Stefan and Schindelhauer, Christian and Volbert, Klaus and Dierkes, Martin and Bellgardt, Andreas and Ibers, Rüdiger and Hilleringmann, Ulrich}, year={2004} }","ama":"Liu Jing M, Ruehrup S, Schindelhauer C, et al. Sensor Networks with More Features Using Less Hardware. In: <i>{GOR/NGB Conference Tilburg 2004}</i>. Tilburg, Netherlands; 2004.","ieee":"M. Liu Jing <i>et al.</i>, “Sensor Networks with More Features Using Less Hardware,” in <i>{GOR/NGB Conference Tilburg 2004}</i>, 2004.","apa":"Liu Jing, M., Ruehrup, S., Schindelhauer, C., Volbert, K., Dierkes, M., Bellgardt, A., … Hilleringmann, U. (2004). Sensor Networks with More Features Using Less Hardware. In <i>{GOR/NGB Conference Tilburg 2004}</i>. Tilburg, Netherlands.","chicago":"Liu Jing, Michelle, Stefan Ruehrup, Christian Schindelhauer, Klaus Volbert, Martin Dierkes, Andreas Bellgardt, Rüdiger Ibers, and Ulrich Hilleringmann. “Sensor Networks with More Features Using Less Hardware.” In <i>{GOR/NGB Conference Tilburg 2004}</i>. Tilburg, Netherlands, 2004.","short":"M. Liu Jing, S. Ruehrup, C. Schindelhauer, K. Volbert, M. Dierkes, A. Bellgardt, R. Ibers, U. Hilleringmann, in: {GOR/NGB Conference Tilburg 2004}, Tilburg, Netherlands, 2004."},"user_id":"14955","_id":"13071","language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:51:28Z","title":"Sensor Networks with More Features Using Less Hardware","year":"2004","status":"public","author":[{"full_name":"Liu Jing, Michelle","first_name":"Michelle","last_name":"Liu Jing"},{"last_name":"Ruehrup","first_name":"Stefan","full_name":"Ruehrup, Stefan"},{"full_name":"Schindelhauer, Christian","last_name":"Schindelhauer","first_name":"Christian"},{"last_name":"Volbert","first_name":"Klaus","full_name":"Volbert, Klaus"},{"last_name":"Dierkes","first_name":"Martin","full_name":"Dierkes, Martin"},{"last_name":"Bellgardt","first_name":"Andreas","full_name":"Bellgardt, Andreas"},{"first_name":"Rüdiger","last_name":"Ibers","full_name":"Ibers, Rüdiger","id":"659"},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich"}]},{"user_id":"20179","doi":"10.1007/978-3-322-94072-8_5","_id":"39850","publisher":"Vieweg+Teubner Verlag","language":[{"iso":"eng"}],"page":"65–90","date_updated":"2023-03-21T10:05:00Z","publication_identifier":{"isbn":["978-3-322-94072-8"]},"author":[{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"}],"year":"2004","status":"public","title":"Ätztechnik","department":[{"_id":"59"}],"type":"book_chapter","date_created":"2023-01-25T08:39:18Z","place":"Wiesbaden","abstract":[{"text":"In der Halbleitertechnologie werden die Materialien Siliziumdioxid, Siliziumnitrid, Polysilizium, Silizium, Aluminium sowie Wolfram und Titan mit ihren jeweiligen Metallsiliziden geätzt. Die Ätztechnik dient dabei zum ganzflächigen Abtragen eines Materials oder zum Übertragen der Struktur des lithografisch erzeugten Lackmusters in die darunter liegende Schicht. Für diese Aufgabe bieten sich einerseits nasschemische Ätzlösungen an, zum anderen eignen sich speziell entwickelte Trockenätzverfahren zur geforderten präzisen Strukturübertragung vom Lack in das Material.","lang":"eng"}],"citation":{"ieee":"U. Hilleringmann, “Ätztechnik,” in <i>Silizium-Halbleitertechnologie</i>, Wiesbaden: Vieweg+Teubner Verlag, 2004, pp. 65–90.","apa":"Hilleringmann, U. (2004). Ätztechnik. In <i>Silizium-Halbleitertechnologie</i> (pp. 65–90). Vieweg+Teubner Verlag. <a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">https://doi.org/10.1007/978-3-322-94072-8_5</a>","chicago":"Hilleringmann, Ulrich. “Ätztechnik.” In <i>Silizium-Halbleitertechnologie</i>, 65–90. Wiesbaden: Vieweg+Teubner Verlag, 2004. <a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">https://doi.org/10.1007/978-3-322-94072-8_5</a>.","short":"U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2004, pp. 65–90.","mla":"Hilleringmann, Ulrich. “Ätztechnik.” <i>Silizium-Halbleitertechnologie</i>, Vieweg+Teubner Verlag, 2004, pp. 65–90, doi:<a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">10.1007/978-3-322-94072-8_5</a>.","bibtex":"@inbook{Hilleringmann_2004, place={Wiesbaden}, title={Ätztechnik}, DOI={<a href=\"https://doi.org/10.1007/978-3-322-94072-8_5\">10.1007/978-3-322-94072-8_5</a>}, booktitle={Silizium-Halbleitertechnologie}, publisher={Vieweg+Teubner Verlag}, author={Hilleringmann, Ulrich}, year={2004}, pages={65–90} }","ama":"Hilleringmann U. Ätztechnik. In: <i>Silizium-Halbleitertechnologie</i>. 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