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PCIM Europe 2023. PCIM Europe 2023, Nürnberg.","ama":"Urbaneck D, Schafmeister F, Böcker J. Advanced Synchronous Rectification for an IGBT-Based ZCS LLC Converter with High Output Currents for a 2 kW Automotive DC-DC Stage. In: PCIM Europe 2023. ; 2023.","short":"D. Urbaneck, F. Schafmeister, J. Böcker, in: PCIM Europe 2023, 2023.","chicago":"Urbaneck, Daniel, Frank Schafmeister, and Joachim Böcker. “Advanced Synchronous Rectification for an IGBT-Based ZCS LLC Converter with High Output Currents for a 2 KW Automotive DC-DC Stage.” In PCIM Europe 2023, 2023.","ieee":"D. Urbaneck, F. Schafmeister, and J. Böcker, “Advanced Synchronous Rectification for an IGBT-Based ZCS LLC Converter with High Output Currents for a 2 kW Automotive DC-DC Stage,” presented at the PCIM Europe 2023, Nürnberg, 2023.","mla":"Urbaneck, Daniel, et al. “Advanced Synchronous Rectification for an IGBT-Based ZCS LLC Converter with High Output Currents for a 2 KW Automotive DC-DC Stage.” PCIM Europe 2023, 2023.","bibtex":"@inproceedings{Urbaneck_Schafmeister_Böcker_2023, title={Advanced Synchronous Rectification for an IGBT-Based ZCS LLC Converter with High Output Currents for a 2 kW Automotive DC-DC Stage}, booktitle={PCIM Europe 2023}, author={Urbaneck, Daniel and Schafmeister, Frank and Böcker, Joachim}, year={2023} }"},"type":"conference","language":[{"iso":"eng"}],"date_updated":"2023-08-02T11:30:23Z","_id":"46269","conference":{"end_date":"2023-05-11","start_date":"2023-05-09","name":"PCIM Europe 2023","location":"Nürnberg"},"author":[{"first_name":"Daniel","full_name":"Urbaneck, Daniel","last_name":"Urbaneck","id":"60223"},{"full_name":"Schafmeister, Frank","first_name":"Frank","last_name":"Schafmeister"},{"first_name":"Joachim","full_name":"Böcker, Joachim","last_name":"Böcker"}],"publication":"PCIM Europe 2023","keyword":["LLC Converter","IGBT","ZCS","Synchronous Rectification"],"publication_status":"published","status":"public","date_created":"2023-08-02T11:27:32Z","abstract":[{"lang":"eng","text":"State-of-the-art LLC resonant converters use MOSFETs in their inverter stage, which allows high switching frequencies and thus the use of compact magnetic components. The large parasitic output capacitance and the poor reverse-recovery behaviour of the inherent body diode of high-voltage (600 V) silicon MOSFETs require soft switching, i.e. zero-voltage switching (ZVS). Otherwise, the high turn-on switching losses would lead to excessive heating and ultimately to the destruction of the switch. Therefore, MOSFET-based LLC converters are operated in the so-called inductive region only, which enables ZVS. The use of robust and cost-effective IGBTs instead of MOSFETs is particularly advantageous for automotive applications, since in addition to high reliability low costs are an important objective here. Since IGBTs are characterized by dominant turn-off losses and generally higher switching losses compared to MOSFETs, the aim is to operate them with zero-current switching (ZCS) and at low switching frequencies below the resonance frequency. In this region also the voltage transfer characteristic is steeper, which qualifies for applications with a strongly varying input-to-output voltage ratio, such as given for automotive on-board DC-DC converters connecting the (high-voltage) traction battery with the (12 V) auxiliary battery. In this paper, a stress value analysis based on a switched-model simulation is used to design a ZCS LLC converter and take advantage of the mentioned benefits of IGBTs as well as of the steeper voltage transfer characteristic. Within this operation region below the resonance frequency, however, a new phenomenon of several current pulses occurring during a single switching period through the rectifier components may appear. Generally, in applications with high output currents a synchronous rectifier (SR) is often used to keep the conduction losses of the rectifier stage at a moderate level: Low-voltage MOSFETs, which actively need to be gated synchronously to the polarity of the current pulses, are employed then instead of more lossy rectifier diodes. However, standard SR driver ICs have been shown to be unable to properly rectify the multi-pulse output currents of the proposed LLC operation, resulting in high conduction losses of the rectifier stage. A cost-effective hardware concept is presented which ensures proper rectification by using standard SR-ICs that are actively overdriven by the converter’s central microcontroller. A 2 kW prototype for an EV on-board DC-DC converter was built to show the effectiveness of the method, documenting an increase in efficiency by up to 4.1 % compared to a purely SR-IC-based solution. Overall efficiency is very similar to that of a conventional (MOSFET-based) LLC converter so that the ZCS-operated LLC IGBT-converter represents a cost-effective alternative, which even shows 10 % less worst-case losses."}],"title":"Advanced Synchronous Rectification for an IGBT-Based ZCS LLC Converter with High Output Currents for a 2 kW Automotive DC-DC Stage","user_id":"60223"},{"main_file_link":[{"url":"https://ieeexplore.ieee.org/document/10171537"}],"page":"162-173","type":"conference","year":"2023","citation":{"apa":"Wu, X., Kenter, T., Schade, R., Kühne, T., & Plessl, C. (2023). Computing and Compressing Electron Repulsion Integrals on FPGAs. 2023 IEEE 31st Annual International Symposium on Field-Programmable Custom Computing Machines (FCCM), 162–173. https://doi.org/10.1109/FCCM57271.2023.00026","ama":"Wu X, Kenter T, Schade R, Kühne T, Plessl C. Computing and Compressing Electron Repulsion Integrals on FPGAs. In: 2023 IEEE 31st Annual International Symposium on Field-Programmable Custom Computing Machines (FCCM). ; 2023:162-173. doi:10.1109/FCCM57271.2023.00026","short":"X. Wu, T. Kenter, R. Schade, T. Kühne, C. Plessl, in: 2023 IEEE 31st Annual International Symposium on Field-Programmable Custom Computing Machines (FCCM), 2023, pp. 162–173.","chicago":"Wu, Xin, Tobias Kenter, Robert Schade, Thomas Kühne, and Christian Plessl. “Computing and Compressing Electron Repulsion Integrals on FPGAs.” In 2023 IEEE 31st Annual International Symposium on Field-Programmable Custom Computing Machines (FCCM), 162–73, 2023. https://doi.org/10.1109/FCCM57271.2023.00026.","ieee":"X. Wu, T. Kenter, R. Schade, T. Kühne, and C. Plessl, “Computing and Compressing Electron Repulsion Integrals on FPGAs,” in 2023 IEEE 31st Annual International Symposium on Field-Programmable Custom Computing Machines (FCCM), 2023, pp. 162–173, doi: 10.1109/FCCM57271.2023.00026.","mla":"Wu, Xin, et al. “Computing and Compressing Electron Repulsion Integrals on FPGAs.” 2023 IEEE 31st Annual International Symposium on Field-Programmable Custom Computing Machines (FCCM), 2023, pp. 162–73, doi:10.1109/FCCM57271.2023.00026.","bibtex":"@inproceedings{Wu_Kenter_Schade_Kühne_Plessl_2023, title={Computing and Compressing Electron Repulsion Integrals on FPGAs}, DOI={10.1109/FCCM57271.2023.00026}, booktitle={2023 IEEE 31st Annual International Symposium on Field-Programmable Custom Computing Machines (FCCM)}, author={Wu, Xin and Kenter, Tobias and Schade, Robert and Kühne, Thomas and Plessl, Christian}, year={2023}, pages={162–173} }"},"language":[{"iso":"eng"}],"date_updated":"2023-08-02T15:05:42Z","_id":"43228","doi":"10.1109/FCCM57271.2023.00026","department":[{"_id":"27"},{"_id":"518"}],"publication":"2023 IEEE 31st Annual International Symposium on Field-Programmable Custom Computing Machines (FCCM)","quality_controlled":"1","author":[{"last_name":"Wu","id":"77439","first_name":"Xin","full_name":"Wu, Xin"},{"first_name":"Tobias","full_name":"Kenter, Tobias","last_name":"Kenter","id":"3145"},{"last_name":"Schade","id":"75963","first_name":"Robert","orcid":"0000-0002-6268-539","full_name":"Schade, Robert"},{"last_name":"Kühne","id":"49079","first_name":"Thomas","full_name":"Kühne, Thomas"},{"last_name":"Plessl","id":"16153","first_name":"Christian","orcid":"0000-0001-5728-9982","full_name":"Plessl, Christian"}],"project":[{"name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"date_created":"2023-03-30T11:15:40Z","status":"public","abstract":[{"lang":"eng","text":"The computation of electron repulsion integrals (ERIs) over Gaussian-type orbitals (GTOs) is a challenging problem in quantum-mechanics-based atomistic simulations. In practical simulations, several trillions of ERIs may have to be\r\ncomputed for every time step.\r\nIn this work, we investigate FPGAs as accelerators for the ERI computation. We use template parameters, here within the Intel oneAPI tool flow, to create customized designs for 256 different ERI quartet classes, based on their orbitals. To maximize data reuse, all intermediates are buffered in FPGA on-chip memory with customized layout. The pre-calculation of intermediates also helps to overcome data dependencies caused by multi-dimensional recurrence\r\nrelations. The involved loop structures are partially or even fully unrolled for high throughput of FPGA kernels. Furthermore, a lossy compression algorithm utilizing arbitrary bitwidth integers is integrated in the FPGA kernels. To our\r\nbest knowledge, this is the first work on ERI computation on FPGAs that supports more than just the single most basic quartet class. Also, the integration of ERI computation and compression it a novelty that is not even covered by CPU or GPU libraries so far.\r\nOur evaluation shows that using 16-bit integer for the ERI compression, the fastest FPGA kernels exceed the performance of 10 GERIS ($10 \\times 10^9$ ERIs per second) on one Intel Stratix 10 GX 2800 FPGA, with maximum absolute errors around $10^{-7}$ - $10^{-5}$ Hartree. The measured throughput can be accurately explained by a performance model. The FPGA kernels deployed on 2 FPGAs outperform similar computations using the widely used libint reference on a two-socket server with 40 Xeon Gold 6148 CPU cores of the same process technology by factors up to 6.0x and on a new two-socket server with 128 EPYC 7713 CPU cores by up to 1.9x."}],"external_id":{"arxiv":["2303.13632"]},"title":"Computing and Compressing Electron Repulsion Integrals on FPGAs","user_id":"75963"},{"department":[{"_id":"27"},{"_id":"518"}],"publication_status":"published","publication_identifier":{"issn":["1094-3420","1741-2846"]},"project":[{"name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"title":"Breaking the exascale barrier for the electronic structure problem in ab-initio molecular dynamics","language":[{"iso":"eng"}],"date_updated":"2023-08-02T15:04:53Z","doi":"10.1177/10943420231177631","oa":"1","quality_controlled":"1","publisher":"SAGE Publications","author":[{"id":"75963","last_name":"Schade","full_name":"Schade, Robert","orcid":"0000-0002-6268-539","first_name":"Robert"},{"full_name":"Kenter, Tobias","first_name":"Tobias","id":"3145","last_name":"Kenter"},{"first_name":"Hossam","orcid":"0000-0002-4945-1481","full_name":"Elgabarty, Hossam","last_name":"Elgabarty","id":"60250"},{"first_name":"Michael","full_name":"Lass, Michael","orcid":"0000-0002-5708-7632","last_name":"Lass","id":"24135"},{"first_name":"Thomas","full_name":"Kühne, Thomas","last_name":"Kühne","id":"49079"},{"first_name":"Christian","orcid":"0000-0001-5728-9982","full_name":"Plessl, Christian","last_name":"Plessl","id":"16153"}],"keyword":["Hardware and Architecture","Theoretical Computer Science","Software"],"publication":"The International Journal of High Performance Computing Applications","status":"public","date_created":"2023-05-30T09:19:09Z","article_type":"original","abstract":[{"lang":"eng","text":" The non-orthogonal local submatrix method applied to electronic structure–based molecular dynamics simulations is shown to exceed 1.1 EFLOP/s in FP16/FP32-mixed floating-point arithmetic when using 4400 NVIDIA A100 GPUs of the Perlmutter system. This is enabled by a modification of the original method that pushes the sustained fraction of the peak performance to about 80%. Example calculations are performed for SARS-CoV-2 spike proteins with up to 83 million atoms. "}],"user_id":"75963","main_file_link":[{"open_access":"1","url":"https://journals.sagepub.com/doi/10.1177/10943420231177631"}],"year":"2023","type":"journal_article","citation":{"ieee":"R. Schade, T. Kenter, H. Elgabarty, M. Lass, T. Kühne, and C. Plessl, “Breaking the exascale barrier for the electronic structure problem in ab-initio molecular dynamics,” The International Journal of High Performance Computing Applications, Art. no. 109434202311776, 2023, doi: 10.1177/10943420231177631.","bibtex":"@article{Schade_Kenter_Elgabarty_Lass_Kühne_Plessl_2023, title={Breaking the exascale barrier for the electronic structure problem in ab-initio molecular dynamics}, DOI={10.1177/10943420231177631}, number={109434202311776}, journal={The International Journal of High Performance Computing Applications}, publisher={SAGE Publications}, author={Schade, Robert and Kenter, Tobias and Elgabarty, Hossam and Lass, Michael and Kühne, Thomas and Plessl, Christian}, year={2023} }","mla":"Schade, Robert, et al. “Breaking the Exascale Barrier for the Electronic Structure Problem in Ab-Initio Molecular Dynamics.” The International Journal of High Performance Computing Applications, 109434202311776, SAGE Publications, 2023, doi:10.1177/10943420231177631.","ama":"Schade R, Kenter T, Elgabarty H, Lass M, Kühne T, Plessl C. Breaking the exascale barrier for the electronic structure problem in ab-initio molecular dynamics. The International Journal of High Performance Computing Applications. Published online 2023. doi:10.1177/10943420231177631","short":"R. Schade, T. Kenter, H. Elgabarty, M. Lass, T. Kühne, C. Plessl, The International Journal of High Performance Computing Applications (2023).","apa":"Schade, R., Kenter, T., Elgabarty, H., Lass, M., Kühne, T., & Plessl, C. (2023). Breaking the exascale barrier for the electronic structure problem in ab-initio molecular dynamics. The International Journal of High Performance Computing Applications, Article 109434202311776. https://doi.org/10.1177/10943420231177631","chicago":"Schade, Robert, Tobias Kenter, Hossam Elgabarty, Michael Lass, Thomas Kühne, and Christian Plessl. “Breaking the Exascale Barrier for the Electronic Structure Problem in Ab-Initio Molecular Dynamics.” The International Journal of High Performance Computing Applications, 2023. https://doi.org/10.1177/10943420231177631."},"_id":"45361","article_number":"109434202311776"},{"citation":{"ama":"Feddersen S, Zolatanosha V, Alshaikh A, Reuter D, Heyn C. Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets. Nanomaterials. 2023;13(3). doi:10.3390/nano13030466","apa":"Feddersen, S., Zolatanosha, V., Alshaikh, A., Reuter, D., & Heyn, C. (2023). Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets. Nanomaterials, 13(3), Article 466. https://doi.org/10.3390/nano13030466","chicago":"Feddersen, Stefan, Viktoryia Zolatanosha, Ahmed Alshaikh, Dirk Reuter, and Christian Heyn. “Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets.” Nanomaterials 13, no. 3 (2023). https://doi.org/10.3390/nano13030466.","mla":"Feddersen, Stefan, et al. “Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets.” Nanomaterials, vol. 13, no. 3, 466, MDPI AG, 2023, doi:10.3390/nano13030466.","bibtex":"@article{Feddersen_Zolatanosha_Alshaikh_Reuter_Heyn_2023, title={Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets}, volume={13}, DOI={10.3390/nano13030466}, number={3466}, journal={Nanomaterials}, publisher={MDPI AG}, author={Feddersen, Stefan and Zolatanosha, Viktoryia and Alshaikh, Ahmed and Reuter, Dirk and Heyn, Christian}, year={2023} }","short":"S. Feddersen, V. Zolatanosha, A. Alshaikh, D. Reuter, C. Heyn, Nanomaterials 13 (2023).","ieee":"S. Feddersen, V. Zolatanosha, A. Alshaikh, D. Reuter, and C. Heyn, “Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets,” Nanomaterials, vol. 13, no. 3, Art. no. 466, 2023, doi: 10.3390/nano13030466."},"year":"2023","type":"journal_article","intvolume":" 13","_id":"46278","article_number":"466","issue":"3","publication":"Nanomaterials","keyword":["General Materials Science","General Chemical Engineering"],"publisher":"MDPI AG","author":[{"last_name":"Feddersen","full_name":"Feddersen, Stefan","first_name":"Stefan"},{"full_name":"Zolatanosha, Viktoryia","first_name":"Viktoryia","last_name":"Zolatanosha"},{"first_name":"Ahmed","full_name":"Alshaikh, Ahmed","last_name":"Alshaikh"},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Heyn","full_name":"Heyn, Christian","first_name":"Christian"}],"volume":13,"date_created":"2023-08-03T11:13:28Z","status":"public","abstract":[{"text":"Site-controlled Ga droplets on AlGaAs substrates are fabricated using area-selective deposition of Ga through apertures in a mask during molecular beam epitaxy (MBE). The Ga droplets can be crystallized into GaAs quantum dots using a crystallization step under As flux. In order to model the complex process, including the masked deposition of the droplets and a reduction of their number during a thermal annealing step, a multiscale kinetic Monte Carlo (mkMC) simulation of self-assembled Ga droplet formation on AlGaAs is expanded for area-selective deposition. The simulation has only two free model parameters: the activation energy for surface diffusion and the activation energy for thermal escape of adatoms from a droplet. Simulated droplet numbers within the opening of the aperture agree quantitatively with the experimental results down to the perfect site-control, with one droplet per aperture. However, the model parameters are different compared to those of the self-assembled droplet growth. We attribute this to the presence of the mask in close proximity to the surface, which modifies the local process temperature and the As background. This approach also explains the dependence of the model parameters on the size of the aperture.","lang":"eng"}],"user_id":"42514","language":[{"iso":"eng"}],"date_updated":"2023-08-03T11:14:10Z","doi":"10.3390/nano13030466","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["2079-4991"]},"publication_status":"published","title":"Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets"},{"user_id":"53339","title":"Dispersion Energy‐Stabilized Boron and Phosphorus Lewis Pairs","status":"public","date_created":"2023-08-03T09:00:33Z","publication_status":"published","publication_identifier":{"issn":["1433-7851","1521-3773"]},"publisher":"Wiley","author":[{"last_name":"Sieland","full_name":"Sieland, Benedikt","first_name":"Benedikt"},{"last_name":"Stahn","first_name":"Marcel","full_name":"Stahn, Marcel"},{"full_name":"Schoch, Roland","first_name":"Roland","last_name":"Schoch"},{"last_name":"Daniliuc","first_name":"Constantin","full_name":"Daniliuc, Constantin"},{"full_name":"Spicher, Sebastian","first_name":"Sebastian","last_name":"Spicher"},{"last_name":"Grimme","first_name":"Stefan","full_name":"Grimme, Stefan"},{"first_name":"Andreas","full_name":"Hansen, Andreas","last_name":"Hansen"},{"first_name":"Jan","full_name":"Paradies, Jan","orcid":"0000-0002-3698-668X","last_name":"Paradies","id":"53339"}],"publication":"Angewandte Chemie International Edition","department":[{"_id":"2"},{"_id":"389"}],"keyword":["General Chemistry","Catalysis"],"doi":"10.1002/anie.202308752","date_updated":"2023-08-03T09:01:41Z","_id":"46277","language":[{"iso":"eng"}],"citation":{"bibtex":"@article{Sieland_Stahn_Schoch_Daniliuc_Spicher_Grimme_Hansen_Paradies_2023, title={Dispersion Energy‐Stabilized Boron and Phosphorus Lewis Pairs}, DOI={10.1002/anie.202308752}, journal={Angewandte Chemie International Edition}, publisher={Wiley}, author={Sieland, Benedikt and Stahn, Marcel and Schoch, Roland and Daniliuc, Constantin and Spicher, Sebastian and Grimme, Stefan and Hansen, Andreas and Paradies, Jan}, year={2023} }","mla":"Sieland, Benedikt, et al. “Dispersion Energy‐Stabilized Boron and Phosphorus Lewis Pairs.” Angewandte Chemie International Edition, Wiley, 2023, doi:10.1002/anie.202308752.","chicago":"Sieland, Benedikt, Marcel Stahn, Roland Schoch, Constantin Daniliuc, Sebastian Spicher, Stefan Grimme, Andreas Hansen, and Jan Paradies. “Dispersion Energy‐Stabilized Boron and Phosphorus Lewis Pairs.” Angewandte Chemie International Edition, 2023. https://doi.org/10.1002/anie.202308752.","ama":"Sieland B, Stahn M, Schoch R, et al. Dispersion Energy‐Stabilized Boron and Phosphorus Lewis Pairs. Angewandte Chemie International Edition. Published online 2023. doi:10.1002/anie.202308752","apa":"Sieland, B., Stahn, M., Schoch, R., Daniliuc, C., Spicher, S., Grimme, S., Hansen, A., & Paradies, J. (2023). Dispersion Energy‐Stabilized Boron and Phosphorus Lewis Pairs. Angewandte Chemie International Edition. https://doi.org/10.1002/anie.202308752","ieee":"B. Sieland et al., “Dispersion Energy‐Stabilized Boron and Phosphorus Lewis Pairs,” Angewandte Chemie International Edition, 2023, doi: 10.1002/anie.202308752.","short":"B. Sieland, M. Stahn, R. Schoch, C. Daniliuc, S. Spicher, S. Grimme, A. Hansen, J. Paradies, Angewandte Chemie International Edition (2023)."},"type":"journal_article","year":"2023"},{"language":[{"iso":"eng"}],"type":"conference","citation":{"chicago":"Clausing, Lennart, Zakarya Guetattfi, Paul Kaufmann, Christian Lienen, and Marco Platzner. “On Guaranteeing Schedulability of Periodic Real-Time Hardware Tasks under ReconOS64.” In Proceedings of the 19th International Symposium on Applied Reconfigurable Computing (ARC), 2023.","ama":"Clausing L, Guetattfi Z, Kaufmann P, Lienen C, Platzner M. On Guaranteeing Schedulability of Periodic Real-time Hardware Tasks under ReconOS64. In: Proceedings of the 19th International Symposium on Applied Reconfigurable Computing (ARC). ; 2023.","apa":"Clausing, L., Guetattfi, Z., Kaufmann, P., Lienen, C., & Platzner, M. (2023). On Guaranteeing Schedulability of Periodic Real-time Hardware Tasks under ReconOS64. Proceedings of the 19th International Symposium on Applied Reconfigurable Computing (ARC).","bibtex":"@inproceedings{Clausing_Guetattfi_Kaufmann_Lienen_Platzner_2023, title={On Guaranteeing Schedulability of Periodic Real-time Hardware Tasks under ReconOS64}, booktitle={Proceedings of the 19th International Symposium on Applied Reconfigurable Computing (ARC)}, author={Clausing, Lennart and Guetattfi, Zakarya and Kaufmann, Paul and Lienen, Christian and Platzner, Marco}, year={2023} }","mla":"Clausing, Lennart, et al. “On Guaranteeing Schedulability of Periodic Real-Time Hardware Tasks under ReconOS64.” Proceedings of the 19th International Symposium on Applied Reconfigurable Computing (ARC), 2023.","short":"L. Clausing, Z. Guetattfi, P. Kaufmann, C. Lienen, M. Platzner, in: Proceedings of the 19th International Symposium on Applied Reconfigurable Computing (ARC), 2023.","ieee":"L. Clausing, Z. Guetattfi, P. Kaufmann, C. Lienen, and M. Platzner, “On Guaranteeing Schedulability of Periodic Real-time Hardware Tasks under ReconOS64,” 2023."},"year":"2023","date_updated":"2023-08-03T13:49:50Z","_id":"45913","author":[{"id":"74287","last_name":"Clausing","orcid":"0000-0003-3789-6034","full_name":"Clausing, Lennart","first_name":"Lennart"},{"last_name":"Guetattfi","first_name":"Zakarya","full_name":"Guetattfi, Zakarya"},{"first_name":"Paul","full_name":"Kaufmann, Paul","last_name":"Kaufmann"},{"first_name":"Christian","full_name":"Lienen, Christian","last_name":"Lienen","id":"60323"},{"id":"398","last_name":"Platzner","full_name":"Platzner, Marco","first_name":"Marco"}],"department":[{"_id":"78"}],"publication":"Proceedings of the 19th International Symposium on Applied Reconfigurable Computing (ARC)","status":"public","date_created":"2023-07-09T12:50:32Z","project":[{"name":"SFB 901 - T1: SFB 901 -Subproject T1","_id":"83"},{"name":"SFB 901 - T: SFB 901 - Project Area T","_id":"82"},{"_id":"1","name":"SFB 901: SFB 901: On-The-Fly Computing - Individualisierte IT-Dienstleistungen in dynamischen Märkten ","grant_number":"160364472"}],"user_id":"477","title":"On Guaranteeing Schedulability of Periodic Real-time Hardware Tasks under ReconOS64"},{"page":"42–47","year":"2023","type":"book_chapter","citation":{"ieee":"D. Tophinke, “‘Tankrabatt’ und ‘Freiheitsenergie’. Wie der Blog ‘neusprech.org’ politische Euphemismen entlarvt,” in Zwischen Fake und Fakt, vol. 300, H. Feilke, Ed. Hannover: Friedrich Verlag, 2023, pp. 42–47.","short":"D. Tophinke, in: H. Feilke (Ed.), Zwischen Fake und Fakt, Friedrich Verlag, Hannover, 2023, pp. 42–47.","bibtex":"@inbook{Tophinke_2023, place={Hannover}, series={Praxis Deutsch}, title={“Tankrabatt” und “Freiheitsenergie”. Wie der Blog “neusprech.org” politische Euphemismen entlarvt}, volume={300}, booktitle={Zwischen Fake und Fakt}, publisher={Friedrich Verlag}, author={Tophinke, Doris}, editor={Feilke, Helmuth}, year={2023}, pages={42–47}, collection={Praxis Deutsch} }","mla":"Tophinke, Doris. “‘Tankrabatt’ und ‘Freiheitsenergie’. Wie der Blog ‘neusprech.org’ politische Euphemismen entlarvt.” Zwischen Fake und Fakt, edited by Helmuth Feilke, vol. 300, Friedrich Verlag, 2023, pp. 42–47.","chicago":"Tophinke, Doris. “‘Tankrabatt’ und ‘Freiheitsenergie’. Wie der Blog ‘neusprech.org’ politische Euphemismen entlarvt.” In Zwischen Fake und Fakt, edited by Helmuth Feilke, 300:42–47. Praxis Deutsch. Hannover: Friedrich Verlag, 2023.","ama":"Tophinke D. “Tankrabatt” und “Freiheitsenergie”. Wie der Blog “neusprech.org” politische Euphemismen entlarvt. In: Feilke H, ed. Zwischen Fake und Fakt. Vol 300. Praxis Deutsch. Friedrich Verlag; 2023:42–47.","apa":"Tophinke, D. (2023). “Tankrabatt” und “Freiheitsenergie”. Wie der Blog “neusprech.org” politische Euphemismen entlarvt. In H. Feilke (Ed.), Zwischen Fake und Fakt (Vol. 300, pp. 42–47). Friedrich Verlag."},"intvolume":" 300","_id":"46099","publication":"Zwischen Fake und Fakt","publisher":"Friedrich Verlag","author":[{"first_name":"Doris","full_name":"Tophinke, Doris","last_name":"Tophinke","id":"16277"}],"date_created":"2023-07-19T13:29:28Z","status":"public","volume":300,"user_id":"16277","series_title":"Praxis Deutsch","language":[{"iso":"ger"}],"date_updated":"2023-08-03T15:35:11Z","department":[{"_id":"5"},{"_id":"115"}],"publication_status":"published","editor":[{"first_name":"Helmuth","full_name":"Feilke, Helmuth","last_name":"Feilke"}],"place":"Hannover","title":"\"Tankrabatt\" und \"Freiheitsenergie\". 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