Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs
M. Panfilova, A. Pawlis, C. Arens, S.M. de Vasconcellos, G. Berth, K.P. Hüsch, V. Wiedemeier, A. Zrenner, K. Lischka, Microelectronics Journal 40 (2008) 221–223.
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Journal Article
| Published
| English
Author
Panfilova, M.;
Pawlis, A.;
Arens, C.;
de Vasconcellos, S. Michaelis;
Berth, GerhardLibreCat;
Hüsch, K.P.;
Wiedemeier, V.;
Zrenner, ArturLibreCat 
;
Lischka, K.
;
Lischka, K.Department
Abstract
Semiconductor microdiscs are promising for applications in photonics and quantum-information processing, such as efficient solid-state-based single-photon emitters. Strain in the multilayer structure of those devices has an important influence on their optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence measurements of microdiscs reveal substantially broadened emission lines with a shift to lower energy at the undercut part of microdiscs, indicating local relaxation in this area. The distribution of the strain in the microdiscs is obtained from an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs is free of defects.
Keywords
Publishing Year
Journal Title
Microelectronics Journal
Volume
40
Issue
2
Page
221-223
ISSN
LibreCat-ID
Cite this
Panfilova M, Pawlis A, Arens C, et al. Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. Microelectronics Journal. 2008;40(2):221-223. doi:10.1016/j.mejo.2008.07.056
Panfilova, M., Pawlis, A., Arens, C., de Vasconcellos, S. M., Berth, G., Hüsch, K. P., … Lischka, K. (2008). Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. Microelectronics Journal, 40(2), 221–223. https://doi.org/10.1016/j.mejo.2008.07.056
@article{Panfilova_Pawlis_Arens_de Vasconcellos_Berth_Hüsch_Wiedemeier_Zrenner_Lischka_2008, title={Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs}, volume={40}, DOI={10.1016/j.mejo.2008.07.056}, number={2}, journal={Microelectronics Journal}, publisher={Elsevier BV}, author={Panfilova, M. and Pawlis, A. and Arens, C. and de Vasconcellos, S. Michaelis and Berth, Gerhard and Hüsch, K.P. and Wiedemeier, V. and Zrenner, Artur and Lischka, K.}, year={2008}, pages={221–223} }
Panfilova, M., A. Pawlis, C. Arens, S. Michaelis de Vasconcellos, Gerhard Berth, K.P. Hüsch, V. Wiedemeier, Artur Zrenner, and K. Lischka. “Micro-Raman Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.” Microelectronics Journal 40, no. 2 (2008): 221–23. https://doi.org/10.1016/j.mejo.2008.07.056.
M. Panfilova et al., “Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs,” Microelectronics Journal, vol. 40, no. 2, pp. 221–223, 2008.
Panfilova, M., et al. “Micro-Raman Imaging and Micro-Photoluminescence Measurements of Strain in ZnMgSe/ZnSe Microdiscs.” Microelectronics Journal, vol. 40, no. 2, Elsevier BV, 2008, pp. 221–23, doi:10.1016/j.mejo.2008.07.056.
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