Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy

W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters 92 (2008).

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Journal Article | Published | English
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Journal Title
Applied Physics Letters
Volume
92
Issue
19
Article Number
193111
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Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters. 2008;92(19). doi:10.1063/1.2920439
Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., & Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters, 92(19). https://doi.org/10.1063/1.2920439
@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}, volume={92}, DOI={10.1063/1.2920439}, number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }
Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff, and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19 (2008). https://doi.org/10.1063/1.2920439.
W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics Letters, vol. 92, no. 19, 2008.
Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92, no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439.

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