Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells

S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied Physics (2002) 6605–6607.

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Journal Article | Published | English
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Journal of Applied Physics
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6605-6607
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Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. Journal of Applied Physics. 2002:6605-6607. doi:10.1063/1.371720
Eshlaghi, S., Meier, C., Suter, D., Reuter, D., & Wieck, A. D. (2002). Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. Journal of Applied Physics, 6605–6607. https://doi.org/10.1063/1.371720
@article{Eshlaghi_Meier_Suter_Reuter_Wieck_2002, title={Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells}, DOI={10.1063/1.371720}, journal={Journal of Applied Physics}, author={Eshlaghi, Soheyla and Meier, Cedrik and Suter, Dieter and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={6605–6607} }
Eshlaghi, Soheyla, Cedrik Meier, Dieter Suter, Dirk Reuter, and A. D. Wieck. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” Journal of Applied Physics, 2002, 6605–7. https://doi.org/10.1063/1.371720.
S. Eshlaghi, C. Meier, D. Suter, D. Reuter, and A. D. Wieck, “Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells,” Journal of Applied Physics, pp. 6605–6607, 2002.
Eshlaghi, Soheyla, et al. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” Journal of Applied Physics, 2002, pp. 6605–07, doi:10.1063/1.371720.

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