---
_id: '10770'
author:
- first_name: Hassan
  full_name: Ghasemzadeh Mohammadi, Hassan
  id: '61186'
  last_name: Ghasemzadeh Mohammadi
- first_name: Pierre-Emmanuel
  full_name: Gaillardon, Pierre-Emmanuel
  last_name: Gaillardon
- first_name: Giovanni
  full_name: De Micheli, Giovanni
  last_name: De Micheli
citation:
  ama: Ghasemzadeh Mohammadi H, Gaillardon P-E, De Micheli G. From Defect Analysis
    to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires. <i>IEEE
    Transactions on Nanotechnology</i>. 2015;14(6):1117-1126. doi:<a href="https://doi.org/10.1109/TNANO.2015.2482359">10.1109/TNANO.2015.2482359</a>
  apa: Ghasemzadeh Mohammadi, H., Gaillardon, P.-E., &#38; De Micheli, G. (2015).
    From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon
    Nanowires. <i>IEEE Transactions on Nanotechnology</i>, <i>14</i>(6), 1117–1126.
    <a href="https://doi.org/10.1109/TNANO.2015.2482359">https://doi.org/10.1109/TNANO.2015.2482359</a>
  bibtex: '@article{Ghasemzadeh Mohammadi_Gaillardon_De Micheli_2015, title={From
    Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon
    Nanowires}, volume={14}, DOI={<a href="https://doi.org/10.1109/TNANO.2015.2482359">10.1109/TNANO.2015.2482359</a>},
    number={6}, journal={IEEE Transactions on Nanotechnology}, publisher={IEEE}, author={Ghasemzadeh
    Mohammadi, Hassan and Gaillardon, Pierre-Emmanuel and De Micheli, Giovanni}, year={2015},
    pages={1117–1126} }'
  chicago: 'Ghasemzadeh Mohammadi, Hassan, Pierre-Emmanuel Gaillardon, and Giovanni
    De Micheli. “From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity
    Silicon Nanowires.” <i>IEEE Transactions on Nanotechnology</i> 14, no. 6 (2015):
    1117–26. <a href="https://doi.org/10.1109/TNANO.2015.2482359">https://doi.org/10.1109/TNANO.2015.2482359</a>.'
  ieee: H. Ghasemzadeh Mohammadi, P.-E. Gaillardon, and G. De Micheli, “From Defect
    Analysis to Gate-Level Fault Modeling of Controllable-Polarity Silicon Nanowires,”
    <i>IEEE Transactions on Nanotechnology</i>, vol. 14, no. 6, pp. 1117–1126, 2015.
  mla: Ghasemzadeh Mohammadi, Hassan, et al. “From Defect Analysis to Gate-Level Fault
    Modeling of Controllable-Polarity Silicon Nanowires.” <i>IEEE Transactions on
    Nanotechnology</i>, vol. 14, no. 6, IEEE, 2015, pp. 1117–26, doi:<a href="https://doi.org/10.1109/TNANO.2015.2482359">10.1109/TNANO.2015.2482359</a>.
  short: H. Ghasemzadeh Mohammadi, P.-E. Gaillardon, G. De Micheli, IEEE Transactions
    on Nanotechnology 14 (2015) 1117–1126.
date_created: 2019-07-10T12:08:15Z
date_updated: 2022-01-06T06:50:50Z
department:
- _id: '78'
doi: 10.1109/TNANO.2015.2482359
extern: '1'
intvolume: '        14'
issue: '6'
language:
- iso: eng
page: 1117-1126
publication: IEEE Transactions on Nanotechnology
publisher: IEEE
status: public
title: From Defect Analysis to Gate-Level Fault Modeling of Controllable-Polarity
  Silicon Nanowires
type: journal_article
user_id: '3118'
volume: 14
year: '2015'
...