{"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"}],"citation":{"mla":"Zirkelbach, F., et al. “Combined Ab Initio and Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i>, vol. 84, no. 6, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>.","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. K. N. Lindner, W. G. Schmidt, and E. Rauls, “Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon,” <i>Physical Review B</i>, vol. 84, no. 6, 2011.","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J. K. N., Schmidt, W. G., &#38; Rauls, E. (2011). Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>, <i>84</i>(6). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J.K.N. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>}, number={6}, journal={Physical Review B}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, J. K. N. and Schmidt, Wolf Gero and Rauls, E.}, year={2011} }","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner JKN, Schmidt WG, Rauls E. Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>. 2011;84(6). doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, J. K. N. Lindner, Wolf Gero Schmidt, and E. Rauls. “Combined Ab Initio and Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i> 84, no. 6 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>."},"funded_apc":"1","user_id":"16199","doi":"10.1103/physrevb.84.064126","volume":84,"publication_status":"published","date_updated":"2022-01-06T06:51:45Z","author":[{"full_name":"Zirkelbach, F.","last_name":"Zirkelbach","first_name":"F."},{"last_name":"Stritzker","full_name":"Stritzker, B.","first_name":"B."},{"last_name":"Nordlund","full_name":"Nordlund, K.","first_name":"K."},{"full_name":"Lindner, J. K. N.","last_name":"Lindner","first_name":"J. K. N."},{"id":"468","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"},{"first_name":"E.","full_name":"Rauls, E.","last_name":"Rauls"}],"status":"public","language":[{"iso":"eng"}],"publication_identifier":{"issn":["1098-0121","1550-235X"]},"intvolume":"        84","_id":"13824","year":"2011","type":"journal_article","issue":"6","publication":"Physical Review B","date_created":"2019-10-15T07:16:32Z","title":"Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon"}