{"doi":"10.1103/physrevb.82.094110","date_updated":"2022-01-06T06:51:45Z","status":"public","date_created":"2019-10-15T07:28:11Z","intvolume":" 82","citation":{"mla":"Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” Physical Review B, vol. 82, no. 9, 2010, doi:10.1103/physrevb.82.094110.","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={10.1103/physrevb.82.094110}, number={9}, journal={Physical Review B}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, J. K. N. and Schmidt, Wolf Gero and Rauls, E.}, year={2010} }","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner JKN, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B. 2010;82(9). doi:10.1103/physrevb.82.094110","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J.K.N. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J. K. N., Schmidt, W. G., & Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B, 82(9). https://doi.org/10.1103/physrevb.82.094110","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, J. K. N. Lindner, Wolf Gero Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” Physical Review B 82, no. 9 (2010). https://doi.org/10.1103/physrevb.82.094110.","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. K. N. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” Physical Review B, vol. 82, no. 9, 2010."},"_id":"13828","publication":"Physical Review B","publication_status":"published","author":[{"first_name":"F.","full_name":"Zirkelbach, F.","last_name":"Zirkelbach"},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."},{"last_name":"Nordlund","full_name":"Nordlund, K.","first_name":"K."},{"last_name":"Lindner","full_name":"Lindner, J. K. N.","first_name":"J. K. N."},{"first_name":"Wolf Gero","id":"468","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt"},{"first_name":"E.","last_name":"Rauls","full_name":"Rauls, E."}],"language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"}],"type":"journal_article","user_id":"16199","year":"2010","publication_identifier":{"issn":["1098-0121","1550-235X"]},"title":"Defects in carbon implanted silicon calculated by classical potentials and first-principles methods","funded_apc":"1","volume":82,"issue":"9"}