{"status":"public","year":"2010","citation":{"short":"S. Sanna, W.G. Schmidt, Applied Surface Science 256 (2010) 5740–5743.","chicago":"Sanna, Simone, and Wolf Gero Schmidt. “GaN/LiNbO3 (0001) Interface Formation Calculated from First-Principles.” <i>Applied Surface Science</i> 256 (2010): 5740–43. <a href=\"https://doi.org/10.1016/j.apsusc.2010.03.098\">https://doi.org/10.1016/j.apsusc.2010.03.098</a>.","ama":"Sanna S, Schmidt WG. GaN/LiNbO3 (0001) interface formation calculated from first-principles. <i>Applied Surface Science</i>. 2010;256:5740-5743. doi:<a href=\"https://doi.org/10.1016/j.apsusc.2010.03.098\">10.1016/j.apsusc.2010.03.098</a>","mla":"Sanna, Simone, and Wolf Gero Schmidt. “GaN/LiNbO3 (0001) Interface Formation Calculated from First-Principles.” <i>Applied Surface Science</i>, vol. 256, 2010, pp. 5740–43, doi:<a href=\"https://doi.org/10.1016/j.apsusc.2010.03.098\">10.1016/j.apsusc.2010.03.098</a>.","apa":"Sanna, S., &#38; Schmidt, W. G. (2010). GaN/LiNbO3 (0001) interface formation calculated from first-principles. <i>Applied Surface Science</i>, <i>256</i>, 5740–5743. <a href=\"https://doi.org/10.1016/j.apsusc.2010.03.098\">https://doi.org/10.1016/j.apsusc.2010.03.098</a>","ieee":"S. Sanna and W. G. Schmidt, “GaN/LiNbO3 (0001) interface formation calculated from first-principles,” <i>Applied Surface Science</i>, vol. 256, pp. 5740–5743, 2010.","bibtex":"@article{Sanna_Schmidt_2010, title={GaN/LiNbO3 (0001) interface formation calculated from first-principles}, volume={256}, DOI={<a href=\"https://doi.org/10.1016/j.apsusc.2010.03.098\">10.1016/j.apsusc.2010.03.098</a>}, journal={Applied Surface Science}, author={Sanna, Simone and Schmidt, Wolf Gero}, year={2010}, pages={5740–5743} }"},"volume":256,"doi":"10.1016/j.apsusc.2010.03.098","publication":"Applied Surface Science","author":[{"first_name":"Simone","full_name":"Sanna, Simone","last_name":"Sanna"},{"full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","first_name":"Wolf Gero","id":"468","orcid":"0000-0002-2717-5076"}],"page":"5740-5743","title":"GaN/LiNbO3 (0001) interface formation calculated from first-principles","publication_status":"published","publication_identifier":{"issn":["0169-4332"]},"date_updated":"2022-01-06T06:51:45Z","intvolume":"       256","language":[{"iso":"eng"}],"date_created":"2019-10-15T07:40:10Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"}],"funded_apc":"1","type":"journal_article","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"user_id":"16199","_id":"13834"}