{"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"}],"user_id":"16199","citation":{"mla":"Scholle, Andreas, et al. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” Materials Science Forum, vol. 645–648, 2010, pp. 403–06, doi:10.4028/www.scientific.net/msf.645-648.403.","apa":"Scholle, A., Greulich-Weber, S., Rauls, E., Schmidt, W. G., & Gerstmann, U. (2010). Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. Materials Science Forum, 645648, 403–406. https://doi.org/10.4028/www.scientific.net/msf.645-648.403","ieee":"A. Scholle, S. Greulich-Weber, E. Rauls, W. G. Schmidt, and U. Gerstmann, “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC,” Materials Science Forum, vol. 645–648, pp. 403–406, 2010.","short":"A. Scholle, S. Greulich-Weber, E. Rauls, W.G. Schmidt, U. Gerstmann, Materials Science Forum 645–648 (2010) 403–406.","chicago":"Scholle, Andreas, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, and Uwe Gerstmann. “Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC.” Materials Science Forum 645–648 (2010): 403–6. https://doi.org/10.4028/www.scientific.net/msf.645-648.403.","ama":"Scholle A, Greulich-Weber S, Rauls E, Schmidt WG, Gerstmann U. Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC. Materials Science Forum. 2010;645-648:403-406. doi:10.4028/www.scientific.net/msf.645-648.403","bibtex":"@article{Scholle_Greulich-Weber_Rauls_Schmidt_Gerstmann_2010, title={Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC}, volume={645–648}, DOI={10.4028/www.scientific.net/msf.645-648.403}, journal={Materials Science Forum}, author={Scholle, Andreas and Greulich-Weber, Siegmund and Rauls, Eva and Schmidt, Wolf Gero and Gerstmann, Uwe}, year={2010}, pages={403–406} }"},"volume":"645-648","doi":"10.4028/www.scientific.net/msf.645-648.403","abstract":[{"lang":"eng","text":"In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new EPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652•10-4 cm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit contribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal axis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin-orbit coup¬ling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior. "}],"status":"public","author":[{"full_name":"Scholle, Andreas","last_name":"Scholle","first_name":"Andreas"},{"full_name":"Greulich-Weber, Siegmund","last_name":"Greulich-Weber","first_name":"Siegmund"},{"first_name":"Eva","full_name":"Rauls, Eva","last_name":"Rauls"},{"id":"468","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt"},{"full_name":"Gerstmann, Uwe","last_name":"Gerstmann","first_name":"Uwe","id":"171"}],"date_updated":"2022-01-06T06:51:45Z","publication_status":"published","year":"2010","_id":"13837","language":[{"iso":"eng"}],"publication_identifier":{"issn":["1662-9752"]},"type":"journal_article","page":"403-406","title":"Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC","date_created":"2019-10-15T07:44:38Z","publication":"Materials Science Forum"}