{"publication_identifier":{"issn":["0169-4332"]},"language":[{"iso":"eng"}],"doi":"10.1016/s0169-4332(01)00114-3","_id":"13847","citation":{"short":"K. Hingerl, R.. Balderas-Navarro, A. Bonanni, P. Tichopadek, W.G. Schmidt, Applied Surface Science 175–176 (2001) 769–776.","ama":"Hingerl K, Balderas-Navarro R., Bonanni A, Tichopadek P, Schmidt WG. On the origin of resonance features in reflectance difference data of silicon. <i>Applied Surface Science</i>. 2001;175-176:769-776. doi:<a href=\"https://doi.org/10.1016/s0169-4332(01)00114-3\">10.1016/s0169-4332(01)00114-3</a>","chicago":"Hingerl, K, R.E Balderas-Navarro, A Bonanni, P Tichopadek, and Wolf Gero Schmidt. “On the Origin of Resonance Features in Reflectance Difference Data of Silicon.” <i>Applied Surface Science</i> 175–176 (2001): 769–76. <a href=\"https://doi.org/10.1016/s0169-4332(01)00114-3\">https://doi.org/10.1016/s0169-4332(01)00114-3</a>.","ieee":"K. Hingerl, R. . Balderas-Navarro, A. Bonanni, P. Tichopadek, and W. G. Schmidt, “On the origin of resonance features in reflectance difference data of silicon,” <i>Applied Surface Science</i>, vol. 175–176, pp. 769–776, 2001.","bibtex":"@article{Hingerl_Balderas-Navarro_Bonanni_Tichopadek_Schmidt_2001, title={On the origin of resonance features in reflectance difference data of silicon}, volume={175–176}, DOI={<a href=\"https://doi.org/10.1016/s0169-4332(01)00114-3\">10.1016/s0169-4332(01)00114-3</a>}, journal={Applied Surface Science}, author={Hingerl, K and Balderas-Navarro, R.E and Bonanni, A and Tichopadek, P and Schmidt, Wolf Gero}, year={2001}, pages={769–776} }","apa":"Hingerl, K., Balderas-Navarro, R. ., Bonanni, A., Tichopadek, P., &#38; Schmidt, W. G. (2001). On the origin of resonance features in reflectance difference data of silicon. <i>Applied Surface Science</i>, <i>175</i>–<i>176</i>, 769–776. <a href=\"https://doi.org/10.1016/s0169-4332(01)00114-3\">https://doi.org/10.1016/s0169-4332(01)00114-3</a>","mla":"Hingerl, K., et al. “On the Origin of Resonance Features in Reflectance Difference Data of Silicon.” <i>Applied Surface Science</i>, vol. 175–176, 2001, pp. 769–76, doi:<a href=\"https://doi.org/10.1016/s0169-4332(01)00114-3\">10.1016/s0169-4332(01)00114-3</a>."},"year":"2001","author":[{"last_name":"Hingerl","full_name":"Hingerl, K","first_name":"K"},{"first_name":"R.E","last_name":"Balderas-Navarro","full_name":"Balderas-Navarro, R.E"},{"last_name":"Bonanni","full_name":"Bonanni, A","first_name":"A"},{"full_name":"Tichopadek, P","last_name":"Tichopadek","first_name":"P"},{"orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","first_name":"Wolf Gero","id":"468"}],"date_updated":"2022-01-06T06:51:45Z","publication":"Applied Surface Science","title":"On the origin of resonance features in reflectance difference data of silicon","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"}],"user_id":"16199","page":"769-776","status":"public","date_created":"2019-10-15T09:32:03Z","publication_status":"published","type":"journal_article","volume":"175-176"}