{"publication_status":"published","issue":"4","language":[{"iso":"eng"}],"page":"345-348","date_updated":"2022-01-06T06:51:45Z","type":"journal_article","publication":"Solid State Communications","doi":"10.1016/0038-1098(94)90597-5","author":[{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","id":"468","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"},{"first_name":"GP","last_name":"Srivastava","full_name":"Srivastava, GP"}],"status":"public","intvolume":" 89","year":"1994","user_id":"16199","citation":{"mla":"Schmidt, Wolf Gero, and GP Srivastava. “First Principles Calculations of Interface Phonons of an Epitaxial Sb Monolayer on GaAs(110) and InP(110).” Solid State Communications, vol. 89, no. 4, 1994, pp. 345–48, doi:10.1016/0038-1098(94)90597-5.","ama":"Schmidt WG, Srivastava G. First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications. 1994;89(4):345-348. doi:10.1016/0038-1098(94)90597-5","bibtex":"@article{Schmidt_Srivastava_1994, title={First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)}, volume={89}, DOI={10.1016/0038-1098(94)90597-5}, number={4}, journal={Solid State Communications}, author={Schmidt, Wolf Gero and Srivastava, GP}, year={1994}, pages={345–348} }","ieee":"W. G. Schmidt and G. Srivastava, “First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110),” Solid State Communications, vol. 89, no. 4, pp. 345–348, 1994.","short":"W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.","apa":"Schmidt, W. G., & Srivastava, G. (1994). First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications, 89(4), 345–348. https://doi.org/10.1016/0038-1098(94)90597-5","chicago":"Schmidt, Wolf Gero, and GP Srivastava. “First Principles Calculations of Interface Phonons of an Epitaxial Sb Monolayer on GaAs(110) and InP(110).” Solid State Communications 89, no. 4 (1994): 345–48. https://doi.org/10.1016/0038-1098(94)90597-5."},"date_created":"2019-10-15T10:05:59Z","_id":"13854","title":"First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)","publication_identifier":{"issn":["0038-1098"]},"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"}],"volume":89}