{"page":"143-147","date_updated":"2022-01-06T06:52:32Z","publication_status":"published","publication_identifier":{"issn":["0040-6090"]},"citation":{"short":"H. Mirhosseini, J. Kiss, G. Roma, C. Felser, Thin Solid Films (2016) 143–147.","bibtex":"@article{Mirhosseini_Kiss_Roma_Felser_2016, title={Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations}, DOI={<a href=\"https://doi.org/10.1016/j.tsf.2016.03.053\">10.1016/j.tsf.2016.03.053</a>}, journal={Thin Solid Films}, author={Mirhosseini, Hossein and Kiss, Janos and Roma, Guido and Felser, Claudia}, year={2016}, pages={143–147} }","ieee":"H. Mirhosseini, J. Kiss, G. Roma, and C. Felser, “Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations,” <i>Thin Solid Films</i>, pp. 143–147, 2016.","chicago":"Mirhosseini, Hossein, Janos Kiss, Guido Roma, and Claudia Felser. “Reducing the Schottky Barrier Height at the MoSe2/Mo(110) Interface in Thin-Film Solar Cells: Insights from First-Principles Calculations.” <i>Thin Solid Films</i>, 2016, 143–47. <a href=\"https://doi.org/10.1016/j.tsf.2016.03.053\">https://doi.org/10.1016/j.tsf.2016.03.053</a>.","mla":"Mirhosseini, Hossein, et al. “Reducing the Schottky Barrier Height at the MoSe2/Mo(110) Interface in Thin-Film Solar Cells: Insights from First-Principles Calculations.” <i>Thin Solid Films</i>, 2016, pp. 143–47, doi:<a href=\"https://doi.org/10.1016/j.tsf.2016.03.053\">10.1016/j.tsf.2016.03.053</a>.","apa":"Mirhosseini, H., Kiss, J., Roma, G., &#38; Felser, C. (2016). Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations. <i>Thin Solid Films</i>, 143–147. <a href=\"https://doi.org/10.1016/j.tsf.2016.03.053\">https://doi.org/10.1016/j.tsf.2016.03.053</a>","ama":"Mirhosseini H, Kiss J, Roma G, Felser C. Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations. <i>Thin Solid Films</i>. 2016:143-147. doi:<a href=\"https://doi.org/10.1016/j.tsf.2016.03.053\">10.1016/j.tsf.2016.03.053</a>"},"year":"2016","language":[{"iso":"eng"}],"status":"public","doi":"10.1016/j.tsf.2016.03.053","_id":"15732","author":[{"id":"71051","first_name":"Hossein","full_name":"Mirhosseini, Hossein","orcid":"https://orcid.org/0000-0001-6179-1545","last_name":"Mirhosseini"},{"first_name":"Janos","last_name":"Kiss","full_name":"Kiss, Janos"},{"full_name":"Roma, Guido","last_name":"Roma","first_name":"Guido"},{"last_name":"Felser","full_name":"Felser, Claudia","first_name":"Claudia"}],"title":"Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations","type":"journal_article","publication":"Thin Solid Films","date_created":"2020-01-30T13:09:43Z","user_id":"71051"}