{"citation":{"bibtex":"@article{Hedström_Schindlmayr_Schwarz_Scheffler_2006, title={Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110)}, volume={97}, DOI={<a href=\"https://doi.org/10.1103/PhysRevLett.97.226401\">10.1103/PhysRevLett.97.226401</a>}, number={22226401}, journal={Physical Review Letters}, publisher={American Physical Society}, author={Hedström, Magnus and Schindlmayr, Arno and Schwarz, Günther and Scheffler, Matthias}, year={2006} }","ama":"Hedström M, Schindlmayr A, Schwarz G, Scheffler M. Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110). <i>Physical Review Letters</i>. 2006;97(22). doi:<a href=\"https://doi.org/10.1103/PhysRevLett.97.226401\">10.1103/PhysRevLett.97.226401</a>","ieee":"M. Hedström, A. Schindlmayr, G. Schwarz, and M. Scheffler, “Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110),” <i>Physical Review Letters</i>, vol. 97, no. 22, Art. no. 226401, 2006, doi: <a href=\"https://doi.org/10.1103/PhysRevLett.97.226401\">10.1103/PhysRevLett.97.226401</a>.","chicago":"Hedström, Magnus, Arno Schindlmayr, Günther Schwarz, and Matthias Scheffler. “Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110).” <i>Physical Review Letters</i> 97, no. 22 (2006). <a href=\"https://doi.org/10.1103/PhysRevLett.97.226401\">https://doi.org/10.1103/PhysRevLett.97.226401</a>.","mla":"Hedström, Magnus, et al. “Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110).” <i>Physical Review Letters</i>, vol. 97, no. 22, 226401, American Physical Society, 2006, doi:<a href=\"https://doi.org/10.1103/PhysRevLett.97.226401\">10.1103/PhysRevLett.97.226401</a>.","short":"M. Hedström, A. Schindlmayr, G. Schwarz, M. Scheffler, Physical Review Letters 97 (2006).","apa":"Hedström, M., Schindlmayr, A., Schwarz, G., &#38; Scheffler, M. (2006). Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110). <i>Physical Review Letters</i>, <i>97</i>(22), Article 226401. <a href=\"https://doi.org/10.1103/PhysRevLett.97.226401\">https://doi.org/10.1103/PhysRevLett.97.226401</a>"},"isi":"1","volume":97,"author":[{"first_name":"Magnus","full_name":"Hedström, Magnus","last_name":"Hedström"},{"first_name":"Arno","last_name":"Schindlmayr","id":"458","full_name":"Schindlmayr, Arno","orcid":"0000-0002-4855-071X"},{"first_name":"Günther","full_name":"Schwarz, Günther","last_name":"Schwarz"},{"first_name":"Matthias","full_name":"Scheffler, Matthias","last_name":"Scheffler"}],"pmid":"1","publication":"Physical Review Letters","article_type":"original","date_updated":"2022-11-11T06:49:23Z","has_accepted_license":"1","external_id":{"isi":["000242538700040"],"arxiv":["cond-mat/0611639"],"pmid":["17155819"]},"file":[{"title":"Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110)","content_type":"application/pdf","description":"Creative Commons Attribution 3.0 Unported Public License (CC BY 3.0)","relation":"main_file","file_name":"PhysRevLett.97.226401.pdf","date_updated":"2020-08-30T15:54:01Z","file_id":"18598","access_level":"open_access","file_size":122754,"creator":"schindlm","date_created":"2020-08-28T18:04:00Z"}],"user_id":"458","date_created":"2020-08-28T18:02:16Z","language":[{"iso":"eng"}],"article_number":"226401","quality_controlled":"1","status":"public","title":"Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110)","publication_identifier":{"eissn":["1079-7114"],"issn":["0031-9007"]},"abstract":[{"text":"We propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at the (110) surfaces of III–V semiconductors. We find the (+/0) charge-transition level to be 0.49 eV above the surface valence-band maximum for GaAs(110) and 0.82 eV for InP(110). The results show a clear improvement over the local-density approximation and agree closely with an experimental analysis.","lang":"eng"}],"file_date_updated":"2020-08-30T15:54:01Z","publisher":"American Physical Society","publication_status":"published","extern":"1","oa":"1","issue":"22","year":"2006","type":"journal_article","_id":"18597","ddc":["530"],"intvolume":"        97","doi":"10.1103/PhysRevLett.97.226401"}