article published yes Sebastian F. Feste author Thomas Schäpers author Dan Buca author Qing Tai Zhao author Joachim Knoch author Mohammed Bouhassoune author Arno Schindlmayr author 4580000-0002-4855-071X Siegfried Mantl author 296 department 170 department 230 department We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov–de Haas oscillations in the temperature range of T=0.4–4 K for magnetic fields of B=0–10 T were measured. The effective electron mass in SSOI and SOI samples was determined as mt=(0.20±0.01)m0. This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain. https://ris.uni-paderborn.de/download/18632/18633/1.3254330.pdf application/pdfno American Institute of Physics2009 eng 0003-6951 1077-3118 00027166680003410.1063/1.3254330 9518 Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass in biaxial tensile strained silicon on insulator. <i>Applied Physics Letters</i>. 2009;95(18). doi:<a href="https://doi.org/10.1063/1.3254330">10.1063/1.3254330</a> S. F. Feste <i>et al.</i>, “Measurement of effective electron mass in biaxial tensile strained silicon on insulator,” <i>Applied Physics Letters</i>, vol. 95, no. 18, Art. no. 182101, 2009, doi: <a href="https://doi.org/10.1063/1.3254330">10.1063/1.3254330</a>. Feste, Sebastian F., Thomas Schäpers, Dan Buca, Qing Tai Zhao, Joachim Knoch, Mohammed Bouhassoune, Arno Schindlmayr, and Siegfried Mantl. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” <i>Applied Physics Letters</i> 95, no. 18 (2009). <a href="https://doi.org/10.1063/1.3254330">https://doi.org/10.1063/1.3254330</a>. S.F. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr, S. Mantl, Applied Physics Letters 95 (2009). @article{Feste_Schäpers_Buca_Zhao_Knoch_Bouhassoune_Schindlmayr_Mantl_2009, title={Measurement of effective electron mass in biaxial tensile strained silicon on insulator}, volume={95}, DOI={<a href="https://doi.org/10.1063/1.3254330">10.1063/1.3254330</a>}, number={18182101}, journal={Applied Physics Letters}, publisher={American Institute of Physics}, author={Feste, Sebastian F. and Schäpers, Thomas and Buca, Dan and Zhao, Qing Tai and Knoch, Joachim and Bouhassoune, Mohammed and Schindlmayr, Arno and Mantl, Siegfried}, year={2009} } Feste, Sebastian F., et al. “Measurement of Effective Electron Mass in Biaxial Tensile Strained Silicon on Insulator.” <i>Applied Physics Letters</i>, vol. 95, no. 18, 182101, American Institute of Physics, 2009, doi:<a href="https://doi.org/10.1063/1.3254330">10.1063/1.3254330</a>. Feste, S. F., Schäpers, T., Buca, D., Zhao, Q. T., Knoch, J., Bouhassoune, M., Schindlmayr, A., &#38; Mantl, S. (2009). Measurement of effective electron mass in biaxial tensile strained silicon on insulator. <i>Applied Physics Letters</i>, <i>95</i>(18), Article 182101. <a href="https://doi.org/10.1063/1.3254330">https://doi.org/10.1063/1.3254330</a> 186322020-08-28T22:24:30Z2025-12-16T08:10:54Z