[{"department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2021-04-26T06:55:54Z","citation":{"ama":"Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. <i>Semiconductor Science and Technology</i>. 2020. doi:<a href=\"https://doi.org/10.1088/1361-6641/ab89e1\">10.1088/1361-6641/ab89e1</a>","bibtex":"@article{Schuster_Kim_Batke_Reuter_Wieck_2020, title={Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields}, DOI={<a href=\"https://doi.org/10.1088/1361-6641/ab89e1\">10.1088/1361-6641/ab89e1</a>}, number={085011}, journal={Semiconductor Science and Technology}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2020} }","mla":"Schuster, J., et al. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.” <i>Semiconductor Science and Technology</i>, 085011, 2020, doi:<a href=\"https://doi.org/10.1088/1361-6641/ab89e1\">10.1088/1361-6641/ab89e1</a>.","short":"J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020).","chicago":"Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.” <i>Semiconductor Science and Technology</i>, 2020. <a href=\"https://doi.org/10.1088/1361-6641/ab89e1\">https://doi.org/10.1088/1361-6641/ab89e1</a>.","apa":"Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &#38; Wieck, A. D. (2020). Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. <i>Semiconductor Science and Technology</i>. <a href=\"https://doi.org/10.1088/1361-6641/ab89e1\">https://doi.org/10.1088/1361-6641/ab89e1</a>","ieee":"J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,” <i>Semiconductor Science and Technology</i>, 2020."},"publication":"Semiconductor Science and Technology","user_id":"42514","doi":"10.1088/1361-6641/ab89e1","language":[{"iso":"eng"}],"_id":"21796","article_number":"085011","publication_status":"published","date_updated":"2022-01-06T06:55:13Z","publication_identifier":{"issn":["0268-1242","1361-6641"]},"author":[{"last_name":"Schuster","first_name":"J","full_name":"Schuster, J"},{"first_name":"T Y","last_name":"Kim","full_name":"Kim, T Y"},{"full_name":"Batke, E","last_name":"Batke","first_name":"E"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"first_name":"A D","last_name":"Wieck","full_name":"Wieck, A D"}],"title":"Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields","year":"2020","status":"public"}]