---
_id: '21796'
article_number: '085011'
author:
- first_name: J
  full_name: Schuster, J
  last_name: Schuster
- first_name: T Y
  full_name: Kim, T Y
  last_name: Kim
- first_name: E
  full_name: Batke, E
  last_name: Batke
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound
    hole photoluminescence in GaAs in perpendicular magnetic fields. <i>Semiconductor
    Science and Technology</i>. 2020. doi:<a href="https://doi.org/10.1088/1361-6641/ab89e1">10.1088/1361-6641/ab89e1</a>
  apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &#38; Wieck, A. D. (2020).
    Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular
    magnetic fields. <i>Semiconductor Science and Technology</i>. <a href="https://doi.org/10.1088/1361-6641/ab89e1">https://doi.org/10.1088/1361-6641/ab89e1</a>
  bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2020, title={Two-dimensional electron
    bound hole photoluminescence in GaAs in perpendicular magnetic fields}, DOI={<a
    href="https://doi.org/10.1088/1361-6641/ab89e1">10.1088/1361-6641/ab89e1</a>},
    number={085011}, journal={Semiconductor Science and Technology}, author={Schuster,
    J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2020} }'
  chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Two-Dimensional
    Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.”
    <i>Semiconductor Science and Technology</i>, 2020. <a href="https://doi.org/10.1088/1361-6641/ab89e1">https://doi.org/10.1088/1361-6641/ab89e1</a>.
  ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional
    electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,”
    <i>Semiconductor Science and Technology</i>, 2020.
  mla: Schuster, J., et al. “Two-Dimensional Electron Bound Hole Photoluminescence
    in GaAs in Perpendicular Magnetic Fields.” <i>Semiconductor Science and Technology</i>,
    085011, 2020, doi:<a href="https://doi.org/10.1088/1361-6641/ab89e1">10.1088/1361-6641/ab89e1</a>.
  short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science
    and Technology (2020).
date_created: 2021-04-26T06:55:54Z
date_updated: 2022-01-06T06:55:13Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1361-6641/ab89e1
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular
  magnetic fields
type: journal_article
user_id: '42514'
year: '2020'
...