{"date_updated":"2023-04-24T06:00:23Z","type":"journal_article","publication":"Applied Physics Letters","language":[{"iso":"eng"}],"user_id":"49063","citation":{"apa":"Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader, J., &#38; Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. <i>Applied Physics Letters</i>, <i>87</i>(26), Article 261109. <a href=\"https://doi.org/10.1063/1.2149371\">https://doi.org/10.1063/1.2149371</a>","short":"C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, Applied Physics Letters 87 (2005).","chicago":"Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” <i>Applied Physics Letters</i> 87, no. 26 (2005). <a href=\"https://doi.org/10.1063/1.2149371\">https://doi.org/10.1063/1.2149371</a>.","ieee":"C. Schlichenmaier <i>et al.</i>, “Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range,” <i>Applied Physics Letters</i>, vol. 87, no. 26, Art. no. 261109, 2005, doi: <a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>.","mla":"Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” <i>Applied Physics Letters</i>, vol. 87, no. 26, 261109, 2005, doi:<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>.","bibtex":"@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005, title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>}, number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader, J. and Moloney, J. V.}, year={2005} }","ama":"Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. <i>Applied Physics Letters</i>. 2005;87(26). doi:<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>"},"volume":87,"_id":"23507","title":"Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"author":[{"full_name":"Schlichenmaier, C.","last_name":"Schlichenmaier","first_name":"C."},{"full_name":"Thränhardt, A.","last_name":"Thränhardt","first_name":"A."},{"first_name":"Torsten","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","last_name":"Meier","id":"344"},{"first_name":"S. W.","full_name":"Koch, S. W.","last_name":"Koch"},{"first_name":"W. W.","full_name":"Chow, W. W.","last_name":"Chow"},{"last_name":"Hader","full_name":"Hader, J.","first_name":"J."},{"last_name":"Moloney","full_name":"Moloney, J. V.","first_name":"J. V."}],"extern":"1","year":"2005","status":"public","intvolume":"        87","article_number":"261109","doi":"10.1063/1.2149371","publication_status":"published","issue":"26","date_created":"2021-08-24T09:29:41Z","abstract":[{"text":"A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000cm−1\r\n⁠.","lang":"eng"}]}