{"author":[{"first_name":"Baolin","full_name":"Zhao, Baolin","last_name":"Zhao"},{"first_name":"Bastian","last_name":"Gothe","full_name":"Gothe, Bastian"},{"last_name":"Groh","full_name":"Groh, Arthur","first_name":"Arthur"},{"full_name":"Schmaltz, Thomas","last_name":"Schmaltz","first_name":"Thomas"},{"first_name":"Johannes","last_name":"Will","full_name":"Will, Johannes"},{"first_name":"Hans-Georg","id":"84268","orcid":"0000-0001-6373-0877","full_name":"Steinrück, Hans-Georg","last_name":"Steinrück"},{"first_name":"Tobias","full_name":"Unruh, Tobias","last_name":"Unruh"},{"last_name":"Mecking","full_name":"Mecking, Stefan","first_name":"Stefan"},{"first_name":"Marcus","full_name":"Halik, Marcus","last_name":"Halik"}],"status":"public","date_updated":"2022-01-06T06:55:57Z","publication_status":"published","year":"2021","intvolume":" 13","_id":"23613","publication_identifier":{"issn":["1944-8244","1944-8252"]},"language":[{"iso":"eng"}],"page":"32461-32466","type":"journal_article","date_created":"2021-09-01T09:09:36Z","title":"Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors","publication":"ACS Applied Materials & Interfaces","department":[{"_id":"633"}],"user_id":"84268","citation":{"short":"B. Zhao, B. Gothe, A. Groh, T. Schmaltz, J. Will, H.-G. Steinrück, T. Unruh, S. Mecking, M. Halik, ACS Applied Materials & Interfaces 13 (2021) 32461–32466.","bibtex":"@article{Zhao_Gothe_Groh_Schmaltz_Will_Steinrück_Unruh_Mecking_Halik_2021, title={Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors}, volume={13}, DOI={10.1021/acsami.1c05764}, journal={ACS Applied Materials & Interfaces}, author={Zhao, Baolin and Gothe, Bastian and Groh, Arthur and Schmaltz, Thomas and Will, Johannes and Steinrück, Hans-Georg and Unruh, Tobias and Mecking, Stefan and Halik, Marcus}, year={2021}, pages={32461–32466} }","chicago":"Zhao, Baolin, Bastian Gothe, Arthur Groh, Thomas Schmaltz, Johannes Will, Hans-Georg Steinrück, Tobias Unruh, Stefan Mecking, and Marcus Halik. “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors.” ACS Applied Materials & Interfaces 13 (2021): 32461–66. https://doi.org/10.1021/acsami.1c05764.","ama":"Zhao B, Gothe B, Groh A, et al. Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces. 2021;13:32461-32466. doi:10.1021/acsami.1c05764","mla":"Zhao, Baolin, et al. “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors.” ACS Applied Materials & Interfaces, vol. 13, 2021, pp. 32461–66, doi:10.1021/acsami.1c05764.","ieee":"B. Zhao et al., “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors,” ACS Applied Materials & Interfaces, vol. 13, pp. 32461–32466, 2021, doi: 10.1021/acsami.1c05764.","apa":"Zhao, B., Gothe, B., Groh, A., Schmaltz, T., Will, J., Steinrück, H.-G., Unruh, T., Mecking, S., & Halik, M. (2021). Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces, 13, 32461–32466. https://doi.org/10.1021/acsami.1c05764"},"volume":13,"doi":"10.1021/acsami.1c05764"}